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Chen H, Liu L, Zhou X, Meng Z, Wang X, Duan Z, Zhao G, Yan H, Qin P, Liu Z. Emerging Antiferromagnets for Spintronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310379. [PMID: 38183310 DOI: 10.1002/adma.202310379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2023] [Revised: 12/18/2023] [Indexed: 01/08/2024]
Abstract
Antiferromagnets constitute promising contender materials for next-generation spintronic devices with superior stability, scalability, and dynamics. Nevertheless, the perception of well-established ferromagnetic spintronics underpinned by spontaneous magnetization seemed to indicate the inadequacy of antiferromagnets for spintronics-their compensated magnetization has been perceived to result in uncontrollable antiferromagnetic order and subtle magnetoelectronic responses. However, remarkable advancements have been achieved in antiferromagnetic spintronics in recent years, with consecutive unanticipated discoveries substantiating the feasibility of antiferromagnet-centered spintronic devices. It is emphasized that, distinct from ferromagnets, the richness in complex antiferromagnetic crystal structures is the unique and essential virtue of antiferromagnets that can open up their endless possibilities of novel phenomena and functionality for spintronics. In this Perspective, the recent progress in antiferromagnetic spintronics is reviewed, with a particular focus on that based on several kinds of antiferromagnets with special antiferromagnetic crystal structures. The latest developments in efficiently manipulating antiferromagnetic order, exploring novel antiferromagnetic physical responses, and demonstrating prototype antiferromagnetic spintronic devices are discussed. An outlook on future research directions is also provided. It is hoped that this Perspective can serve as guidance for readers who are interested in this field and encourage unprecedented studies on antiferromagnetic spintronic materials, phenomena, and devices.
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Affiliation(s)
- Hongyu Chen
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Li Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Xiaorong Zhou
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Ziang Meng
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Xiaoning Wang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhiyuan Duan
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Guojian Zhao
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Han Yan
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Peixin Qin
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhiqi Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
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Zhou Y, Guo T, Han L, Liao L, He W, Wan C, Chen C, Wang Q, Qiao L, Bai H, Zhu W, Zhang Y, Chen R, Han X, Pan F, Song C. Spin-torque-driven antiferromagnetic resonance. SCIENCE ADVANCES 2024; 10:eadk7935. [PMID: 38215195 PMCID: PMC10786412 DOI: 10.1126/sciadv.adk7935] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Accepted: 12/14/2023] [Indexed: 01/14/2024]
Abstract
The intrinsic fast dynamics make antiferromagnetic spintronics a promising avenue for faster data processing. Ultrafast antiferromagnetic resonance-generated spin current provides valuable access to antiferromagnetic spin dynamics. However, the inverse effect, spin-torque-driven antiferromagnetic resonance (ST-AFMR), which is attractive for practical utilization of fast devices but seriously impeded by difficulties in controlling and detecting Néel vectors, remains elusive. We observe ST-AFMR in Y3Fe5O12/α-Fe2O3/Pt at room temperature. The Néel vector oscillates and contributes to voltage signal owing to antiferromagnetic negative spin Hall magnetoresistance-induced spin rectification effect, which has the opposite sign to ferromagnets. The Néel vector in antiferromagnetic α-Fe2O3 is strongly coupled to the magnetization in Y3Fe5O12 buffer, resulting in the convenient control of Néel vectors. ST-AFMR experiment is bolstered by micromagnetic simulations, where both the Néel vector and the canted moment of α-Fe2O3 are in elliptic resonance. These findings shed light on the spin current-induced dynamics in antiferromagnets and represent a step toward electrically controlled antiferromagnetic terahertz emitters.
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Affiliation(s)
- Yongjian Zhou
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Tingwen Guo
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
- LSI, CEA/DRF/IRAMIS, CNRS, Ecole Polytechnique, Institut Polytechnique de Paris, F-91128 Palaiseau, France
| | - Lei Han
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Liyang Liao
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Wenqing He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Caihua Wan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Chong Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Qian Wang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Leilei Qiao
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Hua Bai
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Wenxuan Zhu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Yichi Zhang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Ruyi Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
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