"Absolute" deformation potentials: Formulation and ab initio calculations for semiconductors

The prediction of two-dimensional PbN: opened bandgap in heterostructure with CdO

The development of two-dimensional (2D) materials has received wide attention as a generation of optoelectronics, thermoelectric, and other applications. In this study, a novel 2D material, PbN, is proposed as an elemental method using the prototype of a recent reported nitride (J. Phys. Chem. C 2023, 127, 43, 21,006-21014). Based on first-principle calculations, the PbN monolayer is investigated as stable at 900 K, and the isotropic mechanical behavior is addressed by the Young's modulus and Poisson's ratio at 67.4 N m-1 and 0.15, respectively. The PbN monolayer also presents excellent catalytic performance with Gibbs free energy of 0.41 eV. Zero bandgap is found for the PbN monolayer, and it can be opened at about 0.128 eV by forming a heterostructure with CdO. Furthermore, the PbN/CdO is constructed by Van der Waals interaction, while the apparent potential drop and charge transfer are investigated at the interface. The PbN/CdO heterostructure also possesses excellent light absorption properties. The results provide theoretical guidance for the design of layered functional materials.

Elucidating Piezoelectricity and Strain in Monolayer MoS2 at the Nanoscale Using Kelvin Probe Force Microscopy

Strain engineering modifies the optical and electronic properties of atomically thin transition metal dichalcogenides. Highly inhomogeneous strain distributions in two-dimensional materials can be easily realized, enabling control of properties on the nanoscale; however, methods for probing strain on the nanoscale remain challenging. In this work, we characterize inhomogeneously strained monolayer MoS2 via Kelvin probe force microscopy and electrostatic gating, isolating the contributions of strain from other electrostatic effects and enabling the measurement of all components of the two-dimensional strain tensor on length scales less than 100 nm. The combination of these methods is used to calculate the spatial distribution of the electrostatic potential resulting from piezoelectricity, presenting a powerful way to characterize inhomogeneous strain and piezoelectricity that can be extended toward a variety of 2D materials.

Room-temperature wavelike exciton transport in a van der Waals superatomic semiconductor

The transport of energy and information in semiconductors is limited by scattering between electronic carriers and lattice phonons, resulting in diffusive and lossy transport that curtails all semiconductor technologies. Using Re6Se8Cl2, a van der Waals (vdW) superatomic semiconductor, we demonstrate the formation of acoustic exciton-polarons, an electronic quasiparticle shielded from phonon scattering. We directly imaged polaron transport in Re6Se8Cl2 at room temperature, revealing quasi-ballistic, wavelike propagation sustained for a nanosecond and several micrometers. Shielded polaron transport leads to electronic energy propagation lengths orders of magnitude greater than in other vdW semiconductors, exceeding even silicon over a nanosecond. We propose that, counterintuitively, quasi-flat electronic bands and strong exciton-acoustic phonon coupling are together responsible for the transport properties of Re6Se8Cl2, establishing a path to ballistic room-temperature semiconductors.

Tuning Electrical and Mechanical Properties of Metal-Organic Frameworks by Metal Substitution

Metal-organic frameworks (MOFs), synthesized by the self-assembly of organic ligands and metal centers, are structurally designable materials. In the current study, first-principles calculation based on density functional theory (DFT) was performed to investigate the intrinsic mechanical and electrical properties and mechanical-electrical coupling behavior of MOF-5. To improve the conductivity of MOF-5, homologous elements of Cu, Ag, and Au were adopted to replace the Zn atom in MOF-5, reducing the band gap and improving its electrical performance. Cu-MOF-5 and Au-MOF-5, with stable structures, exhibit better conductivity. The intrinsic mechanical properties such as independent elastic constants of MOF-5 and M-MOF-5 (M = Cu, Ag, Au) were obtained. MOF-5 and Cu-MOF-5 were experimentally synthesized to demonstrate the reduction in the band gap after metal substitution. The study of the strain effect of MOF-5 and Cu-MOF-5 proves that strain engineering is an effective method to regulate the band gap and this modulation is repeatable. This study clarifies the tunability of the band gap of MOF-5 with metal substituents and provides an efficient strategy for the development of new types of MOFs with desired physical properties using the combination of theoretical prediction and experimental synthesis and validation.

Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n-Type Doping, and Field-Effect Transistor Using CaSnO3

The alkaline earth stannates are touted for their wide band gaps and the highest room-temperature electron mobilities among all of the perovskite oxides. CaSnO3 has the highest measured band gap in this family and is thus a particularly promising ultrawide band gap semiconductor. However, discouraging results from previous theoretical studies and failed doping attempts had described this material as "undopable". Here we redeem CaSnO3 using hybrid molecular beam epitaxy, which provides an adsorption-controlled growth for the phase-pure, epitaxial, and stoichiometric CaSnO3 films. By introducing lanthanum (La) as an n-type dopant, we demonstrate the robust and predictable doping of CaSnO3 with free electron concentrations, n3D, from 3.3 × 1019 cm-3 to 1.6 × 1020 cm-3. The films exhibit a maximum room-temperature mobility of 42 cm2 V-1 s-1 at n3D = 3.3 × 1019 cm-3. Despite having a comparable radius as the host ion, La expands the lattice parameter. Using density functional calculations, this effect is attributed to the energy gain by lowering the conduction band upon volume expansion. Finally, we exploit robust doping by fabricating CaSnO3-based field-effect transistors. The transistors show promise for CaSnO3's high-voltage capabilities by exhibiting low off-state leakage below 2 × 10-5 mA/mm at a drain-source voltage of 100 V and on-off ratios exceeding 106. This work serves as a starting point for future studies on the semiconducting properties of CaSnO3 and many devices that could benefit from CaSnO3's exceptionally wide band gap.

Ultrahigh Carrier Mobility in Two-Dimensional IV-VI Semiconductors for Photocatalytic Water Splitting

Two-dimensional materials have been developed as novel photovoltaic and photocatalytic devices because of their excellent properties. In this work, four δ-IV-VI monolayers, GeS, GeSe, SiS and SiSe, are investigated as semiconductors with desirable bandgaps using the first-principles method. These δ-IV-VI monolayers exhibit exceptional toughness; in particular, the yield strength of the GeSe monolayer has no obvious deterioration at 30% strain. Interestingly, the GeSe monolayer also possesses ultrahigh electron mobility along the x direction of approximately 32,507 cm²·V^-1·s^-1, which is much higher than that of the other δ-IV-VI monolayers. Moreover, the calculated capacity for hydrogen evolution reaction of these δ-IV-VI monolayers further implies their potential for applications in photovoltaic and nano-devices.

In-gap states and strain-tuned band convergence in layered structure trivalent iridate K0.75Na0.25IrO2

Iridium oxides (iridates) provide a good platform to study the delicate interplay between spin-orbit coupling (SOC) interactions, electron correlation effects, Hund's coupling and lattice degrees of freedom. An overwhelming number of investigations primarily focus on tetravalent (Ir⁴⁺, 5d⁵) and pentavalent (Ir⁵⁺, 5d⁴) iridates, and far less attention has been paid to iridates with other valence states. Here, we pay our attention to a less-explored trivalent (Ir³⁺, 5d⁶) iridate, K_0.75Na_0.25IrO₂, crystallizing in a triangular lattice with edge-sharing IrO₆ octahedra and alkali metal ion intercalated [IrO₂]^- layers, offering a good platform to explore the interplay between different degrees of freedom. We theoretically determine the preferred occupied positions of the alkali metal ions from energetic viewpoints and reproduce the experimentally observed semiconducting behavior and nonmagnetic (NM) properties of K_0.75Na_0.25IrO₂. The SOC interactions play a critical role in the band dispersion, resulting in NM J_eff = 0 states. More intriguingly, our electronic structure not only uncovers the presence of intrinsic in-gap states and nearly free electron character for the conduction band minimum, but also explains the abnormally low activation energy in K_0.75Na_0.25IrO₂. Particularly, the band edge can be effectively modulated by mechanical strain, and the in-gap states feature enhanced band-convergence characteristics by 6% compressive strain, which will greatly enhance the electrical conductivity of K_0.75Na_0.25IrO₂. The present work sheds new light on the unconventional electronic structures of trivalent iridates, indicating their promising application as a nanoelectronic and thermoelectric material, which will attract extensive interest and stimulate experimental works to further understand the unprecedented electronic structures and exploit potential applications of the triangular trivalent iridate.

Two-dimensional MX2Y4 systems: ultrahigh carrier transport and excellent hydrogen evolution reaction performances

Very recently, two-dimensional MoSi₂N₄ has been synthetized (Y.-L. Hong, Z. Liu, L. Wang, T. Zhou, W. Ma, C. Xu, S. Feng, L. Chen, M.-L. Chen and D.-M. Sun, Chemical vapor deposition of layered two-dimensional MoSi₂N₄ materials, Science, 2020, 369, 670-674.). In this work, we systematically explore the mechanical, electronic, and catalytic properties of the MX₂Y₄ (M = Cr, Hf, Mo, Ti, W, Zr; X = Si, Ge; Y = N, P, As) monolayers by first-principles calculations. These observed monolayers exhibit an isotropic Young's moduli of 165-514 N m^-1 and a Poisson's ratio of 0.26-0.33. The calculated band structures indicate that their bandgaps are in the range of 0.49-2.05 eV at the HSE06 level. In particular, a high electron mobility of about 1.04 × 10⁴ cm² V^-1 s^-1 is observed in TiSi₂N₄ monolayers, which shows potential for high-speed electronic devices. MX₂Y₄ monolayers also reveal decent performances in the hydrogen evolution reaction. More importantly, the Gibbs free energy change of the TiSi₂N₄ (ZrSi₂N₄) monolayer is as small as 0.078 eV (-0.035 eV), even being comparable with that of Pt (-0.09 eV). This investigation suggests that the MoSi₂N₄ family monolayers have potential advanced applications such as photocatalytic, electrocatalytic, and photovoltaic devices.

Mechanical, electronic and optical properties of a novel B2P6 monolayer: ultrahigh carrier mobility and strong optical absorption

Two-dimensional (2D) materials with a moderate bandgap and high carrier mobility are useful for applications in optoelectronics. In this work, we present a systematic investigation of the mechanical, electronic and optical properties of a B₂P₆ monolayer using first-principles calculations. Monolayer B₂P₆ was estimated to be an anisotropic material from direction-dependent in-plane Young's moduli and Poisson's ratios. Also, B₂P₆ exhibits an ultrahigh electron mobility of ∼5888 cm² V^-1 s^-1, showing advantages for application in high-speed optoelectronic devices. More importantly, for the B₂P₆ monolayer, a desirable transformation from an indirect to direct band gap was observed at a biaxial tensile strain of ∼4%. Increasing the biaxial strain reduces the gap and preserves the suitable band edge positions for photocatalytic water splitting in the observed strain range of 1-8%. The decreased gap also enhances the visible light absorption of the B₂P₆ monolayer. These findings indicate that the B₂P₆ monolayer has promising applications in photocatalytic and photovoltaic devices.

Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors

The electronic and optical properties of (In_xGa_1-x)₂O₃ alloys are highly tunable, giving rise to a myriad of applications including transparent conductors, transparent electronics, and solar-blind ultraviolet photodetectors. Here, we investigate these properties for a high quality pulsed laser deposited film which possesses a lateral cation composition gradient (0.01 ≤ x ≤ 0.82) and three crystallographic phases (monoclinic, hexagonal, and bixbyite). The optical gaps over this composition range are determined, and only a weak optical gap bowing is found (b = 0.36 eV). The valence band edge evolution along with the change in the fundamental band gap over the composition gradient enables the surface space-charge properties to be probed. This is an important property when considering metal contact formation and heterojunctions for devices. A transition from surface electron accumulation to depletion occurs at x ∼ 0.35 as the film goes from the bixbyite In₂O₃ phase to the monoclinic β-Ga₂O₃ phase. The electronic structure of the different phases is investigated by using density functional theory calculations and compared to the valence band X-ray photoemission spectra. Finally, the properties of these alloys, such as the n-type dopability of In₂O₃ and use of Ga₂O₃ as a solar-blind UV detector, are understood with respect to other common-cation compound semiconductors in terms of simple chemical trends of the band edge positions and the hydrostatic volume deformation potential.

Band Alignment and the Built-in Potential of Solids

The built-in potential is of central importance to the understanding of many interfacial phenomena because it determines the band alignment at the interface. Despite its importance, its exact sign and magnitude have generally been recognized as ill-defined quantities for more than half a century. Here, we provide a common energy reference of bulk matter which leads to an unambiguous definition of the built-in potential and innate (i.e., bulk) band alignment. Further, we find that the built-in potential is explicitly determined by the bulk properties of the constituent materials when the system is in electronic equilibrium, while the interface plays a role only in the absence of equilibrium. Our quantitative theory enables a unified description of a variety of important properties of interfaces, ranging from work functions to Schottky barriers in electronic devices.

Hot electron relaxation dynamics in semiconductors: assessing the strength of the electron-phonon coupling from the theoretical and experimental viewpoints

The rapid development of the computational methods based on density functional theory, on the one hand, and of time-, energy-, and momentum-resolved spectroscopy, on the other hand, allows today an unprecedently detailed insight into the processes governing hot-electron relaxation dynamics, and, in particular, into the role of the electron-phonon coupling. Instead of focusing on the development of a particular method, theoretical or experimental, this review aims to treat the progress in the understanding of the electron-phonon coupling which can be gained from both, on the basis of recently obtained results. We start by defining several regimes of hot electron relaxation via electron-phonon coupling, with respect to the electron excitation energy. We distinguish between energy and momentum relaxation of hot electrons, and summarize, for several semiconductors of the IV and III-V groups, the orders of magnitude of different relaxation times in different regimes, on the basis of known experimental and numerical data. Momentum relaxation times of hot electrons become very short around 1 eV above the bottom of the conduction band, and such ultrafast relaxation mechanisms are measurable only in the most recent pump-probe experiments. Then, we give an overview of the recent progress in the experimental techniques allowing to obtain detailed information on the hot-electron relaxation dynamics, with the main focus on time-, energy-, and momentum-resolved photoemission experiments. The particularities of the experimental approach developed by one of us, which allows to capture time-, energy-, and momentum-resolved hot-electron distributions, as well as to measure momentum relaxation times of the order of 10 fs, are discussed. We further discuss the main advances in the calculation of the electron-phonon scattering times from first principles over the past ten years, in semiconducting materials. Ab initio techniques and efficient interpolation methods provide the possibility to calculate electron-phonon scattering times with high precision at reasonable numerical cost. We highlight the methods of analysis of the obtained numerical results, which allow to give insight into the details of the electron-phonon scattering mechanisms. Finally, we discuss the concept of hot electron ensemble which has been proposed recently to describe the hot-electron relaxation dynamics in GaAs, the applicability of this concept to other materials, and its limitations. We also mention some open problems.

Spectroscopic evidence for negative electronic compressibility in a quasi-three-dimensional spin-orbit correlated metal

Negative compressibility is a sign of thermodynamic instability of open or non-equilibrium systems. In quantum materials consisting of multiple mutually coupled subsystems, the compressibility of one subsystem can be negative if it is countered by positive compressibility of the others. Manifestations of this effect have so far been limited to low-dimensional dilute electron systems. Here, we present evidence from angle-resolved photoemission spectroscopy (ARPES) for negative electronic compressibility (NEC) in the quasi-three-dimensional (3D) spin-orbit correlated metal (Sr1-xLax)3Ir2O7. Increased electron filling accompanies an anomalous decrease of the chemical potential, as indicated by the overall movement of the deep valence bands. Such anomaly, suggestive of NEC, is shown to be primarily driven by the lowering in energy of the conduction band as the correlated bandgap reduces. Our finding points to a distinct pathway towards an uncharted territory of NEC featuring bulk correlated metals with unique potential for applications in low-power nanoelectronics and novel metamaterials.

Electronic structures of anatase (TiO2)1−x(TaON)x solid solutions: a first-principles study

Solid solutions (TiO₂)_1−x(TaON)_x (0 ≤ x ≤ 1) within an anatase crystal structure have substantially narrower band gaps than pristine TiO₂. Incorporation of high-concentration N by the strategy of introducing Ta along with N for the sake of carrier compensation is promising to overcome the difficulty in N-doped TiO₂.

Electronic structure modulation of metal-organic frameworks for hybrid devices

The study of metal-organic frameworks has largely been motivated by their structural and chemical diversity; however, these materials also possess rich physics, including optical, electronic, and magnetic activity. If these materials are to be employed in devices, it is necessary to develop an understanding of their solid-state behavior. We report an approach to calculate the effect of strain on the band structure of porous frameworks. The origin of the bidirectional absolute deformation potentials can be described from perturbations of the organic and inorganic building blocks. The unified approach allows us to propose several uses for hybrid materials, beyond their traditionally posited applications, including gas sensing, photoelectrochemistry, and as hybrid transistors.

Envelope function method for electrons in slowly-varying inhomogeneously deformed crystals

We develop a new envelope-function formalism to describe electrons in slowly-varying inhomogeneously strained semiconductor crystals. A coordinate transformation is used to map a deformed crystal back to a geometrically undeformed structure with deformed crystal potential. The single-particle Schrödinger equation is solved in the undeformed coordinates using envelope function expansion, wherein electronic wavefunctions are written in terms of strain-parametrized Bloch functions modulated by slowly varying envelope functions. Adopting a local approximation of the electronic structure, the unknown crystal potential in the Schrödinger equation can be replaced by the strain-parametrized Bloch functions and the associated strain-parametrized energy eigenvalues, which can be constructed from unit-cell level ab initio or semi-empirical calculations of homogeneously deformed crystals at a chosen crystal momentum. The Schrödinger equation is then transformed into a coupled differential equation for the envelope functions and solved as a generalized matrix eigenvector problem. As the envelope functions are slowly varying, a coarse spatial or Fourier grid can be used to represent the envelope functions, enabling the method to treat relatively large systems. We demonstrate the effectiveness of this method using a one-dimensional model, where we show that the method can achieve high accuracy in the calculation of energy eigenstates with relatively low cost compared to direct diagonalization of the Hamiltonian. We further derive envelope function equations that allow the method to be used empirically, in which case certain parameters in the envelope function equations will be fitted to experimental data.

Simultaneous control of ionic and electronic conductivity in materials: thallium bromide case study

Achieving simultaneous control of ionic and electronic conductivity in materials is one of the great challenges in solid state ionics. Since these properties are intertwined, optimizing one often results in degrading the other. In this Letter, we propose a method to limit ionic current without impacting the electronic properties of a general class of materials, based on codoping with oppositely charged ions. We describe a set of analyses, based on parameter-free quantum mechanical simulations, to assess the efficacy of the approach and determine optimal dopants. For illustration, we discuss the case of thallium bromide, a wide band gap ionic crystal whose promise as a room-temperature radiation detector has been hampered by ionic migration. We find that acceptors and donors bind strongly with the charged vacancies that mediate ionic transport, forming neutral complexes that render them immobile. Analysis of carrier recombination and scattering by the complexes allows the identification of specific dopants that do not degrade electronic transport in the crystal.

Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO2(111)

Epitaxial films of In(2)O(3) have been grown on Y-stabilised ZrO(2)(111) substrates by molecular beam epitaxy over a range of thicknesses between 35 and 420 nm. The thinnest films are strained, but display a 'cross-hatch' morphology associated with a network of misfit dislocations which allow partial accommodation of the lattice mismatch. With increasing thickness a 'dewetting' process occurs and the films break up into micron sized mesas, which coalesce into continuous films at the highest coverages. The changes in morphology are accompanied by a progressive release of strain and an increase in carrier mobility to a maximum value of 73 cm(2) V(-1) s(-1). The optical band gap in strained ultrathin films is found to be smaller than for thicker films. Modelling of the system, using a combination of classical pair-wise potentials and ab initio density functional theory, provides a microscopic description of the elastic contributions to the strained epitaxial growth, as well as the electronic effects that give rise to the observed band gap changes. The band gap increase induced by the uniaxial compression is offset by the band gap reduction associated with the epitaxial tensile strain.

Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN

Band gaps and band alignments for AlN, GaN, InN, and InGaN alloys are investigated using density functional theory with the with the Heyd-Scuseria-Ernzerhof {HSE06 [J. Heyd, G. E. Scuseria, and M. Ernzerhof, J. Chem. Phys. 134, 8207 (2003); 124, 219906 (2006)]} XC functional. The band gap of InGaN alloys as a function of In content is calculated and a strong bowing at low In content is found, described by bowing parameters 2.29 eV at 6.25% and 1.79 eV at 12.5%, indicating the band gap cannot be described by a single composition-independent bowing parameter. Valence-band maxima (VBM) and conduction-band minima (CBM) are aligned by combining bulk calculations with surface calculations for nonpolar surfaces. The influence of surface termination [(1100) m-plane or (1120) a-plane] is thoroughly investigated. We find that for the relaxed surfaces of the binary nitrides the difference in electron affinities between m- and a-plane is less than 0.1 eV. The absolute electron affinities are found to strongly depend on the choice of XC functional. However, we find that relative alignments are less sensitive to the choice of XC functional. In particular, we find that relative alignments may be calculated based on Perdew-Becke-Ernzerhof [J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 134, 3865 (1996)] surface calculations with the HSE06 lattice parameters. For InGaN we find that the VBM is a linear function of In content and that the majority of the band-gap bowing is located in the CBM. Based on the calculated electron affinities we predict that InGaN will be suited for water splitting up to 50% In content.

Lone-pair states as a key to understanding impact ionization in chalcogenide semiconductors

Impact ionization of holes and domination of p-conductivity in chalcogenide semiconductors are attributed to a weak electron-phonon interaction inherent to lone-pair states. This argument is supported by first-principles calculations of an acoustical deformation potential in trigonal selenium. Results of the calculations reveal a strong dependence of the deformation potential on the excess energy of charge carriers. The latter is interpreted using a simple tight-binding model.