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Weng G, Romanova M, Apelian A, Song H, Vlček V. Reduced Scaling of Optimal Regional Orbital Localization via Sequential Exhaustion of the Single-Particle Space. J Chem Theory Comput 2022; 18:4960-4972. [PMID: 35817013 PMCID: PMC9367006 DOI: 10.1021/acs.jctc.2c00315] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
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Wannier functions have become a powerful tool in the
electronic
structure calculations of extended systems. The generalized Pipek-Mezey
Wannier functions exhibit appealing characteristics (e.g., reaching
an optimal localization and the separation of the σ–π
orbitals) compared with other schemes. However, when applied to giant
nanoscale systems, the orbital localization suffers from a large computational
cost overhead if one is interested in localized states in a small
fragment of the system. Herein, we present a swift, efficient, and
robust approach for obtaining regionally localized orbitals of a subsystem
within the generalized Pipek-Mezey scheme. The proposed algorithm
introduces a reduced work space and sequentially exhausts the entire
orbital space until the convergence of the localization functional.
It tackles systems with ∼10000 electrons within 0.5 h with
no loss in localization quality compared to the traditional approach.
Regionally localized orbitals with a higher extent of localization
are obtained via judiciously extending the subsystem’s size.
Exemplifying on large bulk and a 4 nm wide slab of diamond with an
NV– center, we demonstrate the methodology and discuss
how the choice of the localization region affects the excitation energy
of the defect. Furthermore, we show how the sequential algorithm is
easily extended to stochastic methodologies that do not provide individual
single-particle eigenstates. It is thus a promising tool to obtain
regionally localized states for solving the electronic structure problems
of a subsystem embedded in giant condensed systems.
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Affiliation(s)
- Guorong Weng
- Department of Chemistry and Biochemistry, University of California, Santa Barbara, California 93106-9510, United States
| | - Mariya Romanova
- Department of Chemistry and Biochemistry, University of California, Santa Barbara, California 93106-9510, United States
| | - Arsineh Apelian
- Department of Materials, University of California, Santa Barbara, California 93106-9510, United States
| | - Hanbin Song
- Department of Chemistry and Biochemistry, University of California, Santa Barbara, California 93106-9510, United States
| | - Vojtěch Vlček
- Department of Chemistry and Biochemistry, University of California, Santa Barbara, California 93106-9510, United States
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2
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Zang H, Sun X, Jiang K, Chen Y, Zhang S, Ben J, Jia Y, Wu T, Shi Z, Li D. Cation Vacancy in Wide Bandgap III-Nitrides as Single-Photon Emitter: A First-Principles Investigation. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2100100. [PMID: 34310869 PMCID: PMC8456231 DOI: 10.1002/advs.202100100] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/12/2021] [Revised: 05/09/2021] [Indexed: 06/13/2023]
Abstract
Single-photon sources based on solid-state material are desirable in quantum technologies. However, suitable platforms for single-photon emission are currently limited. Herein, a theoretical approach to design a single-photon emitter based on defects in solid-state material is proposed. Through group theory analysis and hybrid density functional theory calculation, the charge-neutral cation vacancy in III-V compounds is found to satisfy a unique 5-electron-8-orbital electronic configuration with Td symmetry, which is possible for single-photon emission. Furthermore, it is confirmed that this type of single-photon emitter only exists in wide bandgap III-nitrides among all the III-V compounds. The corresponding photon energy in GaN, AlN, and AlGaN lies within the optimal range for transfer in optical fiber, thereby render the charge-neutral cation vacancy in wide-bandgap III-nitrides as a promising single-photon emitter for quantum information applications.
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Affiliation(s)
- Hang Zang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and PhysicsChinese Academy of SciencesChangchun130033China
| | - Xiaojuan Sun
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and PhysicsChinese Academy of SciencesChangchun130033China
| | - Ke Jiang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and PhysicsChinese Academy of SciencesChangchun130033China
| | - Yang Chen
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and PhysicsChinese Academy of SciencesChangchun130033China
| | - Shanli Zhang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and PhysicsChinese Academy of SciencesChangchun130033China
| | - Jianwei Ben
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and PhysicsChinese Academy of SciencesChangchun130033China
| | - Yuping Jia
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and PhysicsChinese Academy of SciencesChangchun130033China
| | - Tong Wu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and PhysicsChinese Academy of SciencesChangchun130033China
| | - Zhiming Shi
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and PhysicsChinese Academy of SciencesChangchun130033China
| | - Dabing Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and PhysicsChinese Academy of SciencesChangchun130033China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
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3
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Shi Z, Qi Z, Zang H, Jiang K, Chen Y, Jia Y, Wu T, Zhang S, Sun X, Li D. Point Defects in Monolayer h-AlN as Candidates for Single-Photon Emission. ACS APPLIED MATERIALS & INTERFACES 2021; 13:37380-37387. [PMID: 34313423 DOI: 10.1021/acsami.1c09175] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A single-photon emission (SPE) system based on a solid state is one of the fundamental branches in quantum information and communication technologies. The traditional bulk semiconductors suffered limitations of difficult photon extraction and long radiative lifetime. Two-dimensional (2D) semiconductors with an entire open structure and low dielectric screening can overcome these shortcomings. In this work, we focus on monolayer h-AlN due to its wide band gap and the successful achievement of SPE compared to its bulk counterpart. We systematically investigate the properties of point defects, including vacancies, antisites, and impurities, in monolayer h-AlN by employing hybrid density functional theory calculations. The -1 charged Al vacancy (VAl-) and +1 charged nitrogen antisite (NAl+) are predicted to achieve SPE with the zero-phonon lines of 0.77 and 1.40 eV, respectively. Moreover, the charged point-defect complex CAlVN+, which is composed of vacancies and carbon substitutions, also can be used for SPE. Our results extend the avenue for realizing SPE in 2D semiconductors.
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Affiliation(s)
- Zhiming Shi
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Zhanbin Qi
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hang Zang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Ke Jiang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Yang Chen
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Yuping Jia
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Tong Wu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Shanli Zhang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Xiaojuan Sun
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Dabing Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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4
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Sun H, Sang L, Wu H, Zhang Z, Teraji T, Li TF, You JQ, Toda M, Koizumi S, Liao M. Effect of Deep-Defects Excitation on Mechanical Energy Dissipation of Single-Crystal Diamond. PHYSICAL REVIEW LETTERS 2020; 125:206802. [PMID: 33258634 DOI: 10.1103/physrevlett.125.206802] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2020] [Accepted: 10/15/2020] [Indexed: 06/12/2023]
Abstract
The ultrawide band gap of diamond distinguishes it from other semiconductors, in that all known defects have deep energy levels that are less active at room temperature. Here, we present the effect of deep defects on the mechanical energy dissipation of single-crystal diamond experimentally and theoretically up to 973 K. Energy dissipation is found to increase with temperature and exhibits local maxima due to the interaction between phonons and deep defects activated at specific temperatures. A two-level model with deep energies is proposed to explain well the energy dissipation at elevated temperatures. It is evident that the removal of boron impurities can substantially increase the quality factor of room-temperature diamond mechanical resonators. The deep energy nature of the defects bestows single-crystal diamond with outstanding low intrinsic energy dissipation in mechanical resonators at room temperature or above.
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Affiliation(s)
- Huanying Sun
- Quantum Physics and Quantum Information Division, Beijing Computational Science Research Center, Beijing 100193, China
- Research Center for Materials Center, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - Liwen Sang
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - Haihua Wu
- Research Center for Materials Center, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - Zilong Zhang
- Research Center for Materials Center, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - Tokuyuki Teraji
- Research Center for Materials Center, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - Tie-Fu Li
- Institute of Microelectronics and Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - J Q You
- Interdisciplinary Center of Quantum Information and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics and State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China
| | - Masaya Toda
- Graduate School of Engineering, Tohoku University, Sendai, Miyagi 980-8579, Japan
| | - Satoshi Koizumi
- Research Center for Materials Center, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - Meiyong Liao
- Research Center for Materials Center, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
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5
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Wahl U, Correia JG, Villarreal R, Bourgeois E, Gulka M, Nesládek M, Vantomme A, Pereira LMC. Direct Structural Identification and Quantification of the Split-Vacancy Configuration for Implanted Sn in Diamond. PHYSICAL REVIEW LETTERS 2020; 125:045301. [PMID: 32794782 DOI: 10.1103/physrevlett.125.045301] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2019] [Revised: 05/28/2020] [Accepted: 07/01/2020] [Indexed: 06/11/2023]
Abstract
We demonstrate formation of the ideal split-vacancy configuration of the Sn-vacancy center upon implantation into natural diamond. Using β^{-} emission channeling following low fluence ^{121}Sn implantation (2×10^{12} atoms/cm^{2}, 60 keV) at the ISOLDE facility at CERN, we directly identified and quantified the atomic configurations of the Sn-related centers. Our data show that the split-vacancy configuration is formed immediately upon implantation with a surprisingly high efficiency of ≈40%. Upon thermal annealing at 920 °C ≈30% of Sn is found in the ideal bond-center position. Photoluminescence revealed the characteristic SnV^{-} line at 621 nm, with an extraordinarily narrow ensemble linewidth (2.3 nm) of near-perfect Lorentzian shape. These findings further establish the SnV^{-} center as a promising candidate for single photon emission applications, since, in addition to exceptional optical properties, it also shows a remarkably simple structural formation mechanism.
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Affiliation(s)
- U Wahl
- KU Leuven, Quantum Solid-State Physics, 3001 Leuven, Belgium
- Centro de Ciências e Tecnologias Nucleares, Departamento de Engenharia e Ciências Nucleares, Instituto Superior Técnico, Universidade de Lisboa, 2695-066 Bobadela LRS, Portugal
| | - J G Correia
- Centro de Ciências e Tecnologias Nucleares, Departamento de Engenharia e Ciências Nucleares, Instituto Superior Técnico, Universidade de Lisboa, 2695-066 Bobadela LRS, Portugal
| | - R Villarreal
- KU Leuven, Quantum Solid-State Physics, 3001 Leuven, Belgium
| | - E Bourgeois
- Institute for Materials Research (IMO), Hasselt University, 3590 Diepenbeek, Belgium
- IMOMEC division, IMEC, 3590 Diepenbeek, Belgium
| | - M Gulka
- Institute for Materials Research (IMO), Hasselt University, 3590 Diepenbeek, Belgium
| | - M Nesládek
- Institute for Materials Research (IMO), Hasselt University, 3590 Diepenbeek, Belgium
- IMOMEC division, IMEC, 3590 Diepenbeek, Belgium
| | - A Vantomme
- KU Leuven, Quantum Solid-State Physics, 3001 Leuven, Belgium
| | - L M C Pereira
- KU Leuven, Quantum Solid-State Physics, 3001 Leuven, Belgium
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6
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Ondič L, Varga M, Fait J, Hruška K, Jurka V, Kromka A, Maňák J, Kapusta P, Nováková J. Photonic crystal cavity-enhanced emission from silicon vacancy centers in polycrystalline diamond achieved without postfabrication fine-tuning. NANOSCALE 2020; 12:13055-13063. [PMID: 32539056 DOI: 10.1039/c9nr10580h] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Diamond optical centers have recently emerged as promising single-photon sources for quantum photonics. Particularly, negatively charged silicon vacancy (SiV-) centers show great promise due to their narrow zero-phonon emission line present also at room temperature. However, due to fabrication tolerances it is challenging to prepare directly photonic structures with optical modes spectrally matching the emission of SiV- centers. To reach the spectral overlap, photonic structures must typically undergo complicated post-processing treatment. In this work, suspended photonic crystal cavities made of polycrystalline diamond are engineered and more than 2.5-fold enhancement of the SiV- center zero-phonon line intensity via coupling to the cavity photonic mode is demonstrated. The intrinsic non-homogeneous thickness of the diamond thin layer within the sample is taken as an advantage that enables reaching the spectral overlap between the emission from SiV- centers and the cavity modes without any post-processing. Even with lower optical quality compared to monocrystalline diamond, the fabricated photonic structures show comparable efficiency for intensity enhancement. Therefore, the results of this work may open up a promising route for the application of polycrystalline diamond in photonics.
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Affiliation(s)
- Lukáš Ondič
- Institute of Physics, Czech Academy of Sciences, v.v.i., Cukrovarnická 10, CZ-162 00, Prague 6, Czech Republic.
| | - Marian Varga
- Institute of Physics, Czech Academy of Sciences, v.v.i., Cukrovarnická 10, CZ-162 00, Prague 6, Czech Republic.
| | - Jan Fait
- Institute of Physics, Czech Academy of Sciences, v.v.i., Cukrovarnická 10, CZ-162 00, Prague 6, Czech Republic. and Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 27, 16627 Prague, Czech Republic
| | - Karel Hruška
- Institute of Physics, Czech Academy of Sciences, v.v.i., Cukrovarnická 10, CZ-162 00, Prague 6, Czech Republic.
| | - Vlastimil Jurka
- Institute of Physics, Czech Academy of Sciences, v.v.i., Cukrovarnická 10, CZ-162 00, Prague 6, Czech Republic.
| | - Alexander Kromka
- Institute of Physics, Czech Academy of Sciences, v.v.i., Cukrovarnická 10, CZ-162 00, Prague 6, Czech Republic.
| | - Jan Maňák
- Institute of Physics, Czech Academy of Sciences, v.v.i., Cukrovarnická 10, CZ-162 00, Prague 6, Czech Republic.
| | - Peter Kapusta
- J. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, v.v.i., Dolejškova 3, CZ-182 23, Prague 8, Czech Republic
| | - Jaroslava Nováková
- Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 742/2, 180 00 Prague 8, Czech Republic
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7
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Zhou X, Zhang Z, Guo W. Dislocations as Single Photon Sources in Two-Dimensional Semiconductors. NANO LETTERS 2020; 20:4136-4143. [PMID: 32453959 DOI: 10.1021/acs.nanolett.9b05305] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Single photon sources hold great promise in quantum information technologies and are often materialized by single atoms, quantum dots, and point defects in dielectric materials. Yet, these entities are vulnerable to annealing and chemical passivation, ultimately influencing the stability of photonic devices. Here, we show that topologically stable dislocations in transition metal dichalcogenide monolayers can act as single photon sources, as supported by calculated defect levels, diploe matrix elements for transition, and excitation lifetimes with first-principles. The emission from dislocations can range from 0.48 to 1.29 eV by varying their structure, charge state, and chemical makeup in contrast to the visible range provided by previously reported sources. Since recent experiments have controllably created dislocations in monolayer materials, these results open the door to utilizing robustly stable defects for quantum computing.
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Affiliation(s)
- Xiaocheng Zhou
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Zhuhua Zhang
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Wanlin Guo
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
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8
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Affiliation(s)
| | - Jonathan P. Goss
- School of Engineering, University of Newcastle, Newcastle upon Tyne, NE1 7RU, U.K
| | - Ben L. Green
- Department of Physics, University of Warwick, Coventry, CV4 7AL, U.K
| | - Paul W. May
- School of Chemistry, University of Bristol, Bristol, BS8 1TS, U.K
| | - Mark E. Newton
- Department of Physics, University of Warwick, Coventry, CV4 7AL, U.K
| | - Chloe V. Peaker
- Gemological Institute of America, 50 West 47th Street, New York, New York 10036, United States
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9
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Bradac C, Gao W, Forneris J, Trusheim ME, Aharonovich I. Quantum nanophotonics with group IV defects in diamond. Nat Commun 2019; 10:5625. [PMID: 31819050 PMCID: PMC6901484 DOI: 10.1038/s41467-019-13332-w] [Citation(s) in RCA: 82] [Impact Index Per Article: 16.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2019] [Accepted: 11/01/2019] [Indexed: 12/16/2022] Open
Abstract
Diamond photonics is an ever-growing field of research driven by the prospects of harnessing diamond and its colour centres as suitable hardware for solid-state quantum applications. The last two decades have seen the field shaped by the nitrogen-vacancy (NV) centre with both breakthrough fundamental physics demonstrations and practical realizations. Recently however, an entire suite of other diamond defects has emerged-group IV colour centres-namely the Si-, Ge-, Sn- and Pb-vacancies. In this perspective, we highlight the leading techniques for engineering and characterizing these diamond defects, discuss the current state-of-the-art group IV-based devices and provide an outlook of the future directions the field is taking towards the realisation of solid-state quantum photonics with diamond.
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Affiliation(s)
- Carlo Bradac
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology, Sydney, NSW, 2007, Australia.
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Jacopo Forneris
- Istituto Nazionale di Fisica Nucleare (INFN) and Physics Department, Università degli Studi di Torino, Torino, 10125, Italy
| | - Matthew E Trusheim
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology, Sydney, NSW, 2007, Australia
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10
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Dovesi R, Gentile FS, Ferrari AM, Pascale F, Salustro S, D'Arco P. On the Models for the Investigation of Charged Defects in Solids: The Case of the VN - Defect in Diamond. J Phys Chem A 2019; 123:4806-4815. [PMID: 31079454 DOI: 10.1021/acs.jpca.9b03233] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Local charged defects in periodic systems are usually investigated by adopting the supercell charge compensated (CC) model, which consists of two main ingredients: (i) the periodic supercell, hopefully large enough to reduce to negligible values the interaction among defects belonging to different cells; (ii) a background of uniform compensating charge that restores the neutrality of the supercell and then avoids the "Coulomb catastrophe". Here, an alternative approach is proposed and compared to CC, the double defect (DD) model, in which another point defect is introduced in the supercell that provides (or accept) the electron to be transferred (subtracted) to the defect of interest. The DD model requires obviously a (much) larger supercell than CC, and the effect of the relative position of the two defects must be explored. A third possible option, the cluster approach, is not discussed here. The two models have been compared with reference to the VN- defect; for DD, the positive compensating charge is provided by a P atom. Three cubic supercells of increasing size (containing 216, 512, and 1000 atoms) and up to eight relative VN--P+ defect-defect positions have been considered. The comparison extends to the equilibrium geometry around the defect, band structure, charge and spin distribution, IR and Raman vibrational spectra, and electron paramagnetic resonance constants. It turns out that the CC and DD models provide very similar results for all of these properties, in particular when the P+ compensating defect is not too close to VN-.
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Affiliation(s)
- Roberto Dovesi
- Dipartimento di Chimica , Università di Torino and NIS (Nanostructured Interfaces and Surfaces) Centre , Via P. Giuria 5 , 10125 Torino , Italy
| | | | - Anna Maria Ferrari
- Dipartimento di Chimica , Università di Torino , Via P. Giuria 5 , 10125 Torino , Italy
| | - Fabien Pascale
- Université de Lorraine - Nancy, CNRS , Laboratoire de Physique et Chimie Théoriques , UMR 7019, Vandœuvre-lès-Nancy , 54506 France
| | - Simone Salustro
- Dipartimento di Chimica , Università di Torino and NIS (Nanostructured Interfaces and Surfaces) Centre , Via P. Giuria 5 , 10125 Torino , Italy
| | - Philippe D'Arco
- Institut des Sciences de la Terre Paris, ISTeP , UMR 7193, Sorbonne Université, CNRS-INSU , F-75005 Paris , France
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11
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Crane MJ, Petrone A, Beck RA, Lim MB, Zhou X, Li X, Stroud RM, Pauzauskie PJ. High-pressure, high-temperature molecular doping of nanodiamond. SCIENCE ADVANCES 2019; 5:eaau6073. [PMID: 31058218 PMCID: PMC6499550 DOI: 10.1126/sciadv.aau6073] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2018] [Accepted: 03/14/2019] [Indexed: 05/05/2023]
Abstract
The development of color centers in diamond as the basis for emerging quantum technologies has been limited by the need for ion implantation to create the appropriate defects. We present a versatile method to dope diamond without ion implantation by synthesis of a doped amorphous carbon precursor and transformation at high temperatures and high pressures. To explore this bottom-up method for color center generation, we rationally create silicon vacancy defects in nanodiamond and investigate them for optical pressure metrology. In addition, we show that this process can generate noble gas defects within diamond from the typically inactive argon pressure medium, which may explain the hysteresis effects observed in other high-pressure experiments and the presence of noble gases in some meteoritic nanodiamonds. Our results illustrate a general method to produce color centers in diamond and may enable the controlled generation of designer defects.
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Affiliation(s)
- M. J. Crane
- Department of Chemical Engineering, University of Washington, Seattle, WA 98195-1750, USA
| | - A. Petrone
- Department of Chemistry, University of Washington, Seattle, WA 98195-1700, USA
| | - R. A. Beck
- Department of Chemistry, University of Washington, Seattle, WA 98195-1700, USA
| | - M. B. Lim
- Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195-2120, USA
| | - X. Zhou
- Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195-2120, USA
| | - X. Li
- Department of Chemistry, University of Washington, Seattle, WA 98195-1700, USA
| | - R. M. Stroud
- Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375, USA
| | - P. J. Pauzauskie
- Department of Chemical Engineering, University of Washington, Seattle, WA 98195-1750, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195-2120, USA
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA 99352, USA
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12
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Weinzetl C, Görlitz J, Becker JN, Walmsley IA, Poem E, Nunn J, Becher C. Coherent Control and Wave Mixing in an Ensemble of Silicon-Vacancy Centers in Diamond. PHYSICAL REVIEW LETTERS 2019; 122:063601. [PMID: 30822048 DOI: 10.1103/physrevlett.122.063601] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2018] [Indexed: 06/09/2023]
Abstract
Strong light-matter interactions are critical for quantum technologies based on light, such as memories or nonlinear interactions. Solid state materials will be particularly important for such applications due to the relative ease of fabrication of components. Silicon vacancy centers (SiV^{-}) in diamond feature especially narrow inhomogeneous spectral lines, which are rare in solid materials. Here, we demonstrate resonant coherent manipulation, stimulated Raman adiabatic passage, and strong light-matter interaction via the four-wave mixing of a weak signal field in an ensemble of SiV^{-} centers.
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Affiliation(s)
- Christian Weinzetl
- Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom
| | - Johannes Görlitz
- Naturwissenschaftlich-Technische Fakultät, Fachbereich Physik, Universität des Saarlandes, Campus E 2.6, 66123 Saarbrücken, Germany
| | - Jonas Nils Becker
- Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom
| | - Ian A Walmsley
- Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom
| | - Eilon Poem
- Department of Physics of Complex Systems, Weizmann Institute of Science, Rehovot 76100, Israel
| | - Joshua Nunn
- Centre for Photonics and Photonic Materials, Department of Physics, University of Bath, Claverton Down, Bath BA2 7AY, United Kingdom
| | - Christoph Becher
- Naturwissenschaftlich-Technische Fakultät, Fachbereich Physik, Universität des Saarlandes, Campus E 2.6, 66123 Saarbrücken, Germany
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13
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Gupta S, Yang JH, Yakobson BI. Two-Level Quantum Systems in Two-Dimensional Materials for Single Photon Emission. NANO LETTERS 2019; 19:408-414. [PMID: 30532982 DOI: 10.1021/acs.nanolett.8b04159] [Citation(s) in RCA: 25] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Single photon emission (SPE) by a solid-state source requires presence of a distinct two-level quantum system, usually provided by point defects. Here we note that a number of qualities offered by novel, two-dimensional materials, their all-surface openness and optical transparence, tighter quantum confinement, and reduced charge screening-are advantageous for achieving an ideal SPE. On the basis of first-principles calculations and point-group symmetry analysis, a strategy is proposed to design paramagnetic defect complex with reduced symmetry, meeting all the requirements for SPE: its electronic states are well isolated from the host material bands, belong to a majority spin eigenstate, and can be controllably excited by polarized light. The defect complex is thermodynamically stable and appears feasible for experimental realization to serve as an SPE-source, essential for quantum computing, with ReMoVS in MoS2 as one of the most practical candidates.
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Affiliation(s)
- Sunny Gupta
- Department of Materials Science and Nanoengineering, Department of Chemistry, and the Smalley Institute , Rice University , Houston , Texas 77005 , United States
| | - Ji-Hui Yang
- Department of Materials Science and Nanoengineering, Department of Chemistry, and the Smalley Institute , Rice University , Houston , Texas 77005 , United States
| | - Boris I Yakobson
- Department of Materials Science and Nanoengineering, Department of Chemistry, and the Smalley Institute , Rice University , Houston , Texas 77005 , United States
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14
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Mei Y, Chen C, Fan D, Jiang M, Li X, Hu X. Enhanced SiV photoluminescence by oxidation-induced nano-structures on diamond particle surfaces. NANOSCALE 2019; 11:656-662. [PMID: 30565628 DOI: 10.1039/c8nr07354f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
We successfully constructed nanostructures on the surface of diamond particles by oxidation, which drastically enhanced their silicon-vacancy (SiV) photoluminescence (PL) intensity. The {100} plane of the diamond crystal initially had a smooth surface and strong anti-oxidation ability, which converted to a nano-pyramid structure with the sides resembling a {111} crystal plane orientation after oxidation. The {111} plane originally presented vertically layered or scale-like structures, but exhibited irregular nanoporous structures with some ridges perpendicular to the {111} plane in the edge area after oxidation. Since the crystal orientation of these nano-structures matches the <111> aligned split-vacancy structure of the SiV center, the collection efficiency of SiV luminescence increased, such that the SiV emission intensity increased by 27-fold and 4-fold for the nano-pyramid and the irregular nano-porous structure, respectively. Oxidation also significantly improved the crystal quality of diamond, such that the lattice stress around the SiV color center reduced, narrowing the linewidth of the SiV PL peak to nearly 3 nm. This study provides a feasible way to optimize SiV photoluminescent properties by building nanostructures on the surface of diamond particles.
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Affiliation(s)
- Yingshuang Mei
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou, 310014, China.
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15
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Rose BC, Huang D, Zhang ZH, Stevenson P, Tyryshkin AM, Sangtawesin S, Srinivasan S, Loudin L, Markham ML, Edmonds AM, Twitchen DJ, Lyon SA, de Leon NP. Observation of an environmentally insensitive solid-state spin defect in diamond. Science 2018; 361:60-63. [PMID: 29976820 DOI: 10.1126/science.aao0290] [Citation(s) in RCA: 50] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/06/2017] [Revised: 11/13/2017] [Accepted: 05/04/2018] [Indexed: 11/03/2022]
Abstract
Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid-state platform. We report a color center that shows insensitivity to environmental decoherence caused by phonons and electric field noise: the neutral charge state of silicon vacancy (SiV0). Through careful materials engineering, we achieved >80% conversion of implanted silicon to SiV0 SiV0 exhibits spin-lattice relaxation times approaching 1 minute and coherence times approaching 1 second. Its optical properties are very favorable, with ~90% of its emission into the zero-phonon line and near-transform-limited optical linewidths. These combined properties make SiV0 a promising defect for quantum network applications.
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Affiliation(s)
- Brendon C Rose
- Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
| | - Ding Huang
- Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
| | - Zi-Huai Zhang
- Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
| | - Paul Stevenson
- Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
| | - Alexei M Tyryshkin
- Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
| | - Sorawis Sangtawesin
- Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
| | - Srikanth Srinivasan
- Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
| | - Lorne Loudin
- Gemological Institute of America, New York, NY 10036, USA
| | | | | | | | - Stephen A Lyon
- Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
| | - Nathalie P de Leon
- Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA.
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16
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Hetzl M, Wierzbowski J, Hoffmann T, Kraut M, Zuerbig V, Nebel CE, Müller K, Finley JJ, Stutzmann M. GaN Nanowire Arrays for Efficient Optical Read-Out and Optoelectronic Control of NV Centers in Diamond. NANO LETTERS 2018; 18:3651-3660. [PMID: 29792713 DOI: 10.1021/acs.nanolett.8b00763] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Solid-state quantum emitters embedded in a semiconductor crystal environment are potentially scalable platforms for quantum optical networks operated at room temperature. Prominent representatives are nitrogen-vacancy (NV) centers in diamond showing coherent entanglement and interference with each other. However, these emitters suffer from inefficient optical outcoupling from the diamond and from fluctuations of their charge state. Here, we demonstrate the implementation of regular n-type gallium nitride nanowire arrays on diamond as photonic waveguides to tailor the emission direction of surface-near NV centers and to electrically control their charge state in a p-i-n nanodiode. We show that the electrical excitation of single NV centers in such a diode can efficiently replace optical pumping. By the engineering of the array parameters, we find an optical read-out efficiency enhanced by a factor of 10 and predict a lateral NV-NV coupling 3 orders of magnitude stronger through evanescently coupled nanowire antennas compared to planar diamond not covered by nanowires, which opens up new possibilities for large-scale on-chip quantum-computing applications.
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Affiliation(s)
- Martin Hetzl
- Walter Schottky Institut and Physics Department , Technische Universität München , 85748 Garching , Germany
| | - Jakob Wierzbowski
- Walter Schottky Institut and Physics Department , Technische Universität München , 85748 Garching , Germany
| | - Theresa Hoffmann
- Walter Schottky Institut and Physics Department , Technische Universität München , 85748 Garching , Germany
| | - Max Kraut
- Walter Schottky Institut and Physics Department , Technische Universität München , 85748 Garching , Germany
| | - Verena Zuerbig
- Fraunhofer Institute for Applied Solid State Physics IAF , 79108 Freiburg , Germany
| | - Christoph E Nebel
- Fraunhofer Institute for Applied Solid State Physics IAF , 79108 Freiburg , Germany
| | - Kai Müller
- Walter Schottky Institut and Physics Department , Technische Universität München , 85748 Garching , Germany
| | - Jonathan J Finley
- Walter Schottky Institut and Physics Department , Technische Universität München , 85748 Garching , Germany
| | - Martin Stutzmann
- Walter Schottky Institut and Physics Department , Technische Universität München , 85748 Garching , Germany
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17
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Lemonde MA, Meesala S, Sipahigil A, Schuetz MJA, Lukin MD, Loncar M, Rabl P. Phonon Networks with Silicon-Vacancy Centers in Diamond Waveguides. PHYSICAL REVIEW LETTERS 2018; 120:213603. [PMID: 29883171 DOI: 10.1103/physrevlett.120.213603] [Citation(s) in RCA: 33] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2018] [Indexed: 06/08/2023]
Abstract
We propose and analyze a novel realization of a solid-state quantum network, where separated silicon-vacancy centers are coupled via the phonon modes of a quasi-one-dimensional diamond waveguide. In our approach, quantum states encoded in long-lived electronic spin states can be converted into propagating phonon wave packets and be reabsorbed efficiently by a distant defect center. Our analysis shows that under realistic conditions, this approach enables the implementation of high-fidelity, scalable quantum communication protocols within chip-scale spin-qubit networks. Apart from quantum information processing, this setup constitutes a novel waveguide QED platform, where strong-coupling effects between solid-state defects and individual propagating phonons can be explored at the quantum level.
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Affiliation(s)
- M-A Lemonde
- Vienna Center for Quantum Science and Technology, Atominstitut, TU Wien, 1040 Vienna, Austria
- Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, Singapore 117543, Singapore
| | - S Meesala
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138, USA
| | - A Sipahigil
- Institute for Quantum Information and Matter and Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
| | - M J A Schuetz
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
| | - M D Lukin
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
| | - M Loncar
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138, USA
| | - P Rabl
- Vienna Center for Quantum Science and Technology, Atominstitut, TU Wien, 1040 Vienna, Austria
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18
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Chou JP, Bodrog Z, Gali A. First-Principles Study of Charge Diffusion between Proximate Solid-State Qubits and Its Implications on Sensor Applications. PHYSICAL REVIEW LETTERS 2018; 120:136401. [PMID: 29694166 DOI: 10.1103/physrevlett.120.136401] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2017] [Indexed: 06/08/2023]
Abstract
Solid-state qubits from paramagnetic point defects in solids are promising platforms to realize quantum networks and novel nanoscale sensors. Recent advances in materials engineering make it possible to create proximate qubits in solids that might interact with each other, leading to electron spin or charge fluctuation. Here we develop a method to calculate the tunneling-mediated charge diffusion between point defects from first principles and apply it to nitrogen-vacancy (NV) qubits in diamond. The calculated tunneling rates are in quantitative agreement with previous experimental data. Our results suggest that proximate neutral and negatively charged NV defect pairs can form a NV-NV molecule. A tunneling-mediated model for the source of decoherence of the near-surface NV qubits is developed based on our findings on the interacting qubits in diamond.
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Affiliation(s)
- Jyh-Pin Chou
- Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest, Hungary
| | - Zoltán Bodrog
- Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest, Hungary
| | - Adam Gali
- Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest, Hungary and Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, Hungary
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19
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Green BL, Mottishaw S, Breeze BG, Edmonds AM, D'Haenens-Johansson UFS, Doherty MW, Williams SD, Twitchen DJ, Newton ME. Neutral Silicon-Vacancy Center in Diamond: Spin Polarization and Lifetimes. PHYSICAL REVIEW LETTERS 2017; 119:096402. [PMID: 28949565 DOI: 10.1103/physrevlett.119.096402] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2017] [Indexed: 06/07/2023]
Abstract
We demonstrate optical spin polarization of the neutrally charged silicon-vacancy defect in diamond (SiV^{0}), an S=1 defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but nonzero at below-resonant energies. We measure an ensemble spin coherence time T_{2}>100 μs at low-temperature, and a spin relaxation limit of T_{1}>25 s. Optical spin-state initialization around 946 nm allows independent initialization of SiV^{0} and NV^{-} within the same optically addressed volume, and SiV^{0} emits within the telecoms down-conversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that SiV^{0} is a promising candidate for a long-range quantum communication technology.
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Affiliation(s)
- B L Green
- Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - S Mottishaw
- Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - B G Breeze
- Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - A M Edmonds
- Element Six Limited, Global Innovation Centre, Fermi Avenue OX11 0QR, United Kingdom
| | | | - M W Doherty
- Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Australian Capital Territory 0200, Australia
| | - S D Williams
- Element Six Limited, Global Innovation Centre, Fermi Avenue OX11 0QR, United Kingdom
| | - D J Twitchen
- Element Six Limited, Global Innovation Centre, Fermi Avenue OX11 0QR, United Kingdom
| | - M E Newton
- Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
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20
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Ondič L, Varga M, Hruška K, Fait J, Kapusta P. Enhanced Extraction of Silicon-Vacancy Centers Light Emission Using Bottom-Up Engineered Polycrystalline Diamond Photonic Crystal Slabs. ACS NANO 2017; 11:2972-2981. [PMID: 28238257 DOI: 10.1021/acsnano.6b08412] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Silicon vacancy (SiV) centers are optically active defects in diamond. The SiV centers, in contrast to nitrogen vacancy (NV) centers, possess narrow and efficient luminescence spectrum (centered at ≈738 nm) even at room temperature, which can be utilized for quantum photonics and sensing applications. However, most of light generated in diamond is trapped in the material due to the phenomenon of total internal reflection. In order to overcome this issue, we have prepared two-dimensional photonic crystal slabs from polycrystalline diamond thin layers with high density of SiV centers employing bottom-up growth on quartz templates. We have shown that the spectral overlap between the narrow light emission of the SiV centers and the leaky modes extracting the emission into almost vertical direction (where it can be easily detected) can be obtained by controlling the deposition time. More than 14-fold extraction enhancement of the SiV centers photoluminescence was achieved compared to an uncorrugated sample. Computer simulation confirmed that the extraction enhancement originates from the efficient light-matter interaction between light emitted from the SiV centers and the photonic crystal slab.
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Affiliation(s)
- Lukáš Ondič
- Institute of Physics, Academy of Sciences of the Czech Republic , v.v.i., Cukrovarnická 10, CZ-162 00, Prague 6, Czech Republic
| | - Marian Varga
- Institute of Physics, Academy of Sciences of the Czech Republic , v.v.i., Cukrovarnická 10, CZ-162 00, Prague 6, Czech Republic
| | - Karel Hruška
- Institute of Physics, Academy of Sciences of the Czech Republic , v.v.i., Cukrovarnická 10, CZ-162 00, Prague 6, Czech Republic
| | - Jan Fait
- Institute of Physics, Academy of Sciences of the Czech Republic , v.v.i., Cukrovarnická 10, CZ-162 00, Prague 6, Czech Republic
- Faculty of Electrical Engineering, Czech Technical University in Prague , Technická 2, CZ-166 27, Prague 6, Czech Republic
| | - Peter Kapusta
- J. Heyrovský Institute of Physical Chemistry, Academy of Sciences of the Czech Republic , v.v.i., Dolejškova 3, CZ-182 23, Prague 8, Czech Republic
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21
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Coherent control of a strongly driven silicon vacancy optical transition in diamond. Nat Commun 2017; 8:14451. [PMID: 28218237 PMCID: PMC5321752 DOI: 10.1038/ncomms14451] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2016] [Accepted: 12/30/2016] [Indexed: 11/23/2022] Open
Abstract
The ability to prepare, optically read out and coherently control single quantum states is a key requirement for quantum information processing. Optically active solid-state emitters have emerged as promising candidates with their prospects for on-chip integration as quantum nodes and sources of coherent photons connecting these nodes. Under a strongly driving resonant laser field, such quantum emitters can exhibit quantum behaviour such as Autler–Townes splitting and the Mollow triplet spectrum. Here we demonstrate coherent control of a strongly driven optical transition in silicon vacancy centre in diamond. Rapid optical detection of photons enabled the observation of time-resolved coherent Rabi oscillations and the Mollow triplet spectrum. Detection with a probing transition further confirmed Autler–Townes splitting generated by a strong laser field. The coherence time of the emitted photons is comparable to its lifetime and robust under a very strong driving field, which is promising for the generation of indistinguishable photons. Silicon vacancy centres in diamond have been identified as potential highly efficient solid-state qubits for on-chip integration. Here, Zhou et al. demonstrate coherent control of silicon vacancy centres in nanodiamonds and observe Autler-Townes splitting, Mollow triplet and Rabi oscillations.
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22
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Ekimov EA, Kondrin MV. Vacancy-impurity centers in diamond: perspectives of synthesis and applications. ACTA ACUST UNITED AC 2016. [DOI: 10.3367/ufnr.2016.11.037959] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/01/2022]
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23
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Grudinkin SA, Feoktistov NA, Baranov MA, Smirnov AN, Davydov VY, Golubev VG. Low-strain heteroepitaxial nanodiamonds: fabrication and photoluminescence of silicon-vacancy colour centres. NANOTECHNOLOGY 2016; 27:395606. [PMID: 27560659 DOI: 10.1088/0957-4484/27/39/395606] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Nanodiamonds with the 'diamond' 1332.5 cm(-1) Raman line as narrow as 1.8 cm(-1) have been produced by reactive ion etching in oxygen plasma of heteroepitaxial diamond particles grown by microwave plasma enhanced chemical vapour deposition (MWPECVD) on silicon. After the etching, a doublet is recorded in the zero-phonon line photoluminescence spectra of an ensemble of silicon-vacancy (SiV) centres at 10 K. Each line of the doublet is split into two lines corresponding to the optical transitions between the split excited and ground energy levels of the SiV centres. These Raman and photoluminescent features have been observed previously only in low-strain homoepitaxial diamond films and single-crystal diamond.
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Affiliation(s)
- Sergey A Grudinkin
- Ioffe Institute, 26 Polytekhnicheskaya, St. Petersburg, 194021, Russia. ITMO University, 49 Kronverksky Ave., St. Petersburg, 197101, Russia
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24
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Iwasaki T, Ishibashi F, Miyamoto Y, Doi Y, Kobayashi S, Miyazaki T, Tahara K, Jahnke KD, Rogers LJ, Naydenov B, Jelezko F, Yamasaki S, Nagamachi S, Inubushi T, Mizuochi N, Hatano M. Germanium-Vacancy Single Color Centers in Diamond. Sci Rep 2015; 5:12882. [PMID: 26250337 PMCID: PMC4528202 DOI: 10.1038/srep12882] [Citation(s) in RCA: 52] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/12/2015] [Accepted: 06/23/2015] [Indexed: 11/17/2022] Open
Abstract
Atomic-sized fluorescent defects in diamond are widely recognized as a promising solid state platform for quantum cryptography and quantum information processing. For these applications, single photon sources with a high intensity and reproducible fabrication methods are required. In this study, we report a novel color center in diamond, composed of a germanium (Ge) and a vacancy (V) and named the GeV center, which has a sharp and strong photoluminescence band with a zero-phonon line at 602 nm at room temperature. We demonstrate this new color center works as a single photon source. Both ion implantation and chemical vapor deposition techniques enabled fabrication of GeV centers in diamond. A first-principles calculation revealed the atomic crystal structure and energy levels of the GeV center.
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Affiliation(s)
- Takayuki Iwasaki
- 1] Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan [2] CREST, Japan Science and Technology Agency, Chiyoda, Tokyo
| | - Fumitaka Ishibashi
- Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
| | - Yoshiyuki Miyamoto
- 1] CREST, Japan Science and Technology Agency, Chiyoda, Tokyo [2] Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
| | - Yuki Doi
- Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
| | - Satoshi Kobayashi
- Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
| | - Takehide Miyazaki
- 1] CREST, Japan Science and Technology Agency, Chiyoda, Tokyo [2] Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
| | - Kosuke Tahara
- Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
| | - Kay D Jahnke
- Institute for Quantum Optics and Center for Integrated Quantum Science and Technology (IQst), Ulm University, Albert-Einstein-Allee 11, Ulm D-89081, Germany
| | - Lachlan J Rogers
- Institute for Quantum Optics and Center for Integrated Quantum Science and Technology (IQst), Ulm University, Albert-Einstein-Allee 11, Ulm D-89081, Germany
| | - Boris Naydenov
- Institute for Quantum Optics and Center for Integrated Quantum Science and Technology (IQst), Ulm University, Albert-Einstein-Allee 11, Ulm D-89081, Germany
| | - Fedor Jelezko
- Institute for Quantum Optics and Center for Integrated Quantum Science and Technology (IQst), Ulm University, Albert-Einstein-Allee 11, Ulm D-89081, Germany
| | - Satoshi Yamasaki
- 1] CREST, Japan Science and Technology Agency, Chiyoda, Tokyo [2] Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
| | - Shinji Nagamachi
- 1] Nagamachi Science Laboratory, Amagasaki, Hyogo 661-0976, Japan [2] Shiga University of Medical Science, Otsu, Shiga 520-2192, Japan
| | - Toshiro Inubushi
- Shiga University of Medical Science, Otsu, Shiga 520-2192, Japan
| | - Norikazu Mizuochi
- 1] CREST, Japan Science and Technology Agency, Chiyoda, Tokyo [2] Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
| | - Mutsuko Hatano
- 1] Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan [2] CREST, Japan Science and Technology Agency, Chiyoda, Tokyo
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25
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Abstract
Single-photon emitters with stable and uniform photoluminescence properties are important for quantum technology. However, in many cases, colour centres in diamond exhibit spectral diffusion and photoluminescence intensity fluctuation. It is therefore essential to investigate the dynamics of colour centres at the single defect level in order to enable the on-demand manipulation and improved applications in quantum technology. Here we report the polarization switching, intensity jumps and spectral shifting observed on a negatively charged single silicon-vacancy colour centre in diamond. The observed phenomena elucidate the single emitter dynamics induced by photoionization of nearby electron donors in the diamond.
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26
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Optical signatures of silicon-vacancy spins in diamond. Nat Commun 2015; 5:3328. [PMID: 24534908 DOI: 10.1038/ncomms4328] [Citation(s) in RCA: 47] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/12/2013] [Accepted: 01/27/2014] [Indexed: 12/25/2022] Open
Abstract
Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to date. Recently, this toolbox has expanded to include novel colour centres to realize more efficient spin-photon quantum interfaces. Of these, the silicon-vacancy centre stands out with highly desirable photonic properties. The challenge for utilizing this centre is to realize the hitherto elusive optical access to its electronic spin. Here we report spin-tagged resonance fluorescence from the negatively charged silicon-vacancy centre. Our measurements reveal a spin-state purity approaching unity in the excited state, highlighting the potential of the centre as an efficient spin-photon quantum interface.
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27
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Pingault B, Becker JN, Schulte CHH, Arend C, Hepp C, Godde T, Tartakovskii AI, Markham M, Becher C, Atatüre M. All-optical formation of coherent dark states of silicon-vacancy spins in diamond. PHYSICAL REVIEW LETTERS 2014; 113:263601. [PMID: 25615329 DOI: 10.1103/physrevlett.113.263601] [Citation(s) in RCA: 44] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2014] [Indexed: 06/04/2023]
Abstract
Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities that offer sufficient quality in both photonic and spin properties remains a challenge for this pursuit. The silicon-vacancy center has recently attracted much interest because of its spin-accessible optical transitions and the quality of its optical spectrum. Complementing these properties, spin coherence is essential for the suitability of this center as a spin-photon quantum interface. Here, we report all-optical generation of coherent superpositions of spin states in the ground state of a negatively charged silicon-vacancy center using coherent population trapping. Our measurements reveal a characteristic spin coherence time, T2*, exceeding 45 nanoseconds at 4 K. We further investigate the role of phonon-mediated coupling between orbital states as a source of irreversible decoherence. Our results indicate the feasibility of all-optical coherent control of silicon-vacancy spins using ultrafast laser pulses.
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Affiliation(s)
- Benjamin Pingault
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Jonas N Becker
- Fachrichtung 7.2 (Experimentalphysik), Universität des Saarlandes, Campus E2.6, 66123 Saarbrücken, Germany
| | - Carsten H H Schulte
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Carsten Arend
- Fachrichtung 7.2 (Experimentalphysik), Universität des Saarlandes, Campus E2.6, 66123 Saarbrücken, Germany
| | - Christian Hepp
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Tillmann Godde
- Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | | | - Matthew Markham
- Element Six Limited, Global Innovation Centre, Fermi Avenue, Harwell Oxford, Didcot, Oxfordshire OX11 0QR, United Kingdom
| | - Christoph Becher
- Fachrichtung 7.2 (Experimentalphysik), Universität des Saarlandes, Campus E2.6, 66123 Saarbrücken, Germany
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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28
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Rogers LJ, Jahnke KD, Metsch MH, Sipahigil A, Binder JM, Teraji T, Sumiya H, Isoya J, Lukin MD, Hemmer P, Jelezko F. All-optical initialization, readout, and coherent preparation of single silicon-vacancy spins in diamond. PHYSICAL REVIEW LETTERS 2014; 113:263602. [PMID: 25615330 DOI: 10.1103/physrevlett.113.263602] [Citation(s) in RCA: 67] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2014] [Indexed: 06/04/2023]
Abstract
The silicon-vacancy (SiV-) color center in diamond has attracted attention because of its unique optical properties. It exhibits spectral stability and indistinguishability that facilitate efficient generation of photons capable of demonstrating quantum interference. Here we show optical initialization and readout of electronic spin in a single SiV- center with a spin relaxation time of T1=2.4±0.2 ms. Coherent population trapping (CPT) is used to demonstrate coherent preparation of dark superposition states with a spin coherence time of T2⋆=35±3 ns. This is fundamentally limited by orbital relaxation, and an understanding of this process opens the way to extend coherence by engineering interactions with phonons. Hyperfine structure is observed in CPT measurements with the 29Si isotope which allows access to nuclear spin. These results establish the SiV- center as a solid-state spin-photon interface.
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Affiliation(s)
- Lachlan J Rogers
- Institute for Quantum Optics and Center for Integrated Quantum Science and Technology (IQst), Ulm University, Ulm D-89081, Germany
| | - Kay D Jahnke
- Institute for Quantum Optics and Center for Integrated Quantum Science and Technology (IQst), Ulm University, Ulm D-89081, Germany
| | - Mathias H Metsch
- Institute for Quantum Optics and Center for Integrated Quantum Science and Technology (IQst), Ulm University, Ulm D-89081, Germany
| | - Alp Sipahigil
- Department of Physics, Harvard University, 17 Oxford Street, Cambridge, Massachusetts 02138, USA
| | - Jan M Binder
- Institute for Quantum Optics and Center for Integrated Quantum Science and Technology (IQst), Ulm University, Ulm D-89081, Germany
| | - Tokuyuki Teraji
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Hitoshi Sumiya
- Advanced Materials R & D Laboratories, Sumitomo Electric Industries Limited, Itami, Hyogo 664-0016, Japan
| | - Junichi Isoya
- Research Center for Knowledge Communities, University of Tsukuba, 1-2 Kasuga, Tsukuba, Ibaraki 305-8550, Japan
| | - Mikhail D Lukin
- Department of Physics, Harvard University, 17 Oxford Street, Cambridge, Massachusetts 02138, USA
| | - Philip Hemmer
- Electrical & Computer Engineering Department, Texas A&M University, College Station, Texas 77843, USA
| | - Fedor Jelezko
- Institute for Quantum Optics and Center for Integrated Quantum Science and Technology (IQst), Ulm University, Ulm D-89081, Germany
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29
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Sipahigil A, Jahnke KD, Rogers LJ, Teraji T, Isoya J, Zibrov AS, Jelezko F, Lukin MD. Indistinguishable photons from separated silicon-vacancy centers in diamond. PHYSICAL REVIEW LETTERS 2014; 113:113602. [PMID: 25259977 DOI: 10.1103/physrevlett.113.113602] [Citation(s) in RCA: 94] [Impact Index Per Article: 9.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2014] [Indexed: 05/08/2023]
Abstract
We demonstrate that silicon-vacancy (SiV) centers in diamond can be used to efficiently generate coherent optical photons with excellent spectral properties. We show that these features are due to the inversion symmetry associated with SiV centers. The generation of indistinguishable single photons from separated emitters at 5 K is demonstrated in a Hong-Ou-Mandel interference experiment. Prospects for realizing efficient quantum network nodes using SiV centers are discussed.
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Affiliation(s)
- A Sipahigil
- Department of Physics, Harvard University, 17 Oxford Street, Cambridge, Massachusetts 02138, USA
| | - K D Jahnke
- Institute for Quantum Optics, University Ulm, Albert-Einstein-Allee 11, 89081 Ulm, Germany
| | - L J Rogers
- Institute for Quantum Optics, University Ulm, Albert-Einstein-Allee 11, 89081 Ulm, Germany
| | - T Teraji
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - J Isoya
- Research Center for Knowledge Communities, University of Tsukuba, 1-2 Kasuga, Tsukuba, Ibaraki 305-8550, Japan
| | - A S Zibrov
- Department of Physics, Harvard University, 17 Oxford Street, Cambridge, Massachusetts 02138, USA
| | - F Jelezko
- Institute for Quantum Optics, University Ulm, Albert-Einstein-Allee 11, 89081 Ulm, Germany
| | - M D Lukin
- Department of Physics, Harvard University, 17 Oxford Street, Cambridge, Massachusetts 02138, USA
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30
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Rogers LJ, Jahnke KD, Teraji T, Marseglia L, Müller C, Naydenov B, Schauffert H, Kranz C, Isoya J, McGuinness LP, Jelezko F. Multiple intrinsically identical single-photon emitters in the solid state. Nat Commun 2014; 5:4739. [PMID: 25162729 DOI: 10.1038/ncomms5739] [Citation(s) in RCA: 59] [Impact Index Per Article: 5.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/15/2014] [Accepted: 07/18/2014] [Indexed: 11/09/2022] Open
Abstract
Emitters of indistinguishable single photons are crucial for the growing field of quantum technologies. To realize scalability and increase the complexity of quantum optics technologies, multiple independent yet identical single-photon emitters are required. However, typical solid-state single-photon sources are inherently dissimilar, necessitating the use of electrical feedback or optical cavities to improve spectral overlap between distinct emitters. Here we demonstrate bright silicon vacancy (SiV(-)) centres in low-strain bulk diamond, which show spectral overlap of up to 91% and nearly transform-limited excitation linewidths. This is the first time that distinct single-photon emitters in the solid state have shown intrinsically identical spectral properties. Our results have impact on the application of single-photon sources for quantum optics and cryptography.
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Affiliation(s)
- L J Rogers
- Institute for Quantum Optics and Center for Integrated Quantum Science and Technology (IQst), Ulm University, Albert-Einstein-Allee 11, Ulm D-89081, Germany
| | - K D Jahnke
- Institute for Quantum Optics and Center for Integrated Quantum Science and Technology (IQst), Ulm University, Albert-Einstein-Allee 11, Ulm D-89081, Germany
| | - T Teraji
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - L Marseglia
- Institute for Quantum Optics and Center for Integrated Quantum Science and Technology (IQst), Ulm University, Albert-Einstein-Allee 11, Ulm D-89081, Germany
| | - C Müller
- Institute for Quantum Optics and Center for Integrated Quantum Science and Technology (IQst), Ulm University, Albert-Einstein-Allee 11, Ulm D-89081, Germany
| | - B Naydenov
- Institute for Quantum Optics and Center for Integrated Quantum Science and Technology (IQst), Ulm University, Albert-Einstein-Allee 11, Ulm D-89081, Germany
| | - H Schauffert
- Institute for Quantum Optics and Center for Integrated Quantum Science and Technology (IQst), Ulm University, Albert-Einstein-Allee 11, Ulm D-89081, Germany
| | - C Kranz
- Institute of Analytical and Bioanalytical Chemistry, Ulm University, Ulm D-89081, Germany
| | - J Isoya
- Research Center for Knowledge Communities, University of Tsukuba, 1-2 Kasuga, Tsukuba, Ibaraki 305-8550, Japan
| | - L P McGuinness
- Institute for Quantum Optics and Center for Integrated Quantum Science and Technology (IQst), Ulm University, Albert-Einstein-Allee 11, Ulm D-89081, Germany
| | - F Jelezko
- Institute for Quantum Optics and Center for Integrated Quantum Science and Technology (IQst), Ulm University, Albert-Einstein-Allee 11, Ulm D-89081, Germany
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31
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Zhang H, Aharonovich I, Glenn DR, Schalek R, Magyar AP, Lichtman JW, Hu EL, Walsworth RL. Silicon-vacancy color centers in nanodiamonds: cathodoluminescence imaging markers in the near infrared. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2014; 10:1908-1913. [PMID: 24596272 DOI: 10.1002/smll.201303582] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/19/2013] [Revised: 01/15/2014] [Indexed: 06/03/2023]
Affiliation(s)
- Huiliang Zhang
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
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32
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Singh S, Thomas V, Martyshkin D, Kozlovskaya V, Kharlampieva E, Catledge SA. Spatially controlled fabrication of a bright fluorescent nanodiamond-array with enhanced far-red Si-V luminescence. NANOTECHNOLOGY 2014; 25:045302. [PMID: 24394286 PMCID: PMC3956127 DOI: 10.1088/0957-4484/25/4/045302] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We demonstrate a novel approach to precisely pattern fluorescent nanodiamond-arrays with enhanced far-red intense photostable luminescence from silicon-vacancy (Si-V) defect centers. The precision-patterned pre-growth seeding of nanodiamonds is achieved by a scanning probe 'dip-pen' nanolithography technique using electrostatically driven transfer of nanodiamonds from 'inked' cantilevers to a UV-treated hydrophilic SiO2 substrate. The enhanced emission from nanodiamond dots in the far-red is achieved by incorporating Si-V defect centers in a subsequent chemical vapor deposition treatment. The development of a suitable nanodiamond ink and mechanism of ink transport, and the effect of humidity and dwell time on nanodiamond patterning are investigated. The precision patterning of as-printed (pre-CVD) arrays with dot diameter and dot height as small as 735 nm ± 27 nm and 61 nm ± 3 nm, respectively, and CVD-treated fluorescent ND-arrays with consistently patterned dots having diameter and height as small as 820 nm ± 20 nm and, 245 nm ± 23 nm, respectively, using 1 s dwell time and 30% RH is successfully achieved. We anticipate that the far-red intense photostable luminescence (~738 nm) observed from Si-V defect centers integrated in spatially arranged nanodiamonds could be beneficial for the development of next generation fluorescence-based devices and applications.
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Affiliation(s)
- Sonal Singh
- Center for Nanoscale Materials and Biointegration (CNMB), University of Alabama at Birmingham, Birmingham, 35294-1170, USA
- Department of Physics, University of Alabama at Birmingham, Birmingham, 35294-1170, USA
| | - Vinoy Thomas
- Center for Nanoscale Materials and Biointegration (CNMB), University of Alabama at Birmingham, Birmingham, 35294-1170, USA
- Department of Materials Science and Engineering, University of Alabama at Birmingham, Birmingham, 35294-1170, USA
| | - Dmitry Martyshkin
- Department of Physics, University of Alabama at Birmingham, Birmingham, 35294-1170, USA
| | - Veronika Kozlovskaya
- Department of Chemistry, University of Alabama at Birmingham, Birmingham, 35294-1170, USA
| | - Eugenia Kharlampieva
- Department of Chemistry, University of Alabama at Birmingham, Birmingham, 35294-1170, USA
| | - Shane A. Catledge
- Center for Nanoscale Materials and Biointegration (CNMB), University of Alabama at Birmingham, Birmingham, 35294-1170, USA
- Department of Physics, University of Alabama at Birmingham, Birmingham, 35294-1170, USA
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33
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Hepp C, Müller T, Waselowski V, Becker JN, Pingault B, Sternschulte H, Steinmüller-Nethl D, Gali A, Maze JR, Atatüre M, Becher C. Electronic structure of the silicon vacancy color center in diamond. PHYSICAL REVIEW LETTERS 2014; 112:036405. [PMID: 24484153 DOI: 10.1103/physrevlett.112.036405] [Citation(s) in RCA: 88] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2013] [Indexed: 05/03/2023]
Abstract
The negatively charged silicon vacancy (SiV) color center in diamond has recently proven its suitability for bright and stable single photon emission. However, its electronic structure so far has remained elusive. We here explore the electronic structure by exposing single SiV defects to a magnetic field where the Zeeman effect lifts the degeneracy of magnetic sublevels. The similar responses of single centers and a SiV ensemble in a low strain reference sample prove our ability to fabricate almost perfect single SiVs, revealing the true nature of the defect's electronic properties. We model the electronic states using a group-theoretical approach yielding a good agreement with the experimental observations. Furthermore, the model correctly predicts polarization measurements on single SiV centers and explains recently discovered spin selective excitation of SiV defects.
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Affiliation(s)
- Christian Hepp
- Fachrichtung 7.2 (Experimentalphysik), Universität des Saarlandes, Campus E2.6, 66123 Saarbrücken, Germany
| | - Tina Müller
- Atomic, Mesoscopic and Optical Physics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Ave, Cambridge CB3 0HE, United Kingdom
| | - Victor Waselowski
- Departmento de Fisica, Pontificia Universidad Catolica de Chile, Santiago 7820436, Chile
| | - Jonas N Becker
- Fachrichtung 7.2 (Experimentalphysik), Universität des Saarlandes, Campus E2.6, 66123 Saarbrücken, Germany
| | - Benjamin Pingault
- Atomic, Mesoscopic and Optical Physics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Ave, Cambridge CB3 0HE, United Kingdom
| | - Hadwig Sternschulte
- DiaCoating GmbH, Mitterweg 24, 6020 Innsbruck, Austria and Fakultät für Physik, Technische Universität München, James-Franck-Strasse 1, 85748 Garching, Germany
| | | | - Adam Gali
- Department of Atomic Physics, Budapest University of Technology and Economics, H-1111 Budapest, Hungary and Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest, Hungary
| | - Jeronimo R Maze
- Departmento de Fisica, Pontificia Universidad Catolica de Chile, Santiago 7820436, Chile
| | - Mete Atatüre
- Atomic, Mesoscopic and Optical Physics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Ave, Cambridge CB3 0HE, United Kingdom
| | - Christoph Becher
- Fachrichtung 7.2 (Experimentalphysik), Universität des Saarlandes, Campus E2.6, 66123 Saarbrücken, Germany
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34
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Bodrog Z, Gali A. Two-site diamond-like point defects as new single-photon emitters. EPJ WEB OF CONFERENCES 2014. [DOI: 10.1051/epjconf/20147805001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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35
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Vlasov II, Shiryaev AA, Rendler T, Steinert S, Lee SY, Antonov D, Vörös M, Jelezko F, Fisenko AV, Semjonova LF, Biskupek J, Kaiser U, Lebedev OI, Sildos I, Hemmer PR, Konov VI, Gali A, Wrachtrup J. Molecular-sized fluorescent nanodiamonds. NATURE NANOTECHNOLOGY 2014; 9:54-8. [PMID: 24317283 DOI: 10.1038/nnano.2013.255] [Citation(s) in RCA: 99] [Impact Index Per Article: 9.9] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2013] [Accepted: 10/28/2013] [Indexed: 05/03/2023]
Abstract
Doping of carbon nanoparticles with impurity atoms is central to their application. However, doping has proven elusive for very small carbon nanoparticles because of their limited availability and a lack of fundamental understanding of impurity stability in such nanostructures. Here, we show that isolated diamond nanoparticles as small as 1.6 nm, comprising only ∼400 carbon atoms, are capable of housing stable photoluminescent colour centres, namely the silicon vacancy (SiV). Surprisingly, fluorescence from SiVs is stable over time, and few or only single colour centres are found per nanocrystal. We also observe size-dependent SiV emission supported by quantum-chemical simulation of SiV energy levels in small nanodiamonds. Our work opens the way to investigating the physics and chemistry of molecular-sized cubic carbon clusters and promises the application of ultrasmall non-perturbative fluorescent nanoparticles as markers in microscopy and sensing.
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Affiliation(s)
- Igor I Vlasov
- General Physics Institute RAS, Vavilov Street 38, 119991 Moscow, Russia
| | - Andrey A Shiryaev
- Institute of Physical Chemistry and Electrochemistry RAS, Leninsky pr. 31, 119071, Moscow, Russia
| | - Torsten Rendler
- 3rd Physical Institute and Research Center SCOPE, University of Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart, Germany
| | - Steffen Steinert
- 3rd Physical Institute and Research Center SCOPE, University of Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart, Germany
| | - Sang-Yun Lee
- 3rd Physical Institute and Research Center SCOPE, University of Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart, Germany
| | - Denis Antonov
- 3rd Physical Institute and Research Center SCOPE, University of Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart, Germany
| | - Márton Vörös
- Department of Atomic Physics, Budapest University of Technology and Economics, Budapest, Budafoki út 8, H-1111, Hungary
| | - Fedor Jelezko
- Institute for Quantum Optics, University of Ulm, Albert-Einstein-Allee 11, 89081 Ulm, Germany
| | - Anatolii V Fisenko
- Vernadsky Institute of Geochemistry and Analytical Chemistry RAS, Kosygin Street 19, Moscow, Russia
| | - Lubov F Semjonova
- Vernadsky Institute of Geochemistry and Analytical Chemistry RAS, Kosygin Street 19, Moscow, Russia
| | - Johannes Biskupek
- Central Facility of Electron Microscopy, University of Ulm, Albert-Einstein-Allee 11, 89081 Ulm, Germany
| | - Ute Kaiser
- Central Facility of Electron Microscopy, University of Ulm, Albert-Einstein-Allee 11, 89081 Ulm, Germany
| | - Oleg I Lebedev
- Laboratoire CRISMAT, UMR 6508 CNRS ENSICAEN, 6 boulevard Marechal Juin, 14050 Caen, France
| | - Ilmo Sildos
- Institute of Physics, University of Tartu, Riia Street 142, 51014 Tartu, Estonia
| | - Philip R Hemmer
- Department of Electrical and Computer Engineering, 3128 Texas A&M University, College Station, Texas 77843-3128, USA
| | - Vitaly I Konov
- General Physics Institute RAS, Vavilov Street 38, 119991 Moscow, Russia
| | - Adam Gali
- 1] Department of Atomic Physics, Budapest University of Technology and Economics, Budapest, Budafoki út 8, H-1111, Hungary [2] Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, PO Box 49, 1525 Budapest, Hungary
| | - Jörg Wrachtrup
- 3rd Physical Institute and Research Center SCOPE, University of Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart, Germany
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36
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Merson TD, Castelletto S, Aharonovich I, Turbic A, Kilpatrick TJ, Turnley AM. Nanodiamonds with silicon vacancy defects for nontoxic photostable fluorescent labeling of neural precursor cells. OPTICS LETTERS 2013; 38:4170-3. [PMID: 24321951 DOI: 10.1364/ol.38.004170] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Nanodiamonds (NDs) containing silicon vacancy (SiV) defects were evaluated as a potential biomarker for the labeling and fluorescent imaging of neural precursor cells (NPCs). SiV-containing NDs were synthesized using chemical vapor deposition and silicon ion implantation. Spectrally, SiV-containing NDs exhibited extremely stable fluorescence and narrow bandwidth emission with an excellent signal to noise ratio exceeding that of NDs containing nitrogen-vacancy centers. NPCs labeled with NDs exhibited normal cell viability and proliferative properties consistent with biocompatibility. We conclude that SiV-containing NDs are a promising biomedical research tool for cellular labeling and optical imaging in stem cell research.
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37
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Hu W, Li Z, Yang J. Surface and size effects on the charge state of NV center in nanodiamonds. COMPUT THEOR CHEM 2013. [DOI: 10.1016/j.comptc.2013.06.015] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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38
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Hu W, Li Z, Yang J, Hou J. Nondecaying long range effect of surface decoration on the charge state of NV center in diamond. J Chem Phys 2013; 138:034702. [DOI: 10.1063/1.4775364] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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39
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Lee JC, Aharonovich I, Magyar AP, Rol F, Hu EL. Coupling of silicon-vacancy centers to a single crystal diamond cavity. OPTICS EXPRESS 2012; 20:8891-8897. [PMID: 22513599 DOI: 10.1364/oe.20.008891] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Optical coupling of an ensemble of silicon-vacancy (SiV) centers to single-crystal diamond microdisk cavities is demonstrated. The cavities are fabricated from a single-crystal diamond membrane generated by ion implantation and electrochemical liftoff followed by homo-epitaxial overgrowth. Whispering gallery modes spectrally overlap with the zero-phonon line (ZPL) of the SiV centers and exhibit quality factors ∼ 2200. Lifetime reduction from 1.8 ns to 1.48 ns is observed from SiV centers in the cavity compared to those in the membrane outside the cavity. These results are pivotal in developing diamond integrated photonics networks.
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Affiliation(s)
- Jonathan C Lee
- School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA.
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40
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Synthesis and characterization of a nanocrystalline diamond aerogel. Proc Natl Acad Sci U S A 2011; 108:8550-3. [PMID: 21555550 DOI: 10.1073/pnas.1010600108] [Citation(s) in RCA: 42] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Aerogel materials have myriad scientific and technological applications due to their large intrinsic surface areas and ultralow densities. However, creating a nanodiamond aerogel matrix has remained an outstanding and intriguing challenge. Here we report the high-pressure, high-temperature synthesis of a diamond aerogel from an amorphous carbon aerogel precursor using a laser-heated diamond anvil cell. Neon is used as a chemically inert, near-hydrostatic pressure medium that prevents collapse of the aerogel under pressure by conformally filling the aerogel's void volume. Electron and X-ray spectromicroscopy confirm the aerogel morphology and composition of the nanodiamond matrix. Time-resolved photoluminescence measurements of recovered material reveal the formation of both nitrogen- and silicon- vacancy point-defects, suggesting a broad range of applications for this nanocrystalline diamond aerogel.
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41
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Acosta VM, Bauch E, Ledbetter MP, Waxman A, Bouchard LS, Budker D. Temperature dependence of the nitrogen-vacancy magnetic resonance in diamond. PHYSICAL REVIEW LETTERS 2010; 104:070801. [PMID: 20366868 DOI: 10.1103/physrevlett.104.070801] [Citation(s) in RCA: 188] [Impact Index Per Article: 13.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2009] [Indexed: 05/22/2023]
Abstract
The temperature dependence of the magnetic-resonance spectra of nitrogen-vacancy (NV-) ensembles in the range of 280-330 K was studied. Four samples prepared under different conditions were analyzed with NV- concentrations ranging from 10 ppb to 15 ppm. For all samples, the axial zero-field splitting (ZFS) parameter D was found to vary significantly with temperature, T, as dD/dT=-74.2(7) kHz/K. The transverse ZFS parameter E was nonzero (between 4 and 11 MHz) in all samples, and exhibited a temperature dependence of dE/(EdT)=-1.4(3)x10{-4} K-1. The results might be accounted for by considering local thermal expansion. The temperature dependence of the ZFS parameters presents a significant challenge for diamond magnetometers and may ultimately limit their bandwidth and sensitivity.
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Affiliation(s)
- V M Acosta
- Department of Physics, University of California, Berkeley, California 94720-7300, USA.
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42
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Delaney P, Greer JC, Larsson JA. Spin-polarization mechanisms of the nitrogen-vacancy center in diamond. NANO LETTERS 2010; 10:610-614. [PMID: 20085271 DOI: 10.1021/nl903646p] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
The nitrogen-vacancy (NV) center in diamond has shown great promise for quantum information due to the ease of initializing the qubit and of reading out its state. Here we show the leading mechanism for these effects gives results opposite from experiment; instead both must rely on new physics. Furthermore, NV centers fabricated in nanometer-sized diamond clusters are stable, motivating a bottom-up qubit approach, with the possibility of quite different optical properties to bulk.
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Affiliation(s)
- Paul Delaney
- Queen's University Belfast, University Road, Belfast, BT7 1NN, Northern Ireland.
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43
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44
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Trojánek F, Zídek K, Dzurnák B, Kozák M, Malý P. Nonlinear optical properties of nanocrystalline diamond. OPTICS EXPRESS 2010; 18:1349-1357. [PMID: 20173962 DOI: 10.1364/oe.18.001349] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
We report on investigation of nonlinear optical phenomena in nanocrystalline diamond prepared by microwave plasma enhanced chemical vapour deposition. We observed the upconverted photoluminescence, the second and the third harmonic generation and Z-scan signal. The value of the third order nonlinear susceptibility was estimated. Our results show that nonlinear optical properties of nanocrystalline diamond have many features of the bulk diamond affected to some extent by the presence of grain boundaries.
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Affiliation(s)
- F Trojánek
- Faculty of Mathematics and Physics, Charles University in Prague, Prague 2, Czech Republic.
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45
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Gali A, Janzén E, Deák P, Kresse G, Kaxiras E. Theory of spin-conserving excitation of the N-V(-) center in diamond. PHYSICAL REVIEW LETTERS 2009; 103:186404. [PMID: 19905820 DOI: 10.1103/physrevlett.103.186404] [Citation(s) in RCA: 44] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/23/2009] [Indexed: 05/28/2023]
Abstract
The negatively charged nitrogen-vacancy defect in diamond is an important atomic-scale structure that can be used as a qubit in quantum computing and as a marker in biomedical applications. Its usefulness relies on the ability to optically excite electrons between well-defined gap states, which requires a clear and detailed understanding of the relevant states and excitation processes. Here we show that by using hybrid density-functional-theory calculations in a large supercell we can reproduce the zero-phonon line and the Stokes and anti-Stokes shifts, yielding a complete picture of the spin-conserving excitation of this defect.
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Affiliation(s)
- Adam Gali
- Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8., H-1111, Budapest, Hungary
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46
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Zyubin AS, Mebel AM, Hayashi M, Chang HC, Lin SH. Quantum chemical modeling of photoadsorption properties of the nitrogen-vacancy point defect in diamond. J Comput Chem 2009; 30:119-31. [DOI: 10.1002/jcc.21042] [Citation(s) in RCA: 32] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
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Barnard AS, Vlasov II, Ralchenko VG. Predicting the distribution and stability of photoactive defect centers in nanodiamond biomarkers. ACTA ACUST UNITED AC 2009. [DOI: 10.1039/b813515k] [Citation(s) in RCA: 32] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Barnard AS. Diamond standard in diagnostics: nanodiamond biolabels make their mark. Analyst 2009; 134:1751-64. [DOI: 10.1039/b908532g] [Citation(s) in RCA: 128] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/25/2022]
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Hossain FM, Doherty MW, Wilson HF, Hollenberg LCL. Ab initio electronic and optical properties of the N - v- center in diamond. PHYSICAL REVIEW LETTERS 2008; 101:226403. [PMID: 19113494 DOI: 10.1103/physrevlett.101.226403] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/17/2008] [Indexed: 05/27/2023]
Abstract
Despite tremendous activity in employing the N- V- center in a host of quantum technology applications, the electronic and optical properties of the system are still not theoretically well understood. We have conducted density functional theory calculations of the N- V- system which show convergence at the 3 x 3 x 3 supercell level and for the first time produce a quantitatively accurate picture of the optical transition energy, excited-state lifetime, and optical polarization anisotropy taking into account all possible transitions within all contributing energy bands. These calculations were augmented by a group theoretical analysis, in sum providing a new ab initio understanding of this important solid-state quantum system.
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Affiliation(s)
- Faruque M Hossain
- Quantum Communications Victoria, School of Physics, University of Melbourne, Victoria 3010, Australia.
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Lin CK, Wang YH, Chang HC, Hayashi M, Lin SH. One- and two-photon absorption properties of diamond nitrogen-vacancy defect centers: A theoretical study. J Chem Phys 2008; 129:124714. [DOI: 10.1063/1.2987717] [Citation(s) in RCA: 20] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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