Antiferrodistortive reconstruction of the PbTiO(3)(001) surface

Origin of Ferroelectric Domain Wall Alignment with Surface Trenches in Ultrathin Films

Engraving trenches on the surfaces of ultrathin ferroelectric (FE) films and superlattices promises control over the orientation and direction of FE domain walls (DWs). Through exploiting the phenomenon of DW-surface trench (ST) parallel alignment, systems where DWs are known for becoming electrical conductors could now become useful nanocircuits using only standard lithographical techniques. Despite this clear application, the microscopic mechanism responsible for the alignment phenomenon has remained elusive. Using ultrathin PbTiO_{3} films as a model system, we explore this mechanism with large scale density functional theory simulations on as many as 5,136 atoms. Although we expect multiple contributing factors, we show that parallel DW-ST alignment can be well explained by this configuration giving rise to an arrangement of electric dipole moments which best restore polar continuity to the film. These moments preserve the polar texture of the pristine film, thus minimizing ST-induced depolarizing fields. Given the generality of this mechanism, we suggest that STs could be used to engineer other exotic polar textures in a variety of FE nanostructures as supported by the appearance of ST-induced polar cycloidal modulations in this Letter. Our simulations also support experimental observations of ST-induced negative strains which have been suggested to play a role in the alignment mechanism.

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Out-of-plane ferroelectricity with a high transition temperature in nanometer-scale films is required to miniaturize electronic devices. Direct visualization of stable ferroelectric polarization and its switching behavior in atomically thick films is critical for achieving this goal. Here, ferroelectric order at room temperature in the two-dimensional limit is demonstrated in tetragonal BiFeO₃ ultrathin films. Using aberration-corrected scanning transmission electron microscopy, we directly observed robust out-of-plane spontaneous polarization in one-unit-cell-thick BiFeO₃ films. High-resolution piezoresponse force microscopy measurements show that the polarization is stable and switchable, whereas a tunneling electroresistance effect of up to 370% is achieved in BiFeO₃ films. Based on first-principles calculations and Kelvin probe force microscopy measurements, we explain the mechanism of polarization stabilization by the ionic displacements in oxide electrode and the surface charges. Our results indicate that critical thickness for ferroelectricity in the BiFeO₃ film is virtually absent, making it a promising candidate for high-density nonvolatile memories.

High temperature perpendicular ferroelectricity in nano thin films is crucial for miniaturization of electronic devices. Here the authors show the presence of stable and switchable out-of-plane ferroelectricity in tetragonal BiFeO₃ thin films at the two-dimensional limit and 370% tunneling electroresistance in ferroelectric tunnel junctions.

Polarization Rotation in Ultrathin Ferroelectrics Tailored by Interfacial Oxygen Octahedral Coupling

Multiple polar states and giant piezoelectric responses could be driven by polarization rotation in ferroelectric films, which have potential functionalities in modern material applications. Although theoretical calculations have predicted polarization rotation in pure PbTiO₃ films without domain walls and strains, direct experiment has rarely confirmed such polar states under this condition. Here, we observed that interfacial oxygen octahedral coupling (OOC) can introduce an oxygen octahedral rotation, which induces polarization rotation in single domain PbTiO₃ films with negligible strains. We have grown ultrathin PbTiO₃ films (3.2 nm) on both SrTiO₃ and Nb:SrTiO₃ substrates and applied aberration-corrected scanning transmission electron microscopy (STEM) to study the interfacial OOC effect. Atomic mappings unit cell by unit cell demonstrate that polarization rotation occurs in PbTiO₃ films on both substrates. The distortion of oxygen octahedra in PbTiO₃ is proven by annular bright-field STEM. The critical thickness for this polarization rotation is about 4 nm (10 unit cells), above which polarization rotation disappears. First-principles calculations manifest that the interfacial OOC is responsible for the polarization rotation state. These results may shed light on further understanding the polarization behavior in ultrathin ferroelectrics and be helpful to develop relevant devices as polarization rotation is known to be closely related to superior electromechanical responses.

Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures

For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical-electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this.

Novel high-temperature ferroelectric domain morphology in PbTiO3 ultrathin films

Exotic domain morphologies in ferroic materials are an exciting avenue for the development of novel nanoelectronics. In this work we have used large scale molecular dynamics to construct a strain-temperature phase diagram of the domain morphology of PbTiO₃ ultrathin films. Sampling a wide interval of strain values over a temperature range up to the Curie temperature T_c, we found that epitaxial strain induces the formation of a variety of closure- and in-plane domain morphologies. The local strain and ferroelectric-antiferrodistortive coupling at the film surface vary for the strain mediated transition sequence and this could offer a route for experimental observation of the morphologies. Remarkably, we identify a new nanobubble domain morphology that is stable in the high-temperature regime for compressively strained PbTiO₃. We demonstrate that the formation mechanism of the nanobubble domains morphology is related to the wandering of flux closure domain walls, which we characterise using the hypertoroidal moment. These results provide insight into the local behaviour and dynamics of ferroelectric domains in ultrathin films to open up potential applications for bubble domains in new technologies and pathways to control and exploit novel phenomena in dimensionally constrained materials.

Ferroelectric triggering of carbon monoxide adsorption on lead zirco-titanate (001) surfaces

Atomically clean lead zirco-titanate PbZr_0.2Ti_0.8O₃ (001) layers exhibit a polarization oriented inwards P⁽⁻⁾, visible by a band bending of all core levels towards lower binding energies, whereas as introduced layers exhibit P⁽⁺⁾ polarization under air or in ultrahigh vacuum. The magnitude of the inwards polarization decreases when the temperature is increased at 700 K. CO adsorption on P⁽⁻⁾ polarized surfaces saturates at about one quarter of a monolayer of carbon, and occurs in both molecular (oxidized) and dissociated (reduced) states of carbon, with a large majority of reduced state. The sticking of CO on the surface in ultrahigh vacuum is found to be directly related to the P⁽⁻⁾ polarization state of the surface. A simple electrostatic mechanism is proposed to explain these dissociation processes and the sticking of carbon on P⁽⁻⁾ polarized areas. Carbon desorbs also when the surface is irradiated with soft X-rays. Carbon desorption when the polarization is lost proceeds most probably in form of CO₂. Upon carbon desorption cycles, the ferroelectric surface is depleted in oxygen and at some point reverses its polarization, owing to electrons provided by oxygen vacancies which are able to screen the depolarization field produced by positive fixed charges at the surface.

New modalities of strain-control of ferroelectric thin films

Ferroelectrics, with their spontaneous switchable electric polarization and strong coupling between their electrical, mechanical, thermal, and optical responses, provide functionalities crucial for a diverse range of applications. Over the past decade, there has been significant progress in epitaxial strain engineering of oxide ferroelectric thin films to control and enhance the nature of ferroelectric order, alter ferroelectric susceptibilities, and to create new modes of response which can be harnessed for various applications. This review aims to cover some of the most important discoveries in strain engineering over the past decade and highlight some of the new and emerging approaches for strain control of ferroelectrics. We discuss how these new approaches to strain engineering provide promising routes to control and decouple ferroelectric susceptibilities and create new modes of response not possible in the confines of conventional strain engineering. To conclude, we will provide an overview and prospectus of these new and interesting modalities of strain engineering helping to accelerate their widespread development and implementation in future functional devices.

Atomic mechanism of polarization-controlled surface reconstruction in ferroelectric thin films

At the ferroelectric surface, the broken translational symmetry induced bound charge should significantly alter the local atomic configurations. Experimentally revealing the atomic structure of ferroelectric surface, however, is very challenging due to the strong spatial variety between nano-sized domains, and strong interactions between the polarization and other structural parameters. Here, we study surface structures of Pb(Zr_0.2Ti_0.8)O₃ thin film by using the annular bright-field imaging. We find that six atomic layers with suppressed polarization and a charged 180° domain wall are at negatively poled surfaces, no reconstruction exists at positively poled surfaces, and seven atomic layers with suppressed polarization and a charged 90° domain wall exist at nominally neutral surfaces in ferroelastic domains. Our results provide critical insights into engineering ferroelectric thin films, fine grain ceramics and surface chemistry devices. The state-of-the-art methodology demonstrated here can greatly advance our understanding of surface science for oxides.

Miniature of electronic devices is attractive yet challenging due to structural variation at nanoscale. Here, Gao et al. report atomic imaging of reconstruction and unusual domain walls on Pb(Zr_0.2Ti_0.8)O₃ surfaces, providing possibilities to engineer nanoscale structural change.

Polarization-driven catalysis via ferroelectric oxide surfaces

Ferroelectric polarization can tune the surface chemistry: enhancing technologically important catalytic reactions such as NO_x direct decomposition and SO₂ oxidation.

Extrinsic and intrinsic charge trapping at the graphene/ferroelectric interface

The interface between graphene and the ferroelectric superlattice PbTiO3/SrTiO3 (PTO/STO) is studied. Tuning the transition temperature through the PTO/STO volume fraction minimizes the adorbates at the graphene/ferroelectric interface, allowing robust ferroelectric hysteresis to be demonstrated. "Intrinsic" charge traps from the ferroelectric surface defects can adversely affect the graphene channel hysteresis and can be controlled by careful sample processing, enabling systematic study of the charge trapping mechanism.

Local suppression of ferroelectricity at PbTiO3 surface steps: a density functional theory study

Ab initio (first-principles) density functional theory (DFT) calculations are performed within the local density approximations (LDA) to investigate the ferroelectricity at PbTiO(3) surface steps consisting of (001) and (100) surfaces with a spontaneous polarization along [100]. For both the PbO- and TiO(2)-terminated surface steps, the [100] polarization is suppressed and the [001] polarization appears at their upper terraces, which results in a rotation of polarizations at the surface steps. The polarization rotation is induced by the local variation of the covalent Pb-O bond due to the charge redistribution at the surface steps. Furthermore, we investigate the interaction of the surface steps. Although surface steps with the same polarization configuration exhibit little interaction, steps of different types interact with each other strongly, suppressing the ferroelectricity, especially on the upper terrace.

Equilibrium polarization of ultrathin PbTiO3 with surface compensation controlled by oxygen partial pressure

We present a synchrotron x-ray study of the equilibrium polarization structure of ultrathin PbTiO(3) films on SrRuO(3) electrodes epitaxially grown on SrTiO(3) (001) substrates, as a function of temperature and the external oxygen partial pressure (pO(2)) controlling their surface charge compensation. We find that the ferroelectric Curie temperature (T(C)) varies with pO(2) and has a minimum at the intermediate pO(2), where the polarization below T(C) changes sign. The experiments are in qualitative agreement with a model based on Landau theory that takes into account the interaction of the phase transition with the electrochemical equilibria for charged surface species. The paraelectric phase is stabilized at intermediate pO(2) when the concentrations of surface species are insufficient to compensate either polar orientation.

First-principles study on ferroelectricity at PbTiO3 surface steps

We performed ab initio density functional theory calculations to investigate ferroelectricity at PbTiO(3) surface steps consisting of (100) and (001) surfaces with the polar axis in the [010] direction. Ferroelectricity was enhanced at PbO-terminated surface steps due to enhanced covalent Pb-O bonding because of the low coordination number of Pb atoms at the step edge. In contrast, ferroelectric distortions were suppressed at TiO(2)-terminations, because of electron transfer from Pb-O sites to Ti-O sites. Spontaneous polarization at the surface step increased when tensile strain was applied in the [010] direction and decreased when compressive strain was applied. At a critical compressive strain, the polarization direction changed and a polydomain structure was formed that consisted of 90° and 180° domain walls aligned with the surface step edge. This polydomain structure compensates surface charges that would generate a depolarizing field, thereby stabilizing ferroelectric distortions at the surface step. The polydomain structure also explains the formation mechanism of the experimentally observed 180° domain wall pinned at the surface step edge.

New phenomena at the interfaces of very thin ferroelectric oxides

We present a brief review of the role of interfacial physics in ferroelectric oxides, with an emphasis on the importance of boundary conditions that determine the properties of very thin ferroelectric films and superlattices. As well as discussing the screening problem, and the role of strain and electrostatics in ferroelectrics, we highlight some of the possibilities in fine period superlattices where the high density of interfaces can lead to new and potentially useful phenomena.

Unit-cell scale mapping of ferroelectricity and tetragonality in epitaxial ultrathin ferroelectric films

Typically, polarization and strain in ferroelectric materials are coupled, leading to the generally accepted direct relation between polarization and unit-cell tetragonality. Here, by means of high-resolution transmission electron microscopy we map, on the unit-cell scale, the degree of tetragonality and the displacements of cations away from the centrosymmetry positions in an ultrathin epitaxial PbZr(0.2)Ti(0.8)O(3) film on a SrRuO(3) electrode layer deposited on a SrTiO(3) substrate. The lattice is highly tetragonal at the centre of the film, whereas it shows reduced tetragonality close to the interfaces. Most strikingly, we find that the maximum off-centre displacements for the central area of the film do not scale with the tetragonality. This challenges the fundamental belief in a strong polarization-tetragonality coupling in PbTiO(3)-based ferroelectrics, at such thicknesses. Furthermore, a systematic reduction of the atomic displacements is measured at the interfaces, suggesting that interface-induced suppression of the ferroelectric polarization plays a critical role in the size effect of nanoscale ferroelectrics.

Stabilization of monodomain polarization in ultrathin PbTiO3 films

Using in situ high-resolution synchrotron x-ray scattering, the Curie temperature TC has been determined for ultrathin c-axis epitaxial PbTiO3 films on conducting substrates (SrRuO3 on SrTiO3), with surfaces exposed to a controlled vapor environment. The suppression of TC was relatively small, even for the thinnest film (1.2 nm). We observe that 180 degrees stripe domains do not form, indicating that the depolarizing field is compensated by free charge at both interfaces. This is confirmed by ab initio calculations that find polar ground states in the presence of ionic adsorbates.

Observation of nanoscale 180 degrees stripe domains in ferroelectric PbTiO3 thin films

We report the observation of periodic 180 degrees stripe domains below the ferroelectric transition in thin films. Epitaxial PbTiO3 films of thickness d=1.6 to 42 nm on SrTiO3 substrates were studied using x-ray scattering. Upon cooling below T(C), satellites appeared around Bragg peaks indicating the presence of 180 degrees stripe domains of period Lambda=3.7 to 24 nm. The dependence of Lambda on d agrees well with theory including epitaxial strain effects, while the suppression of T(C) for thinner films is significantly larger than that expected solely from stripe domains.