Surface charging and impulsive ion ejection during ultrashort pulsed laser ablation

Suppressing Metal Nanoparticle Ablation with Double-Pulse Femtosecond Laser Sintering

As a branch of laser powder bed fusion, selective laser sintering (SLS) with femtosecond (fs) lasers and metal nanoparticles (NPs) can achieve high precision and dense submicron features with reduced residual stress, due to the extremely short pulse duration. Successful sintering of metal NPs with fs laser is challenging due to the ablation caused by hot electron effects. In this study, a double-pulse sintering strategy with a pair of time-delayed fs-laser pulses is proposed for controlling the electron temperature while still maintaining a high enough lattice temperature. We demonstrate that when delay time is slightly longer than the electron-phonon coupling time of Cu NPs, the ablation area was drastically reduced and the power window for successful sintering was extended by about two times. Simultaneously, the heat-affected zone can be reduced by 66% (area). This new strategy can be adopted for all the SLS processes with fs laser and unlock the power of SLS with fs lasers for future applications.

Probing thermal dissipation dimensionality to laser ablation in the pulse duration range from 300 fs to 1 µs

We propose a quantitative method to determine the thermal dissipation dimensionality to laser ablation. We derived an analytical expression for the melting condition due to a single pulse for arbitrary spot diameters and pulse durations, which explicitly contains the dimensionality of the thermal diffusion process. As a demonstration, we compared the analytical expression with multi-shot ablation thresholds measured over pulse durations of more than six orders of magnitude for copper. The result shows that the thermal dissipation processes dominate for pulse durations longer than 5 ps, while nonthermal processes begin to dominate for shorter pulse durations.

Nanoscale reshaping of resonant dielectric microstructures by light-driven explosions

Femtosecond-laser-assisted material restructuring employs extreme optical intensities to localize the ablation regions. To overcome the minimum feature size limit set by the wave nature of photons, there is a need for new approaches to tailored material processing at the nanoscale. Here, we report the formation of deeply-subwavelength features in silicon, enabled by localized laser-induced phase explosions in prefabricated silicon resonators. Using short trains of mid-infrared laser pulses, we demonstrate the controllable formation of high aspect ratio (>10:1) nanotrenches as narrow as [Formula: see text]. The trench geometry is shown to be scalable with wavelength, and controlled by multiple parameters of the laser pulse train, such as the intensity and polarization of each laser pulse and their total number. Particle-in-cell simulations reveal localized heating of silicon beyond its boiling point and suggest its subsequent phase explosion on the nanoscale commensurate with the experimental data. The observed femtosecond-laser assisted nanostructuring of engineered microstructures (FLANEM) expands the nanofabrication toolbox and opens exciting opportunities for high-throughput optical methods of nanoscale structuring of solid materials.

Spatial distribution characteristics of plumes induced by femtosecond laser ablation of silicon in vacuum

The spatial distribution characteristics of plumes induced by femtosecond laser ablation of silicon in vacuum are studied by using spectroscopy. The plume spatial distribution clearly shows two zones with different characteristics. The center of the first zone is at a distance of approximately 0.5 mm from the target. Silicon ionic radiation, recombination radiation, and bremsstrahlung mainly occur in this zone, causing an exponential decay with a decay constant of approximately 0.151-0.163 mm. The second zone with a greater area, whose center is at a distance of approximately 1.5 mm from the target, follows the first zone. In this zone, the radiation from silicon atoms and electron-atom collisions dominates, leading to an allometric decay with an allometric exponent of approximately - 1.475 to - 1.376. In the second zone, the electron density spatial distribution is approximately arrowhead-shaped, which is potentially induced by collisions between ambient molecules and the particles in front of the plume. These results indicate that both the recombination effect and expansion effect play important roles and compete with each other in plumes. The recombination effect is dominant near the silicon surface, causing exponential decay. As the distance increases, the electron density decreases exponentially by recombination, causing a more intense expansion effect.

Molten-Volcanic-Ash-Phobic Thermal Barrier Coating based on Biomimetic Structure

Volcanic ash is a major threat to aviation safety. The softening/melting temperatures of volcanic ash lie far below typical aero-engine operating temperatures. Thus, molten ash can accelerate the failure of thermal barrier coatings (TBCs). Here, inspired by natural superhydrophobic surfaces (e.g., the lotus leaf), a molten-volcanic-ash-phobic TBC, which provides a large possibility to eliminate molten ash issues of TBCs, is developed. A hierarchically structured surface is first prepared on a (Gd_0.9 Yb_0.1 )₂ Zr₂ O₇ (GYbZ) pellet by ultrafast laser direct writing technology, aiming to confirm the feasibility of the biomimetic microstructure to repel molten volcanic ash wetting. Then biomimetic-structured GYbZ TBCs are successfully fabricated using plasma spray physical vapor deposition, which reveals "silicate" phobicity at high temperatures. The exciting molten-volcanic-ash-phobic attribute of the designed surfaces is attributed to the lotus-leaf-like dual-scale microstructure, emulating in particular the existence of nanoparticles. These findings may be an important step toward the development of next-generation aviation engines with greatly reduced vulnerability to environmental siliceous debris.

Femtosecond Laser Ablation of Quantum Dot Films toward Physical Unclonable Multilevel Fluorescent Anticounterfeiting Labels

Femtosecond laser ablation (FsLA) technology has been demonstrated to achieve programmable ablation and removal of diverse materials with high precision. Owing to the cross-scale and digital processing characteristics, the FsLA technology has attracted increasing interest. However, the moderate repeatability of FsLA limits its application in the fabrication of advanced micro-/nanostructures due to the nonidentity of each laser pulse and fluctuation of environment. Fortunately, moderate repeatability combined with programmable ablation and high precision perfectly matches with the technical requirements of a physical unclonable fluorescent anticounterfeiting label. Herein, we applied FsLA to quantum dot (QD) films to fabricate a physical unclonable multilevel fluorescent anticounterfeiting label. Visual Jilin University logos, quick response (QR) codes, microlines, and microholes have been achieved for the multilevel anticounterfeiting functions. Of particular significance, the microholes with a macroidentical and microidentifiable geometry guarantee the physical unclonable functions (PUFs). Moreover, the fluorescent anticounterfeiting label is compatible with deep learning algorithms that facilitate authentication to be convenient and accurate. This work shows a fantastic future potential to be a core anticounterfeiting technique for commercial products and drugs.

Lifetime visualization of femtosecond laser-induced plasma on GaP crystal

Gallium phosphide (GaP) is a widely used and promising semiconductor material for photonics devices and we suppose the ultrafast laser can be a competitive tool for GaP processing. We used an 800 nm centered femtosecond (fs) laser with a pulse duration of 50 fs to irradiate the GaP crystal. The ablation threshold was first determined, and then the ultrafast dynamics including plasma expansion, shockwave formation and propagation, and spectral evolution were acquired and analyzed. The evolution of ejected plasma in the initial stage changed from cylindrical to planar propagation with the augment of laser fluence. The study on the propagation properties of shockwaves showed that the energy of propelling shockwaves accounted for 12% to 18% of the laser pulse energy at all fluences above the ablation threshold. A prominent plasma splitting was observed at a fluence slightly higher than the threshold, and a phenomenon that the plasma protruded out of the shockwaves was also found. Finally, the transient temperature and density of electron at different fluences were calculated. The temperature difference between the plasma and the shockwave proved the heating effect of the plasma during ablation.

Optical and Thermal Behavior of Germanium Thin Films under Femtosecond Laser Irradiation

In this study, we theoretically investigate the response of a germanium thin film under femtosecond pulsed laser irradiation. Electron and lattice temperatures, as well as material-specific optical properties such as dielectric function and reflectivity, were calculated during the irradiation using an extended two-temperature model coupled with the carrier density rate equation and the Drude model. Melting and ablation fluence thresholds were also predicted, resulting in 0.14 J cm^-2 and 0.35 J cm^-2, respectively. An ultrafast change in both optical and thermal properties was detected upon laser irradiation. Results also indicate that thermal melting occurs after germanium takes on a metallic character during irradiation, and that the impact ionization process may have a critical role in the laser-induced thermal effect. Therefore, we suggest that the origin of the thermal modification of germanium surface under femtosecond laser irradiation is mostly due the impact ionization process and that its effect becomes more important when increasing the laser fluence.

Pulse-to-pulse detection of terahertz radiation emitted from the femtosecond laser ablation process

Determining the dynamics of electrons and ions emitted from a target material during laser ablation is crucial for desirable control of laser processing. However, these dynamics are still challenging to understand because of a lack of ubiquitous spectroscopic tools to observe tangled-up dynamics appearing at ultrafast timescales. Here by harnessing highly sensitive single-shot terahertz time-domain spectroscopy using an echelon mirror, we investigate pulse-to-pulse temporal profile of terahertz radiation generated from the material surface. We clearly found that the carrier-envelope phase and the electric field amplitude of the terahertz waveform systematically vary between the pre- and post-ablation depending on the laser fluence and irradiated pulse numbers. Our results provide a stepping-stone towards perception of Coulomb explosion occurring throughout the laser ablation process, which is indispensable for future laser processing applications.

One-Step Fabrication Method of GaN Films for Internal Quantum Efficiency Enhancement and Their Ultrafast Mechanism Investigation

The third-generation semiconductors are the cornerstone of the power semiconductor leap forward and have attracted much attention because of their excellent properties and wide applications. Meanwhile, femtosecond laser processing as a convenient method further improves the performance of the related devices and expands the application prospect. In this work, an approximate 3 times improvement of the internal quantum efficiency (IQE) and a 5.5 times enhancement of the photoluminescence (PL) intensity were achieved in the GaN film prepared using a one-step femtosecond laser fabrication method. Three types of final micro/nanostructures were found with different femtosecond laser fluences, which could be attributed to the decomposition, melting, bubble nucleation, and phase explosion of GaN. The mechanisms of the microbump structure formation and enhancement of IQE were studied experimentally by the time-resolved reflection pump-probe technique, X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Simulations for the laser-GaN interaction have also been performed to ascertain the micro/nanostructure formation principle. These results promote the potential applications of femtosecond lasers on GaN and other wide band gap semiconductors, such as UV-light-emitting diodes (LEDs), photodetectors, and random lasers for use in sensing and full-field imaging.

Ultrafast temporal-spatial dynamics of amorphous-to-crystalline phase transition in Ge2Sb2Te5 thin film triggered by multiple femtosecond laser pulses irradiation

Studies have shown that the crystallization phase state of Ge₂Sb₂Te₅ (GST) can be reversibly modulated by femtosecond (fs) laser multiple pulses, which have excellent applications in reconfigurable multi-level operation fields. In this study, the temporal-spatial crystalline evolution dynamics of amorphous GST film is investigated during two fs laser pulses excitation through a pump-probe shadowgraph imaging technique. A quasi-amorphous phase state, which is different from that in the initial as-deposited amorphous GST, is emerged through the first fs laser pulse excitation with a pulse energy lower than crystallization threshold. The experimental results reveal that a crystallization enhancement effect can be induced through the second pulse excitation based on this quasi-amorphous surface structure. The stimulative cluster generated in the quasi-amorphous reduces the amorphous-to-crystalline phase transition threshold for the second fs laser pulse irradiation. The spatially-resolved phase-transition threshold extension effect in a horizontal direction is proposed with the increasing pulse number to summarize the mechanism of the crystallization enhancement effect. The specific-grain-appearance (coarse grains and fine grains representing different phase transition approach) distributed area induced by single and double fs laser pulses irradiation are experimentally demonstrated corresponding to threshold extension theory.

Ablation of Copper Metal Films by Femtosecond Laser Multipulse Irradiation

Ablation of copper using multipulse femtosecond laser irradiation with an 800 nm wavelength and 120-fs pulse duration is investigated theoretically. A two-temperature model, which includes dynamic optical and thermal-physical properties, is considered. The numerical results of the material thermal response obtained by varying the pulse number, the separation times between pulses and laser fluences are presented. Our results show that the increasing of pulse number with a separation time less than the thermal relaxation time can dramatically enhance the lattice temperature without a noticeable increase in ablation depth. Therefore, we suggest that the vaporization rate can be augmented in comparison to the melting rate during the same single-phase explosion at the same total fluence where a fast heat accumulation effect plays an important role for cleaner ablation during micromachining.

Ultrashort pulse laser ablation of dielectrics: Thresholds, mechanisms, role of breakdown

In this paper, we establish connections between the thresholds and mechanisms of the damage and white-light generation upon femtosecond laser irradiation of wide-bandgap transparent materials. On the example of Corning Willow glass, evolution of ablation craters, their quality, and white-light emission were studied experimentally for 130-fs, 800-nm laser pulses. The experimental results indicate co-existence of several ablation mechanisms which can be separated in time. Suppression of the phase explosion mechanism of ablation was revealed at the middle of the irradiation spots. At high laser fluences, air ionization was found to strongly influence ablation rate and quality and the main mechanisms of the influence are analysed. To gain insight into the processes triggered by laser radiation in glass, numerical simulations have been performed with accounting for the balance of laser energy absorption and its distribution/redistribution in the sample, including bremsstrahlung emission from excited free-electron plasma. The simulations have shown an insignificant role of avalanche ionization at such short durations of laser pulses while pointing to high average energy of electrons up to several dozens of eV. At multi-pulse ablation regimes, improvement of crater quality was found as compared to single/few pulses.

Ablation dynamics of Co/ZnS targets under double pulse femtosecond laser irradiation

The ablation dynamics of Co/ZnS is highly sensitive to the details of an ultrafast laser pulse irradiation sequence.

Effect of the laser pulse width on the field evaporation behavior of metals and oxides

The laser assisted field-evaporation of metals and oxides strongly depends on the illumination conditions. Here we study the effect of laser pulse width using two different laser systems, with a pulse duration of a few tens of femtoseconds and a few tens of picoseconds, respectively. Adjusting the laser wavelength by nonlinear optical conversion systems, we study the evaporation behavior of FeCu and MgO samples. We prove that the laser pulse width does not affect the evaporation behavior, in the range of duration explored. These results are explained taking into account the absorption behavior of nanometric samples and their thermal properties.

Fabrication of a laser patterned flexible organic light-emitting diode on an optimized multilayered barrier

The fast-growing market of organic electronics stimulates the development of versatile technologies for structuring thin-film materials. Ultraviolet lasers have proven their full potential for patterning organic thin films, but only a few studies report on interaction with thin-film barrier layers. In this paper, we present an approach in which the laser patterning process is optimized together with the barrier film, leading to a highly selective patterning technology without introducing barrier damage. This optimization is crucial, as the barrier damage would lead to moisture and oxygen ingress, with accelerated device degradation as a result. Following process optimization, a laser processed flexible organic LED has been fabricated and thin-film encapsulated and its operation is shown for the first time in atmospheric conditions.

Parallel laser micromachining based on diffractive optical elements with dispersion compensated femtosecond pulses

We experimentally demonstrate multi-beam high spatial resolution laser micromachining with femtosecond pulses. The effects of chromatic aberrations as well as pulse stretching on the material processed due to diffraction were significantly mitigated by using a suited dispersion compensated module (DCM). This permits to increase the area of processing in a factor 3 in comparison with a conventional setup. Specifically, 52 blind holes have been drilled simultaneously onto a stainless steel sample with a 30 fs laser pulse in a parallel processing configuration.

Femtosecond-laser ablation dynamics of dielectrics: basics and applications for thin films

Laser ablation of dielectrics by ultrashort laser pulses is reviewed. The basic interaction between ultrashort light pulses and the dielectric material is described, and different approaches to the modeling of the femtosecond ablation dynamics are reviewed. Material excitation by ultrashort laser pulses is induced by a combination of strong-field excitation (multi-photon and tunnel excitation), collisional excitation (potentially leading to an avalanche process), and absorption in the plasma consisting of the electrons excited to the conduction band. It is discussed how these excitation processes can be described by various rate-equation models in combination with different descriptions of the excited electrons. The optical properties of the highly excited dielectric undergo a rapid change during the laser pulse, which must be included in a detailed modeling of the excitations. The material ejected from the dielectric following the femtosecond-laser excitation can potentially be used for thin-film deposition. The deposition rate is typically much smaller than that for nanosecond lasers, but film production by femtosecond lasers does possess several attractive features. First, the strong-field excitation makes it possible to produce films of materials that are transparent to the laser light. Second, the highly localized excitation reduces the emission of larger material particulates. Third, lasers with ultrashort pulses are shown to be particularly useful tools for the production of nanocluster films. The important question of the film stoichiometry relative to that of the target will be thoroughly discussed in relation to the films reported in the literature.

D-Scan measurement of ablation threshold incubation effects for ultrashort laser pulses

We report the validation of the Diagonal Scan (D-Scan) technique to determine the incubation parameter for ultrashort laser pulses ablation. A theory to calculate the laser pulses superposition and a procedure for quantifying incubation effects are described, and the results obtained for BK7 samples in the 100 fs regime are compared to the ones given by the traditional method, showing a good agreement.

Study on the carbon fragment anions produced by femtosecond laser ablation of solid C60

Production of the anions (negative ions) has been observed by femtosecond laser ablation (fsLA) of solid C(60) with a time-of-flight (TOF) mass spectrometer. In contrast to C(60)(+), production of C(60)(-) due to an electron capture is found very limited because of the small electron affinity of the C(60) molecule. Narrow TOF peaks of small carbon fragment anions C(n)(-) (n ≤ 23) suggest instantaneous production of the fragment anions through dissociative ionization of C(60). Production of the mono-hydrogenated carbon fragment anions C(n)H(-) has been observed and also the abrupt change in the yield of C(n)H(-) has been observed at n = 10, which is attributed to the structural change of the carbon fragments from a linear chain to a monocyclic ring. The results are found similar to those obtained for the carbon fragments produced by nanosecond laser ablation (nsLA) of solid C(60), which demonstrates that the thermalization in an ablation plasma washes away any difference in the nature of carbon fragments produced by fsLA and nsLA.

Evidence for an ultrafast breakdown of the BeO band structure due to swift argon and xenon ions

Auger-electron spectra associated with Be atoms in the pure metal lattice and in the stoichiometric oxide have been investigated for different incident charged particles. For fast incident electrons, for Ar7+ and Ar15+ ions as well as Xe15+ and Xe31+ ions at velocities of 6% to 10% the speed of light, there are strong differences in the corresponding spectral distributions of Be-K Auger lines. These differences are related to changes in the local electronic band structure of BeO on a femtosecond time scale after the passage of highly charged heavy ions.

Patterning of flexible organic light emitting diode (FOLED) stack using an ultrafast laser

A femtosecond laser has been successfully utilized for patterning thin Flexible Organic Light Emitting Diode (FOLED) structures of individual layer thickness around 100nm. The authors report in this paper a step-like ablation behavior at the layer interfaces which accounts for a local removal of entire layers. Various surface analyzing techniques are used to investigate the morphologies and chemical compositions within and in the vicinity of the ablation areas. This study opens a new avenue in selectively ablating different layers from a multilayer stack on flexible substrates using fs lasers allowing post deposition structuring of large area flexible organic electronic devices.

Origin of laser-induced near-subwavelength ripples: interference between surface plasmons and incident laser

We show that short-pulse laser-induced classical ripples on dielectrics, semiconductors, and conductors exhibit a prominent "non-classical" characteristic-in normal incidence the periods are definitely smaller than laser wavelengths, which indicates that the simplified scattering model should be revised. Taking into account the surface plasmons (SPs), we consider that the ripples result from the initial direct SP-laser interference and the subsequent grating-assisted SP-laser coupling. With the model, the period-decreasing phenomenon originates in the admixture of the field-distribution effect and the grating-coupling effect. Further, we propose an approach for obtaining the dielectric constant, electron density, and electron collision time of the high-excited surface. With the derived parameters, the numerical simulations are in good agreement with the experimental results. On the other hand, our results confirm that the surface irradiated by short-pulse laser with damage-threshold fluence should behave metallic, no matter for metal, semiconductor, or dielectric, and the short-pulse laser-induced subwavelength structures should be ascribed to a phenomenon of nano-optics.

Pure colloidal metal and ceramic nanoparticles from high-power picosecond laser ablation in water and acetone

The generation of colloids by laser ablation of solids in a liquid offers a nearly unlimited material variety and a high purity as no chemical precursors are required. The use of novel high-power ultra-short-pulsed laser systems significantly increases the production rates even in inflammable organic solvents. By applying an average laser power of 50 W and pulse durations below 10 ps, up to 5 mg min(-1) of nanoparticles have been generated directly in acetone, marking a breakthrough in productivity of ultra-short-pulsed laser ablation in liquids. The produced colloids remain stable for more than six months. In the case of yttria-stabilized zirconia ceramic, the nanoparticles retain the tetragonal crystal structure of the ablated target. Laser beam self-focusing plays an important role, as a beam radius change of 2% on the liquid surface can lead to a decrease of nanoparticle production rates of 90% if the target position is not re-adjusted.

Transient optical response of ultrafast nonequilibrium excited metals: effects of electron-electron contribution to collisional absorption

Approaching energy coupling in laser-irradiated metals, we point out the role of electron-electron collision as an efficient control factor for ultrafast optical absorption. The high degree of laser-induced electron-ion nonequilibrium drives a complex absorption pattern with consequences on the transient optical properties. Consequently, high electronic temperatures determine largely the collision frequency and establish a transition between absorptive regimes in solid and plasma phases. In particular, taking into account umklapp electron-electron collisions, we performed hydrodynamic simulations of the laser-matter interaction to calculate laser energy deposition during the electron-ion nonequilibrium stage and subsequent matter transformation phases. We observe strong correlations between optical and thermodynamic properties according to the experimental situations. A suitable connection between solid and plasma regimes is chosen in accordance with models that describe the behavior in extreme, asymptotic regimes. The proposed approach describes as well situations encountered in pump-probe types of experiments, where the state of matter is probed after initial excitation. Comparison with experimental measurements shows simulation results which are sufficiently accurate to interpret the observed material behavior. A numerical probe is proposed to analyze the transient optical properties of matter exposed to ultrashort pulsed laser irradiation at moderate and high intensities. Various thermodynamic states are assigned to the observed optical variation. Qualitative indications of the amount of energy coupled in the irradiated targets are obtained.

Electron trapping at point defects on hydroxylated silica surfaces

The origin of electron trapping and negative charging of hydroxylated silica surfaces is predicted based on accurate quantum-mechanical calculations. The calculated electron affinities of the two dominant neutral paramagnetic defects, the nonbridging oxygen center, identical with Si-O*, and the silicon dangling bond, identical with Si*, demonstrate that both defects are deep electron traps and can form the corresponding negatively charged defects. We predict the structure and optical absorption energies of these diamagnetic defects.

Femtosecond field ion emission by surface optical rectification

We show that a model based on the surface optical rectification effect associated with the nonlinear response of free electrons may explain quantitatively, without adjustable parameters, all the observed features of the ultrafast laser-assisted field-ion emission from metal tips. Moreover, the same model provides also a plausible explanation for the low-fluence ultrafast laser ablation recently observed in metal surfaces and nanoparticles. We further test our model with experiments of ultrafast laser-assisted field-ion emission from tungsten tips in the tomographic atom probe.

Electron and nuclear dynamics of molecular clusters in ultraintense laser fields. III. Coulomb explosion of deuterium clusters

In this paper we present a theoretical and computational study of the energetics and temporal dynamics of Coulomb explosion of molecular clusters of deuterium (D2)n/2 (n = 480 - 7.6 x 10(4), cluster radius R0 = 13.1 - 70 A) in ultraintense laser fields (laser peak intensity I = 10(15) - 10(20)W cm(-2)). The energetics of Coulomb explosion was inferred from the dependence of the maximal energy EM and the average energy Eav of the product D+ ions on the laser intensity, the laser pulse shape, the cluster radius, and the laser frequency. Electron dynamics of outer cluster ionization and nuclear dynamics of Coulomb explosion were investigated by molecular dynamics simulations. Several distinct laser pulse shape envelopes, involving a rectangular field, a Gaussian field, and a truncated Gaussian field, were employed to determine the validity range of the cluster vertical ionization (CVI) approximation. The CVI predicts that Eav, EM proportional to R0(2) and that the energy distribution is P(E) proportional to E1/2. For a rectangular laser pulse the CVI conditions are satisfied when complete outer ionization is obtained, with the outer ionization time toi being shorter than both the pulse width and the cluster radius doubling time tau2. By increasing toi, due to the increase of R0 or the decrease of I, we have shown that the deviation of Eav from the corresponding CVI value (Eav(CVI)) is (Eav(CVI) - Eav)/Eav(CVI) approximately (toi/2.91tau2)2. The Gaussian pulses trigger outer ionization induced by adiabatic following of the laser field and of the cluster size, providing a pseudo-CVI behavior at sufficiently large laser fields. The energetics manifest the existence of a finite range of CVI size dependence, with the validity range for the applicability of the CVI being R0 < or = (R0)I, with (R0)I representing an intensity dependent boundary radius. Relating electron dynamics of outer ionization to nuclear dynamics for Coulomb explosion induced by a Gaussian pulse, the boundary radius (R0)I and the corresponding ion average energy (Eav)I were inferred from simulations and described in terms of an electrostatic model. Two independent estimates of (R0)I, which involve the cluster size where the CVI relation breaks down and the cluster size for the attainment of complete outer ionization, are in good agreement with each other, as well as with the electrostatic model for cluster barrier suppression. The relation (Eav)I proportional to (R0)I(2) provides the validity range of the pseudo-CVI domain for the cluster sizes and laser intensities, where the energetics of D+ ions produced by Coulomb explosion of (D)n clusters is optimized. The currently available experimental data [Madison et al., Phys. Plasmas 11, 1 (2004)] for the energetics of Coulomb explosion of (D)n clusters (Eav = 5 - 7 keV at I = 2 x 10(18) W cm(-2)), together with our simulation data, lead to the estimates of R0 = 51 - 60 A, which exceed the experimental estimate of R0 = 45 A. The predicted anisotropy of the D+ ion energies in the Coulomb explosion at I = 10(18) W cm(-2) is in accord with experiment. We also explored the laser frequency dependence of the energetics of Coulomb explosion in the range nu = 0.1 - 2.1 fs(-1) (lambda = 3000 - 140 nm), which can be rationalized in terms of the electrostatic model.