Electrostatic potential screened by a two-dimensional electron system: a real-space observation by scanning-tunneling spectroscopy

Interfacial Coupling and Electronic Structure of Two-Dimensional Silicon Grown on the Ag(111) Surface at High Temperature

Freestanding silicene, a monolayer of Si arranged in a honeycomb structure, has been predicted to give rise to massless Dirac fermions, akin to graphene. However, Si structures grown on a supporting substrate can show properties that strongly deviate from the freestanding case. Here, combining scanning tunneling microscopy/spectroscopy and differential conductance mapping, we show that the electrical properties of the (√3 x √3) phase of few-layer Si grown on Ag(111) strongly depend on film thickness, where the electron phase coherence length decreases and the free-electron-like surface state gradually diminishes when approaching the interface. These features are presumably attributable to the inelastic inter-band electron-electron scattering originating from the overlap between the surface state, interface state and the bulk state of the substrate. We further demonstrate that the intrinsic electronic structure of the as grown (√3 x √3) phase is identical to that of the (√3 x √3)R30° reconstructed Ag on Si(111), both of which exhibit the parabolic energy-momentum dispersion relation with comparable electron effective masses. These findings highlight the essential role of interfacial coupling on the properties of two-dimensional Si structures grown on supporting substrates, which should be thoroughly scrutinized in pursuit of silicene.

Observation of finite-wavelength screening in high-energy-density matter

A key component for the description of charged particle systems is the screening of the Coulomb interaction between charge carriers. First investigated in the 1920s by Debye and Hückel for electrolytes, charge screening is important for determining the structural and transport properties of matter as diverse as astrophysical and laboratory plasmas, nuclear matter such as quark-gluon plasmas, electrons in solids, planetary cores and charged macromolecules. For systems with negligible dynamics, screening is still mostly described using a Debye-Hückel-type approach. Here, we report the novel observation of a significant departure from the Debye-Hückel-type model in high-energy-density matter by probing laser-driven, shock-compressed plastic with high-energy X-rays. We use spectrally resolved X-ray scattering in a geometry that enables direct investigation of the screening cloud, and demonstrate that the observed elastic scattering amplitude is only well described within a more general approach.

Electronic bandgap and edge reconstruction in phosphorene materials

Single-layer black phosphorus (BP), or phosphorene, is a highly anisotropic two-dimensional elemental material possessing promising semiconductor properties for flexible electronics. However, the direct bandgap of single-layer black phosphorus predicted theoretically has not been directly measured, and the properties of its edges have not been considered in detail. Here we report atomic scale electronic variation related to strain-induced anisotropic deformation of the puckered honeycomb structure of freshly cleaved black phosphorus using a high-resolution scanning tunneling spectroscopy (STS) survey along the light (x) and heavy (y) effective mass directions. Through a combination of STS measurements and first-principles calculations, a model for edge reconstruction is also determined. The reconstruction is shown to self-passivate most dangling bonds by switching the coordination number of phosphorus from 3 to 5 or 3 to 4.

Theoretical investigation on nearsightedness of finite model and molecular systems based on linear response function analysis

We examined nearsightedness of electronic matter (NEM) of finite systems on the basis of linear response function (LRF). From the computational results of a square-well model system, the behavior of responses obviously depends on the number of electrons (N): as N increases, LRF, δρ(r)/δv(r′), decays rapidly for the distance, |r−r′|. This exemplifies that the principle suggested by Kohn and Prodan holds even for finite systems: the cause of NEM is destructive interference among electron density amplitudes. In addition, we examined double-well model systems, which have low-lying degenerate levels. In this case, there are two types of LRF: the cases of the half-filled and of full-filled in low-lying degenerate levels. The response for the former is delocalized, while that of the later is localized. These behaviors of model systems are discussed in relation to the molecular systems’ counterparts, H₂, He₂²⁺, and He₂ systems. We also see that NEM holds for the dissociated limit of H₂, of which the mechanism is similar to that of the insulating state of solids as suggested by Kohn. We also examined LRF of alanine tripeptide system as well as butane and butadiene molecules, showing that NEM of the polypeptide system is caused by sp₃ junctions at Cα atoms that prevent propagation of amplitudes of LRF, which is critically different from that of NEM for finite and infinite homogeneous systems.

Measuring electric field induced subpicometer displacement of step edge ions

We provide unambiguous evidence that the applied electrostatic field displaces step atoms of ionic crystal surfaces by subpicometers in different directions via the measurement of the lateral force interactions by bimodal dynamic force microscopy combined with multiscale theoretical simulations. Such a small imbalance in the electrostatic interaction of the shifted anion-cation ions leads to an extraordinary long-range feature potential variation and is now detectable with the extreme sensitivity of the bimodal detection.

Negative differential resistance in a hybrid silicon-molecular system: resonance between the intrinsic surface-states and the molecular orbital

It has been a long-term desire to fabricate hybrid silicon-molecular devices by taking advantages of organic molecules and the existing silicon-based technology. However, one of the challenging tasks is to design applicable functions on the basis of the intrinsic properties of the molecules, as well as the silicon substrates. Here we demonstrate a silicon-molecular system that produces negative differential resistance (NDR) by making use of the well-defined intrinsic surface-states of the Si (111)-√3 × √3-Ag (R3-Ag/Si) surface and the molecular orbital of cobalt(II)-phthalocyanine (CoPc) molecules. From our experimental results obtained using scanning tunneling microscopy/spectroscopy, we find that NDR robustly appears at the Co(2+) ion centers of the CoPc molecules, independent of the adsorption configuration of the CoPc molecules and irrespective of doping type and doping concentration of the silicon substrates. Joint with first principle calculations, we conclude that NDR is originated from the resonance between the intrinsic surface-state band S(1) of the R3-Ag/Si surface and the localized unoccupied Co(2+)d(z(2)) orbital of the adsorbed CoPc molecules. We expect that such a mechanism can be generally used in other silicon-molecular systems.

Bistable charge configuration of donor systems near the GaAs(110) surfaces

In gated semiconductor devices, the space charge layer that is located under the gate electrode acts as the functional element. With increasing gate voltage, the microscopic process forming this space charge layer involves the subsequent ionization or electron capture of individual dopants within the semiconductor. In this Letter, a scanning tunneling microscope tip is used as a movable gate above the (110) surface of n-doped GaAs. We study the build-up process of the space charge region considering donors and visualize the charge states of individual and multi donor systems. The charge configuration of single donors is determined by the position of the tip and the applied gate voltage. In contrast, a two donor system with interdonor distances smaller than 10 nm shows a more complex behavior. The electrostatic interaction between the donors in combination with the modification of their electronic properties close to the surface results in ionization gaps and bistable charge switching behavior.

Localized distributions of quasi-two-dimensional electronic states near defects artificially created at graphite surfaces in magnetic fields

We measured the local density of states of a quasi two-dimensional electron system (2DES) near defects, artificially created by Ar-ion sputtering, on surfaces of highly oriented pyrolytic graphite (HOPG) with scanning tunneling spectroscopy (STS) in high magnetic fields. At valley energies of the Landau level spectrum, we found two typical localized distributions of the 2DES depending on the defects. These are new types of distributions which are not observed in the previous STS work at the HOPG surface near a point defect [Y. Niimi, Phys. Rev. Lett. 97, 236804 (2006).10.1103/PhysRevLett.97.236804]. With increasing energy, we observed gradual transformation from the localized distributions to the extended ones as expected for the integer quantum Hall state. We show that the defect potential depth is responsible for the two localized distributions from comparison with theoretical calculations.

Adsorption, manipulation and self-assembling of TBrPP-Co molecules on a Ag/Si(111) surface by scanning tunnelling microscopy

Individual adsorption and two-dimensional assembling of 5,10,15,20-tetrakis-(4-bromophenyl)-porphyrin-Co (TBrPP-Co) molecules on a Si(111)-[Formula: see text] Ag reconstructed surface have been studied using low-temperature scanning tunnelling microscopy (STM). All the isolated molecules are observed in a planar shape with slight distortion. The isolated molecules can be controllably rotated with an STM tip to the orientation along the trigonal lattice ([Formula: see text] direction) of the substrate. With an increased coverage (0.07 ML) and appropriate annealing, the molecules assemble to form three types of ordered phase. The long-range ordered structures, however, disappear at higher coverage (0.75 ML).

Atomically resolved imaging by low-temperature frequency-modulation atomic force microscopy using a quartz length-extension resonator

Low-temperature ultrahigh vacuum frequency-modulation atomic force microscopy (AFM) was performed using a 1 MHz length-extension type of quartz resonator as a force sensor. Taking advantage of the high stiffness of the resonator, the AFM was operated with an oscillation amplitude smaller than 100 pm, which is favorable for high spatial resolution, without snapping an AFM tip onto a sample surface. Atomically resolved imaging of the adatom structure on the Si(111)-(7x7) surface was successfully obtained.

Electron-phonon interaction and localization of surface-state carriers in a metallic monolayer

Temperature-dependent electron transport in a metallic surface superstructure, Si(111)sqrt[3] x sqrt[3]-Ag, was studied by a micro-four-point probe method and photoemission spectroscopy. The surface-state conductivity exhibits a sharp transition from metallic conduction to strong localization at approximately 150 K. The metallic regime is due to electron-phonon interaction while the localization seemingly originates from coherency of electron waves. Random potential variations, caused by Friedel oscillations of surface electrons around defects, likely induce strong carrier localization.

Electronic structure of epitaxial graphene layers on SiC: effect of the substrate

A strong substrate-graphite bond is found in the first all-carbon layer by density functional theory calculations and x-ray diffraction for few graphene layers grown epitaxially on SiC. This first layer is devoid of graphene electronic properties and acts as a buffer layer. The graphene nature of the film is recovered by the second carbon layer grown on both the (0001) and (0001[over]) 4H-SiC surfaces. We also present evidence of a charge transfer that depends on the interface geometry. Hence the graphene is doped and a gap opens at the Dirac point after three Bernal stacked carbon layers are formed.