Subsecond spin relaxation times in quantum dots at zero applied magnetic field due to a strong electron-nuclear interaction

Spin memory effect in charged single telecom quantum dots

Single InP-based quantum dots emitting in the third telecom window are probed quasi-resonantly in polarization-resolved microphotoluminescence experiments. For charged quantum dots we observe negative circular polarization being a fingerprint of the optical spin writing of the carriers within the quantum dots. The investigated quantum dots have a very dense ladder of excited states providing relatively easy quasi-resonant optical excitation, and together with telecom wavelengths emission they bring quantum gates and memories closer to compatibility with fiber-optic communication.

Hyperfine interaction in atomically thin transition metal dichalcogenides

The spin dynamics of localized charge carriers is mainly driven by hyperfine interaction with nuclear spins. Here we develop a theory of hyperfine interaction in transition metal dichalcogenide monolayers. Using group representation theory and the tight binding model we derive effective Hamiltonians of the intervalley hyperfine interaction in the conduction and valence bands. The spin-valley locking and pronounced spin-orbit splitting lead to a specific form of hyperfine interaction, which we call "helical". We also demonstrate that the hyperfine interaction is noncollinear for chalcogen atoms in the general case. At the same time in the upper valence band the hyperfine interaction is purely of the Ising type, which suggests that the spin-valley polarization of localized holes in transition metal dichalcogenide monolayers can be conserved for a particularly long time.

Observation of current-induced, long-lived persistent spin polarization in a topological insulator: A rechargeable spin battery

Topological insulators (TIs), with their helically spin-momentum-locked topological surface states (TSSs), are considered promising for spintronics applications. Several recent experiments in TIs have demonstrated a current-induced electronic spin polarization that may be used for all-electrical spin generation and injection. We report spin potentiometric measurements in TIs that have revealed a long-lived persistent electron spin polarization even at zero current. Unaffected by a small bias current and persisting for several days at low temperature, the spin polarization can be induced and reversed by a large "writing" current applied for an extended time. Although the exact mechanism responsible for the observed long-lived persistent spin polarization remains to be better understood, we speculate on possible roles played by nuclear spins hyperfine-coupled to TSS electrons and dynamically polarized by the spin-helical writing current. Such an electrically controlled persistent spin polarization with unprecedented long lifetime could enable a rechargeable spin battery and rewritable spin memory for potential applications in spintronics and quantum information.

Photonic ququart logic assisted by the cavity-QED system

Universal quantum logic gates are important elements for a quantum computer. In contrast to previous constructions of qubit systems, we investigate the possibility of ququart systems (four-dimensional states) dependent on two DOFs of photon systems. We propose some useful one-parameter four-dimensional quantum transformations for the construction of universal ququart logic gates. The interface between the spin of a photon and an electron spin confined in a quantum dot embedded in a microcavity is applied to build universal ququart logic gates on the photon system with two freedoms. Our elementary controlled-ququart gates cost no more than 8 CNOT gates in a qubit system, which is far less than the 104 CNOT gates required for a general four-qubit logic gate. The ququart logic is also used to generate useful hyperentanglements and hyperentanglement-assisted quantum error-correcting code, which may be available in modern physical technology.

Exciton Fine-Structure Splitting in Self-Assembled Lateral InAs/GaAs Quantum-Dot Molecular Structures

Fine-structure splitting (FSS) of excitons in semiconductor nanostructures is a key parameter that has significant implications in photon entanglement and polarization conversion between electron spins and photons, relevant to quantum information technology and spintronics. Here, we investigate exciton FSS in self-organized lateral InAs/GaAs quantum-dot molecular structures (QMSs) including laterally aligned double quantum dots (DQDs), quantum-dot clusters (QCs), and quantum rings (QRs), by employing polarization-resolved microphotoluminescence (μPL) spectroscopy. We find a clear trend in FSS between the studied QMSs depending on their geometric arrangements, from a large FSS in the DQDs to a smaller FSS in the QCs and QRs. This trend is accompanied by a corresponding difference in the optical polarization directions of the excitons between these QMSs, namely, the bright-exciton lines are linearly polarized preferably along or perpendicular to the [11̅0] crystallographic axis in the DQDs that also defines the alignment direction of the two constituting QDs, whereas in the QCs and QRs, the polarization directions are randomly oriented. We attribute the observed trend in the FSS to a significant reduction of the asymmetry in the lateral confinement potential of the excitons in the QRs and QCs as compared with the DQDs, as a result of a compensation between the effects of lateral shape anisotropy and piezoelectric field. Our work demonstrates that FSS strongly depends on the geometric arrangements of the QMSs, which effectively tune the degree of the compensation effects and are capable of reducing FSS even in a strained QD system to a limit similar to strain-free QDs. This approach provides a pathway in obtaining high-symmetry quantum emitters desirable for realizing photon entanglement and spintronic devices based on such nanostructures, utilizing an uninterrupted epitaxial growth procedure without special requirements for lattice-matched materials combinations, specific substrate orientations, and nanolithography.

Nuclear magnetization in gallium arsenide quantum dots at zero magnetic field

Optical and electrical control of the nuclear spin system allows enhancing the sensitivity of NMR applications and spin-based information storage and processing. Dynamic nuclear polarization in semiconductors is commonly achieved in the presence of a stabilizing external magnetic field. Here we report efficient optical pumping of nuclear spins at zero magnetic field in strain-free GaAs quantum dots. The strong interaction of a single, optically injected electron spin with the nuclear spins acts as a stabilizing, effective magnetic field (Knight field) on the nuclei. We optically tune the Knight field amplitude and direction. In combination with a small transverse magnetic field, we are able to control the longitudinal and transverse components of the nuclear spin polarization in the absence of lattice strain--that is, in dots with strongly reduced static nuclear quadrupole effects, as reproduced by our model calculations.

Nuclear spin effects in semiconductor quantum dots

The interaction of an electronic spin with its nuclear environment, an issue known as the central spin problem, has been the subject of considerable attention due to its relevance for spin-based quantum computation using semiconductor quantum dots. Independent control of the nuclear spin bath using nuclear magnetic resonance techniques and dynamic nuclear polarization using the central spin itself offer unique possibilities for manipulating the nuclear bath with significant consequences for the coherence and controlled manipulation of the central spin. Here we review some of the recent optical and transport experiments that have explored this central spin problem using semiconductor quantum dots. We focus on the interaction between 10(4)-10(6) nuclear spins and a spin of a single electron or valence-band hole. We also review the experimental techniques as well as the key theoretical ideas and the implications for quantum information science.

CNOT and Bell-state analysis in the weak-coupling cavity QED regime

We propose an interface between the spin of a photon and the spin of an electron confined in a quantum dot embedded in a microcavity operating in the weak-coupling regime. This interface, based on spin selective photon reflection from the cavity, can be used to construct a CNOT gate, a multiphoton entangler and a photonic Bell-state analyzer. Finally, we analyze experimental feasibility, concluding that the schemes can be implemented with current technology.

Controlling the polarization eigenstate of a quantum dot exciton with light

We demonstrate optical control of the polarization eigenstates of a neutral quantum dot exciton without any external fields. By varying the excitation power of a circularly polarized laser in microphotoluminescence experiments on individual InGaAs quantum dots we control the magnitude and direction of an effective internal magnetic field created via optical pumping of nuclear spins. The adjustable nuclear magnetic field allows us to tune the linear and circular polarization degree of the neutral exciton emission. The quantum dot can thus act as a tunable light polarization converter.

Stabilization of the electron-nuclear spin orientation in quantum dots by the nuclear quadrupole interaction

The nuclear quadrupole interaction eliminates the restrictions imposed by hyperfine interaction on the spin coherence of an electron and nuclei in a quantum dot. The strain-induced nuclear quadrupole interaction suppresses the nuclear spin flip and makes possible the zero-field dynamic nuclear polarization in self-organized InP/InGaP quantum dots. The direction of the effective nuclear magnetic field is fixed in space, thus quenching the magnetic depolarization of the electron spin in the quantum dot. The quadrupole interaction suppresses the zero-field electron spin decoherence also for the case of nonpolarized nuclei. These results provide a new vision of the role of the nuclear quadrupole interaction in nanostructures: it elongates the spin memory of the electron-nuclear system.