Changing exchange bias in spin valves with an electric current

Tuning In-Plane Magnetic Anisotropy and Interfacial Exchange Coupling in Epitaxial La2/3Sr1/3CoO3/La2/3Sr1/3MnO3 Heterostructures

Controlling the in-plane magnetocrystalline anisotropy and interfacial exchange coupling between ferromagnetic (FM) layers plays a key role in next-generation spintronic and magnetic memory devices. In this work, we explored the effect of tuning the magnetocrystalline anisotropy of La2/3Sr1/3CoO3 (LSCO) and La2/3Sr1/3MnO3 (LSMO) layers and the corresponding effect on interfacial exchange coupling by adjusting the thickness of the LSCO layer (tLSCO). The epitaxial LSCO/LSMO bilayers were grown on (110)o-oriented NdGaO3 (NGO) substrates with a fixed LSMO (top layer) thickness of 6 nm and LSCO (bottom layer) thicknesses varying from 1 to 10 nm. Despite the small difference (∼0.2%) in lattice mismatch between the two in-plane directions, [001]o and [11̅0]o, a pronounced in-plane magnetic anisotropy was observed. Soft X-ray magnetic circular dichroism hysteresis loops revealed that for tLSCO ≤ 4 nm, the easy axes for both LSCO and LSMO layers were along the [001]o direction, and the LSCO layer was characterized by magnetically active Co2+ ions that strongly coupled to the LSMO layer. No exchange bias effect was observed in the hysteresis loops. In contrast, along the [11̅0]o direction, the LSCO and LSMO layers displayed a small difference in their coercivity values, and a small exchange bias shift was observed. As tLSCO increased above 4 nm, the easy axis for the LSCO layer remained along the [100]o direction, but it gradually rotated to the [11̅0]o direction for the LSMO layer, resulting in a large negative exchange bias shift. Therefore, we provide a way to control the magnetocrystalline anisotropy and exchange bias by tuning the interfacial exchange coupling between the two FM layers.

High-frequency spin torque oscillation in orthogonal magnetization disks with strong biquadratic magnetic coupling

In this study, we numerically investigate the spin transfer torque oscillation (STO) in a magnetic orthogonal configuration by introducing a strong biquadratic magnetic coupling. The orthogonal configuration consists of top and bottom layers with in-plane and perpendicular magnetic anisotropy sandwiching a nonmagnetic spacer. The advantage of an orthogonal configuration is the high efficiency of spin transfer torque leading a high STO frequency; however, maintaining the STO in a wide range of electric current is challenging. By introducing biquadratic magnetic coupling into the orthogonal structure of FePt/spacer/Co₉₀Fe₁₀, Ni₈₀Fe₂₀ or Ni, we were able to expand the electric current region in which the stable STO is realized, resulting in a relatively high STO frequency. For example, approximately 50 GHz can be achieved in an Ni layer at a current density of 5.5 × 10⁷ A/cm². In addition, we investigated two types of initial magnetic state: out-of-plane and in-plane magnetic saturation; this leads to a vortex and an in-plane magnetic domain structure after relaxation, respectively. The transient time before the stable STO was reduced to between 0.5 and 1.8 ns by changing the initial state from out-of-plane to in-plane.

Tuning the Exchange Bias Effect in 2D van der Waals Ferro-/Antiferromagnetic Fe3 GeTe2 /CrOCl Heterostructures

The exchange bias effect is extremely expected in 2D van der Waals (vdW) ferromagnetic (FM)/antiferromagnetic (AFM) heterostructures due to the high-quality interface. CrOCl possesses strong magnetic anisotropy at 2D limit, and is an ideal antiferromagnet for constructing FM/AFM heterostructures to explore the exchange bias effect. Here, the exchange bias effect in Fe₃ GeTe₂ (FGT)/CrOCl heterostructures through both anomalous Hall effect (AHE) and reflective magnetic circular dichroism (RMCD) measurements is studied. In the AHE measurements, the exchange bias field (H_EB ) at 3 K exhibits a distinct increase from ≈150 Oe to ≈450 Oe after air exposure, and such variation is attributed to the formation of an oxidized layer in FGT by analyzing the cross-sectional microstructure. The H_EB is successfully tuned by changing the FGT/CrOCl thickness and the cooling field. Furthermore, a larger H_EB of ≈750 Oe at 1.7 K in FGT/CrOCl heterostructure through RMCD measurements is observed, and it is proposed that the larger H_EB in RMCD measurements is related to the distribution of uncompensated spins at the interface. This work reveals several intriguing phenomena of the exchange bias effect in 2D vdW magnetic systems, which paves the way for the study of related spintronic devices.

Significant Surface Spin Effects and Exchange Bias in Iron Oxide-Based Hollow Magnetic Nanoparticles

Exchange bias (EB) properties have become especially important in hollow magnetic nanoparticles (MNPs) due to the versatility and reduced size of these materials. In this work, we present the synthesis and study of the EB properties of iron-oxide-based hollow MNPs and their precursors Fe/iron oxide MNPs with core/void/shell structure. The two mechanisms involved in EB generation were investigated: the frozen spins present in the nanograins that form the nanoparticles and the surface spins. The effect of external parameters on the coercivity (H_C), remanence (M_R), exchange bias field (H_EB) and frozen spins, such as cooling field (H_FC) and temperature, was investigated. Both H_C and H_EB present a maximum threshold above which their values begin to decrease with H_FC, showing a new trend of H_EB with H_FC and allowing modulation on demand. The existence of surface spins, present on the outer and inner surfaces, was demonstrated, and an intrinsic EB phenomenon (H_EB = 444 Oe for hollow iron oxide-based MNPs of 13.1 nm) with significant magnetization (M_S~50 emu/g) was obtained. Finally, core/void/shell MNPs of 11.9 nm prior to the formation of the hollow MNPs showed a similar behavior, with non-negligible H_EB, highlighting the importance of surface spins in EB generation.

Double-Exchange Bias Modulation under Horizontal and Perpendicular Field Directions by 3D Nanocomposite Design

Exchange bias (EB) presents the interfacial coupling between ferromagnetic (FM) and antiferromagnetic (AFM) phases, which could be applied for high-density data storage and magnetic recording. In thin films, the EB effect could be realized in either a FM/AFM multilayer structure or a FM/AFM vertically aligned nanocomposite (VAN) form, which allows the interfacial coupling tuning along the horizontal or perpendicular directions, respectively. Here, to combine the schemes of multilayer and VAN structures, a new 3D nanocomposite has been designed, which is La_0.7Sr_0.3MnO₃ (LSMO)/NiO VAN layers with inserted LSMO or NiO layers. Such a 3D nanocomposite structure provides a great platform to tailor the EB effect along both horizontal and perpendicular directions. Specifically, the sample with a NiO interlayer exhibits the highest EB field (H_EB) of 350 Oe and 475 Oe under in-plane and out-of-plane field, respectively. Furthermore, the H_EB value and Curie temperature (T_c) can be tuned by different 3D nanostructures. This work demonstrates the double EB modulation with the designed 3D nanostructures as a new route toward advanced magnetic data storage and spintronic devices.

Strong Interfacial Coupling of Tunable Ni-NiO Nanocomposite Thin Films Formed by Self-Decomposition

The next-generation spintronic devices including memristors, tunneling devices, or stochastic switching exert surging demands on magnetic nanostructures with novel coupling schemes. Taking advantage of a phase decomposition mechanism, a unique Ni-NiO nanocomposite has been demonstrated using a conventional pulsed laser deposition technique. Ni nanodomains are segregated from NiO and exhibit as faceted "emerald-cut" morphologies with tunable dimensions affected by the growth temperature. The sharp interfacial transition between ferromagnetic (002) Ni and antiferromagnetic (002) NiO, as characterized by high-resolution transmission electron microscopy, introduces a strong exchange bias effect and magneto-optical coupling at room temperature. In situ heating-cooling X-ray diffraction (XRD) study confirms an irreversible phase transformation between Ni and NiO under ambient atmosphere. Synthesizing highly functional two-phase nanocomposites with a simple bottom-up self-assembly via such a phase decomposition mechanism presents advantages in terms of epitaxial quality, surface coverage, interfacial coupling, and tunable nanomagnetism, which are valuable for new spintronic device implementation.

Current-Induced Spin-Orbit Torques for Spintronic Applications

Control of magnetization in magnetic nanostructures is essential for development of spintronic devices because it governs fundamental device characteristics such as energy consumption, areal density, and operation speed. In this respect, spin-orbit torque (SOT), which originates from the spin-orbit interaction, has been widely investigated due to its efficient manipulation of the magnetization using in-plane current. SOT spearheads novel spintronic applications including high-speed magnetic memories, reconfigurable logics, and neuromorphic computing. Herein, recent advances in SOT research, highlighting the considerable benefits and challenges of SOT-based spintronic devices, are reviewed. First, the materials and structural engineering that enhances SOT efficiency are discussed. Then major experimental results for field-free SOT switching of perpendicular magnetization are summarized, which includes the introduction of an internal effective magnetic field and the generation of a distinct spin current with out-of-plane spin polarization. Finally, advanced SOT functionalities are presented, focusing on the demonstration of reconfigurable and complementary operation in spin logic devices.

Long spin coherence length and bulk-like spin-orbit torque in ferrimagnetic multilayers

Spintronics relies on magnetization switching through current-induced spin torques. However, because spin transfer torque for ferromagnets is a surface torque, a large switching current is required for a thick, thermally stable ferromagnetic cell, and this remains a fundamental obstacle for high-density non-volatile applications with ferromagnets. Here, we report a long spin coherence length and associated bulk-like torque characteristics in an antiferromagnetically coupled ferrimagnetic multilayer. We find that a transverse spin current can pass through >10-nm-thick ferrimagnetic Co/Tb multilayers, whereas it is entirely absorbed by a 1-nm-thick ferromagnetic Co/Ni multilayer. We also find that the switching efficiency of Co/Tb multilayers partially reflects a bulk-like torque characteristic, as it increases with ferrimagnet thickness up to 8 nm and then decreases, in clear contrast to the 1/thickness dependence of ferromagnetic Co/Ni multilayers. Our results on antiferromagnetically coupled systems will invigorate research towards the development of energy-efficient spintronics.

Spin torque control of antiferromagnetic moments in NiO

For a long time, there were no efficient ways of controlling antiferromagnets. Quite a strong magnetic field was required to manipulate the magnetic moments because of a high molecular field and a small magnetic susceptibility. It was also difficult to detect the orientation of the magnetic moments since the net magnetic moment is effectively zero. For these reasons, research on antiferromagnets has not been progressed as drastically as that on ferromagnets which are the main materials in modern spintronic devices. Here we show that the magnetic moments in NiO, a typical natural antiferromagnet, can indeed be controlled by the spin torque with a relatively small electric current density (~4 × 10⁷ A/cm²) and their orientation is detected by the transverse resistance resulting from the spin Hall magnetoresistance. The demonstrated techniques of controlling and detecting antiferromagnets would outstandingly promote the methodologies in the recently emerged “antiferromagnetic spintronics”. Furthermore, our results essentially lead to a spin torque antiferromagnetic memory.

Magnetic Moment Orientation-Dependent Spin Dissipation in Antiferromagnets

Spin interaction in antiferromagnetic materials is of central interest in the recently emerging antiferromagnetic spintronics. In this Letter, we explore the spin current interaction in antiferromagnetic FeMn by the spin pumping effect. Exchange biased FeNi/FeMn films, in which the Néel vector can be presumably controlled via the exchange spring effect, are employed to investigate the damping enhancement depending on the relative orientation between the Néel vector and the polarization of the pumped spin current. The correlation between the enhanced damping and the strength of the exchange bias suggests that the twisting of the Néel vector induces an additional spin dissipation, which verifies that the Slonczewski-type spin torque is effective even in antiferromagnetic materials.

Magnetism of the hypo-oxide state at the diffuse interface between the ferromagnet and antiferromagnet phases

At the interface between ferromagnetic and antiferromagnetic phases, various spin configurations with a higher degrees of complexity than in the bulk states can be derived due to the diverse possible interface atomic structures, where coupling interactions among the constituting atoms can form in consistence with altered atomic configurations. The interface magnetic properties then depend on the collective behavior of such spin structures. In the present work, an extended interfacial configuration of a hypo-oxide state was prepared by establishing the gradient of oxygen concentration across the spatially diffuse interface region between ferromagnetic metallic and antiferromagnetic oxide phases at the nanometer scale. With these mixed ferromagnetic and antiferromagnetic couplings among the atoms in the interfacial hypo- or sub-oxide state, novel magnetic behavior can be induced. We report here, for the first time, a significant increase of saturation magnetization with temperature over a broad temperature range, which is against the conventional expectation for any generally known magnetic materials. And the unusual temperature dependent behavior can be understood as the combined effects of competing ferromagnetic and antiferromagnetic couplings acting on atoms in and near the interface region.

Spin diffusion and torques in disordered antiferromagnets

We have developed a drift-diffusion equation of spin transport in collinear bipartite metallic antiferromagnets. Starting from a model tight-binding Hamiltonian, we obtain the quantum kinetic equation within Keldysh formalism and expand it to the lowest order in spatial gradient using Wigner expansion method. In the diffusive limit, these equations track the spatio-temporal evolution of the spin accumulations and spin currents on each sublattice of the antiferromagnet. We use these equations to address the nature of the spin transfer torque in (i) a spin-valve composed of a ferromagnet and an antiferromagnet, (ii) a metallic bilayer consisting of an antiferromagnet adjacent to a heavy metal possessing spin Hall effect, and in (iii) a single antiferromagnet possessing spin Hall effect. We show that the latter can experience a self-torque thanks to the non-vanishing spin Hall effect in the antiferromagnet.

Field-free switching of perpendicular magnetization through spin-orbit torque in antiferromagnet/ferromagnet/oxide structures

Spin-orbit torques arising from the spin-orbit coupling of non-magnetic heavy metals allow electrical switching of perpendicular magnetization. However, the switching is not purely electrical in laterally homogeneous structures. An extra in-plane magnetic field is indeed required to achieve deterministic switching, and this is detrimental for device applications. On the other hand, if antiferromagnets can generate spin-orbit torques, they may enable all-electrical deterministic switching because the desired magnetic field may be replaced by their exchange bias. Here we report sizeable spin-orbit torques in IrMn/CoFeB/MgO structures. The antiferromagnetic IrMn layer also supplies an in-plane exchange bias field, which enables all-electrical deterministic switching of perpendicular magnetization without any assistance from an external magnetic field. Together with sizeable spin-orbit torques, these features make antiferromagnets a promising candidate for future spintronic devices. We also show that the signs of the spin-orbit torques in various IrMn-based structures cannot be explained by existing theories and thus significant theoretical progress is required.

Antiferromagnetic Domain Wall Motion Driven by Spin-Orbit Torques

We theoretically investigate the dynamics of antiferromagnetic domain walls driven by spin-orbit torques in antiferromagnet-heavy-metal bilayers. We show that spin-orbit torques drive antiferromagnetic domain walls much faster than ferromagnetic domain walls. As the domain wall velocity approaches the maximum spin-wave group velocity, the domain wall undergoes Lorentz contraction and emits spin waves in the terahertz frequency range. The interplay between spin-orbit torques and the relativistic dynamics of antiferromagnetic domain walls leads to the efficient manipulation of antiferromagnetic spin textures and paves the way for the generation of high frequency signals from antiferromagnets.

Antiferromagnetic spintronics

Antiferromagnetic materials are internally magnetic, but the direction of their ordered microscopic moments alternates between individual atomic sites. The resulting zero net magnetic moment makes magnetism in antiferromagnets externally invisible. This implies that information stored in antiferromagnetic moments would be invisible to common magnetic probes, insensitive to disturbing magnetic fields, and the antiferromagnetic element would not magnetically affect its neighbours, regardless of how densely the elements are arranged in the device. The intrinsic high frequencies of antiferromagnetic dynamics represent another property that makes antiferromagnets distinct from ferromagnets. Among the outstanding questions is how to manipulate and detect the magnetic state of an antiferromagnet efficiently. In this Review we focus on recent works that have addressed this question. The field of antiferromagnetic spintronics can also be viewed from the general perspectives of spin transport, magnetic textures and dynamics, and materials research. We briefly mention this broader context, together with an outlook of future research and applications of antiferromagnetic spintronics.

Electrical control of the exchange spring in antiferromagnetic metals

Electrical control of the exchange spring in antiferromagnetic metals is obtained in [Co/Pt]/IrMn Hall devices by using an ionic liquid, where the exchange spring could transfer the "force" and enable a deeper modulation depth in the IrMn. This work provides a new approach toward electrical modulation of the spin structures in metallic antiferromagnets, which should be significant in advancing the development of low-power-consumption antiferromagnet (AFM) spintronics.

Spin pumping and spin-transfer torques in antiferromagnets

Spin pumping and spin-transfer torques are two reciprocal phenomena widely studied in ferromagnetic materials. However, pumping from antiferromagnets and its relation to current-induced torques have not been explored. By calculating how electrons scatter off a normal metal-antiferromagnetic interface, we derive pumped spin and staggered spin currents in terms of the staggered field, the magnetization, and their rates of change. For both compensated and uncompensated interfaces, spin pumping is of a similar magnitude as in ferromagnets with a direction controlled by the polarization of the driving microwave. The pumped currents are connected to current-induced torques via Onsager reciprocity relations.

Antiferromagnetic domain wall motion induced by spin waves

Spin waves in antiferromagnets are linearly or circularly polarized. Depending on the polarization, traversing spin waves alter the staggered field in a qualitatively different way. We calculate the drift velocity of a moving domain wall as a result of spin wave-mediated forces and show that the domain wall moves in opposite directions for linearly and circularly polarized waves. The analytical results agree with micromagnetic simulations of an antiferromagnetic domain wall driven by a localized, alternating magnetic field.

Staggered dynamics in antiferromagnets by collective coordinates

Antiferromagnets can be used to store and manipulate spin information, but the coupled dynamics of the staggered field and the magnetization are very complex. We present a theory which is conceptually much simpler and which uses collective coordinates to describe staggered field dynamics in antiferromagnetic textures. The theory includes effects from dissipation, external magnetic fields, as well as reactive and dissipative current-induced torques. We conclude that, at low frequencies and amplitudes, currents induce collective motion by means of dissipative rather than reactive torques. The dynamics of a one-dimensional domain wall, pinned at 90° at its ends, are described as a driven harmonic oscillator with a natural frequency inversely proportional to the length of the texture.

Influence of a transport current on a domain wall in an antiferromagnetic metal

We consider the influence of an electric current on the position of a domain wall in an antiferromagnetic metal. We first microscopically derive an equation of motion for the Néel vector in the presence of current by performing, in the transport steady state, a linear-response calculation in the deviation from collinearity of the antiferromagnet. This equation of motion is then solved variationally for an antiferromagnetic domain wall. We find that, in the absence of dissipative or non-adiabatic coupling between magnetization and current, the current displaces the domain wall by a finite amount and that the domain wall is then intrinsically pinned by the exchange interactions. In the presence of dissipative or non-adiabatic current-to-domain-wall coupling, the domain wall velocity is proportional to the current and is no longer pinned.

Antiferromagnetic metal spintronics

In this brief review, we explain the theoretical basis for the notion that spin-transfer torques (STTs) and giant-magnetoresistance effects can, in principle, occur in circuits containing only normal and antiferromagnetic (AFM) materials, and for the notion that antiferromagnets can play a role in STT phenomena in circuits containing both ferromagnetic and AFM elements. We review the experimental literature that provides partial evidence for these AFM spintronic effects but demonstrates that, like exchange-bias effects, they are sensitive to details of interface structure that are not always under experimental control. Finally, we speculate briefly on some strategies that might advance progress.

Uniaxial spin-transfer torque in an exchange-biased spin valve

We study the effects of uniaxial spin-transfer torque (USTT) on the ferromagnetic (F) as well as antiferromagnetic (AF) layers in an exchange-biased (EB) spin valve. By analytically treating the free-energy functional of the F/AF bilayer and numerically solving the Landau-Lifshitz-Gilbert equation for magnetic moments, we can reproduce and explain two existing experimental facts relevant to USTT: one is that the EB field can be reversed by both positive and negative pulsed currents, and the other is that the critical current to excite the F moments is greatly increased in the presence of an AF layer and independent of external fields. We also derive the angular dependence of the critical currents to excite AF and F moments, which suggests a possible way to quantitatively determine USTT in experiments.

Perpendicular spin torques in magnetic tunnel junctions

We quantitatively determine a perpendicular spin torque in magnetic tunnel junctions by measuring the room-temperature critical switching current at various magnetic fields and current pulse widths. We find that the magnitude of the torque is proportional to the product of the current density and the bias voltage, and the direction of the torque reverses as the polarity of the voltage changes. By taking into account the energy-dependent inelastic scattering of tunnel electrons, we formulate the bias dependence of the perpendicular spin torque which is in qualitative agreement with the experimental results.

Spin-transfer torques in antiferromagnetic metals from first principles

In spite of the absence of a macroscopic magnetic moment, an antiferromagnet is spin-polarized on an atomic scale. The electric current passing through a conducting antiferromagnet is polarized as well, leading to spin-transfer torques when the order parameter is textured, such as in antiferromagnetic noncollinear spin valves and domain walls. We report a first principles study on the electronic transport properties of antiferromagnetic systems. The current-induced spin torques acting on the magnetic moments are comparable with those in conventional ferromagnetic materials, leading to measurable angular resistances and current-induced magnetization dynamics. In contrast to ferromagnets, spin torques in antiferromagnets are very nonlocal. The torques acting far away from the center of an antiferromagnetic domain wall should facilitate current-induced domain wall motion.

Current-induced torques due to compensated antiferromagnets

We analyze the influence of current-induced torques on the magnetization configuration of a ferromagnet in a circuit containing a compensated antiferromagnet. We argue that these torques are generically nonzero and determine their form by considering spin-dependent scattering at a compensated antiferromagnetic interface. Because of symmetry dictated differences in the form of the current-induced torque, the phase diagram which expresses the dependence of the ferromagnetic configuration on the current and external magnetic field differs qualitatively from its ferromagnet-only counterpart.

Effect of polarized current on the magnetic state of an antiferromagnet

We provide evidence for the effects of spin polarized current on a nanofabricated antiferromagnet incorporated into a spin-valve structure. The signatures of the current-induced effects include bipolar steps in differential resistance, current-induced changes of exchange bias correlated with these steps, and deviations from the statistics expected for thermally activated switching of spin valves. We explain our observations by a combination of spin torque exerted on the interfacial antiferromagnetic moments and electron-magnon scattering in an antiferromagnet.