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Bonagiri A, Biswas D, Chakravarthy S. Coupled Memristor Oscillators for Neuromorphic Locomotion Control: Modeling and Analysis. IEEE TRANSACTIONS ON NEURAL NETWORKS AND LEARNING SYSTEMS 2024; 35:8638-8652. [PMID: 37018567 DOI: 10.1109/tnnls.2022.3231298] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
The recent surge of interest in brain-inspired architectures along with the development of nonlinear dynamical electronic devices and circuits has enabled energy-efficient hardware realizations of several important neurobiological systems and features. Central pattern generator (CPG) is one such neural system underlying the control of various rhythmic motor behaviors in animals. A CPG can produce spontaneous coordinated rhythmic output signals without any feedback mechanism, ideally realizable by a system of coupled oscillators. Bio-inspired robotics aims to use this approach to control the limb movement for synchronized locomotion. Hence, devising a compact and energy-efficient hardware platform to implement neuromorphic CPGs would be of great benefit for bio-inspired robotics. In this work, we demonstrate that four capacitively coupled vanadium dioxide (VO2) memristor-based oscillators can produce spatiotemporal patterns corresponding to the primary quadruped gaits. The phase relationships underlying the gait patterns are governed by four tunable bias voltages (or four coupling strengths) making the network programmable, reducing the complex problem of gait selection and dynamic interleg coordination to the choice of four control parameters. To this end, we first introduce a dynamical model for the VO2 memristive nanodevice, then perform analytical and bifurcation analysis of a single oscillator, and finally demonstrate the dynamics of coupled oscillators through extensive numerical simulations. We also show that adopting the presented model for a VO2 memristor reveals a striking resemblance between VO2 memristor oscillators and conductance-based biological neuron models such as the Morris-Lecar (ML) model. This can inspire and guide further research on implementation of neuromorphic memristor circuits that emulate neurobiological phenomena.
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Liu H, Qin Y, Chen HY, Wu J, Ma J, Du Z, Wang N, Zou J, Lin S, Zhang X, Zhang Y, Wang H. Artificial Neuronal Devices Based on Emerging Materials: Neuronal Dynamics and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205047. [PMID: 36609920 DOI: 10.1002/adma.202205047] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/03/2022] [Revised: 12/02/2022] [Indexed: 06/17/2023]
Abstract
Artificial neuronal devices are critical building blocks of neuromorphic computing systems and currently the subject of intense research motivated by application needs from new computing technology and more realistic brain emulation. Researchers have proposed a range of device concepts that can mimic neuronal dynamics and functions. Although the switching physics and device structures of these artificial neurons are largely different, their behaviors can be described by several neuron models in a more unified manner. In this paper, the reports of artificial neuronal devices based on emerging volatile switching materials are reviewed from the perspective of the demonstrated neuron models, with a focus on the neuronal functions implemented in these devices and the exploitation of these functions for computational and sensing applications. Furthermore, the neuroscience inspirations and engineering methods to enrich the neuronal dynamics that remain to be implemented in artificial neuronal devices and networks toward realizing the full functionalities of biological neurons are discussed.
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Affiliation(s)
- Hefei Liu
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA
| | - Yuan Qin
- Center for Power Electronics Systems, Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, 24060, USA
| | - Hung-Yu Chen
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA
| | - Jiangbin Wu
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA
| | - Jiahui Ma
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA
| | - Zhonghao Du
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA
| | - Nan Wang
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA
| | - Jingyi Zou
- Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213, USA
| | - Sen Lin
- Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213, USA
| | - Xu Zhang
- Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213, USA
| | - Yuhao Zhang
- Center for Power Electronics Systems, Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, 24060, USA
| | - Han Wang
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA
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Abernot M, Azemard N, Todri-Sanial A. Oscillatory neural network learning for pattern recognition: an on-chip learning perspective and implementation. Front Neurosci 2023; 17:1196796. [PMID: 37397448 PMCID: PMC10308018 DOI: 10.3389/fnins.2023.1196796] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/30/2023] [Accepted: 05/29/2023] [Indexed: 07/04/2023] Open
Abstract
In the human brain, learning is continuous, while currently in AI, learning algorithms are pre-trained, making the model non-evolutive and predetermined. However, even in AI models, environment and input data change over time. Thus, there is a need to study continual learning algorithms. In particular, there is a need to investigate how to implement such continual learning algorithms on-chip. In this work, we focus on Oscillatory Neural Networks (ONNs), a neuromorphic computing paradigm performing auto-associative memory tasks, like Hopfield Neural Networks (HNNs). We study the adaptability of the HNN unsupervised learning rules to on-chip learning with ONN. In addition, we propose a first solution to implement unsupervised on-chip learning using a digital ONN design. We show that the architecture enables efficient ONN on-chip learning with Hebbian and Storkey learning rules in hundreds of microseconds for networks with up to 35 fully-connected digital oscillators.
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Affiliation(s)
- Madeleine Abernot
- Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Department of Microelectroncis, University of Montpellier, CNRS, Montpellier, France
| | - Nadine Azemard
- Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Department of Microelectroncis, University of Montpellier, CNRS, Montpellier, France
| | - Aida Todri-Sanial
- Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Department of Microelectroncis, University of Montpellier, CNRS, Montpellier, France
- Electrical Engineering Department, Eindhoven University of Technology, Eindhoven, Netherlands
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Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications. Sci Rep 2022; 12:19377. [PMID: 36371590 PMCID: PMC9653463 DOI: 10.1038/s41598-022-23629-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/16/2022] [Accepted: 11/02/2022] [Indexed: 11/13/2022] Open
Abstract
Volatile memristors are versatile devices whose operating mechanism is based on an abrupt and volatile change of resistivity. This switching between high and low resistance states is at the base of cutting edge technological implementations such as neural/synaptic devices or random number generators. A detailed understanding of this operating mechanisms is essential prerequisite to exploit the full potentiality of volatile memristors. In this respect, multi-physics device simulations provide a powerful tool to single out material properties and device features that are the keys to achieve desired behaviors. In this paper, we perform 3D electrothermal simulations of volatile memristors based on vanadium dioxide (VO[Formula: see text]) to accurately investigate the interplay among Joule effect, heat dissipation and the external temperature [Formula: see text] over their resistive switching mechanism. In particular, we extract from our simulations a simplified model for the effect of [Formula: see text] over the negative differential resistance (NDR) region of such devices. The NDR of VO[Formula: see text] devices is pivotal for building VO[Formula: see text] oscillators, which have been recently shown to be essential elements of oscillatory neural networks (ONNs). ONNs are innovative neuromorphic circuits that harness oscillators' phases to compute. Our simulations quantify the impact of [Formula: see text] over figures of merit of VO[Formula: see text] oscillator, such as frequency, voltage amplitude and average power per cycle. Our findings shed light over the interlinked thermal and electrical behavior of VO[Formula: see text] volatile memristors and oscillators, and provide a roadmap for the development of ONN technology.
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Delacour C, Todri-Sanial A. Mapping Hebbian Learning Rules to Coupling Resistances for Oscillatory Neural Networks. Front Neurosci 2021; 15:694549. [PMID: 34819831 PMCID: PMC8606813 DOI: 10.3389/fnins.2021.694549] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/13/2021] [Accepted: 10/14/2021] [Indexed: 11/25/2022] Open
Abstract
Oscillatory Neural Network (ONN) is an emerging neuromorphic architecture with oscillators representing neurons and information encoded in oscillator's phase relations. In an ONN, oscillators are coupled with electrical elements to define the network's weights and achieve massive parallel computation. As the weights preserve the network functionality, mapping weights to coupling elements plays a crucial role in ONN performance. In this work, we investigate relaxation oscillators based on VO2 material, and we propose a methodology to map Hebbian coefficients to ONN coupling resistances, allowing a large-scale ONN design. We develop an analytical framework to map weight coefficients into coupling resistor values to analyze ONN architecture performance. We report on an ONN with 60 fully-connected oscillators that perform pattern recognition as a Hopfield Neural Network.
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Affiliation(s)
- Corentin Delacour
- Laboratoire d'Informatique, de Robotique et de Microélectronique de Montpellier, Département de Microélectronique, Université de Montpellier, CNRS, Montpellier, France
| | - Aida Todri-Sanial
- Laboratoire d'Informatique, de Robotique et de Microélectronique de Montpellier, Département de Microélectronique, Université de Montpellier, CNRS, Montpellier, France
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