Stability of Nanometer-Thick Layered Gallium Chalcogenides and Improvements via Hydrogen Passivation

The gallium monochalcogenides family, comprising gallium sulfide (GaS), gallium selenide (GaSe), and gallium telluride (GaTe), is capturing attention for its applications in energy storage and production, catalysis, photonics, and optoelectronics. This interest originates from their properties, which include an optical bandgap larger than those of most common transition metal dichalcogenides, efficient light absorption, and significant carrier mobility. For any application, stability to air exposure is a fundamental requirement. Here, we perform a comparative study of the stability of layered GaS, GaSe, and GaTe nanometer-thick films down to a few layers with the goal of identifying the most suitable Ga chalcogenide for future integration in photonic and optoelectronic devices. Our study unveils a trend of decreasing air stability from sulfide to selenide and finally to telluride. Furthermore, we demonstrate a hydrogen passivation process to prevent the oxidation of GaSe with a higher feasibility and durability than other state-of-the-art passivation methods proposed in the literature.

Looking Outside the Square: The Growth, Structure, and Resilient Two-Dimensional Surface Electron Gas of Square SnO2 Nanotubes

Nanotechnology has delivered an amazing range of new materials such as nanowires, tubes, ribbons, belts, cages, flowers, and sheets. However, these are usually circular, cylindrical, or hexagonal in nature, while nanostructures with square geometries are comparatively rare. Here, a highly scalable method is reported for producing vertically aligned Sb-doped SnO₂ nanotubes with perfectly-square geometries on Au nanoparticle covered m-plane sapphire using mist chemical vapor deposition. Their inclination can be varied using r- and a-plane sapphire, while unaligned square nanotubes of the same high structural quality can be grown on silicon and quartz. X-ray diffraction measurements and transmission electron microscopy show that they adopt the rutile structure growing in the [001] direction with (110) sidewalls, while synchrotron X-ray photoelectron spectroscopy reveals the presence of an unusually strong and thermally resilient 2D surface electron gas. This is created by donor-like states produced by the hydroxylation of the surface and is sustained at temperatures above 400 °C by the formation of in-plane oxygen vacancies. This persistent high surface electron density is expected to prove useful in gas sensing and catalytic applications of these remarkable structures. To illustrate their device potential, square SnO₂ nanotube Schottky diodes and field effect transistors with excellent performance characteristics are fabricated.

Separating the Effects of Band Bending and Covalency in Hybrid Perovskite Oxide Electrocatalyst Bilayers for Water Electrolysis

The Co-O covalency in perovskite oxide cobaltites such as La_1-xSr_xCoO₃ is believed to impact the electrocatalytic activity during electrochemical water splitting at the anode where the oxygen evolution reaction (OER) takes place. Additionally, space charge layers through band bending at the interface to the electrolyte may affect the electron transfer into the electrode, complicating the analysis and identification of true OER activity descriptors. Here, we separate the influence of covalency and band bending in hybrid epitaxial bilayer structures of highly OER-active La_0.6Sr_0.4CoO₃ and undoped and less-active LaCoO₃. Ultrathin LaCoO₃ capping layers of 2-8 unit cells on La_0.6Sr_0.4CoO₃ show intermediate OER activity between La_0.6Sr_0.4CoO₃ and LaCoO₃ evidently caused by the increased surface Co-O covalency compared to single LaCoO₃ as detected by X-ray photoelectron spectroscopy. A Mott-Schottkyanalysis revealed low flat band potentials for different LaCoO₃ capping layer thicknesses, indicating that no limiting extended space charge layer exists under OER conditions as all catalyst bilayer films exhibited hole accumulation at the surface. The combined X-ray photoelectron spectroscopy and Mott-Schottky analysis thus enables us to differentiate between the influence of the covalency and intrinsic space charge layers, which are indistinguishable in a single physical or electrochemical characterization. Our results emphasize the prominent role of transition metal oxygen covalency in perovskite electrocatalysts and introduce a bilayer approach to fine-tune the surface electronic structure.

Highly Conductive and Visibly Transparent p-Type CuCrO2 Films by Ultrasonic Spray Pyrolysis

The development of high-performing p-type transparent conducting oxides will enable immense progress in the fabrication of optoelectronic devices including invisible electronics and all-oxide power electronics. While n-type transparent electrodes have already reached widespread industrial production, the lack of p-type counterparts with comparable transparency and conductivity has created a bottleneck for the development of next-generation optoelectronic devices. In this work, we present the fabrication of delafossite copper chromium oxide p-type transparent electrodes with outstanding optical and electrical properties. These layers were deposited using ultrasonic spray pyrolysis, a wet chemical method that is fast, simple, and scalable. Through careful screening of the deposition conditions, highly crystalline, dense, and smooth CuCrO₂ coatings were obtained. A detailed investigation of the role played by the deposition temperature and the cation ratio enabled the properties of the prepared layers to be reliably tuned, as verified using X-ray diffraction, X-ray photoelectron spectroscopy, optical spectroscopy, Hall effect measurements, and electron and atomic force microscopies. We demonstrate record conductivities for solution-processed CuCrO₂, exceeding 100 S cm^-1, and we also obtained the highest value for two separate figures of merit for p-type transparent conducting oxides. These performances position solution-deposited CuCrO₂ as the leading p-type transparent-conducting oxide currently available.

Opto-Electronic Characterization of Photocatalysts Based on p,n-Junction Ternary and Quaternary Mixed Oxides Semiconductors (Cu2O-In2O3 and Cu2O-In2O3-TiO2)

Semiconductor materials are the basis of electronic devices employed in the communication and media industry. In the present work, we report the synthesis and characterization of mixed metal oxides (MOs) as p,n-junction photocatalysts, and demonstrate the correlation between the preparation technique and the properties of the materials. Solid-state UV-visible diffuse reflectance spectroscopy (UV-VIS DRS) allowed for the determination of the light absorption properties and the optical energy gap. X-ray photoelectron spectroscopy (XPS) allowed for the determination of the surface speciation and composition and for the determination of the valence band edge. The opto-electronic behavior was evaluated measuring the photocurrent generated after absorption of chopped visible light in a 3-electrode cell. Scanning electron microscopy (SEM) measurements allowed for auxiliary characterization of size and morphology, showing the formation of composites for the ternary Cu2O-In2O3 p,n-mixed oxide, and even more for the quaternary Cu2O-In2O3-TiO2 MO. Light absorption spectra and photocurrent-time curves mainly depend upon the composition of MOs, while the optical energy gap and defective absorption tail are closely related to the preparation methodology, time and thermal treatment. Qualitative electronic band structures of semiconductors are also presented.

Toward controlling the Al2O3/ZnO interface properties by in situ ALD preparation

The electronic band alignment of an alumina/zinc oxide thin-film heterostructure solely grown by atomic layer deposition has been determined by XPS/UPS depth profiling, correlating the electronic properties with the interface chemical composition.

Determination of the valence band edge of Fe oxide nanoparticles dispersed in aqueous solution through resonant photoelectron spectroscopy from a liquid microjet

We use X-ray photoemission and a near ambient pressure with a liquid microjet setup to investigate the electronic structure of FeOOH nanoparticles dispersed in aqueous solution. In particular, we show that by using X-ray resonant photoemission in dilute solutions, we can overcome the limits of conventional photoemission such as low nanoparticle-to-solvent signal ratio, and local nanoparticle charging and measure the valence band structure of FeOOH nanoparticles in aqueous solution with chemical specificity. The resonant photoemission signal across the Fe 2p_3/2 absorption edge is measured for 2 wt% aqueous solutions of FeOOH nanoparticles (NPs) and the valence band maximum (VBM) of the hydrated FeOOH nanoparticles is determined. We compare the obtained VBM value in aqueous solution to that of FeOOH NPs in the dry phase. We show that the valence band edge position of NPs in the liquid phase can be accurately predicted from the values obtained in the dry phase provided that a simple potential shift due to solution chemistry is applied. Our results demonstrate the suitability of resonant photoemission in measuring the electronic structure of strongly diluted nanosystems where the conventional non-resonant photoemission technique fails.

Visualization of band offsets at few-layer MoS2/Ge heterojunction

The visualization of band alignment for designing heterostructures between transition metal dichalcogenides and germanium plays a vital role in a deeper understanding of carrier dynamics at the heterointerface. Here, to study the band alignment across the MoS₂/Ge heterojunction, we have deposited a wafer-scale highly crystalline few atomic layers MoS₂film via a highly controllable and scalable sputtering technique coupled with a post sulfurization process in a sulfur-rich environment. The Raman and XRD spectra of as-fabricated MoS₂/Ge heterojunction expose the presence of highly crystalline few atomic layer MoS₂on top of Ge substrate. Interestingly, we found a type-II band alignment at the MoS₂/Ge heterointerface having valence band, and conduction band offset values of 0.88 and 0.21 eV, which can provide very efficient recombination through spatially confining charge carriers. The calculation of band offset parameters offers a promising way for device engineering across the MoS₂/Ge heterojunction interface. Moreover, to demonstrate the practicability of the fabricated heterostructure, we explored the suitability of our device for broadband photodetection applications.

Doping-Enabled Reconfigurable Strongly Correlated Phase in a Quasi-2D Perovskite

Highlighted by the discovery of high-temperature superconductivity, strongly correlated oxides with highly distorted perovskite structures serve as intriguing model systems for pursuing emerging materials physics and testing technological concepts. While 3d correlated oxides with a distorted perovskite structure are not uncommon, their 4d counterparts are unfortunately rare. In this work, we report the tuning of the electrical and optical properties of a quasi-2D perovskite niobate CsBiNb₂O₇ via hydrogenation. It is observed that hydrogenation induces drastic changes of lattice dynamics, optical transmission, and conductance. It is suggested that changing the orbital occupancy of Nb d orbitals could trigger the on-site Coulomb interaction in the NbO₆ octahedron. The observed hydrogen doping-induced electrical plasticity is implemented for simulating neural synaptic activity. Our finding sheds light on the role of hydrogen in 4d transition metal oxides and suggests a new avenue for the design and development of novel electronic phases.

Electroreduction of Aryldiazonium Ion at the Polar and Non-Polar Faces of ZnO: Characterisation of the Grafted Films and Their Influence on Near-Surface Band Bending

ZnO is a strong candidate for transparent electronic devices due to its wide band gap and earth-abundance, yet its practical use is limited by its surface metallicity arising from a surface electron accumulation layer (SEAL). The SEAL forms by hydroxylation of the surface under normal atmospheric conditions, and is present at all crystal faces of ZnO, although with differing hydroxyl structures. Multilayer aryl films grafted from aryldiazonium salts have previously been shown to decrease the downward bending at O-polar ZnO thin films, with Zn-O-C bonds anchoring the aryl films to the substrate. Herein we show that the Zn-polar (0001), O-polar (000 1 ‾ ), and non-polar m-plane (10 1 ‾ 0) faces of ZnO single crystals, can also be successfully electrografted with nitrophenyl (NP) films. In all cases, X-ray photoelectron spectroscopy (XPS) measurements reveal that the downward surface band bending decreases after modification. XPS provides strong evidence for Zn-O-C bonding at each face. Electrochemical reduction of NP films on O-polar ZnO single crystals converts the film to a mainly aminophenyl layer, although with negligible further change in band bending. This contrasts with the large upward shifts in band bending caused by X-ray induced reduction.

Band Structure Extraction at Hybrid Narrow-Gap Semiconductor-Metal Interfaces

The design of epitaxial semiconductor-superconductor and semiconductor-metal quantum devices requires a detailed understanding of the interfacial electronic band structure. However, the band alignment of buried interfaces is difficult to predict theoretically and to measure experimentally. This work presents a procedure that allows to reliably determine critical parameters for engineering quantum devices; band offset, band bending profile, and number of occupied quantum well subbands of interfacial accumulation layers at semiconductor-metal interfaces. Soft X-ray angle-resolved photoemission is used to directly measure the quantum well states as well as valence bands and core levels for the InAs(100)/Al interface, an important platform for Majorana-zero-mode based topological qubits, and demonstrate that the fabrication process strongly influences the band offset, which in turn controls the topological phase diagrams. Since the method is transferable to other narrow gap semiconductors, it can be used more generally for engineering semiconductor-metal and semiconductor-superconductor interfaces in gate-tunable superconducting devices.

Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate

Hexagonal boron nitride (hBN) and diamond are promising materials for next-generation electronics and optoelectronics. However, their combination is rarely reported. In this study, we for the first time demonstrate the success to direct growth of two-dimensional (2D) hBN crystal layers on diamond substrates by metalorganic vapor phase epitaxy. Compared with the disordered growth we found on diamond (100), atomic force microscopy, X-ray diffraction, and transmission electron microscopy results all support 2D hBN with highly oriented lattice formation on diamond (111). Also, the epitaxial relationship between hBN and diamond (111) substrate is revealed to be [0 0 0 1]_hBN // [1 1 1]_diamond and [1 0 1̅ 0]_hBN // [1 1 2̅]_diamond. The valence band offset at hBN/diamond (111) heterointerface determined by X-ray photoelectron spectroscopy is 1.4 ± 0.2 eV, thus yielding a conduction band offset of 1.0 ± 0.2 eV and type II staggered band alignment with a bandgap of 5.9 eV assumed for hBN. Furthermore, prior thermal cleaning of diamond in a pure H₂ atmosphere smoothens the surface for well-ordered layered hBN epitaxy, while thermal cleaning in a mixed H₂ and NH₃ atmosphere etches the diamond surface, creating many small faceted pits that destroy the following epitaxy of hBN.

Synthesis and Characterization of p-n Junction Ternary Mixed Oxides for Photocatalytic Coprocessing of CO2 and H2O

In the present paper, we report the synthesis and characterization of both binary (Cu2O, Fe2O3, and In2O3) and ternary (Cu2O-Fe2O3 and Cu2O-In2O3) transition metal mixed-oxides that may find application as photocatalysts for solar driven CO2 conversion into energy rich species. Two different preparation techniques (High Energy Milling (HEM) and Co-Precipitation (CP)) are compared and materials properties are studied by means of a variety of characterization and analytical techniques UV-Visible Diffuse Reflectance Spectroscopy (UV-VIS DRS), X-ray Photoelectron Spectroscopy (XPS), X-Ray Diffraction (XRD), Transmission Electron Microscopy (TEM), and Energy Dispersive X-Ray spectrometry (EDX). Appropriate data elaboration methods are used to extract materials bandgap for Cu2O@Fe2O3 and Cu2O@In2O3 prepared by HEM and CP, and foresee whether the newly prepared semiconductor mixed oxides pairs are useful for application in CO2-H2O coprocessing. The experimental results show that the synthetic technique influences the photoactivity of the materials that can correctly be foreseen on the basis of bandgap experimentally derived. Of the mixed oxides prepared and described in this work, only Cu2O@In2O3 shows positive results in CO2-H2O photo-co-processing. Preliminary results show that the composition and synthetic methodologies of mixed-oxides, the reactor geometry, the way of dispersing the photocatalyst sample, play a key role in the light driven reaction of CO2–H2O. This work is a rare case of full characterization of photo-materials, using UV-Visible DRS, XPS, XRD, TEM, EDX for the surface and bulk analytical characterization. Surface composition may not be the same of the bulk composition and plays a key role in photocatalysts behavior. We show that a full material knowledge is necessary for the correct forecast of their photocatalytic behavior, inferred from experimentally determined bandgaps.

Spatial defects nanoengineering for bipolar conductivity in MoS2

Understanding the atomistic origin of defects in two-dimensional transition metal dichalcogenides, their impact on the electronic properties, and how to control them is critical for future electronics and optoelectronics. Here, we demonstrate the integration of thermochemical scanning probe lithography (tc-SPL) with a flow-through reactive gas cell to achieve nanoscale control of defects in monolayer MoS₂. The tc-SPL produced defects can present either p- or n-type doping on demand, depending on the used gasses, allowing the realization of field effect transistors, and p-n junctions with precise sub-μm spatial control, and a rectification ratio of over 10⁴. Doping and defects formation are elucidated by means of X-Ray photoelectron spectroscopy, scanning transmission electron microscopy, and density functional theory. We find that p-type doping in HCl/H₂O atmosphere is related to the rearrangement of sulfur atoms, and the formation of protruding covalent S-S bonds on the surface. Alternatively, local heating MoS₂ in N₂ produces n-character.

Bipolar conductivity is fundamental for electronic devices based on two-dimensional semiconductors. Here, the authors report on-demand p- and n-doping of monolayer MoS₂ via defects engineering using thermochemical scanning probe lithography, and achieve a p-n junction with rectification ratio over 10⁴.

Novel Boron-Doped p-Type Cu2O Thin Films as a Hole-Selective Contact in c-Si Solar Cells

p-type Cu₂O thin films doped with trivalent cation boron are demonstrated for the first time as an efficient hole-selective layer for c-Si heterojunction solar cells. Cu₂O and Cu₂O:B films were deposited by rf magnetron sputtering, and the optical and electrical properties of the doped and undoped films were investigated. Boron doping enhanced the carrier concentration and the electrical conductivity of the Cu₂O film. The band alignment of the Cu₂O:B/Si heterojunction was investigated using XPS and UPS measurements. The Cu₂O:B/Si interface has a valance band offset of 0.08 eV, which facilitates hole transport, and a conduction band offset of 1.35 eV, which blocks the electrons. A thin SiO_x tunnel oxide interlayer was also explored as the passivation layer. The initial trials of incorporating this Cu₂O:B layer as a hole transporting layer in a single heterojunction solar cell with the structure, ITO/Cu₂O:B/n-Si/Ag, and a cell area of 1 cm² yielded an open-circuit voltage of 370 mV, a short-circuit current density of 36.5 mA/cm², and an efficiency of 5.4%. This p-type material could find potential applications in various optoelectronic applications like organic solar cells, TFTs, and LEDs.

Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

Hybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS₂ on β-Ga₂O₃([Formula: see text]01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS₂/3D-β-Ga₂O₃ heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.

Cr-Triggered Local Structural Change in Cr2Ge2Te6 Phase Change Material

Cr₂Ge₂Te₆ (CrGT) is a phase change material with higher resistivity in the crystalline phase than in the amorphous phase. CrGT exhibits an ultralow operation energy for amorphization. In this study, the origin of the increased resistance in crystalline CrGT compared to amorphous CrGT and the underlying phase change mechanism were investigated in terms of both local structural change and associated change in electronic state. The density of states at the Fermi level in crystalline CrGT decreased with increasing annealing temperature and became negligible upon annealing at 380 °C. Simultaneously, the Fermi level shifted from the vicinity of the valence band to the band gap center, leading to an increase in resistance. The phase change from amorphous to crystalline CrGT occurred through a metastable crystalline phase with a local structure similar to that of the amorphous phase. Cr nanoclusters were confirmed to exist in both the amorphous and crystalline phases. The presence of Cr nanoclusters induced Cr vacancies in the crystalline phase. These Cr vacancies generated hole carriers, leading to p-type conduction. Photoelectron spectroscopy of the Cr 2s core level clearly indicated a decrease in the fraction of Cr-Cr bonds and an increase in the fraction of Cr-Te bonds in crystalline CrGT upon annealing. Meanwhile, the coordination number of the Cr nanoclusters decreased as the number of Cr-Cr bonds was reduced. Together, these results imply that the origin of the increased resistance in crystalline CrGT is the filling of Cr vacancies by Cr atoms diffusing from Cr nanoclusters.

Investigation of Nitridation on the Band Alignment at MoS2/HfO2 Interfaces

The effect of nitridation treatment on the band alignment between few-layer MoS2 and HfO2 has been investigated by X-ray photoelectron spectroscopy. The valence (conduction) band offsets of MoS2/HfO2 with and without nitridation treatment were determined to be 2.09 ± 0.1 (2.41 ± 0.1) and 2.34 ± 0.1 (2.16 ± 0.1) eV, respectively. The tunable band alignment could be attributed to the Mo-N bonding formation and surface band bending for HfO2 triggered by nitridation. This study on the energy band engineering of MoS2/HfO2 heterojunctions may also be extended to other high-k dielectrics for integrating with two-dimensional materials to design and optimize their electronic devices.

In-Gap States and Band-Like Transport in Memristive Devices

Point defects such as oxygen vacancies cause emergent phenomena such as resistive switching in transition-metal oxides, but their influence on the electron-transport properties is far from being understood. Here, we employ direct mapping of the electronic structure of a memristive device by spectromicroscopy. We find that oxygen vacancies result in in-gap states that we use as input for single-band transport simulations. Because the in-gap states are situated below the Fermi level, they do not contribute to the current directly but impact the shape of the conduction band. Accordingly, we can describe our devices with band-like transport and tunneling across the Schottky barrier at the interface.

The effect of covalently bonded aryl layers on the band bending and electron density of SnO2 surfaces probed by synchrotron X-ray photoelectron spectroscopy

A downward to upward surface band bending change can be induced by grafted 4-(trifluoromethyl)phenyl groups on SnO₂.

Heterogeneous photocatalysts: an overview of classic and modern approaches for optical, electronic, and charge dynamics evaluation

This review summarizes current experimental techniques, including the conventional and the state-of-the-art tools, to examine the key aspects of photocatalysts.

Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices

In this study, we investigated the influence of oxygen non-stoichiometry on the resistive switching performance of tantalum oxide based memristive devices. Thin-films of tantalum oxide were deposited with varying sputter power and oxygen partial pressure. The electroforming voltage was found to decrease with increasing power density or decreased oxygen partial pressure, while the endurance remained stable and the resistance window ROFF/RON was found to increase. In-depth XPS analysis connects these observations to a controllable oxygen sub-stoichiometry in the sputter-deposited films. Our analysis shows that the decrease of the forming voltage results from an increase in carrier density in the as-prepared thin-films, which is induced by the presence of oxygen vacancies.

Observation of surface plasmon polaritons in 2D electron gas of surface electron accumulation in InN nanostructures

Recently, heavily doped semiconductors have been emerging as an alternative to low-loss plasmonic materials. InN, belonging to the group III nitrides, possesses the unique property of surface electron accumulation (SEA), which provides a 2D electron gas (2DEG) system. In this report, we demonstrated the surface plasmon properties of InN nanoparticles originating from SEA using the real-space mapping of the surface plasmon fields for the first time. The SEA is confirmed by Raman studies, which are further corroborated by photoluminescence and photoemission spectroscopic studies. The frequency of 2DEG corresponding to SEA is found to be in the THz region. The periodic fringes are observed in the near-field scanning optical microscopic images of InN nanostructures. The observed fringes are attributed to the interference of propagated and back-reflected surface plasmon polaritons (SPPs). The observation of SPPs is solely attributed to the 2DEG corresponding to the SEA of InN. In addition, a resonance kind of behavior with the enhancement of the near-field intensity is observed in the near-field images of InN nanostructures. Observation of SPPs indicates that InN with SEA can be a promising THz plasmonic material for light confinement.

Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In2O3 nanowires

We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In₂O₃) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In₂O₃ nanostructure based device characteristics for potential optoelectronic applications. In₂O₃ nanowires with cubic crystal structure (c-In₂O₃) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor-liquid-solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy [Formula: see text] defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of [Formula: see text] defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.

UPS and UV spectroscopies combined to position the energy levels of TiO2 anatase and rutile nanopowders

Positioning of absolute energy levels and the quantitative description of occupied levels obtained for TiO₂ nanopowders, combining UPS and UV-Vis spectroscopies.

Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy

Pure aluminum oxide (Al₂O₃) and zinc aluminum oxide (Zn _x Al_1-x O) thin films were deposited by atomic layer deposition (ALD). The microstructure and optical band gaps (E _g ) of the Zn _x Al_1-x O (0.2 ≤ x ≤ 1) films were studied by X-ray diffractometer and Tauc method. The band offsets and alignment of atomic-layer-deposited Al₂O₃/Zn_0.8Al_0.2O heterojunction were investigated in detail using charge-corrected X-ray photoelectron spectroscopy. In this work, different methodologies were adopted to recover the actual position of the core levels in insulator materials which were easily affected by differential charging phenomena. Valence band offset (ΔE _V) and conduction band offset (ΔE _C) for the interface of the Al₂O₃/Zn_0.8Al_0.2O heterojunction have been constructed. An accurate value of ΔE _V = 0.82 ± 0.12 eV was obtained from various combinations of core levels of heterojunction with varied Al₂O₃ thickness. Given the experimental E _g of 6.8 eV for Al₂O₃ and 5.29 eV for Zn_0.8Al_0.2O, a type-I heterojunction with a ΔE _C of 0.69 ± 0.12 eV was found. The precise determination of the band alignment of Al₂O₃/Zn_0.8Al_0.2O heterojunction is of particular importance for gaining insight to the design of various electronic devices based on such heterointerface.

Highly Efficient Performance and Conversion Pathway of Photocatalytic NO Oxidation on SrO-Clusters@Amorphous Carbon Nitride

This work demonstrates the first molecular-level conversion pathway of NO oxidation over a novel SrO-clusters@amorphous carbon nitride (SCO-ACN) photocatalyst, which is synthesized via copyrolysis of urea and SrCO₃. The inclusion of SrCO₃ is crucial in the formation of the amorphous carbon nitride (ACN) and SrO clusters by attacking the intralayer hydrogen bonds at the edge sites of graphitic carbon nitride (CN). The amorphous nature of ACN can promote the transportation, migration, and transformation of charge carriers on SCO-ACN. And the SrO clusters are identified as the newly formed active centers to facilitate the activation of NO via the formation of Sr-NO^δ(+), which essentially promotes the conversion of NO to the final products. The combined effects of the amorphous structure and SrO clusters impart outstanding photocatalytic NO removal efficiency to the SCO-ACN under visible-light irradiation. To reveal the photocatalytic mechanism, the adsorption and photocatalytic oxidation of NO over CN and SCO-ACN are analyzed by in situ DRIFTS, and the intermediates and conversion pathways are elucidated and compared. This work presents a novel in situ DRIFTS-based strategy to explore the photocatalytic reaction pathway of NO oxidation, which is quite beneficial to understand the mechanism underlying the photocatalytic reaction and advance the development of photocatalytic technology for environmental remediation.

Electronic Structure and Band Alignment at the NiO and SrTiO3 p-n Heterojunctions

Understanding the energetics at the interface, including the alignment of valence and conduction bands, built-in potentials, and ionic and electronic reconstructions, is an important challenge in designing oxide interfaces that have controllable multifunctionalities for novel (opto-)electronic devices. In this work, we report detailed investigations on the heterointerface of wide-band-gap p-type NiO and n-type SrTiO₃ (STO). We show that despite a large lattice mismatch (∼7%) and dissimilar crystal structure, high-quality NiO and Li-doped NiO (LNO) thin films can be epitaxially grown on STO(001) substrates through a domain-matching epitaxy mechanism. X-ray photoelectron spectroscopy studies indicate that NiO/STO heterojunctions form a type II "staggered" band alignment. In addition, a large built-in potential of up to 0.97 eV was observed at the interface of LNO and Nb-doped STO (NbSTO). The LNO/NbSTO p-n heterojunctions exhibit not only a large rectification ratio of 2 × 10³ but also a large ideality factor of 4.3. The NiO/STO p-n heterojunctions have important implications for applications in photocatalysis and photodetectors as the interface provides favorable energetics for facile separation and transport of photogenerated electrons and holes.

Improved electron-hole separation and migration in anatase TiO2 nanorod/reduced graphene oxide composites and their influence on photocatalytic performance

The as-synthesized TiO₂ nanorods a-TNR (amorphous TiO₂ layer covering the crystalline anatase TiO₂ core) and TNR (fully crystalline anatase TiO₂) were decorated with reduced graphene oxide (rGO) to synthesize two series of TiO₂ + rGO composites with different nominal loadings of GO (from 4 to 20 wt%). The structural, surface and electronic properties of the obtained TiO₂ + rGO composites were analyzed and correlated to their performance in the photocatalytic oxidation of aqueous bisphenol A solution. X-ray photoelectron spectroscopy (XPS) analyses revealed that charge separation in TiO₂ + rGO composites is improved due to the perfect matching of TiO₂ and rGO valence band maxima (VBM). Cyclic voltammetry (CV) experiments revealed that the peak-to-peak separations (ΔE_p) are the lowest and the oxidation current densities are the highest for composites with a nominal 10 wt% GO content, meaning that it is much easier for the charge carriers to percolate through the solid, resulting in improved charge migration. Due to the high charge carrier mobility in rGO and perfect VBM matching between TiO₂ and rGO, the electron-hole recombination in composites was suppressed, resulting in more electrons and holes being able to participate in the photocatalytic reaction. rGO amounts above 10 wt% decreased the photocatalytic activity; thus, it is critical to optimize its amount in the TiO₂ + rGO composites for achieving the highest photocatalytic activity. BPA degradation rates correlated completely with the results of the CV measurements, which directly evidenced improved charge separation and migration as the crucial parameters governing photocatalysis.

Interface Structure, Band Alignment, and Built-In Potentials at LaFeO_{3}/n-SrTiO_{3} Heterojunctions

Interface structure at polar-nonpolar interfaces has been shown to be a key factor in controlling emergent behavior in oxide heterostructures, including the LaFeO_{3}/n-SrTiO_{3} system. We demonstrate via high-energy-resolution x-ray photoemission that epitaxial LaFeO_{3}/n-SrTiO_{3}(001) heterojunctions engineered to have opposite interface polarities exhibit very similar band offsets and potential gradients within the LaFeO_{3} films. However, differences in the potential gradient within the SrTiO_{3} layer depending on polarity may promote hole diffusion into LaFeO_{3} for applications in photocatalysis.

Tuning the Band Bending and Controlling the Surface Reactivity at Polar and Nonpolar Surfaces of ZnO through Phosphonic Acid Binding

ZnO is a prime candidate for future use in transparent electronics; however, development of practical materials requires attention to factors including control of its unusual surface band bending and surface reactivity. In this work, we have modified the O-polar (0001̅), Zn-polar (0001), and m-plane (101̅0) surfaces of ZnO with phosphonic acid (PA) derivatives and measured the effect on the surface band bending and surface sensitivity to atmospheric oxygen. Core level and valence band synchrotron X-ray photoemission spectroscopy was used to measure the surface band bending introduced by PA modifiers with substituents of opposite polarity dipole moment: octadecylphosphonic acid (ODPA) and 3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctylphosphonic acid (F₁₃OPA). Both PAs act as surface electron donors, increasing the downward band bending and the strength of the two-dimensional surface electron accumulation layer on all of the ZnO surfaces investigated. On the O-polar (0001̅) and m-plane (101̅0) surfaces, the ODPA modifier produced the largest increase in downward band bending relative to the hydroxyl-terminated unmodified surface of 0.55 and 0.35 eV, respectively. On the Zn-polar (0001) face, the F₁₃OPA modifier gave the largest increase (by 0.50 eV) producing a total downward band bending of 1.00 eV, representing ∼30% of the ZnO band gap. Ultraviolet (UV) photoinduced surface wettability and photoconductivity measurements demonstrated that the PA modifiers are effective at decreasing the sensitivity of the surface toward atmospheric oxygen. Modification with PA derivatives produced a large increase in the persistence of UV-induced photoconductivity and a large reduction in UV-induced changes in surface wettability.

Synthesis and Stabilization of Blue-Black TiO2 Nanotube Arrays for Electrochemical Oxidant Generation and Wastewater Treatment

Efficient, inexpensive, and stable electrode materials are key components of commercially viable electrochemical wastewater treatment system. In this study, blue-black TiO₂ nanotube array (BNTA) electrodes are prepared by electrochemical self-doping. The 1-D structure, donor state density, and Fermi energy level position are critical for maintaining the semimetallic functionality of the BNTA. The structural strength of the BNTA is enhanced by surface crack minimization, reinforcement of the BNTA-Ti metal interface, and stabilized by a protective overcoating with nanoparticulate TiO₂ (Ti/EBNTA). Ti/EBNTA electrodes are employed as both anodes and cathodes with polarity switching at a set frequency. Oxidants are generated at the anode, while the doping levels are regenerated along with byproduct reduction at the cathode. The estimated maximum electrode lifetime is 16 895 h. Ti/EBNTA has comparable hydroxyl radical production activity (6.6 × 10^-14 M) with boron-doped diamond (BDD, 7.4 × 10^-14 M) electrodes. The chlorine production rate follows a trend with respective to electrode type of Ti/EBNTA > BDD > IrO₂. Ti/EBNTA electrodes operated in a bipolar mode have a minimum energy consumption of 62 kWh/kg COD, reduced foam formation due to less gas bubble production, minimum scale formation, and lower chlorate production levels (6 mM vs 18 mM for BDD) during electrolytic wastewater treatment.

Superconductor to Mott insulator transition in YBa2Cu3O7/LaCaMnO3 heterostructures

The superconductor-to-insulator transition (SIT) induced by means such as external magnetic fields, disorder or spatial confinement is a vivid illustration of a quantum phase transition dramatically affecting the superconducting order parameter. In pursuit of a new realization of the SIT by interfacial charge transfer, we developed extremely thin superlattices composed of high Tc superconductor YBa2Cu3O7 (YBCO) and colossal magnetoresistance ferromagnet La0.67Ca0.33MnO3 (LCMO). By using linearly polarized resonant X-ray absorption spectroscopy and magnetic circular dichroism, combined with hard X-ray photoelectron spectroscopy, we derived a complete picture of the interfacial carrier doping in cuprate and manganite atomic layers, leading to the transition from superconducting to an unusual Mott insulating state emerging with the increase of LCMO layer thickness. In addition, contrary to the common perception that only transition metal ions may respond to the charge transfer process, we found that charge is also actively compensated by rare-earth and alkaline-earth metal ions of the interface. Such deterministic control of Tc by pure electronic doping without any hindering effects of chemical substitution is another promising route to disentangle the role of disorder on the pseudo-gap and charge density wave phases of underdoped cuprates.

Direct Measurements of Fermi Level Pinning at the Surface of Intrinsically n-Type InGaAs Nanowires

Surface effects strongly dominate the intrinsic properties of semiconductor nanowires (NWs), an observation that is commonly attributed to the presence of surface states and their modification of the electronic band structure. Although the effects of the exposed, bare NW surface have been widely studied with respect to charge carrier transport and optical properties, the underlying electronic band structure, Fermi level pinning, and surface band bending profiles are not well explored. Here, we directly and quantitatively assess the Fermi level pinning at the surfaces of composition-tunable, intrinsically n-type InGaAs NWs, as one of the prominent, technologically most relevant NW systems, by using correlated photoluminescence (PL) and X-ray photoemission spectroscopy (XPS). From the PL spectral response, we reveal two dominant radiative recombination pathways, that is, direct near-band edge transitions and red-shifted, spatially indirect transitions induced by surface band bending. The separation of their relative transition energies changes with alloy composition by up to more than ∼40 meV and represent a direct measure for the amount of surface band bending. We further extract quantitatively the Fermi level to surface valence band maximum separation using XPS, and directly verify a composition-dependent transition from downward to upward band bending (surface electron accumulation to depletion) with increasing Ga-content x(Ga) at a crossover near x(Ga) ∼ 0.2. Core level spectra further demonstrate the nature of extrinsic surface states being caused by In-rich suboxides arising from the native oxide layer at the InGaAs NW surface.

Remote Plasma Oxidation and Atomic Layer Etching of MoS2

Exfoliated molybdenum disulfide (MoS2) is shown to chemically oxidize in a layered manner upon exposure to a remote O2 plasma. X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), and atomic force microscopy (AFM) are employed to characterize the surface chemistry, structure, and topography of the oxidation process and indicate that the oxidation mainly occurs on the topmost layer without altering the chemical composition of underlying layer. The formation of S-O bonds upon short, remote plasma exposure pins the surface Fermi level to the conduction band edge, while the MoOx formation at high temperature modulates the Fermi level toward the valence band through band alignment. A uniform coverage of monolayer amorphous MoO3 is obtained after 5 min or longer remote O2 plasma exposure at 200 °C, and the MoO3 can be completely removed by annealing at 500 °C, leaving a clean ordered MoS2 lattice structure as verified by XPS, LEED, AFM, and scanning tunneling microscopy. This work shows that a remote O2 plasma can be useful for both surface functionalization and a controlled thinning method for MoS2 device fabrication processes.

Screening mechanisms at polar oxide heterointerfaces

The interfaces of polar oxide heterostructures can display electronic properties unique from the oxides they border, as they require screening from either internal or external sources of charge. The screening mechanism depends on a variety of factors, including the band structure at the interface, the presence of point defects or adsorbates, whether or not the oxide is ferroelectric, and whether or not an external field is applied. In this review, we discuss both theoretical and experimental aspects of different screening mechanisms, giving special emphasis to ways in which the mechanism can be altered to provide novel or tunable functionalities. We begin with a theoretical introduction to the problem and highlight recent progress in understanding the impact of point defects on polar interfaces. Different case studies are then discussed, for both the high thickness regime, where interfaces must be screened and each interface can be considered separately, and the low thickness regime, where the degree and nature of screening can be manipulated and the interfaces are close enough to interact. We end with a brief outlook toward new developments in this rapidly progressing field.

Surface Tomonaga-Luttinger-Liquid State on Bi/InSb(001)

A 1D metallic surface state was created on an anisotropic InSb(001) surface covered with Bi. Angle-resolved photoelectron spectroscopy (ARPES) showed a 1D Fermi contour with almost no 2D distortion. Close to the Fermi level (E_{F}), the angle-integrated photoelectron spectra showed power-law scaling with the binding energy and temperature. The ARPES plot above E_{F}, obtained thanks to a thermally broadened Fermi edge at room temperature, showed a 1D state with continuous metallic dispersion across E_{F} and power-law intensity suppression around E_{F}. These results strongly suggest a Tomonaga-Luttinger liquid on the Bi/InSb(001) surface.

Enhanced wetting of Cu on ZnO by migration of subsurface oxygen vacancies

Metal adhesion on metal oxides is strongly controlled by the oxide surface structure and composition, but lack of control over the surface conditions often limits the possibilities to exploit this in opto- and micro-electronics applications and heterogeneous catalysis where nanostructural control is of utmost importance. The Cu/ZnO system is among the most investigated of such systems in model studies, but the presence of subsurface ZnO defects and their important role for adhesion on ZnO have been unappreciated so far. Here we reveal that the surface-directed migration of subsurface defects affects the Cu adhesion on polar ZnO(0001) in the technologically interesting temperature range up to 550 K. This leads to enhanced adhesion and ultimately complete wetting of ZnO(0001) by a Cu overlayer. On the basis of our experimental and computational results we demonstrate a mechanism which implies that defect concentrations in the bulk are an important, and possibly controllable, parameter for the metal-on-oxide growth.

Comprehensive elucidation of metal-support interactions is important for controlling and improving their performances in a range of pertinent technologies. Here, the authors reveal how subsurface defects influence the adhesion and wetting of a metal on the surface of a metal oxide.

Evolution of the surface state in Bi2Se2Te thin films during phase transition

Topological insulators, a new quantum state of matter, have created exciting opportunities for studies in topological quantum physics and for exploring spintronics applications due to their gapless helical metallic surface states. In this study, thin films composed of alternate layers of Bi and Se (Te) ({Bi(3 Å)Te(9 Å)}n/{Bi(3 Å)Se(9 Å)}n) were fabricated by controlling the layer thickness within the atomic scale using thermal evaporation techniques. The high-purity growth of uniform Bi2Se2Te1 thin films has not yet been achieved using a thermal evaporation method. However, as a result of a self-ordering process during annealing, an as-grown amorphous film with p-type polarity could transform into single crystalline Bi2Se2Te1 with n-type polarity. Using THz-time domain spectroscopy (THz-TDS) and ultraviolet photoemission spectroscopy (UPS), we concluded that the conductivity is dominated by the Drude contribution, suggesting the presence of a quantum well state and surface states. Moreover we demonstrated that the emission of terahertz waves from the (001) surface of the single crystalline Bi2Se2Te1 thin film would be possible under the excitation of 790 nm femtosecond optical pulses, indicating the presence of a Dirac-fermion, a photo-Dember effect at the surface state and the transient current within the surface depletion region. The results reported herein provide useful information regarding a valuable deposition method that can be useful in studies of the evolution of surface state electrons in topological insulators.

Integration of SrTiO3 on crystallographically oriented epitaxial germanium for low-power device applications

SrTiO3 integration on crystallographic oriented (100), (110), and (111) epitaxial germanium (Ge) exhibits a potential for a new class of nanoscale transistors. Germanium is attractive due to its superior transport properties while SrTiO3 (STO) is promising due to its high relative permittivity, both being critical parameters for next-generation low-voltage and low-leakage metal-oxide semiconductor field-effect transistors. The sharp heterointerface between STO and each crystallographically oriented Ge layer, studied by cross-sectional transmission electron microscopy, as well as band offset parameters at each heterojunction offers a significant advancement for designing a new generation of ferroelectric-germanium based multifunctional devices. Moreover, STO, when used as an interlayer between metal and n-type (4 × 10(18) cm(-3)) epitaxial Ge in metal-insulator-semiconductor (MIS) structures, showed a 1000 times increase in current density as well as a decrease in specific contact resistance. Furthermore, the inclusion of STO on n-Ge demonstrated the first experimental findings of the MIS behavior of STO on n-Ge.

Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications

We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO₃-xBa(Cu_1/3Nb_2/3)O₃ (x = 0.025) (BT-BCN) integrated on to HfO₂ buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO₂ and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~10⁶ s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology.

Stoichiometry gradient, cation interdiffusion, and band alignment between a nanosized TiO2 blocking layer and a transparent conductive oxide in dye-sensitized solar cell front contacts

An angle-resolved photoemission spectroscopy study allowed us to identify cation interdiffusion and stoichiometry gradients at the interface between a nanosized TiO2 blocking layer and a transparent conductive Cd-Sn oxide substrate. A stoichiometry gradient for the Sn cations is already found in the bare Cd-Sn oxide layer. When TiO2 ultrathin layers are deposited by RF sputtering on the Cd-Sn oxide layer, Ti is found to partially replace Sn, resulting in a Cd-Sn-Ti mixed oxide layer with a thickness ranging from 0.85 to 3.3 nm. The band gap profile across the junction has been reconstructed for three TiO2 layers, resulting in a valence band offset decrease (and a conduction band offset increase) with the blocking layer thickness. The results are related to the cell efficiencies in terms of charge injection and recombination processes.