Dislocation-driven growth of two-dimensional lateral quantum-well superlattices

Low-voltage single-atom electron microscopy with carbon-based nanomaterials

The properties of materials are strongly correlated with their atomic scale structures. Achieving a comprehensive understanding of the atomic-scale structure-property relationship requires advancements of imaging and spectroscopy techniques. Aberration-corrected scanning transmission electron microscopy (STEM) has seen rapid development over the past decades and is now routinely employed for atomic-scale characterization. However, quantitative STEM imaging and spectroscopy analysis at the single-atom level is challenging due to the extremely weak signals generated from individual atom, thus imposing stringent requirements for analysis sensitivity. This review discusses the development and application of low-voltage STEM techniques with single-atom sensitivity, primarily based on recent research presented on an invited talk at the 5th 2D23 SALVE Symposium, including annular dark-field (ADF) imaging, functional imaging and electron energy-loss spectroscopy (EELS) analysis. Carbon-based nanomaterials were chosen as model systems for demonstrating the capabilities of single-atom STEM imaging and EELS analysis, due to their structural stability under low accelerating voltages and their rich physical and chemical properties. Moreover, this review summarizes recent advancements and applications of low-voltage single-atom STEM imaging and spectroscopy in the study of functional materials and discusses prospects for future developments.

Large-Area Epitaxial Growth of Transition Metal Dichalcogenides

Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.

Intrinsic Grain Boundary Structure and Enhanced Defect States in Air-Sensitive Polycrystalline 1T'-WTe2 Monolayer

Monolayer WTe2 has attracted significant attention for its unconventional superconductivity and topological edge states. However, its air sensitivity poses challenges for studying intrinsic defect structures. This study addresses this issue using a custom-built inert gas interconnected system, and investigate the intrinsic grain boundary (GB) structures of monolayer polycrystalline 1T' WTe2 grown by nucleation-controlled chemical vapor deposition (CVD) method. These findings reveal that GBs in this system are predominantly governed by W-Te rhombi with saturated coordination, resulting in three specific GB prototypes without dislocation cores. The GBs exhibit anisotropic orientations influenced by kinks formed from these fundamental units, which in turn affect the distribution of grains in various shapes within polycrystalline flakes. Scanning tunneling microscopy/spectroscopy (STM/S) analysis further reveals metallic states along the intrinsic 120° twin grain boundary (TGB), consistent with computed band structures. This systematic exploration of GBs in air-sensitive 1T' WTe2 monolayers provides valuable insights into emerging GB-related phenomena.

Anomalous isotope effect on the optical bandgap in a monolayer transition metal dichalcogenide semiconductor

Isotope effects have received increasing attention in materials science and engineering because altering isotopes directly affects phonons, which can affect both thermal properties and optoelectronic properties of conventional semiconductors. However, how isotopic mass affects the optoelectronic properties in 2D semiconductors remains unclear because of measurement uncertainties resulting from sample heterogeneities. Here, we report an anomalous optical bandgap energy red shift of 13 (±7) milli-electron volts as mass of Mo isotopes is increased in laterally structured 100MoS2-92MoS2 monolayers grown by a two-step chemical vapor deposition that mitigates the effects of heterogeneities. This trend, which is opposite to that observed in conventional semiconductors, is explained by many-body perturbation and time-dependent density functional theories that reveal unusually large exciton binding energy renormalizations exceeding the ground-state renormalization energy due to strong coupling between confined excitons and phonons. The isotope effect on the optical bandgap reported here provides perspective on the important role of exciton-phonon coupling in the physical properties of two-dimensional materials.

Next-Generation Photodetectors beyond Van Der Waals Junctions

With the continuous advancement of nanofabrication techniques, development of novel materials, and discovery of useful manipulation mechanisms in high-performance applications, especially photodetectors, the morphology of junction devices and the way junction devices are used are fundamentally revolutionized. Simultaneously, new types of photodetectors that do not rely on any junction, providing a high signal-to-noise ratio and multidimensional modulation, have also emerged. This review outlines a unique category of material systems supporting novel junction devices for high-performance detection, namely, the van der Waals materials, and systematically discusses new trends in the development of various types of devices beyond junctions. This field is far from mature and there are numerous methods to measure and evaluate photodetectors. Therefore, it is also aimed to provide a solution from the perspective of applications in this review. Finally, based on the insight into the unique properties of the material systems and the underlying microscopic mechanisms, emerging trends in junction devices are discussed, a new morphology of photodetectors is proposed, and some potential innovative directions in the subject area are suggested.

Valley-optical absorption in planar transition metal dichalcogenide superlattices

In this study, we investigate the optical absorption of a planar superlattice comprising alternatively arranged two-dimensional Transition Metal DiChalcogenide semiconductors. Within a semi-classical model and using the Dirac-like equation in the presence of light interaction as a perturbation, we obtained the governing Hamiltonian. Using this Hamiltonian, we derived a fully analytical relationship for the absorption coefficient of the structure. By calculating the effective mass for different bands and using the Drude-Lorentz model, our approach is able to determine the oscillator strength and the effective refractive index of the structure. We found that the spin-orbit coupling has important effect on the absorption coefficient and energy bands where it reduces the absorption coefficient of the structure from typical value of [Formula: see text]-[Formula: see text], also the valence band experiences a significant blue shift, while the conduction band shows minor changes due to spin orbit coupling. Moreover, the role of incident light angle and light polarization were studied in details at different valleys of [Formula: see text] and [Formula: see text]. The most important finding is that by changing the polarization of incident light, it is possible to increase the absorption coefficients of [Formula: see text] and [Formula: see text] valleys by up to 30 times. For light propagation direction close to perpendicular to the plane of the superlattice, the right-circular polarization is absorbed only by [Formula: see text] valley in contrast to the left-circular polarization, which is absorbed by the [Formula: see text] valley. Our model might be used to design newly developed 2D optovalleytronic devices.

Heterostructure Engineering of 2D Superlattice Materials for Electrocatalysis

Exploring low-cost and high-efficient electrocatalyst is an exigent task in developing novel sustainable energy conversion systems, such as fuel cells and electrocatalytic fuel generations. 2D materials, specifically 2D superlattice materials focused here, featured highly accessible active areas, high density of active sites, and high compatibility with property-complementary materials to form heterostructures with desired synergetic effects, have demonstrated to be promising electrocatalysts for boosting the performance of sustainable energy conversion and storage devices. Nevertheless, the reaction kinetics, and in particular, the functional mechanisms of the 2D superlattice-based catalysts yet remain ambiguous. In this review, based on the recent progress of 2D superlattice materials in electrocatalysis applications, the rational design and fabrication of 2D superlattices are first summarized and the application of 2D superlattices in electrocatalysis is then specifically discussed. Finally, perspectives on the current challenges and the strategies for the future design of 2D superlattice materials are outlined. This review attempts to establish an intrinsic correlation between the 2D superlattice heterostructures and the catalytic properties, so as to provide some insights into developing high-performance electrocatalysts for next-generation sustainable energy conversion and storage.

An image interaction approach to quantum-phase engineering of two-dimensional materials

Tuning electrical, optical, and thermal material properties is central for engineering and understanding solid-state systems. In this scenario, atomically thin materials are appealing because of their sensitivity to electric and magnetic gating, as well as to interlayer hybridization. Here, we introduce a radically different approach to material engineering relying on the image interaction experienced by electrons in a two-dimensional material when placed in proximity of an electrically neutral structure. We theoretically show that electrons in a semiconductor atomic layer acquire a quantum phase resulting from the image potential induced by the presence of a neighboring periodic array of conducting ribbons, which in turn modifies the optical, electrical, and thermal properties of the monolayer, giving rise to additional interband optical absorption, plasmon hybridization, and metal-insulator transitions. Beyond its fundamental interest, material engineering based on the image interaction represents a disruptive approach to tailor the properties of atomic layers for application in nanodevices.

Controllable Edge Epitaxy of Helical GeSe/GeS Heterostructures

Emerging twistronics based on van der Waals (vdWs) materials has attracted great interest in condensed matter physics. Recently, more neoteric three-dimensional (3D) architectures with interlayer twist are realized in germanium sulfide (GeS) crystals. Here, we further demonstrate a convenient way for tailoring the twist rate of helical GeS crystals via tuning of the growth temperature. Under higher growth temperatures, the twist angles between successive nanoplates of the GeS mesowires (MWs) are statistically smaller, which can be understood by the dynamics of the catalyst during the growth. Moreover, we fabricate self-assembled helical heterostructures by introducing germanium selenide (GeSe) onto helical GeS crystals via edge epitaxy. Besides the helical architecture, the moiré superlattices at the twisted interfaces are also inherited. Compared with GeS MWs, helical GeSe/GeS heterostructures exhibit improved electrical conductivity and photoresponse. These results manifest new opportunities in future electronics and optoelectronics by harnessing 3D twistronics based on vdWs materials.

Emerging Phases of Layered Metal Chalcogenides

Layered metal chalcogenides, as a "rich" family of 2D materials, have attracted increasing research interest due to the abundant choices of materials with diverse structures and rich electronic characteristics. Although the common metal chalcogenide phases such as 2H and 1T have been intensively studied, many other unusual phases are rarely explored, and some of these show fascinating behaviors including superconductivity, ferroelectrics, ferromagnetism, etc. From this perspective, the unusual phases of metal chalcogenides and their characteristics, as well as potential applications are introduced. First, the unusual phases of metal chalcogenides from different classes, including transition metal dichalcogenides, magnetic element-based chalcogenides, and metal phosphorus chalcogenides, are discussed, respectively. Meanwhile, their excellent properties of different unusual phases are introduced. Then, the methods for producing the unusual phases are discussed, specifically, the stabilization strategies during the chemical vapor deposition process for the unusual phase growth are discussed, followed by an outlook and discussions on how to prepare the unusual phase metal dichalcogenides in terms of synthetic methodology and potential applications.

Quantum well states and sizable Rashba splitting on Pb induced α-phase Bi/Si(111) surface reconstruction

Quantum well states (QWSs) with sizable Rashba splitting are a promising quantum phase to achieve spin-split current for quantum computing and spintronics due to their controllable band structures. However, most QWSs were achieved upon metallic substrates with strong bulk electron transport. Developing semiconductor-based QWSs is preferable to minimize substrate interference. Here we report a Pb induced surface reconstruction on Bi/Si(111) α phase. Combining scanning tunneling microscopy (STM) and density functional theory (DFT) the atomic structure has been determined. QWSs and a sizable Rashba band splitting are predicted, with the latter comparable to what is found in other semiconductor heterostructures and an order of magnitude higher than that in Pb/Si(111) QWSs.

Preparation Engineering of Two-Dimensional Heterostructures via Bottom-Up Growth for Device Applications

Two-dimensional heterostructures with tremendous electronic and optoelectronic properties hold great promise for nanodevice integrations and applications owing to the wide tunable characteristics. Toward this end, developing construction strategies in allusion to large-scale production of high-quality heterostructures is critical. The mainstream preparation routes are representatively classified into two categories of top-down and bottom-up approaches. Nonetheless, the relatively low reproductivity and the limitation for lateral heterostructure formations of top-down methods at the present stage inherently impeded their further developments. To surmount these obstacles, assembling heterostructures via miscellaneous bottom-up preparation protocols has emerged as a potential solution, attributed to the controllability and clean interface. Three typical approaches of chemical/physical vapor deposition, solution synthesis, and growth under ultrahigh vacuum conditions have shown promise due to the possibilities for preparing heterostructures with predesigned structures, clean interfaces, and the like. Therefore, bottom-up preparation engineering of heterostructures in two dimensions for further device applications is of vital importance. Moreover, heterostructure integrations by these methods have experienced a period of flourishing development in the past few years. In this review, the classical bottom-up growth routes, characterization methods, and latest progress of diverse heterostructures and further device applications are overviewed. Finally, the challenges and opportunities are discussed.

Low-Toxic, Earth-Abundant Nanostructured Materials for Thermoelectric Applications

This article presents recent research directions in the study of Earth-abundant, cost-effective, and low-toxic advanced nanostructured materials for thermoelectric generator (TEG) applications. This study's critical aspect is to systematically evaluate the development of high-performance nanostructured thermoelectric (TE) materials from sustainable sources, which are expected to have a meaningful and enduring impact in developing a cost-effective TE system. We review both the performance and limitation aspects of these materials at multiple temperatures from experimental and theoretical viewpoints. Recent developments in these materials towards enhancing the dimensionless figure of merit, Seebeck coefficient, reduction of the thermal conductivity, and improvement of electrical conductivity have also been discussed in detail. Finally, the future direction and the prospects of these nanostructured materials have been proposed.

Formation of Highly Doped Nanostripes in 2D Transition Metal Dichalcogenides via a Dislocation Climb Mechanism

Doping of materials beyond the dopant solubility limit remains a challenge, especially when spatially nonuniform doping is required. In 2D materials with a high surface-to-volume ratio, such as transition metal dichalcogenides, various post-synthesis approaches to doping have been demonstrated, but full control over spatial distribution of dopants remains a challenge. A post-growth doping of single layers of WSe₂ is performed by adding transition metal (TM) atoms in a two-step process, which includes annealing followed by deposition of dopants together with Se or S. The Ti, V, Cr, and Fe impurities at W sites are identified by using transmission electron microscopy and electron energy loss spectroscopy. Remarkably, an extremely high density (6.4-15%) of various types of impurity atoms is achieved. The dopants are revealed to be largely confined within nanostripes embedded in the otherwise pristine WSe₂ . Density functional theory calculations show that the dislocations assist the incorporation of the dopant during their climb and give rise to stripes of TM dopant atoms. This work demonstrates a possible spatially controllable doping strategy to achieve the desired local electronic, magnetic, and optical properties in 2D materials.

Advanced Thermoelectric Design: From Materials and Structures to Devices

The long-standing popularity of thermoelectric materials has contributed to the creation of various thermoelectric devices and stimulated the development of strategies to improve their thermoelectric performance. In this review, we aim to comprehensively summarize the state-of-the-art strategies for the realization of high-performance thermoelectric materials and devices by establishing the links between synthesis, structural characteristics, properties, underlying chemistry and physics, including structural design (point defects, dislocations, interfaces, inclusions, and pores), multidimensional design (quantum dots/wires, nanoparticles, nanowires, nano- or microbelts, few-layered nanosheets, nano- or microplates, thin films, single crystals, and polycrystalline bulks), and advanced device design (thermoelectric modules, miniature generators and coolers, and flexible thermoelectric generators). The outline of each strategy starts with a concise presentation of their fundamentals and carefully selected examples. In the end, we point out the controversies, challenges, and outlooks toward the future development of thermoelectric materials and devices. Overall, this review will serve to help materials scientists, chemists, and physicists, particularly students and young researchers, in selecting suitable strategies for the improvement of thermoelectrics and potentially other relevant energy conversion technologies.

Interlayer Bonding in Two-Dimensional Materials: The Special Case of SnP3 and GeP3

Stacked two-dimensional (2D) heterostructures are evolving as the "next-generation" optoelectronic materials because of the possibility of designing atomically thin devices with outstanding characteristics. However, most of the existing 2D heterostructures are governed by weak van der Waals interlayer interactions that, as often is the case, exert limited impact on the resulting properties of heterostructures relative to their constituting components. In this work, we investigate the optoelectronic properties of a novel class of 2D MP₃ (M = Ge and Sn) materials featuring strong interlayer interactions, applying a robust theoretical framework combining density functional theory and many-body perturbation theory. We demonstrate that the remarkable intrinsic vertical strain (of ∼40% relative to the monolayers) promotes the exfoliation of these materials into bilayers and profoundly impacts their electronic structure, charge transport, and optical properties. Most strikingly, we observe that the strong interlayer hybridization indicates continuous optical absorption across the entire visible range that, together with high charge carrier mobility, makes these 2D MP₃ heterostructures attractive for photoconversion applications.

Valley Polarization and Valleyresistance in a Monolayer Transition Metal Dichalcogenide Superlattice

A significant, fundamental challenge in the field of valleytronics is how to generate and regulate valley-polarized currents in practical ways. Here, we discover a new mechanism for producing valley polarization in a monolayer transition metal dichalcogenide superlattice, in which valley-resolved gaps are formed at the supercell Brillouin zone boundaries and centers due to intervalley scattering. When the incident energy of the electron lies in the gaps, the available states are valley polarized, thus providing a valley-polarized current from the superlattice. We show that the direction and strength of the valley polarization may be further tuned by varying the potential applied to the superlattice. The transmission can have a net valley polarization of 55% for a four-period heterostructure. Moreover, two such valley filters in series may function as an electrostatically controlled giant valleyresistance device, representing a zero-magnetic field counterpart to the familiar giant magnetoresistance device.

Selective Growth of WSe2 with Graphene Contacts

Nanoelectronics of two-dimensional (2D) materials and related applications are hindered with critical contact issues with the semiconducting monolayers. To solve these issues, a fundamental challenge is selective and controllable fabrication of p-type or ambipolar transistors with a low Schottky barrier. Most p-type transistors are demonstrated with tungsten selenides (WSe₂) but a high growth temperature is required. Here, we utilize seeding promoter and low pressure CVD process to enhance sequential WSe₂ growth with a reduced growth temperature of 800 °C for reduced compositional fluctuations and high hetero-interface quality. Growth behavior of the sequential WSe₂ growth at the edge of patterned graphene is discussed. With optimized growth conditions, high-quality interface of the laterally stitched WSe₂-graphene is achieved and characterized with transmission electron microscopy (TEM). Device fabrication and electronic performances of the laterally stitched WSe₂-graphene are presented.

Strain-driven growth of ultra-long two-dimensional nano-channels

Lateral heterostructures of two-dimensional transition metal dichalcogenides (TMDs) have offered great opportunities in the engineering of monolayer electronics, catalysis and optoelectronics. To explore the full potential of these materials, developing methods to precisely control the spatial scale of the heterostructure region is crucial. Here, we report the synthesis of ultra-long MoS₂ nano-channels with several micrometer length and 2–30 nanometer width within the MoSe₂ monolayers, based on intrinsic grain boundaries (GBs). First-principles calculations disclose that the strain fields near the GBs not only lead to the preferred substitution of selenium by sulfur but also drive coherent extension of the MoS₂ channel from the GBs. Such a strain-driven synthesis mechanism is further shown applicable to other topological defects. We also demonstrate that the spontaneous strain of MoS₂ nano-channels can further improve the hydrogen production activity of GBs, paving the way for designing GB based high-efficient TMDs in the catalytic application.

Controlled growth of heterostructures within 10 nm scale is crucial for potential applications of transition metal dichalcogenides. Here, the authors report strain-driven synthesis of ultra-long MoS₂ nano-channels having several micrometers length and 2–30 nm width embedded within MoSe₂ monolayer.

Inlaid ReS2 Quantum Dots in Monolayer MoS2

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) are prospective materials for quantum devices owing to their inherent 2D confinements. They also provide a platform to realize even lower-dimensional in-plane electron confinement, for example, 0D quantum dots, for exotic physical properties. However, fabrication of such laterally confined monolayer (1L) nanostructure in 1L crystals remains challenging. Here we report the realization of 1L ReS₂ quantum dots epitaxially inlaid in 1L MoS₂ by a two-step chemical vapor deposition method combining with plasma treatment. The lateral lattice mismatch between ReS₂ and MoS₂ leads to size-dependent crystal structure evolution and in-plane straining of the 1L ReS₂ quantum dots. Optical spectroscopies reveal the abnormal charge transfer between the 1L ReS₂ quantum dots and the MoS₂ matrix, resulting from electron trapping in the 1L ReS₂ quantum dots. This study may shed light on the development of in-plane quantum-confined devices in 2D materials for potential applications in quantum information.

Strain Relaxation in Misfitting Transition Metal Dichalcogenide Monolayer Superlattices: Wrinkling vs Misfit Dislocation Formation

Two-dimensional (2D) superlattices composed of chemically heterogeneous transition-metal dichalcogenides (TMDs) have been proposed as key components in next-generation optoelectronic devices. For potential applications, coherent, defect-free compositional interfaces are usually required. In this paper, a combination of scaling theory and numerical analysis is employed to investigate strain relaxation mechanisms in misfitting, chemically heterogeneous TMDs. We demonstrate that, in free-standing superlattices, wrinkling of the monolayer is asymptotically preferred over misfit dislocation formation in both binary and ternary superlattices. For substrate-supported monolayers, however, misfit dislocation formation is thermodynamically favored above a critical superlattice width, implying the presence of an upper limit to the thermodynamic stability of coherent, misfitting 2D superlattices. Finally, it is shown numerically that the critical superlattice width is only weakly dependent on the misfit.

Superlattices based on van der Waals 2D materials

Two-dimensional (2D) materials exhibit a number of improved mechanical, optical, and electronic properties compared to their bulk counterparts. The absence of dangling bonds in the cleaved surfaces of these materials allows combining different 2D materials into van der Waals heterostructures to fabricate p-n junctions, photodetectors, and 2D-2D ohmic contacts that show unexpected performances. These intriguing results are regularly summarized in comprehensive reviews. A strategy to tailor their properties even further and to observe novel quantum phenomena consists in the fabrication of superlattices whose unit cell is formed either by two dissimilar 2D materials or by a 2D material subjected to a periodic perturbation, each component contributing with different characteristics. Furthermore, in a 2D material-based superlattice, the interlayer interaction between the layers mediated by van der Waals forces constitutes a key parameter to tune the global properties of the superlattice. The above-mentioned factors reflect the potential to devise countless combinations of van der Waals 2D material-based superlattices. In the present feature article, we explain in detail the state-of-the-art of 2D material-based superlattices and describe the different methods to fabricate them, classified as vertical stacking, intercalation with atoms or molecules, moiré patterning, strain engineering and lithographic design. We also aim to highlight some of the specific applications of each type of superlattices.

Engineering Zero-Dimensional Quantum Confinement in Transition-Metal Dichalcogenide Heterostructures

Achieving robust, localized quantum states in two-dimensional (2D) materials like graphene is desirable for optoelectronics and quantum information yet challenging due to the difficulties in confining Dirac fermions. Traditional colloidal nanoparticle and epitaxially grown quantum dots are also impractical for solid-state devices, due to either complex surface chemistry, unreliable spatial positioning, or lack of electrical and optical access. In this work, we design and optimize nanoscale monolayer transition-metal dichalcogenide (TMD) heterostructures to natively host massive Dirac fermion bound states. We develop an integrated multiscale approach to translate first-principles electronic structure to higher length scales, where we apply a continuum model to consider arbitrary 2D quantum dot geometries and sizes. Focusing on a model system of an MoS₂ quantum dot in a WS₂ matrix (MoS₂/WS₂), we find discrete bound states in triangular dots with side lengths up to 20 nm. We propose figures of merit that, when optimized for, result in heterostructure configurations engineered for maximally isolated bound states at room temperature. These design principles apply to the entire family of semiconducting TMD materials, and we predict 6.5 nm MoS₂/WS₂ (quantum dot/matrix) triangular dots and 4.5 nm MoSe₂/WSe₂ triangular dots as ideal systems for confining massive Dirac fermions.

Epitaxial growth and physical properties of 2D materials beyond graphene: from monatomic materials to binary compounds

This review highlights the recent advances of epitaxial growth of 2D materials beyond graphene.