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Choi GS, Park S, An ES, Bae J, Shin I, Kang BT, Won CJ, Cheong SW, Lee HW, Lee GH, Cho WJ, Kim JS. Highly Efficient Room-Temperature Spin-Orbit-Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2400893. [PMID: 38520060 DOI: 10.1002/advs.202400893] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Indexed: 03/25/2024]
Abstract
All-Van der Waals (vdW)-material-based heterostructures with atomically sharp interfaces offer a versatile platform for high-performing spintronic functionalities at room temperature. One of the key components is vdW topological insulators (TIs), which can produce a strong spin-orbit-torque (SOT) through the spin-momentum locking of their topological surface state (TSS). However, the relatively low conductance of the TSS introduces a current leakage problem through the bulk states of the TI or the adjacent ferromagnetic metal layers, reducing the interfacial charge-to-spin conversion efficiency (qICS). Here, a vdW heterostructure is used consisting of atomically-thin layers of a bulk-insulating TI Sn-doped Bi1.1Sb0.9Te2S1 and a room-temperature ferromagnet Fe3GaTe2, to enhance the relative current ratio on the TSS up to ≈20%. The resulting qICS reaches ≈1.65 nm-1 and the critical current density Jc ≈0.9 × 106 Acm-2 at 300 K, surpassing the performance of TI-based and heavy-metal-based SOT devices. These findings demonstrate that an all-vdW heterostructure with thickness optimization offers a promising platform for efficient current-controlled magnetization switching at room temperature.
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Affiliation(s)
- Gyu Seung Choi
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
| | - Sungyu Park
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Eun-Su An
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
| | - Juhong Bae
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Inseob Shin
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Beom Tak Kang
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
| | - Choong Jae Won
- Center for Complex Phase of Materials, Max Planck POSTECH/Korea Research Initiative, Pohang, 37673, Republic of Korea
- Laboratory for Pohang Emergent Materials, Department of Physics, POSTECH, Pohang, 37673, Republic of Korea
| | - Sang-Wook Cheong
- Center for Complex Phase of Materials, Max Planck POSTECH/Korea Research Initiative, Pohang, 37673, Republic of Korea
- Laboratory for Pohang Emergent Materials, Department of Physics, POSTECH, Pohang, 37673, Republic of Korea
- Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ, 08854, USA
| | - Hyun-Woo Lee
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Gil-Ho Lee
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Won Joon Cho
- Device Research Center, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics Co., Ltd, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Republic of Korea
| | - Jun Sung Kim
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
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Huang L, Liao L, Qiu H, Chen X, Bai H, Han L, Zhou Y, Su Y, Zhou Z, Pan F, Jin B, Song C. Antiferromagnetic magnonic charge current generation via ultrafast optical excitation. Nat Commun 2024; 15:4270. [PMID: 38769299 PMCID: PMC11106255 DOI: 10.1038/s41467-024-48391-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Accepted: 04/30/2024] [Indexed: 05/22/2024] Open
Abstract
Néel spin-orbit torque allows a charge current pulse to efficiently manipulate the Néel vector in antiferromagnets, which offers a unique opportunity for ultrahigh density information storage with high speed. However, the reciprocal process of Néel spin-orbit torque, the generation of ultrafast charge current in antiferromagnets has not been demonstrated. Here, we show the experimental observation of charge current generation in antiferromagnetic metallic Mn2Au thin films using ultrafast optical excitation. The ultrafast laser pulse excites antiferromagnetic magnons, resulting in instantaneous non-equilibrium spin polarization at the antiferromagnetic spin sublattices with broken spatial symmetry. Then the charge current is generated directly via spin-orbit fields at the two sublattices, which is termed as the reciprocal phenomenon of Néel spin-orbit torque, and the associated THz emission can be detected at room temperature. Besides the fundamental significance on the Onsager reciprocity, the observed magnonic charge current generation in antiferromagnet would advance the development of antiferromagnetic THz emitter.
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Affiliation(s)
- Lin Huang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Liyang Liao
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, China
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan
| | - Hongsong Qiu
- Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing, China
| | - Xianzhe Chen
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Hua Bai
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Lei Han
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Yongjian Zhou
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Yichen Su
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Zhiyuan Zhou
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Biaobing Jin
- Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing, China.
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, China.
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Wang C, Du Y, Zhao Y, He Z, Wang S, Zhang Y, Jiang Y, Du Y, Wu J, Jiang Z, Liu M. Solar-Powered Switch of Antiferromagnetism/Ferromagnetism in Flexible Spintronics. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:3158. [PMID: 38133055 PMCID: PMC10745959 DOI: 10.3390/nano13243158] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2023] [Revised: 12/13/2023] [Accepted: 12/15/2023] [Indexed: 12/23/2023]
Abstract
The flexible electronics have application prospects in many fields, including as wearable devices and in structural detection. Spintronics possess the merits of a fast response and high integration density, opening up possibilities for various applications. However, the integration of miniaturization on flexible substrates is impeded inevitably due to the high Joule heat from high current density (1012 A/m2). In this study, a prototype flexible spintronic with device antiferromagnetic/ferromagnetic heterojunctions is proposed. The interlayer coupling strength can be obviously altered by sunlight soaking via direct photo-induced electron doping. With the assistance of a small magnetic field (±125 Oe), the almost 180° flip of magnetization is realized. Furthermore, the magnetoresistance changes (15~29%) of flexible spintronics on fingers receiving light illumination are achieved successfully, exhibiting the wearable application potential. Our findings develop flexible spintronic sensors, expanding the vision for the novel generation of photovoltaic/spintronic devices.
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Affiliation(s)
- Chenying Wang
- State Key Laboratory for Manufacturing Systems Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, School of Instrument Science and Technology, Xi’an Jiaotong University, Xi’an 710049, China;
| | - Yujing Du
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China; (Y.D.); (Z.H.); (Y.J.); (Y.D.); (J.W.)
| | - Yifan Zhao
- State Key Laboratory for Manufacturing Systems Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, School of Instrument Science and Technology, Xi’an Jiaotong University, Xi’an 710049, China;
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China; (Y.D.); (Z.H.); (Y.J.); (Y.D.); (J.W.)
| | - Zhexi He
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China; (Y.D.); (Z.H.); (Y.J.); (Y.D.); (J.W.)
| | - Song Wang
- State Key Laboratory for Manufacturing Systems Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, School of Mechanical Engineering, Xi’an Jiaotong University, Xi’an 710049, China; (S.W.); (Y.Z.); (Z.J.)
| | - Yaxin Zhang
- State Key Laboratory for Manufacturing Systems Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, School of Mechanical Engineering, Xi’an Jiaotong University, Xi’an 710049, China; (S.W.); (Y.Z.); (Z.J.)
| | - Yuxuan Jiang
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China; (Y.D.); (Z.H.); (Y.J.); (Y.D.); (J.W.)
| | - Yongjun Du
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China; (Y.D.); (Z.H.); (Y.J.); (Y.D.); (J.W.)
| | - Jingen Wu
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China; (Y.D.); (Z.H.); (Y.J.); (Y.D.); (J.W.)
| | - Zhuangde Jiang
- State Key Laboratory for Manufacturing Systems Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, School of Mechanical Engineering, Xi’an Jiaotong University, Xi’an 710049, China; (S.W.); (Y.Z.); (Z.J.)
| | - Ming Liu
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China; (Y.D.); (Z.H.); (Y.J.); (Y.D.); (J.W.)
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Chen C, Han L, Liu P, Zhang Y, Liang S, Zhou Y, Zhu W, Fu S, Pan F, Song C. Direct-Current Electrical Detection of Surface-Acoustic-Wave-Driven Ferromagnetic Resonance. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2302454. [PMID: 37306652 DOI: 10.1002/adma.202302454] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/16/2023] [Revised: 06/06/2023] [Indexed: 06/13/2023]
Abstract
Surface acoustic waves (SAW) provide a promising platform to study spin-phonon coupling, which can be achieved by SAW-driven ferromagnetic resonance (FMR) for efficient acoustic manipulation of spin. Although the magneto-elastic effective field model has achieved great success in describing SAW-driven FMR, the magnitude of the effective field acting on the magnetization induced by SAW still remains hard to access. Here, by integrating ferromagnetic stripes with SAW devices, direct-current detection for SAW-driven FMR based on electrical rectification is reported. By analyzing FMR rectified voltage, the effective fields are straightforwardly characterized and extracted, which exhibits the advantages of better integration compatibility and lower cost than traditional methods such as vector-network analyzer-based techniques. A large nonreciprocal rectified voltage is obtained, which is attributed to the coexistence of in-plane and out-of-plane effective fields. The effective fields can be modulated by controlling the longitudinal and shear strains within the films to achieve almost 100% nonreciprocity ratio, demonstrating the potential for electrical switches. Besides its fundamental significance, this finding provides a unique opportunity for a designable spin acousto-electronic device and its convenient signal readout.
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Affiliation(s)
- Chong Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Lei Han
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Peisen Liu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Yichi Zhang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Shixuan Liang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Yongjian Zhou
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Wenxuan Zhu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Sulei Fu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
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