THz induced giant spin and valley currents

Direct coupling of light to valley current

The coupling of circularly polarized light to local band structure extrema ("valleys") in two dimensional semiconductors promises a new electronics based on the valley degree of freedom. Such pulses, however, couple only to valley charge and not to the valley current, precluding lightwave manipulation of this second vital element of valleytronic devices. Contradicting this established wisdom, we show that the few cycle limit of circularly polarized light is imbued with an emergent vectorial character that allows direct coupling to the valley current. The underlying physical mechanism involves the emergence of a momentum space valley dipole, the orientation and magnitude of which allows complete control over the direction and magnitude of the valley current. We demonstrate this effect via minimal tight-binding models both for the visible spectrum gaps of the transition metal dichalcogenides (generation time  ~ 1 fs) as well as the infrared gaps of biased bilayer graphene ( ~ 14 fs); we further verify our findings with state-of-the-art time-dependent density functional theory incorporating transient excitonic effects. Our findings both mark a striking example of emergent physics in the ultrafast limit of light-matter coupling, as well as allowing the creation of valley currents on time scales that challenge quantum decoherence in matter.

Electrical Control of the Valley-Layer Hall Effect in Ferromagnetic Bilayer Lattices

The layertronics based on the layer degree of freedom are of essential significance for the construction and application of new-generation electronic devices. Although the Hall layer effect has been realized theoretically and experimentally, it is mainly based on topological and antiferromagnetic lattices. On the basis of the low-energy effective k·p model, the mechanism of the controllable valley-layer Hall effect (V-LHE) in a bilayer ferromagnetic lattice through interlayer sliding has been proposed. Due to the broken time-reversal and inversion symmetries, the V-LHE based on the valley, layer degree of freedom, ferromagnetism, and ferroelectricity can be predicted. In addition, valley and layer indexes can be controlled by magnetization orientation and slipping, respectively. The mechanism can be demonstrated in the real bilayer CrSI lattice through first-principles calculations. Moreover, V-LHE can be effectively tuned by the perpendicular external electric field in configurations without out-of-plane polarization. These findings provide a new platform for the research of valleytronics and layertronics.

Tracking electron motion within and outside of Floquet bands from attosecond pulse trains in time-resolved ARPES

Floquet engineering has recently emerged as a technique for controlling material properties with light. Floquet phases can be probed with time- and angle-resolved photoelectron spectroscopy (Tr-ARPES), providing direct access to the laser-dressed electronic bands. Applications of Tr-ARPES to date focused on observing the Floquet-Bloch bands themselves, and their build-up and dephasing on sub-laser-cycle timescales. However, momentum and energy resolved sub-laser-cycle dynamics between Floquet bands have not been analyzed. Given that Floquet theory strictly applies in time-periodic conditions, the notion of resolving sub-laser-cycle dynamics between Floquet states seems contradictory-it requires probe pulse durations below a laser cycle that inherently cannot discern the time-periodic nature of the light-matter system. Here we propose to employ attosecond pulse train probes with the same temporal periodicity as the Floquet-dressing pump pulse, allowing both attosecond sub-laser-cycle resolution and a proper projection of Tr-ARPES spectra on the Floquet-Bloch bands. We formulate and employ this approach inab-initiocalculations in light-driven graphene. Our calculations predict significant sub-laser-cycle dynamics occurring within the Floquet phase with the majority of electrons moving within and in-between Floquet bands, and a small portion residing and moving outside of them in what we denote as 'non-Floquet' bands. We establish that non-Floquet bands arise from the pump laser envelope that induces non-adiabatic electronic excitations during the pulse turn-on and turn-off. By performing calculations in systems with poly-chromatic pumps we also show that Floquet states are not formed on a sub-laser-cycle level. This work indicates that the Floquet-Bloch states are generally not a complete basis set for sub-laser-cycle dynamics in steady-state phases of matter.

Light-Shaping of Valley States

The established paradigm to create valley states, excitations at local band extrema ("valleys"), is through selective occupation of specific valleys via circularly polarized laser pulses. Here we show a second way exists to create valley states, not by valley population imbalance but by "light-shaping" in momentum space, i.e. controlling the shape of the distribution of excited charge at each valley. While noncontrasting in valley charge, such valley states are instead characterized by a valley current, identically zero at one valley and finite and large at the other. We demonstrate that these (i) are robust to quantum decoherence, (ii) allow lossless toggling of the valley state with successive femtosecond laser pulses, and (iii) permit valley contrasting excitation both with and without a gap. Our findings open a route to robust ultrafast and switchable valleytronics in a wide scope of 2d materials, bringing closer the promise of valley-based electronics.

Mapping Light-Dressed Floquet Bands by Highly Nonlinear Optical Excitations and Valley Polarization

Ultrafast nonlinear optical phenomena in solids have been attracting a great deal of interest as novel methodologies for the femtosecond spectroscopy of electron dynamics and control of the properties of materials. Here, we theoretically investigate strong-field nonlinear optical transitions in a prototypical two-dimensional material, hBN, and show that the k-resolved conduction band charge occupation patterns induced by an elliptically polarized laser can be understood in a multiphoton resonant picture, but, remarkably, only if using the Floquet light-dressed states instead of the undressed matter states. Our work demonstrates that Floquet dressing affects ultrafast charge dynamics and photoexcitation even from a single pump pulse and establishes a direct measurable signature for band dressing in nonlinear optical processes in solids, opening new paths for ultrafast spectroscopy and valley manipulation.