Optical Signatures of Coupled Quantum Dots

Electric-field-induced colour switching in colloidal quantum dot molecules at room temperature

Colloidal semiconductor quantum dots are robust emitters implemented in numerous prototype and commercial optoelectronic devices. However, active fluorescence colour tuning, achieved so far by electric-field-induced Stark effect, has been limited to a small spectral range, and accompanied by intensity reduction due to the electron-hole charge separation effect. Utilizing quantum dot molecules that manifest two coupled emission centres, we present a unique electric-field-induced instantaneous colour-switching effect. Reversible emission colour switching without intensity loss is achieved on a single-particle level, as corroborated by correlated electron microscopy imaging. Simulations establish that this is due to the electron wavefunction toggling between the two centres, induced by the electric field, and affected by the coupling strength. Quantum dot molecules manifesting two coupled emission centres may be tailored to emit distinct colours, opening the path for sensitive field sensing and colour-switchable devices such as a novel pixel design for displays or an electric-field-induced colour-tunable single-photon source.

Two Biexciton Types Coexisting in Coupled Quantum Dot Molecules

Coupled colloidal quantum dot molecules (CQDMs) are an emerging class of nanomaterials, manifesting two coupled emission centers and thus introducing additional degrees of freedom for designing quantum-dot-based technologies. The properties of multiply excited states in these CQDMs are crucial to their performance as quantum light emitters, but they cannot be fully resolved by existing spectroscopic techniques. Here we study the characteristics of biexcitonic species, which represent a rich landscape of different configurations essentially categorized as either segregated or localized biexciton states. To this end, we introduce an extension of Heralded Spectroscopy to resolve the different biexciton species in the prototypical CdSe/CdS CQDM system. By comparing CQDMs with single quantum dots and with nonfused quantum dot pairs, we uncover the coexistence and interplay of two distinct biexciton species: A fast-decaying, strongly interacting biexciton species, analogous to biexcitons in single quantum dots, and a long-lived, weakly interacting species corresponding to two nearly independent excitons. The two biexciton types are consistent with numerical simulations, assigning the strongly interacting species to two excitons localized at one side of the quantum dot molecule and the weakly interacting species to excitons segregated to the two quantum dot molecule sides. This deeper understanding of multiply excited states in coupled quantum dot molecules can support the rational design of tunable single- or multiple-photon quantum emitters.

Controlled Coherent Coupling in a Quantum Dot Molecule Revealed by Ultrafast Four-Wave Mixing Spectroscopy

Semiconductor quantum dot molecules are considered promising candidates for quantum technological applications due to their wide tunability of optical properties and coverage of different energy scales associated with charge and spin physics. While previous works have studied the tunnel-coupling of the different excitonic charge complexes shared by the two quantum dots by conventional optical spectroscopy, we here report on the first demonstration of a coherently controlled interdot tunnel-coupling focusing on the quantum coherence of the optically active trion transitions. We employ ultrafast four-wave mixing spectroscopy to resonantly generate a quantum coherence in one trion complex, transfer it to and probe it in another trion configuration. With the help of theoretical modeling on different levels of complexity, we give an instructive explanation of the underlying coupling mechanism and dynamical processes.

Enhanced Spin Coherence of a Self-Assembled Quantum Dot Molecule at the Optimal Electrical Bias

A pair of coupled dots with one electron in each dot can provide improvements in spin coherence, particularly at an electrical bias called the "sweet spot," but few measurements have been performed on self-assembled dots in this regime. Here, we directly measure the T_{2}^{*} coherence time of the singlet-triplet states in this system as a function of bias and magnetic field, obtaining a maximum T_{2}^{*} of 60 ns, more than an order of magnitude higher than an electron spin in a single quantum dot. Our results uncover two main dephasing mechanisms: electrical noise away from the sweet spot, and a magnetic field dependent interaction with nuclear spins due to a difference in g factors.

Magnetic tuning of tunnel coupling between InAsP double quantum dots in InP nanowires

We study experimentally and theoretically the in-plane magnetic field dependence of the coupling between dots forming a vertically stacked double dot molecule. The InAsP molecule is grown epitaxially in an InP nanowire and interrogated optically at millikelvin temperatures. The strength of interdot tunneling, leading to the formation of the bonding-antibonding pair of molecular orbitals, is investigated by adjusting the sample geometry. For specific geometries, we show that the interdot coupling can be controlled in-situ using a magnetic field-mediated redistribution of interdot coupling strengths. This is an important milestone in the development of qubits required in future quantum information technologies.

Electrically tunable Feshbach resonances in twisted bilayer semiconductors

[Figure: see text].

Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

Axially stacked quantum dots (QDs) in nanowires (NWs) have important applications in nanoscale quantum devices and lasers. However, there is lack of study of defect-free growth and structure optimization using the Au-free growth mode. We report a detailed study of self-catalyzed GaAsP NWs containing defect-free axial GaAs QDs (NWQDs). Sharp interfaces (1.8-3.6 nm) allow closely stack QDs with very similar structural properties. High structural quality is maintained when up to 50 GaAs QDs are placed in a single NW. The QDs maintain an emission line width of <10 meV at 140 K (comparable to the best III-V QDs, including nitrides) after having been stored in an ambient atmosphere for over 6 months and exhibit deep carrier confinement (∼90 meV) and the largest reported exciton-biexciton splitting (∼11 meV) for non-nitride III-V NWQDs. Our study provides a solid foundation to build high-performance axially stacked NWQD devices that are compatible with CMOS technologies.

Coupled Colloidal Quantum Dot Molecules

Electronic coupling and hence hybridization of atoms serves as the basis for the rich properties for the endless library of naturally occurring molecules. Colloidal quantum dots (CQDs) manifesting quantum strong confinement possess atomic-like characteristics with s and p electronic levels, which popularized the notion of CQDs as artificial atoms. Continuing this analogy, when two atoms are close enough to form a molecule so that their orbitals start overlapping, the orbitals energies start to split into bonding and antibonding states made out of hybridized orbitals. The same concept is also applicable for two fused core–shell nanocrystals in close proximity. Their band edge states, which dictate the emitted photon energy, start to hybridize, changing their electronic and optical properties. Thus, an exciting direction of “artificial molecules” emerges, leading to a multitude of possibilities for creating a library of new hybrid nanostructures with novel optoelectronic properties with relevance toward diverse applications including quantum technologies.

The controlled separation and the barrier height between two adjacent quantum dots are key variables for dictating the magnitude of the coupling energy of the confined wave functions. In the past, coupled double quantum dot architectures prepared by molecular beam epitaxy revealed a coupling energy of few millielectron volts, which limits the applications to mostly cryogenic operation. The realization of artificial quantum molecules with sufficient coupling energy detectable at room temperature calls for the use of colloidal semiconductor nanocrystal building blocks. Moreover, the tunable surface chemistry widely opens the predesigned attachment strategies as well as the solution processing ability of the prepared artificial molecules, making the colloidal nanocrystals as an ideal candidate for this purpose. Despite several approaches that demonstrated enabling of the coupled structures, a general and reproducible method applicable to a broad range of colloidal quantum materials is needed for systematic tailoring of the coupling strength based on a dictated barrier

This Account addresses the development of nanocrystal chemistry to create coupled colloidal quantum dot molecules and to study the controlled electronic coupling and their emergent properties. The simplest nanocrystal molecule, a homodimer formed from two core/shell nanocrystal monomers, in analogy to homonuclear diatomic molecules, serves as a model system. The shell material of the two CQDs is structurally fused, resulting in a continuous crystal. This lowers the potential energy barrier, enabling the hybridization of the electronic wave functions. The direct manifestation of the hybridization reflects on the band edge transition shifting toward lower energy and is clearly resolved at room temperature. The hybridization energy within the single homodimer molecule is strongly correlated with the extent of structural continuity, the delocalization of the exciton wave function, and the barrier thickness as calculated numerically. The hybridization impacts the emitted photon statistics manifesting faster radiative decay rate, photon bunching effect, and modified Auger recombination pathway compared to the monomer artificial atoms. Future perspectives for the nanocrystals chemistry paradigm are also highlighted.

Relativistic Artificial Molecules Realized by Two Coupled Graphene Quantum Dots

Coupled quantum dots (QDs), usually referred to as artificial molecules, are important not only in exploring fundamental physics of coupled quantum objects but also in realizing advanced QD devices. However, previous studies have been limited to artificial molecules with nonrelativistic Fermions. Here, we show that relativistic artificial molecules can be realized when two circular graphene QDs are coupled to each other. Using scanning tunneling microscopy (STM) and spectroscopy (STS), we observe the formation of bonding and antibonding states of the relativistic artificial molecule and directly visualize these states of the two coupled graphene QDs. The formation of the relativistic molecular states strongly alters distributions of massless Dirac Fermions confined in the graphene QDs. Moreover, our experiment demonstrates that the degeneracy of different angular-momentum states in the relativistic artificial molecule can be further lifted by external magnetic fields. Then, both the bonding and antibonding states are split into two peaks.

Photoluminescence characterization of wetting layer and carrier dynamics for coupled InGaAs/GaAs surface quantum dot pair structures

The optical properties are investigated by spectroscopic characterizations for bilayer InGaAs/GaAs quantum dot (QD) structures consisting of a layer of surface quantum dots (SQDs) separated from a layer of buried quantum dots (BQDs) by different GaAs spacers with thicknesses of 7 nm, 10.5 nm and 70 nm. The coupling from the BQDs to SQDs leads to carrier transfer for the two samples with thin spacers, 7 nm and 10.5 nm, in which QD pairs are obtained while not for the 70 nm spacer sample. The carrier tunneling time is measured to be 0.145 ns and 0.275 ns from BQDs to SQD through the 7 nm and 10.5 nm spacers, respectively. A weak emission band can be observed at the wavelength of ∼ 960 nm, while the excitation intensity dependent PL and PLE spectra show that this is from the wetting layer (WL) of the SQDs. This WL is very important for carrier dynamics in bilayer structures of BQDs and SQDs, including for carrier generation, capture, relaxation, tunneling, and recombination. These results provide useful information for understanding the optical properties of InGaAs SQDs and for using such hybrid structures as building blocks for surface sensing devices.

Optical shaping of the polarization anisotropy in a laterally coupled quantum dot dimer

We find that the emission from laterally coupled quantum dots is strongly polarized along the coupled direction [11 ¯ 0], and its polarization anisotropy can be shaped by changing the orientation of the polarized excitation. When the nonresonant excitation is linearly polarized perpendicular to the coupled direction [110], excitons (X1 and X2) and local biexcitons (X1X1 and X2X2) from the two separate quantum dots (QD1 and QD2) show emission anisotropy with a small degree of polarization (10%). On the other hand, when the excitation polarization is parallel to the coupled direction [11 ¯ 0], the polarization anisotropy of excitons, local biexcitons, and coupled biexcitons (X1X2) is enhanced with a degree of polarization of 74%. We also observed a consistent anisotropy in the time-resolved photoluminescence. The decay rate of the polarized photoluminescence intensity along the coupled direction is relatively high, but the anisotropic decay rate can be modified by changing the orientation of the polarized excitation. An energy difference is also observed between the polarized emission spectra parallel and perpendicular to the coupled direction, and it increases by up to three times by changing the excitation polarization orientation from [110] to [11 ¯ 0]. These results suggest that the dipole-dipole interaction across the two separate quantum dots is mediated and that the anisotropic wavefunctions of the excitons and biexcitons are shaped by the excitation polarization.

Precise Arrays of Epitaxial Quantum Dots Nucleated by In Situ Laser Interference for Quantum Information Technology Applications

Precisely ordered arrays of InAs quantum dots are formed on a nanoisland-structured GaAs (100) surface using in situ laser interference during self-assembled molecular beam epitaxial growth. Nanoislands induced by single-pulse four-beam laser interference act as preferential nucleation sites for InAs quantum dots and result in site occupation dependent on the size of nanoislands, the InAs coverage, and the laser parameters. By optimizing the growth and interference conditions, regular dense ordering of single dots was obtained for the first time using this in situ noninvasive approach. The photoluminescence spectra of the resulting quantum dot arrays with a period of 300 nm show good optical quality and uniformity. This technique paves the way for the rapid large-scale fabrication of arrays of single dots to enable quantum information technology device platforms.

Colloidal quantum dot molecules manifesting quantum coupling at room temperature

Coupling of atoms is the basis of chemistry, yielding the beauty and richness of molecules. We utilize semiconductor nanocrystals as artificial atoms to form nanocrystal molecules that are structurally and electronically coupled. CdSe/CdS core/shell nanocrystals are linked to form dimers which are then fused via constrained oriented attachment. The possible nanocrystal facets in which such fusion takes place are analyzed with atomic resolution revealing the distribution of possible crystal fusion scenarios. Coherent coupling and wave-function hybridization are manifested by a redshift of the band gap, in agreement with quantum mechanical simulations. Single nanoparticle spectroscopy unravels the attributes of coupled nanocrystal dimers related to the unique combination of quantum mechanical tunneling and energy transfer mechanisms. This sets the stage for nanocrystal chemistry to yield a diverse selection of coupled nanocrystal molecules constructed from controlled core/shell nanocrystal building blocks. These are of direct relevance for numerous applications in displays, sensing, biological tagging and emerging quantum technologies.

In analogy to the coupling of atoms into molecules, the authors fuse colloidal semiconductor nanocrystals into quantum dot dimers. These nanocrystal ‘molecules’ exhibit significant quantum coupling effects, making them promising for applications in devices and potential quantum technologies.

Tunable Coupling of a Double Quantum Dot Spin System to a Mechanical Resonator

The interaction of quantum systems with mechanical resonators is of practical interest for applications in quantum information and sensing and also of fundamental interest as hybrid quantum systems. Achieving a large and tunable interaction strength is of great importance in this field as it enables controlled access to the quantum limit of motion and coherent interactions between different quantum systems. This has been challenging with solid state spins, where typically the coupling is weak and cannot be tuned. Here we use pairs of coupled quantum dots embedded within cantilevers to achieve a high coupling strength of the singlet-triplet spin system to mechanical motion through strain. Two methods of achieving strong, tunable coupling are demonstrated. The first is through different strain-induced energy shifts for the two QDs when the cantilever vibrates, resulting in changes to the exchange interaction. The second is through a laser-driven AC Stark shift that is sensitive to strain-induced shifts of the optical transitions. Both of these mechanisms can be tuned to zero with electrical bias or laser power, respectively, and give large spin-mechanical coupling strengths.

Spin-orbit-induced hole spin relaxation in a quantum dot molecule: the effect of s-p coupling

We study the effect of the coupling between the hole s shell of one quantum dot and the p  shell in the other dot forming a vertically stacked self-assembled quantum dot molecule on the spin relaxation between the sublevels of the hole s state. Using an effective model that captures the spin-orbit effects in the p  shell irrespective of their origin, we show that the strong spin mixing in the p  shell can be transferred to the s shell of the other dot, leading to enhanced spin relaxation in a certain energy range around the s-p  resonance if the dots are misaligned and the magnetic field is tilted from the sample plane.

Deterministic Generation of Large-Scale Entangled Photonic Cluster State from Interacting Solid State Emitters

The ability to create large highly entangled "cluster" states is crucial for measurement-based quantum computing. We show that deterministic multiphoton entanglement can be created from coupled solid state quantum emitters without the need for any two-qubit gates and regardless of whether the emitters are identical. In particular, we present a general method for controlled entanglement creation by making direct use of the always-on exchange interaction, in combination with single-qubit operations. This is used to provide a recipe for the generation of two-dimensional, cluster-state entangled photons that can be carried out with existing experimental capabilities in quantum dots.

Real Space Observation of Electronic Coupling between Self-Assembled Quantum Dots

The control of quantum coupling between nano-objects is essential to quantum technologies. Confined nanostructures, such as cavities, resonators, or quantum dots, are designed to enhance interactions between electrons, photons, or phonons, giving rise to new properties, on which devices are developed. The nature and strength of these interactions are often measured indirectly on an assembly of dissimilar objects. Here, we adopt an innovative point of view by directly mapping the coupling of single nanostructures using scanning tunneling microscopy and spectroscopy (STM and STS). We take advantage of the unique capabilities of STM/STS to map simultaneously the nano-object's morphology and electronic density in order to observe in real space the electronic coupling of pairs of In(Ga)As/GaAs self-assembled quantum dots (QDs), forming quantum dot molecules (QDMs). Differential conductance maps d I/d V ( E, x, y) demonstrate the presence of an effective electronic coupling, leading to bonding and antibonding states, even for dissymmetric QDMs. The experimental results are supported by numerical simulations. The actual geometry of the QDMs is taken into account to determine the strength of the coupling, showing the crucial role of quantum dot size and pair separation for device growth optimization.

Nanowire-based sources of non-classical light

Sources of quantum light that utilize photonic nanowire designs have emerged as potential candidates for high efficiency non-classical light generation in quantum information processing. In this review we cover the different platforms used to produce nanowire-based sources, highlighting the importance of waveguide design and material properties in achieving optimal performance. The limitations of the sources are identified and routes to optimization are proposed. State-of-the-art nanowire sources are compared to other solid-state quantum emitter platforms with regard to the key metrics of single photon purity, indistinguishability and entangled-pair fidelity to maximally entangled Bell states. We also discuss the unique ability of the nanowire platform to incorporate multiple emitters in the same optical mode and consider potential applications. Finally, routes to on-chip integration are discussed and the challenges facing the development of a nanowire-based scalable architecture are presented.

Enhancing Third- and Fifth-Order Nonlinearity via Tunneling in Multiple Quantum Dots

The nonlinearity of semiconductor quantum dots under the condition of low light levels has many important applications. In this study, linear absorption, self-Kerr nonlinearity, fifth-order nonlinearity and cross-Kerr nonlinearity of multiple quantum dots, which are coupled by multiple tunneling, are investigated by using the probability amplitude method. It is found that the linear and nonlinear properties of multiple quantum dots can be modified by the tunneling intensity and energy splitting of the system. Most importantly, it is possible to realize enhanced self-Kerr nonlinearity, fifth-order nonlinearity and cross-Kerr nonlinearity with low linear absorption by choosing suitable parameters for the multiple quantum dots. These results have many potential applications in nonlinear optics and quantum information devices using semiconductor quantum dots.

Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots

We investigate the optical properties of InGaAs surface quantum dots (SQDs) in a composite nanostructure with a layer of similarly grown buried quantum dots (BQDs) separated by a thick GaAs spacer, but with varied areal densities of SQDs controlled by using different growth temperatures. Such SQDs behave differently from the BQDs, depending on the surface morphology. Dedicated photoluminescence (PL) measurements for the SQDs grown at 505 °C reveal that the SQD emission follows different relaxation channels while exhibiting abnormal thermal quenching. The PL intensity ratio between the SQDs and BQDs demonstrates interplay between excitation intensity and temperature. These observations suggest a strong dependence on the surface for carrier dynamics of the SQDs, depending on the temperature and excitation intensity.

Interlayer Trions in the MoS2/WS2 van der Waals Heterostructure

Electronic excitations in van der Waals heterostructures can have interlayer or intralayer character depending on the spatial localization of the involved charges (electrons and holes). In the case of neutral electron-hole pairs (excitons), both types of excitations have been explored theoretically and experimentally. In contrast, studies of charged trions have so far been limited to the intralayer type. Here we investigate the complete set of interlayer excitations in a MoS₂/WS₂ heterostructure using a novel ab initio method, which allows for a consistent treatment of both excitons and trions at the same theoretical footing. Our calculations predict the existence of bound interlayer trions below the neutral interlayer excitons. We obtain binding energies of 18/28 meV for the positive/negative interlayer trions with both electrons/holes located on the same layer. In contrast, a negligible binding energy is found for trions which have the two equally charged particles on different layers. Our results advance the understanding of electronic excitations in doped van der Waals heterostructures and their effect on the optical properties.

Picosecond pulse shaping of single photons using quantum dots

Quantum dots (QDs) are an excellent single-photon source that can be combined with a spin quantum memory. Many quantum technologies require increased control over the characteristics of emitted photons. A powerful approach is to trigger coherent Raman photons from QDs with a Λ energy-level system, such as the spin singlet–triplet system in two coupled QDs. The temporal and spectral behavior of single Raman photons can be varied simply by modifying the excitation source. Here, we demonstrate control of the single-photon pulse shape in a solid-state system on a timescale much shorter than the radiative lifetime, in addition to control of the frequency and bandwidth. We achieve a photon pulse width of 80 ps—an order of magnitude shorter than the exciton lifetime. Possible applications include time-bin encoding of quantum information, matching photons from different sources, and efficient single-photon transfer in a quantum network.

Tailoring single photons’ pulse shapes could have applications such as time-bin encoding or interfacing different photon emitters. Here, the authors achieve pulse shaping of Raman single photons from InGaAs quantum dots on a picosecond timescale, much shorter than the radiative lifetime.

Bias-Controlled Optical Transitions in GaN/AlN Nanowire Heterostructures

We report on the control and modification of optical transitions in 40× GaN/AlN heterostructure superlattices embedded in GaN nanowires by an externally applied bias. The complex band profile of these multi-nanodisc heterostructures gives rise to a manifold of optical transitions, whose emission characteristic is strongly influenced by polarization-induced internal electric fields. We demonstrate that the superposition of an external axial electric field along a single contacted nanowire leads to specific modifications of each photoluminescence emission, which allows to investigate and identify their origin and to control their characteristic properties in terms of transition energy, intensity and decay time. Using this approach, direct transitions within one nanodisc, indirect transitions between adjacent nanodiscs, transitions at the top/bottom edge of the heterostructure, and the GaN near-band-edge emission can be distinguished. While the transition energy of the direct transition can be shifted by external bias over a range of 450 meV and changed in intensity by a factor of 15, the indirect transition exhibits an inverse bias dependence and is only observable and spectrally separated when external bias is applied. In addition, by tuning the band profile close to flat band conditions, the direction and magnitude of the internal electric field can be estimated, which is of high interest for the polar group III-nitrides. The direct control of emission properties over a wide range bears possible application in tunable optoelectronic devices. For more fundamental studies, single-nanowire heterostructures provide a well-defined and isolated system to investigate and control interaction processes in coupled quantum structures.

A solid state source of photon triplets based on quantum dot molecules

Producing advanced quantum states of light is a priority in quantum information technologies. In this context, experimental realizations of multipartite photon states would enable improved tests of the foundations of quantum mechanics as well as implementations of complex quantum optical networks and protocols. It is favourable to directly generate these states using solid state systems, for simpler handling and the promise of reversible transfer of quantum information between stationary and flying qubits. Here we use the ground states of two optically active coupled quantum dots to directly produce photon triplets. The formation of a triexciton in these ground states leads to a triple cascade recombination and sequential emission of three photons with strong correlations. We record 65.62 photon triplets per minute under continuous-wave pumping, surpassing rates of earlier reported sources. Our structure and data pave the way towards implementing multipartite photon entanglement and multi-qubit readout schemes in solid state devices.

Multipartite photon states are desirable in quantum information technology but their generation in optical systems is less efficient with poor scaling. Here the authors demonstrate time-ordered photon triplets from a quantum dot molecule in a direct generation process with increased efficiency.

Quantum-Confined Stark Effect of Individual Defects in a van der Waals Heterostructure

The optical properties of atomically thin semiconductor materials have been widely studied because of the isolation of monolayer transition metal dichalcogenides (TMDCs). They have rich optoelectronic properties owing to their large direct bandgap, the interplay between the spin and the valley degree of freedom of charge carriers, and the recently discovered localized excitonic states giving rise to single photon emission. In this Letter, we study the quantum-confined Stark effect of these localized emitters present near the edges of monolayer tungsten diselenide (WSe₂). By carefully designing sequences of metallic (graphene), insulating (hexagonal boron nitride), and semiconducting (WSe₂) two-dimensional materials, we fabricate a van der Waals heterostructure field effect device with WSe₂ hosting quantum emitters that is responsive to external static electric field applied to the device. A very efficient spectral tunability up to 21 meV is demonstrated. Further, evaluation of the spectral shift in the photoluminescence signal as a function of the applied voltage enables us to extract the polarizability volume (up to 2000 ų) as well as information on the dipole moment of an individual emitter. The Stark shift can be further modulated on application of an external magnetic field, where we observe a flip in the sign of dipole moment possibly due to rearrangement of the position of electron and hole wave functions within the emitter.

Novel nanoparticulate systems for lung cancer therapy: an updated review

Lung cancer is the leading cause of cancer-related deaths in the world. Conventional therapy for lung cancer is associated with lack of specificity and access to the normal cells resulting in cytotoxicity, reduced cellular uptake, drug resistance and rapid drug clearance from the body. The emergence of nanotechnology has revolutionized the treatment of lung cancer. The focus of nanotechnology is to target tumor cells with improved bioavailability and reduced toxicity. In the recent years, nanoparticulate systems have extensively been exploited in order to overcome the obstacles in treatment of lung cancer. Nanoparticulate systems have shown much potential for lung cancer therapy by gaining selective access to the tumor cells due to surface modifiability and smaller size. In this review, various novel nanoparticles (NPs) based formulations have been discussed in the treatment of lung cancer. Nanotechnology is expected to grow fast in future, and it will provide new avenues for the improved treatment of lung cancer. This review article also highlights the characteristics, recent advances in the designing of NPs and therapeutic outcomes.

Exciton Dipole-Dipole Interaction in a Single Coupled-Quantum-Dot Structure via Polarized Excitation

We find that the exciton dipole-dipole interaction in a single laterally coupled GaAs/AlGaAs quantum dot structure can be controlled by the linear polarization of a nonresonant optical excitation. When the excitation intensity is increased with the linearly polarized light parallel to the lateral coupling direction [11̅0], excitons (X₁ and X₂) and local biexcitons (X₁X₁ and X₂X₂) of the two separate quantum dots (QD₁ and QD₂) show a redshift along with coupled biexcitons (X₁X₂), while neither coupled biexcitons nor a redshift are observed when the polarization of the exciting beam is perpendicular to the coupling direction. The polarization dependence and the redshift are attributed to an optical nonlinearity in the exciton Förster resonant energy transfer interaction, whereby exciton population transfer between the two quantum dots also becomes significant with increasing excitation intensity. We have further distinguished coupled biexcitons from local biexcitons by their large diamagnetic coefficient.

Tunneling induced absorption with competing Nonlinearities

We investigate tunneling induced nonlinear absorption phenomena in a coupled quantum-dot system. Resonant tunneling causes constructive interference in the nonlinear absorption that leads to an increase of more than an order of magnitude over the maximum absorption in a coupled quantum dot system without tunneling. Resonant tunneling also leads to a narrowing of the linewidth of the absorption peak to a sublinewidth level. Analytical expressions show that the enhanced nonlinear absorption is largely due to the fifth-order nonlinear term. Competition between third- and fifth-order nonlinearities leads to an anomalous dispersion of the total susceptibility.

Creation and Transfer of Coherence via Technique of Stimulated Raman Adiabatic Passage in Triple Quantum Dots

We propose a scheme for creation and transfer of coherence among ground state and indirect exciton states of triple quantum dots via the technique of stimulated Raman adiabatic passage. Compared with the traditional stimulated Raman adiabatic passage, the Stokes laser pulse is replaced by the tunneling pulse, which can be controlled by the externally applied voltages. By varying the amplitudes and sequences of the pump and tunneling pulses, a complete coherence transfer or an equal coherence distribution among multiple states can be obtained. The investigations can provide further insight for the experimental development of controllable coherence transfer in semiconductor structure and may have potential applications in quantum information processing.

Droplet etching of deep nanoholes for filling with self-aligned complex quantum structures

Strain-free epitaxial quantum dots (QDs) are fabricated by a combination of Al local droplet etching (LDE) of nanoholes in AlGaAs surfaces and subsequent hole filling with GaAs. The whole process is performed in a conventional molecular beam epitaxy (MBE) chamber. Autocorrelation measurements establish single-photon emission from LDE QDs with a very small correlation function g ((2))(0)≃ 0.01 of the exciton emission. Here, we focus on the influence of the initial hole depth on the QD optical properties with the goal to create deep holes suited for filling with more complex nanostructures like quantum dot molecules (QDM). The depth of droplet etched nanoholes is controlled by the droplet material coverage and the process temperature, where a higher coverage or temperature yields deeper holes. The requirements of high quantum dot uniformity and narrow luminescence linewidth, which are often found in applications, set limits to the process temperature. At high temperatures, the hole depths become inhomogeneous and the linewidth rapidly increases beyond 640 °C. With the present process technique, we identify an upper limit of 40-nm hole depth if the linewidth has to remain below 100 μeV. Furthermore, we study the exciton fine-structure splitting which is increased from 4.6 μeV in 15-nm-deep to 7.9 μeV in 35-nm-deep holes. As an example for the functionalization of deep nanoholes, self-aligned vertically stacked GaAs QD pairs are fabricated by filling of holes with 35 nm depth. Exciton peaks from stacked dots show linewidths below 100 μeV which is close to that from single QDs.

Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots

The optical properties of In_0.3Ga_0.7As/GaAs surface quantum dots (SQDs) and buried QDs (BQDs) are investigated by photoluminescence (PL) measurements. The integrated PL intensity, linewidth, and lifetime of SQDs are significantly different from the BQDs both at room temperature and at low temperature. The differences in PL response, measured at both steady state and in transient, are attributed to carrier transfer between the surface states and the SQDs.

Nonlocal Nuclear Spin Quieting in Quantum Dot Molecules: Optically Induced Extended Two-Electron Spin Coherence Time

We demonstrate the extension of coherence between all four two-electron spin ground states of an InAs quantum dot molecule (QDM) via nonlocal suppression of nuclear spin fluctuations in two vertically stacked quantum dots (QDs), while optically addressing only the top QD transitions. Long coherence times are revealed through dark-state spectroscopy as resulting from nuclear spin locking mediated by the exchange interaction between the QDs. Line shape analysis provides the first measurement of the quieting of the Overhauser field distribution correlating with reduced nuclear spin fluctuations.

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy

High resolution optical spectroscopy methods are demanding in terms of either technology, equipment, complexity, time or a combination of these. Here we demonstrate an optical spectroscopy method that is capable of resolving spectral features beyond that of the spin fine structure and homogeneous linewidth of single quantum dots (QDs) using a standard, easy-to-use spectrometer setup. This method incorporates both laser and photoluminescence spectroscopy, combining the advantage of laser line-width limited resolution with multi-channel photoluminescence detection. Such a scheme allows for considerable improvement of resolution over that of a common single-stage spectrometer. The method uses phonons to assist in the measurement of the photoluminescence of a single quantum dot after resonant excitation of its ground state transition. The phonon's energy difference allows one to separate and filter out the laser light exciting the quantum dot. An advantageous feature of this method is its straight forward integration into standard spectroscopy setups, which are accessible to most researchers.

Coulomb Mediated Hybridization of Excitons in Coupled Quantum Dots

We report Coulomb mediated hybridization of excitonic states in optically active InGaAs quantum dot molecules. By probing the optical response of an individual quantum dot molecule as a function of the static electric field applied along the molecular axis, we observe unexpected avoided level crossings that do not arise from the dominant single-particle tunnel coupling. We identify a new few-particle coupling mechanism stemming from Coulomb interactions between different neutral exciton states. Such Coulomb resonances hybridize the exciton wave function over four different electron and hole single-particle orbitals. Comparisons of experimental observations with microscopic eight-band k·p calculations taking into account a realistic quantum dot geometry show good agreement and reveal that the Coulomb resonances arise from broken symmetry in the artificial semiconductor molecule.

Hole spins in an InAs/GaAs quantum dot molecule subject to lateral electric fields

There has been tremendous progress in manipulating electron and hole-spin states in quantum dots or quantum dot molecules (QDMs) with growth-direction (vertical) electric fields and optical excitations. However, the response of carriers in QDMs to an in-plane (lateral) electric field remains largely unexplored. We computationally explore spin-mixing interactions in the molecular states of single holes confined in vertically stacked InAs/GaAs QDMs using atomistic tight-binding simulations. We systematically investigate QDMs with different geometric structure parameters and local piezoelectric fields. We observe both a relatively large Stark shift and a change in the Zeeman splitting as the magnitude of the lateral electric field increases. Most importantly, we observe that lateral electric fields induce hole-spin mixing with a magnitude that increases with increasing lateral electric field over a moderate range. These results suggest that applied lateral electric fields could be used to fine tune and manipulate, in situ, the energy levels and spin properties of single holes confined in QDMs.

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer

The electronic coupling in vertically aligned InAs/GaAs quantum dot (QD) pairs is investigated by photoluminescence (PL) measurements. A thin Al0.5Ga0.5As barrier greatly changes the energy transfer process and the optical performance of the QD pairs. As a result, the QD PL intensity ratio shows different dependence on the intensity and wavelength of the excitation laser. Time-resolved PL measurements give a carrier tunneling time of 380 ps from the seed layer QDs to the top layer QDs while it elongates to 780 ps after inserting the thin Al0.5Ga0.5As barrier. These results provide useful information for fabrication and investigation of artificial QD molecules for implementing quantum computation applications.

Hole spin relaxation in InAs/GaAs quantum dot molecules

We calculate the spin-orbit induced hole spin relaxation between Zeeman sublevels of vertically stacked InAs quantum dots. The widely used Luttinger-Kohn Hamiltonian, which considers coupling of heavy- and light-holes, reveals that hole spin lifetimes (T1) of molecular states significantly exceed those of single quantum dot states. However, this effect can be overcome when cubic Dresselhaus spin-orbit interaction is strong. Misalignment of the dots along the stacking direction is also found to be an important source of spin relaxation.

Quantum Optical Signature of Plasmonically Coupled Nanocrystal Quantum Dots

Small clusters of two to three silica-coated nanocrystals coupled to plasmonic gap-bar antennas can exhibit photon antibunching, a characteristic of single quantum emitters. Through a detailed analysis of their photoluminescence emissions characteristics, it is shown that the observed photon antibunching is the evidence of coupled quantum dot formation resulting from the plasmonic enhancement of dipole-dipole interaction.

Opto-nanomechanical spectroscopic material characterization

The non-destructive, simultaneous chemical and physical characterization of materials at the nanoscale is an essential and highly sought-after capability. However, a combination of limitations imposed by Abbe diffraction, diffuse scattering, unknown subsurface, electromagnetic fluctuations and Brownian noise, for example, have made achieving this goal challenging. Here, we report a hybrid approach for nanoscale material characterization based on generalized nanomechanical force microscopy in conjunction with infrared photoacoustic spectroscopy. As an application, we tackle the outstanding problem of spatially and spectrally resolving plant cell walls. Nanoscale characterization of plant cell walls and the effect of complex phenotype treatments on biomass are challenging but necessary in the search for sustainable and renewable bioenergy. We present results that reveal both the morphological and compositional substructures of the cell walls. The measured biomolecular traits are in agreement with the lower-resolution chemical maps obtained with infrared and confocal Raman micro-spectroscopies of the same samples. These results should prove relevant in other fields such as cancer research, nanotoxicity, and energy storage and production, where morphological, chemical and subsurface studies of nanocomposites, nanoparticle uptake by cells and nanoscale quality control are in demand.

Spin-cavity interactions between a quantum dot molecule and a photonic crystal cavity

The integration of InAs/GaAs quantum dots into nanophotonic cavities has led to impressive demonstrations of cavity quantum electrodynamics. However, these demonstrations are primarily based on two-level excitonic systems. Efforts to couple long-lived quantum dot electron spin states with a cavity are only now succeeding. Here we report a two-spin–cavity system, achieved by embedding an InAs quantum dot molecule within a photonic crystal cavity. With this system we obtain a spin singlet–triplet Λ-system where the ground-state spin splitting exceeds the cavity linewidth by an order of magnitude. This allows us to observe cavity-stimulated Raman emission that is highly spin-selective. Moreover, we demonstrate the first cases of cavity-enhanced optical nonlinearities in a solid-state Λ-system. This provides an all-optical, local method to control the spin exchange splitting. Incorporation of a highly engineerable quantum dot molecule into the photonic crystal architecture advances prospects for a quantum network.

Optical cavities enhance light–matter interactions, and have been used to strongly couple a photon to a single spin. Here, the authors take this a step further by coupling a photon to a two-spin system by embedding an indium arsenide quantum-dot molecule in a photonic crystal cavity.

Negative Differential Resistance Probe for Interdot Interactions in a Double Quantum Dot Array

Colloidal quantum dots are free-standing nanostructures with chemically tunable electronic properties. In this work, we consider a new STM tip-double quantum dot (DQD)-surface setup with a unique connectivity, in which the tip is coupled to a single dot and the coupling to the surface is shared by both dots. Our theoretical analysis reveals a unique negative differential resistance (NDR) effect attributed to destructive interference during charge transfer from the DQD to the surface. This NDR can be used as a sensitive probe for interdot interactions in DQD arrays.

Hollow spheres consisting of Ti0.91O2/CdS nanohybrids for CO2 photofixation

Multilayer hollow spheres consisting of alternating ultrathin Ti_0.91O₂ nanosheets and CdS nanoparticles have achieved a redox mediator-free artificial Z-scheme for photocatalytic reduction of CO₂ into CH₄, which was proved by indirect optical transition effect.

The role of phonons for exciton and biexciton generation in an optically driven quantum dot

For many applications of semiconductor quantum dots in quantum technology, well-controlled state preparation of the quantum dot states is mandatory. Since quantum dots are embedded in the semiconductor matrix, their interaction with phonons often plays a major role in the preparation process. In this review, we discuss the influence of phonons on three basically different optical excitation schemes that can be used for the preparation of exciton, biexciton and superposition states: a resonant excitation leading to Rabi rotations in the excitonic system, an excitation with chirped pulses exploiting the effect of adiabatic rapid passage and an off-resonant excitation giving rise to a phonon-assisted state preparation. We give an overview of experimental and theoretical results, showing the role of phonons and compare the performance of the schemes for state preparation.

Probing the internal electric field in GaN/AlGaN nanowire heterostructures

We demonstrate the direct analysis of polarization-induced internal electric fields in single GaN/Al0.3Ga0.7N nanodiscs embedded in GaN/AlN nanowire heterostructures. Superposition of an external electric field with different polarity results in compensation or enhancement of the quantum-confined Stark effect in the nanodiscs. By field-dependent analysis of the low temperature photoluminescence energy and intensity, we prove the [0001̅]-polarity of the nanowires and determine the internal electric field strength to 1.5 MV/cm.

Coupling effects on photoluminescence of exciton states in asymmetric quantum dot molecules

We present a theoretical study of photoluminescence from exciton states in InAs/GaAs asymmetric dot pairs, where interdot coupling is reached via magnetic field in the Faraday configuration. Electronic structure is obtained by finite element calculations, and Coulomb effects are included using a perturbative approach. According to our simulated spectra, bright excited states may become optically accessible at low temperatures in hybridization regimes where intermixing with the ground state is achieved. Our results show effective magnetic control on the energy, polarization and intensity of emitted light, and suggest these coupled nanostructures as relevant candidates for implementation of quantum optoelectronic devices.

Vertically stacked quantum dot pairs fabricated by nanohole filling

Strain-free, vertically coupled GaAs quantum dots (QDs) with an ultra-low density below 1 × 10(7) cm(-2) are fabricated by filling of self-assembled nanoholes with a GaAs/AlGaAs/GaAs layer sequence. The sizes of the two QDs, forming a QD pair (QDP), as well as the AlGaAs tunnel-barrier between the dots are tuned independently. We present atomic force microscopy studies of the QDP formation steps. We have performed photoluminescence studies of single QDPs with varied dot size and tunnel-barrier thickness. The data indicate non-resonant tunnelling between the dots. Furthermore, we apply the quantum confined Stark effect to tune the photoluminescence energy by up to 25 meV.

Dynamic acoustic control of individual optically active quantum dot-like emission centers in heterostructure nanowires

We probe and control the optical properties of emission centers forming in radial heterostructure GaAs-Al0.3Ga0.7As nanowires and show that these emitters, located in Al0.3Ga0.7As layers, can exhibit quantum-dot like characteristics. We employ a radio frequency surface acoustic wave to dynamically control their emission energy, and occupancy state on a nanosecond time scale. In the spectral oscillations, we identify unambiguous signatures arising from both the mechanical and electrical component of the surface acoustic wave. In addition, different emission lines of a single emission center exhibit pronounced anticorrelated intensity oscillations during the acoustic cycle. These arise from a dynamically triggered carrier extraction out of the emission center to a continuum in the radial heterostructure. Using finite element modeling and Wentzel-Kramers-Brillouin theory we identify quantum tunneling as the underlying mechanism. These simulation results quantitatively reproduce the observed switching and show that in our systems these emission centers are spatially separated from the continuum by >10.5 nm.