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Li J, Yang X, Zhang Z, Yang W, Duan X, Duan X. Towards the scalable synthesis of two-dimensional heterostructures and superlattices beyond exfoliation and restacking. NATURE MATERIALS 2024:10.1038/s41563-024-01989-8. [PMID: 39227467 DOI: 10.1038/s41563-024-01989-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Accepted: 08/02/2024] [Indexed: 09/05/2024]
Abstract
Two-dimensional transition metal dichalcogenides, which feature atomically thin geometry and dangling-bond-free surfaces, have attracted intense interest for diverse technology applications, including ultra-miniaturized transistors towards the subnanometre scale. A straightforward exfoliation-and-restacking approach has been widely used for nearly arbitrary assembly of diverse two-dimensional (2D) heterostructures, superlattices and moiré superlattices, providing a versatile materials platform for fundamental investigations of exotic physical phenomena and proof-of-concept device demonstrations. While this approach has contributed importantly to the recent flourishing of 2D materials research, it is clearly unsuitable for practical technologies. Capturing the full potential of 2D transition metal dichalcogenides requires robust and scalable synthesis of these atomically thin materials and their heterostructures with designable spatial modulation of chemical compositions and electronic structures. The extreme aspect ratio, lack of intrinsic substrate and highly delicate nature of the atomically thin crystals present fundamental difficulties in material synthesis. Here we summarize the key challenges, highlight current advances and outline opportunities in the scalable synthesis of transition metal dichalcogenide-based heterostructures, superlattices and moiré superlattices.
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Affiliation(s)
- Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Xiangdong Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, China
| | - Zhengwei Zhang
- School of Physics and Electronics, Central South University, Changsha, China
| | - Weiyou Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China.
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, USA.
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2
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Wu R, Zhang H, Ma H, Zhao B, Li W, Chen Y, Liu J, Liang J, Qin Q, Qi W, Chen L, Li J, Li B, Duan X. Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures. Chem Rev 2024. [PMID: 39189449 DOI: 10.1021/acs.chemrev.4c00174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have attracted a lot of attention due to their rich material diversity and stack geometry, precise controllability of structure and properties, and potential practical applications. These heterostructures not only overcome the inherent limitations of individual materials but also enable the realization of new properties through appropriate combinations, establishing a platform to explore new physical and chemical properties at micro-nano-pico scales. In this review, we systematically summarize the latest research progress in the synthesis, modulation, and application of 2D TMD heterostructures. We first introduce the latest techniques for fabricating 2D TMD heterostructures, examining the rationale, mechanisms, advantages, and disadvantages of each strategy. Furthermore, we emphasize the importance of characteristic modulation in 2D TMD heterostructures and discuss some approaches to achieve novel functionalities. Then, we summarize the representative applications of 2D TMD heterostructures. Finally, we highlight the challenges and future perspectives in the synthesis and device fabrication of 2D TMD heterostructures and provide some feasible solutions.
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Affiliation(s)
- Ruixia Wu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Hongmei Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Huifang Ma
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- School of Flexible Electronics (Future Technologies) Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Bei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Wei Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Yang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jianteng Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jingyi Liang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Qiuyin Qin
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Weixu Qi
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Liang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Bo Li
- Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
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3
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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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4
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Devarakonda A, Chen A, Fang S, Graf D, Kriener M, Akey AJ, Bell DC, Suzuki T, Checkelsky JG. Evidence of striped electronic phases in a structurally modulated superlattice. Nature 2024; 631:526-530. [PMID: 38961299 DOI: 10.1038/s41586-024-07589-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Accepted: 05/21/2024] [Indexed: 07/05/2024]
Abstract
The electronic properties of crystals can be manipulated by superimposing spatially periodic electric, magnetic or structural modulations. Long-wavelength modulations incommensurate with the atomic lattice are particularly interesting1, exemplified by recent advances in two-dimensional (2D) moiré materials2,3. Bulk van der Waals (vdW) superlattices4-8 hosting 2D interfaces between minimally disordered layers represent scalable bulk analogues of artificial vdW heterostructures and present a complementary venue to explore incommensurately modulated 2D states. Here we report the bulk vdW superlattice SrTa2S5 realizing an incommensurate one-dimensional (1D) structural modulation of 2D transition metal dichalcogenide (TMD) H-TaS2 layers. High-quality electronic transport in the H-TaS2 layers, evidenced by quantum oscillations, is made anisotropic by the modulation and exhibits commensurability oscillations paralleling lithographically modulated 2D systems9-11. We also find unconventional, clean-limit superconductivity in SrTa2S5 with a pronounced suppression of interlayer relative to intralayer coherence. The in-plane magnetic field dependence of interlayer critical current, together with electron diffraction from the structural modulation, suggests superconductivity12-14 in SrTa2S5 is spatially modulated and mismatched between adjacent TMD layers. With phenomenology suggestive of pair-density wave superconductivity15-17, SrTa2S5 may present a pathway for microscopic evaluation of this unconventional order18-21. More broadly, SrTa2S5 establishes bulk vdW superlattices as versatile platforms to address long-standing predictions surrounding modulated electronic phases in the form of nanoscale vdW devices12,13 to macroscopic crystals22,23.
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Affiliation(s)
- A Devarakonda
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
| | - A Chen
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - S Fang
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - D Graf
- National High Magnetic Field Laboratory, Tallahassee, FL, USA
| | - M Kriener
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
| | - A J Akey
- Center for Nanoscale Systems, Harvard University, Cambridge, MA, USA
| | - D C Bell
- Center for Nanoscale Systems, Harvard University, Cambridge, MA, USA
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA
| | - T Suzuki
- Department of Physics, Toho University, Funabashi, Japan
| | - J G Checkelsky
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA.
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5
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Huangfu Y, Qin B, Lu P, Zhang Q, Li W, Liang J, Liang Z, Liu J, Liu M, Lin X, Li X, Saeed MZ, Zhang Z, Li J, Li B, Duan X. Low Temperature Synthesis of 2D p-Type α-In 2Te 3 with Fast and Broadband Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309620. [PMID: 38294996 DOI: 10.1002/smll.202309620] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2023] [Revised: 01/10/2024] [Indexed: 02/02/2024]
Abstract
2DA 2 III B 3 VI ${\mathrm{A}}_2^{{\mathrm{III}}}{\mathrm{B}}_3^{{\mathrm{VI}}}$ compounds (A = Al, Ga, In, and B = S, Se, and Te) with intrinsic structural defects offer significant opportunities for high-performance and functional devices. However, obtaining 2D atomic-thin nanoplates with non-layered structure on SiO2/Si substrate at low temperatures is rare, which hinders the study of their properties and applications at atomic-thin thickness limits. In this study, the synthesis of ultrathin, non-layered α-In2Te3 nanoplates is demonstrated using a BiOCl-assisted chemical vapor deposition method at a temperature below 350 °C on SiO2/Si substrate. Comprehensive characterization results confirm the high-quality single crystal is the low-temperature cubic phase α-In2Te3 , possessing a noncentrosymmetric defected ZnS structure with good second harmonic generation. Moreover, α-In2Te3 is revealed to be a p-type semiconductor with a direct and narrow bandgap value of 0.76 eV. The field effect transistor exhibits a high mobility of 18 cm2 V-1 s-1, and the photodetector demonstrates stable photoswitching behavior within a broadband photoresponse from 405 to 1064 nm, with a satisfactory response time of τrise = 1 ms. Notably, the α-In2Te3 nanoplates exhibit good stability against ambient environments. Together, these findings establish α-In2Te3 nanoplates as promising candidates for next-generation high-performance photonics and electronics.
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Affiliation(s)
- Ying Huangfu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Ping Lu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Qiankun Zhang
- School of Mechanical Engineering and Mechanics, Xiangtan University, Xiangtan, 411105, China
| | - Wei Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Jingyi Liang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Zhaoming Liang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Jialing Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Miaomiao Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Xiaohui Lin
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Xu Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Muhammad Zeeshan Saeed
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Zhengwei Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Bo Li
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
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6
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Kim S, Lee W, Ko K, Cho H, Cho H, Jeon S, Jeong C, Kim S, Ding F, Suh J. Phase-Centric MOCVD Enabled Synthetic Approaches for Wafer-Scale 2D Tin Selenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400800. [PMID: 38593471 DOI: 10.1002/adma.202400800] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/16/2024] [Revised: 04/01/2024] [Indexed: 04/11/2024]
Abstract
Following an initial nucleation stage at the flake level, atomically thin film growth of a van der Waals material is promoted by ultrafast lateral growth and prohibited vertical growth. To produce these highly anisotropic films, synthetic or post-synthetic modifications are required, or even a combination of both, to ensure large-area, pure-phase, and low-temperature deposition. A set of synthetic strategies is hereby presented to selectively produce wafer-scale tin selenides, SnSex (both x = 1 and 2), in the 2D forms. The 2D-SnSe2 films with tuneable thicknesses are directly grown via metal-organic chemical vapor deposition (MOCVD) at 200 °C, and they exhibit outstanding crystallinities and phase homogeneities and consistent film thickness across the entire wafer. This is enabled by excellent control of the volatile metal-organic precursors and decoupled dual-temperature regimes for high-temperature ligand cracking and low-temperature growth. In contrast, SnSe, which intrinsically inhibited from 2D growth, is indirectly prepared by a thermally driven phase transition of an as-grown 2D-SnSe2 film with all the benefits of the MOCVD technique. It is accompanied by the electronic n-type to p-type crossover at the wafer scale. These tailor-made synthetic routes will accelerate the low-thermal-budget production of multiphase 2D materials in a reliable and scalable fashion.
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Affiliation(s)
- Sungyeon Kim
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Wookhee Lee
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Kyungmin Ko
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Hanbin Cho
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Hoyeon Cho
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Seonhwa Jeon
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Changwook Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Sungkyu Kim
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, South Korea
| | - Feng Ding
- Shenzhen Institute of Advanced Technology, Chinese Academy of Science, Shenzhen, 518055, China
| | - Joonki Suh
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
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7
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Guo S, Ma M, Wang Y, Wang J, Jiang Y, Duan R, Lei Z, Wang S, He Y, Liu Z. Spatially Confined Microcells: A Path toward TMD Catalyst Design. Chem Rev 2024; 124:6952-7006. [PMID: 38748433 DOI: 10.1021/acs.chemrev.3c00711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2024]
Abstract
With the ability to maximize the exposure of nearly all active sites to reactions, two-dimensional transition metal dichalcogenide (TMD) has become a fascinating new class of materials for electrocatalysis. Recently, electrochemical microcells have been developed, and their unique spatial-confined capability enables understanding of catalytic behaviors at a single material level, significantly promoting this field. This Review provides an overview of the recent progress in microcell-based TMD electrocatalyst studies. We first introduced the structural characteristics of TMD materials and discussed their site engineering strategies for electrocatalysis. Later, we comprehensively described two distinct types of microcells: the window-confined on-chip electrochemical microcell (OCEM) and the droplet-confined scanning electrochemical cell microscopy (SECCM). Their setups, working principles, and instrumentation were elucidated in detail, respectively. Furthermore, we summarized recent advances of OCEM and SECCM obtained in TMD catalysts, such as active site identification and imaging, site monitoring, modulation of charge injection and transport, and electrostatic field gating. Finally, we discussed the current challenges and provided personal perspectives on electrochemical microcell research.
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Affiliation(s)
- Shasha Guo
- School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore
| | - Mingyu Ma
- School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore
- School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, 637616, Singapore
| | - Yuqing Wang
- School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore
| | - Jinbo Wang
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Yubin Jiang
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Ruihuan Duan
- School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 639798, Singapore
| | - Zhendong Lei
- School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore
| | - Shuangyin Wang
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Yongmin He
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 639798, Singapore
- Institute for Functional Intelligent Materials, National University of Singapore, 117544, Singapore
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Yu X, Peng Z, Xu L, Shi W, Li Z, Meng X, He X, Wang Z, Duan S, Tong L, Huang X, Miao X, Hu W, Ye L. Manipulating 2D Materials through Strain Engineering. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402561. [PMID: 38818684 DOI: 10.1002/smll.202402561] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2024] [Revised: 05/15/2024] [Indexed: 06/01/2024]
Abstract
This review explores the growing interest in 2D layered materials, such as graphene, h-BN, transition metal dichalcogenides (TMDs), and black phosphorus (BP), with a specific focus on recent advances in strain engineering. Both experimental and theoretical results are delved into, highlighting the potential of strain to modulate physical properties, thereby enhancing device performance. Various strain engineering methods are summarized, and the impact of strain on the electrical, optical, magnetic, thermal, and valleytronic properties of 2D materials is thoroughly examined. Finally, the review concludes by addressing potential applications and challenges in utilizing strain engineering for functional devices, offering valuable insights for further research and applications in optoelectronics, thermionics, and spintronics.
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Affiliation(s)
- Xiangxiang Yu
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
- School of Physic and Optoelectronic Engineering, Yangtze University, Jingzhou, Hubei, 434023, China
| | - Zhuiri Peng
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Langlang Xu
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Wenhao Shi
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Zheng Li
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Xiaohan Meng
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Xiao He
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Shikun Duan
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Tong
- Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, 999077, China
| | - Xinyu Huang
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Xiangshui Miao
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Ye
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
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9
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Sutter E, Kisslinger K, Unocic RR, Burns K, Hachtel J, Sutter P. Photonics in Multimaterial Lateral Heterostructures Combining Group IV Chalcogenide van der Waals Semiconductors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307372. [PMID: 38054819 DOI: 10.1002/smll.202307372] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2023] [Revised: 11/25/2023] [Indexed: 12/07/2023]
Abstract
Lateral heterostructures combining two multilayer group IV chalcogenide van der Waals semiconductors have attracted interest for optoelectronics, twistronics, and valleytronics, owing to their structural anisotropy, bulk-like electronic properties, enhanced optical thickness, and vertical interfaces enabling in-plane charge manipulation/separation, perpendicular to the trajectory of incident light. Group IV monochalcogenides support propagating photonic waveguide modes, but their interference gives rise to complex light emission patterns throughout the visible/near-infrared range both in uniform flakes and single-interface lateral heterostructures. Here, this work demonstrates the judicious integration of pure and alloyed monochalcogenide crystals into multimaterial heterostructures with unique photonic properties, notably the ability to select photonic modes with targeted discrete energies through geometric factors rather than band engineering. SnS-GeS1-xSex-GeSe-GeS1-xSex heterostructures with a GeS1-xSex active layer sandwiched laterally between GeSe and SnS, semiconductors with similar optical constants but smaller bandgaps, were designed and realized via sequential vapor transport synthesis. Raman spectroscopy, electron microscopy/diffraction, and energy-dispersive X-ray spectroscopy confirm a high crystal quality of the laterally stitched components with sharp interfaces. Nanometer-scale cathodoluminescence spectroscopy provides evidence for a facile transfer of electron-hole pairs across the lateral interfaces and demonstrates the selection of photon emission at discrete energies in the laterally embedded active (GeS1- xSex) part of the heterostructure.
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Affiliation(s)
- Eli Sutter
- Department of Mechanical & Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
| | - Kim Kisslinger
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Raymond R Unocic
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA
| | - Kory Burns
- Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Jordan Hachtel
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA
| | - Peter Sutter
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
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10
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Zhang K, Zhang T, You J, Zheng X, Zhao M, Zhang L, Kong J, Luo Z, Huang S. Low-Temperature Vapor-Phase Growth of 2D Metal Chalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307587. [PMID: 38084456 DOI: 10.1002/smll.202307587] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Revised: 11/07/2023] [Indexed: 05/12/2024]
Abstract
2D metal chalcogenides (MCs) have garnered significant attention from both scientific and industrial communities due to their potential in developing next-generation functional devices. Vapor-phase deposition methods have proven highly effective in fabricating high-quality 2D MCs. Nevertheless, the conventionally high thermal budgets required for synthesizing 2D MCs pose limitations, particularly in the integration of multiple components and in specialized applications (such as flexible electronics). To overcome these challenges, it is desirable to reduce the thermal energy requirements, thus facilitating the growth of various 2D MCs at lower temperatures. Numerous endeavors have been undertaken to develop low-temperature vapor-phase growth techniques for 2D MCs, and this review aims to provide an overview of the latest advances in low-temperature vapor-phase growth of 2D MCs. Initially, the review highlights the latest progress in achieving high-quality 2D MCs through various low-temperature vapor-phase techniques, including chemical vapor deposition (CVD), metal-organic CVD, plasma-enhanced CVD, atomic layer deposition (ALD), etc. The strengths and current limitations of these methods are also evaluated. Subsequently, the review consolidates the diverse applications of 2D MCs grown at low temperatures, covering fields such as electronics, optoelectronics, flexible devices, and catalysis. Finally, current challenges and future research directions are briefly discussed, considering the most recent progress in the field.
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Affiliation(s)
- Kenan Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, 999077, China
| | - Tianyi Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Jiawen You
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, 999077, China
| | - Xudong Zheng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Mei Zhao
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, China
| | - Lijie Zhang
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, China
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, 999077, China
- Hong Kong University of Science and Technology-Shenzhen Research Institute, Nanshan, Shenzhen, 518057, China
| | - Shaoming Huang
- Guangzhou Key Laboratory of Low-Dimensional Materials and Energy Storage Devices, School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
- School of Chemistry and Materials Science, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
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11
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Huang X, Xiong R, Hao C, Beck P, Sa B, Wiebe J, Wiesendanger R. 2D Lateral Heterojunction Arrays with Tailored Interface Band Bending. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308007. [PMID: 38315969 DOI: 10.1002/adma.202308007] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Revised: 12/24/2023] [Indexed: 02/07/2024]
Abstract
Two-dimensional (2D) lateral heterojunction arrays, characterized by well-defined electronic interfaces, hold significant promise for advancing next-generation electronic devices. Despite this potential, the efficient synthesis of high-density lateral heterojunctions with tunable interfacial band alignment remains a challenging. Here, a novel strategy is reported for the fabrication of lateral heterojunction arrays between monolayer Si2Te2 grown on Sb2Te3 (ML-Si2Te2@Sb2Te3) and one-quintuple-layer Sb2Te3 grown on monolayer Si2Te2 (1QL-Sb2Te3@ML-Si2Te2) on a p-doped Sb2Te3 substrate. The site-specific formation of numerous periodically arranged 2D ML-Si2Te2@Sb2Te3/1QL-Sb2Te3@ML-Si2Te2 lateral heterojunctions is realized solely through three epitaxial growth steps of thick-Sb2Te3, ML-Si2Te2, and 1QL-Sb2Te3 films, sequentially. More importantly, the precisely engineering of the interfacial band alignment is realized, by manipulating the substrate's p-doping effect with lateral spatial dependency, on each ML-Si2Te2@Sb2Te3/1QL-Sb2Te3@ML-Si2Te2 junction. Atomically sharp interfaces of the junctions with continuous lattices are observed by scanning tunneling microscopy. Scanning tunneling spectroscopy measurements directly reveal the tailored type-II band bending at the interface. This reported strategy opens avenues for advancing lateral epitaxy technology, facilitating practical applications of 2D in-plane heterojunctions.
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Affiliation(s)
- Xiaochun Huang
- Department of Physics, University of Hamburg, D-20355, Hamburg, Germany
| | - Rui Xiong
- Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Chunxue Hao
- Department of Physics, University of Hamburg, D-20355, Hamburg, Germany
| | - Philip Beck
- Department of Physics, University of Hamburg, D-20355, Hamburg, Germany
| | - Baisheng Sa
- Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Jens Wiebe
- Department of Physics, University of Hamburg, D-20355, Hamburg, Germany
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12
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Park J, Kwak SJ, Kang S, Oh S, Shin B, Noh G, Kim TS, Kim C, Park H, Oh SH, Kang W, Hur N, Chai HJ, Kang M, Kwon S, Lee J, Lee Y, Moon E, Shi C, Lou J, Lee WB, Kwak JY, Yang H, Chung TM, Eom T, Suh J, Han Y, Jeong HY, Kim Y, Kang K. Area-selective atomic layer deposition on 2D monolayer lateral superlattices. Nat Commun 2024; 15:2138. [PMID: 38459015 PMCID: PMC10924103 DOI: 10.1038/s41467-024-46293-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/09/2023] [Accepted: 02/22/2024] [Indexed: 03/10/2024] Open
Abstract
The advanced patterning process is the basis of integration technology to realize the development of next-generation high-speed, low-power consumption devices. Recently, area-selective atomic layer deposition (AS-ALD), which allows the direct deposition of target materials on the desired area using a deposition barrier, has emerged as an alternative patterning process. However, the AS-ALD process remains challenging to use for the improvement of patterning resolution and selectivity. In this study, we report a superlattice-based AS-ALD (SAS-ALD) process using a two-dimensional (2D) MoS2-MoSe2 lateral superlattice as a pre-defining template. We achieved a minimum half pitch size of a sub-10 nm scale for the resulting AS-ALD on the 2D superlattice template by controlling the duration time of chemical vapor deposition (CVD) precursors. SAS-ALD introduces a mechanism that enables selectivity through the adsorption and diffusion processes of ALD precursors, distinctly different from conventional AS-ALD method. This technique facilitates selective deposition even on small pattern sizes and is compatible with the use of highly reactive precursors like trimethyl aluminum. Moreover, it allows for the selective deposition of a variety of materials, including Al2O3, HfO2, Ru, Te, and Sb2Se3.
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Affiliation(s)
- Jeongwon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Seung Jae Kwak
- School of Chemical and Biological Engineering and Institute of Chemical Processes, Seoul National University (SNU), Seoul, Republic of Korea
| | - Sumin Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Saeyoung Oh
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Bongki Shin
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA
| | - Gichang Noh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
- Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, Republic of Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Changhwan Kim
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Hyeonbin Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, Republic of Korea
| | - Seung Hoon Oh
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, Republic of Korea
| | - Woojin Kang
- School of Chemical and Biological Engineering and Institute of Chemical Processes, Seoul National University (SNU), Seoul, Republic of Korea
| | - Namwook Hur
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Hyun-Jun Chai
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Minsoo Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Seongdae Kwon
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Jaehyun Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Yongjoon Lee
- Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Eoram Moon
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Chuqiao Shi
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA
| | - Jun Lou
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA
| | - Won Bo Lee
- School of Chemical and Biological Engineering and Institute of Chemical Processes, Seoul National University (SNU), Seoul, Republic of Korea
| | - Joon Young Kwak
- Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul, Republic of Korea
| | - Heejun Yang
- Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Taek-Mo Chung
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, Republic of Korea
| | - Taeyong Eom
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, Republic of Korea
| | - Joonki Suh
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Yimo Han
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - YongJoo Kim
- Department of Materials Science and Engineering, Korea University, Seoul, Republic of Korea.
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.
- Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.
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13
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Wang J, He L, Zhang Y, Nong H, Li S, Wu Q, Tan J, Liu B. Locally Strained 2D Materials: Preparation, Properties, and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2314145. [PMID: 38339886 DOI: 10.1002/adma.202314145] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2023] [Revised: 01/28/2024] [Indexed: 02/12/2024]
Abstract
2D materials are promising for strain engineering due to their atomic thickness and exceptional mechanical properties. In particular, non-uniform and localized strain can be induced in 2D materials by generating out-of-plane deformations, resulting in novel phenomena and properties, as witnessed in recent years. Therefore, the locally strained 2D materials are of great value for both fundamental studies and practical applications. This review discusses techniques for introducing local strains to 2D materials, and their feasibility, advantages, and challenges. Then, the unique effects and properties that arise from local strain are explored. The representative applications based on locally strained 2D materials are illustrated, including memristor, single photon emitter, and photodetector. Finally, concluding remarks on the challenges and opportunities in the emerging field of locally strained 2D materials are provided.
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Affiliation(s)
- Jingwei Wang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Liqiong He
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Yunhao Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Huiyu Nong
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Shengnan Li
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Qinke Wu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Junyang Tan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
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14
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Shin H, Katiyar AK, Hoang AT, Yun SM, Kim BJ, Lee G, Kim Y, Lee J, Kim H, Ahn JH. Nonconventional Strain Engineering for Uniform Biaxial Tensile Strain in MoS 2 Thin Film Transistors. ACS NANO 2024; 18:4414-4423. [PMID: 38277430 DOI: 10.1021/acsnano.3c10495] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/28/2024]
Abstract
Strain engineering has been employed as a crucial technique to enhance the electrical properties of semiconductors, especially in Si transistor technologies. Recent theoretical investigations have suggested that strain engineering can also markedly enhance the carrier mobility of two-dimensional (2D) transition-metal dichalcogenides (TMDs). The conventional methods used in strain engineering for Si and other bulk semiconductors are difficult to adapt to ultrathin 2D TMDs. Here, we report a strain engineering approach to apply the biaxial tensile strain to MoS2. Metal-organic chemical vapour deposition (MOCVD)-grown large-area MoS2 films were transferred onto SiO2/Si substrate, followed by the selective removal of the underneath Si. The release of compressive residual stress in the oxide layer induces strain in MoS2 on top of the SiO2 layer. The amount of strain can be precisely controlled by the thickness of oxide stressors. After the transistors were fabricated with strained MoS2 films, the array of strained transistors was transferred onto plastic substrates. This process ensured that the MoS2 channels maintained a consistent tensile strain value across a large area.
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Affiliation(s)
- Heechang Shin
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Seok Min Yun
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Gwanjin Lee
- Department of Physics and Chemistry, DGIST, Daegu 42988, Republic of Korea
| | - Youngjae Kim
- Department of Physics and Chemistry, DGIST, Daegu 42988, Republic of Korea
- School of Physics, KIAS, Seoul 02455, Republic of Korea
| | - JaeDong Lee
- Department of Physics and Chemistry, DGIST, Daegu 42988, Republic of Korea
| | - Hyunmin Kim
- Department of Interdisciplinary Engineering, DGIST, Daegu 42988, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
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15
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Dechamps S, Nguyen VH, Charlier JC. Lateral junctions of transition metal dichalcogenides as ballistic channels for straintronic applications. NANOTECHNOLOGY 2024; 35:175201. [PMID: 38211329 DOI: 10.1088/1361-6528/ad1d78] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Accepted: 01/11/2024] [Indexed: 01/13/2024]
Abstract
In the context of advanced nanoelectronics, two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are gaining considerable interest due to their ultimate thinness, clean surface and high carrier mobility. The engineering prospects offered by those materials are further enlarged by the recent realization of atomically sharp TMD-based lateral junctions, whose electronic properties are governed by strain effects arising from the constituents lattice mismatch. Although most theoretical studies considered only misfit strain, first-principles simulations are employed here to investigate the transport properties under external deformation of a three-terminal device constructed from a MoS2/WSe2/MoS2junction. Large modulation of the current is reported owing to the change in band offset, illustrating the importance of strain on the p-n junction characteristics. The device operation is demonstrated for both local and global deformations, even for ultra-short channels, suggesting potential applications for ultra-thin body straintronics.
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Affiliation(s)
- Samuel Dechamps
- Université Grenoble Alpes, CEA, IRIG-MEM, 38000 Grenoble, France
| | - Viet-Hung Nguyen
- Institute of Condensed Matter and Nanosciences, Université catholique de Louvain (UCLouvain), Chemin des étoiles 8, B-1348 Louvain-la-Neuve, Belgium
| | - Jean-Christophe Charlier
- Institute of Condensed Matter and Nanosciences, Université catholique de Louvain (UCLouvain), Chemin des étoiles 8, B-1348 Louvain-la-Neuve, Belgium
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16
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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17
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Naumis GG, Herrera SA, Poudel SP, Nakamura H, Barraza-Lopez S. Mechanical, electronic, optical, piezoelectric and ferroic properties of strained graphene and other strained monolayers and multilayers: an update. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 87:016502. [PMID: 37879327 DOI: 10.1088/1361-6633/ad06db] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2023] [Accepted: 10/25/2023] [Indexed: 10/27/2023]
Abstract
This is an update of a previous review (Naumiset al2017Rep. Prog. Phys.80096501). Experimental and theoretical advances for straining graphene and other metallic, insulating, ferroelectric, ferroelastic, ferromagnetic and multiferroic 2D materials were considered. We surveyed (i) methods to induce valley and sublattice polarisation (P) in graphene, (ii) time-dependent strain and its impact on graphene's electronic properties, (iii) the role of local and global strain on superconductivity and other highly correlated and/or topological phases of graphene, (iv) inducing polarisationPon hexagonal boron nitride monolayers via strain, (v) modifying the optoelectronic properties of transition metal dichalcogenide monolayers through strain, (vi) ferroic 2D materials with intrinsic elastic (σ), electric (P) and magnetic (M) polarisation under strain, as well as incipient 2D multiferroics and (vii) moiré bilayers exhibiting flat electronic bands and exotic quantum phase diagrams, and other bilayer or few-layer systems exhibiting ferroic orders tunable by rotations and shear strain. The update features the experimental realisations of a tunable two-dimensional Quantum Spin Hall effect in germanene, of elemental 2D ferroelectric bismuth, and 2D multiferroic NiI2. The document was structured for a discussion of effects taking place in monolayers first, followed by discussions concerning bilayers and few-layers, and it represents an up-to-date overview of exciting and newest developments on the fast-paced field of 2D materials.
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Affiliation(s)
- Gerardo G Naumis
- Departamento de Sistemas Complejos, Instituto de Física, Universidad Nacional Autónoma de México (UNAM), Apdo. Postal 20-364, CDMX, 01000, Mexico
| | - Saúl A Herrera
- Departamento de Sistemas Complejos, Instituto de Física, Universidad Nacional Autónoma de México (UNAM), Apdo. Postal 20-364, CDMX, 01000, Mexico
| | - Shiva P Poudel
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
| | - Hiro Nakamura
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
| | - Salvador Barraza-Lopez
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
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18
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Mu H, Zhuang R, Cui N, Cai S, Yu W, Yuan J, Zhang J, Liu H, Mei L, He X, Mei Z, Zhang G, Bao Q, Lin S. Alternating BiI 3-BiI van der Waals Photodetector with Low Dark Current and High-Performance Photodetection. ACS NANO 2023; 17:21317-21327. [PMID: 37862706 DOI: 10.1021/acsnano.3c05849] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/22/2023]
Abstract
The emerging two-dimensional (2D) van der Waals (vdW) materials and their heterostructures hold great promise for optoelectronics and photonic applications beyond strictly lattice-matching constraints and grade interfaces. However, previous photodetectors and optoelectronic devices rely on relatively simple vdW heterostructures with one or two blocks. The realization of high-order heterostructures has been exponentially challenging due to conventional layer-by-layer arduous restacking or sequential synthesis. In this study, we present an approach involving the direct exfoliation of high-quality BiI3-BiI heterostructure nanosheets with alternating blocks, derived from solution-grown binary heterocrystals. These heterostructure-based photodetectors offer several notable advantages. Leveraging the "active layer energetics" of BiI layers and the establishment of a significant depletion region, our photodetector demonstrates a significant reduction in dark current compared with pure BiI3 devices. Specifically, the photodetector achieves an extraordinarily low dark current (<9.2 × 10-14 A at 5 V bias voltage), an impressive detectivity of 8.8 × 1012 Jones at 638 nm, and a rapid response time of 3.82 μs. These characteristics surpass the performance of other metal-semiconductor-metal (MSM) photodetectors based on various 2D materials and structures at visible wavelengths. Moreover, our heterostructure exhibits a broad-band photoresponse, covering the visible, near-infrared (NIR)-I, and NIR-II regions. In addition to these promising results, our heterostructure also demonstrated the potential for flexible and imaging applications. Overall, our study highlights the potential of alternating vdW heterostructures for future optoelectronics with low power consumption, fast response, and flexible requirements.
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Affiliation(s)
- Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Renzhong Zhuang
- Fujian Provincial Key Laboratory of Welding Quality Intelligent Evaluation, Longyan University, Longyan 364012, P. R. China
| | - Nan Cui
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Songhua Cai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hunghom, Kowloon 999077, Hong Kong, P. R. China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Jian Yuan
- School of Physics and Electronic Information, Huaibei Normal University, Huaibei 235000, P. R. China
| | - Jingni Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Hao Liu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Luyao Mei
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Xiaoyue He
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Zengxia Mei
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
- Institute of Physics, Chinese Academy of Science, Beijing 100190, P. R. China
| | - Qiaoliang Bao
- Institute of Energy Materials Science (IEMS), University of Shanghai for Science and Technology, Shanghai 200093, P. R. China
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
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19
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Chang S, Yan Y, Geng Y. Local Nanostrain Engineering of Monolayer MoS 2 Using Atomic Force Microscopy-Based Thermomechanical Nanoindentation. NANO LETTERS 2023; 23:9219-9226. [PMID: 37824813 DOI: 10.1021/acs.nanolett.3c01809] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/14/2023]
Abstract
Strain engineering in two-dimensional materials (2DMs) has important application potential for electronic and optoelectronic devices. However, achieving precise spatial control, adjustable sizing, and permanent strain with nanoscale resolution remains challenging. Herein, a thermomechanical nanoindentation method is introduced, inspired by skin edema caused by mosquito bites, which can induce localized nanostrain and bandgap modulation in monolayer molybdenum disulfide (MoS2) transferred onto a poly(methyl methacrylate) film utilizing a heated atomic force microscopy nanotip. Via adjustment of the machining parameters, the strains of MoS2 are manipulated, achieving an average strain of ≤2.6% on the ring-shaped expansion structure. The local bandgap of MoS2 is spatially modulated using three types of nanostructures. Among them, the nanopit has the largest range of bandgap regulation, with a substantial change of 56 meV. These findings demonstrate the capability of the proposed method to create controllable and reproducible nanostrains in 2DMs.
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Affiliation(s)
- Shunyu Chang
- The State Key Laboratory of Robotics and Systems, Robotics Institute, Harbin Institute of Technology, Harbin, Heilongjiang 150080, P. R. China
- Center for Precision Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, P. R. China
| | - Yongda Yan
- The State Key Laboratory of Robotics and Systems, Robotics Institute, Harbin Institute of Technology, Harbin, Heilongjiang 150080, P. R. China
- Center for Precision Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, P. R. China
| | - Yanquan Geng
- The State Key Laboratory of Robotics and Systems, Robotics Institute, Harbin Institute of Technology, Harbin, Heilongjiang 150080, P. R. China
- Center for Precision Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, P. R. China
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20
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Lemos JS, Blundo E, Polimeni A, Pimenta MA, Righi A. Exciton-Phonon Interactions in Strained Domes of Monolayer MoS 2 Studied by Resonance Raman Spectroscopy. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2722. [PMID: 37836363 PMCID: PMC10574763 DOI: 10.3390/nano13192722] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Revised: 09/26/2023] [Accepted: 10/01/2023] [Indexed: 10/15/2023]
Abstract
This work describes a resonance Raman study performed in the domes of monolayer MoS2 using 23 different laser excitation energies covering the visible and near-infrared (NIR) ranges. The multiple excitation results allowed us to investigate the exciton-phonon interactions of different phonons (A'1, E', and LA) with different excitonic optical transitions in biaxially strained monolayer MoS2. The analysis of the intensities of the two first-order peaks, A'1 and E', and the double-resonance 2LA Raman band as a function of the laser excitation furnished the values of the energies of the indirect exciton and the direct excitonic transitions in the strained MoS2 domes. It was noticed that the out-of-plane A'1 phonon mode is significantly enhanced only by the indirect exciton I and the C exciton, whereas the in-plane E' mode is only enhanced by the C exciton of the MoS2 dome, thus revealing the weak interaction of these phonons with the A and B excitons in the strained MoS2 domes. On the other hand, the 2LA Raman band is significantly enhanced at the indirect exciton I and by the A (or B) exciton but not enhanced by the C exciton, thus showing that the LA edge phonons that participate in the double-resonance process in MoS2 have a weak interaction with the C exciton.
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Affiliation(s)
- Jessica S. Lemos
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte 31270-901, MG, Brazil;
| | - Elena Blundo
- Dipartimento di Fisica, Sapienza Università di Roma, 00185 Roma, Italy; (E.B.); (A.P.)
| | - Antonio Polimeni
- Dipartimento di Fisica, Sapienza Università di Roma, 00185 Roma, Italy; (E.B.); (A.P.)
| | - Marcos A. Pimenta
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte 31270-901, MG, Brazil;
- Departamento de Física, Universidade Federal do Ouro Preto, Campus Universitário Morro do Cruzeiro, ICEB, Ouro Preto 35400-000, MG, Brazil
| | - Ariete Righi
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte 31270-901, MG, Brazil;
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21
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Singh A, Yuan B, Rahman MH, Yang H, De A, Park JY, Zhang S, Huang L, Mannodi-Kanakkithodi A, Pennycook TJ, Dou L. Two-Dimensional Halide Pb-Perovskite-Double Perovskite Epitaxial Heterostructures. J Am Chem Soc 2023; 145:19885-19893. [PMID: 37651697 DOI: 10.1021/jacs.3c06127] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]
Abstract
Epitaxial heterostructures of two-dimensional (2D) halide perovskites offer a new platform for studying intriguing structural, optical, and electronic properties. However, difficulties with the stability of Pb- and Sn-based heterostructures have repeatedly slowed the progress. Recently, Pb-free halide double perovskites are gaining a lot of attention due to their superior stability and greater chemical diversity, but they have not been successfully incorporated into epitaxial heterostructures for further investigation. Here, we report epitaxial core-shell heterostructures via growing Pb-free double perovskites (involving combinations of Ag(I)-Bi(III), Ag-Sb, Ag-In, Na-Bi, Na-Sb, and Na-In) around Pb perovskite 2D crystals. Distinct from Pb-Pb and Pb-Sn perovskite heterostructures, growths of the Pb-free shell at 45° on the (100) surface of the lead perovskite core are observed in all Pb-free cases. The in-depth structural analysis carried out with electron diffraction unequivocally demonstrates the growth of the Pb-free shell along the [110] direction of the Pb perovskite, which is likely due to the relatively lower surface energy of the (110) surface. Furthermore, an investigation of anionic interdiffusion across heterostructure interfaces under the influence of heat was carried out. Interestingly, halide anion diffusion in the Pb-free 2D perovskites is found to be significantly suppressed as compared to Pb-based 2D perovskites. The great structural tunability and excellent stability of Pb-free perovskite heterostructures may find uses in electronic and optoelectronic devices in the near future.
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Affiliation(s)
- Ajeet Singh
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Department of Chemistry, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Biao Yuan
- EMAT, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
| | - Md Habibur Rahman
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Hanjun Yang
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States
| | - Angana De
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States
| | - Jee Yung Park
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Shuchen Zhang
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Libai Huang
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States
| | | | | | - Letian Dou
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States
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22
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Yuan L, Zheng B, Zhao Q, Kempt R, Brumme T, Kuc AB, Ma C, Deng S, Pan A, Huang L. Strong Dipolar Repulsion of One-Dimensional Interfacial Excitons in Monolayer Lateral Heterojunctions. ACS NANO 2023; 17:15379-15387. [PMID: 37540827 DOI: 10.1021/acsnano.2c12903] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/06/2023]
Abstract
Repulsive and long-range exciton-exciton interactions are crucial for the exploration of one-dimensional (1D) correlated quantum phases in the solid state. However, the experimental realization of nanoscale confinement of a 1D dipolar exciton has thus far been limited. Here, we demonstrate atomically precise lateral heterojunctions based at transitional-metal dichalcogenides (TMDCs) as a platform for 1D dipolar excitons. The dynamics and transport of the interfacial charge transfer excitons in a type II WSe2-WS1.16Se0.84 lateral heterostructure were spatially and temporally imaged using ultrafast transient reflection microscopy. The expansion of the exciton cloud driven by dipolar repulsion was found to be strongly density dependent and highly anisotropic. The interaction strength between the 1D excitons was determined to be ∼3.9 × 10-14 eV cm-2, corresponding to a dipolar length of 310 nm, which is a factor of 2-3 larger than the interlayer excitons at two-dimensional van der Waals vertical interfaces. These results suggest 1D dipolar excitons with large static in-plane dipole moments in lateral TMDC heterojunctions as an exciting system for investigating quantum many-body physics.
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Affiliation(s)
- Long Yuan
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47906, United States
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230052, China
| | - Biyuan Zheng
- College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410012, China
| | - Qiuchen Zhao
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47906, United States
| | - Roman Kempt
- Technische Universitat Dresden, 01062 Dresden, Germany
| | - Thomas Brumme
- Technische Universitat Dresden, 01062 Dresden, Germany
| | - Agnieszka B Kuc
- Helmholtz-Zentrum Dresden-Rossendorf, Abteilung Ressourcenökologie, Forschungsstelle Leipzig, Permoserstraße 15, 04318 Leipzig, Germany
| | - Chao Ma
- College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410012, China
| | - Shibin Deng
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47906, United States
| | - Anlian Pan
- College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410012, China
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Changsha, Hunan 410012, China
- State Key Laboratory of Chemo/Biosensing and Chemometrics, Changsha, Hunan 410012, China
| | - Libai Huang
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47906, United States
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23
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Park J. Fine tuning an atomic mesh. Science 2023; 381:604-605. [PMID: 37561858 DOI: 10.1126/science.adj1420] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/12/2023]
Abstract
Controlling the angle in atomic meshes could result in quantum properties on demand.
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Affiliation(s)
- Jiwoong Park
- Department of Chemistry, Pritzker School of Molecular Engineering, and James Franck Institute, University of Chicago, Chicago, IL, USA
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24
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Shi C, Mao N, Yang Y, Kong J, Han Y. Semi-automated Hierarchical Clustering Model for 4D-STEM Datasets. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2023; 29:709-710. [PMID: 37613161 DOI: 10.1093/micmic/ozad067.349] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/25/2023]
Affiliation(s)
- Chuqiao Shi
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, United States
| | - Nannan Mao
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, United States
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States
| | - Yao Yang
- Department of Chemistry, University of California, Berkeley, CA, United States
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, United States
| | - Yimo Han
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, United States
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25
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Mireles A, Shi C, Park J, Shin B, Sung SH, Ophus C, Hovden R, Kang K, Han Y. Using 4D-STEM to Map 3D Morphologies of 2D Materials. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2023; 29:262-263. [PMID: 37613234 DOI: 10.1093/micmic/ozad067.118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/25/2023]
Affiliation(s)
- Adan Mireles
- Applied Physics Graduate Program, Smalley-Curl Institute, Rice University, Houston, TX, United States
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, United States
| | - Chuqiao Shi
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, United States
| | - Jeongwon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Bongki Shin
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, United States
| | - Suk Hyun Sung
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, United States
| | - Colin Ophus
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, United States
| | - Robert Hovden
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, United States
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Yimo Han
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, United States
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26
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Sitek J, Czerniak-Łosiewicz K, Gertych AP, Giza M, Dąbrowski P, Rogala M, Wilczyński K, Kaleta A, Kret S, Conran BR, Wang X, McAleese C, Macha M, Radenović A, Zdrojek M, Pasternak I, Strupiński W. Selective Growth of van der Waals Heterostructures Enabled by Electron-Beam Irradiation. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37418753 PMCID: PMC10360032 DOI: 10.1021/acsami.3c02892] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/09/2023]
Abstract
Van der Waals heterostructures (vdWHSs) enable the fabrication of complex electronic devices based on two-dimensional (2D) materials. Ideally, these vdWHSs should be fabricated in a scalable and repeatable way and only in the specific areas of the substrate to lower the number of technological operations inducing defects and impurities. Here, we present a method of selective fabrication of vdWHSs via chemical vapor deposition by electron-beam (EB) irradiation. We distinguish two growth modes: positive (2D materials nucleate on the irradiated regions) on graphene and tungsten disulfide (WS2) substrates, and negative (2D materials do not nucleate on the irradiated regions) on the graphene substrate. The growth mode is controlled by limiting the air exposure of the irradiated substrate and the time between irradiation and growth. We conducted Raman mapping, Kelvin-probe force microscopy, X-ray photoelectron spectroscopy, and density-functional theory modeling studies to investigate the selective growth mechanism. We conclude that the selective growth is explained by the competition of three effects: EB-induced defects, adsorption of carbon species, and electrostatic interaction. The method here is a critical step toward the industry-scale fabrication of 2D-materials-based devices.
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Affiliation(s)
- Jakub Sitek
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
- CENTERA Laboratory, Institute for High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
| | | | - Arkadiusz P Gertych
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Małgorzata Giza
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Paweł Dąbrowski
- Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź, Poland
| | - Maciej Rogala
- Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź, Poland
| | - Konrad Wilczyński
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Anna Kaleta
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
| | - Sławomir Kret
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
| | - Ben R Conran
- AIXTRON Ltd, Buckingway Business Park, Anderson Road, Swavesey, Cambridge CB24 4FQ, U.K
| | - Xiaochen Wang
- AIXTRON Ltd, Buckingway Business Park, Anderson Road, Swavesey, Cambridge CB24 4FQ, U.K
| | - Clifford McAleese
- AIXTRON Ltd, Buckingway Business Park, Anderson Road, Swavesey, Cambridge CB24 4FQ, U.K
| | - Michał Macha
- Laboratory of Nanoscale Biology, Swiss Federal Institute of Technology Lausanne (EPFL), Station 17, CH-015 Lausanne, Switzerland
| | - Aleksandra Radenović
- Laboratory of Nanoscale Biology, Swiss Federal Institute of Technology Lausanne (EPFL), Station 17, CH-015 Lausanne, Switzerland
| | - Mariusz Zdrojek
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Iwona Pasternak
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Włodek Strupiński
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
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27
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Shi X, Kurman Y, Shentcis M, Wong LJ, García de Abajo FJ, Kaminer I. Free-electron interactions with van der Waals heterostructures: a source of focused X-ray radiation. LIGHT, SCIENCE & APPLICATIONS 2023; 12:148. [PMID: 37321995 DOI: 10.1038/s41377-023-01141-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Subscribe] [Scholar Register] [Received: 07/22/2022] [Revised: 03/06/2023] [Accepted: 03/30/2023] [Indexed: 06/17/2023]
Abstract
The science and technology of X-ray optics have come far, enabling the focusing of X-rays for applications in high-resolution X-ray spectroscopy, imaging, and irradiation. In spite of this, many forms of tailoring waves that had substantial impact on applications in the optical regime have remained out of reach in the X-ray regime. This disparity fundamentally arises from the tendency of refractive indices of all materials to approach unity at high frequencies, making X-ray-optical components such as lenses and mirrors much harder to create and often less efficient. Here, we propose a new concept for X-ray focusing based on inducing a curved wavefront into the X-ray generation process, resulting in the intrinsic focusing of X-ray waves. This concept can be seen as effectively integrating the optics to be part of the emission mechanism, thus bypassing the efficiency limits imposed by X-ray optical components, enabling the creation of nanobeams with nanoscale focal spot sizes and micrometer-scale focal lengths. Specifically, we implement this concept by designing aperiodic vdW heterostructures that shape X-rays when driven by free electrons. The parameters of the focused hotspot, such as lateral size and focal depth, are tunable as a function of an interlayer spacing chirp and electron energy. Looking forward, ongoing advances in the creation of many-layer vdW heterostructures open unprecedented horizons of focusing and arbitrary shaping of X-ray nanobeams.
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Affiliation(s)
- Xihang Shi
- Solid State Institute and Faculty of Electrical and Computer Engineering, Technion - Israel Institute of Technology, Haifa, 32000, Israel
| | - Yaniv Kurman
- Solid State Institute and Faculty of Electrical and Computer Engineering, Technion - Israel Institute of Technology, Haifa, 32000, Israel
| | - Michael Shentcis
- Solid State Institute and Faculty of Electrical and Computer Engineering, Technion - Israel Institute of Technology, Haifa, 32000, Israel
| | - Liang Jie Wong
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - F Javier García de Abajo
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860, Spain
- ICREA-Institució Catalana de Recerca i Estudis Avançats, Passeig Lluís Companys 23, Barcelona, 08010, Spain
| | - Ido Kaminer
- Solid State Institute and Faculty of Electrical and Computer Engineering, Technion - Israel Institute of Technology, Haifa, 32000, Israel.
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28
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Ramsden H, Sarkar S, Wang Y, Zhu Y, Kerfoot J, Alexeev EM, Taniguchi T, Watanabe K, Tongay S, Ferrari AC, Chhowalla M. Nanoscale Cathodoluminescence and Conductive Mode Scanning Electron Microscopy of van der Waals Heterostructures. ACS NANO 2023. [PMID: 37319105 DOI: 10.1021/acsnano.3c03261] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
van der Waals heterostructures (vdW-HSs) integrate dissimilar materials to form complex devices. These rely on the manipulation of charges at multiple interfaces. However, at present, submicrometer variations in strain, doping, or electrical breakages may exist undetected within a device, adversely affecting macroscale performance. Here, we use conductive mode and cathodoluminescence scanning electron microscopy (CM-SEM and SEM-CL) to investigate these phenomena. As a model system, we use a monolayer WSe2 (1L-WSe2) encapsulated in hexagonal boron nitride (hBN). CM-SEM allows for quantification of the flow of electrons during the SEM measurements. During electron irradiation at 5 keV, up to 70% of beam electrons are deposited into the vdW-HS and can subsequently migrate to the 1L-WSe2. This accumulation of charge leads to dynamic doping of 1L-WSe2, reducing its CL efficiency by up to 30% over 30 s. By providing a path for excess electrons to leave the sample, near full restoration of the initial CL signal can be achieved. These results indicate that the trapping of charges in vdW-HSs during electron irradiation must be considered, in order to obtain and maintain optimal performance of vdW-HS devices during processes such as e-beam lithography or SEM. Thus, CM-SEM and SEM-CL form a toolkit through which nanoscale characterization of vdW-HS devices can be performed, allowing electrical and optical properties to be correlated.
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Affiliation(s)
- Hugh Ramsden
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
- Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
| | - Soumya Sarkar
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
| | - Yan Wang
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
| | - Yiru Zhu
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
| | - James Kerfoot
- Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
| | - Evgeny M Alexeev
- Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
| | - Manish Chhowalla
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
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Sutter P, Komsa HP, Kisslinger K, Sutter E. Lateral Integration of SnS and GeSe van der Waals Semiconductors: Interface Formation, Electronic Structure, and Nanoscale Optoelectronics. ACS NANO 2023; 17:9552-9564. [PMID: 37144978 DOI: 10.1021/acsnano.3c02411] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
The emergence of atomically thin crystals has allowed extending materials integration to lateral heterostructures where different 2D materials are covalently connected in the plane. The concept of lateral heterostructures can be generalized to thicker layered crystals, provided that a suitably faceted seed crystal presents edges to which a compatible second van der Waals material can be attached layer by layer. Here, we examine the possibility of integrating multilayer crystals of the group IV monochalcogenides SnS and GeSe, which have the same crystal structure, small lattice mismatch, and similar bandgaps. In a two-step growth process, lateral epitaxy of GeSe on the sidewalls of multilayer SnS flakes (obtained by vapor transport of a SnS2 precursor on graphite) yields heterostructures of laterally stitched crystalline GeSe and SnS without any detectable vertical overgrowth of the SnS seeds and with sharp lateral interfaces. Combined cathodoluminescence spectroscopy and ab initio calculations show the effects of small band offsets on carrier transport and radiative recombination near the interface. The results demonstrate the possibility of forming atomically connected lateral interfaces across many van der Waals layers, which is promising for manipulating optoelectronics, photonics, and for managing charge- and thermal transport.
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Affiliation(s)
- Peter Sutter
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Hannu-Pekka Komsa
- Microelectronics Research Unit, University of Oulu, FI-90014 Oulu, Finland
| | - Kim Kisslinger
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Eli Sutter
- Department of Mechanical & Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
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30
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Rosati R, Paradisanos I, Huang L, Gan Z, George A, Watanabe K, Taniguchi T, Lombez L, Renucci P, Turchanin A, Urbaszek B, Malic E. Interface engineering of charge-transfer excitons in 2D lateral heterostructures. Nat Commun 2023; 14:2438. [PMID: 37117167 PMCID: PMC10147613 DOI: 10.1038/s41467-023-37889-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/14/2022] [Accepted: 04/04/2023] [Indexed: 04/30/2023] Open
Abstract
The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be confirmed. Here, we present a microscopic study investigating signatures of bound CT excitons in photoluminescence spectra at the interface of hBN-encapsulated lateral MoSe2-WSe2 heterostructures. Based on a fully microscopic and material-specific theory, we reveal the many-particle processes behind the formation of CT excitons and how they can be tuned via interface- and dielectric engineering. For junction widths smaller than the Coulomb-induced Bohr radius we predict the appearance of a low-energy CT exciton. The theoretical prediction is compared with experimental low-temperature photoluminescence measurements showing emission in the bound CT excitons energy range. We show that for hBN-encapsulated heterostructures, CT excitons exhibit small binding energies of just a few tens meV and at the same time large dipole moments, making them promising materials for optoelectronic applications (benefiting from an efficient exciton dissociation and fast dipole-driven exciton propagation). Our joint theory-experiment study presents a significant step towards a microscopic understanding of optical properties of technologically promising 2D lateral heterostructures.
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Affiliation(s)
- Roberto Rosati
- Department of Physics, Philipps-Universität Marburg, Renthof 7, D-35032, Marburg, Germany.
| | - Ioannis Paradisanos
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077, Toulouse, France
| | - Libai Huang
- Department of Chemistry, Purdue University, West Lafayette, IN, USA
| | - Ziyang Gan
- Friedrich Schiller University Jena, Institute of Physical Chemistry, 07743, Jena, Germany
- Abbe Centre of Photonics, 07745, Jena, Germany
| | - Antony George
- Friedrich Schiller University Jena, Institute of Physical Chemistry, 07743, Jena, Germany
- Abbe Centre of Photonics, 07745, Jena, Germany
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Laurent Lombez
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077, Toulouse, France
| | - Pierre Renucci
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077, Toulouse, France
| | - Andrey Turchanin
- Friedrich Schiller University Jena, Institute of Physical Chemistry, 07743, Jena, Germany
- Abbe Centre of Photonics, 07745, Jena, Germany
| | - Bernhard Urbaszek
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077, Toulouse, France
- Institute of Condensed Matter Physics, Technische Universität Darmstadt, 64289, Darmstadt, Germany
| | - Ermin Malic
- Department of Physics, Philipps-Universität Marburg, Renthof 7, D-35032, Marburg, Germany
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31
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Ogura H, Kawasaki S, Liu Z, Endo T, Maruyama M, Gao Y, Nakanishi Y, Lim HE, Yanagi K, Irisawa T, Ueno K, Okada S, Nagashio K, Miyata Y. Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics. ACS NANO 2023; 17:6545-6554. [PMID: 36847351 DOI: 10.1021/acsnano.2c11927] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In-plane heterostructures of transition metal dichalcogenides (TMDCs) have attracted much attention for high-performance electronic and optoelectronic devices. To date, mainly monolayer-based in-plane heterostructures have been prepared by chemical vapor deposition (CVD), and their optical and electrical properties have been investigated. However, the low dielectric properties of monolayers prevent the generation of high concentrations of thermally excited carriers from doped impurities. To solve this issue, multilayer TMDCs are a promising component for various electronic devices due to the availability of degenerate semiconductors. Here, we report the fabrication and transport properties of multilayer TMDC-based in-plane heterostructures. The multilayer in-plane heterostructures are formed through CVD growth of multilayer MoS2 from the edges of mechanically exfoliated multilayer flakes of WSe2 or NbxMo1-xS2. In addition to the in-plane heterostructures, we also confirmed the vertical growth of MoS2 on the exfoliated flakes. For the WSe2/MoS2 sample, an abrupt composition change is confirmed by cross-sectional high-angle annular dark-field scanning transmission electron microscopy. Electrical transport measurements reveal that a tunneling current flows at the NbxMo1-xS2/MoS2 in-plane heterointerface, and the band alignment is changed from a staggered gap to a broken gap by electrostatic electron doping of MoS2. The formation of a staggered gap band alignment of NbxMo1-xS2/MoS2 is also supported by first-principles calculations.
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Affiliation(s)
- Hiroto Ogura
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Seiya Kawasaki
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Zheng Liu
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan
| | - Takahiko Endo
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Mina Maruyama
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Yanlin Gao
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Yusuke Nakanishi
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Hong En Lim
- Department of Chemistry, Saitama University, Saitama 338-8570, Japan
| | - Kazuhiro Yanagi
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Toshifumi Irisawa
- Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan
| | - Keiji Ueno
- Department of Chemistry, Saitama University, Saitama 338-8570, Japan
| | - Susumu Okada
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
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32
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Xing F, Ji G, Li Z, Zhong W, Wang F, Liu Z, Xin W, Tian J. Preparation, properties and applications of two-dimensional superlattices. MATERIALS HORIZONS 2023; 10:722-744. [PMID: 36562255 DOI: 10.1039/d2mh01206e] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
As a combination concept of a 2D material and a superlattice, two-dimensional superlattices (2DSs) have attracted increasing attention recently. The natural advantages of 2D materials in their properties, dimension, diversity and compatibility, and their gradually improved technologies for preparation and device fabrication serve as solid foundations for the development of 2DSs. Compared with the existing 2D materials and even their heterostructures, 2DSs relate to more materials and elaborate architectures, leading to novel systems with more degrees of freedom to modulate material properties at the nanoscale. Here, three typical types of 2DSs, including the component, strain-induced and moiré superlattices, are reviewed. The preparation methods, properties and state-of-the-art applications of each type are summarized. An outlook of the challenges and future developments is also presented. We hope that this work can provide a reference for the development of 2DS-related research.
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Affiliation(s)
- Fei Xing
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo, 255049, China
| | - Guangmin Ji
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo, 255049, China
| | - Zongwen Li
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo, 255049, China
| | - Weiheng Zhong
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China.
| | - Feiyue Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Zhibo Liu
- Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China.
| | - Wei Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China.
| | - Jianguo Tian
- Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China.
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33
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Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 22] [Impact Index Per Article: 22.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
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Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
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34
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Ren K, Shu H, Wang K, Qin H. Two-dimensional MX 2Y 4 systems: ultrahigh carrier transport and excellent hydrogen evolution reaction performances. Phys Chem Chem Phys 2023; 25:4519-4527. [PMID: 36661890 DOI: 10.1039/d2cp04224j] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Abstract
Very recently, two-dimensional MoSi2N4 has been synthetized (Y.-L. Hong, Z. Liu, L. Wang, T. Zhou, W. Ma, C. Xu, S. Feng, L. Chen, M.-L. Chen and D.-M. Sun, Chemical vapor deposition of layered two-dimensional MoSi2N4 materials, Science, 2020, 369, 670-674.). In this work, we systematically explore the mechanical, electronic, and catalytic properties of the MX2Y4 (M = Cr, Hf, Mo, Ti, W, Zr; X = Si, Ge; Y = N, P, As) monolayers by first-principles calculations. These observed monolayers exhibit an isotropic Young's moduli of 165-514 N m-1 and a Poisson's ratio of 0.26-0.33. The calculated band structures indicate that their bandgaps are in the range of 0.49-2.05 eV at the HSE06 level. In particular, a high electron mobility of about 1.04 × 104 cm2 V-1 s-1 is observed in TiSi2N4 monolayers, which shows potential for high-speed electronic devices. MX2Y4 monolayers also reveal decent performances in the hydrogen evolution reaction. More importantly, the Gibbs free energy change of the TiSi2N4 (ZrSi2N4) monolayer is as small as 0.078 eV (-0.035 eV), even being comparable with that of Pt (-0.09 eV). This investigation suggests that the MoSi2N4 family monolayers have potential advanced applications such as photocatalytic, electrocatalytic, and photovoltaic devices.
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Affiliation(s)
- Kai Ren
- School of Mechanical and Electronic Engineering, Nanjing Forestry University, Nanjing 210037, China.
| | - Huabing Shu
- School of Science, Jiangsu University of Science and Technology, Zhenjiang 212001, China
| | - Ke Wang
- School of Automation, Xi'an University of Posts & Telecommunications, Shaanxi, 710121, China
| | - Huasong Qin
- Laboratory for Multiscale Mechanics and Medical Science, SV LAB, School of Aerospace, Xi'an Jiaotong University, Xi'an 710049, China.
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35
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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36
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Avilés MO, Jelken J, Lagugné-Labarthet F. Periodic Spiral Ripples on VS 2 Flakes: A Tip-Enhanced Raman Investigation. J Phys Chem Lett 2022; 13:9771-9776. [PMID: 36226836 DOI: 10.1021/acs.jpclett.2c02555] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Using atmospheric-pressure chemical vapor deposition, we have synthesized vanadium disulfide (VS2) flakes with a metallic 1T phase that display nanoscale spiral surface ripples. To understand the origin of these chiral patterns in these transition metal dichalcogenides, tip-enhanced Raman spectroscopy and Kelvin probe force microscopies were jointly used to investigate their crystal structure, possible oxidation, and electronic properties, respectively. We found that the surface corrugation consists of small crystalline domains with distinct orientations. The change in local orientation is observed concomitantly with a spectral shift of the lattice modes of VS2 and results in the formation of grain boundaries between the domains with distinct orientation. Additionally, the periodic surface structure is modulating the work function of VS2 by 14 meV.
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Affiliation(s)
- María Olivia Avilés
- The Center for Advanced Materials and Biomaterials (CAMBR), Department of Chemistry, The University of Western Ontario (Western University), London, OntarioN6A 5B7, Canada
| | - Joachim Jelken
- The Center for Advanced Materials and Biomaterials (CAMBR), Department of Chemistry, The University of Western Ontario (Western University), London, OntarioN6A 5B7, Canada
| | - François Lagugné-Labarthet
- The Center for Advanced Materials and Biomaterials (CAMBR), Department of Chemistry, The University of Western Ontario (Western University), London, OntarioN6A 5B7, Canada
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37
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Xiong Y, Xu D, Feng Y, Zhang G, Lin P, Chen X. P-Type 2D Semiconductors for Future Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2206939. [PMID: 36245325 DOI: 10.1002/adma.202206939] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Revised: 09/30/2022] [Indexed: 06/16/2023]
Abstract
2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate-control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors-based integrated circuits suitable for future electronics. N-type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p-type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high-speed and low-power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p-type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post-Moore era.
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Affiliation(s)
- Yunhai Xiong
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Duo Xu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yiping Feng
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Guangjie Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Pei Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, China
| | - Xiang Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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38
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Zhang Y, Lv Q, Wang H, Zhao S, Xiong Q, Lv R, Zhang X. Simultaneous electrical and thermal rectification in a monolayer lateral heterojunction. Science 2022; 378:169-175. [PMID: 36227999 DOI: 10.1126/science.abq0883] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
Efficient waste heat dissipation has become increasingly challenging as transistor size has decreased to nanometers. As governed by universal Umklapp phonon scattering, the thermal conductivity of semiconductors decreases at higher temperatures and causes heat transfer deterioration under high-power conditions. In this study, we realized simultaneous electrical and thermal rectification (TR) in a monolayer MoSe2-WSe2 lateral heterostructure. The atomically thin MoSe2-WSe2 heterojunction forms an electrical diode with a high ON/OFF ratio up to 104. Meanwhile, a preferred heat dissipation channel was formed from MoSe2 to WSe2 in the ON state of the heterojunction diode at high bias voltage with a TR factor as high as 96%. Higher thermal conductivity was achieved at higher temperatures owing to the TR effect caused by the local temperature gradient. Furthermore, the TR factor could be regulated from maximum to zero by rotating the angle of the monolayer heterojunction interface. This result opens a path for designing novel nanoelectronic devices with enhanced thermal dissipation.
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Affiliation(s)
- Yufeng Zhang
- Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
| | - Qian Lv
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Haidong Wang
- Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
| | - Shuaiyi Zhao
- Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
| | - Qihua Xiong
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China.,Frontier Science Center for Quantum Information, Beijing 100084, China.,Collaborative Innovation Center of Quantum Matter, Beijing 100084, China.,Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Ruitao Lv
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.,Key Laboratory of Advanced Materials (Ministry of Education), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Xing Zhang
- Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
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39
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An image interaction approach to quantum-phase engineering of two-dimensional materials. Nat Commun 2022; 13:5175. [PMID: 36056011 PMCID: PMC9440131 DOI: 10.1038/s41467-022-32508-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2022] [Accepted: 08/02/2022] [Indexed: 11/09/2022] Open
Abstract
Tuning electrical, optical, and thermal material properties is central for engineering and understanding solid-state systems. In this scenario, atomically thin materials are appealing because of their sensitivity to electric and magnetic gating, as well as to interlayer hybridization. Here, we introduce a radically different approach to material engineering relying on the image interaction experienced by electrons in a two-dimensional material when placed in proximity of an electrically neutral structure. We theoretically show that electrons in a semiconductor atomic layer acquire a quantum phase resulting from the image potential induced by the presence of a neighboring periodic array of conducting ribbons, which in turn modifies the optical, electrical, and thermal properties of the monolayer, giving rise to additional interband optical absorption, plasmon hybridization, and metal-insulator transitions. Beyond its fundamental interest, material engineering based on the image interaction represents a disruptive approach to tailor the properties of atomic layers for application in nanodevices.
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40
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Bharadwaj S, Ramasubramaniam A, Ram-Mohan LR. Lateral transition-metal dichalcogenide heterostructures for high efficiency thermoelectric devices. NANOSCALE 2022; 14:11750-11759. [PMID: 35920209 DOI: 10.1039/d2nr01609e] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Monolayer transition-metal dichalcogenides (TMDC) have emerged as promising candidates for thermoelectric applications due to their large effective mass and low thermal conductivity. In this article, we study the thermoelectric performance of lateral TMDC heterostructures within a multiscale quantum transport framework. Both n-type and p-type lateral heterostructures are considered for all possible combinations of semiconducting TMDCs: MoS2, MoSe2, WS2, and WSe2. The band alignment between these materials is found to play a crucial role in enhancing the thermoelectric figure-of-merit (ZT) and power factor far beyond those of pristine TMDCs. In particular, we show that the room-temperature ZT value of n-type WS2 with WSe2 triangular inclusions is five times larger than that of the pristine WS2 monolayer. We also show that p-type MoSe2 with WSe2 inclusions has a room-temperature ZT value which is two times larger than that of the pristine MoSe2 monolayer. The peak power factor values, calculated here, are the highest reported amongst gapped monolayers at room temperature. Hence, monolayer lateral TMDC heterostructures open new avenues to develop ultra-efficient, planar thermoelectric devices.
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Affiliation(s)
- Sathwik Bharadwaj
- Department of Physics, Worcester Polytechnic Institute, Worcester, Massachusetts 01609, USA.
- Center for Computational NanoScience, Worcester Polytechnic Institute, Worcester, Massachusetts 01609, USA.
| | - Ashwin Ramasubramaniam
- Department of Mechanical and Industrial Engineering, University of Massachusetts, Amherst, Massachusetts 01003, USA
| | - L R Ram-Mohan
- Department of Physics, Worcester Polytechnic Institute, Worcester, Massachusetts 01609, USA.
- Center for Computational NanoScience, Worcester Polytechnic Institute, Worcester, Massachusetts 01609, USA.
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41
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Recent Progress in Fabrication and Physical Properties of 2D TMDC-Based Multilayered Vertical Heterostructures. ELECTRONICS 2022. [DOI: 10.3390/electronics11152401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Abstract
Two-dimensional (2D) vertical heterojunctions (HSs), which are usually fabricated by vertically stacking two layers of transition metal dichalcogenide (TMDC), have been intensively researched during the past years. However, it is still an enormous challenge to achieve controllable preparation of the TMDC trilayer or multilayered van der Waals (vdWs) HSs, which have important effects on physical properties and device performance. In this review, we will introduce fundamental features and various fabrication methods of diverse TMDC-based multilayered vdWs HSs. This review focuses on four fabrication methods of TMDC-based multilayered vdWs HSs, such as exfoliation, chemical vapor deposition (CVD), metal-organic chemical vapor deposition (MOCVD), and pulsed laser deposition (PLD). The latest progress in vdWs HS-related novel physical phenomena are summarized, including interlayer excitons, long photocarrier lifetimes, upconversion photoluminescence, and improved photoelectrochemical catalysis. At last, current challenges and prospects in this research field are provided.
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42
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Kollipara PS, Mahendra R, Li J, Zheng Y. Bubble-pen lithography: Fundamentals and applications: Nanoscience: Special Issue Dedicated to Professor Paul S. Weiss. AGGREGATE (HOBOKEN, N.J.) 2022; 3:e189. [PMID: 37441005 PMCID: PMC10338034 DOI: 10.1002/agt2.189] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 07/15/2023]
Abstract
Developing on-chip functional devices requires reliable fabrication methods with high resolution for miniaturization, desired components for enhanced performance, and high throughput for fast prototyping and mass production. Recently, laser-based bubble-pen lithography (BPL) has been developed to enable sub-micron linewidths, in situ synthesis of custom materials, and on-demand patterning for various functional components and devices. BPL exploits Marangoni convection induced by a laser-controlled microbubble to attract, accumulate, and immobilize particles, ions, and molecules onto different substrates. Recent years have witnessed tremendous progress in theory, engineering, and application of BPL, which motivated us to write this review. First, an overview of experimental demonstrations and theoretical understandings of BPL is presented. Next, we discuss the advantages of BPL and its diverse applications in quantum dot displays, biological and chemical sensing, clinical diagnosis, nanoalloy synthesis, and microrobotics. We conclude this review with our perspective on the challenges and future directions of BPL.
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Affiliation(s)
| | - Ritvik Mahendra
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas, USA
| | - Jingang Li
- Material Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas, USA
| | - Yuebing Zheng
- Walker Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas, USA
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas, USA
- Material Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas, USA
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43
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Manzo S, Strohbeen PJ, Lim ZH, Saraswat V, Du D, Xu S, Pokharel N, Mawst LJ, Arnold MS, Kawasaki JK. Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces. Nat Commun 2022; 13:4014. [PMID: 35851271 PMCID: PMC9293962 DOI: 10.1038/s41467-022-31610-y] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/05/2021] [Accepted: 06/17/2022] [Indexed: 11/25/2022] Open
Abstract
Remote epitaxy is a promising approach for synthesizing exfoliatable crystalline membranes and enabling epitaxy of materials with large lattice mismatch. However, the atomic scale mechanisms for remote epitaxy remain unclear. Here we experimentally demonstrate that GaSb films grow on graphene-terminated GaSb (001) via a seeded lateral epitaxy mechanism, in which pinhole defects in the graphene serve as selective nucleation sites, followed by lateral epitaxy and coalescence into a continuous film. Remote interactions are not necessary in order to explain the growth. Importantly, the small size of the pinholes permits exfoliation of continuous, free-standing GaSb membranes. Due to the chemical similarity between GaSb and other III-V materials, we anticipate this mechanism to apply more generally to other materials. By combining molecular beam epitaxy with in-situ electron diffraction and photoemission, plus ex-situ atomic force microscopy and Raman spectroscopy, we track the graphene defect generation and GaSb growth evolution a few monolayers at a time. Our results show that the controlled introduction of nanoscale openings in graphene provides an alternative route towards tuning the growth and properties of 3D epitaxial films and membranes on 2D material masks. Remote epitaxy represents a promising method for the synthesis of thin films on lattice-mismatched substrates, but its atomic-scale mechanisms are still unclear. Here, the authors demonstrate the growth of exfoliatable GaSb films on graphene-terminated GaSb (001) via seeded lateral epitaxy, showing that pinhole defects in graphene serve as selective nucleation sites.
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Affiliation(s)
- Sebastian Manzo
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Patrick J Strohbeen
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Zheng Hui Lim
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Vivek Saraswat
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Dongxue Du
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Shining Xu
- Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Nikhil Pokharel
- Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Luke J Mawst
- Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Michael S Arnold
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Jason K Kawasaki
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA.
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Li J, Liang J, Yang X, Li X, Zhao B, Li B, Duan X. Controllable Preparation of 2D Vertical van der Waals Heterostructures and Superlattices for Functional Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107059. [PMID: 35297544 DOI: 10.1002/smll.202107059] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Revised: 01/27/2022] [Indexed: 06/14/2023]
Abstract
2D van der Waals heterostructures (vdWHs) and superlattices (SLs) with exotic physical properties and applications for new devices have attracted immense interest. Compared to conventionally bonded heterostructures, the dangling-bond-free surface of 2D layered materials allows for the feasible integration of various materials to produce vdWHs without the requirements of lattice matching and processing compatibility. The quality of interfaces in artificially stacked vdWHs/vdWSLs and scalability of production remain among the major challenges in the field of 2D materials. Fortunately, bottom-up methods exhibit relatively high controllability and flexibility. The growth parameters, such as the temperature, precursors, substrate, and carrier gas, can be carefully and comprehensively controlled to produce high-quality interfaces and wafer-scale products of vdWHs/vdWSLs. This review focuses on three types of bottom-up methods for the assembly of vdWHs and vdWSLs with atomically clean and electronically sharp interfaces: chemical/physical vapor deposition, metal-organic chemical vapor deposition, and ultrahigh vacuum growth. These methods can intuitively illustrate the great flexibility and controllability of bottom-up methods for the preparation of vdWHs/vdWSLs. The latest progress in vdWHs and vdWSLs, related physical phenomena, and (opto)electronic devices are summarized. Finally, the authors discuss current challenges and future perspectives in the synthesis and application of vdWHs and vdWSLs.
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Affiliation(s)
- Jia Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Jingyi Liang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Xiangdong Yang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Xin Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Bei Zhao
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Bo Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
- School of Physics and Electronics, Hunan University, Changsha, P. R. China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
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45
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Abstract
The discovery of chiral-induced spin selectivity (CISS) opens up the possibility to manipulate spin orientation without external magnetic fields and enables new spintronic device designs1-4. Although many approaches have been explored for introducing CISS into solid-state materials and devices, the resulting systems so far are often plagued by high inhomogeneity, low spin selectivity or limited stability, and have difficulties in forming robust spintronic devices5-8. Here we report a new class of chiral molecular intercalation superlattices (CMIS) as a robust solid-state chiral material platform for exploring CISS. The CMIS were prepared by intercalating layered two-dimensional atomic crystals (2DACs) (such as TaS2 and TiS2) with selected chiral molecules (such as R-α-methylbenzylamine and S-α-methylbenzylamine). The X-ray diffraction and transmission electron microscopy studies demonstrate highly ordered superlattice structures with alternating crystalline atomic layers and self-assembled chiral molecular layers. Circular dichroism studies show clear chirality-dependent signals between right-handed (R-) and left-handed (S-) CMIS. Furthermore, by using the resulting CMIS as the spin-filtering layer, we create spin-selective tunnelling junctions with a distinct chirality-dependent tunnelling current, achieving a tunnelling magnetoresistance ratio of more than 300 per cent and a spin polarization ratio of more than 60 per cent. With a large family of 2DACs of widely tunable electronic properties and a vast selection of chiral molecules of designable structural motifs, the CMIS define a rich family of artificial chiral materials for investigating the CISS effect and capturing its potential for new spintronic devices.
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46
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Xia J, Gu H, Liang C, Cai Y, Xing G. Manipulation of Band Alignment in Two-Dimensional Vertical WSe 2/BA 2PbI 4 Ruddlesden-Popper Perovskite Heterojunctions via Defect Engineering. J Phys Chem Lett 2022; 13:4579-4588. [PMID: 35583485 DOI: 10.1021/acs.jpclett.2c00856] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Transition metal dichalcogenides (TMDs), two-dimensional (2D) layered Ruddlesden-Popper perovskite material, and their heterojunctions have attracted a great deal of interest in optoelectronic applications. Although various approaches for modulating their properties and applications have been demonstrated, knowledge of the interface band alignment and defect engineering on the TMD/2D perovskite heterojunction is still lacking. Herein, the optoelectronic properties and defect engineering of the WSe2/BA2PbI4 heterojunction have been investigated with density functional theory simulations. We find that the WSe2/BA2PbI4 van der Waals heterojunction maintains an indirect bandgap and S-scheme alignment, facilitating the efficient splitting of light excited carriers across the interface. Importantly, we find that defect engineering could manipulate the band alignment. The introduction of the BA vacancies could switch the interface from the S-scheme to the typical type II interface, whereas Se vacancies would facilitate recombination at the S-scheme interface. Our work proves that the interfacial properties of heterojunctions can be regulated by defect modulation to address different optoelectronic applications.
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Affiliation(s)
- Junmin Xia
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau 999078, P. R. China
| | - Hao Gu
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau 999078, P. R. China
| | - Chao Liang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau 999078, P. R. China
| | - Yongqing Cai
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau 999078, P. R. China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau 999078, P. R. China
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47
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Zhao L, Liang Y, Cai X, Du J, Wang X, Liu X, Wang M, Wei Z, Zhang J, Zhang Q. Engineering Near-Infrared Light Emission in Mechanically Exfoliated InSe Platelets through Hydrostatic Pressure for Multicolor Microlasing. NANO LETTERS 2022; 22:3840-3847. [PMID: 35500126 DOI: 10.1021/acs.nanolett.2c01127] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
γ-indium selenide (InSe) is a van der Waals semiconductor and holds great potentials for low-energy-consumption electronic and optoelectronic devices. Herein, we investigated the hydrostatic pressure engineered near-infrared (NIR) light emission of mechanically exfoliated γ-InSe crystals using the diamond anvil cell (DAC) technique. A record-wide spectral tuning range of 185 nm and a large linear pressure coefficient of 40 nm GPa-1 were achieved for spontaneous emissions, leading to ultrabroadband microlasing spectrally ranging from 1022 to 911 nm. This high emission tunability can be attributed to the compression of the soft intralayer In-Se bonds under high pressure, which suppressed the band gap shrinkage by increasing the interlayer interaction. Furthermore, two band gap crossovers of valence (direct-to-indirect) and conduction bands were resolved at approximately 4.0 and 7.0 GPa, respectively, resulting in pressure-sensitive emission lifetime and intensity. These findings pave the pathways for pressure-sensitive InSe-based NIR light sources, sensors and so on.
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Affiliation(s)
- Liyun Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Yin Liang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xinghong Cai
- Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energies, School of Materials and Energy, Southwest University, Chongqing 400715, China
| | - Jiaxing Du
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xiaoting Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Min Wang
- Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energies, School of Materials and Energy, Southwest University, Chongqing 400715, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
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48
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Chou HC, Zhang XQ, Shiau SY, Chien CH, Tang PW, Sung CT, Chang YC, Lee YH, Chen C. Near-field spectroscopic imaging of exciton quenching at atomically sharp MoS 2/WS 2 lateral heterojunctions. NANOSCALE 2022; 14:6323-6330. [PMID: 35297443 DOI: 10.1039/d2nr00216g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Heterojunctions made by laterally stitching two different transition metal dichalcogenide monolayers create a unique one-dimensional boundary with intriguing local optical properties that can only be characterized by nanoscale-spatial-resolution spectral tools. Here, we use near-field photoluminescence (NF-PL) to reveal the narrowest region (105 nm) ever reported of photoluminescence quenching at the junction of a laterally stitched WS2/MoS2 monolayer. We attribute this quenching to the atomically sharp band offset that generates a strong electric force at the junction to easily dissociate excitons. Besides the sharp heterojunction, a model considering various widths of the alloying interfacial region under low or high optical pumping is presented. With a spatial resolution six times better than that of confocal microscopy, NF-PL provides an unprecedented spectral tool for non-scalable 1D lateral heterojunctions.
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Affiliation(s)
- He-Chun Chou
- Research Center for Applied Sciences, Academia Sinica, Taipei, 115, Taiwan.
| | - Xin-Quan Zhang
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 300, Taiwan.
| | - Shiue-Yuan Shiau
- Physics Division, National Center for Theoretical Sciences, Taipei, 106, Taiwan
| | - Ching-Hang Chien
- Research Center for Applied Sciences, Academia Sinica, Taipei, 115, Taiwan.
| | - Po-Wen Tang
- Research Center for Applied Sciences, Academia Sinica, Taipei, 115, Taiwan.
| | - Chun-Te Sung
- Research Center for Applied Sciences, Academia Sinica, Taipei, 115, Taiwan.
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 300, Taiwan.
| | - Yia-Chung Chang
- Research Center for Applied Sciences, Academia Sinica, Taipei, 115, Taiwan.
| | - Yi-Hsien Lee
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 300, Taiwan.
| | - Chi Chen
- Research Center for Applied Sciences, Academia Sinica, Taipei, 115, Taiwan.
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49
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Zhang Z, Huang Z, Li J, Wang D, Lin Y, Yang X, Liu H, Liu S, Wang Y, Li B, Duan X, Duan X. Endoepitaxial growth of monolayer mosaic heterostructures. NATURE NANOTECHNOLOGY 2022; 17:493-499. [PMID: 35437319 DOI: 10.1038/s41565-022-01106-3] [Citation(s) in RCA: 29] [Impact Index Per Article: 14.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2020] [Accepted: 03/01/2022] [Indexed: 06/14/2023]
Abstract
The controllable growth of two-dimensional (2D) heterostructure arrays is critical for exploring exotic physics and developing novel devices, yet it remains a substantial synthetic challenge. Here we report a rational synthetic strategy to fabricate mosaic heterostructure arrays in monolayer 2D atomic crystals. By using a laser-patterning and an anisotropic thermal etching process, we create periodic triangular hole arrays in 2D crystals with precisely controlled size and atomically clean edges, which function as robust templates for endoepitaxial growth of another 2D crystal, to obtain monolayer mosaic heterostructures with atomically sharp heterojunction interfaces. Systematic microstructure and spectroscopic characterizations reveal periodic modulation of chemical compositions, lattice strains and electronic band gaps throughout the mosaic heterostructures. The robust growth of the monolayer mosaic heterostructures with a high level of synthetic control opens a pathway for band structure engineering and spatially modulating the potential landscapes in the atomically thin 2D crystals, establishing a designable material platform for fundamental studies and development of complex devices and integrated circuits from 2D heterostructures.
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Affiliation(s)
- Zhengwei Zhang
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, China
| | - Ziwei Huang
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Jia Li
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Di Wang
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Yue Lin
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China
| | - Xiangdong Yang
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Hang Liu
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Song Liu
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Yiliu Wang
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha, China
| | - Bo Li
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, CA, USA
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China.
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50
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Tenorio M, Moreno C, Febrer P, Castro-Esteban J, Ordejón P, Peña D, Pruneda M, Mugarza A. Atomically Sharp Lateral Superlattice Heterojunctions Built-In Nitrogen-Doped Nanoporous Graphene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2110099. [PMID: 35334133 DOI: 10.1002/adma.202110099] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2021] [Revised: 03/18/2022] [Indexed: 06/14/2023]
Abstract
Nanometer scale lateral heterostructures with atomically sharp band discontinuities can be conceived as the 2D analogues of vertical Van der Waals heterostructures, where pristine properties of each component coexist with interfacial phenomena that result in a variety of exotic quantum phenomena. However, despite considerable advances in the fabrication of lateral heterostructures, controlling their covalent interfaces and band discontinuities with atomic precision, scaling down components and producing periodic, lattice-coherent superlattices still represent major challenges. Here, a synthetic strategy to fabricate nanometer scale, coherent lateral superlattice heterojunctions with atomically sharp band discontinuity is reported. By merging interdigitated arrays of different types of graphene nanoribbons by means of a novel on-surface reaction, superlattices of 1D, and chemically heterogeneous nanoporous junctions are obtained. The latter host subnanometer quantum dipoles and tunneling in-gap states, altogether expected to promote interfacial phenomena such as interribbon excitons or selective photocatalysis.
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Affiliation(s)
- Maria Tenorio
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, Barcelona, 08193, Spain
| | - Cesar Moreno
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, Barcelona, 08193, Spain
- Departamento de Ciencias de la Tierra y Fisica de la Materia Condensada, Universidad de Cantabria, Santander, 39005, Spain
| | - Pol Febrer
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, Barcelona, 08193, Spain
| | - Jesús Castro-Esteban
- Centro de Investigación en Química Biolóxica e Materiais Moleculares (CiQUS), Departamento de Química Orgánica, Universidade de Santiago de Compostela, Santiago de Compostela, 15782, Spain
| | - Pablo Ordejón
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, Barcelona, 08193, Spain
| | - Diego Peña
- Centro de Investigación en Química Biolóxica e Materiais Moleculares (CiQUS), Departamento de Química Orgánica, Universidade de Santiago de Compostela, Santiago de Compostela, 15782, Spain
| | - Miguel Pruneda
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, Barcelona, 08193, Spain
| | - Aitor Mugarza
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, Barcelona, 08193, Spain
- ICREA Institució Catalana de Recerca i Estudis Avançats, Lluis Companys 23, Barcelona, 08010, Spain
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