1
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Wang F, Shi G, Yang D, Tan HR, Zhang C, Lei J, Pu Y, Yang S, Soumyanarayanan A, Elyasi M, Yang H. Deterministic switching of perpendicular magnetization by out-of-plane anti-damping magnon torques. NATURE NANOTECHNOLOGY 2024:10.1038/s41565-024-01741-y. [PMID: 39048707 DOI: 10.1038/s41565-024-01741-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2023] [Accepted: 06/12/2024] [Indexed: 07/27/2024]
Abstract
Spin-wave excitations of magnetic moments (or magnons) can transport spin angular momentum in insulating magnetic materials. This property distinguishes magnonic devices from traditional electronics, where power consumption results from electrons' movement. Recently, magnon torques have been used to switch perpendicular magnetization in the presence of an external magnetic field. Here we present a material system composed of WTe2/antiferromagnetic insulator NiO/ferromagnet CoFeB heterostructures that allows magnetic field-free switching of the perpendicular magnetization. The magnon currents, with a spin polarization canting of -8.5° relative to the sample plane, traverse the 25-nm-thick polycrystalline NiO layer while preserving their original polarization direction, subsequently exerting an out-of-plane anti-damping magnon torque on the ferromagnetic layer. Using this mechanism, we achieve a 190-fold reduction in power consumption in PtTe2/WTe2/NiO/CoFeB heterostructures compared to Bi2Te3/NiO/CoFeB control samples, which only exhibit in-plane magnon torques. Our field-free demonstration contributes to the realization of all-electric, low-power, perpendicular magnetization switching devices.
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Affiliation(s)
- Fei Wang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education and School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan, China
| | - Guoyi Shi
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Dongsheng Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Hui Ru Tan
- Institute of Materials Research and Engineering, Agency for Science, Technology & Research (A*STAR), Singapore, Singapore
| | - Chenhui Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Jiayu Lei
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Yuchen Pu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Shuhan Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Anjan Soumyanarayanan
- Institute of Materials Research and Engineering, Agency for Science, Technology & Research (A*STAR), Singapore, Singapore
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Mehrdad Elyasi
- Advanced Institute for Materials Research, Tohoku University, Sendai, Japan.
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
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2
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Chai Y, Liang Y, Xiao C, Wang Y, Li B, Jiang D, Pal P, Tang Y, Chen H, Zhang Y, Bai H, Xu T, Jiang W, Skowroński W, Zhang Q, Gu L, Ma J, Yu P, Tang J, Lin YH, Yi D, Ralph DC, Eom CB, Wu H, Nan T. Voltage control of multiferroic magnon torque for reconfigurable logic-in-memory. Nat Commun 2024; 15:5975. [PMID: 39013854 PMCID: PMC11252438 DOI: 10.1038/s41467-024-50372-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/07/2024] [Accepted: 07/09/2024] [Indexed: 07/18/2024] Open
Abstract
Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we show the electric excitation and control of multiferroic magnon modes in a spin-source/multiferroic/ferromagnet structure. We demonstrate that the ferroelectric polarization can electrically modulate the magnon-mediated spin-orbit torque by controlling the non-collinear antiferromagnetic structure in multiferroic bismuth ferrite thin films with coupled antiferromagnetic and ferroelectric orders. In this multiferroic magnon torque device, magnon information is encoded to ferromagnetic bits by the magnon-mediated spin torque. By manipulating the two coupled non-volatile state variables-ferroelectric polarization and magnetization-we further present reconfigurable logic operations in a single device. Our findings highlight the potential of multiferroics for controlling magnon information transport and offer a pathway towards room-temperature voltage-controlled, low-power, scalable magnonics for in-memory computing.
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Affiliation(s)
- Yahong Chai
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Yuhan Liang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
- School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Cancheng Xiao
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Yue Wang
- School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Bo Li
- Institute for Advanced Study, Tsinghua University, Beijing, China
| | - Dingsong Jiang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Pratap Pal
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, USA
| | - Yongjian Tang
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA
| | - Hetian Chen
- School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Yuejie Zhang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Hao Bai
- Department of Physics, Tsinghua University, Beijing, China
| | - Teng Xu
- Department of Physics, Tsinghua University, Beijing, China
| | - Wanjun Jiang
- Department of Physics, Tsinghua University, Beijing, China
| | - Witold Skowroński
- Institute of Electronics, AGH University of Science and Technology, Kraków, Poland
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Lin Gu
- School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Jing Ma
- School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Pu Yu
- Department of Physics, Tsinghua University, Beijing, China
| | - Jianshi Tang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Yuan-Hua Lin
- School of Materials Science and Engineering, Tsinghua University, Beijing, China.
| | - Di Yi
- School of Materials Science and Engineering, Tsinghua University, Beijing, China.
| | - Daniel C Ralph
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA
| | - Chang-Beom Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, USA
| | - Huaqiang Wu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Tianxiang Nan
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China.
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3
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Huang X, Chen X, Li Y, Mangeri J, Zhang H, Ramesh M, Taghinejad H, Meisenheimer P, Caretta L, Susarla S, Jain R, Klewe C, Wang T, Chen R, Hsu CH, Harris I, Husain S, Pan H, Yin J, Shafer P, Qiu Z, Rodrigues DR, Heinonen O, Vasudevan D, Íñiguez J, Schlom DG, Salahuddin S, Martin LW, Analytis JG, Ralph DC, Cheng R, Yao Z, Ramesh R. Manipulating chiral spin transport with ferroelectric polarization. NATURE MATERIALS 2024; 23:898-904. [PMID: 38622325 DOI: 10.1038/s41563-024-01854-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2023] [Accepted: 03/07/2024] [Indexed: 04/17/2024]
Abstract
A magnon is a collective excitation of the spin structure in a magnetic insulator and can transmit spin angular momentum with negligible dissipation. This quantum of a spin wave has always been manipulated through magnetic dipoles (that is, by breaking time-reversal symmetry). Here we report the experimental observation of chiral spin transport in multiferroic BiFeO3 and its control by reversing the ferroelectric polarization (that is, by breaking spatial inversion symmetry). The ferroelectrically controlled magnons show up to 18% modulation at room temperature. The spin torque that the magnons in BiFeO3 carry can be used to efficiently switch the magnetization of adjacent magnets, with a spin-torque efficiency comparable to the spin Hall effect in heavy metals. Utilizing such controllable magnon generation and transmission in BiFeO3, an all-oxide, energy-scalable logic is demonstrated composed of spin-orbit injection, detection and magnetoelectric control. Our observations open a new chapter of multiferroic magnons and pave another path towards low-dissipation nanoelectronics.
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Affiliation(s)
- Xiaoxi Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Xianzhe Chen
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| | - Yuhang Li
- Department of Electrical and Computer Engineering, University of California, Riverside, CA, USA
| | - John Mangeri
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, Esch/Alzette, Luxembourg
| | - Hongrui Zhang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Maya Ramesh
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
| | | | - Peter Meisenheimer
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Lucas Caretta
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Sandhya Susarla
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, USA
| | - Rakshit Jain
- Department of Physics, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA
| | - Christoph Klewe
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Tianye Wang
- Department of Physics, University of California, Berkeley, CA, USA
| | - Rui Chen
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Cheng-Hsiang Hsu
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Isaac Harris
- Department of Physics, University of California, Berkeley, CA, USA
| | - Sajid Husain
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Hao Pan
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Jia Yin
- Applied Mathematics and Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Padraic Shafer
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Ziqiang Qiu
- Department of Physics, University of California, Berkeley, CA, USA
| | - Davi R Rodrigues
- Department of Electrical Engineering, Politecnico di Bari, Bari, Italy
| | - Olle Heinonen
- Materials Science Division, Argonne National Laboratory, Lemont, IL, USA
| | - Dilip Vasudevan
- Applied Mathematics and Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, Esch/Alzette, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, Belvaux, Luxembourg
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
| | - Sayeef Salahuddin
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - James G Analytis
- Department of Physics, University of California, Berkeley, CA, USA
- CIFAR Quantum Materials, CIFAR, Toronto, Ontario, Canada
| | - Daniel C Ralph
- Department of Physics, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA
| | - Ran Cheng
- Department of Electrical and Computer Engineering, University of California, Riverside, CA, USA
- Department of Physics and Astronomy, University of California, Riverside, CA, USA
| | - Zhi Yao
- Applied Mathematics and Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
- Department of Physics, University of California, Berkeley, CA, USA.
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4
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Mucchietto A, Baumgaertl K, Grundler D. Magnon-Assisted Magnetization Reversal of Ni 81Fe 19 Nanostripes on Y 3Fe 5O 12 with Different Interfaces. ACS NANO 2024; 18:8641-8648. [PMID: 38488387 DOI: 10.1021/acsnano.3c06353] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/27/2024]
Abstract
Magnetic bit writing by short-wave magnons without conversion to the electrical domain is expected to be a game-changer for in-memory computing architectures. Recently, the reversal of nanomagnets by propagating magnons was demonstrated. However, experiments have not yet explored different wavelengths and the nonlinear excitation regime of magnons required for computational tasks. We report on the magnetization reversal of individual 20 nm thick Ni81Fe19 (Py) nanostripes integrated onto 113 nm thick yttrium iron garnet (YIG). We suppress direct interlayer exchange coupling by an intermediate layer, such as Cu and SiO2. By exciting magnons in YIG with wavelengths λ down to 148 nm we observe the reversal of the integrated ferromagnets in a small external field of 14 mT. Magnons with a small wavelength of λ = 195 nm, i.e., twice the width of the Py nanostripes, induced the reversal at a spin-precessional power of only about 1 nW after propagating over 15 μm in YIG. Such small power value has not been reported so far. Considerations based on dynamic dipolar coupling explain the observed wavelength dependence of the magnon-induced reversal efficiency. For an increased power, the stripes reversed in an external field of only about 1 mT. Our findings are important for the practical implementation of nonvolatile storage of broadband magnon signals in YIG by means of bistable nanomagnets without the need of an appreciable global magnetic field.
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Affiliation(s)
- Andrea Mucchietto
- Laboratory of Nanoscale Magnetic Materials and Magnonics, Institute of Materials (IMX), École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
| | - Korbinian Baumgaertl
- Laboratory of Nanoscale Magnetic Materials and Magnonics, Institute of Materials (IMX), École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
| | - Dirk Grundler
- Laboratory of Nanoscale Magnetic Materials and Magnonics, Institute of Materials (IMX), École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
- Institute of Electrical and Micro Engineering (IEM), 'Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
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5
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Li Y, Zhang Z, Liu C, Zheng D, Fang B, Zhang C, Chen A, Ma Y, Wang C, Liu H, Shen K, Manchon A, Xiao JQ, Qiu Z, Hu CM, Zhang X. Reconfigurable spin current transmission and magnon-magnon coupling in hybrid ferrimagnetic insulators. Nat Commun 2024; 15:2234. [PMID: 38472180 DOI: 10.1038/s41467-024-46330-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2023] [Accepted: 02/22/2024] [Indexed: 03/14/2024] Open
Abstract
Coherent spin waves possess immense potential in wave-based information computation, storage, and transmission with high fidelity and ultra-low energy consumption. However, despite their seminal importance for magnonic devices, there is a paucity of both structural prototypes and theoretical frameworks that regulate the spin current transmission and magnon hybridization mediated by coherent spin waves. Here, we demonstrate reconfigurable coherent spin current transmission, as well as magnon-magnon coupling, in a hybrid ferrimagnetic heterostructure comprising epitaxial Gd3Fe5O12 and Y3Fe5O12 insulators. By adjusting the compensated moment in Gd3Fe5O12, magnon-magnon coupling was achieved and engineered with pronounced anticrossings between two Kittel modes, accompanied by divergent dissipative coupling approaching the magnetic compensation temperature of Gd3Fe5O12 (TM,GdIG), which were modeled by coherent spin pumping. Remarkably, we further identified, both experimentally and theoretically, a drastic variation in the coherent spin wave-mediated spin current across TM,GdIG, which manifested as a strong dependence on the relative alignment of magnetic moments. Our findings provide significant fundamental insight into the reconfiguration of coherent spin waves and offer a new route towards constructing artificial magnonic architectures.
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Affiliation(s)
- Yan Li
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Zhitao Zhang
- Guangdong Provincial Key Laboratory of Semiconductor, Optoelectronic Materials and Intelligent Photonic Systems, School of Science, Harbin Institute of Technology (Shenzhen), 518055, Shenzhen, China
| | - Chen Liu
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Dongxing Zheng
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Bin Fang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Chenhui Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Aitian Chen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Yinchang Ma
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Chunmei Wang
- Guangdong Provincial Key Laboratory of Semiconductor, Optoelectronic Materials and Intelligent Photonic Systems, School of Science, Harbin Institute of Technology (Shenzhen), 518055, Shenzhen, China
| | - Haoliang Liu
- Guangdong Provincial Key Laboratory of Semiconductor, Optoelectronic Materials and Intelligent Photonic Systems, School of Science, Harbin Institute of Technology (Shenzhen), 518055, Shenzhen, China.
| | - Ka Shen
- The Center for Advanced Quantum Studies and Department of Physics, Beijing Normal University, 100875, Beijing, China.
| | | | - John Q Xiao
- Department of Physics and Astronomy, University of Delaware, Newark, Newark, DE, 19716, USA
| | - Ziqiang Qiu
- Department of Physics, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Can-Ming Hu
- Department of Physics and Astronomy, University of Manitoba, Winnipeg, MB, R3T 2N2, Canada
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
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6
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Wang Y, Zhang Y, Li C, Wei J, He B, Xu H, Xia J, Luo X, Li J, Dong J, He W, Yan Z, Yang W, Ma F, Chai G, Yan P, Wan C, Han X, Yu G. Ultrastrong to nearly deep-strong magnon-magnon coupling with a high degree of freedom in synthetic antiferromagnets. Nat Commun 2024; 15:2077. [PMID: 38453947 PMCID: PMC10920873 DOI: 10.1038/s41467-024-46474-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/07/2023] [Accepted: 02/28/2024] [Indexed: 03/09/2024] Open
Abstract
Ultrastrong and deep-strong coupling are two coupling regimes rich in intriguing physical phenomena. Recently, hybrid magnonic systems have emerged as promising candidates for exploring these regimes, owing to their unique advantages in quantum engineering. However, because of the relatively weak coupling between magnons and other quasiparticles, ultrastrong coupling is predominantly realized at cryogenic temperatures, while deep-strong coupling remains to be explored. In our work, we achieve both theoretical and experimental realization of room-temperature ultrastrong magnon-magnon coupling in synthetic antiferromagnets with intrinsic asymmetry of magnetic anisotropy. Unlike most ultrastrong coupling systems, where the counter-rotating coupling strength g2 is strictly equal to the co-rotating coupling strength g1, our systems allow for highly tunable g1 and g2. This high degree of freedom also enables the realization of normalized g1 or g2 larger than 0.5. Particularly, our experimental findings reveal that the maximum observed g1 is nearly identical to the bare frequency, with g1/ω0 = 0.963, indicating a close realization of deep-strong coupling within our hybrid magnonic systems. Our results highlight synthetic antiferromagnets as platforms for exploring unconventional ultrastrong and even deep-strong coupling regimes, facilitating the further exploration of quantum phenomena.
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Affiliation(s)
- Yuqiang Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yu Zhang
- Jiangsu Key Laboratory of Opto-Electronic Technology, School of Physics and Technology, Nanjing Normal University, Nanjing, 210046, China
| | - Chaozhong Li
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China
| | - Jinwu Wei
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China
| | - Bin He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hongjun Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Jihao Xia
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xuming Luo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiahui Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jing Dong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Wenqing He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhengren Yan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Wenlong Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fusheng Ma
- Jiangsu Key Laboratory of Opto-Electronic Technology, School of Physics and Technology, Nanjing Normal University, Nanjing, 210046, China.
| | - Guozhi Chai
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China
| | - Peng Yan
- School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Caihua Wan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Guoqiang Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
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7
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Feng X, Bai H, Fan X, Guo M, Zhang Z, Chai G, Wang T, Xue D, Song C, Fan X. Incommensurate Spin Density Wave in Antiferromagnetic RuO_{2} Evinced by Abnormal Spin Splitting Torque. PHYSICAL REVIEW LETTERS 2024; 132:086701. [PMID: 38457714 DOI: 10.1103/physrevlett.132.086701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/13/2023] [Revised: 12/17/2023] [Accepted: 01/23/2024] [Indexed: 03/10/2024]
Abstract
Since the discovery of antiferromagnetism, metallic oxide RuO_{2} has exhibited numerous intriguing spintronics properties such as the anomalous Hall effect and anisotropic spin splitting effect. However, the microscopic origin of its antiferromagnetism remains unclear. By investigating the spin splitting torque in RuO_{2}/Py, we found that metallic RuO_{2} exhibits a spatially periodic spin structure which interacts with the spin waves in Py through interfacial exchange coupling. The wavelength of such structure is evaluated within 14-20 nm depending on the temperature, which is evidence of an incommensurate spin density wave state in RuO_{2}. Our work not only provides a dynamics approach to characterize the antiferromagnetic ordering in RuO_{2}, but also offers fundamental insights into the spin current generation due to anisotropic spin splitting effect associated with spin density wave.
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Affiliation(s)
- Xiaoyu Feng
- Key Laboratory of Magnetism and Magnetic Materials (MOE), School of Physics Science and Technology, Lanzhou University, Lanzhou 730000, China
| | - Hua Bai
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Xinxin Fan
- Key Laboratory of Magnetism and Magnetic Materials (MOE), School of Physics Science and Technology, Lanzhou University, Lanzhou 730000, China
| | - Muhan Guo
- Key Laboratory of Magnetism and Magnetic Materials (MOE), School of Physics Science and Technology, Lanzhou University, Lanzhou 730000, China
| | - Zhiqiang Zhang
- Key Laboratory of Magnetism and Magnetic Materials (MOE), School of Physics Science and Technology, Lanzhou University, Lanzhou 730000, China
| | - Guozhi Chai
- Key Laboratory of Magnetism and Magnetic Materials (MOE), School of Physics Science and Technology, Lanzhou University, Lanzhou 730000, China
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Tao Wang
- Key Laboratory of Magnetism and Magnetic Materials (MOE), School of Physics Science and Technology, Lanzhou University, Lanzhou 730000, China
| | - Desheng Xue
- Key Laboratory of Magnetism and Magnetic Materials (MOE), School of Physics Science and Technology, Lanzhou University, Lanzhou 730000, China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Xiaolong Fan
- Key Laboratory of Magnetism and Magnetic Materials (MOE), School of Physics Science and Technology, Lanzhou University, Lanzhou 730000, China
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8
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McLaughlin N, Li S, Brock JA, Zhang S, Lu H, Huang M, Xiao Y, Zhou J, Tserkovnyak Y, Fullerton EE, Wang H, Du CR. Local Control of a Single Nitrogen-Vacancy Center by Nanoscale Engineered Magnetic Domain Wall Motion. ACS NANO 2023; 17:25689-25696. [PMID: 38050827 PMCID: PMC10753891 DOI: 10.1021/acsnano.3c10633] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2023] [Revised: 11/18/2023] [Accepted: 11/28/2023] [Indexed: 12/07/2023]
Abstract
Effective control and readout of qubits form the technical foundation of next-generation, transformative quantum information sciences and technologies. The nitrogen-vacancy (NV) center, an intrinsic three-level spin system, is naturally relevant in this context due to its excellent quantum coherence, high fidelity of operations, and remarkable functionality over a broad range of experimental conditions. It is an active contender for the development and implementation of cutting-edge quantum technologies. Here, we report magnetic domain wall motion driven local control and measurements of the NV spin properties. By engineering the local magnetic field environment of an NV center via nanoscale reconfigurable domain wall motion, we show that NV photoluminescence, spin level energies, and coherence time can be reliably controlled and correlated to the magneto-transport response of a magnetic device. Our results highlight the electrically tunable dipole interaction between NV centers and nanoscale magnetic structures, providing an attractive platform to realize interactive information transfer between spin qubits and nonvolatile magnetic memory in hybrid quantum spintronic systems.
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Affiliation(s)
- Nathan
J. McLaughlin
- Department
of Physics, University of California, San
Diego, La Jolla, California 92093, United States
| | - Senlei Li
- School of
Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Jeffrey A. Brock
- Center
for
Memory and Recording Research, University
of California, San Diego, La Jolla, California 92093-0401, United States
| | - Shu Zhang
- Max Planck
Institute for the Physics of Complex Systems, Dresden 01187, Germany
| | - Hanyi Lu
- Department
of Physics, University of California, San
Diego, La Jolla, California 92093, United States
| | - Mengqi Huang
- School of
Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Yuxuan Xiao
- Center
for
Memory and Recording Research, University
of California, San Diego, La Jolla, California 92093-0401, United States
| | - Jingcheng Zhou
- School of
Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Yaroslav Tserkovnyak
- Department
of Physics and Astronomy, University of
California, Los Angeles, California 90095, United States
| | - Eric E. Fullerton
- Center
for
Memory and Recording Research, University
of California, San Diego, La Jolla, California 92093-0401, United States
| | - Hailong Wang
- School of
Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Chunhui Rita Du
- Department
of Physics, University of California, San
Diego, La Jolla, California 92093, United States
- School of
Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
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9
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Zhao M, Zhao Y, Li Y, Dong G, He Z, Du Y, Jiang Y, Wu S, Wang C, Zhao L, Jiang Z, Liu M, Zhou Z. Manipulations of Spin Waves by Photoelectrons in Ferromagnetic/Non-Ferromagnetic Alloyed Film. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303810. [PMID: 37401913 DOI: 10.1002/adma.202303810] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/24/2023] [Revised: 06/19/2023] [Accepted: 06/27/2023] [Indexed: 07/05/2023]
Abstract
Spin waves are considered to be an alternative carrier with great promise for information sensing. The feasible excitation and low-power manipulation of spin waves still remain a challenge. In this regard, natural light enablings spin-wave tunability in Co60 Al40 -alloyed film is investigated. A reversible shift of the critical angle (from 81° in the dark to 83° under illumination) of the body spin-wave is achieved successfully Meanwhile, an eye-catching shift (817 Oe) of the ferromagnetic resonance (FMR) field is obtained optically, leading to changes in magnetic anisotropy. Based on the modified Puszkarski's surface inhomogeneity model, the control of spin-wave resonance (SWR) by sunlight can be understood by an effective photoelectron-doping-induced change of the surface magnetic anisotropy. Furthermore, the body spin wave is modulated stably with natural light illumination, confirming a non-volatile, reversible switching behavior. This work has both practical and theoretical importance for developing future sunlight-tunable magnonics/spintronics devices.
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Affiliation(s)
- Meng Zhao
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Manufacturing Systems Engineering, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Yifan Zhao
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Manufacturing Systems Engineering, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Yaojin Li
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Manufacturing Systems Engineering, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Guohua Dong
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Manufacturing Systems Engineering, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zhexi He
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Manufacturing Systems Engineering, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Yujing Du
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Manufacturing Systems Engineering, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Yuxuan Jiang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Manufacturing Systems Engineering, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Shaoyuan Wu
- Jiangsu Key Laboratory of Phylogenomics & Comparative Genomics Jiangsu International Joint Center of Genomics, School of Life Sciences, Jiangsu Normal University, Xuzhou, Jiangsu, 221116, China
| | - Chenying Wang
- State Key Laboratory for Manufacturing Systems Engineering, School of Mechanical Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi'an, Jiaotong University, Xi'an, 710049, China
| | - Libo Zhao
- State Key Laboratory for Manufacturing Systems Engineering, School of Mechanical Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi'an, Jiaotong University, Xi'an, 710049, China
| | - Zhuangde Jiang
- State Key Laboratory for Manufacturing Systems Engineering, School of Mechanical Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi'an, Jiaotong University, Xi'an, 710049, China
| | - Ming Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Manufacturing Systems Engineering, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Ziyao Zhou
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Manufacturing Systems Engineering, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
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10
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Fan Y, Gross MJ, Fakhrul T, Finley J, Hou JT, Ngo S, Liu L, Ross CA. Coherent magnon-induced domain-wall motion in a magnetic insulator channel. NATURE NANOTECHNOLOGY 2023; 18:1000-1004. [PMID: 37264089 DOI: 10.1038/s41565-023-01406-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Accepted: 04/23/2023] [Indexed: 06/03/2023]
Abstract
Advancing the development of spin-wave devices requires high-quality low-damping magnetic materials where magnon spin currents can efficiently propagate and effectively interact with local magnetic textures. Here we show that magnetic domain walls can modulate spin-wave transport in perpendicularly magnetized channels of Bi-doped yttrium iron garnet. Conversely, we demonstrate that the magnon spin current can drive domain-wall motion in the Bi-doped yttrium iron garnet channel device by means of magnon spin-transfer torque. The domain wall can be reliably moved over 15-20 µm distances at zero applied magnetic field by a magnon spin current excited by a radio-frequency pulse as short as 1 ns. The required energy for driving the domain-wall motion is orders of magnitude smaller than those reported for metallic systems. These results facilitate low-switching-energy magnonic devices and circuits where magnetic domains can be efficiently reconfigured by magnon spin currents flowing within magnetic channels.
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Affiliation(s)
- Yabin Fan
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Miela J Gross
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Takian Fakhrul
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Joseph Finley
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
- Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Justin T Hou
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
- Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Steven Ngo
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Luqiao Liu
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Caroline A Ross
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
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11
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Wei J, Yu S, Li L, Wang X, Lu C. Tunable Magnetic Domain Patterns in Thickness-Gradient Nickel Films on Flexible PDMS Substrates. ACS OMEGA 2023; 8:31178-31187. [PMID: 37663513 PMCID: PMC10468897 DOI: 10.1021/acsomega.3c03188] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Accepted: 08/08/2023] [Indexed: 09/05/2023]
Abstract
Flexible magnetoelectronic devices (based on magnetic films) have great application prospects in the fields of information storages, bionic robotics, and electronic skins. The intrinsic stress and external loading are very important to modulate the structures and properties of flexible magnetic films due to the magnetoelastic coupling effect. Here, we report on tunable magnetic domain patterns in thickness-gradient nickel (Ni) films deposited on flexible polydimethylsiloxane substrates. It is found that stripe magnetic domains spontaneously form in the Ni films and their sizes increase with the film thickness. The internal stress evolves from tensile to compressive states with decreasing film thickness, leading to the formation of cracks in thicker regions and wrinkles in thinner regions. Meanwhile, the orientations of stripe magnetic domains change from the gradient direction to the orthogonal direction. The structural features, evolution behaviors, and physical mechanisms of the cracks, wrinkles, and magnetic domains are analyzed based on the stress theory and magnetoelastic coupling. Periodic gradient Ni films with large-scale regulations of stripe magnetic domains are also realized by masking of copper grids. This study helps to better understand the magnetoelastic coupling effect in gradient flexible magnetic films and provides a technique to modulate anisotropic magnetic properties by designing specific film systems.
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Affiliation(s)
- Jingjing Wei
- Key
Laboratory of Novel Materials for Sensor of Zhejiang Province, College
of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China
| | - Senjiang Yu
- Key
Laboratory of Novel Materials for Sensor of Zhejiang Province, College
of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China
| | - Lingwei Li
- Key
Laboratory of Novel Materials for Sensor of Zhejiang Province, College
of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China
| | - Xin Wang
- Key
Laboratory of Novel Materials for Sensor of Zhejiang Province, College
of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China
| | - Chenxi Lu
- Key
Laboratory of Novel Materials for Sensor of Zhejiang Province, College
of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China
- State
Key Laboratory of Silicon Materials, Zhejiang
University, Hangzhou 310027, P. R. China
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12
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Li R, Riddiford LJ, Chai Y, Dai M, Zhong H, Li B, Li P, Yi D, Zhang Y, Broadway DA, Dubois AEE, Maletinsky P, Hu J, Suzuki Y, Ralph DC, Nan T. A puzzling insensitivity of magnon spin diffusion to the presence of 180-degree domain walls. Nat Commun 2023; 14:2393. [PMID: 37100786 PMCID: PMC10133301 DOI: 10.1038/s41467-023-38095-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2022] [Accepted: 04/14/2023] [Indexed: 04/28/2023] Open
Abstract
We present room-temperature measurements of magnon spin diffusion in epitaxial ferrimagnetic insulator MgAl0.5Fe1.5O4 (MAFO) thin films near zero applied magnetic field where the sample forms a multi-domain state. Due to a weak uniaxial magnetic anisotropy, the domains are separated primarily by 180° domain walls. We find, surprisingly, that the presence of the domain walls has very little effect on the spin diffusion - nonlocal spin transport signals in the multi-domain state retain at least 95% of the maximum signal strength measured for the spatially-uniform magnetic state, over distances at least five times the typical domain size. This result is in conflict with simple models of interactions between magnons and static domain walls, which predict that the spin polarization carried by the magnons reverses upon passage through a 180° domain wall.
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Affiliation(s)
- Ruofan Li
- Laboratory of Atomic and Solid-State Physics, Cornell University, Ithaca, NY, 14853, USA
| | - Lauren J Riddiford
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA
| | - Yahong Chai
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, 100084, Beijing, China
| | - Minyi Dai
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Hai Zhong
- Qnami AG, CH-4132, Muttenz, Switzerland
| | - Bo Li
- Institute for Advanced Study, Tsinghua University, 100084, Beijing, China
| | - Peng Li
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA
| | - Di Yi
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Yuejie Zhang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, 100084, Beijing, China
| | - David A Broadway
- Department of Physics, University of Basel, CH-4056, Basel, Switzerland
| | - Adrien E E Dubois
- Qnami AG, CH-4132, Muttenz, Switzerland
- Department of Physics, University of Basel, CH-4056, Basel, Switzerland
| | - Patrick Maletinsky
- Qnami AG, CH-4132, Muttenz, Switzerland
- Department of Physics, University of Basel, CH-4056, Basel, Switzerland
| | - Jiamian Hu
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Yuri Suzuki
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
| | - Daniel C Ralph
- Laboratory of Atomic and Solid-State Physics, Cornell University, Ithaca, NY, 14853, USA.
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, 14853, USA.
| | - Tianxiang Nan
- Laboratory of Atomic and Solid-State Physics, Cornell University, Ithaca, NY, 14853, USA.
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, 100084, Beijing, China.
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13
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Baumgaertl K, Grundler D. Reversal of nanomagnets by propagating magnons in ferrimagnetic yttrium iron garnet enabling nonvolatile magnon memory. Nat Commun 2023; 14:1490. [PMID: 36990987 DOI: 10.1038/s41467-023-37078-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/17/2021] [Accepted: 03/01/2023] [Indexed: 03/30/2023] Open
Abstract
AbstractDespite the unprecedented downscaling of CMOS integrated circuits, memory-intensive machine learning and artificial intelligence applications are limited by data conversion between memory and processor. There is a challenging quest for novel approaches to overcome this so-called von Neumann bottleneck. Magnons are the quanta of spin waves. Their angular momentum enables power-efficient computation without charge flow. The conversion problem would be solved if spin wave amplitudes could be stored directly in a magnetic memory. Here, we report the reversal of ferromagnetic nanostripes by spin waves which propagate in an underlying spin-wave bus. Thereby, the charge-free angular momentum flow is stored after transmission over a macroscopic distance. We show that the spin waves can reverse large arrays of ferromagnetic stripes at a strikingly small power level. Combined with the already existing wave logic, our discovery is path-breaking for the new era of magnonics-based in-memory computation and beyond von Neumann computer architectures.
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14
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Hybrid spin Hall nano-oscillators based on ferromagnetic metal/ferrimagnetic insulator heterostructures. Nat Commun 2023; 14:1406. [PMID: 36918562 PMCID: PMC10015054 DOI: 10.1038/s41467-023-37028-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Accepted: 03/01/2023] [Indexed: 03/16/2023] Open
Abstract
Spin-Hall nano-oscillators (SHNOs) are promising spintronic devices to realize current controlled GHz frequency signals in nanoscale devices for neuromorphic computing and creating Ising systems. However, traditional SHNOs devices based on transition metals have high auto-oscillation threshold currents as well as low quality factors and output powers. Here we demonstrate a new type of hybrid SHNO based on a permalloy (Py) ferromagnetic-metal nanowire and low-damping ferrimagnetic insulator, in the form of epitaxial lithium aluminum ferrite (LAFO) thin films. The superior characteristics of such SHNOs are associated with the excitation of larger spin-precession angles and volumes. We further find that the presence of the ferrimagnetic insulator enhances the auto-oscillation amplitude of spin-wave edge modes, consistent with our micromagnetic modeling. This hybrid SHNO expands spintronic applications, including providing new means of coupling multiple SHNOs for neuromorphic computing and advancing magnonics.
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15
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Wang H, Yuan R, Zhou Y, Zhang Y, Chen J, Liu S, Jia H, Yu D, Ansermet JP, Song C, Yu H. Long-Distance Coherent Propagation of High-Velocity Antiferromagnetic Spin Waves. PHYSICAL REVIEW LETTERS 2023; 130:096701. [PMID: 36930935 DOI: 10.1103/physrevlett.130.096701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2022] [Revised: 01/06/2023] [Accepted: 02/10/2023] [Indexed: 06/18/2023]
Abstract
We report on coherent propagation of antiferromagnetic (AFM) spin waves over a long distance (∼10 μm) at room temperature in a canted AFM α-Fe_{2}O_{3} owing to the Dzyaloshinskii-Moriya interaction (DMI). Unprecedented high group velocities (up to 22.5 km/s) are characterized by microwave transmission using all-electrical spin wave spectroscopy. We derive analytically AFM spin-wave dispersion in the presence of the DMI which accounts for our experimental results. The AFM spin waves excited by nanometric coplanar waveguides have large wave vectors in the exchange regime and follow a quasilinear dispersion relation. Fitting of experimental data with our theoretical model yields an AFM exchange stiffness length of 1.7 Å. Our results provide key insights on AFM spin dynamics and demonstrate high-speed functionality for AFM magnonics.
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Affiliation(s)
- Hanchen Wang
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
- International Quantum Academy, Shenzhen 518048, China
- Department of Materials, ETH Zurich, Zurich 8093, Switzerland
| | - Rundong Yuan
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Yongjian Zhou
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Yuelin Zhang
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Jilei Chen
- International Quantum Academy, Shenzhen 518048, China
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Song Liu
- International Quantum Academy, Shenzhen 518048, China
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Hao Jia
- International Quantum Academy, Shenzhen 518048, China
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Dapeng Yu
- International Quantum Academy, Shenzhen 518048, China
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jean-Philippe Ansermet
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Haiming Yu
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
- International Quantum Academy, Shenzhen 518048, China
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16
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Anastaziak B, Andrzejewska W, Schmidt M, Matczak M, Soldatov I, Schäfer R, Lewandowski M, Stobiecki F, Janzen C, Ehresmann A, Kuświk P. Magnetic patterning of Co/Ni layered systems by plasma oxidation. Sci Rep 2022; 12:22060. [PMID: 36543839 PMCID: PMC9772314 DOI: 10.1038/s41598-022-26604-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/13/2022] [Accepted: 12/16/2022] [Indexed: 12/24/2022] Open
Abstract
We studied the structural, chemical, and magnetic properties of Ti/Au/Co/Ni layered systems subjected to plasma oxidation. The process results in the formation of NiO at the expense of metallic Ni, as clearly evidenced by X-ray photoelectron spectroscopy, while not affecting the surface roughness and grain size of the Co/Ni bilayers. Since the decrease of the thickness of the Ni layer and the formation of NiO increase the perpendicular magnetic anisotropy, oxidation may be locally applied for magnetic patterning. Using this approach, we created 2D heterostructures characterized by different combinations of magnetic properties in areas modified by plasma oxidation and in the regions protected from oxidation. As plasma oxidation is an easy to use, low cost, and commonly utilized technique in industrial applications, it may constitute an improvement over other magnetic patterning methods.
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Affiliation(s)
- Błażej Anastaziak
- grid.413454.30000 0001 1958 0162Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, Poznań, Poland ,grid.5633.30000 0001 2097 3545NanoBioMedical Centre, Adam Mickiewicz University, Wszechnicy Piastowskiej 3, Poznań, Poland
| | - Weronika Andrzejewska
- grid.5633.30000 0001 2097 3545NanoBioMedical Centre, Adam Mickiewicz University, Wszechnicy Piastowskiej 3, Poznań, Poland
| | - Marek Schmidt
- grid.413454.30000 0001 1958 0162Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, Poznań, Poland
| | - Michał Matczak
- grid.25588.320000 0004 0620 6106Faculty of Physics, University of Białystok, Białystok, Poland
| | - Ivan Soldatov
- grid.14841.380000 0000 9972 3583Leibniz Institute for Solid State and Materials Research (IFW), Helmholtzstraße 20, Dresden, Germany
| | - Rudolf Schäfer
- grid.14841.380000 0000 9972 3583Leibniz Institute for Solid State and Materials Research (IFW), Helmholtzstraße 20, Dresden, Germany
| | - Mikołaj Lewandowski
- grid.5633.30000 0001 2097 3545NanoBioMedical Centre, Adam Mickiewicz University, Wszechnicy Piastowskiej 3, Poznań, Poland
| | - Feliks Stobiecki
- grid.413454.30000 0001 1958 0162Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, Poznań, Poland
| | - Christian Janzen
- grid.5155.40000 0001 1089 1036Institute of Physics and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Kassel, Germany
| | - Arno Ehresmann
- grid.5155.40000 0001 1089 1036Institute of Physics and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Kassel, Germany
| | - Piotr Kuświk
- grid.413454.30000 0001 1958 0162Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, Poznań, Poland
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17
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Choi T, Zhang Z, Kim H, Park S, Kim JW, Lee KJ, Islam Z, Welp U, Chang SH, Kim BJ. Nanoscale Antiferromagnetic Domain Imaging using Full-Field Resonant X-ray Magnetic Diffraction Microscopy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200639. [PMID: 35580279 DOI: 10.1002/adma.202200639] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Revised: 05/12/2022] [Indexed: 06/15/2023]
Abstract
The physical properties of magnetic materials frequently depend not only on the microscopic spin and electronic structures, but also on the structures of mesoscopic length scales that emerge, for instance, from domain formations, or chemical and/or electronic phase separations. However, experimental access to such mesoscopic structures is currently limited, especially for antiferromagnets with net zero magnetization. Here, full-field microscopy and resonant magnetic X-ray diffraction are combined to visualize antiferromagnetic (AF) domains of the spin-orbit Mott insulator Sr2 IrO4 with area over ≈0.1 mm2 and with spatial resolution as high as ≈150 nm. With the unprecedented wide field of views and high spatial resolution, an intertwining of two AF domains on a length comparable to the measured average AF domain wall width of 545 nm is revealed. This mesoscopic structure comprises a substantial portion of the sample surface, and thus can result in a macroscopic response unexpected from its microscopic magnetic structure. In particular, the symmetry analysis presented in this work shows that the inversion symmetry, which is preserved by the microscopic AF order, becomes ill-defined at the mesoscopic length scale. This result underscores the importance of this novel technique for a thorough understanding of the physical properties of antiferromagnets.
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Affiliation(s)
- Taeyang Choi
- Department of Physics, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Zhan Zhang
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Hoon Kim
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, 37673, Republic of Korea
| | - Sunwook Park
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, 37673, Republic of Korea
| | - Jong-Woo Kim
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Kyeong Jun Lee
- Department of Physics, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Zahir Islam
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Ulrich Welp
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Seo Hyoung Chang
- Department of Physics, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - B J Kim
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, 37673, Republic of Korea
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18
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Hu Z, Fu L, Liu L. Tunable Magnonic Chern Bands and Chiral Spin Currents in Magnetic Multilayers. PHYSICAL REVIEW LETTERS 2022; 128:217201. [PMID: 35687427 DOI: 10.1103/physrevlett.128.217201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2022] [Revised: 03/21/2022] [Accepted: 04/28/2022] [Indexed: 06/15/2023]
Abstract
Realization of novel topological phases in magnonic band structures represents a new opportunity for the development of spintronics and magnonics with low power consumption. In this work, we show that in antiparallelly aligned magnetic multilayers, the long-range, chiral dipolar interaction between propagating magnons generates bulk bands with nonzero Chern integers and magnonic surface states carrying chiral spin currents. The surface states are highly localized and can be easily toggled between nontrivial and trivial phases through an external magnetic field. The realization of chiral surface spin currents in this dipolarly coupled heterostructure represents a magnonic implementation of the coupled wire model that has been extensively explored in electronic systems. Our work presents an easy-to-implement system for realizing topological magnonic surface states and low-dissipation spin current transport in a tunable manner.
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Affiliation(s)
- Zhongqiang Hu
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Liang Fu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Luqiao Liu
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
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19
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Liu S, Granados Del Águila A, Bhowmick D, Gan CK, Thu Ha Do T, Prosnikov MA, Sedmidubský D, Sofer Z, Christianen PCM, Sengupta P, Xiong Q. Direct Observation of Magnon-Phonon Strong Coupling in Two-Dimensional Antiferromagnet at High Magnetic Fields. PHYSICAL REVIEW LETTERS 2021; 127:097401. [PMID: 34506201 DOI: 10.1103/physrevlett.127.097401] [Citation(s) in RCA: 23] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2021] [Accepted: 07/30/2021] [Indexed: 05/08/2023]
Abstract
We report the direct observation of strong coupling between magnons and phonons in a two-dimensional antiferromagnetic semiconductor FePS_{3}, via magneto-Raman spectroscopy at magnetic fields up to 30 Tesla. A Raman-active magnon at 121 cm^{-1} is identified through Zeeman splitting in an applied magnetic field. At a field-driven resonance with a nearby phonon mode, a hybridized magnon-phonon quasiparticle is formed due to strong coupling between the two modes. We develop a microscopic model of the strong coupling in the two-dimensional magnetic lattice, which enables us to elucidate the nature of the emergent quasiparticle. Our polarized Raman results directly show that the magnons transfer their spin angular momentum to the phonons and generate phonon spin through the strong coupling.
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Affiliation(s)
- Sheng Liu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
| | - Andrés Granados Del Águila
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
| | - Dhiman Bhowmick
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
| | - Chee Kwan Gan
- Institute of High Performance Computing, 1 Fusionopolis Way, 16-16 Connexis, Singapore 138632
| | - T Thu Ha Do
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
| | - M A Prosnikov
- High Field Magnet Laboratory, HFML-EMFL, Radboud University, 6525 ED Nijmegen, Netherlands
| | - David Sedmidubský
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Zdenek Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Peter C M Christianen
- High Field Magnet Laboratory, HFML-EMFL, Radboud University, 6525 ED Nijmegen, Netherlands
| | - Pinaki Sengupta
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
| | - Qihua Xiong
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
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20
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Chen J, Wang H, Hula T, Liu C, Liu S, Liu T, Jia H, Song Q, Guo C, Zhang Y, Zhang J, Han X, Yu D, Wu M, Schultheiss H, Yu H. Reconfigurable Spin-Wave Interferometer at the Nanoscale. NANO LETTERS 2021; 21:6237-6244. [PMID: 34270271 DOI: 10.1021/acs.nanolett.1c02010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Spin waves can transfer information free of electron transport and are promising for wave-based computing technologies with low-power consumption as a solution to severe energy losses in modern electronics. Logic circuits based on the spin-wave interference have been proposed for more than a decade, while it has yet been realized at the nanoscale. Here, we demonstrate the interference of spin waves with wavelengths down to 50 nm in a low-damping magnetic insulator. The constructive and destructive interference of spin waves is detected in the frequency domain using propagating spin-wave spectroscopy, which is further confirmed by the Brillouin light scattering. The interference pattern is found to be highly sensitive to the distance between two magnetic nanowires acting as spin-wave emitters. By controlling the magnetic configurations, one can switch the spin-wave interferometer on and off. Our demonstrations are thus key to the realization of spin-wave computing system based on nonvolatile nanomagnets.
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Affiliation(s)
- Jilei Chen
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Hanchen Wang
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Tobias Hula
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
| | - Chuanpu Liu
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Song Liu
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Tao Liu
- Department of Physics, Colorado State University, Fort Collins, Colorado 80523, United States
| | - Hao Jia
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Qiuming Song
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Chenyang Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Yuelin Zhang
- Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Jinxing Zhang
- Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Dapeng Yu
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Mingzhong Wu
- Department of Physics, Colorado State University, Fort Collins, Colorado 80523, United States
| | - Helmut Schultheiss
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
| | - Haiming Yu
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
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21
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Wang Z, Yuan HY, Cao Y, Li ZX, Duine RA, Yan P. Magnonic Frequency Comb through Nonlinear Magnon-Skyrmion Scattering. PHYSICAL REVIEW LETTERS 2021; 127:037202. [PMID: 34328762 DOI: 10.1103/physrevlett.127.037202] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2021] [Accepted: 06/22/2021] [Indexed: 06/13/2023]
Abstract
An optical frequency comb consists of a set of discrete and equally spaced frequencies and has found wide applications in the synthesis over a broad range of spectral frequencies of electromagnetic waves and precise optical frequency metrology. Despite the analogies between magnons and photons in many aspects, the analog of an optical frequency comb in magnonic systems has not been reported. Here, we theoretically study the magnon-skyrmion interaction and find that a magnonic frequency comb (MFC) can be generated above a threshold driving amplitude, where the nonlinear scattering process involving three magnons prevails. The mode spacing of the MFC is equal to the breathing-mode frequency of the skyrmion and is thus tunable by either electric or magnetic means. The theoretical prediction is verified by micromagnetic simulations, and the essential physics can be generalized to a large class of magnetic solitons. Our findings open a new pathway to observe frequency comb structures in magnonic devices that may inspire the study of fundamental nonlinear physics in spintronic platforms in the future.
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Affiliation(s)
- Zhenyu Wang
- School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - H Y Yuan
- Institute for Theoretical Physics, Utrecht University, 3584 CC Utrecht, Netherlands
| | - Yunshan Cao
- School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Z-X Li
- School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Rembert A Duine
- Institute for Theoretical Physics, Utrecht University, 3584 CC Utrecht, Netherlands
| | - Peng Yan
- School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
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22
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Zhang J, Lee WK, Tu R, Rhee D, Zhao R, Wang X, Liu X, Hu X, Zhang X, Odom TW, Yan M. Spontaneous Formation of Ordered Magnetic Domains by Patterning Stress. NANO LETTERS 2021; 21:5430-5437. [PMID: 33847117 DOI: 10.1021/acs.nanolett.1c00070] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The formation of ordered magnetic domains in thin films is important for the magnetic microdevices in spin-electronics, magneto-optics, and magnetic microelectromechanical systems. Although inducing anisotropic stress in magnetostrictive materials can achieve the domain assembly, controlling magnetic anisotropy over microscale areas is challenging. In this work, we realized the microscopic patterning of magnetic domains by engineering stress distribution. Deposition of ferromagnetic thin films on nanotrenched polymeric layers induced tensile stress at the interfaces, giving rise to the directional magnetoelastic coupling to form ordered domains spontaneously. By changing the periodicity and shape of nanotrenches, we spatially tuned the geometric configuration of domains by design. Theoretical analysis and micromagnetic characterization confirmed that the local stress distribution by the topographic confinement dominates the forming mechanism of the directed magnetization.
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Affiliation(s)
- Jian Zhang
- Institute of Advanced Magnetic Materials, Hangzhou Dianzi University, Hangzhou, 310018, PR China
| | - Won-Kyu Lee
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, United States
- Department of Materials Science and Engineering, Hongik University, Seoul 04066, Korea
| | - Rui Tu
- Institute of Advanced Magnetic Materials, Hangzhou Dianzi University, Hangzhou, 310018, PR China
| | - Dongjoon Rhee
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Rongzhi Zhao
- Institute of Advanced Magnetic Materials, Hangzhou Dianzi University, Hangzhou, 310018, PR China
| | - Xinyu Wang
- Institute of Advanced Magnetic Materials, Hangzhou Dianzi University, Hangzhou, 310018, PR China
| | - Xiaolian Liu
- Institute of Advanced Magnetic Materials, Hangzhou Dianzi University, Hangzhou, 310018, PR China
| | - Xin Hu
- Institute of Advanced Magnetic Materials, Hangzhou Dianzi University, Hangzhou, 310018, PR China
| | - Xuefeng Zhang
- Institute of Advanced Magnetic Materials, Hangzhou Dianzi University, Hangzhou, 310018, PR China
| | - Teri W Odom
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Mi Yan
- Institute of Advanced Magnetic Materials, Hangzhou Dianzi University, Hangzhou, 310018, PR China
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23
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Li Z, Dong B, He Y, Chen A, Li X, Tian JH, Yan C. Propagation of Spin Waves in a 2D Vortex Network. NANO LETTERS 2021; 21:4708-4714. [PMID: 34014682 DOI: 10.1021/acs.nanolett.1c00971] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Efficient propagation of spin waves in a magnetically coupled vortex is crucial to the development of future magnonic devices. Thus far, only a double vortex can serve as spin-wave emitter or oscillator; the propagation of spin waves in the higher-order vortex is still lacking. Here, we experimentally realize a higher-order vortex (2D vortex network) by a designed nanostructure, containing four cross-type chiral substructures. We employ this vortex network as a waveguide to propagate short-wavelength spin waves (∼100 nm) and demonstrate the possibility of guiding spin waves from one vortex to the network. It is observed that the spin waves can propagate into the network through the nanochannels formed by the Bloch-Néel-type domain walls, with a propagation decay length of several micrometers. This technique paves the way for the development of low-energy, reprogrammable, and miniaturized magnonic devices.
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Affiliation(s)
- Zhenghua Li
- Key Laboratory of New Energy and Rare Earth Resource Utilization of State Ethnic Affairs Commission, School of Physics and Materials Engineering, Dalian Minzu University, Dalian, 116600, China
| | - Bin Dong
- Key Laboratory of New Energy and Rare Earth Resource Utilization of State Ethnic Affairs Commission, School of Physics and Materials Engineering, Dalian Minzu University, Dalian, 116600, China
| | - Yangyang He
- Key Laboratory of New Energy and Rare Earth Resource Utilization of State Ethnic Affairs Commission, School of Physics and Materials Engineering, Dalian Minzu University, Dalian, 116600, China
| | - Aiying Chen
- School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai, 200093, China
| | - Xiang Li
- School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai, 200093, China
| | - Jing-Hua Tian
- College of Energy, Soochow Institute for Energy and Materials Innovations & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China
| | - Chenglin Yan
- College of Energy, Soochow Institute for Energy and Materials Innovations & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China
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24
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Wang H, Madami M, Chen J, Sheng L, Zhao M, Zhang Y, He W, Guo C, Jia H, Liu S, Song Q, Han X, Yu D, Gubbiotti G, Yu H. Tunable Damping in Magnetic Nanowires Induced by Chiral Pumping of Spin Waves. ACS NANO 2021; 15:9076-9083. [PMID: 33977721 DOI: 10.1021/acsnano.1c02250] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Spin-current and spin-wave-based devices have been considered as promising candidates for next-generation information transport and processing and wave-based computing technologies with low-power consumption. Spin pumping has attracted tremendous attention and has led to interesting phenomena, including the line width broadening, which indicates damping enhancement due to energy dissipation. Recently, chiral spin pumping of spin waves has been experimentally realized and theoretically studied in magnetic nanostructures. Here, we experimentally observe by Brillouin light scattering (BLS) microscopy the line width broadening sensitive to magnetization configuration in a hybrid metal-insulator nanostructure consisting of a Co nanowire grating dipolarly coupled to a planar continuous YIG film, consistent with the results of the measured hysteresis loop. Tunable line width broadening has been confirmed independently by propagating spin-wave spectroscopy, where unidirectional spin waves are detected. Position-dependent BLS measurement unravels an oscillating-like behavior of magnon populations in Co nanowire grating, which might result from the magnon trap effect. These results are thus attractive for reconfigurable nanomagnonics devices.
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Affiliation(s)
- Hanchen Wang
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Marco Madami
- Dipartimento di Fisica e Geologia, Università di Perugia, Perugia I-06123, Italy
| | - Jilei Chen
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Lutong Sheng
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Mingkun Zhao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Yu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Wenqing He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Chenyang Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Hao Jia
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Song Liu
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Qiuming Song
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Dapeng Yu
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Gianluca Gubbiotti
- Dipartimento di Fisica e Geologia, Istituto Officina dei Materiali del Consiglio Nazionale delle Ricerche (IOM-CNR), Sede di Perugia, Via A. Pascoli, Perugia I-06123, Italy
| | - Haiming Yu
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
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25
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Etesamirad A, Rodriguez R, Bocanegra J, Verba R, Katine J, Krivorotov IN, Tyberkevych V, Ivanov B, Barsukov I. Controlling Magnon Interaction by a Nanoscale Switch. ACS APPLIED MATERIALS & INTERFACES 2021; 13:20288-20295. [PMID: 33885300 DOI: 10.1021/acsami.1c01562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The ability to control and tune magnetic dissipation is a key concept of emergent spintronic technologies. Magnon scattering processes constitute a major dissipation channel in nanomagnets, redefine their response to spin torque, and hold the promise for manipulating magnetic states on the quantum level. Controlling these processes in nanomagnets, while being imperative for spintronic applications, has remained difficult to achieve. Here, we propose an approach for controlling magnon scattering by a switch that generates nonuniform magnetic field at nanoscale. We provide an experimental demonstration in magnetic tunnel junction nanodevices, consisting of a free layer and a synthetic antiferromagnet. By triggering the spin-flop transition in the synthetic antiferromagnet and utilizing its stray field, magnon interaction in the free layer is toggled. The results open up avenues for tuning nonlinearities in magnetic neuromorphic applications and for engineering coherent magnon coupling in hybrid quantum information technologies.
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Affiliation(s)
- Arezoo Etesamirad
- Physics and Astronomy, University of California, Riverside, Riverside, California 92521, United States
| | - Rodolfo Rodriguez
- Physics and Astronomy, University of California, Riverside, Riverside, California 92521, United States
| | - Joshua Bocanegra
- Physics and Astronomy, University of California, Riverside, Riverside, California 92521, United States
| | | | - Jordan Katine
- Western Digital, San Jose, California 95119, United States
| | - Ilya N Krivorotov
- Physics and Astronomy, University of California, Irvine, Irvine, California 92697, United States
| | - Vasyl Tyberkevych
- Department of Physics, Oakland University, Rochester, Michigan 48309, United States
| | | | - Igor Barsukov
- Physics and Astronomy, University of California, Riverside, Riverside, California 92521, United States
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26
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Chen J, Hu J, Yu H. Chiral Emission of Exchange Spin Waves by Magnetic Skyrmions. ACS NANO 2021; 15:4372-4379. [PMID: 33645959 DOI: 10.1021/acsnano.0c07805] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Spin waves or their quanta magnons raise the prospect to act as information carriers in the absence of Joule heating. The challenge to excite spin waves with nanoscale wavelengths free of nanolithography becomes a critical bottleneck for the application of nanomagnonics. Magnetic skyrmions are chiral magnetic textures at the nanoscale. In this work, short-wavelength exchange spin waves are demonstrated to be chirally emitted in a low damping magnetic insulating thin film by magnetic skyrmions. The spin-wave chirality originates from the chiral spin pumping effect and is determined by the cross product of the magnetization orientation and the film normal direction. The Halbach effect explains the enhancement or attenuation of the spin-wave amplitude with a reversed sign of the Dyzaloshinskii-Moriya interaction. Controllable spin-wave propagation is demonstrated by rotating a moderate applied field. Our findings are key for building compact low-power nanomagnonic devices based on intrinsic nanoscale magnetic textures.
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Affiliation(s)
- Jilei Chen
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China
| | - Junfeng Hu
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China
| | - Haiming Yu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China
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27
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Gao ZC, Yang Y, Su Y, Hu J, Park C. The interactions between spin wave and stacked domain walls. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:065806. [PMID: 33152722 DOI: 10.1088/1361-648x/abc806] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In this study, the interactions between spin wave (SW) and stacked domain walls in a magnetic nanostrip are investigated via micromagnetic simulation. It is found that under the excitation of SW, the metastable TWVW structure consisting of a transverse wall (TW) and a vortex wall (VW) may transform into a 360° wall or may completely annihilate depending on the frequency and amplitude of the SW. In contrast, stacked TWs (STWs) structure shows good robustness. Similar to a single TW, the STWs can be moved by SW and the inside TWs exhibit coherent motions. Notably, the frequency dependence of STWs' velocity demonstrates obvious emergence, shift and disappearance of the resonant peaks. Such changes are found to be in accordance with SW reflection, which thus agrees with the mechanism of linear momentum transfer torque (LMTT). In concern with the SW transmission through STWs, we show that by varying TWs number and SW frequency, a wide range of transmission efficiency η can be obtained. At certain frequencies, η may increase with TWs number and may go beyond 100%, which indicates a lowered attenuation by STWs. On the other hand, the phase shift of the transmitted SW always increases linearly with the TWs number and can be resonantly enhanced at frequencies same as that of TWs normal modes. Mapping of SW reveals that the phase shift is a result of fast propagation of SW through TWs. The fast propagation and the low attenuation of SW through STWs suggests that STWs may serve as an excellent SW channel. Meanwhile, the induced STWs motion and the controlled SW transmission and phase shift by STWs also promises great uses of STWs in future magnonic devices and domain wall devices.
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Affiliation(s)
- Zhong-Chen Gao
- School of Physical Science and Technology, Yangzhou University, Yangzhou 225002, People's Republic of China
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Yuxuan Yang
- School of Physical Science and Technology, Yangzhou University, Yangzhou 225002, People's Republic of China
| | - Yuanchang Su
- School of Physical Science and Technology, Yangzhou University, Yangzhou 225002, People's Republic of China
| | - Jingguo Hu
- School of Physical Science and Technology, Yangzhou University, Yangzhou 225002, People's Republic of China
| | - Chan Park
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
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28
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Pelliciari J, Lee S, Gilmore K, Li J, Gu Y, Barbour A, Jarrige I, Ahn CH, Walker FJ, Bisogni V. Tuning spin excitations in magnetic films by confinement. NATURE MATERIALS 2021; 20:188-193. [PMID: 33462465 DOI: 10.1038/s41563-020-00878-0] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2020] [Accepted: 11/12/2020] [Indexed: 06/12/2023]
Abstract
Spin excitations of magnetic thin films are the founding element for magnetic devices in general. While spin dynamics have been extensively studied in bulk materials, the behaviour in mesoscopic films is less known due to experimental limitations. Here, we employ resonant inelastic X-ray scattering to investigate the spectrum of spin excitations in mesoscopic Fe films, from bulk-like films down to three unit cells. In bulk samples, we find isotropic, dispersive ferromagnons consistent with previous neutron scattering results for bulk single crystals. As the thickness is reduced, these ferromagnetic spin excitations renormalize to lower energies along the out-of-plane direction while retaining their dispersion in the in-plane direction. This thickness dependence is captured by simple Heisenberg model calculations accounting for the confinement in the out-of-plane direction through the loss of Fe bonds. Our findings highlight the effects of mesoscopic scaling on spin dynamics and identify thickness as a knob for fine tuning and controlling magnetic properties.
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Affiliation(s)
- Jonathan Pelliciari
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, USA.
| | - Sangjae Lee
- Department of Physics, Yale University, New Haven, CT, USA
| | - Keith Gilmore
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, USA
| | - Jiemin Li
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, USA
| | - Yanhong Gu
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, USA
| | - Andi Barbour
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, USA
| | - Ignace Jarrige
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, USA
| | - Charles H Ahn
- Department of Applied Physics, Yale University, New Haven, CT, USA
| | | | - Valentina Bisogni
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, USA.
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29
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Shao Q, Li P, Liu L, Yang H, Fukami S, Razavi A, Wu H, Wang K, Freimuth F, Mokrousov Y, Stiles MD, Emori S, Hoffmann A, Åkerman J, Roy K, Wang JP, Yang SH, Garello K, Zhang W. Roadmap of spin-orbit torques. IEEE TRANSACTIONS ON MAGNETICS 2021; 57:10.48550/arXiv.2104.11459. [PMID: 37057056 PMCID: PMC10091395 DOI: 10.48550/arxiv.2104.11459] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers, such as magnetic insulators, antiferromagnets, and ferrimagnets. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.
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Affiliation(s)
- Qiming Shao
- Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology
| | - Peng Li
- Department of Electrical and Computer Engineering, Auburn University
| | - Luqiao Liu
- Electrical Engineering and Computer Science, Massachusetts Institute of Technology
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore
| | - Shunsuke Fukami
- Research Institute of Electrical Communication, Tohoku University
| | - Armin Razavi
- Department of Electrical and Computer Engineering, University of California, Los Angeles
| | - Hao Wu
- Department of Electrical and Computer Engineering, University of California, Los Angeles
| | - Kang Wang
- Department of Electrical and Computer Engineering, University of California, Los Angeles
| | | | | | - Mark D Stiles
- Alternative Computing Group, National Institute of Standards and Technology
| | | | - Axel Hoffmann
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign
| | | | - Kaushik Roy
- Department of Electrical and Computer Engineering, Purdue University
| | - Jian-Ping Wang
- Electrical and Computer Engineering Department, University of Minnesota
| | | | - Kevin Garello
- IMEC, Leuven, Belgium; CEA-Spintec, Grenoble, France
| | - Wei Zhang
- Physics Department, Oakland University
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30
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Abstract
Science, engineering, and medicine ultimately demand fast information processing with ultra-low power consumption. The recently developed spin-orbit torque (SOT)-induced magnetization switching paradigm has been fueling opportunities for spin-orbitronic devices, i.e., enabling SOT memory and logic devices at sub-nano second and sub-picojoule regimes. Importantly, spin-orbitronic devices are intrinsic of nonvolatility, anti-radiation, unlimited endurance, excellent stability, and CMOS compatibility, toward emerging applications, e.g., processing in-memory, neuromorphic computing, probabilistic computing, and 3D magnetic random access memory. Nevertheless, the cutting-edge SOT-based devices and application remain at a premature stage owing to the lack of scalable methodology on the field-free SOT switching. Moreover, spin-orbitronics poises as an interdisciplinary field to be driven by goals of both fundamental discoveries and application innovations, to open fascinating new paths for basic research and new line of technologies. In this perspective, the specific challenges and opportunities are summarized to exert momentum on both research and eventual applications of spin-orbitronic devices.
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Affiliation(s)
- Yi Cao
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
| | - Guozhong Xing
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China
| | - Huai Lin
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China
| | - Nan Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Houzhi Zheng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Kaiyou Wang
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Corresponding author
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31
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Chernov AI, Kozhaev MA, Ignatyeva DO, Beginin EN, Sadovnikov AV, Voronov AA, Karki D, Levy M, Belotelov VI. All-Dielectric Nanophotonics Enables Tunable Excitation of the Exchange Spin Waves. NANO LETTERS 2020; 20:5259-5266. [PMID: 32515967 DOI: 10.1021/acs.nanolett.0c01528] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Launching and controlling magnons with laser pulses opens up new routes for applications including optomagnetic switching and all-optical spin wave emission and enables new approaches for information processing with ultralow energy dissipation. However, subwavelength light localization within the magnetic structures leading to efficient magnon excitation that does not inherently absorb light has still been missing. Here, we propose to marriage the laser-induced ultrafast magnetism and nanophotonics to efficiently excite and control spin dynamics in magnetic dielectric structures. We demonstrate that nanopatterning by a 1D grating of trenches allows localization of light in spots with sizes of tens of nanometers and thus launch the exchange standing spin waves of different orders. The relative amplitude of the exchange and magnetostatic spin waves can be adjusted on demand by modifying laser pulse polarization, incidence angle, and wavelength. Nanostructuring of the magnetic media provides a unique possibility for the selective spin manipulation, a key issue for further progress of magnonics, spintronics, and quantum technologies.
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Affiliation(s)
- Alexander I Chernov
- Russian Quantum Center, Skolkovo Innovation City, 30 Bolshoy Bulvar, Moscow 121353, Russia
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, National Research University, 9 Institutskiy per., Dolgoprudny 141700, Russia
- Vernadsky Crimean Federal University, 4 Vernadskogo Prospekt, Simferopol 295007, Russia
| | - Mikhail A Kozhaev
- Russian Quantum Center, Skolkovo Innovation City, 30 Bolshoy Bulvar, Moscow 121353, Russia
- Vernadsky Crimean Federal University, 4 Vernadskogo Prospekt, Simferopol 295007, Russia
- Prokhorov General Physics Institute RAS, 38 Vavilov Street, Moscow 119991, Russia
| | - Daria O Ignatyeva
- Russian Quantum Center, Skolkovo Innovation City, 30 Bolshoy Bulvar, Moscow 121353, Russia
- Vernadsky Crimean Federal University, 4 Vernadskogo Prospekt, Simferopol 295007, Russia
- Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory, Moscow 119991, Russia
| | - Evgeniy N Beginin
- Saratov State University, 83 Astrakhanskaya Street, Saratov 410012, Russia
| | | | - Andrey A Voronov
- Russian Quantum Center, Skolkovo Innovation City, 30 Bolshoy Bulvar, Moscow 121353, Russia
- Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory, Moscow 119991, Russia
| | - Dolendra Karki
- Physics Department, Michigan Technological University, 1400 Townsend Drive, Houghton, Michigan 49931-1295, United States
| | - Miguel Levy
- Physics Department, Michigan Technological University, 1400 Townsend Drive, Houghton, Michigan 49931-1295, United States
| | - Vladimir I Belotelov
- Russian Quantum Center, Skolkovo Innovation City, 30 Bolshoy Bulvar, Moscow 121353, Russia
- Vernadsky Crimean Federal University, 4 Vernadskogo Prospekt, Simferopol 295007, Russia
- Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory, Moscow 119991, Russia
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32
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Chen J, Hu J, Yu H. Chiral Magnonics: Reprogrammable Nanoscale Spin Wave Networks Based on Chiral Domain Walls. iScience 2020; 23:101153. [PMID: 32450517 PMCID: PMC7251948 DOI: 10.1016/j.isci.2020.101153] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/27/2020] [Revised: 04/03/2020] [Accepted: 05/06/2020] [Indexed: 11/22/2022] Open
Abstract
Spin waves offer promising perspectives as information carriers for future computational architectures beyond conventional complementary metal-oxide-semiconductor (CMOS) technology, owing to their benefits for device minimizations and low-ohmic losses. Although plenty of magnonic devices have been proposed previously, scalable nanoscale networks based on spin waves are still missing. Here, we demonstrate a reprogrammable two-dimensional spin wave network by combining the chiral exchange spin waves and chiral domain walls. The spin-wave network can be extended to two dimensions and offers unprecedented control of exchange spin waves. Each cell in the network can excite, transmit, and detect spin waves independently in the chiral domain wall, and spin-wave logics are also demonstrated. Our results open up perspectives for integrating spin waves into future logic and computing circuits and networks.
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Affiliation(s)
- Jilei Chen
- Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, Beijing, China.
| | - Junfeng Hu
- Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, Beijing, China
| | - Haiming Yu
- Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, Beijing, China.
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33
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Lee-Wong E, Xue R, Ye F, Kreisel A, van der Sar T, Yacoby A, Du CR. Nanoscale Detection of Magnon Excitations with Variable Wavevectors Through a Quantum Spin Sensor. NANO LETTERS 2020; 20:3284-3290. [PMID: 32297750 DOI: 10.1021/acs.nanolett.0c00085] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We report the optical detection of magnons with a broad range of wavevectors in magnetic insulator Y3Fe5O12 thin films by proximate nitrogen-vacancy (NV) single-spin sensors. Through multimagnon scattering processes, the excited magnons generate fluctuating magnetic fields at the NV electron spin resonance frequencies, which accelerate the relaxation of NV spins. By measuring the variation of the emitted spin-dependent photoluminescence of the NV centers, magnons with variable wavevectors up to ∼5 × 107 m-1 can be optically accessed, providing an alternative perspective to reveal the underlying spin behaviors in magnetic systems. Our results highlight the significant opportunities offered by NV single-spin quantum sensors in exploring nanoscale spin dynamics of emergent spintronic materials.
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Affiliation(s)
- Eric Lee-Wong
- Department of Physics, University of California San Diego, La Jolla, California 92093, United States
- Department of NanoEngineering, University of California San Diego, La Jolla, California 92093, United States
| | - Ruolan Xue
- Department of Physics, Harvard University, 17 Oxford Street, Cambridge, Massachusetts 02138, United States
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Feiyang Ye
- Department of Physics, University of California San Diego, La Jolla, California 92093, United States
| | - Andreas Kreisel
- Institute for Theoretical Physics, University of Leipzig, Brderstr.16, 04103 Leipzig, Germany
| | - Toeno van der Sar
- Kavli Institute of Nanoscience, Delft University of Technology, 2628CJ Delft, The Netherlands
| | - Amir Yacoby
- Department of Physics, Harvard University, 17 Oxford Street, Cambridge, Massachusetts 02138, United States
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Chunhui Rita Du
- Department of Physics, University of California San Diego, La Jolla, California 92093, United States
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34
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Han J, Zhang P, Hou JT, Siddiqui SA, Liu L. Mutual control of coherent spin waves and magnetic domain walls in a magnonic device. Science 2019; 366:1121-1125. [DOI: 10.1126/science.aau2610] [Citation(s) in RCA: 78] [Impact Index Per Article: 15.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2018] [Revised: 11/21/2018] [Accepted: 11/04/2019] [Indexed: 11/02/2022]
Abstract
The successful implementation of spin-wave devices requires efficient modulation of spin-wave propagation. Using cobalt/nickel multilayer films, we experimentally demonstrate that nanometer-wide magnetic domain walls can be applied to manipulate the phase and magnitude of coherent spin waves in a nonvolatile manner. We further show that a spin wave can, in turn, be used to change the position of magnetic domain walls by means of the spin-transfer torque effect generated from magnon spin current. This mutual interaction between spin waves and magnetic domain walls opens up the possibility of realizing all-magnon spintronic devices, in which one spin-wave signal can be used to control others by reconfiguring magnetic domain structures.
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Affiliation(s)
- Jiahao Han
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Pengxiang Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Justin T. Hou
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Saima A. Siddiqui
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Luqiao Liu
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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