Borrowed dislocations for ductility in ceramics

The inherent brittleness of ceramics, primarily due to restricted atomic motions from rigid ionic or covalent bonded structures, is a persistent challenge. This characteristic hinders dislocation nucleation in ceramics, thereby impeding the enhancement of plasticity through a dislocation-engineering strategy commonly used in metals. Finding a strategy that continuously generates dislocations within ceramics may enhance plasticity. Here, we propose a "borrowing-dislocations" strategy that uses a tailored interfacial structure with well-ordered bonds. Such an approach enables ceramics to have greatly improved tensile ductility by mobilizing a considerable number of dislocations in ceramic borrowed from metal through the interface, thereby overcoming the challenge associated with direct dislocation nucleation within ceramics. This strategy provides a way to enhance tensile ductility in ceramics.

Uncovering the phonon spectra and lattice dynamics of plastically deformable InSe van der Waals crystals

Stacking two-dimensional (2D) van der Waals (vdW) materials in a layered bulk structure provides an appealing platform for the emergence of exotic physical properties. As a vdW crystal with exceptional plasticity, InSe offers the opportunity to explore various effects arising from the coupling of its peculiar mechanical behaviors and other physical properties. Here, we employ neutron scattering techniques to investigate the correlations of plastic interlayer slip, lattice anharmonicity, and thermal transport in InSe crystals. Not only are the interlayer slip direction and magnitude well captured by shifts in the Bragg reflections, but we also observe a deviation from the expected Debye behaviour in the heat capacity and lattice thermal conductivity. Combining the experimental data with first-principles calculations, we tentatively attribute the observed evidence of strong phonon-phonon interactions to a combination of a large acoustic-optical frequency resonance and a nesting effect. These findings correlate the macroscopic plastic slip and the microscopic lattice dynamics, providing insights into the mechano-thermo coupling and modulation in 2D vdW materials.

High Ductility and Excellent Thermoelectric Performance in Te-Stabilized Cubic Ag2TexS1-x Solid Solutions

The stabilization at low temperatures of the Ag2S cubic phase could afford the design of high-performance thermoelectric materials with excellent mechanical behavior, enabling them to withstand prolonged vibrations and thermal stress. In this work, we show that the Ag2TexS1-x solid solutions, with Te content within the optimal range 0.20 ≤ x ≤ 0.30, maintain a stable cubic phase across a wide temperature range from 300 to 773 K, thus avoiding the detrimental phase transition from monoclinic to cubic phase observed in Ag2S. Notably, the Ag2TexS1-x (0.20 ≤ x ≤ 0.30) samples showed no fractures during bending tests and displayed superior ductility at room temperature compared to Ag2S, which fractured at a strain of 6.6%. Specifically, the Ag2Te0.20S0.80 sample demonstrated a bending average yield strength of 46.52 MPa at 673 K, significantly higher than that of Ag2S, whose bending average yield strength dropped from 80.15 MPa at 300 K to 12.66 MPa at 673 K. Furthermore, the thermoelectric performance of the Ag2TexS1-x (0.20 ≤ x ≤ 0.30) samples surpassed that of both InSe and pure Ag2S, with the Ag2Te0.30S0.70 sample achieving the highest ZT value of 0.59 at 723 K. These results indicate substantial potential for practical applications due to enhanced durability and thermoelectric performance.

Flexible tungsten disulfide superstructure engineering for efficient alkaline hydrogen evolution in anion exchange membrane water electrolysers

Anion exchange membrane (AEM) water electrolysis employing non-precious metal electrocatalysts is a promising strategy for achieving sustainable hydrogen production. However, it still suffers from many challenges, including sluggish alkaline hydrogen evolution reaction (HER) kinetics, insufficient activity and limited lifetime of non-precious metal electrocatalysts for ampere-level-current-density alkaline HER. Here, we report an efficient alkaline HER strategy at industrial-level current density wherein a flexible WS2 superstructure is designed to serve as the cathode catalyst for AEM water electrolysis. The superstructure features bond-free van der Waals interaction among the low Young's modulus nanosheets to ensure excellent mechanical flexibility, as well as a stepped edge defect structure of nanosheets to realize high catalytic activity and a favorable reaction interface micro-environment. The unique flexible WS2 superstructure can effectively withstand the impact of high-density gas-liquid exchanges and facilitate mass transfer, endowing excellent long-term durability under industrial-scale current density. An AEM electrolyser containing this catalyst at the cathode exhibits a cell voltage of 1.70 V to deliver a constant catalytic current density of 1 A cm-2 over 1000 h with a negligible decay rate of 9.67 μV h-1.

Capillary compression induced outstanding n-type thermoelectric power factor in CNT films towards intelligent temperature controller

One-dimensional carbon nanotubes are promising candidates for thermoelectrics because of their excellent electrical and mechanical properties. However, the large n-type power factor remains elusive in macroscopic carbon nanotubes films. Herein, we report an outstanding n-type power factor of 6.75 mW m-1 K-2 for macroscopic carbon nanotubes films with high electrical and thermal conductivity. A high-power density curl-able thermoelectric generator is fabricated with the obtained carbon nanotubes films, which exhibits a high normalized power output density of 2.75 W m-1 at a temperature difference of 85 K. The value is higher than that of previously reported flexible all-inorganic thermoelectric generators (<0.3 W m-1). An intelligent temperature controller with automated temperature-controlling ability is fabricated by assembling these thermoelectric generators, which demonstrates the potential application of the carbon nanotubes films in automated thermal management of electronic devices where requires a large thermoelectric power factor and a large thermal conductivity simultaneously.

Plasticity in single-crystalline Mg3Bi2 thermoelectric material

Most of the state-of-the-art thermoelectric materials are inorganic semiconductors. Owing to the directional covalent bonding, they usually show limited plasticity at room temperature1,2, for example, with a tensile strain of less than five per cent. Here we discover that single-crystalline Mg3Bi2 shows a room-temperature tensile strain of up to 100 per cent when the tension is applied along the (0001) plane (that is, the ab plane). Such a value is at least one order of magnitude higher than that of traditional thermoelectric materials and outperforms many metals that crystallize in a similar structure. Experimentally, slip bands and dislocations are identified in the deformed Mg3Bi2, indicating the gliding of dislocations as the microscopic mechanism of plastic deformation. Analysis of chemical bonding reveals multiple planes with low slipping barrier energy, suggesting the existence of several slip systems in Mg3Bi2. In addition, continuous dynamic bonding during the slipping process prevents the cleavage of the atomic plane, thus sustaining a large plastic deformation. Importantly, the tellurium-doped single-crystalline Mg3Bi2 shows a power factor of about 55 microwatts per centimetre per kelvin squared and a figure of merit of about 0.65 at room temperature along the ab plane, which outperforms the existing ductile thermoelectric materials3,4.

High performance magnesium-based plastic semiconductors for flexible thermoelectrics

Low-cost thermoelectric materials with simultaneous high performance and superior plasticity at room temperature are urgently demanded due to the lack of ever-lasting power supply for flexible electronics. However, the inherent brittleness in conventional thermoelectric semiconductors and the inferior thermoelectric performance in plastic organics/inorganics severely limit such applications. Here, we report low-cost inorganic polycrystalline Mg3Sb0.5Bi1.498Te0.002, which demonstrates a remarkable combination of large strain (~ 43%) and high figure of merit zT (~ 0.72) at room temperature, surpassing both brittle Bi2(Te,Se)3 (strain ≤ 5%) and plastic Ag2(Te,Se,S) and organics (zT ≤ 0.4). By revealing the inherent high plasticity in Mg3Sb2 and Mg3Bi2, capable of sustaining over 30% compressive strain in polycrystalline form, and the remarkable deformability of single-crystalline Mg3Bi2 under bending, cutting, and twisting, we optimize the Bi contents in Mg3Sb2-xBix (x = 0 to 1) to simultaneously boost its room-temperature thermoelectric performance and plasticity. The exceptional plasticity of Mg3Sb2-xBix is further revealed to be brought by the presence of a dense dislocation network and the persistent Mg-Sb/Bi bonds during slipping. Leveraging its high plasticity and strength, polycrystalline Mg3Sb2-xBix can be easily processed into micro-scale dimensions. As a result, we successfully fabricate both in-plane and out-of-plane flexible Mg3Sb2-xBix thermoelectric modules, demonstrating promising power density. The inherent remarkable plasticity and high thermoelectric performance of Mg3Sb2-xBix hold the potential for significant advancements in flexible electronics and also inspire further exploration of plastic inorganic semiconductors.

Nanoskiving of van der Waals Materials toward Edge/Basal Plane Contact Heterojunctions for High-Performance Photodetection

The unique features of edges in van der Waals materials may lead to edge-basal plane contacts that could provide new opportunities for electronic and optoelectronic devices. However, few studies have addressed edge/basal plane contact heterojunctions owing to the formidable challenges in integrating edges with the basal plane to form a heterojunction. Here, taking the example of black phosphorus (BP)/ReS2, a heterojunction with contact between the edge and the basal plane was successfully achieved by the introduction of a nanoskiving technique to fabricate BP edges with controlled orientation, followed by the dry transfer of a ReS2 flake. The deformation of BP during the nanoskiving process was clearly revealed, where interlayer slipping in the BP determined the formation of the edges. The edge/basal plane contact heterojunctions based on BP/ReS2 exhibited a reverse-rectifying behavior upon contact, and a high rectifying current was attributed to direct tunneling and Fowler-Nordheim tunneling in low and high bias regimes, respectively. As a photodetector, the heterojunction diode demonstrated an impressive responsivity of 65 A/W, a rapid response time (<10 ms), and polarization-sensitive detection under 532 nm illumination without gate biasing.

Atomic-level polarization reversal in sliding ferroelectric semiconductors

Intriguing "slidetronics" has been reported in van der Waals (vdW) layered non-centrosymmetric materials and newly-emerging artificially-tuned twisted moiré superlattices, but correlative experiments that spatially track the interlayer sliding dynamics at atomic-level remain elusive. Here, we address the decisive challenge to in-situ trace the atomic-level interlayer sliding and the induced polarization reversal in vdW-layered yttrium-doped γ-InSe, step by step and atom by atom. We directly observe the real-time interlayer sliding by a 1/3-unit cell along the armchair direction, corresponding to vertical polarization reversal. The sliding driven only by low energetic electron-beam illumination suggests rather low switching barriers. Additionally, we propose a new sliding mechanism that supports the observed reversal pathway, i.e., two bilayer units slide towards each other simultaneously. Our insights into the polarization reversal via the atomic-scale interlayer sliding provide a momentous initial progress for the ongoing and future research on sliding ferroelectrics towards non-volatile storages or ferroelectric field-effect transistors.

Near-room-temperature water-mediated densification of bulk van der Waals materials from their nanosheets

The conventional fabrication of bulk van der Waals (vdW) materials requires a temperature above 1,000 °C to sinter from the corresponding particulates. Here we report the near-room-temperature densification (for example, ∼45 °C for 10 min) of two-dimensional nanosheets to form strong bulk materials with a porosity of <0.1%, which are mechanically stronger than the conventionally made ones. The mechanistic study shows that the water-mediated activation of van der Waals interactions accounts for the strong and dense bulk materials. Initially, water adsorbed on two-dimensional nanosheets lubricates and promotes alignment. The subsequent extrusion closes the gaps between the aligned nanosheets and densifies them into strong bulk materials. Water extrusion also generates stresses that increase with moulding temperature, and too high a temperature causes intersheet misalignment; therefore, a near-room-temperature moulding process is favoured. This technique provides an energy-efficient alternative to design a wide range of dense bulk van der Waals materials with tailored compositions and properties.

Flexible molecular crystals for optoelectronic applications

The cornerstones of the advancement of flexible optoelectronics are the design, preparation, and utilization of novel materials with favorable mechanical and advanced optoelectronic properties. Molecular crystalline materials have emerged as a class of underexplored yet promising materials due to the reduced grain boundaries and defects anticipated to provide enhanced photoelectric characteristics. An inherent drawback that has precluded wider implementation of molecular crystals thus far, however, has been their brittleness, which renders them incapable of ensuring mechanical compliance required for even simple elastic or plastic deformation of the device. It is perplexing that despite a plethora of reports that have in the meantime become available underpinning the flexibility of molecular crystals, the "discovery" of elastically or plastically deformable crystals remains limited to cases of serendipitous and laborious trial-and-error approaches, a situation that calls for a systematic and thorough assessment of these properties and their correlation with the structure. This review provides a comprehensive and concise overview of the current understanding of the origins of crystal flexibility, the working mechanisms of deformations such as plastic and elastic bending behaviors, and insights into the examples of flexible molecular crystals, specifically concerning photoelectronic changes that occur in deformed crystals. We hope this summary will provide a reference for future experimental and computational efforts with flexible molecular crystals aimed towards improving their mechanical behavior and optoelectronic properties, ultimately intending to advance the flexible optoelectronic technology.

Silver Copper Chalcogenide Thermoelectrics: Advance, Controversy, and Perspective

Thermoelectric technology, which enables a direct and pollution-free conversion of heat into electricity, provides a promising path to address the current global energy crisis. Among the broad range of thermoelectric materials, silver copper chalcogenides (AgCuQ, Q = S, Se, Te) have garnered significant attention in thermoelectric community in light of inherently ultralow lattice thermal conductivity, controllable electronic transport properties, excellent thermoelectric performance across various temperature ranges, and a degree of ductility. This review epitomizes the recent progress in AgCuQ-based thermoelectric materials, from the optimization of thermoelectric performance to the rational design of devices, encompassing the fundamental understanding of crystal structures, electronic band structures, mechanical properties, and quasi-liquid behaviors. The correlation between chemical composition, mechanical properties, and thermoelectric performance in this material system is also highlighted. Finally, several key issues and prospects are proposed for further optimizing AgCuQ-based thermoelectric materials.

Enhancement of Carrier Mobility in Multilayer InSe Transistors by van der Waals Integration

Two-dimensional material indium selenide (InSe) holds great promise for applications in electronics and optoelectronics by virtue of its fascinating properties. However, most multilayer InSe-based transistors suffer from extrinsic scattering effects from interface disorders and the environment, which cause carrier mobility and density fluctuations and hinder their practical application. In this work, we employ the non-destructive method of van der Waals (vdW) integration to improve the electron mobility of back-gated multilayer InSe FETs. After introducing the hexagonal boron nitride (h-BN) as both an encapsulation layer and back-gate dielectric with the vdW interface, as well as graphene serving as a buffer contact layer, the electron mobilities of InSe FETs are substantially enhanced. The vdW-integrated devices exhibit a high electron mobility exceeding 103 cm2 V-1 s-1 and current on/off ratios of ~108 at room temperature. Meanwhile, the electron densities are found to exceed 1012 cm-2. In addition, the fabricated devices show an excellent stability with a negligible electrical degradation after storage in ambient conditions for one month. Electrical transport measurements on InSe FETs in different configurations suggest that a performance enhancement with vdW integration should arise from a sufficient screening effect on the interface impurities and an effective passivation of the air-sensitive surface.

Twisted-layer boron nitride ceramic with high deformability and strength

Moiré superlattices formed by twisted stacking in van der Waals materials have emerged as a new platform for exploring the physics of strongly correlated materials and other emergent phenomena1-5. However, there remains a lack of research on the mechanical properties of twisted-layer van der Waals materials, owing to a lack of suitable strategies for making three-dimensional bulk materials. Here we report the successful synthesis of a polycrystalline boron nitride bulk ceramic with high room-temperature deformability and strength. This ceramic, synthesized from an onion-like boron nitride nanoprecursor with conventional spark plasma sintering and hot-pressing sintering, consists of interlocked laminated nanoplates in which parallel laminae are stacked with varying twist angles. The compressive strain of this bulk ceramic can reach 14% before fracture, about one order of magnitude higher compared with traditional ceramics (less than 1% in general), whereas the compressive strength is about six times that of ordinary hexagonal boron nitride layered ceramics. The exceptional mechanical properties are due to a combination of the elevated intrinsic deformability of the twisted layering in the nanoplates and the three-dimensional interlocked architecture that restricts deformation from propagating across individual nanoplates. The advent of this twisted-layer boron nitride bulk ceramic opens a gate to the fabrication of highly deformable bulk ceramics.

Deciphering the ultra-high plasticity in metal monochalcogenides

The quest for electronic devices that offer flexibility, wearability, durability and high performance has spotlighted two-dimensional (2D) van der Waals materials as potential next-generation semiconductors. Especially noteworthy is indium selenide, which has demonstrated surprising ultra-high plasticity. To deepen our understanding of this unusual plasticity in 2D van der Waals materials and to explore inorganic plastic semiconductors, we have conducted in-depth experimental and theoretical investigations on metal monochalcogenides (MX) and transition metal dichalcogenides (MX2). We have discovered a general plastic deformation mode in MX, which is facilitated by the synergetic effect of phase transitions, interlayer gliding and micro-cracks. This is in contrast to crystals with strong atomic bonding, such as metals and ceramics, where plasticity is primarily driven by dislocations, twinning or grain boundaries. The enhancement of gliding barriers prevents macroscopic fractures through a pinning effect after changes in stacking order. The discovery of ultra-high plasticity and the phase transition mechanism in 2D MX materials holds significant potential for the design and development of high-performance inorganic plastic semiconductors.

High Thermoelectric Power Factors in Plastic/Ductile Bulk SnSe2 -Based Crystals

The recently discovered plastic/ductile inorganic thermoelectric (TE) materials open a new avenue for the fabrication of high-efficiently flexible TE devices, which can utilize the small temperature difference between human body and environment to generate electricity. However, the maximum power factor (PF) of current plastic/ductile TE materials is usually around or less than 10 µW cm-1 K-2 , much lower than the classic brittle TE materials. In this work, a record-high PF of 18.0 µW cm-1 K-2 at 375 K in plastic/ductile bulk SnSe2 -based crystals is reported, superior to all the plastic inorganic TE materials and flexible organic TE materials reported before. The origin of such high PF is from the modulation of material's stacking forms and polymorph crystal structures via simultaneously doping Cl/Br at Se-site and intercalating Cu inside the van der Waals gap, leading to the significantly enhanced carrier concentrations and mobilities. An in-plane fully flexible TE device made of the plastic/ductile SnSe2 -based crystals is successfully developed to show a record-high normalized maximum power density to 0.18 W m-1 under a temperature difference of 30 K. This work indicates that the plastic/ductile material can realize high TE power factor to achieve large output electric power density in flexible TE technology.

High-Throughput Strategies in the Discovery of Thermoelectric Materials

Searching for new high-performance thermoelectric (TE) materials that are economical and environmentally friendly is an urgent task for TE society, but the advancements are greatly limited by the time-consuming and high cost of the traditional trial-and-error method. The significant progress achieved in the computing hardware, efficient computing methods, advance artificial intelligence algorithms, and rapidly growing material data have brought a paradigm shift in the investigation of TE materials. Many electrical and thermal performance descriptors are proposed and efficient high-throughput (HTP) calculation methods are developed with the purpose to quickly screen new potential TE materials from the material databases. Some HTP experiment methods are also developed which can increase the density of information obtained in a single experiment with less time and lower cost. In addition, machine learning (ML) methods are also introduced in thermoelectrics. In this review, the HTP strategies in the discovery of TE materials are systematically summarized. The applications of performance descriptor, HTP calculation, HTP experiment, and ML in the discovery of new TE materials are reviewed. In addition, the challenges and possible directions in future research are also discussed.

Modulation of the morphotropic phase boundary for high-performance ductile thermoelectric materials

The flexible thermoelectric technique, which can convert heat from the human body to electricity via the Seebeck effect, is expected to provide a peerless solution for the power supply of wearables. The recent discovery of ductile semiconductors has opened a new avenue for flexible thermoelectric technology, but their power factor and figure-of-merit values are still much lower than those of classic thermoelectric materials. Herein, we demonstrate the presence of morphotropic phase boundary in Ag2Se-Ag2S pseudobinary compounds. The morphotropic phase boundary can be freely tuned by adjusting the material thermal treatment processes. High-performance ductile thermoelectric materials with excellent power factor (22 μWcm-1 K-2) and figure-of-merit (0.61) values are realized near the morphotropic phase boundary at 300 K. These materials perform better than all existing ductile inorganic semiconductors and organic materials. Furthermore, the in-plane flexible thermoelectric device based on these high-performance thermoelectric materials demonstrates a normalized maximum power density reaching 0.26 Wm-1 under a temperature gradient of 20 K, which is at least two orders of magnitude higher than those of flexible organic thermoelectric devices. This work can greatly accelerate the development of flexible thermoelectric technology.

Flexible Carbon Nanotube-Epitaxially Grown Nanocrystals for Micro-Thermoelectric Modules

Flexible thermoelectric materials have attracted increasing interest because of their potential use in thermal energy harvesting and high-spatial-resolution thermal management. However, a high-performance flexible micro-thermoelectric device (TED) compatible with the microelectronics fabrication process has not yet been developed. Here a universal epitaxial growth strategy is reported guided by 1D van der Waals-coupling, to fabricate freestanding and flexible hybrids comprised of single-wall carbon nanotubes and ordered (Bi,Sb)2 Te3 nanocrystals. High power factors ranging from ≈1680 to ≈1020 µW m-1 K-2 in the temperature range of 300-480 K, combined with a low thermal conductivity yield a high average figure of merit of ≈0.81. The fabricated flexible micro-TED module consisting of two p-n couples of freestanding thermoelectric hybrids has an unprecedented open circuit voltage of ≈22.7 mV and a power density of ≈0.36 W cm-2 under ≈30 K temperature difference, and a net cooling temperature of ≈22.4 K and a heat absorption density of ≈92.5 W cm-2 .

Anisotropic ductility and thermoelectricity of van der Waals GeAs

Wearable thermoelectric applications require materials with both high energy conversion efficiency and excellent flexibility/deformability. Inorganic thermoelectric materials have shown high conversion efficiency, but they are usually brittle and have poor mechanical flexibility, which makes their integration into flexible devices a challenging task. GeAs is a group IV-V binary compound with a van der Waals layered structure, and its thermoelectric response has been reported. Herein, we investigate the mechanical and thermoelectric properties of GeAs crystal by a combination of density functional theory and density functional perturbation theory methods. Our results show that GeAs features a moderately dispersive valence band and multivalley convergence, which give rise to a large Seebeck coefficient and power factor when it is properly p-doped. Remarkably, its electrical transport in the out-of-plane direction even outperforms that in the in-plane direction, while phonon transport is suppressed, leading to a predominant thermoelectric response in the vertical direction. More interestingly, GeAs demonstrates a structural stiffness higher than thermoelectric CuInTe2 and PbTe, and a ductility ratio comparable to a recently discovered plastic semiconductor, InSe. The stress-strain curve simulation reveals that GeAs can withstand deformations up to 20%. These findings showcase GeAs as a ductile thermoelectric material suitable for wearable devices and energy conversion.

Multislip-enabled morphing of all-inorganic perovskites

All-inorganic lead halide perovskites (CsPbX3, X = Cl, Br or I) are becoming increasingly important for energy conversion and optoelectronics because of their outstanding performance and enhanced environmental stability. Morphing perovskites into specific shapes and geometries without damaging their intrinsic functional properties is attractive for designing devices and manufacturing. However, inorganic semiconductors are often intrinsically brittle at room temperature, except for some recently reported layered or van der Waals semiconductors. Here, by in situ compression, we demonstrate that single-crystal CsPbX3 micropillars can be substantially morphed into distinct shapes (cubic, L and Z shapes, rectangular arches and so on) without localized cleavage or cracks. Such exceptional plasticity is enabled by successive slips of partial dislocations on multiple [Formula: see text] systems, as evidenced by atomic-resolution transmission electron microscopy and first-principles and atomistic simulations. The optoelectronic performance and bandgap of the devices were unchanged. Thus, our results suggest that CsPbX3 perovskites, as potential deformable inorganic semiconductors, may have profound implications for the manufacture of advanced optoelectronics and energy systems.

Synergetic Enhancement of Strength-Ductility and Thermoelectric Properties of Ag2 Te by Domain Boundaries

Simultaneously improving the mechanical and thermoelectric (TE) properties is significant for the engineering applications of inorganic TE materials. In this work, a novel nanodomain strategy is developed for Ag2 Te compounds to yield 40% and 200% improved compressive strength (160 MPa) and fracture strain (16%) when compared to domain-free samples (115 MPa and 5.5%, respectively). The domained samples also achieve a 45% improvement in average ZT value. The domain boundaries (DBs) provide extra sites for dislocation nucleation while pinning the dislocation movement, resulting in superior strength and ductility. In addition, phonon scattering induced by DBs suppresses the lattice thermal conductivity of Ag2 Te and also reduces the weighted mobility. These findings provide new insights into grain and DB engineering for high-performance inorganic semiconductors with robust mechanical properties.

Flexible Ag-S-Te System with Promising Room-Temperature Thermoelectric Performance

Silver chalcogenides demonstrate great potential as flexible thermoelectric materials due to their excellent ductility and tunable electrical and thermal transport properties. In this work, we report that the amorphous/crystalline phase ratio and thermoelectric properties of the Ag₂S_xTe_1-x (x = 0.55-0.75) samples can be modified by altering the S content. The room-temperature power factor of the Ag₂S_0.55Te_0.45 sample is 4.9 μW cm^-1 K^-2, and a higher power factor can be achieved by decreasing the carrier concentration as predicted by the single parabolic band model. The addition of a small amount of excessive Te into Ag₂S_0.55Te_0.45 (Ag₂S_0.55Te_0.45+y) not only enhances the power factor by decreasing the carrier concentration but also reduces the total thermal conductivity due to decreased electronic thermal conductivity. Owing to the effectively optimized carrier concentration, the thermoelectric power factor and dimensionless figure of merit zT of the sample with y = 0.007 reaches, respectively, 6.2 μW cm^-1 K^-2 and 0.39, while the excellent plastic deformability is well maintained, demonstrating its promising potential as a flexible thermoelectric material at room temperature.

Incommensurately Modulated Structure in AgCuSe-Based Thermoelectric Materials for Intriguing Electrical, Thermal, and Mechanical Properties

AgCuSe-based materials have attracted great attentions recently in thermoelectric (TE) field due to their extremely high electron mobility, ultralow lattice thermal conductivity, and abnormal "brittle-ductile" transition at room temperature. However, although the investigation on the crystal structure of AgCuSe low-temperature phase (named as β-AgCuSe) was started more than half a century before, it is still in controversy yet, which greatly limits the understanding of its intriguing electrical, thermal, and mechanical performance. In this work, via adopting the advanced three-dimensional electron diffraction technique, this study finds that the AgCuSe-based materials crystalize in an incommensurately modulated structure with an orthorhombic Pmmn(0β1/2)s00 superspace group. The local lattice distortion in the incommensurately modulated structure has weak effects on the conduction band minimum due to the delocalized and isotropic feature of Ag 5s states, leading to high carrier mobility. Likewise, the inhomogeneous, weak, and anisotropic Ag-Se bonds result in the high degree of anharmonicity and ultralow lattice thermal conductivity. Furthermore, alloying S in AgCuSe reinforces the interaction between the adjacent Ag-Se layers, yielding the "brittle-ductile" transition at room temperature. This work well interprets the structure-performance relationship of AgCuSe-based materials and sheds light on the future investigation of this class of promising TE materials.

Superflexible Inorganic Ag2 Te0.6 S0.4 Fiber with High Thermoelectric Performance

Fiber-based inorganic thermoelectric (TE) devices, owing to the small size, light-weight, flexibility, and high TE performance, are promising for applications in flexible thermoelectrics. Unfortunately, current inorganic TE fibers are strictly constrained by limited mechanical freedom because of the undesirable tensile strain, typically limited to a value of 1.5%, posing a strong obstacle for further application in large-scale wearable systems. Here, a superflexible Ag₂ Te_0.6 S_0.4 inorganic TE fiber is demonstrated that provides a record tensile strain of 21.2%, such that it enables various complex deformations. Importantly, the TE performance of the fiber shows high stability after ≈1000 cycles of bending and releasing processes with a small bending radius of 5 mm. This allows for the integration of the inorganic TE fiber into 3D wearable fabric, yielding a normalized power density of 0.4 µW m^-1 K^-2 under the temperature difference of 20 K, which is approaching the high-performance Bi₂ Te₃ -based inorganic TE fabric and is nearly two orders of magnitude higher than the organic TE fabrics. These results highlight that the inorganic TE fiber with both superior shape-conformable ability and high TE performance may find potential applications in wearable electronics.

Probing Anisotropic Deformation and Near-Infrared Emission Tuning in Thin-Layered InSe Crystal under High Pressure

Indium selenide (InSe) exhibits high lattice compressibility and an extraordinary capability of tailoring the optical band gap under pressure beyond other 2D materials. Herein, by applying hydrostatic pressure via a diamond anvil cell, we revealed an anisotropic deformation dynamic and efficient manipulation of near-infrared light emission in thin-layered InSe strongly correlated to layer numbers (N = 5-30). As N > 20, the InSe lattice is compressed in all directions, and the intralayer compression leads to widening of the band gap, resulting in an emission blue shift (∼120 meV at 1.5 GPa). In contrast, as N ≤ 15, an efficient emission red shift is observed from band gap shrinkage (rate of 100 meV GPa^-1), which is attributed to the predominant uniaxial interlayer compression because of the high strain resistance along the InSe-diamond interface. These findings advance the understanding of pressure-induced lattice deformation and optical transition evolution in InSe and could be applied to other 2D materials.

Three dimensional architected thermoelectric devices with high toughness and power conversion efficiency

For decades, the widespread application of thermoelectric generators has been plagued by two major limitations: heat stagnation in its legs, which limits power conversion efficiency, and inherent brittleness of its constituents, which accelerates thermoelectric generator failure. While notable progress has been made to overcome these quintessential flaws, the state-of-the-art suffers from an apparent mismatch between thermoelectric performance and mechanical toughness. Here, we demonstrate an approach to potentially enhance the power conversion efficiency while suppressing the brittle failure in thermoelectric materials. By harnessing the enhanced thermal impedance induced by the cellular architecture of microlattices with the exceptional strength and ductility (>50% compressive strain) derived from partial carbonization, we fabricate three-dimensional (3D) architected thermoelectric generators that exhibit a specific energy absorption of ~30 J g^-1 and power conversion efficiency of ~10%. We hope our work will improve future thermoelectric generator fabrication design through additive manufacturing with excellent thermoelectric properties and mechanical robustness.

Toughening Thermoelectric Materials: From Mechanisms to Applications

With the tendency of thermoelectric semiconductor devices towards miniaturization, integration, and flexibility, there is an urgent need to develop high-performance thermoelectric materials. Compared with the continuously enhanced thermoelectric properties of thermoelectric materials, the understanding of toughening mechanisms lags behind. Recent advances in thermoelectric materials with novel crystal structures show intrinsic ductility. In addition, some promising toughening strategies provide new opportunities for further improving the mechanical strength and ductility of thermoelectric materials. The synergistic mechanisms between microstructure-mechanical performances are expected to show a large set of potential applications in flexible thermoelectric devices. This review explores enlightening research into recent intrinsically ductile thermoelectric materials and promising toughening strategies of thermoelectric materials to elucidate their applications in the field of flexible thermoelectric devices.

Uniaxial Strain Dependence on Angle-Resolved Optical Second Harmonic Generation from a Few Layers of Indium Selenide

Indium selenide (InSe) is an emerging van der Waals material, which exhibits the potential to serve in excellent electronic and optoelectronic devices. One of the advantages of layered materials is their application to flexible devices. How strain alters the electronic and optical properties is, thus, an important issue. In this work, we experimentally measured the strain dependence on the angle-resolved second harmonic generation (SHG) pattern of a few layers of InSe. We used the exfoliation method to fabricate InSe flakes and measured the SHG images of the flakes with different azimuthal angles. We found the SHG intensity of InSe decreased, while the compressive strain increased. Through first-principles electronic structure calculations, we investigated the strain dependence on SHG susceptibilities and the corresponding angle-resolved SHG pattern. The experimental data could be fitted well by the calculated results using only a fitting parameter. The demonstrated method based on first-principles in this work can be used to quantitatively model the strain-induced angle-resolved SHG patterns in 2D materials. Our obtained results are very useful for the exploration of the physical properties of flexible devices based on 2D materials.

Carrier and phonon transport in 2D InSe and its Janus structures

Recently, two-dimensional (2D) Indium Selenide (InSe) has been receiving much attention in the scientific community due to its reduced size, extraordinary physical properties, and potential applications in various fields. In this review, we discussed the recent research advancement in the carrier and phonon transport properties of 2D InSe and its related Janus structures. We first introduced the progress in the synthesis of 2D InSe. We summarized the recent experimental and theoretical works on the carrier mobility, thermal conductivity, and thermoelectric characteristics of 2D InSe. Based on the Boltzmann transport equation (BTE), the mechanisms underlying carrier or phonon scattering of 2D InSe were discussed in detail. Moreover, the structural and transport properties of Janus structures based on InSe were also presented, with an emphasis on the theoretical simulations. At last, we discussed the prospects for continued research of 2D InSe.

Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor

Two-dimensional (2D) van-der-Waals (vdW) layered ferroelectric semiconductors are highly desired for in-memory computing and ferroelectric photovoltaics or detectors. Beneficial from the weak interlayer vdW-force, controlling the structure by interlayer twist/translation or doping is an effective strategy to manipulate the fundamental properties of 2D-vdW semiconductors, which has contributed to the newly-emerging sliding ferroelectricity. Here, we report unconventional room-temperature ferroelectricity, both out-of-plane and in-plane, in vdW-layered γ-InSe semiconductor triggered by yttrium-doping (InSe:Y). We determine an effective piezoelectric constant of ∼7.5 pm/V for InSe:Y flakes with thickness of ∼50 nm, about one order of magnitude larger than earlier reports. We directly visualize the enhanced sliding switchable polarization originating from the fantastic microstructure modifications including the stacking-faults elimination and a subtle rhombohedral distortion due to the intralayer compression and continuous interlayer pre-sliding. Our investigations provide new freedom degrees of structure manipulation for intrinsic properties in 2D-vdW-layered semiconductors to expand ferroelectric candidates for next-generation nanoelectronics.

Large-Scale Silver Sulfide Nanomesh Membranes with Ultrahigh Flexibility

The growth of flexible semiconductor thin films and membranes is highly desirable for the fabrication of next-generation wearable devices. In this work, we have developed a one-step, surface tension-driven method for facile and scalable growth of silver sulfide (Ag₂S) membranes with a nanomesh structure. The nanomesh membrane can in principle reach infinite size but only limited by the reactor size, while the thickness is self-limited to ca. 50 nm. In particular, the membrane can be continuously regenerated at the water surface after being transferred for mechanical and electronic tests. The free-standing membrane demonstrates exceptional flexibility and strength, resulting from the nanomesh structure and the intrinsic plasticity of the Ag₂S ligaments, as revealed by robust manipulation, nanoindentation tests and a pseudo-in situ tensile test under scanning electron microscope. Bendable electronic resistance-switching devices are fabricated based on the nanomesh membrane.

High-throughput screening of 2D van der Waals crystals with plastic deformability

Inorganic semiconductors exhibit multifarious physical properties, but they are prevailingly brittle, impeding their application in flexible and hetero-shaped electronics. The exceptional plasticity discovered in InSe crystal indicates the existence of abundant plastically deformable two-dimensional van der Waals (2D vdW) materials, but the conventional trial-and-error method is too time-consuming and costly. Here we report on the discovery of tens of potential 2D chalcogenide crystals with plastic deformability using a nearly automated and efficient high-throughput screening methodology. Seven candidates e.g., famous MoS₂, GaSe, and SnSe₂ 2D materials are carefully verified to show largely anisotropic plastic deformations, which are contributed by both interlayer and cross-layer slips involving continuous breaking and reconstruction of chemical interactions. The plasticity becomes a new facet of 2D materials for deformable or flexible electronics.

From Brittle to Ductile: A Scalable and Tailorable All-Inorganic Semiconductor Foil through a Rolling Process toward Flexible Thermoelectric Modules

Inorganic thermoelectric (TE) materials with outstanding capacity for energy conversion are expected to be promising eco-friendly and renewable power sources, but they are always intrinsically brittle, restricting their development in flexible TE electronics. Therefore, we have developed a facile manufacturing method of large-scale all-inorganic silver chalcogenide foils and flexible TE generators in this work. A rolling process, as an effective and facile molding technique, is applied in ductile TE materials. The figure-of-merit for flexibility of this free-standing foil is in the range of 0.02-0.13, suggesting the superior flexibility of the all-inorganic TE foils. A high TE figure-of-merit ZT of 0.47 at room temperature is reached for Ag₂S_0.45Se_0.45Te_0.1, which is one of the most promising room-temperature ZTs among flexible TE materials. A proof-of-concept flexible TE generator based on silver chalcogenide foils achieves an open-circuit voltage of 1.19 mV and an output power density of 1.8 mW/m² with a temperature difference of 2.7 °C across the TE leg, showing great potential in heat-to-electricity conversion.

Polymer-like Inorganic Double Helical van der Waals Semiconductor

In high-performance flexible and stretchable electronic devices, conventional inorganic semiconductors made of rigid and brittle materials typically need to be configured into geometrically deformable formats and integrated with elastomeric substrates, which leads to challenges in scaling down device dimensions and complexities in device fabrication and integration. Here we report the extraordinary mechanical properties of the newly discovered inorganic double helical semiconductor tin indium phosphate. This spiral-shape double helical crystal shows the lowest Young's modulus (13.6 GPa) among all known stable inorganic materials. The large elastic (>27%) and plastic (>60%) bending strains are also observed and attributed to the easy slippage between neighboring double helices that are coupled through van der Waals interactions, leading to the high flexibility and deformability among known semiconducting materials. The results advance the fundamental understanding of the unique polymer-like mechanical properties and lay the foundation for their potential applications in flexible electronics and nanomechanics disciplines.

Thickness- and Twist-Angle-Dependent Interlayer Excitons in Metal Monochalcogenide Heterostructures

Interlayer excitons, or bound electron-hole pairs whose constituent quasiparticles are located in distinct stacked semiconducting layers, are being intensively studied in heterobilayers of two-dimensional semiconductors. They owe their existence to an intrinsic type-II band alignment between both layers that convert these into p-n junctions. Here, we unveil a pronounced interlayer exciton (IX) in heterobilayers of metal monochalcogenides, namely, γ-InSe on ε-GaSe, whose pronounced emission is adjustable just by varying their thicknesses given their number of layers dependent direct band gaps. Time-dependent photoluminescense spectroscopy unveils considerably longer interlayer exciton lifetimes with respect to intralayer ones, thus confirming their nature. The linear Stark effect yields a bound electron-hole pair whose separation d is just (3.6 ± 0.1) Å with d being very close to d_Se = 3.4 Å which is the calculated interfacial Se separation. The envelope of IX is twist-angle-dependent and describable by superimposed emissions that are nearly equally spaced in energy, as if quantized due to localization induced by the small moiré periodicity. These heterostacks are characterized by extremely flat interfacial valence bands making them prime candidates for the observation of magnetism or other correlated electronic phases upon carrier doping.

Theoretical insights into the Peierls plasticity in SrTiO3 ceramics via dislocation remodelling

An in-depth understanding of the dislocations motion process in non-metallic materials becomes increasingly important, stimulated by the recent emergence of ceramics and semiconductors with unexpected room temperature dislocation-mediated plasticity. In this work, local misfit energy is put forward to accurately derive the Peierls stress and model the dislocation process in SrTiO₃ ceramics instead of the generalized stacking fault (GSF) approach, which considers the in-plane freedom degrees of the atoms near the shear plane and describes the breaking and re-bonding processes of the complex chemical bonds. Particularly, we discover an abnormal shear-dependence of local misfit energy, which originates from the re-bonding process of the Ti-O bonds and the reversal of lattice dipoles. In addition, this approach predicts that oxygen vacancies in the SrTiO₃ can facilitate the nucleation and activation of dislocations with improvement of fracture toughness, owing to the reduction of average misfit energy and Peierls stress due to the disappearance of lattice dipole reversal. This work provides undiscovered insights into the dislocation process in non-metallic materials, which may bring implications to tune the plasticity and explore unknown ductile compositions.

Many ceramics and semiconductors are brittle at moderate temperatures, which can be a concern for applications. Here authors present a theoretical approach based on local misfit energy to accurately derive the Peierls stress and model the dislocation process in SrTiO₃, which provides insights into the plasticity around room temperature.

Achieving metal-like malleability and ductility in Ag2Te1-S inorganic thermoelectric semiconductors with high mobility

Inorganic semiconductor Ag₂Te_1-xS_x has been recently found to exhibit unexpected plastic deformation with compressive strain up to 30%. However, the origin of the abnormal plasticity and how to simultaneously achieve superb ductility and high mobility are still elusive. Here, we demonstrate that crystalline/amorphous Ag₂Te_1-xS_x (x = 0.3, 0.4, and 0.5) composites can exhibit excellent compressive strain up to 70% if the monoclinic Ag₂Te phase, which commonly exists in the matrix, is eliminated. Significantly, an ultra-high tensile elongation reaching 107.3% was found in Ag₂Te_0.7S_0.3, which is the highest one yet reported in the system and even surpasses those achieved in some metals and high-entropy alloys. Moreover, high mobility of above 1000 cm² V⁻¹ s⁻¹ at room temperature and good thermoelectric performance are simultaneously maintained. A modified Ashby plot with ductility factor versus carrier mobility is thereby proposed to highlight the potential of solid materials for applications in flexible/wearable electronics.

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Phase structure plays a crucial role in determining the mechanical properties of inorganic semiconductors Ag₂Te_1-xS_x

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Metal-like malleability and ductility with a record-high tensile elongation of 107.3% are achieved in Ag₂Te_1-xS_x

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The plastic Ag₂Te_1-xS_x with decent thermoelectric performance could exhibit promising applications in the field of flexible/wearable electronics

Plastic/Ductile Bulk 2D van der Waals Single-Crystalline SnSe2 for Flexible Thermoelectrics

The recently discovered ductile/plastic inorganic semiconductors pave a new avenue toward flexible thermoelectrics. However, the power factors of current ductile/plastic inorganic semiconductors are usually low (below 5 µW cm^-1  K^-2 ) as compared with classic brittle inorganic thermoelectric materials, which greatly limit the electrical output power for flexible thermoelectrics. Here, large plasticity and high power factor in bulk two-dimensional van der Waals (2D vdW) single-crystalline SnSe₂ are reported. SnSe₂ crystals exhibit large plastic strains at room temperature and they can be morphed into various shapes without cracking, which is well captured by the inherent large deformability factor. As a semiconductor, the electrical transport properties of SnSe₂ can be readily tuned in a wide range by doping a tiny amount of halogen elements. A high power factor of 10.8 µW cm^-1  K^-2 at 375 K along the in-plane direction is achieved in plastic single-crystalline Br-doped SnSe₂ , which is the highest value among the reported flexible inorganic and organic thermoelectric materials. Combining the good plasticity, excellent power factors, as well as low-cost and nontoxic elements, bulk 2D vdW single-crystalline SnSe₂ shows great promise to achieve high power density for flexible thermoelectrics.

Designing Inorganic Semiconductors with Cold-Rolling Processability

While metals can be readily processed and reshaped by cold rolling, most bulk inorganic semiconductors are brittle materials that tend to fracture when plastically deformed. Manufacturing thin sheets and foils of inorganic semiconductors is therefore a bottleneck problem, severely restricting their use in flexible electronic applications. It is recently reported that a few single-crystalline 2D van der Waals (vdW) semiconductors, such as InSe, are deformable under compressive stress. Here it is demonstrated that intralayer fracture toughness can be tailored via compositional design to make inorganic semiconductors processable by cold rolling. Systematic ab initio calculations covering a range of van der Waals semiconductors homologous to InSe are reported, leading to material-property maps that forecast trends in both the susceptibility to interlayer slip and the intralayer fracture toughness against cracking. GaSe is predicted, and experimentally confirmed, to be practically amenable to being rolled to large (three quarters) thickness reduction and length extension by a factor of three. The fracture toughness and cleavage energy are predicted to be 0.25 MPa m^0.5 and 15 meV Å^-2 , respectively. The findings open a new realm of possibility for alloy selection and design toward processing-friendly group-III chalcogenides for practical applications.

Synthesis of Spiro[5.5]trienones- and Spiro[4.5]trienones-Fused Selenocyanates via Electrophilic Selenocyanogen Cyclization and Dearomative Spirocyclization

A practical strategy for the synthesis of spiro[5.5]trienones-fused selenocyanates and spiro[4.5]trienones-fused selenocyanates through electrophilic selenocyanogen cyclization and dearomative spirocyclization is reported. This approach was conducted under mild conditions with broad substrate scope and good functional group tolerance. The utility of this procedure is exhibited in the late-stage functionalization of nature product and drug molecules.

Semiconductors flex thermoelectric power

Ductile inorganic semiconductors can help enable self-powered wearable electronics.

Flexible thermoelectrics based on ductile semiconductors

Flexible thermoelectrics provide a different solution for developing portable and sustainable flexible power supplies. The discovery of silver sulfide-based ductile semiconductors has driven a shift in the potential for flexible thermoelectrics, but the lack of good p-type ductile thermoelectric materials has restricted the reality of fabricating conventional cross-plane π-shaped flexible devices. We report a series of high-performance p-type ductile thermoelectric materials based on the composition-performance phase diagram in AgCu(Se,S,Te) pseudoternary solid solutions, with high figure-of-merit values (0.45 at 300 kelvin and 0.68 at 340 kelvin) compared with other flexible thermoelectric materials. We further demonstrate thin and flexible π-shaped devices with a maximum normalized power density that reaches 30 μW cm^-2 K^-2. This output is promising for the use of flexible thermoelectrics in wearable electronics.

Sugar-Derived Isotropic Nanoscale Polycrystalline Graphite Capable of Considerable Plastic Deformation

Obtaining large plastic deformation in polycrystalline van der Waals (vdW) materials is challenging. Achieving such deformation is especially difficult in graphite because it is highly anisotropic. The development of sugar-derived isotropic nanostructured polycrystalline graphite (SINPG) is discussed herein. The structure of this material preserves the high in-plane rigidity and out-of-plane flexibility of graphene layers and enables prominent plasticity by activating the rotation of nanoscale (5-10 nm) grains. Thus, micrometer-sized SINPG samples demonstrate enhanced compressive strengths of up to 3.0 GPa and plastic strains of 30-50%. These findings suggest a new pathway for enabling plastic deformation in otherwise brittle vdW materials. This new class of nanostructured carbon materials is suitable for use in a broad range of fields, from semiconductor to aerospace applications.

High figure-of-merit and power generation in high-entropy GeTe-based thermoelectrics

The high-entropy concept provides extended, optimized space of a composition, resulting in unusual transport phenomena and excellent thermoelectric performance. By tuning electron and phonon localization, we enhanced the figure-of-merit value to 2.7 at 750 kelvin in germanium telluride–based high-entropy materials and realized a high experimental conversion efficiency of 13.3% at a temperature difference of 506 kelvin with the fabricated segmented module. By increasing the entropy, the increased crystal symmetry delocalized the distribution of electrons in the distorted rhombohedral structure, resulting in band convergence and improved electrical properties. By contrast, the localized phonons from the entropy-induced disorder dampened the propagation of transverse phonons, which was the origin of the increased anharmonicity and largely depressed lattice thermal conductivity. We provide a paradigm for tuning electron and phonon localization by entropy manipulation, but we have also demonstrated a route for improving the performance of high-entropy thermoelectric materials.