Three-dimensional cross-nanowire networks recover full terahertz state

A thorough experimental assessment of THz-TDS plasma diagnostic techniques for nuclear fusion applications

In this paper, the study of a plasma diagnostic system based on the THz time domain spectroscopy technique is presented. Such a system could potentially probe a large part of the electromagnetic spectrum currently covered by several other diagnostics in a single measurement. This feature, keeping in mind the basic requirements for plasma diagnostics in nuclear fusion experiments, such as robustness and hard environment applicability, as well as durability and low maintenance, makes the diagnostic of great interest. A conceptual design of the THz-TDS diagnostic has been developed, starting from the well-established classical microwave and far infrared plasma diagnostics landscape. The physical constraints and required instrumental characteristics have been studied and are described in detail here, together with the solutions available for each type of plasma measurement. Specific experimental laboratory tests of the different experimental configurations have been carried out, evaluating the capacity and potential of the novel diagnostic, together with the instrumental constraint, within the diagnostic parameter space.

Tunable Enhanced Second-Harmonic Generation in InP-InAsP Quantum Well Nanomembranes

Second-harmonic generation (SHG) offers a convenient approach for infrared-to-visible light conversion in tunable nanoscale light sources and optical communication. Semiconductor nanostructures offer rich possibilities to tailor their nonlinear optical properties. In this study, strong second-harmonic generation in InP nanomembranes with InAsP quantum well (QW) is demonstrated. Compared with bulk InP, up to 100 times enhancement of SHG is achieved in the short-wave infrared range. This enhancement is shown to be predominantly induced by the resonance-enhanced absorption and quantum confinement of fundamental wavelengths in the InAsP QW. The thin nanomembrane structure will also provide nanocavity enhancement for second-harmonic wavelengths. The enhanced SHG peak wavelengths can also be tuned by changing the QW composition. These findings provide an effective strategy for enhancing and manipulating the second-harmonic generation in semiconductor quantum-confined nanostructures for on-chip all-optical applications.

Terahertz flexible multiplexing chip enabled by synthetic topological phase transitions

Flexible multiplexing chips that permit reconfigurable multidimensional channel utilization are indispensable for revolutionary 6G terahertz communications, but the insufficient manipulation capability of terahertz waves prevents their practical implementation. Herein, we propose the first experimental demonstration of a flexible multiplexing chip for terahertz communication by revealing the unique mechanism of topological phase (TP) transition and perseveration in a heterogeneously coupled bilayer valley Hall topological photonic system. The synthetic and individual TPs operated in the coupled and decoupled states enable controllable on-chip modular TP transitions and subchannel switching. Two time-frequency interleaved subchannels support 10- and 12-Gbit/s QAM-16 high-speed data streams along corresponding paths over carriers of 120 and 130 GHz with 2.5- and 3-GHz bandwidths, respectively. This work unlocks interlayer heterogeneous TPs for inspiring ingenious on-chip terahertz-wave regulation, allowing functionality-reconfigurable, compactly integrated and CMOS-compatible chips.

A handheld polarimetric imaging device and calibration technique for accurate mapping of terahertz Stokes vectors

In recent years, handheld and portable terahertz instruments have been in rapid development for various applications ranging from non-destructive testing to biomedical imaging and sensing. For instance, we have deployed our Portable Handheld Spectral Reflection (PHASR) Scanners for in vivo full-spectroscopic imaging of skin burns in large animal models in operating room settings. In this paper, we debut the polarimetric version of the PHASR Scanner, and describe a generalized calibration technique to map the spatial and spectral dependence of the Jones matrix of an imaging scanner across its field of view. Our design is based on placement of two orthogonal photoconductive antenna (PCA) detectors separated by a polarizing beam splitter in the PHASR Scanner housing. We show that as few as three independent measurements of a well-characterized polarimetric calibration target are sufficient to determine the polarization state of the incident beam at the sample location, as well as to extract the Jones propagation matrix from the sample location to the detectors. We have tested the accuracy of our scanner by validating polarimetric measurements obtained from a birefringent crystal rotated to various angles, as compared to the theoretically predicted response of the sample. This new version of our PHASR scanner can be used for high-speed imaging and investigation of heterogeneity of polarization-sensitive samples in the field.

Low-frequency conductivity of low wear high-entropy alloys

High-entropy alloys (HEAs) provide new research avenues for alloy combinations in the periodic table, opening numerous possibilities in novel-alloy applications. However, their electrical characteristics have been relatively underexplored. The challenge in establishing an HEA electrical conductivity model lies in the changes in electronic characteristics caused by lattice distortion and complexity of nanostructures. Here we show a low-frequency electrical conductivity model for the Nb-Mo-Ta-W HEA system. The cocktail effect is found to explain trends in electrical-conductivity changes in HEAs, while the magnitude of the reduction is understood by the calculated plasma frequency, free electron density, and measured relaxation time by terahertz spectroscopy. As a result, the refractory HEA Nb15Mo35Ta15W35 thin film exhibits both high hardness and excellent conductivity. This combination of Nb15Mo35Ta15W35 makes it suitable for applications in atomic force microscopy probe coating, significantly improving their wear resistance and atomic-scale image resolution.

Simultaneous measurement of orthogonal terahertz fields via an emission multiplexing scheme

We propose a polarization sensitive terahertz time-domain spectrometer that can record orthogonally polarized terahertz fields simultaneously, using fibre-coupled photoconductive antennas and a scheme that modulated the emitter's polarization. The s and p channels of the multi-pixel terahertz emitter were modulated at different frequencies, thereby allowing orthogonal waveforms to be demultiplexed from the recorded signal in post-processing. The performance of the multi-pixel emitter used in this multiplexing scheme was comparable to that of a commercial single-polarization H-dipole antenna. The approach allowed two orthogonally polarized terahertz pulses to be recorded with good signal to noise (>1000:1) within half a second. We verified the capability of the spectrometer by characterizing a birefringent crystal and by imaging a polarization-sensitive metamaterial. This work has significant potential to improve the speed of terahertz polarization sensitive applications, such as ellipsometry and imaging.

Room-Temperature Plasmon-Assisted Resonant THz Detection in Single-Layer Graphene Transistors

Frequency-selective or even frequency-tunable terahertz (THz) photodevices are critical components for many technological applications that require nanoscale manipulation, control, and confinement of light. Within this context, gate-tunable phototransistors based on plasmonic resonances are often regarded as the most promising devices for the frequency-selective detection of THz radiation. The exploitation of constructive interference of plasma waves in such detectors promises not only frequency selectivity but also a pronounced sensitivity enhancement at target frequencies. However, clear signatures of plasmon-assisted resonances in THz detectors have been revealed only at cryogenic temperatures so far and remain unobserved at application-relevant room-temperature conditions. In this work, we demonstrate the sought-after room-temperature resonant detection of THz radiation in short-channel gated photodetectors made from high-quality single-layer graphene. The survival of this intriguing resonant regime at room temperature ultimately relies on the weak intrinsic electron-phonon scattering in monolayer graphene, which avoids the damping of the plasma oscillations present in the device channel.

Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires

Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing, spectroscopy and imaging technologies in the decades to come. THz emitters and receivers should thus be simplified in their design and miniaturized to become a commodity. In this work we demonstrate scalable photoconductive THz receivers based on horizontally-grown InAs nanowires (NWs) embedded in a bow-tie antenna that work at room temperature. The NWs provide a short photoconductivity lifetime while conserving high electron mobility. The large surface-to-volume ratio also ensures low dark current and thus low thermal noise, compared to narrow-bandgap bulk devices. By engineering the NW morphology, the NWs exhibit greatly different photoconductivity lifetimes, enabling the receivers to detect THz photons via both direct and integrating sampling modes. The broadband NW receivers are compatible with gating lasers across the entire range of telecom wavelengths (1.2-1.6 μm) and thus are ideal for inexpensive all-optical fibre-based THz time-domain spectroscopy and imaging systems. The devices are deterministically positioned by lithography and thus scalable to the wafer scale, opening the path for a new generation of commercial THz receivers.

Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires

Growing high-quality core-shell heterostructure nanowires is still challenging due to the lattice mismatch issue at the radial interface. Herein, a versatile strategy is exploited for the lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires by simply utilizing the surfactant and amorphous natures of chalcogenide semiconductors. Specifically, a variety of III-V/chalcogenide core-shell heterostructure nanowires are successfully constructed with controlled shell thicknesses, compositions, and smooth surfaces. Due to the conformal properties of obtained heterostructure nanowires, the wavelength-dependent bi-directional photoresponse and visible light-assisted infrared photodetection are realized in the type-I GaSb/GeS core-shell heterostructure nanowires. Also, the enhanced infrared photodetection is found in the type-II InGaAs/GeS core-shell heterostructure nanowires compared with the pristine InGaAs nanowires, in which both responsivity and detectivity are improved by more than 2 orders of magnitude. Evidently, this work paves the way for the lattice-mismatch-free construction of core-shell heterostructure nanowires by chemical vapor deposition for next-generation high-performance nanowire optoelectronics.

Thermally tunable Dyakonov surface waves in semiconductor nanowire metamaterials

The development of engineered metamaterials has enabled the fabrication of tunable photonic devices capable of manipulating the characteristics of electromagnetic surface waves. Integration of semiconductors in metamaterials is a proven approach for creating thermally tunable metamaterials through temperature control of the semiconductor carrier density. In this paper, an interface consisting of an isotropic dielectric material as a cover and an indium antimonide (InSb) nanowire metamaterial as a substrate, is theoretically introduced to investigate the propagation conditions of Dyakonov surface waves in terahertz (THz) frequencies. Various temperature-dependent properties of Dyakonov surface waves in such a geometry is studied, including allowed THz regions, angular existence domain, dispersion relation, directionality, localization degree and figure of merit. The proposed configuration due to the presence of significant birefringence in InSb nanowire metamaterial, has potential applications in THz sensing, imaging and spectroscopy.

Narrowband, Angle-Tunable, Helicity-Dependent Terahertz Emission from Nanowires of the Topological Dirac Semimetal Cd3As2

All-optical control of terahertz pulses is essential for the development of optoelectronic devices for next-generation quantum technologies. Despite substantial research in THz generation methods, polarization control remains difficult. Here, we demonstrate that by exploiting band structure topology, both helicity-dependent and helicity-independent THz emission can be generated from nanowires of the topological Dirac semimetal Cd₃As₂. We show that narrowband THz pulses can be generated at oblique incidence by driving the system with optical (1.55 eV) pulses with circular polarization. Varying the incident angle also provides control of the peak emission frequency, with peak frequencies spanning 0.21-1.40 THz as the angle is tuned from 15 to 45°. We therefore present Cd₃As₂ nanowires as a promising novel material platform for controllable terahertz emission.

Coulomb potential determining terahertz polarization in a two-color laser field

The orientation and ellipticity of terahertz (THz) polarization generated by a two-color strong field not only casts light on underlying mechanisms of laser-matter interaction, but also plays an important role for various applications. We develop the Coulomb-corrected classical trajectory Monte Carlo (CTMC) method to well reproduce the joint measurements, that the THz polarization generated by the linearly polarized 800 nm and circularly polarized 400 nm fields is independent on two-color phase delay. The trajectory analysis shows that the Coulomb potential twists the THz polarization by deflecting the orientation of asymptotic momentum of electron trajectories. Further, the CTMC calculations predict that, the two-color mid-infrared field can effectively accelerate the electron rapidly away from the parent core to relieve the disturbance of Coulomb potential, and simultaneously create large transverse acceleration of trajectories, leading to the circularly polarized THz radiation.

Subwavelength Terahertz Resonance Imaging (STRING) for Molecular Fingerprinting

Subwavelength terahertz (THz) imaging methods are highly desirable for biochemical sensing as well as materials sciences, yet sensitive spectral fingerprinting is still challenging in the frequency domain due to weak light-matter interactions. Here, we demonstrate subwavelength THz resonance imaging (STRING) that overcomes this limitation to achieve ultrasensitive molecular fingerprinting. STRING combines individual ring-shaped coaxial single resonators with near-field spectroscopy, yielding considerable sensitivity gains from both local field enhancement and the near-field effect. As an initial demonstration, we obtained spectral fingerprints from isomers of α-lactose and maltose monohydrates, achieving sensitivity that was enhanced by up to 10 orders of magnitude compared to far-field THz measurements with pelletized samples. Our results show that the STRING platform could enable the development of THz spectroscopy as a practical and sensitive tool for the fingerprinting and spectral imaging of molecules and nanoparticles.

A room-temperature polarization-sensitive CMOS terahertz camera based on quantum-dot-enhanced terahertz-to-visible photon upconversion

Detection of terahertz (THz) radiation has many potential applications, but presently available detectors are limited in many aspects of their performance, including sensitivity, speed, bandwidth and operating temperature. Most do not allow the characterization of THz polarization states. Recent observation of THz-driven luminescence in quantum dots offers a possible detection mechanism via field-driven interdot charge transfer. We demonstrate a room-temperature complementary metal-oxide-semiconductor THz camera and polarimeter based on quantum-dot-enhanced THz-to-visible upconversion mechanism with optimized luminophore geometries and fabrication designs. Besides broadband and fast responses, the nanoslit-based sensor can detect THz pulses with peak fields as low as 10 kV cm^-1. A related coaxial nanoaperture-type device shows a to-date-unexplored capability to simultaneously record the THz polarization state and field strength with similar sensitivity.

Automated Computer Vision-Enabled Manufacturing of Nanowire Devices

We present a high-throughput method for identifying and characterizing individual nanowires and for automatically designing electrode patterns with high alignment accuracy. Central to our method is an optimized machine-readable, lithographically processable, and multi-scale fiducial marker system─dubbed LithoTag─which provides nanostructure position determination at the nanometer scale. A grid of uniquely defined LithoTag markers patterned across a substrate enables image alignment and mapping in 100% of a set of >9000 scanning electron microscopy (SEM) images (>7 gigapixels). Combining this automated SEM imaging with a computer vision algorithm yields location and property data for individual nanowires. Starting with a random arrangement of individual InAs nanowires with diameters of 30 ± 5 nm on a single chip, we automatically design and fabricate >200 single-nanowire devices. For >75% of devices, the positioning accuracy of the fabricated electrodes is within 2 pixels of the original microscopy image resolution. The presented LithoTag method enables automation of nanodevice processing and is agnostic to microscopy modality and nanostructure type. Such high-throughput experimental methodology coupled with data-extensive science can help overcome the characterization bottleneck and improve the yield of nanodevice fabrication, driving the development and applications of nanostructured materials.

Monolithic Metamaterial-Integrated Graphene Terahertz Photodetector with Wavelength and Polarization Selectivity

The frequency spectra and polarization states of terahertz waves can convey significant information about physical interactions and material properties. Compact and miniaturized on-chip platforms for effective capturing of these quantities are being extensively investigated because of their promising potential for paramount applications of terahertz technology such as in situ sensing and characterization. Here, we present a metamaterial-graphene hybrid device that integrates the functions of photodetection, wavelength, and polarization selectivity into a monolithic architecture. Leveraging the ultrahigh design freedom of metamaterial optical properties and the electronically controllable hot-carrier-assisted photothermoelectric effect in graphene, our detector shows resonantly enhanced photoresponse at two specific target wavelengths with orthogonal polarizations. We demonstrate its versatile capabilities for spectrally selective and polarization resolved imaging on a single-chip platform that is free from advanced optical components. Our strategy is beneficial to the future development of multifunctional, compact, and low-cost terahertz sensors.

Colossal Room-Temperature Terahertz Topological Response in Type-II Weyl Semimetal NbIrTe4

The electromagnetic spectrum between microwave and infrared light is termed the "terahertz (THz) gap," of which there is an urgent lack of feasible and efficient room-temperature (RT) THz detectors. Type-II Weyl semimetals (WSMs) have been predicted to host significant RT topological photoresponses in low-frequency regions, especially in the THz gap, well addressing the shortcomings of THz detectors. However, such devices have not been experimentally realized yet. Herein, a type-II WSM (NbIrTe₄ ) is selected to fabricate THz detector, which exhibits a photoresponsivity of 5.7 × 10⁴  V W^-1 and a one-year air stability at RT. Such excellent THz-detection performance can be attributed to the topological effect of type-II WSM in which the effective mass of photogenerated electrons can be reduced by the large tilting angle of Weyl nodes to further improve mobility and photoresponsivity. Impressively, this device shows a giant intrinsic anisotropic conductance (σ_max /σ_min  = 339) and THz response (I_ph-max /I_ph-min  = 40.9), both of which are record values known. The findings open a new avenue for the realization of uncooled and highly sensitive THz detectors by exploring type-II WSM-based devices.

Near-IR Light-Tunable Omnidirectional Broadband Terahertz Wave Antireflection Based on a PEDOT:PSS/Graphene Hybrid Coating

Omnidirectional broadband terahertz (THz) antireflection (AR) with an actively configurable coating promises the achievement of next-generation efficient and versatile THz components with high performance. We demonstrate a near-infrared (NIR) light-tunable and omnidirectional broadband THz AR coating based on an impedance matching method and composed of a poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)/graphene composite film. The omnidirectional broadband properties of the active AR coating can be efficiently achieved by tunable NIR optical excitation of less than 0.27 W·cm^-2, which exhibits omnidirectional suppression of THz-wave reflection for incidence angles from 0 to 70°, concerning the broadband frequency range of 0.1-3.0 THz, with an ultrafast response time of ∼5 ps. Furthermore, we demonstrate that the active AR coating can improve the performance of a reflectance-tunable THz-wave polarization reflector by the elimination of Fabry-Pérot interference. The NIR irradiance-dependent active AR mechanism of the hybrid system is investigated, which demonstrates the essential role of the PEDOT:PSS/graphene layers in promoting the charge separation at the interface and therefore changing the photoconductivity of the composite film to achieve impedance matching under optical excitation. Several crucial advantages of the proposed and proven concept, including the wide-angle range, broad spectral range, flexible tunability, and easier fabrication, may revolutionize the AR strategy at THz frequencies for a wide range of THz applications.

Clinical trial and detection of SARS-CoV-2 by a commercial breath analysis test based on Terahertz technology

Public health threats such as the current COVID-19 pandemics have required prompt action by the local, national, and international authorities. Rapid and noninvasive diagnostic methods may provide on-site detection and immediate social isolation, used as tools to rapidly control virus spreading. Accordingly, the aim of the present study was to evaluate a commercial breath analysis test (TERA.Bio®) and deterministic algorithm for detecting the SARS-CoV-2 spectral signature of Volatile Organic Compounds present in exhaled air samples of suspicious persons from southern Brazil. A casuistic total of 70 infected and 500 non-infected patients were sampled, tested, and results later compared to RT-qPCR as gold standard. Overall, the test showed 92.6% sensitivity and 96.0% specificity. No statistical correlation was observed between SARS-CoV-2 positivity and infection by other respiratory diseases. Further studies should focus on infection monitoring among asymptomatic persons. In conclusion, the breath analysis test herein may be used as a fast, on-site, and easy-to-apply screening method for diagnosing COVID-19.

Polarization-sensitive terahertz time-domain spectroscopy system without mechanical moving parts

We report on the measurement of terahertz electric-field vector waveforms by using a system that contains no mechanical moving parts. It is known that two phase-locked femtosecond lasers with different repetition rates can be used to perform time-domain spectroscopy without using a mechanical delay stage. Furthermore, an electro-optic modulator can be used to perform polarization measurements without rotating any polarizers or waveplates. We experimentally demonstrate the combination of these two methods and explain the analysis of data obtained by such a system. Such a system provides a robust platform that can promote the usage of polarization-sensitive terahertz time-domain spectroscopy in basic science and practical applications. For the experimental demonstration, we alter the polarization of a terahertz wave with a polarizer.

Polarization-selective reconfigurability in hybridized-active-dielectric nanowires

Wavelength and polarization are two fundamental properties of light within which information can be encoded and (de)multiplexed. While wavelength-selective systems have widely proliferated, polarization-addressable active photonics has not seen notable progress, primarily because tunable and polarization-selective nanostructures have been elusive. Here, we introduce hybridized-active-dielectric (HAD) nanowires to achieve polarization-selective tunability. We then demonstrate the ability to use polarization as a parameter to selectively modulate the conductance of individual nanowires within a multi-nanowire system. By using polarization as the tunable vector, we show matrix-vector multiplication in a nanowire device configuration. While our HAD nanowires use phase-change materials as the active material, this concept is readily generalized to other active materials hybridized with dielectrics and thus has the potential in a broad range of applications from photonic memories and routing to polarization-multiplexed computing.

Broadband terahertz time-domain polarimetry based on air plasma filament emissions and spinning electro-optic sampling in GaP

We report on a time-domain polarimetry (TDP) system for generating and detecting broadband terahertz (THz) waves of different polarization angles. We generate THz waves from two-color laser filaments and determine their polarization states with a detection bandwidth of up to 8 THz using a spinning gallium phosphide crystal. The polarization of THz emission can be controlled by adjusting the position and tilt angle of the β-barium borate crystal. We characterize the precision of this system for polarimetric measurements at fixed time delay to be 1.6 ° and 1.9 ° for complete time-domain waveforms. We also demonstrate the feasibility of our TDP system by measuring broadband optical properties of anisotropic samples in both transmission and reflection geometries. The THz-TDP technique can be easily integrated in conventional THz time-domain spectroscopy setups using nonlinear crystal detectors.

Spintronic terahertz emission with manipulated polarization (STEMP)

Highly efficient generation and arbitrary manipulation of spin-polarized terahertz (THz) radiation will enable chiral lightwave driven quantum nonequilibrium state regulation, induce new electronic structures, consequently provide a powerful experimental tool for investigation of nonlinear THz optics and extreme THz science and applications. THz circular dichromic spectroscopy, ultrafast electron bunch manipulation, as well as THz imaging, sensing, and telecommunication, also need chiral THz waves. Here we review optical generation of circularly-polarized THz radiation but focus on recently emerged polarization tunable spintronic THz emission techniques, which possess many advantages of ultra-broadband, high efficiency, low cost, easy for integration and so on. We believe that chiral THz sources based on the combination of electron spin, ultrafast optical techniques and material structure engineering will accelerate the development of THz science and applications.

Generation and Control of Terahertz Spin Currents in Topology-Induced 2D Ferromagnetic Fe3 GeTe2 |Bi2 Te3 Heterostructures

Future information technologies for low-dissipation quantum computation, high-speed storage, and on-chip communication applications require the development of atomically thin, ultracompact, and ultrafast spintronic devices in which information is encoded, stored, and processed using electron spin. Exploring low-dimensional magnetic materials, designing novel heterostructures, and generating and controlling ultrafast electron spin in 2D magnetism at room temperature, preferably in the unprecedented terahertz (THz) regime, is in high demand. Using THz emission spectroscopy driven by femtosecond laser pulses, optical THz spin-current bursts at room temperature in the 2D van der Waals ferromagnetic Fe₃ GeTe₂ (FGT) integrated with Bi₂ Te₃ as a topological insulator are successfully realized. The symmetry of the THz radiation is effectively controlled by the optical pumping incidence and external magnetic field directions, indicating that the THz generation mechanism is the inverse Edelstein effect contributed spin-to-charge conversion. Thickness-, temperature-, and structure-dependent nontrivial THz transients reveal that topology-enhanced interlayer exchange coupling increases the FGT Curie temperature to room temperature, which provides an effective approach for engineering THz spin-current pulses. These results contribute to the goal of all-optical generation, manipulation, and detection of ultrafast THz spin currents in room-temperature 2D magnetism, accelerating the development of atomically thin high-speed spintronic devices.

Formation of magnetic nanowire arrays by cooperative lateral growth

Nanowires typically grow along their longitudinal axis, and the long-range order among wires sustains only when a template exists. Here, we report an unprecedented electrochemical growth of ordered metallic nanowire arrays from an ultrathin electrolyte layer, which is achieved by solidifying the electrolyte solution below the freezing temperature. The thickness of the electrodeposit is instantaneously tunable by the applied electric pulses, leading to parallel ridges on webbed film without using any template. An array of metallic nanowires with desired separation and width determined by the applied pulses is formed on the substrate with arbitrary surface patterns by etching away the webbed film thereafter. This work demonstrates a previously unrecognized fabrication strategy that bridges the gap of top-down lithography and bottom-up self-organization in making ordered metallic nanowire arrays over a large area with low cost.

Deep learning enhanced terahertz imaging of silkworm eggs development

Terahertz (THz) technology lays the foundation for next-generation high-speed wireless communication, nondestructive testing, food safety inspecting, and medical applications. When THz technology is integrated by artificial intelligence (AI), it is confidently expected that THz technology could be accelerated from the laboratory research stage to practical industrial applications. Employing THz video imaging, we can gain more insights into the internal morphology of silkworm egg. Deep learning algorithm combined with THz silkworm egg images, rapid recognition of the silkworm egg development stages is successfully demonstrated, with a recognition accuracy of ∼98.5%. Through the fusion of optical imaging and THz imaging, we further improve the AI recognition accuracy of silkworm egg development stages to ∼99.2%. The proposed THz imaging technology not only features the intrinsic THz imaging advantages, but also possesses AI merits of low time consuming and high recognition accuracy, which can be extended to other application scenarios.

A Review of THz Technologies for Rapid Sensing and Detection of Viruses including SARS-CoV-2

Virus epidemics such as Ebola virus, Zika virus, MERS-coronavirus, and others have wreaked havoc on humanity in the last decade. In addition, a coronavirus (SARS-CoV-2) pandemic and its continuously evolving mutants have become so deadly that they have forced the entire technical advancement of healthcare into peril. Traditional ways of detecting these viruses have been successful to some extent, but they are costly, time-consuming, and require specialized human resources. Terahertz-based biosensors have the potential to lead the way for low-cost, non-invasive, and rapid virus detection. This review explores the latest progresses in terahertz technology-based biosensors for the virus, viral particle, and antigen detection, as well as upcoming research directions in the field.

Measuring, controlling and exploiting heterogeneity in optoelectronic nanowires

Fabricated from ZnO, III-N, chalcogenide-based, III-V, hybrid perovskite or other materials, semiconductor nanowires offer single-element and array functionality as photovoltaic, non-linear, electroluminescent and lasing components. In many applications their advantageous properties emerge from their geometry; a high surface-to-volume ratio for facile access to carriers, wavelength-scale dimensions for waveguiding or a small nanowire-substrate footprint enabling heterogeneous growth. However, inhomogeneity during bottom-up growth is ubiquitous and can impact morphology, geometry, crystal structure, defect density, heterostructure dimensions and ultimately functional performance. In this topical review, we discuss the origin and impact of heterogeneity within and between optoelectronic nanowires, and introduce methods to assess, optimise and ultimately exploit wire-to-wire disorder.

Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

Growth of high-quality III-V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III-V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III-V nanowire growth studies provide an excellent example to guide the nanowire growth.

Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection

High-performance uncooled millimetre and terahertz wave detectors are required as a building block for a wide range of applications. The state-of-the-art technologies, however, are plagued by low sensitivity, narrow spectral bandwidth, and complicated architecture. Here, we report semiconductor surface plasmon enhanced high-performance broadband millimetre and terahertz wave detectors which are based on nanogroove InSb array epitaxially grown on GaAs substrate for room temperature operation. By making a nanogroove array in the grown InSb layer, strong millimetre and terahertz wave surface plasmon polaritons can be generated at the InSb-air interfaces, which results in significant improvement in detecting performance. A noise equivalent power (NEP) of 2.2 × 10^-14 W Hz^-1/2 or a detectivity (D^*) of 2.7 × 10¹² cm Hz^1/2 W^-1 at 1.75 mm (0.171 THz) is achieved at room temperature. By lowering the temperature to the thermoelectric cooling available 200 K, the corresponding NEP and D^* of the nanogroove device can be improved to 3.8 × 10^-15 W Hz^-1/2 and 1.6 × 10¹³ cm Hz^1/2 W^-1, respectively. In addition, such a single device can perform broad spectral band detection from 0.9 mm (0.330 THz) to 9.4 mm (0.032 THz). Fast responses of 3.5 µs and 780 ns are achieved at room temperature and 200 K, respectively. Such high-performance millimetre and terahertz wave photodetectors are useful for wide applications such as high capacity communications, walk-through security, biological diagnosis, spectroscopy, and remote sensing. In addition, the integration of plasmonic semiconductor nanostructures paves a way for realizing high performance and multifunctional long-wavelength optoelectrical devices.

Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires

The semiconductor nanowire architecture provides opportunities for non-planar electronics and optoelectronics arising from its unique geometry. This structure gives rise to a large surface area-to-volume ratio and therefore understanding the effect of nanowire surfaces on nanowire optoelectronic properties is necessary for engineering related devices. We present a systematic study of the non-uniform optical properties of Au-catalyzed GaAs/AlGaAs core–shell nanowires introduced by changes in the sidewall faceting. Significant variation in intra-wire photoluminescence (PL) intensity and PL lifetime (τ_PL) was observed along the nanowire axis, which was strongly correlated with the variation of sidewall facets from {112} to {110} from base to tip. Faster recombination occurred in the vicinity of {112}-oriented GaAs/AlGaAs interfaces. An alternative nanowire heterostructure, the radial quantum well tube consisting of a GaAs layer sandwiched between two AlGaAs barrier layers, is proposed and demonstrates superior uniformity of PL emission along the entire length of nanowires. The results emphasize the significance of nanowire facets and provide important insights for nanowire device design.

High-Throughput Electrical Characterization of Nanomaterials from Room to Cryogenic Temperatures

We present multiplexer methodology and hardware for nanoelectronic device characterization. This high-throughput and scalable approach to testing large arrays of nanodevices operates from room temperature to milli-Kelvin temperatures and is universally compatible with different materials and integration techniques. We demonstrate the applicability of our approach on two archetypal nanomaterials-graphene and semiconductor nanowires-integrated with a GaAs-based multiplexer using wet or dry transfer methods. A graphene film grown by chemical vapor deposition is transferred and patterned into an array of individual devices, achieving 94% yield. Device performance is evaluated using data fitting methods to obtain electrical transport metrics, showing mobilities comparable to nonmultiplexed devices fabricated on oxide substrates using wet transfer techniques. Separate arrays of indium-arsenide nanowires and micromechanically exfoliated monolayer graphene flakes are transferred using pick-and-place techniques. For the nanowire array mean values for mobility μ_FE = 880/3180 cm² V^-1 s^-1 (lower/upper bound), subthreshold swing 430 mV dec^-1, and on/off ratio 3.1 decades are extracted, similar to nonmultiplexed devices. In another array, eight mechanically exfoliated graphene flakes are transferred using techniques compatible with fabrication of two-dimensional superlattices, with 75% yield. Our results are a proof-of-concept demonstration of a versatile platform for scalable fabrication and cryogenic characterization of nanomaterial device arrays, which is compatible with a broad range of nanomaterials, transfer techniques, and device integration strategies from the forefront of quantum technology research.

Surface-States-Modulated High-Performance InAs Nanowire Phototransistor

We report a high-performance InAs nanowire phototransistor with the photoresponse mechanism governed by the gate-controlled surface states. Detailed characterizations suggest that the high density of surface defect states of the InAs nanowire can capture electrons from the nanowire core to form negative surface charge centers. Before and after light illumination, nanowire surface states undergo processes of capturing and neutralizing the electrons, respectively. This leads to an increase in the concentration and mobility of electrons after light illumination, which endows the device with remarkable photoresponsivity. After modulating the surface states through gate voltage and surface passivation, significantly high responsivity of up to 4.4 × 10³ A/W and gain of up to 2.7 × 10³ under the illumination of light at the wavelength of 2000 nm are obtained, putting our devices among the high-performance short-wave infrared nanowire photodetectors. This work provides an important reference for understanding the surface effects of nanomaterials and enhancing the performance of nanophotodetectors by modulating the surface states.