1
|
Delord T, Monge R, Meriles CA. Correlated Spectroscopy of Electric Noise with Color Center Clusters. NANO LETTERS 2024; 24:6474-6479. [PMID: 38767585 PMCID: PMC11157654 DOI: 10.1021/acs.nanolett.4c00222] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Revised: 05/11/2024] [Accepted: 05/13/2024] [Indexed: 05/22/2024]
Abstract
Experimental noise often contains information about the interactions of a system with its environment, but establishing a relation between the measured time fluctuations and the underlying physical observables is rarely apparent. Here, we leverage a multidimensional and multisensor analysis of spectral diffusion to investigate the dynamics of trapped carriers near subdiffraction clusters of nitrogen-vacancy (NV) centers in diamond. We establish statistical correlations in the spectral fluctuations we measure as we recursively probe the cluster optical resonances, which we then exploit to reveal proximal traps. Further, we deterministically induce Stark shifts in the cluster spectrum, ultimately allowing us to pinpoint the relative three-dimensional positions of interacting NVs as well as the location and charge sign of surrounding traps. Our results can be generalized to other color centers and provide opportunities for the characterization of photocarrier dynamics in semiconductors and the manipulation of nanoscale spin-qubit clusters connected via electric fields.
Collapse
Affiliation(s)
- Tom Delord
- Department
of Physics, CUNY-City College of New York, New York, New York 10031, United States
| | - Richard Monge
- Department
of Physics, CUNY-City College of New York, New York, New York 10031, United States
| | - Carlos A. Meriles
- Department
of Physics, CUNY-City College of New York, New York, New York 10031, United States
- CUNY-Graduate
Center, New York, New York 10016, United States
| |
Collapse
|
2
|
Liao M, Sun H, Koizumi S. High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2306013. [PMID: 38243629 PMCID: PMC10987156 DOI: 10.1002/advs.202306013] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2023] [Revised: 10/22/2023] [Indexed: 01/21/2024]
Abstract
Diamond holds the highest figure-of-merits among all the known semiconductors for next-generation electronic devices far beyond the performance of conventional semiconductor silicon. To realize diamond integrated circuits, both n- and p-channel conductivity are required for the development of diamond complementary metal-oxide-semiconductor (CMOS) devices, as those established for semiconductor silicon. However, diamond CMOS has never been achieved due to the challenge in n-type channel MOS field-effect transistors (MOSFETs). Here, electronic-grade phosphorus-doped n-type diamond epilayer with an atomically flat surface based on step-flow nucleation mode is fabricated. Consequently, n-channel diamond MOSFETs are demonstrated. The n-type diamond MOSFETs exhibit a high field-effect mobility around 150 cm2 V-1 s-1 at 573 K, which is the highest among all the n-channel MOSFETs based on wide-bandgap semiconductors. This work enables the development of energy-efficient and high-reliability CMOS integrated circuits for high-power electronics, integrated spintronics, and extreme sensors under harsh environments.
Collapse
Affiliation(s)
- Meiyong Liao
- Research Center for Electronic and Optical MaterialsNational Institute for Materials Science (NIMS)1‐1 NamikiTsukubaIbaraki3050044Japan
| | - Huanying Sun
- Research Center for Electronic and Optical MaterialsNational Institute for Materials Science (NIMS)1‐1 NamikiTsukubaIbaraki3050044Japan
- Beijing Academy of Quantum Information SciencesNo. 10 East Xibeiwang Road, HaidianBeijing100193China
| | - Satoshi Koizumi
- Research Center for Electronic and Optical MaterialsNational Institute for Materials Science (NIMS)1‐1 NamikiTsukubaIbaraki3050044Japan
| |
Collapse
|
3
|
Ocola PL, Dimitrova I, Grinkemeyer B, Guardado-Sanchez E, Đorđević T, Samutpraphoot P, Vuletić V, Lukin MD. Control and Entanglement of Individual Rydberg Atoms near a Nanoscale Device. PHYSICAL REVIEW LETTERS 2024; 132:113601. [PMID: 38563952 DOI: 10.1103/physrevlett.132.113601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2022] [Revised: 05/10/2023] [Accepted: 01/23/2024] [Indexed: 04/04/2024]
Abstract
Coherent control of Rydberg atoms near dielectric surfaces is a major challenge due to the large sensitivity of Rydberg states to electric fields. We demonstrate coherent single-atom operations and two-qubit entanglement as close as 100 μm from a nanophotonic device. Using the individual atom control enabled by optical tweezers to study the spatial and temporal properties of the electric field from the surface, we employ dynamical decoupling techniques to characterize and cancel the electric-field noise with submicrosecond temporal resolution. We further use entanglement-assisted sensing to accurately map magnitude and direction of electric-field gradients on a micrometer scale. Our observations open a path for integration of Rydberg arrays with micro- and nanoscale devices for applications in quantum networking and quantum information science.
Collapse
Affiliation(s)
- Paloma L Ocola
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
| | - Ivana Dimitrova
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
| | - Brandon Grinkemeyer
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
| | | | - Tamara Đorđević
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
| | | | - Vladan Vuletić
- Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Mikhail D Lukin
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
| |
Collapse
|
4
|
Rodgers LVH, Nguyen ST, Cox JH, Zervas K, Yuan Z, Sangtawesin S, Stacey A, Jaye C, Weiland C, Pershin A, Gali A, Thomsen L, Meynell SA, Hughes LB, Jayich ACB, Gui X, Cava RJ, Knowles RR, de Leon NP. Diamond surface functionalization via visible light-driven C-H activation for nanoscale quantum sensing. Proc Natl Acad Sci U S A 2024; 121:e2316032121. [PMID: 38451945 PMCID: PMC10945787 DOI: 10.1073/pnas.2316032121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/14/2023] [Accepted: 01/08/2024] [Indexed: 03/09/2024] Open
Abstract
Nitrogen-vacancy (NV) centers in diamond are a promising platform for nanoscale NMR sensing. Despite significant progress toward using NV centers to detect and localize nuclear spins down to the single spin level, NV-based spectroscopy of individual, intact, arbitrary target molecules remains elusive. Such sensing requires that target molecules are immobilized within nanometers of NV centers with long spin coherence. The inert nature of diamond typically requires harsh functionalization techniques such as thermal annealing or plasma processing, limiting the scope of functional groups that can be attached to the surface. Solution-phase chemical methods can be readily generalized to install diverse functional groups, but they have not been widely explored for single-crystal diamond surfaces. Moreover, realizing shallow NV centers with long spin coherence times requires highly ordered single-crystal surfaces, and solution-phase functionalization has not yet been shown with such demanding conditions. In this work, we report a versatile strategy to directly functionalize C-H bonds on single-crystal diamond surfaces under ambient conditions using visible light, forming C-F, C-Cl, C-S, and C-N bonds at the surface. This method is compatible with NV centers within 10 nm of the surface with spin coherence times comparable to the state of the art. As a proof-of-principle demonstration, we use shallow ensembles of NV centers to detect nuclear spins from surface-bound functional groups. Our approach to surface functionalization opens the door to deploying NV centers as a tool for chemical sensing and single-molecule spectroscopy.
Collapse
Affiliation(s)
- Lila V. H. Rodgers
- Department of Electrical and Computer Engineering, Princeton University, Princeton, NJ08540
| | - Suong T. Nguyen
- Department of Chemistry, Princeton University, Princeton, NJ08540
| | - James H. Cox
- Department of Chemistry, Princeton University, Princeton, NJ08540
| | - Kalliope Zervas
- Department of Electrical and Computer Engineering, Princeton University, Princeton, NJ08540
| | - Zhiyang Yuan
- Department of Electrical and Computer Engineering, Princeton University, Princeton, NJ08540
| | - Sorawis Sangtawesin
- School of Physics, Suranaree University of Technology, Nakhon Ratchasima30000, Thailand
- Center of Excellence in Advanced Functional Materials, Suranaree University of Technology, Nakhon Ratchasima30000, Thailand
| | - Alastair Stacey
- School of Physics, University of Melbourne, Parkville, VIC3010, Australia
- School of Science, RMIT University, Melbourne, VIC3000, Australia
| | - Cherno Jaye
- Materials Measurement Science Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD20899
| | - Conan Weiland
- Materials Measurement Science Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD20899
| | - Anton Pershin
- HUN-REN Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, BudapestH-1525, Hungary
- MTA-WFK Lendület “Momentum” Semiconductor Nanostructures Research Group, BudapestH-1525, Hungary
| | - Adam Gali
- HUN-REN Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, BudapestH-1525, Hungary
- MTA-WFK Lendület “Momentum” Semiconductor Nanostructures Research Group, BudapestH-1525, Hungary
- Department of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, BudapestH-1111, Hungary
| | - Lars Thomsen
- Australian Synchrotron, Australian Nuclear Science and Technology Organisation, Clayton, VIC3168, Australia
| | - Simon A. Meynell
- Physics Department, University of California, Santa Barbara, CA93106
| | - Lillian B. Hughes
- Materials Department, University of California, Santa Barbara, CA93106
| | | | - Xin Gui
- Department of Chemistry, Princeton University, Princeton, NJ08540
| | - Robert J. Cava
- Department of Chemistry, Princeton University, Princeton, NJ08540
| | | | - Nathalie P. de Leon
- Department of Electrical and Computer Engineering, Princeton University, Princeton, NJ08540
| |
Collapse
|
5
|
Giri R, Jensen RH, Khurana D, Bocquel J, Radko IP, Lang J, Osterkamp C, Jelezko F, Berg-So̷rensen K, Andersen UL, Huck A. Charge Stability and Charge-State-Based Spin Readout of Shallow Nitrogen-Vacancy Centers in Diamond. ACS APPLIED ELECTRONIC MATERIALS 2023; 5:6603-6610. [PMID: 38162528 PMCID: PMC10753810 DOI: 10.1021/acsaelm.3c01141] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/19/2023] [Revised: 11/10/2023] [Accepted: 11/12/2023] [Indexed: 01/03/2024]
Abstract
Spin-based applications of the negatively charged nitrogen-vacancy (NV) center in diamonds require an efficient spin readout. One approach is the spin-to-charge conversion (SCC), relying on mapping the spin states onto the neutral (NV0) and negative (NV-) charge states followed by a subsequent charge readout. With high charge-state stability, SCC enables extended measurement times, increasing precision and minimizing noise in the readout compared to the commonly used fluorescence detection. Nanoscale sensing applications, however, require shallow NV centers within a few nanometers distance from the surface where surface related effects might degrade the NV charge state. In this article, we investigate the charge state initialization and stability of single NV centers implanted ≈5 nm below the surface of a flat diamond plate. We demonstrate the SCC protocol on four shallow NV centers suitable for nanoscale sensing, obtaining a reduced readout noise of 5-6 times the spin-projection noise limit. We investigate the general applicability of the SCC for shallow NV centers and observe a correlation between the NV charge-state stability and readout noise. Coating the diamond with glycerol improves both the charge initialization and stability. Our results reveal the influence of the surface-related charge environment on the NV charge properties and motivate further investigations to functionalize the diamond surface with glycerol or other materials for charge-state stabilization and efficient spin-state readout of shallow NV centers suitable for nanoscale sensing.
Collapse
Affiliation(s)
- Rakshyakar Giri
- Center
for Macroscopic Quantum States (bigQ), Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Rasmus Ho̷y Jensen
- Center
for Macroscopic Quantum States (bigQ), Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Deepak Khurana
- Center
for Macroscopic Quantum States (bigQ), Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Juanita Bocquel
- Center
for Macroscopic Quantum States (bigQ), Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Ilya P. Radko
- Center
for Macroscopic Quantum States (bigQ), Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Johannes Lang
- Institute
for Quantum Optics and Center for Integrated Quantum Science and Technology
(IQST), Ulm University, Albert-Einstein-Allee 11, 89081 Ulm, Germany
| | - Christian Osterkamp
- Institute
for Quantum Optics and Center for Integrated Quantum Science and Technology
(IQST), Ulm University, Albert-Einstein-Allee 11, 89081 Ulm, Germany
| | - Fedor Jelezko
- Institute
for Quantum Optics and Center for Integrated Quantum Science and Technology
(IQST), Ulm University, Albert-Einstein-Allee 11, 89081 Ulm, Germany
| | | | - Ulrik L. Andersen
- Center
for Macroscopic Quantum States (bigQ), Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Alexander Huck
- Center
for Macroscopic Quantum States (bigQ), Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| |
Collapse
|
6
|
Zuber JA, Li M, Grimau Puigibert M, Happacher J, Reiser P, Shields BJ, Maletinsky P. Shallow Silicon Vacancy Centers with Lifetime-Limited Optical Linewidths in Diamond Nanostructures. NANO LETTERS 2023; 23:10901-10907. [PMID: 37989272 PMCID: PMC10722541 DOI: 10.1021/acs.nanolett.3c03145] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/20/2023] [Revised: 11/03/2023] [Accepted: 11/06/2023] [Indexed: 11/23/2023]
Abstract
The negatively charged silicon vacancy center (SiV-) in diamond is a promising, yet underexplored candidate for single-spin quantum sensing at sub-kelvin temperatures and tesla-range magnetic fields. A key ingredient for such applications is the ability to perform all-optical, coherent addressing of the electronic spin of near-surface SiV- centers. We present a robust and scalable approach for creating individual, ∼50 nm deep SiV- with lifetime-limited optical linewidths in diamond nanopillars through an easy-to-realize and persistent optical charge-stabilization scheme. The latter is based on single, prolonged 445 nm laser illumination that enables continuous photoluminescence excitation spectroscopy without the need for any further charge stabilization or repumping. Our results constitute a key step toward the use of near-surface, optically coherent SiV- for sensing under extreme conditions, and offer a powerful approach for stabilizing the charge-environment of diamond color centers for quantum technology applications.
Collapse
Affiliation(s)
- Josh A. Zuber
- Department
of Physics, University of Basel, CH-4056 Basel, Switzerland
- Swiss
Nanoscience Institute, University of Basel, CH-4056 Basel, Switzerland
| | - Minghao Li
- Department
of Physics, University of Basel, CH-4056 Basel, Switzerland
| | | | - Jodok Happacher
- Department
of Physics, University of Basel, CH-4056 Basel, Switzerland
| | - Patrick Reiser
- Department
of Physics, University of Basel, CH-4056 Basel, Switzerland
| | | | - Patrick Maletinsky
- Department
of Physics, University of Basel, CH-4056 Basel, Switzerland
- Swiss
Nanoscience Institute, University of Basel, CH-4056 Basel, Switzerland
| |
Collapse
|
7
|
Lau CS, Das S, Verzhbitskiy IA, Huang D, Zhang Y, Talha-Dean T, Fu W, Venkatakrishnarao D, Johnson Goh KE. Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications. ACS NANO 2023. [PMID: 37257134 DOI: 10.1021/acsnano.3c03455] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.
Collapse
Affiliation(s)
- Chit Siong Lau
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Sarthak Das
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ivan A Verzhbitskiy
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ding Huang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Yiyu Zhang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Teymour Talha-Dean
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics and Astronomy, Queen Mary University of London, London E1 4NS, United Kingdom
| | - Wei Fu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Dasari Venkatakrishnarao
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
| |
Collapse
|