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For: Chang KC, Chang TC, Tsai TM, Zhang R, Hung YC, Syu YE, Chang YF, Chen MC, Chu TJ, Chen HL, Pan CH, Shih CC, Zheng JC, Sze SM. Physical and chemical mechanisms in oxide-based resistance random access memory. Nanoscale Res Lett 2015;10:120. [PMID: 25873842 PMCID: PMC4388104 DOI: 10.1186/s11671-015-0740-7] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2014] [Accepted: 01/07/2015] [Indexed: 05/31/2023]
Number Cited by Other Article(s)
1
Martinez A, Cho BJ, Kim MJ. A non-invasive approach to the resistive switching physical model of ultra-thin organic-inorganic dielectric-based ReRAMs. NANOSCALE 2023;15:18794-18805. [PMID: 37960930 DOI: 10.1039/d3nr04682f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/15/2023]
2
Ismail M, Mahata C, Kang M, Kim S. SnO2-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing. NANOMATERIALS (BASEL, SWITZERLAND) 2023;13:2603. [PMID: 37764635 PMCID: PMC10535130 DOI: 10.3390/nano13182603] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Revised: 09/19/2023] [Accepted: 09/19/2023] [Indexed: 09/29/2023]
3
Chen KH, Cheng CM, Wang NF, Kao MC. Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices. NANOMATERIALS (BASEL, SWITZERLAND) 2023;13:2179. [PMID: 37570498 PMCID: PMC10421286 DOI: 10.3390/nano13152179] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/25/2023] [Revised: 07/19/2023] [Accepted: 07/24/2023] [Indexed: 08/13/2023]
4
A Switched Capacitor Memristor Emulator Using Stochastic Computing. TECHNOLOGIES 2022. [DOI: 10.3390/technologies10020039] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
5
Li L, Dai T, Liu K, Chang KC, Zhang R, Lin X, Liu HJ, Lai YC, Kuo TP. Achieving complementary resistive switching and multi-bit storage goals by modulating the dual-ion reaction through supercritical fluid-assisted ammoniation. NANOSCALE 2021;13:14035-14040. [PMID: 34477684 DOI: 10.1039/d1nr03356e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
6
Chang KC, Dai T, Li L, Lin X, Zhang S, Lai YC, Liu HJ, Syu YE. Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory. NANOSCALE 2020;12:22070-22074. [PMID: 33030167 DOI: 10.1039/d0nr05900e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
7
Rediscovering Majority Logic in the Post-CMOS Era: A Perspective from In-Memory Computing. JOURNAL OF LOW POWER ELECTRONICS AND APPLICATIONS 2020. [DOI: 10.3390/jlpea10030028] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
8
Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure. COATINGS 2020. [DOI: 10.3390/coatings10080765] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
9
Li L, Chang KC, Lin X, Lai YC, Zhang R, Kuo TP. Variable-temperature activation energy extraction to clarify the physical and chemical mechanisms of the resistive switching process. NANOSCALE 2020;12:15721-15724. [PMID: 32677652 DOI: 10.1039/d0nr04053c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
10
Alialy S, Esteki K, Ferreira MS, Boland JJ, Gomes da Rocha C. Nonlinear ion drift-diffusion memristance description of TiO2 RRAM devices. NANOSCALE ADVANCES 2020;2:2514-2524. [PMID: 36133364 PMCID: PMC9419089 DOI: 10.1039/d0na00195c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/07/2020] [Accepted: 04/20/2020] [Indexed: 06/16/2023]
11
Self-Compliance and High Performance Pt/HfOx/Ti RRAM Achieved through Annealing. NANOMATERIALS 2020;10:nano10030457. [PMID: 32143299 PMCID: PMC7153612 DOI: 10.3390/nano10030457] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/26/2020] [Revised: 02/19/2020] [Accepted: 02/28/2020] [Indexed: 12/02/2022]
12
Sun WJ, Zhao YY, Cheng XF, He JH, Lu JM. Surface Functionalization of Single-Layered Ti3C2Tx MXene and Its Application in Multilevel Resistive Memory. ACS APPLIED MATERIALS & INTERFACES 2020;12:9865-9871. [PMID: 32009386 DOI: 10.1021/acsami.9b16979] [Citation(s) in RCA: 25] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
13
Li L, Chang KC, Ye C, Lin X, Zhang R, Xu Z, Zhou Y, Xiong W, Kuo TP. An indirect way to achieve comprehensive performance improvement of resistive memory: when hafnium meets ITO in an electrode. NANOSCALE 2020;12:3267-3272. [PMID: 31971203 DOI: 10.1039/c9nr08943h] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
14
Kim T, Kim Y, Lee I, Lee D, Sohn H. Ovonic threshold switching in polycrystalline zinc telluride thin films deposited by RF sputtering. NANOTECHNOLOGY 2019;30:13LT01. [PMID: 30641500 DOI: 10.1088/1361-6528/aafe13] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
15
Kim S, Chen J, Chen YC, Kim MH, Kim H, Kwon MW, Hwang S, Ismail M, Li Y, Miao XS, Chang YF, Park BG. Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching. NANOSCALE 2018;11:237-245. [PMID: 30534752 DOI: 10.1039/c8nr06694a] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
16
Wang L, Ren W, Wen J, Xiong B. Overview of Phase-Change Electrical Probe Memory. NANOMATERIALS (BASEL, SWITZERLAND) 2018;8:E772. [PMID: 30274283 PMCID: PMC6215280 DOI: 10.3390/nano8100772] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/10/2018] [Revised: 09/18/2018] [Accepted: 09/27/2018] [Indexed: 12/03/2022]
17
Ye Y, Zhao J, Xiao L, Cheng B, Xiao Y, Lei S. Reversible Negative Resistive Switching in an Individual Fe@Al2O3 Hybrid Nanotube for Nonvolatile Memory. ACS APPLIED MATERIALS & INTERFACES 2018;10:19002-19009. [PMID: 29747500 DOI: 10.1021/acsami.8b01153] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
18
A Survey of ReRAM-Based Architectures for Processing-In-Memory and Neural Networks. MACHINE LEARNING AND KNOWLEDGE EXTRACTION 2018. [DOI: 10.3390/make1010005] [Citation(s) in RCA: 71] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
19
Gritsenko VA, Perevalov TV, Voronkovskii VA, Gismatulin AA, Kruchinin VN, Aliev VS, Pustovarov VA, Prosvirin IP, Roizin Y. Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide. ACS APPLIED MATERIALS & INTERFACES 2018;10:3769-3775. [PMID: 29308879 DOI: 10.1021/acsami.7b16753] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
20
Shan Y, Lyu Z, Guan X, Younis A, Yuan G, Wang J, Li S, Wu T. Solution-processed resistive switching memory devices based on hybrid organic–inorganic materials and composites. Phys Chem Chem Phys 2018;20:23837-23846. [DOI: 10.1039/c8cp03945c] [Citation(s) in RCA: 58] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
21
Li L, Liu Y, Teng J, Long S, Guo Q, Zhang M, Wu Y, Yu G, Liu Q, Lv H, Liu M. Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory. NANOSCALE RESEARCH LETTERS 2017;12:210. [PMID: 28335585 PMCID: PMC5362562 DOI: 10.1186/s11671-017-1983-2] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/29/2016] [Accepted: 03/06/2017] [Indexed: 06/01/2023]
22
Yuan FY, Deng N, Shih CC, Tseng YT, Chang TC, Chang KC, Wang MH, Chen WC, Zheng HX, Wu H, Qian H, Sze SM. Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment. NANOSCALE RESEARCH LETTERS 2017;12:574. [PMID: 29075921 PMCID: PMC5658308 DOI: 10.1186/s11671-017-2330-3] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/26/2017] [Accepted: 09/26/2017] [Indexed: 06/07/2023]
23
Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe2O4 Thin Film. Sci Rep 2017;7:12427. [PMID: 28963521 PMCID: PMC5622061 DOI: 10.1038/s41598-017-12579-x] [Citation(s) in RCA: 46] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2017] [Accepted: 08/31/2017] [Indexed: 12/03/2022]  Open
24
Ávila-Niño JA, Reyes-Reyes M, López-Sandoval R. Study of the presence of spherical deformations on the Al top electrode due to electroforming in rewritable organic resistive memories. Phys Chem Chem Phys 2017;19:25691-25696. [PMID: 28906515 DOI: 10.1039/c7cp04975g] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
25
Li Y, Long S, Liu Q, Lv H, Liu M. Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017;13:1604306. [PMID: 28417548 DOI: 10.1002/smll.201604306] [Citation(s) in RCA: 51] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/30/2016] [Revised: 01/29/2017] [Indexed: 06/07/2023]
26
Dongale TD, Khot KV, Mohite SV, Desai ND, Shinde SS, Patil VL, Vanalkar SA, Moholkar AV, Rajpure KY, Bhosale PN, Patil PS, Gaikwad PK, Kamat RK. Effect of write voltage and frequency on the reliability aspects of memristor-based RRAM. INTERNATIONAL NANO LETTERS 2017. [DOI: 10.1007/s40089-017-0217-z] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2022]
27
Wang C, He W, Tong Y, Zhang Y, Huang K, Song L, Zhong S, Ganeshkumar R, Zhao R. Memristive Devices with Highly Repeatable Analog States Boosted by Graphene Quantum Dots. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017;13:1603435. [PMID: 28296020 DOI: 10.1002/smll.201603435] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2016] [Revised: 01/30/2017] [Indexed: 06/06/2023]
28
Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory. MATERIALS 2017;10:ma10050459. [PMID: 28772819 PMCID: PMC5459000 DOI: 10.3390/ma10050459] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/20/2017] [Revised: 04/22/2017] [Accepted: 04/25/2017] [Indexed: 12/13/2022]
29
Naito T. Development of a Control Method for Conduction and Magnetism in Molecular Crystals. BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN 2017. [DOI: 10.1246/bcsj.20160295] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/23/2023]
30
Chen PH, Chang TC, Chang KC, Tsai TM, Pan CH, Chen MC, Su YT, Lin CY, Tseng YT, Huang HC, Wu H, Deng N, Qian H, Sze SM. Resistance Switching Characteristics Induced by O2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory. ACS APPLIED MATERIALS & INTERFACES 2017;9:3149-3155. [PMID: 28072511 DOI: 10.1021/acsami.6b14282] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
31
Chen YC, Chang YF, Wu X, Zhou F, Guo M, Lin CY, Hsieh CC, Fowler B, Chang TC, Lee JC. Dynamic conductance characteristics in HfOx-based resistive random access memory. RSC Adv 2017. [DOI: 10.1039/c7ra00567a] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]  Open
32
Kim S, Chang YF, Park BG. Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices. RSC Adv 2017. [DOI: 10.1039/c6ra28477a] [Citation(s) in RCA: 42] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]  Open
33
Kim S, Chang YF, Kim MH, Bang S, Kim TH, Chen YC, Lee JH, Park BG. Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device. Phys Chem Chem Phys 2017;19:18988-18995. [DOI: 10.1039/c7cp03120c] [Citation(s) in RCA: 25] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
34
Liu S, Zhao X, Li Q, Li N, Wang W, Liu Q, Xu H. Analysis of the Negative-SET Behaviors in Cu/ZrO2/Pt Devices. NANOSCALE RESEARCH LETTERS 2016;11:542. [PMID: 27924625 PMCID: PMC5142190 DOI: 10.1186/s11671-016-1762-5] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2016] [Accepted: 11/29/2016] [Indexed: 05/26/2023]
35
Chen HR, Chen YC, Chang TC, Chang KC, Tsai TM, Chu TJ, Shih CC, Chuang NC, Wang KY. Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications. NANOSCALE RESEARCH LETTERS 2016;11:275. [PMID: 27251325 PMCID: PMC4889533 DOI: 10.1186/s11671-016-1480-z] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/22/2016] [Accepted: 05/12/2016] [Indexed: 06/05/2023]
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