1
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Yu Y, Liu S, Lee CM, Michler P, Reitzenstein S, Srinivasan K, Waks E, Liu J. Telecom-band quantum dot technologies for long-distance quantum networks. NATURE NANOTECHNOLOGY 2023; 18:1389-1400. [PMID: 38049595 DOI: 10.1038/s41565-023-01528-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2022] [Accepted: 09/15/2023] [Indexed: 12/06/2023]
Abstract
A future quantum internet is expected to generate, distribute, store and process quantum bits (qubits) over the world by linking different quantum nodes via quantum states of light. To facilitate long-haul operations, quantum repeaters must operate at telecom wavelengths to take advantage of both the low-loss optical fibre network and the established technologies of modern optical communications. Semiconductor quantum dots have thus far shown exceptional performance as key elements for quantum repeaters, such as quantum light sources and spin-photon interfaces, but only in the near-infrared regime. Therefore, the development of high-performance telecom-band quantum dot devices is highly desirable for a future solid-state quantum internet based on fibre networks. In this Review, we present the physics and technological developments towards epitaxial quantum dot devices emitting in the telecom O- and C-bands for quantum networks, considering both advanced epitaxial growth for direct telecom emission and quantum frequency conversion for telecom-band down-conversion of near-infrared quantum dot devices. We also discuss the challenges and opportunities for future realization of telecom quantum dot devices with improved performance and expanded functionality through hybrid integration.
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Affiliation(s)
- Ying Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, School of Physics, Sun Yat-sen University, Guangzhou, China
| | - Shunfa Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, School of Physics, Sun Yat-sen University, Guangzhou, China
| | - Chang-Min Lee
- Department of Electrical and Computer Engineering and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, USA
| | - Peter Michler
- Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG), Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Stuttgart, Germany
| | - Stephan Reitzenstein
- Institute of Solid State Physics, Technische Universität Berlin, Berlin, Germany
| | - Kartik Srinivasan
- Joint Quantum Institute, NIST/University of Maryland, College Park, MD, USA
- Microsystems and Nanotechnology Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, USA
| | - Edo Waks
- Department of Electrical and Computer Engineering and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, USA
- Joint Quantum Institute, NIST/University of Maryland, College Park, MD, USA
| | - Jin Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, School of Physics, Sun Yat-sen University, Guangzhou, China.
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2
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Laferriére P, Haffouz S, Northeast DB, Poole PJ, Williams RL, Dalacu D. Position-Controlled Telecom Single Photon Emitters Operating at Elevated Temperatures. NANO LETTERS 2023; 23:962-968. [PMID: 36706023 PMCID: PMC9912373 DOI: 10.1021/acs.nanolett.2c04375] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/07/2022] [Revised: 01/25/2023] [Indexed: 06/18/2023]
Abstract
A key resource in quantum-secured communication protocols are single photon emitters. For long-haul optical networks, it is imperative to use photons at wavelengths compatible with telecom single mode fibers. We demonstrate high purity single photon emission at 1.31 μm using deterministically positioned InP photonic waveguide nanowires containing single InAsP quantum dot-in-a-rod structures. At excitation rates that saturate the emission, we obtain a single photon collection efficiency at first lens of 27.6% and a probability of multiphoton emission of g(2)(0) = 0.021. We have also evaluated the performance of the source as a function of temperature. Multiphoton emission probability increases with temperature with values of 0.11, 0.34, and 0.57 at 77, 220 and 300 K, respectively, which is attributed to an overlap of temperature-broadened excitonic emission lines. These results are a promising step toward scalably fabricating telecom single photon emitters that operate under relaxed cooling requirements.
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Affiliation(s)
- Patrick Laferriére
- National
Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
- University
of Ottawa, Ottawa, Ontario, Canada K1N 6N5
| | - Sofiane Haffouz
- National
Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
| | | | - Philip J. Poole
- National
Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
| | - Robin L. Williams
- National
Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
| | - Dan Dalacu
- National
Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
- University
of Ottawa, Ottawa, Ontario, Canada K1N 6N5
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3
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Smołka T, Posmyk K, Wasiluk M, Wyborski P, Gawełczyk M, Mrowiński P, Mikulicz M, Zielińska A, Reithmaier JP, Musiał A, Benyoucef M. Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy. MATERIALS (BASEL, SWITZERLAND) 2021; 14:6270. [PMID: 34771794 PMCID: PMC8585182 DOI: 10.3390/ma14216270] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/17/2021] [Revised: 10/09/2021] [Accepted: 10/18/2021] [Indexed: 11/23/2022]
Abstract
We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique properties, i.e., low spatial density and in-plane shape symmetry. These are advantageous for non-classical light generation for quantum technologies applications. As a measure of the internal quantum efficiency, the discrepancy between calculated and experimentally determined photon extraction efficiency is used. The investigated nanostructures exhibit close to ideal emission efficiency proving their high structural quality. The thermal stability of emission is investigated by means of microphotoluminescence. This allows to determine the maximal operation temperature of the device and reveal the main emission quenching channels. Emission quenching is predominantly caused by the transition of holes and electrons to higher QD's levels. Additionally, these carriers could further leave the confinement potential via the dense ladder of QD states. Single QD emission is observed up to temperatures of about 100 K, comparable to the best results obtained for epitaxial QDs in this spectral range. The fundamental limit for the emission rate is the excitation radiative lifetime, which spreads from below 0.5 to almost 1.9 ns (GHz operation) without any clear spectral dispersion. Furthermore, carrier dynamics is also determined using time-correlated single-photon counting.
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Affiliation(s)
- Tristan Smołka
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (T.S.); (K.P.); (M.W.); (P.W.); (P.M.); (M.M.); (A.Z.)
| | - Katarzyna Posmyk
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (T.S.); (K.P.); (M.W.); (P.W.); (P.M.); (M.M.); (A.Z.)
| | - Maja Wasiluk
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (T.S.); (K.P.); (M.W.); (P.W.); (P.M.); (M.M.); (A.Z.)
| | - Paweł Wyborski
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (T.S.); (K.P.); (M.W.); (P.W.); (P.M.); (M.M.); (A.Z.)
| | - Michał Gawełczyk
- Department of Theoretical Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland;
- Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University in Toruń, ul. Grudziądzka 5, 87-100 Toruń, Poland
| | - Paweł Mrowiński
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (T.S.); (K.P.); (M.W.); (P.W.); (P.M.); (M.M.); (A.Z.)
| | - Monika Mikulicz
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (T.S.); (K.P.); (M.W.); (P.W.); (P.M.); (M.M.); (A.Z.)
| | - Agata Zielińska
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (T.S.); (K.P.); (M.W.); (P.W.); (P.M.); (M.M.); (A.Z.)
| | - Johann Peter Reithmaier
- Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), Institute of Nanostructure Technologies and Analytics (INA), University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany;
| | - Anna Musiał
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (T.S.); (K.P.); (M.W.); (P.W.); (P.M.); (M.M.); (A.Z.)
| | - Mohamed Benyoucef
- Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), Institute of Nanostructure Technologies and Analytics (INA), University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany;
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4
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Kolatschek S, Nawrath C, Bauer S, Huang J, Fischer J, Sittig R, Jetter M, Portalupi SL, Michler P. Bright Purcell Enhanced Single-Photon Source in the Telecom O-Band Based on a Quantum Dot in a Circular Bragg Grating. NANO LETTERS 2021; 21:7740-7745. [PMID: 34478316 DOI: 10.1021/acs.nanolett.1c02647] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The combination of semiconductor quantum dots with photonic cavities is a promising way to realize nonclassical light sources with state-of-the-art performances regarding brightness, indistinguishability, and repetition rate. Here we demonstrate the coupling of InGaAs/GaAs QDs emitting in the telecom O-band to a circular Bragg grating cavity. We demonstrate a broadband geometric extraction efficiency enhancement by investigating two emission lines under above-band excitation, inside and detuned from the cavity mode, respectively. In the first case, a Purcell enhancement of 4 is attained. For the latter case, an end-to-end brightness of 1.4% with a brightness at the first lens of 23% is achieved. Using p-shell pumping, a combination of high count rate with pure single-photon emission (g(2)(0) = 0.01 in saturation) is achieved. Finally, a good single-photon purity (g(2)(0) = 0.13) together with a high detector count rate of 191 kcps is demonstrated for a temperature of up to 77 K.
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Affiliation(s)
- Sascha Kolatschek
- Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG), Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
| | - Cornelius Nawrath
- Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG), Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
| | - Stephanie Bauer
- Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG), Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
| | - Jiasheng Huang
- Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG), Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
| | - Julius Fischer
- Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG), Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
| | - Robert Sittig
- Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG), Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
| | - Michael Jetter
- Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG), Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
| | - Simone Luca Portalupi
- Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG), Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
| | - Peter Michler
- Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG), Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
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5
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Blokhin SA, Bobrov MA, Maleev NA, Donges JN, Bremer L, Blokhin AA, Vasil'ev AP, Kuzmenkov AG, Kolodeznyi ES, Shchukin VA, Ledentsov NN, Reitzenstein S, Ustinov VM. Design optimization for bright electrically-driven quantum dot single-photon sources emitting in telecom O-band. OPTICS EXPRESS 2021; 29:6582-6598. [PMID: 33726176 DOI: 10.1364/oe.415979] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2020] [Accepted: 02/08/2021] [Indexed: 06/12/2023]
Abstract
A combination of advanced light engineering concepts enables a substantial improvement in photon extraction efficiency of micro-cavity-based single-photon sources in the telecom O-band at ∼1.3 µm. We employ a broadband bottom distributed Bragg reflector (DBR) and a top DBR formed in a dielectric micropillar with an additional circular Bragg grating in the lateral plane. This device design includes a doped layer in pin-configuration to allow for electric carrier injection. It provides broadband (∼8-10 nm) emission enhancement with an overall photon-extraction efficiency of ∼83% into the upper hemisphere and photon-extraction efficiency of ∼79% within numerical aperture NA=0.7. The efficiency of photon coupling to a single-mode fiber reaches 11% for SMF28 fiber (with NA=0.12), exceeds 22% for 980HP fiber (with NA=0.2) and reaches ∼40% for HNA fiber (with NA=0.42) as demonstrated by 3D finite-difference time-domain modeling.
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6
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Wyborski P, Musiał A, Mrowiński P, Podemski P, Baumann V, Wroński P, Jabeen F, Höfling S, Sęk G. InP-Substrate-Based Quantum Dashes on a DBR as Single-Photon Emitters at the Third Telecommunication Window. MATERIALS (BASEL, SWITZERLAND) 2021; 14:759. [PMID: 33562831 PMCID: PMC7915660 DOI: 10.3390/ma14040759] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/07/2021] [Revised: 01/30/2021] [Accepted: 02/01/2021] [Indexed: 11/16/2022]
Abstract
We investigated emission properties of photonic structures with InAs/InGaAlAs/InP quantum dashes grown by molecular beam epitaxy on a distributed Bragg reflector. In high-spatial-resolution photoluminescence experiment, well-resolved sharp spectral lines are observed and single-photon emission is detected in the third telecommunication window characterized by very low multiphoton events probabilities. The photoluminescence spectra measured on simple photonic structures in the form of cylindrical mesas reveal significant intensity enhancement by a factor of 4 when compared to a planar sample. These results are supported by simulations of the electromagnetic field distribution, which show emission extraction efficiencies even above 18% for optimized designs. When combined with relatively simple and undemanding fabrication approach, it makes this kind of structures competitive with the existing solutions in that spectral range and prospective in the context of efficient and practical single-photon sources for fiber-based quantum networks applications.
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Affiliation(s)
- Paweł Wyborski
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (A.M.); (P.M.); (P.P.); (G.S.)
| | - Anna Musiał
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (A.M.); (P.M.); (P.P.); (G.S.)
| | - Paweł Mrowiński
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (A.M.); (P.M.); (P.P.); (G.S.)
| | - Paweł Podemski
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (A.M.); (P.M.); (P.P.); (G.S.)
| | - Vasilij Baumann
- Technische Physik, University of Würzburg and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany; (V.B.); (P.W.); (F.J.); (S.H.)
| | - Piotr Wroński
- Technische Physik, University of Würzburg and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany; (V.B.); (P.W.); (F.J.); (S.H.)
| | - Fauzia Jabeen
- Technische Physik, University of Würzburg and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany; (V.B.); (P.W.); (F.J.); (S.H.)
- Faculty of Engineering and Physical Sciences, University of Southampton, Southampton SO17 1BJ, UK
| | - Sven Höfling
- Technische Physik, University of Würzburg and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany; (V.B.); (P.W.); (F.J.); (S.H.)
- School of Physics and Astronomy, University of St. Andrews, North Haugh, St. Andrews KY16 9SS, UK
| | - Grzegorz Sęk
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (A.M.); (P.M.); (P.P.); (G.S.)
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7
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Li S, Chen Y, Shang X, Yu Y, Yang J, Huang J, Su X, Shen J, Sun B, Ni H, Su X, Wang K, Niu Z. Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode. NANOSCALE RESEARCH LETTERS 2020; 15:145. [PMID: 32648067 PMCID: PMC7347735 DOI: 10.1186/s11671-020-03358-1] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/14/2020] [Accepted: 05/27/2020] [Indexed: 06/11/2023]
Abstract
We proposed a precise calibration process of Al 0.9Ga0.1As/GaAs DBR micropillar cavity to match the single InAs/GaAs quantum dot (QD) exciton emission and achieve cavity mode resonance and a great enhancement of QD photoluminescence (PL) intensity. Light-matter interaction of single QD in DBR micropillar cavity (Q ∼ 3800) under weak coupling regime was investigated by temperature-tuned PL spectra; a pronounced enhancement (14.6-fold) of QD exciton emission was observed on resonance. The second-order autocorrelation measurement shows g(2)(0)=0.070, and the estimated net count rate before the first objective lens reaches 1.6×107 counts/s under continuous wave excitation, indicating highly pure single-photon emission at high count rates.
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Affiliation(s)
- Shulun Li
- State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing, 100083 China
- Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing, 100049 China
- Beijing Academy of Quantum Information Sciences, Beijing, 100193 China
| | - Yao Chen
- State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing, 100083 China
- Institute of Photonics and Photonic Technology, Northwest University, Xian, 710127 China
| | - Xiangjun Shang
- State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing, 100083 China
| | - Ying Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 China
| | - Jiawei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 China
| | - Junhui Huang
- State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing, 100083 China
- Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Xiangbin Su
- State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing, 100083 China
| | - Jiaxin Shen
- State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing, 100083 China
- School of Microelectronics, Xidian University and The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xian, 710071 China
| | - Baoquan Sun
- State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing, 100083 China
- Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Haiqiao Ni
- State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing, 100083 China
- Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing, 100049 China
- Beijing Academy of Quantum Information Sciences, Beijing, 100193 China
| | - Xingliang Su
- Laboratory of Solid Quantum Material Center, College of Physics and Electronic Engineering, Shanxi University, Taiyuan, 030006 China
| | - Kaiyou Wang
- State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing, 100083 China
- Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing, 100049 China
- Beijing Academy of Quantum Information Sciences, Beijing, 100193 China
| | - Zhichuan Niu
- State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing, 100083 China
- Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing, 100049 China
- Beijing Academy of Quantum Information Sciences, Beijing, 100193 China
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8
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Yang J, Nawrath C, Keil R, Joos R, Zhang X, Höfer B, Chen Y, Zopf M, Jetter M, Luca Portalupi S, Ding F, Michler P, Schmidt OG. Quantum dot-based broadband optical antenna for efficient extraction of single photons in the telecom O-band. OPTICS EXPRESS 2020; 28:19457-19468. [PMID: 32672222 DOI: 10.1364/oe.395367] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2020] [Accepted: 05/24/2020] [Indexed: 06/11/2023]
Abstract
Long-distance fiber-based quantum communication relies on efficient non-classical light sources operating at telecommunication wavelengths. Semiconductor quantum dots are promising candidates for on-demand generation of single photons and entangled photon pairs for such applications. However, their brightness is strongly limited due to total internal reflection at the semiconductor/vacuum interface. Here we overcome this limitation using a dielectric antenna structure. The non-classical light source consists of a gallium phosphide solid immersion lens in combination with a quantum dot nanomembrane emitting single photons in the telecom O-band. With this device, the photon extraction is strongly increased in a broad spectral range. A brightness of 17% (numerical aperture of 0.6) is obtained experimentally, with a single photon purity of g(2)(0)=0.049±0.02 at saturation power. This brings the practical implementation of quantum communication networks one step closer.
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9
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Jaffal A, Redjem W, Regreny P, Nguyen HS, Cueff S, Letartre X, Patriarche G, Rousseau E, Cassabois G, Gendry M, Chauvin N. InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon. NANOSCALE 2019; 11:21847-21855. [PMID: 31696191 DOI: 10.1039/c9nr06114b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secure communications over long distances. In this work, we propose the monolithic growth of needlelike tapered InAs/InP quantum dot-nanowires (QD-NWs) on silicon substrates with a small taper angle and a nanowire diameter tailored to support a single mode waveguide. Such a NW geometry is obtained by a controlled balance over axial and radial growths during the gold-catalyzed growth of the NWs by molecular beam epitaxy. This allows us to investigate the impact of the taper angle on the emission properties of a single InAs/InP QD-NW. At room temperature, a Gaussian far-field emission profile in the telecom O-band with a beam divergence angle θ = 30° is demonstrated using a single InAs QD embedded in a 2° tapered InP NW. Moreover, single photon emission is observed at cryogenic temperature for an off-resonant excitation and the best result, g2(0) = 0.05, is obtained for a 7° tapered NW. This all-encompassing study paves the way for the monolithic growth on silicon of an efficient single photon source in the telecom band based on InAs/InP QD-NWs.
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Affiliation(s)
- Ali Jaffal
- Université de Lyon, Institut des Nanotechnologies de Lyon, UMR 5270 CNRS, INSA de Lyon, 7 avenue Jean Capelle, 69621 Villeurbanne cedex, France.
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10
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Rakhlin MV, Belyaev KG, Klimko GV, Mukhin IS, Kirilenko DA, Shubina TV, Ivanov SV, Toropov AA. InAs/AlGaAs quantum dots for single-photon emission in a red spectral range. Sci Rep 2018; 8:5299. [PMID: 29593301 PMCID: PMC5871773 DOI: 10.1038/s41598-018-23687-7] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/02/2018] [Accepted: 03/14/2018] [Indexed: 11/30/2022] Open
Abstract
We report on comparative optical studies of InAs/Al0.44Ga0.56As quantum dots (QDs) grown by molecular beam epitaxy either with or without a thin GaAs interlayer inserted between the AlGaAs barrier and InAs QDs. Emission properties of individual QDs are investigated by micro-photoluminescence spectroscopy using 500-nm-size etched cylindric mesa structures. The single-photon statistics of the QDs of both types, emitting in the red spectral range between 636 and 750 nm, is confirmed by the measurements of the second-order correlation function. A negligibly small exciton fine structure splitting is detected in the majority of the QDs grown with the GaAs interlayer that implies the possibility of generating pairs of entangled photons with high entanglement fidelity.
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Affiliation(s)
- M V Rakhlin
- Ioffe Institute, 26 Politekhnicheskaya str., St. Petersburg, 194021, Russia.
| | - K G Belyaev
- Ioffe Institute, 26 Politekhnicheskaya str., St. Petersburg, 194021, Russia
| | - G V Klimko
- Ioffe Institute, 26 Politekhnicheskaya str., St. Petersburg, 194021, Russia
| | - I S Mukhin
- St. Petersburg Academic University RAS, 8/3 Khlopina str., St. Petersburg, 194021, Russia.,ITMO University, 49 Kronversky pr., St. Petersburg, 197101, Russia
| | - D A Kirilenko
- Ioffe Institute, 26 Politekhnicheskaya str., St. Petersburg, 194021, Russia
| | - T V Shubina
- Ioffe Institute, 26 Politekhnicheskaya str., St. Petersburg, 194021, Russia
| | - S V Ivanov
- Ioffe Institute, 26 Politekhnicheskaya str., St. Petersburg, 194021, Russia
| | - A A Toropov
- Ioffe Institute, 26 Politekhnicheskaya str., St. Petersburg, 194021, Russia
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Golovynskyi S, Seravalli L, Datsenko O, Kozak O, Kondratenko SV, Trevisi G, Frigeri P, Gombia E, Lavoryk SR, Golovynska I, Ohulchanskyy TY, Qu J. Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices. NANOSCALE RESEARCH LETTERS 2017; 12:559. [PMID: 28983869 PMCID: PMC5629186 DOI: 10.1186/s11671-017-2331-2] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2017] [Accepted: 09/27/2017] [Indexed: 05/24/2023]
Abstract
The bipolar effect of GaAs substrate and nearby layers on photovoltage of vertical metamorphic InAs/InGaAs in comparison with pseudomorphic (conventional) InAs/GaAs quantum dot (QD) structures were studied. Both metamorphic and pseudomorphic structures were grown by molecular beam epitaxy, using bottom contacts at either the grown n +-buffers or the GaAs substrate. The features related to QDs, wetting layers, and buffers have been identified in the photoelectric spectra of both the buffer-contacted structures, whereas the spectra of substrate-contacted samples showed the additional onset attributed to EL2 defect centers. The substrate-contacted samples demonstrated bipolar photovoltage; this was suggested to take place as a result of the competition between components related to QDs and their cladding layers with the substrate-related defects and deepest grown layer. No direct substrate effects were found in the spectra of the buffer-contacted structures. However, a notable negative influence of the n +-GaAs buffer layer on the photovoltage and photoconductivity signal was observed in the InAs/InGaAs structure. Analyzing the obtained results and the performed calculations, we have been able to provide insights on the design of metamorphic QD structures, which can be useful for the development of novel efficient photonic devices.
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Affiliation(s)
- Sergii Golovynskyi
- College of Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060 People’s Republic of China
- Institute of Semiconductor Physics, National Academy of Sciences, Kyiv, 03028 Ukraine
| | - Luca Seravalli
- Institute of Materials for Electronics and Magnetism, CNR-IMEM, 43100 Parma, Italy
| | - Oleksandr Datsenko
- Department of Physics, Taras Shevchenko National University of Kyiv, Kyiv, 01601 Ukraine
| | - Oleksii Kozak
- Department of Physics, Taras Shevchenko National University of Kyiv, Kyiv, 01601 Ukraine
| | - Serhiy V. Kondratenko
- Department of Physics, Taras Shevchenko National University of Kyiv, Kyiv, 01601 Ukraine
| | - Giovanna Trevisi
- Institute of Materials for Electronics and Magnetism, CNR-IMEM, 43100 Parma, Italy
| | - Paola Frigeri
- Institute of Materials for Electronics and Magnetism, CNR-IMEM, 43100 Parma, Italy
| | - Enos Gombia
- Institute of Materials for Electronics and Magnetism, CNR-IMEM, 43100 Parma, Italy
| | - Sergii R. Lavoryk
- Institute of Semiconductor Physics, National Academy of Sciences, Kyiv, 03028 Ukraine
| | - Iuliia Golovynska
- College of Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060 People’s Republic of China
| | - Tymish Y. Ohulchanskyy
- College of Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060 People’s Republic of China
| | - Junle Qu
- College of Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060 People’s Republic of China
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