Transmission Properties of FeCl3-Intercalated Graphene and WS2 Thin Films for Terahertz Time-Domain Spectroscopy Applications

CVD growth of large-area monolayer WS2 film on sapphire through tuning substrate environment and its application for high-sensitive strain sensor

Large-area, continuous monolayer WS₂ exhibits great potential for future micro-nanodevice applications due to its special electrical properties and mechanical flexibility. In this work, the front opening quartz boat is used to increase the amount of sulfur (S) vapor under the sapphire substrate, which is critical for achieving large-area films during the chemical vapor deposition processes. COMSOL simulations reveal that the front opening quartz boat will significantly introduce gas distribute under the sapphire substrate. Moreover, the gas velocity and height of substrate away from the tube bottom will also affect the substrate temperature. By carefully optimizing the gas velocity, temperature, and height of substrate away from the tube bottom, a large-scale continues monolayered WS₂ film was achieved. Field-effect transistor based on the as-grown monolayer WS₂ showed a mobility of 3.76 cm²V^-1 s^-1 and ON/OFF ratio of 10⁶. In addition, a flexible WS₂/PEN strain sensor with a gauge factor of 306 was fabricated, showing great potential for applications in wearable biosensors, health monitoring, and human-computer interaction.

Theoretical Model of a Plasmonically Enhanced Tunable Spectrally Selective Infrared Photodetector Based on Intercalation-Doped Nanopatterned Multilayer Graphene

We showed in past work that nanopatterned monolayer graphene (NPG) can be used for realizing an ultrafast (∼100 ns) and spectrally selective mid-infrared (mid-IR) photodetector based on the photothermoelectric effect and working in the 8-12 μm regime. In later work, we showed that the absorption wavelength of NPG can be extended to the 3-8 μm regime. Further extension to shorter wavelengths would require a smaller nanohole size that is not attainable with current technology. Here, we show by means of a theoretical model that nanopatterned multilayer graphene intercalated with FeCl₃ (NPMLG-FeCl₃) overcomes this problem by substantially extending the detection wavelength into the range from λ = 1.3 to 3 μm. We present a proof of concept for a spectrally selective infrared (IR) photodetector based on NPMLG-FeCl₃ that can operate from λ = 1.3 to 12 μm and beyond. The localized surface plasmons (LSPs) on the graphene sheets in NPMLG-FeCl₃ allow for electrostatic tuning of the photodetection wavelength. Most importantly, the LSPs along with an optical cavity increase the absorbance from about N × 2.6% for N-layer graphene-FeCl₃ (without patterning) to nearly 100% for NPMLG-FeCl₃, where the strong absorbance occurs locally inside the graphene sheets only. Our IR detection scheme relies on the photothermoelectric effect induced by asymmetric patterning of the multilayer graphene (MLG) sheets. The LSPs on the nanopatterned side create hot carriers that give rise to the Seebeck effect at room temperature, achieving a responsivity of R=6.15×103 V/W, a detectivity of D* = 2.3 × 10⁹ Jones, and an ultrafast response time of the order of 100 ns. Our theoretical results can be used to develop graphene-based photodetection, optical IR communication, IR color displays, and IR spectroscopy over a wide IR range.

Non-aqueous solution-processed phosphorene by controlled low-potential electrochemical exfoliation and thin film preparation

Black phosphorus (BP) in its monolayer form called phosphorene is thought of as a successor of graphene and is of great interest for (opto)electronic applications. A quantitative and scalable method for the synthesis of (mono-)few-layer phosphorene has been an outstanding challenge due to the process irreproducibility and environmental degradation capability of the BP. Here, we report a facile controlled electrochemical exfoliation method for the preparation of a few-layer phosphorene (FP) with nearly 100% yield. Our approach relies on the low-potential influence in anhydrous and oxygen-free low-boiling acetonitrile (AN) and N,N-dimethylformamide (DMF) using alkylammonium ions. Herein, intercalation of positive ions into BP interlayers occurred with a minimum potential of -2.95 V in DMF and -2.85 V in AN and the non-damaging and highly accurate electrochemical exfoliation lasted at -3.8 V. A variety of analytical methods have revealed that in particular DMF-based exfoliation results in high-quality phosphorene of 1-5 layers with good crystallinity and lateral sizes up to tens of micrometers. Moreover, assurance of the oxygen- and water-free environment allowed us to minimize the surface oxidation of BP and, consequently, exfoliated phosphorene. We pioneer an effective and reproducible printing transfer of electrochemically exfoliated phosphorene films onto various flexible and rigid substrates. The surfactant-free process of exfoliation allowed assembly and transfer of thin films based on FP. The phosphorene-based films characterized as direct gap semiconductors have a layer-number-dependent bandgap with a tuning range larger than that of other 2D materials. We show that on varying the films' thickness, it is possible to modify their optical properties, which is a significant advantage for compact and switchable optoelectronic components.