42.7 Gbit/s electro-optic modulator in silicon technology

High-performance Mach-Zehnder modulator using tailored plasma dispersion effects in an ITO/graphene-based waveguide

A high-performance electro-optic Mach-Zehnder modulator (MZM) with outstanding characteristics is proposed. The MZM is in a push-pull configuration that is constructed using an ITO/graphene-based silicon waveguide. A novel idea for engineering of the plasma dispersion effect in an ITO/graphene-based waveguide is proposed so that the modulation characteristics of the MZM are highly improved. Plasma dispersion effects of ITO and graphene layers are tailored in such a way that a large difference between real parts of guided mode effective index of the two arms is achieved while their corresponding imaginary parts are equal. As a result, a very low [Formula: see text] of [Formula: see text] is achieved. To the best of our knowledge, this is one of the lowest [Formula: see text] reported for an electro-optic modulator. In addition, the proposed modulator exhibits a very high extinction ratio of more than 30 dB, low insertion loss of 2.8 dB and energy consumption of as low as 10 fJ/bit, which are all promising for optical communication and processing systems.

The appeal of small molecules for practical nonlinear optics

Small organic molecules with a π-conjugated system that consists of only a few double or triple bonds can have significantly smaller optical excitation energies when equipped with donor- and acceptor groups, which raises the quantum limits to the molecular polarizabilities. As a consequence, third-order nonlinear optical polarizabilities become orders of magnitude larger than those of molecules of similar size without donor-acceptor substitution. This  enables strong third-order nonlinear optical effects (as high as 1000 times those of silica glass) in dense, amorphous monolithic assemblies. These properties, accompanied by the possibility of deposition from the vapor phase and of electric-field poling at higher temperatures, make the resulting materials competitive towards adding an active nonlinear optical or electro-optic functionality to state-of-the-art integrated photonics platforms.

Ultra-compact electro-optic modulator based on alternative plasmonic material

We propose an ultra-compact electro-optic microring modulator based on a hybrid plasmonic waveguide. In comparison to previously proposed structures, the present structure utilizes aluminum-doped zinc oxide (AZO), rather than noble metals, for plasmon excitation. AZO can be used to simultaneously tune both the real and imaginary parts of the dielectric constant by changing the carrier concentration. The modulation depth and insertion loss of the microring modulator are 18.70 and 2.76 dB. The proposed modulator has a high modulation speed because its capacitance is 0.22 fF. This device could be used in high-density integrated optical circuits.

Silicon-organic hybrid (SOH) Mach-Zehnder modulators for 100 GBd PAM4 signaling with sub-1 dB phase-shifter loss

We report on compact and efficient silicon-organic hybrid (SOH) Mach-Zehnder modulators (MZM) with low phase-shifter insertion loss of 0.7 dB. The 280 µm-long phase shifters feature a π-voltage-length product of 0.41 Vmm and a loss-efficiency product as small as aU_πL = 1.0 VdB. The device performance is demonstrated in a data transmission experiment, where we generate on-off-keying (OOK) and four-level pulse-amplitude modulation (PAM4) signals at symbol rates of 100 GBd, resulting in line rates of up to 200 Gbit/s. Bit error ratios are below the threshold for hard-decision forward error correction (HD-FEC) with 7% coding overhead, leading to net data rates of 187 Gbit/s. This is the highest PAM4 data rate ever achieved for a sub-1 mm silicon photonic MZM.

Verified equivalent-circuit model for slot-waveguide modulators

We formulate and experimentally validate an equivalent-circuit model based on distributed elements to describe the electric and electro-optic (EO) properties of travelling-wave silicon-organic hybrid (SOH) slot-waveguide modulators. The model allows to reliably predict the small-signal EO frequency response of the modulators exploiting purely electrical measurements of the frequency-dependent RF transmission characteristics. We experimentally verify the validity of our model, and we formulate design guidelines for an optimum trade-off between optical loss due to free-carrier absorption (FCA), electro-optic bandwidth, and π-voltage of SOH slot-waveguide modulators.

Electrically packaged silicon-organic hybrid (SOH) I/Q-modulator for 64 GBd operation

Silicon-organic hybrid (SOH) electro-optic (EO) modulators combine small footprint with low operating voltage and hence low power dissipation, thus lending themselves to on-chip integration of large-scale device arrays. Here we demonstrate an electrical packaging concept that enables high-density radio-frequency (RF) interfaces between on-chip SOH devices and external circuits. The concept combines high-resolution Al₂O₃ printed-circuit boards with technically simple metal wire bonds and is amenable to packaging of device arrays with small on-chip bond pad pitches. In a set of experiments, we characterize the performance of the underlying RF building blocks and we demonstrate the viability of the overall concept by generation of high-speed optical communication signals. Achieving line rates (symbols rates) of 128 Gbit/s (64 GBd) using quadrature-phase-shift-keying (QPSK) modulation and of 160 Gbit/s (40 GBd) using 16-state quadrature-amplitude-modulation (16QAM), we believe that our demonstration represents an important step in bringing SOH modulators from proof-of-concept experiments to deployment in commercial environments.

Silicon-Organic Hybrid (SOH) Mach-Zehnder Modulators for 100 Gbit/s on-off Keying

Electro-optic modulators for high-speed on-off keying (OOK) are key components of short- and medium-reach interconnects in data-center networks. Small footprint, cost-efficient large-scale production, small drive voltages and ultra-low power consumption are of paramount importance for such devices. Here we demonstrate that the concept of silicon-organic hybrid (SOH) integration perfectly meets these challenges. The approach combines the unique processing advantages of large-scale silicon photonics with unrivalled electro-optic (EO) coefficients obtained by molecular engineering of organic materials. Our proof-of-concept experiments demonstrate generation and transmission of OOK signals at line rates of up to 100 Gbit/s using a 1.1 mm-long SOH Mach-Zehnder modulator (MZM) featuring a π-voltage of only 0.9 V. The experiment represents the first demonstration of 100 Gbit/s OOK on the silicon photonic platform, featuring the lowest drive voltage and energy consumption ever demonstrated for a semiconductor-based device at this data rate. We support our results by a theoretical analysis showing that the nonlinear transfer characteristic of the MZM can help to overcome bandwidth limitations of the modulator and the electric driver circuitry. We expect that high-speed, power-efficient SOH modulators may have transformative impact on short-reach networks, enabling compact transceivers with unprecedented efficiency, thus building the base of future interfaces with Tbit/s data rates.

Coherent modulation up to 100 GBd 16QAM using silicon-organic hybrid (SOH) devices

We demonstrate the generation of higher-order modulation formats using silicon-based inphase/quadrature (IQ) modulators at symbol rates of up to 100 GBd. Our devices exploit the advantages of silicon-organic hybrid (SOH) integration, which combines silicon-on-insulator waveguides with highly efficient organic electro-optic (EO) cladding materials to enable small drive voltages and sub-millimeter device lengths. In our experiments, we use an SOH IQ modulator with a π-voltage of 1.6 V to generate 100 GBd 16QAM signals. This is the first time that the 100 GBd mark is reached with an IQ modulator realized on a semiconductor substrate, leading to a single-polarization line rate of 400 Gbit/s. The peak-to-peak drive voltages amount to 1.5 V_pp, corresponding to an electrical energy dissipation in the modulator of only 25 fJ/bit.

All-organic electro-optic waveguide modulator comprising SU-8 and nonlinear optical polymer

In this paper we describe the principles of operation as well as the fabrication and testing steps of an all-organic waveguide modulator. The modulator comprises an SU-8 core and an electro-optic host-guest polymer cladding. The polymer properties are tuned in order to achieve single mode operation. We used direct-write laser lithography in two steps for the preparation of the devices. The electro-optic coefficient of the polymer is estimated from observing the modulation of the device operated in push-pull mode.

Silicon-organic hybrid (SOH) modulators for intensity-modulation / direct-detection links with line rates of up to 120 Gbit/s

High-speed interconnects in data-center and campus-area networks crucially rely on efficient and technically simple transmission techniques that use intensity modulation and direct detection (IM/DD) to bridge distances of up to a few kilometers. This requires electro-optic modulators that combine low operation voltages with large modulation bandwidth and that can be operated at high symbol rates using integrated drive circuits. Here we explore the potential of silicon-organic hybrid (SOH) Mach-Zehnder modulators (MZM) for generating high-speed IM/DD signals at line rates of up to 120 Gbit/s. Using a SiGe BiCMOS signal-conditioning chip, we demonstrate that intensity-modulated duobinary (IDB) signaling allows to efficiently use the electrical bandwidth, thereby enabling line rates of up to 100 Gbit/s at bit error ratios (BER) of 8.5 × 10^-5. This is the highest data rate achieved so far using a silicon-based MZM in combination with a dedicated signal-conditioning integrated circuit (IC). We further show four-level pulse-amplitude modulation (PAM4) at lines rates of up to 120 Gbit/s (BER = 3.2 × 10^-3) using a high-speed arbitrary-waveform generator and a 0.5 mm long MZM. This is the highest data rate hitherto achieved with a sub-millimeter MZM on the silicon photonic platform.

Experimental demonstration of a reconfigurable electro-optic directed logic circuit using cascaded carrier-injection micro-ring resonators

We experimentally demonstrate a reconfigurable electro-optic directed logic circuit which can perform any combinatorial logic operation using cascaded carrier-injection micro-ring resonators (MRRs), and the logic circuit is fabricated on the silicon-on-insulator (SOI) substrate with the standard commercial Complementary Metal-Oxide-Semiconductor (CMOS) fabrication process. PIN diodes embedded around MRRs are employed to achieve the carrier injection modulation. The operands are represented by electrical signals, which are applied to the corresponding MRRs to control their switching states. The operation result is directed to the output port in the form of light. For proof of principle, several logic operations of three-operand with the operation speed of 100 Mbps are demonstrated successfully.

Nonlinearities of organic electro-optic materials in nanoscale slots and implications for the optimum modulator design

The performance of highly nonlinear organic electro-optic (EO) materials incorporated into nanoscale slots is examined. It is shown that EO coefficients as large as 190 pm/V can be obtained in 150 nm wide plasmonic slot waveguides but that the coefficients decrease for narrower slots. Possible mechanism that lead to such a decrease are discussed. Monte-Carlo computer simulations are performed, confirming that chromophore-surface interactions are one important factor influencing the EO coefficient in narrow plasmonic slots. These highly nonlinear materials are of particular interest for applications in optical modulators. However, in modulators the key parameters are the voltage-length product U_πL and the insertion loss rather than the linear EO coefficients. We show record-low voltage-length products of 70 Vµm and 50 Vµm for slot widths in the order of 50 nm for the materials JRD1 and DLD164, respectively. This is because the nonlinear interaction is enhanced in narrow slot and thereby compensates for the reduced EO coefficient. Likewise, it is found that lowest insertion losses are observed for slot widths in the range 60 to 100 nm.

Low driving voltage Mach-Zehnder interference modulator constructed from an electro-optic polymer on ultra-thin silicon with a broadband operation

An electro-optic (EO) polymer waveguide using an ultra-thin silicon hybrid has been designed and fabricated. The silicon core has the thickness of 50 nm and a width of 5 μm. The waveguide was completed after covering the cladding with the high temperature stable EO polymer. We have demonstrated a low half-wavelength voltage of 0.9 V at the wavelength of 1.55 μm by using a Mach-Zehnder interference modulator with TM mode operation. The measured modulation corresponded to an effective in-device EO coefficient of 165 pm/V. By utilizing the traveling-wave electrode on the modulator the high-frequency response was tested up to 40 GHz. The 3 dB modulation bandwidth was measured to be 23 GHz. In addition, the high frequency sideband spectral measurement revealed that a linear response of the modulation index against the RF power was confirmed up to 40 GHz signal.

Integrated optical frequency shifter in silicon-organic hybrid (SOH) technology

We demonstrate for the first time a waveguide-based frequency shifter on the silicon photonic platform using single-sideband modulation. The device is based on silicon-organic hybrid (SOH) electro-optic modulators, which combine conventional silicon-on-insulator waveguides with highly efficient electro-optic cladding materials. Using small-signal modulation, we demonstrate frequency shifts of up to 10 GHz. We further show large-signal modulation with optimized waveforms, enabling a conversion efficiency of -5.8 dB while suppressing spurious side-modes by more than 23 dB. In contrast to conventional acousto-optic frequency shifters, our devices lend themselves to large-scale integration on silicon substrates, while enabling frequency shifts that are several orders of magnitude larger than those demonstrated with all-silicon serrodyne devices.

Integrated photonic emitter with a wide switching range of orbital angular momentum modes

Due to the nature of infinite dimensionality, the orbital angular momentum (OAM) has been considered as a new degree of freedom of light and widely expanded the scopes of substantial optical applications such as optical telecommunication, quantum information, particle manipulation and imaging. In recent years, the integrated photonic OAM emitters have been actively investigated due to both compactness and tunability. Essentially, the number of available OAM modes by dynamic switching should be large enough so that the dimensionality of OAM could be explored as much as possible. In this work, an integrated photonic emitter with a wide switching range of OAM modes is theoretically developed, numerically simulated, and experimentally verified. The independence of the micro-ring cavity and the scattering unit provides the flexibility to design the device and optimize the performance. Specifically, the dynamic switching of nine OAM modes (l = −4 ~ 4) with azimuthal polarization has been demonstrated by electrically controlled thermo-optic effect.

Optimal geometry of nonlinear silicon slot waveguides accounting for the effect of waveguide losses

The optimal geometry of silicon-organic hybrid slot waveguides is investigated in the context of the efficiency of four-wave mixing (FWM), a χ(3) nonlinear optical process. We study the effect of slot and waveguide widths, as well as waveguide asymmetry on the two-photon absorption (TPA) figure of merit and the roughness scattering loss. The optimal waveguide core width is shown to be 220nm (symmetric) with a slot width of 120nm, at a fixed waveguide height of 220nm. We also show that state-of-the-art slot waveguides can outperform rib waveguides, especially at high powers, due to the high TPA figure-of-merit.

Sol-Gel Material-Enabled Electro-Optic Polymer Modulators

Sol-gels are an important material class, as they provide easy modification of material properties, good processability and are easy to synthesize. In general, an electro-optic (EO) modulator transforms an electrical signal into an optical signal. The incoming electrical signal is most commonly information encoded in a voltage change. This voltage change is then transformed into either a phase change or an intensity change in the light signal. The less voltage needed to drive the modulator and the lower the optical loss, the higher the link gain and, therefore, the better the performance of the modulator. In this review, we will show how sol-gels can be used to enhance the performance of electro-optic modulators by allowing for designs with low optical loss, increased poling efficiency and manipulation of the electric field used for driving the modulator. The optical loss is influenced by the propagation loss in the device, as well as the losses occurring during fiber coupling in and out of the device. In both cases, the use of sol-gel materials can be beneficial due to the wide range of available refractive indices and low optical attenuation. The influence of material properties and synthesis conditions on the device performance will be discussed.

Influence of BaTiO3 ferroelectric orientation for electro-optic modulation on silicon

The influence of BaTiO(3) ferroelectric domain orientations for high efficiency electro-optic modulation has been thoroughly analyzed. The Mach-Zehnder modulator structure is based on a CMOS compatible silicon/BaTiO(3)/silicon slot waveguide that supports both TE and TM polarizations whereas the Pockels effect is exploited by the application of a horizontal electric field with lateral electrodes placed on top of the BaTiO(3) layer. The influence of the waveguide parameters has been optimized for each configuration and the lowest V(π) voltage combined with low losses has been determined. A V(π)L as low as 0.27 V·cm has been obtained for a-axis oriented BaTiO(3) and TE polarization by rotating the waveguide structure to an optimum angle.

Graphene-based optical modulators

Optical modulators (OMs) are a key device in modern optical systems. Due to its unique optical properties, graphene has been recently utilized in the fabrication of optical modulators, which promise high performance such as broadband response, high modulation speed, and high modulation depth. In this paper, the latest experimental and theoretical demonstrations of graphene optical modulators (GOMs) with different structures and functions are reviewed. Particularly, the principles of electro-optical and all-optical modulators are illustrated. Additionally, the limitation of GOMs and possible methods to improve performance and practicability are discussed. At last, graphene terahertz modulators (GTMs) are introduced.

High-speed electro-optic modulator integrated with graphene-boron nitride heterostructure and photonic crystal nanocavity

Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and interchip communications.1-4 Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption, and modulation depth.5-11 However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications owing to its exceptional optical and electronic properties.12-14 Here, we demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modulation depth of 3.2 dB and a cutoff frequency of 1.2 GHz.

Hybrid Si-VO(2)-Au optical modulator based on near-field plasmonic coupling

We present a computational design for an integrated electro-optic modulator based on near-field plasmonic coupling between gold nanodisks and a thin film of vanadium dioxide on a silicon substrate. Active modulation is achieved by applying a time-varying electric field to initiate large changes in the refractive index of vanadium dioxide. Significant decrease in device footprint (200 nm x 560 nm) and increase in extinction ratio per unit length (9 dB/µm) compared to state-of-the-art photonic and plasmonic modulators are predicted.

A hybrid electro-optic polymer and TiO2 double-slot waveguide modulator

An electro-optic (EO) modulator using a TiO2 slot hybrid waveguide has been designed and fabricated. Optical mode calculations revealed that the mode was primarily confined within the slots when using a double-slot configuration, thus achieving a high EO activity experimentally. The TiO2 slots also acted as an important barrier to induce an enhanced DC field during the poling of the EO polymer and the driving of the EO modulator. The hybrid phase modulator exhibited a driving voltage (Vπ) of 1.6 V at 1550 nm, which can be further reduced to 0.8 V in a 1 cm-long push-pull Mach-Zehnder interferometer (MZI) structure. The modulator demonstrated a low propagation loss of 5 dB/cm and a relatively high end-fire coupling efficiency.

Recent advances in silicon-based passive and active optical interconnects

Silicon photonics has experienced phenomenal transformations over the last decade. In this paper, we present some of the notable advances in silicon-based passive and active optical interconnect components, and highlight some of our key contributions. Light is also cast on few other parallel technologies that are working in tandem with silicon-based structures, and providing unique functions not achievable with any single system acting alone. With an increasing utilization of CMOS foundries for silicon photonics fabrication, a viable path for realizing extremely low-cost integrated optoelectronics has been paved. These advances are expected to benefit several application domains in the years to come, including communication networks, sensing, and nonlinear systems.

Recent advances in polymer electro-optic modulators

Development of polymer EO modulators.

Integrated photonic reservoir computing based on hierarchical time-multiplexing structure

An integrated photonic reservoir computing (RC) based on hierarchical time-multiplexing structure is proposed by numerical simulations. A micro-ring array (MRA) is employed as a typical time delay implementation of RC. At the output port of the MRA, a secondary time-multiplexing is achieved by multi-mode interference (MMI) splitter and delay line array. This hierarchical time-multiplexing structure can ensure a large reservoir size with fast processing speed. Simulation results indicate that the proposed RC system yields better performance than previously reported ones. The achieved normalized mean square error between the system output and target sequence are 0.5% and 2.7% for signal classification and chaotic time series prediction, respectively, while the sample rate is as high as 1.3 Gbps.

Low-power silicon-organic hybrid (SOH) modulators for advanced modulation formats

We demonstrate silicon-organic hybrid (SOH) electro-optic modulators that enable quadrature phase-shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM) with high signal quality and record-low energy consumption. SOH integration combines highly efficient electro-optic organic materials with conventional silicon-on-insulator (SOI) slot waveguides, and allows to overcome the intrinsic limitations of silicon as an optical integration platform. We demonstrate QPSK and 16QAM signaling at symbol rates of 28 GBd with peak-to-peak drive voltages of 0.6 V(pp). For the 16QAM experiment at 112 Gbit/s, we measure a bit-error ratio of 5.1 × 10⁻⁵ and a record-low energy consumption of only 19 fJ/bit.

Optical detection and modulation at 2µm-2.5µm in silicon

Recently the 2μm wavelength region has emerged as an exciting prospect for the next generation of telecommunications. In this paper we experimentally characterise silicon based plasma dispersion effect optical modulation and defect based photodetection in the 2-2.5μm wavelength range. It is shown that the effectiveness of the plasma dispersion effect is dramatically increased in this wavelength window as compared to the traditional telecommunications wavelengths of 1.3μm and 1.55μm. Experimental results from the defect based photodetectors show that detection is achieved in the 2-2.5μm wavelength range, however the responsivity is reduced as the wavelength is increased away from 1.55μm.

Ultrafast all-optical modulation with hyperbolic metamaterial integrated in Si photonic circuitry

The integration of optical metamaterials within silicon integrated photonic circuitry bears significantly potential in the design of low-power, nanoscale footprint, all-optical functionalities. We propose a novel concept and provide detailed analysis of an on-chip ultrafast all-optical modulator based on an hyperbolic metamaterial integrated in a silicon waveguide. The anisotropic metamaterial based on gold nanorods is placed on top of the silicon waveguide to form a modulator with a 300x440x600 nm(3) footprint. For the operating wavelength of 1.5 μm, the optimized geometry of the device has insertion loss of about 5 dB and a modulation depth of 35% with a sub-ps switching rate. The switching energy estimated from nonlinear transient dynamic numerical simulations is 3.7 pJ/bit when the transmission is controlled optically at a wavelength of 532 nm, resonant with the transverse plasmonic mode of the metamaterial. The switching mechanism is based on the control of the hybridization of eigenmodes in the metamaterial slab and the Si waveguide.

Parameter extraction from fabricated silicon photonic devices

Three sets of devices were simulated, designed, and laid out for fabrication in the EuroPractice shuttle program and then measured in-house after fabrication. A combination of analytical and numerical modeling is used to extract the dispersion curves that define the effective index of refraction as a function of wavelength for three different classes of silicon photonic devices, namely, micro-ring resonators, racetrack resonators, and directional couplers. The results of this phenomenological study are made plausible by the linearity of the extracted dispersion curves with wavelength over the wavelength regime of interest (S and C bands) and the use of the determined effective indices to reconstruct the measured transmission as a function of wavelength curves in close agreement with experiment. The extracted effective indices can be used to place limits on the actual fabricated values of waveguide widths, thicknesses, radii of curvature, and coupling gaps.

Silicon-organic hybrid (SOH) frequency comb sources for terabit/s data transmission

We demonstrate frequency comb sources based on silicon-organic hybrid (SOH) electro-optic modulators. Frequency combs with line spacings of 25 GHz and 40 GHz are generated, featuring flat-top spectra with less than 2 dB power variations over up to 7 lines. The combs are used for WDM data transmission at terabit/s data rates and distances of up to 300 km.

Deposited low temperature silicon GHz modulator

We demonstrate gigahertz electro-optic modulator fabricated on low temperature polysilicon using excimer laser annealing technique compatible with CMOS backend integration. Carrier injection modulation at 3 Gbps is achieved. These results open up an array of possibilities for silicon photonics including photonics on DRAM and on flexible substrates.

Investigation of local strain distribution and linear electro-optic effect in strained silicon waveguides

We present detailed investigations of the local strain distribution and the induced second-order optical nonlinearity within strained silicon waveguides cladded with a Si₃N₄ strain layer. Micro-Raman Spectroscopy mappings and electro-optic characterization of waveguides with varying width w(WG) show that strain gradients in the waveguide core and the effective second-order susceptibility χ(2)(yyz) increase with reduced w(WG). For 300 nm wide waveguides a mean effective χ(2)(yyz) of 190 pm/V is achieved, which is the highest value reported for silicon so far. To gain more insight into the origin of the extraordinary large optical second-order nonlinearity of strained silicon waveguides numerical simulations of edge induced strain gradients in these structures are presented and discussed.

Design and analysis of ultra-compact EO polymer modulators based on hybrid plasmonic microring resonators

Ultra-compact EO polymer modulators based on hybrid plasmonic microring resonators are proposed, simulated and analyzed. Comparing with Si slot microring modulator, hybrid plasmonic microring modulator shows about 6-times enhancement of the figure of merit when the bending radius is around 510 nm, due to its much larger intrinsic quality factor in sub-micron radius range. Influences of the EO polymer height and Si height on the device's performance are analyzed and optimal design is given. When operating with a bias of 3.6 V, the proposed device has optical modulation amplitude of 0.8 and insertion loss of about 1 dB. The estimated power consumption is about 5 fJ/bit at 100 GHz.

Optimization of efficiency-loss figure of merit in carrier-depletion silicon Mach-Zehnder optical modulator

In this paper we study the optimization of interleaved Mach-Zehnder silicon carrier depletion electro-optic modulator. Following the simulation results we demonstrate a phase shifter with the lowest figure of merit (modulation efficiency multiplied by the loss per unit length) 6.7 V-dB. This result was achieved by reducing the junction width to 200 nm along the phase-shifter and optimizing the doping levels of the PN junction for operation in nearly fully depleted mode. The demonstrated low FOM is the result of both low V(π)L of ~0.78 Vcm (at reverse bias of 1V), and low free carrier loss (~6.6 dB/cm for zero bias). Our simulation results indicate that additional improvement in performance may be achieved by further reducing the junction width followed by increasing the doping levels.

Active unidirectional propagation of surface plasmons at subwavelength slits

Highly efficient, active and compact, unidirectional surface plasmon (SP) propagator composed of double subwavelength slits; filled with organic electro-optic (EO) material is proposed and investigated. By selecting appropriate structure parameters, obtained by solving phase relations between slits, the relative phase of SP generated at the slit exit aperture can be tailored. Simulation results show under normal illumination and external voltage of 8.7 V, SP launching efficiency of 55% and unidirectional SP extinction ratio about 47dB at wavelength of 632.8 nm is achieved. The power consumption of the structure is on the order of 9 fJ/bit which meet the power consumption limitation for optical devices. Moreover, the structure is very compact with effective total length of 1.2 µm and thickness of 0.6 µm.

Silicon-organic hybrid (SOH) IQ modulator using the linear electro-optic effect for transmitting 16QAM at 112 Gbit/s

Advanced modulation formats call for suitable IQ modulators. Using the silicon-on-insulator (SOI) platform we exploit the linear electro-optic effect by functionalizing a photonic integrated circuit with an organic χ(2)-nonlinear cladding. We demonstrate that this silicon-organic hybrid (SOH) technology allows the fabrication of IQ modulators for generating 16QAM signals with data rates up to 112 Gbit/s. To the best of our knowledge, this is the highest single-polarization data rate achieved so far with a silicon-integrated modulator. We found an energy consumption of 640 fJ/bit.

Characteristics of electro-refractive modulating based on Graphene-Oxide-Silicon waveguide

Graphene has attracted a high level of research interest because of its outstanding electronic transport properties and optical properties. Based on the Kubo formalism and the Maxwell equations, it's demonstrated that the optical conductivity of graphene can be controlled through the applied voltage. And we find that the graphene-oxide-silicon (GOS) based waveguide can be made into either the electro-absorptive or electron-refractive modulators. Using graphene as the active medium, we present a new electro-refractive Mach-Zender interferometer based on the GOS structure. This new GOS-based electron-refractive modulation mechanism can enable novel architectures for on-chip optical communications.

Second-order nonlinear silicon-organic hybrid waveguides

We describe a concept for second-order nonlinear optical processes in silicon photonics. A silicon-organic hybrid (SOH) double slot waveguide is dispersion-engineered for mode phase-matching (MPM). The proposed waveguide enables highly efficient nonlinear processes in the mid-IR range. With a cladding nonlinearity of χ(2) = 230 pm/V and 20 dBm pump power at a CW wavelength of 1550 nm, we predict a gain of 14.7 dB/cm for a 3100 nm signal. The suggested structure enables for the first time efficient second-order nonlinear optical mixing in silicon photonics with standard technology.

Low-loss, silicon integrated, aluminum nitride photonic circuits and their use for electro-optic signal processing

Photonic miniaturization requires seamless integration of linear and nonlinear optical components to achieve passive and active functions simultaneously. Among the available material systems, silicon photonics holds immense promise for optical signal processing and on-chip optical networks. However, silicon is limited to wavelengths above 1.1 μm and does not provide the desired lowest order optical nonlinearity for active signal processing. Here we report the integration of aluminum nitride (AlN) films on silicon substrates to bring active functionalities to chip-scale photonics. Using CMOS-compatible sputtered thin films we fabricate AlN-on-insulator waveguides that exhibit low propagation loss (0.6 dB/cm). Exploiting AlN's inherent Pockels effect we demonstrate electro-optic modulation up to 4.5 Gb/s with very low energy consumption (down to 10 fJ/bit). The ultrawide transparency window of AlN devices also enables high speed modulation at visible wavelengths. Our low cost, wideband, carrier-free photonic circuits hold promise for ultralow power and high-speed signal processing at the microprocessor chip level.

Silicon-organic hybrid phase shifter based on a slot waveguide with a liquid-crystal cladding

A highly efficient phase shifter based on the silicon-organic hybrid (SOH) platform is theoretically investigated and experimentally tested. The device consists of a silicon slot waveguide covered with an organic liquid-crystal (LC) cladding. A record-low voltage-length product of U(π)L = 0.085 Vmm can be achieved for high-purity materials where an optimum operation point can be set by a DC bias. With standard materials and without a DC bias, we measure a phase shift of 35π with a drive voltage of only 5 V for a 1.7 mm long device corresponding to a voltage-length product of U(π)L = 0.24 Vmm. The power dissipation is about six orders of magnitude smaller than that of state-of-the-art thermo-optic devices, thereby enabling dense integration of LC phase shifters in advanced photonic integrated circuits.

Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators

Carrier-depletion based silicon modulators with lateral and interdigitated PN junctions are compared systematically on the same fabrication platform. The interdigitated diode is shown to outperform the lateral diode in achieving a low VπLπ of 0.62 V∙cm with comparable propagation loss at the expense of a higher depletion capacitance. The low VπLπ of the interdigitated PN junction is employed to demonstrate 10 Gbit/s modulation with 7.5 dB extinction ration from a 500 µm long device whose static insertion loss is 2.8 dB. In addition, up to 40 Gbit/s modulation is demonstrated for a 3 mm long device comprising a lateral diode and a co-designed traveling wave electrode.

Over 67 GHz bandwidth hybrid silicon electroabsorption modulator with asymmetric segmented electrode for 1.3 μm transmission

A distributed III-V-on-Si electroabsorption modulator based on an asymmetric segmented electrode has been developed on the hybrid silicon platform for the 1.3 μm transmission window. The measured modulation response shows a 2 dB drop at 67 GHz and an extrapolated 3 dB bandwidth of 74 GHz. Large signal measurements show clearly open eye diagrams at 50 Gb/s. An extinction ratio of 9.6 dB for back to back transmission and an extinction ratio of 9.4 dB after 16 km transmission were obtained with a drive voltage of 2.2 V.

High speed silicon electro-optical modulators enhanced via slow light propagation

While current optical communication networks efficiently carry and process huge amounts of digital information over large and medium distances, silicon photonics technology has the capacity to meet the ceaselessly increasing demand for bandwidth via energy efficient, inexpensive and mass producible short range optical interconnects. In this context, handling electrical-to-optical data conversion through compact and high speed electro-optical modulators is of paramount importance. To tackle these challenges, we combine the attractive properties of slow light propagation in a nanostructured periodic waveguide together with a high speed semiconductor pn diode, and demonstrate a highly efficient and mass manufacturable 500 µm-long silicon electro-optical device, exhibiting error free modulation up to 20 Gbit/s. These results, supported by modulation rate capabilities reaching 40 Gbit/s, pave a foreseeable way towards dense, low power and ultra fast integrated networks-on-chip for future chip-scale high performance computing systems.

Pockels effect based fully integrated, strained silicon electro-optic modulator

We demonstrate for the first time a fully integrated electro-optic modulator based on locally strained silicon rib-waveguides. By depositing a Si3N4 strain layer directly on top of the silicon waveguide the silicon crystal is asymmetrically distorted. Thus its inversion symmetry is broken and a linear electro-optic effect is induced. Electro-optic characterization yields a record high value χ(2)(yyz) = 122 pm/V for the second-order susceptibility of the strained silicon waveguide and a strict linear dependence between the applied modulation voltage V(mod) and the resulting effective index change Δn(eff). Spatially resolved micro-Raman and terahertz (THz) difference frequency generation (DFG) experiments provide in-depth insight into the origin of the electro-optic effect by correlating the local strain distribution with the observed second-order optical activity.