1
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Lee Y, Dai W, Towsley D, Englund D. Quantum network utility: A framework for benchmarking quantum networks. Proc Natl Acad Sci U S A 2024; 121:e2314103121. [PMID: 38640345 PMCID: PMC11047070 DOI: 10.1073/pnas.2314103121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/15/2023] [Accepted: 02/14/2024] [Indexed: 04/21/2024] Open
Abstract
The central aim of quantum networks is to facilitate user connectivity via quantum channels, but there is an open need for benchmarking metrics to compare diverse quantum networks. Here, we propose a general framework for quantifying the performance of a quantum network by estimating the value created by connecting users through quantum channels. In this framework, we define the quantum network utility metric [Formula: see text] to capture the social and economic value of quantum networks. The proposed framework accommodates a variety of applications from secure communications to distributed sensing. As a case study, we investigate the example of distributed quantum computing in detail. We determine the scaling laws of quantum network utility, which suggest that distributed edge quantum computing has more potential for success than its classical equivalent. We believe the proposed utility-based framework will serve as a foundation for guiding and assessing the development of quantum network technologies and designs.
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Affiliation(s)
- Yuan Lee
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA02139
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA02139
| | - Wenhan Dai
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA02139
- College of Information and Computer Sciences, University of Massachusetts, Amherst, MA01003
- Quantum Photonics Laboratory, Massachusetts Institute of Technology, Cambridge, MA02139
| | - Don Towsley
- College of Information and Computer Sciences, University of Massachusetts, Amherst, MA01003
| | - Dirk Englund
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA02139
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA02139
- Quantum Photonics Laboratory, Massachusetts Institute of Technology, Cambridge, MA02139
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2
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Becker S, Englund D, Stiller B. An optoacoustic field-programmable perceptron for recurrent neural networks. Nat Commun 2024; 15:3020. [PMID: 38627394 PMCID: PMC11021513 DOI: 10.1038/s41467-024-47053-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/28/2023] [Accepted: 03/18/2024] [Indexed: 04/19/2024] Open
Abstract
Recurrent neural networks (RNNs) can process contextual information such as time series signals and language. But their tracking of internal states is a limiting factor, motivating research on analog implementations in photonics. While photonic unidirectional feedforward neural networks (NNs) have demonstrated big leaps, bi-directional optical RNNs present a challenge: the need for a short-term memory that (i) programmable and coherently computes optical inputs, (ii) minimizes added noise, and (iii) allows scalability. Here, we experimentally demonstrate an optoacoustic recurrent operator (OREO) which meets (i, ii, iii). OREO contextualizes the information of an optical pulse sequence via acoustic waves. The acoustic waves link different optical pulses, capturing their information and using it to manipulate subsequent operations. OREO's all-optical control on a pulse-by-pulse basis offers simple reconfigurability and is used to implement a recurrent drop-out and pattern recognition of 27 optical pulse patterns. Finally, we introduce OREO as bi-directional perceptron for new classes of optical NNs.
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Affiliation(s)
- Steven Becker
- Max Planck Institute for the Science of Light, Staudtstr. 2, 91058, Erlangen, Germany
- Department of Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, Staudtstr. 7, 91058, Erlangen, Germany
| | - Dirk Englund
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Birgit Stiller
- Max Planck Institute for the Science of Light, Staudtstr. 2, 91058, Erlangen, Germany.
- Department of Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, Staudtstr. 7, 91058, Erlangen, Germany.
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3
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Flores HR, Layton SR, Englund D, Camacho RM. Alignment-free coupling to arrays of diamond microdisk cavities with fabrication tolerant spin-photon interfaces. Opt Express 2024; 32:12054-12064. [PMID: 38571039 DOI: 10.1364/oe.515620] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2023] [Accepted: 02/24/2024] [Indexed: 04/05/2024]
Abstract
We propose a design for an efficient spin-photon interface to a color center in a diamond microdisk. The design consists of a silicon oxynitride triangular lattice overlaid on a diamond microdisk without any aligmnent between the layers. This enables vertical emission from the microdisk into low-numerical aperture modes, with quantum efficiencies as high as 46% for a tin vacancy (SnV) center. Our design is robust to manufacturing errors, potentially enabling large scale fabrication of quantum emitters coupled to optical collection modes. We also introduce a novel approach for optimizing the free space performance of our device using a dipole model, achieving comparable results to full-wave finite difference time domain simulations with 7 · 106 reduction in computational time.
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4
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Almutlaq J, Liu Y, Mir WJ, Sabatini RP, Englund D, Bakr OM, Sargent EH. Engineering colloidal semiconductor nanocrystals for quantum information processing. Nat Nanotechnol 2024:10.1038/s41565-024-01606-4. [PMID: 38514820 DOI: 10.1038/s41565-024-01606-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/05/2022] [Accepted: 01/10/2024] [Indexed: 03/23/2024]
Abstract
Quantum information processing-which relies on spin defects or single-photon emission-has shown quantum advantage in proof-of-principle experiments including microscopic imaging of electromagnetic fields, strain and temperature in applications ranging from battery research to neuroscience. However, critical gaps remain on the path to wider applications, including a need for improved functionalization, deterministic placement, size homogeneity and greater programmability of multifunctional properties. Colloidal semiconductor nanocrystals can close these gaps in numerous application areas, following years of rapid advances in synthesis and functionalization. In this Review, we specifically focus on three key topics: optical interfaces to long-lived spin states, deterministic placement and delivery for sensing beyond the standard quantum limit, and extensions to multifunctional colloidal quantum circuits.
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Affiliation(s)
- Jawaher Almutlaq
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yuan Liu
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, USA
| | - Wasim J Mir
- KAUST Catalysis Center, Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia
| | - Randy P Sabatini
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada.
| | - Dirk Englund
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Osman M Bakr
- KAUST Catalysis Center, Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia.
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada.
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, USA.
- Department of Chemistry, Northwestern University, Evanston, IL, USA.
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5
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Clark G, Raniwala H, Koppa M, Chen K, Leenheer A, Zimmermann M, Dong M, Li L, Wen YH, Dominguez D, Trusheim M, Gilbert G, Eichenfield M, Englund D. Nanoelectromechanical Control of Spin-Photon Interfaces in a Hybrid Quantum System on Chip. Nano Lett 2024; 24:1316-1323. [PMID: 38227973 PMCID: PMC10835722 DOI: 10.1021/acs.nanolett.3c04301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2023] [Revised: 01/03/2024] [Accepted: 01/05/2024] [Indexed: 01/18/2024]
Abstract
Color centers (CCs) in nanostructured diamond are promising for optically linked quantum technologies. Scaling to useful applications motivates architectures meeting the following criteria: C1 individual optical addressing of spin qubits; C2 frequency tuning of spin-dependent optical transitions; C3 coherent spin control; C4 active photon routing; C5 scalable manufacturability; and C6 low on-chip power dissipation for cryogenic operations. Here, we introduce an architecture that simultaneously achieves C1-C6. We realize piezoelectric strain control of diamond waveguide-coupled tin vacancy centers with ultralow power dissipation necessary. The DC response of our device allows emitter transition tuning by over 20 GHz, combined with low-power AC control. We show acoustic spin resonance of integrated tin vacancy spins and estimate single-phonon coupling rates over 1 kHz in the resolved sideband regime. Combined with high-speed optical routing, our work opens a path to scalable single-qubit control with optically mediated entangling gates.
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Affiliation(s)
- Genevieve Clark
- The
MITRE Corporation, 202 Burlington Road, Bedford, Massachusetts 01730, United States
- Research
Laboratory of Electronics, Massachusetts
Institute of Technology, 50 Vassar Street, Cambridge, Massachusetts 02139, United States
| | - Hamza Raniwala
- Research
Laboratory of Electronics, Massachusetts
Institute of Technology, 50 Vassar Street, Cambridge, Massachusetts 02139, United States
| | - Matthew Koppa
- Sandia
National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185, United States
| | - Kevin Chen
- Research
Laboratory of Electronics, Massachusetts
Institute of Technology, 50 Vassar Street, Cambridge, Massachusetts 02139, United States
| | - Andrew Leenheer
- Sandia
National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185, United States
| | - Matthew Zimmermann
- The
MITRE Corporation, 202 Burlington Road, Bedford, Massachusetts 01730, United States
| | - Mark Dong
- The
MITRE Corporation, 202 Burlington Road, Bedford, Massachusetts 01730, United States
- Research
Laboratory of Electronics, Massachusetts
Institute of Technology, 50 Vassar Street, Cambridge, Massachusetts 02139, United States
| | - Linsen Li
- Research
Laboratory of Electronics, Massachusetts
Institute of Technology, 50 Vassar Street, Cambridge, Massachusetts 02139, United States
| | - Y. Henry Wen
- The
MITRE Corporation, 202 Burlington Road, Bedford, Massachusetts 01730, United States
| | - Daniel Dominguez
- Sandia
National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185, United States
| | - Matthew Trusheim
- Research
Laboratory of Electronics, Massachusetts
Institute of Technology, 50 Vassar Street, Cambridge, Massachusetts 02139, United States
- DEVCOM,
Army Research Laboratory, Adelphi, Maryland 20783, United States
| | - Gerald Gilbert
- The
MITRE Corporation, 200
Forrestal Road, Princeton, New Jersey 08540, United States
| | - Matt Eichenfield
- College of
Optical Sciences, University of Arizona, Tucson, Arizona 85719, United States
| | - Dirk Englund
- Research
Laboratory of Electronics, Massachusetts
Institute of Technology, 50 Vassar Street, Cambridge, Massachusetts 02139, United States
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6
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Dong M, Boyle JM, Palm KJ, Zimmermann M, Witte A, Leenheer AJ, Dominguez D, Gilbert G, Eichenfield M, Englund D. Synchronous micromechanically resonant programmable photonic circuits. Nat Commun 2023; 14:7716. [PMID: 38001076 PMCID: PMC10673894 DOI: 10.1038/s41467-023-42866-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/22/2023] [Accepted: 10/22/2023] [Indexed: 11/26/2023] Open
Abstract
Programmable photonic integrated circuits (PICs) are emerging as powerful tools for control of light, with applications in quantum information processing, optical range finding, and artificial intelligence. Low-power implementations of these PICs involve micromechanical structures driven capacitively or piezoelectrically but are often limited in modulation bandwidth by mechanical resonances and high operating voltages. Here we introduce a synchronous, micromechanically resonant design architecture for programmable PICs and a proof-of-principle 1×8 photonic switch using piezoelectric optical phase shifters. Our design purposefully exploits high-frequency mechanical resonances and optically broadband components for larger modulation responses on the order of the mechanical quality factor Qm while maintaining fast switching speeds. We experimentally show switching cycles of all 8 channels spaced by approximately 11 ns and operating at 4.6 dB average modulation enhancement. Future advances in micromechanical devices with high Qm, which can exceed 10000, should enable an improved series of low-voltage and high-speed programmable PICs.
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Affiliation(s)
- Mark Dong
- The MITRE Corporation, 202 Burlington Road, Bedford, MA, 01730, USA.
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
| | - Julia M Boyle
- The MITRE Corporation, 202 Burlington Road, Bedford, MA, 01730, USA
| | - Kevin J Palm
- The MITRE Corporation, 202 Burlington Road, Bedford, MA, 01730, USA
| | | | - Alex Witte
- The MITRE Corporation, 202 Burlington Road, Bedford, MA, 01730, USA
| | - Andrew J Leenheer
- Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM, 87185, USA
| | - Daniel Dominguez
- Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM, 87185, USA
| | - Gerald Gilbert
- The MITRE Corporation, 200 Forrestal Road, Princeton, NJ, 08540, USA
| | - Matt Eichenfield
- Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM, 87185, USA
- College of Optical Sciences, University of Arizona, Tucson, AZ, 85719, USA
| | - Dirk Englund
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Brookhaven National Laboratory, 98 Rochester Street, Upton, NY, 11973, USA
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7
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Dyck O, Almutlaq J, Lingerfelt D, Swett JL, Oxley MP, Huang B, Lupini AR, Englund D, Jesse S. Direct imaging of electron density with a scanning transmission electron microscope. Nat Commun 2023; 14:7550. [PMID: 37985658 PMCID: PMC10662251 DOI: 10.1038/s41467-023-42256-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Accepted: 07/27/2023] [Indexed: 11/22/2023] Open
Abstract
Recent studies of secondary electron (SE) emission in scanning transmission electron microscopes suggest that material's properties such as electrical conductivity, connectivity, and work function can be probed with atomic scale resolution using a technique known as secondary electron e-beam-induced current (SEEBIC). Here, we apply the SEEBIC imaging technique to a stacked 2D heterostructure device to reveal the spatially resolved electron density of an encapsulated WSe2 layer. We find that the double Se lattice site shows higher emission than the W site, which is at odds with first-principles modelling of valence ionization of an isolated WSe2 cluster. These results illustrate that atomic level SEEBIC contrast within a single material is possible and that an enhanced understanding of atomic scale SE emission is required to account for the observed contrast. In turn, this suggests that, in the future, subtle information about interlayer bonding and the effect on electron orbitals could be directly revealed with this technique.
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Affiliation(s)
- Ondrej Dyck
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA.
| | | | - David Lingerfelt
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Jacob L Swett
- Biodesign Institute, Arizona State University, Tempe, 87287, AZ, USA
| | - Mark P Oxley
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Bevin Huang
- Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Andrew R Lupini
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Dirk Englund
- Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Stephen Jesse
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
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8
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Golter DA, Clark G, El Dandachi T, Krastanov S, Leenheer AJ, Wan NH, Raniwala H, Zimmermann M, Dong M, Chen KC, Li L, Eichenfield M, Gilbert G, Englund D. Selective and Scalable Control of Spin Quantum Memories in a Photonic Circuit. Nano Lett 2023; 23:7852-7858. [PMID: 37643457 PMCID: PMC10510697 DOI: 10.1021/acs.nanolett.3c01511] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2023] [Revised: 07/07/2023] [Indexed: 08/31/2023]
Abstract
A central goal in many quantum information processing applications is a network of quantum memories that can be entangled with each other while being individually controlled and measured with high fidelity. This goal has motivated the development of programmable photonic integrated circuits (PICs) with integrated spin quantum memories using diamond color center spin-photon interfaces. However, this approach introduces a challenge into the microwave control of individual spins within closely packed registers. Here, we present a quantum memory-integrated photonics platform capable of (i) the integration of multiple diamond color center spins into a cryogenically compatible, high-speed programmable PIC platform, (ii) selective manipulation of individual spin qubits addressed via tunable magnetic field gradients, and (iii) simultaneous control of qubits using numerically optimized microwave pulse shaping. The combination of localized optical control, enabled by the PIC platform, together with selective spin manipulation opens the path to scalable quantum networks on intrachip and interchip platforms.
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Affiliation(s)
- D. Andrew Golter
- The
MITRE Corporation, 202 Burlington Road, Bedford, Massachusetts 01730, United States
| | - Genevieve Clark
- The
MITRE Corporation, 202 Burlington Road, Bedford, Massachusetts 01730, United States
- Research
Laboratory of Electronics, Massachusetts
Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Tareq El Dandachi
- Research
Laboratory of Electronics, Massachusetts
Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Stefan Krastanov
- Research
Laboratory of Electronics, Massachusetts
Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Andrew J. Leenheer
- Sandia
National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185, United States
| | - Noel H. Wan
- Research
Laboratory of Electronics, Massachusetts
Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Hamza Raniwala
- Research
Laboratory of Electronics, Massachusetts
Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Matthew Zimmermann
- The
MITRE Corporation, 202 Burlington Road, Bedford, Massachusetts 01730, United States
| | - Mark Dong
- The
MITRE Corporation, 202 Burlington Road, Bedford, Massachusetts 01730, United States
- Research
Laboratory of Electronics, Massachusetts
Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Kevin C. Chen
- Research
Laboratory of Electronics, Massachusetts
Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Linsen Li
- Research
Laboratory of Electronics, Massachusetts
Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Matt Eichenfield
- Sandia
National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185, United States
- College
of Optical Sciences, University of Arizona, Tucson, Arizona 85719, United States
| | - Gerald Gilbert
- The
MITRE Corporation, 200
Forrestal Road, Princeton, New Jersey 08540, United States
| | - Dirk Englund
- Research
Laboratory of Electronics, Massachusetts
Institute of Technology, Cambridge, Massachusetts 02139, United States
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9
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Vadlamani SK, Englund D, Hamerly R. Transferable learning on analog hardware. Sci Adv 2023; 9:eadh3436. [PMID: 37436989 DOI: 10.1126/sciadv.adh3436] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2023] [Accepted: 06/12/2023] [Indexed: 07/14/2023]
Abstract
While analog neural network (NN) accelerators promise massive energy and time savings, an important challenge is to make them robust to static fabrication error. Present-day training methods for programmable photonic interferometer circuits, a leading analog NN platform, do not produce networks that perform well in the presence of static hardware errors. Moreover, existing hardware error correction techniques either require individual retraining of every analog NN (which is impractical in an edge setting with millions of devices), place stringent demands on component quality, or introduce hardware overhead. We solve all three problems by introducing one-time error-aware training techniques that produce robust NNs that match the performance of ideal hardware and can be exactly transferred to arbitrary highly faulty photonic NNs with hardware errors up to five times larger than present-day fabrication tolerances.
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Affiliation(s)
- Sri Krishna Vadlamani
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Dirk Englund
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Ryan Hamerly
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- NTT Research Inc., Sunnyvale, CA 94085, USA
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10
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Bernstein L, Sludds A, Panuski C, Trajtenberg-Mills S, Hamerly R, Englund D. Single-shot optical neural network. Sci Adv 2023; 9:eadg7904. [PMID: 37343096 DOI: 10.1126/sciadv.adg7904] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/22/2023] [Accepted: 05/15/2023] [Indexed: 06/23/2023]
Abstract
Analog optical and electronic hardware has emerged as a promising alternative to digital electronics to improve the efficiency of deep neural networks (DNNs). However, previous work has been limited in scalability (input vector length K ≈ 100 elements) or has required nonstandard DNN models and retraining, hindering widespread adoption. Here, we present an analog, CMOS-compatible DNN processor that uses free-space optics to reconfigurably distribute an input vector and optoelectronics for static, updatable weighting and the nonlinearity-with K ≈ 1000 and beyond. We demonstrate single-shot-per-layer classification of the MNIST, Fashion-MNIST, and QuickDraw datasets with standard fully connected DNNs, achieving respective accuracies of 95.6, 83.3, and 79.0% without preprocessing or retraining. We also experimentally determine the fundamental upper bound on throughput (∼0.9 exaMAC/s), set by the maximum optical bandwidth before substantial increase in error. Our combination of wide spectral and spatial bandwidths enables highly efficient computing for next-generation DNNs.
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Affiliation(s)
- Liane Bernstein
- Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar St, Cambridge, MA 02139, USA
| | - Alexander Sludds
- Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar St, Cambridge, MA 02139, USA
- Lightmatter Inc., 100 Summer St, Boston, MA 02110, USA
| | - Christopher Panuski
- Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar St, Cambridge, MA 02139, USA
| | - Sivan Trajtenberg-Mills
- Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar St, Cambridge, MA 02139, USA
| | - Ryan Hamerly
- Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar St, Cambridge, MA 02139, USA
- NTT Research Inc., Physics and Informatics Laboratories, Sunnyvale, CA 94085, USA
| | - Dirk Englund
- Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar St, Cambridge, MA 02139, USA
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11
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Prabhu M, Errando-Herranz C, De Santis L, Christen I, Chen C, Gerlach C, Englund D. Individually addressable and spectrally programmable artificial atoms in silicon photonics. Nat Commun 2023; 14:2380. [PMID: 37185250 PMCID: PMC10130169 DOI: 10.1038/s41467-023-37655-x] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/11/2022] [Accepted: 03/27/2023] [Indexed: 05/17/2023] Open
Abstract
A central goal for quantum technologies is to develop platforms for precise and scalable control of individually addressable artificial atoms with efficient optical interfaces. Color centers in silicon, such as the recently-isolated carbon-related G-center, exhibit emission directly into the telecommunications O-band and can leverage the maturity of silicon-on-insulator photonics. We demonstrate the generation, individual addressing, and spectral trimming of G-center artificial atoms in a silicon-on-insulator photonic integrated circuit platform. Focusing on the neutral charge state emission at 1278 nm, we observe waveguide-coupled single photon emission with narrow inhomogeneous distribution with standard deviation of 1.1 nm, excited state lifetime of 8.3 ± 0.7 ns, and no degradation after over a month of operation. In addition, we introduce a technique for optical trimming of spectral transitions up to 300 pm (55 GHz) and local deactivation of single artificial atoms. This non-volatile spectral programming enables alignment of quantum emitters into 25 GHz telecommunication grid channels. Our demonstration opens the path to quantum information processing based on implantable artificial atoms in very large scale integrated photonics.
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Affiliation(s)
- Mihika Prabhu
- Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Carlos Errando-Herranz
- Massachusetts Institute of Technology, Cambridge, MA, USA.
- University of Münster, Münster, Germany.
| | - Lorenzo De Santis
- Massachusetts Institute of Technology, Cambridge, MA, USA
- QuTech, Delft University of Technology, Delft, The Netherlands
| | - Ian Christen
- Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Changchen Chen
- Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Connor Gerlach
- Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Dirk Englund
- Massachusetts Institute of Technology, Cambridge, MA, USA.
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12
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Chanana A, Larocque H, Moreira R, Carolan J, Guha B, Melo EG, Anant V, Song J, Englund D, Blumenthal DJ, Srinivasan K, Davanco M. Ultra-low loss quantum photonic circuits integrated with single quantum emitters. Nat Commun 2022; 13:7693. [PMID: 36509782 PMCID: PMC9744872 DOI: 10.1038/s41467-022-35332-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/09/2022] [Accepted: 11/29/2022] [Indexed: 12/14/2022] Open
Abstract
The scaling of many photonic quantum information processing systems is ultimately limited by the flux of quantum light throughout an integrated photonic circuit. Source brightness and waveguide loss set basic limits on the on-chip photon flux. While substantial progress has been made, separately, towards ultra-low loss chip-scale photonic circuits and high brightness single-photon sources, integration of these technologies has remained elusive. Here, we report the integration of a quantum emitter single-photon source with a wafer-scale, ultra-low loss silicon nitride photonic circuit. We demonstrate triggered and pure single-photon emission into a Si3N4 photonic circuit with ≈ 1 dB/m propagation loss at a wavelength of ≈ 930 nm. We also observe resonance fluorescence in the strong drive regime, showing promise towards coherent control of quantum emitters. These results are a step forward towards scaled chip-integrated photonic quantum information systems in which storing, time-demultiplexing or buffering of deterministically generated single-photons is critical.
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Affiliation(s)
- Ashish Chanana
- grid.94225.38000000012158463XMicrosystems and Nanotechnology Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD USA ,grid.164295.d0000 0001 0941 7177Institute for Research in Electronics and Applied Physics and Maryland NanoCenter, University of Maryland, College Park, MD USA ,grid.421663.40000 0004 7432 9327Theiss Research, La Jolla, CA USA
| | - Hugo Larocque
- grid.116068.80000 0001 2341 2786Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA USA
| | - Renan Moreira
- grid.133342.40000 0004 1936 9676Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA USA
| | - Jacques Carolan
- grid.116068.80000 0001 2341 2786Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA USA ,grid.83440.3b0000000121901201Present Address: Wolfson Institute for Biomedical Research, University College London, London, UK
| | - Biswarup Guha
- grid.94225.38000000012158463XMicrosystems and Nanotechnology Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD USA ,grid.94225.38000000012158463XJoint Quantum Institute, NIST/University of Maryland, College Park, MD USA
| | - Emerson G. Melo
- grid.94225.38000000012158463XMicrosystems and Nanotechnology Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD USA ,grid.11899.380000 0004 1937 0722Materials Engineering Department, Lorena School of Engineering, University of São Paulo, Lorena, SP Brazil
| | - Vikas Anant
- grid.505023.1Photon Spot, Inc., Monrovia, CA USA
| | - Jindong Song
- grid.35541.360000000121053345Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul, 02792 South Korea
| | - Dirk Englund
- grid.116068.80000 0001 2341 2786Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA USA
| | - Daniel J. Blumenthal
- grid.133342.40000 0004 1936 9676Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA USA
| | - Kartik Srinivasan
- grid.94225.38000000012158463XMicrosystems and Nanotechnology Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD USA ,grid.94225.38000000012158463XJoint Quantum Institute, NIST/University of Maryland, College Park, MD USA
| | - Marcelo Davanco
- grid.94225.38000000012158463XMicrosystems and Nanotechnology Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD USA
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13
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Hamerly R, Bandyopadhyay S, Englund D. Asymptotically fault-tolerant programmable photonics. Nat Commun 2022; 13:6831. [DOI: 10.1038/s41467-022-34308-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2022] [Accepted: 10/20/2022] [Indexed: 11/30/2022] Open
Abstract
AbstractComponent errors limit the scaling of programmable coherent photonic circuits. These errors arise because the standard tunable photonic coupler—the Mach-Zehnder interferometer (MZI)—cannot be perfectly programmed to the cross state. Here, we introduce two modified circuit architectures that overcome this limitation: (1) a 3-splitter MZI mesh for generic errors, and (2) a broadband MZI+Crossing design for correlated errors. Because these designs allow for perfect realization of the cross state, the matrix fidelity no longer degrades with increased mesh size, allowing scaling to arbitrarily large meshes. The proposed architectures support progressive self-configuration, are more compact than previous MZI-doubling schemes, and do not require additional phase shifters. This removes a key limitation to the development of very-large-scale programmable photonic circuits.
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14
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Arjona Martínez J, Parker RA, Chen KC, Purser CM, Li L, Michaels CP, Stramma AM, Debroux R, Harris IB, Hayhurst Appel M, Nichols EC, Trusheim ME, Gangloff DA, Englund D, Atatüre M. Photonic Indistinguishability of the Tin-Vacancy Center in Nanostructured Diamond. Phys Rev Lett 2022; 129:173603. [PMID: 36332262 DOI: 10.1103/physrevlett.129.173603] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2022] [Accepted: 09/28/2022] [Indexed: 06/16/2023]
Abstract
Tin-vacancy centers in diamond are promising spin-photon interfaces owing to their high quantum efficiency, large Debye-Waller factor, and compatibility with photonic nanostructuring. Benchmarking their single-photon indistinguishability is a key challenge for future applications. Here, we report the generation of single photons with 99.7_{-2.5}^{+0.3}% purity and 63(9)% indistinguishability from a resonantly excited tin-vacancy center in a single-mode waveguide. We obtain quantum control of the optical transition with 1.71(1)-ns-long π pulses of 77.1(8)% fidelity and show it is spectrally stable over 100 ms. A modest Purcell enhancement factor of 12 would enhance the indistinguishability to 95%.
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Affiliation(s)
- Jesús Arjona Martínez
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Ryan A Parker
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Kevin C Chen
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Carola M Purser
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Linsen Li
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Cathryn P Michaels
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Alexander M Stramma
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Romain Debroux
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Isaac B Harris
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Martin Hayhurst Appel
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Eleanor C Nichols
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Matthew E Trusheim
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Dorian A Gangloff
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
- Department of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United Kingdom
| | - Dirk Englund
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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15
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Sludds A, Bandyopadhyay S, Chen Z, Zhong Z, Cochrane J, Bernstein L, Bunandar D, Dixon PB, Hamilton SA, Streshinsky M, Novack A, Baehr-Jones T, Hochberg M, Ghobadi M, Hamerly R, Englund D. Delocalized photonic deep learning on the internet's edge. Science 2022; 378:270-276. [PMID: 36264813 DOI: 10.1126/science.abq8271] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
Advanced machine learning models are currently impossible to run on edge devices such as smart sensors and unmanned aerial vehicles owing to constraints on power, processing, and memory. We introduce an approach to machine learning inference based on delocalized analog processing across networks. In this approach, named Netcast, cloud-based "smart transceivers" stream weight data to edge devices, enabling ultraefficient photonic inference. We demonstrate image recognition at ultralow optical energy of 40 attojoules per multiply (<1 photon per multiply) at 98.8% (93%) classification accuracy. We reproduce this performance in a Boston-area field trial over 86 kilometers of deployed optical fiber, wavelength multiplexed over 3 terahertz of optical bandwidth. Netcast allows milliwatt-class edge devices with minimal memory and processing to compute at teraFLOPS rates reserved for high-power (>100 watts) cloud computers.
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Affiliation(s)
- Alexander Sludds
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Saumil Bandyopadhyay
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Zaijun Chen
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Zhizhen Zhong
- Computer Science and Artificial Intelligence Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Jared Cochrane
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02421, USA
| | - Liane Bernstein
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Darius Bunandar
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - P Ben Dixon
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02421, USA
| | - Scott A Hamilton
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02421, USA
| | | | - Ari Novack
- Nokia Corporation, New York, NY 10016, USA
| | | | | | - Manya Ghobadi
- Computer Science and Artificial Intelligence Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Ryan Hamerly
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Physics and Informatics Laboratories, NTT Research Inc., Sunnyvale, CA 94085, USA
| | - Dirk Englund
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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16
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Tang R, Okano M, Toprasertpong K, Takagi S, Englund D, Takenaka M. Two-layer integrated photonic architectures with multiport photodetectors for high-fidelity and energy-efficient matrix multiplications. Opt Express 2022; 30:33940-33954. [PMID: 36242418 DOI: 10.1364/oe.457258] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2022] [Accepted: 08/25/2022] [Indexed: 06/16/2023]
Abstract
Photonic integrated circuits (PICs) are emerging as a promising tool for accelerating matrix multiplications in deep learning. Previous PIC architectures, primarily focusing on the matrix-vector multiplication (MVM), have large hardware errors that increase with the device scale. In this work, we propose a novel PIC architecture for MVM, which features an intrinsically small hardware error that does not increase with the device scale. Moreover, we further develop this concept and propose a PIC architecture for the general matrix-matrix multiplication (GEMM), which allows the GEMM to be directly performed on a photonic chip with a high energy efficiency unattainable by parallel or sequential MVMs. This work provides a promising approach to realize a high fidelity and high energy efficiency optical computing platform.
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17
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Larocque H, Englund D. Universal linear optics by programmable multimode interference. Opt Express 2021; 29:38257-38267. [PMID: 34808881 DOI: 10.1364/oe.439341] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/04/2021] [Accepted: 10/20/2021] [Indexed: 06/13/2023]
Abstract
We introduce a constructive algorithm for universal linear electromagnetic transformations between the N input and N output modes of a dielectric slab. The approach uses out-of-plane phase modulation programmed down to N2 degrees of freedom. The total area of these modulators equals that of the entire slab: our scheme makes optimal use of the available area for optical modulation. We also present error correction schemes that enable high-fidelity unitary transformations at large N. This "programmable multimode interferometer" (ProMMI) thus translates the algorithmic simplicity of Mach-Zehnder meshes into a holographically programmed slab, yielding DoF-limited compactness and error tolerance while eliminating the dominant sidewall-related optical losses and directional-coupler-related patterning challenges.
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18
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Aamir MA, Moore JN, Lu X, Seifert P, Englund D, Fong KC, Efetov DK. Ultrasensitive Calorimetric Measurements of the Electronic Heat Capacity of Graphene. Nano Lett 2021; 21:5330-5337. [PMID: 34101476 DOI: 10.1021/acs.nanolett.1c01553] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Heat capacity is an invaluable quantity in condensed matter physics and yet has been completely inaccessible in two-dimensional (2D) van der Waals (vdW) materials, owing to their ultrafast thermal relaxation times and the lack of suitable nanoscale thermometers. Here, we demonstrate a novel thermal relaxation calorimetry scheme that allows the first measurements of the electronic heat capacity of graphene. It is enabled by combining a radio frequency Johnson noise thermometer, which can measure the electronic temperature with a sensitivity of ∼20 mK/Hz1/2, and a photomixed optical heater that modulates Te with a frequency of up to Ω = 0.2 THz. This allows record sensitive measurements of the electronic heat capacity Ce < 10 -19 J/K and the fastest measurement of electronic thermal relaxation time τe < 10 -12 s yet achieved by a calorimeter. These features advance heat capacity metrology into the realm of nanoscale and low-dimensional systems and provide an avenue for the investigation of their thermodynamic quantities.
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Affiliation(s)
- Mohammed Ali Aamir
- ICFO, Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - John N Moore
- ICFO, Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Xiaobo Lu
- ICFO, Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Paul Seifert
- ICFO, Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Dirk Englund
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Kin Chung Fong
- Quantum Information Processing Group, Raytheon BBN Technologies, Cambridge, Massachusetts 02138, United States
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Dmitri K Efetov
- ICFO, Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
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19
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Li L, Choi H, Heuck M, Englund D. Field-based design of a resonant dielectric antenna for coherent spin-photon interfaces. Opt Express 2021; 29:16469-16476. [PMID: 34154209 DOI: 10.1364/oe.419773] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2021] [Accepted: 04/19/2021] [Indexed: 06/13/2023]
Abstract
We propose a field-based design for dielectric antennas to interface diamond color centers in dielectric membranes with a Gaussian propagating far field. This antenna design enables an efficient spin-photon interface with a Purcell factor exceeding 400 and a 93% mode overlap to a 0.4 numerical aperture far-field Gaussian mode. The antenna design with the back reflector is robust to fabrication imperfections, such as variations in the dimensions of the dielectric perturbations and the emitter dipole location. The field-based dielectric antenna design provides an efficient free-space interface for closely packed arrays of quantum memories for multiplexed quantum repeaters, arrayed quantum sensors, and modular quantum computers.
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20
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Walsh ED, Jung W, Lee GH, Efetov DK, Wu BI, Huang KF, Ohki TA, Taniguchi T, Watanabe K, Kim P, Englund D, Fong KC. Josephson junction infrared single-photon detector. Science 2021; 372:409-412. [PMID: 33888641 DOI: 10.1126/science.abf5539] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2020] [Accepted: 03/22/2021] [Indexed: 11/02/2022]
Abstract
Josephson junctions are superconducting devices used as high-sensitivity magnetometers and voltage amplifiers as well as the basis of high-performance cryogenic computers and superconducting quantum computers. Although device performance can be degraded by the generation of quasiparticles formed from broken Cooper pairs, this phenomenon also opens opportunities to sensitively detect electromagnetic radiation. We demonstrate single near-infrared photon detection by coupling photons to the localized surface plasmons of a graphene-based Josephson junction. Using the photon-induced switching statistics of the current-biased device, we reveal the critical role of quasiparticles generated by the absorbed photon in the detection mechanism. The photon sensitivity will enable a high-speed, low-power optical interconnect for future superconducting computing architectures.
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Affiliation(s)
- Evan D Walsh
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA
| | - Woochan Jung
- Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea
| | - Gil-Ho Lee
- Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea.,Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - Dmitri K Efetov
- ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels (Barcelona), Spain
| | - Bae-Ian Wu
- Air Force Research Laboratory, Wright-Patterson AFB, OH 45433, USA
| | - K-F Huang
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - Thomas A Ohki
- Raytheon BBN Technologies, Quantum Engineering and Computing Group Cambridge, MA 02138, USA
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Philip Kim
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - Dirk Englund
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Kin Chung Fong
- Raytheon BBN Technologies, Quantum Engineering and Computing Group Cambridge, MA 02138, USA.
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21
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Rivera P, He M, Kim B, Liu S, Rubio-Verdú C, Moon H, Mennel L, Rhodes DA, Yu H, Taniguchi T, Watanabe K, Yan J, Mandrus DG, Dery H, Pasupathy A, Englund D, Hone J, Yao W, Xu X. Intrinsic donor-bound excitons in ultraclean monolayer semiconductors. Nat Commun 2021; 12:871. [PMID: 33558508 PMCID: PMC7870970 DOI: 10.1038/s41467-021-21158-8] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/18/2020] [Accepted: 01/11/2021] [Indexed: 01/30/2023] Open
Abstract
The monolayer transition metal dichalcogenides are an emergent semiconductor platform exhibiting rich excitonic physics with coupled spin-valley degree of freedom and optical addressability. Here, we report a new series of low energy excitonic emission lines in the photoluminescence spectrum of ultraclean monolayer WSe2. These excitonic satellites are composed of three major peaks with energy separations matching known phonons, and appear only with electron doping. They possess homogenous spatial and spectral distribution, strong power saturation, and anomalously long population (>6 µs) and polarization lifetimes (>100 ns). Resonant excitation of the free inter- and intravalley bright trions leads to opposite optical orientation of the satellites, while excitation of the free dark trion resonance suppresses the satellites' photoluminescence. Defect-controlled crystal synthesis and scanning tunneling microscopy measurements provide corroboration that these features are dark excitons bound to dilute donors, along with associated phonon replicas. Our work opens opportunities to engineer homogenous single emitters and explore collective quantum optical phenomena using intrinsic donor-bound excitons in ultraclean 2D semiconductors.
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Affiliation(s)
- Pasqual Rivera
- Department of Physics, University of Washington, Seattle, WA, 98195, USA
| | - Minhao He
- Department of Physics, University of Washington, Seattle, WA, 98195, USA
| | - Bumho Kim
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | - Song Liu
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | | | - Hyowon Moon
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Lukas Mennel
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Daniel A Rhodes
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | - Hongyi Yu
- Department of Physics, University of Hong Kong, and HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki, 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki, 305-0044, Japan
| | - Jiaqiang Yan
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, 37996, USA
| | - David G Mandrus
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, 37996, USA
- Department of Physics and Astronomy, University of Tennessee, Knoxville, TN, 37996, USA
| | - Hanan Dery
- Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY, 14627, USA
| | - Abhay Pasupathy
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - Dirk Englund
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA.
| | - Wang Yao
- Department of Physics, University of Hong Kong, and HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China.
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, 98195, USA.
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98195, USA.
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22
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Wetzstein G, Ozcan A, Gigan S, Fan S, Englund D, Soljačić M, Denz C, Miller DAB, Psaltis D. Inference in artificial intelligence with deep optics and photonics. Nature 2020; 588:39-47. [PMID: 33268862 DOI: 10.1038/s41586-020-2973-6] [Citation(s) in RCA: 133] [Impact Index Per Article: 33.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/28/2019] [Accepted: 08/20/2020] [Indexed: 12/30/2022]
Abstract
Artificial intelligence tasks across numerous applications require accelerators for fast and low-power execution. Optical computing systems may be able to meet these domain-specific needs but, despite half a century of research, general-purpose optical computing systems have yet to mature into a practical technology. Artificial intelligence inference, however, especially for visual computing applications, may offer opportunities for inference based on optical and photonic systems. In this Perspective, we review recent work on optical computing for artificial intelligence applications and discuss its promise and challenges.
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Affiliation(s)
| | - Aydogan Ozcan
- University of California, Los Angeles, Los Angeles, CA, USA
| | - Sylvain Gigan
- Laboratoire Kastler Brossel, Sorbonne Université, École Normale Supérieure, Collège de France, CNRS UMR 8552, Paris, France
| | | | - Dirk Englund
- Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Marin Soljačić
- Massachusetts Institute of Technology, Cambridge, MA, USA
| | | | | | - Demetri Psaltis
- École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
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23
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Bogaerts W, Pérez D, Capmany J, Miller DAB, Poon J, Englund D, Morichetti F, Melloni A. Programmable photonic circuits. Nature 2020; 586:207-216. [PMID: 33028997 DOI: 10.1038/s41586-020-2764-0] [Citation(s) in RCA: 156] [Impact Index Per Article: 39.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/17/2020] [Accepted: 07/10/2020] [Indexed: 11/09/2022]
Abstract
The growing maturity of integrated photonic technology makes it possible to build increasingly large and complex photonic circuits on the surface of a chip. Today, most of these circuits are designed for a specific application, but the increase in complexity has introduced a generation of photonic circuits that can be programmed using software for a wide variety of functions through a mesh of on-chip waveguides, tunable beam couplers and optical phase shifters. Here we discuss the state of this emerging technology, including recent developments in photonic building blocks and circuit architectures, as well as electronic control and programming strategies. We cover possible applications in linear matrix operations, quantum information processing and microwave photonics, and examine how these generic chips can accelerate the development of future photonic circuits by providing a higher-level platform for prototyping novel optical functionalities without the need for custom chip fabrication.
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Affiliation(s)
- Wim Bogaerts
- IMEC, Department of Information Technology, Ghent University, Ghent, Belgium. .,Center of Nano- and Biophotonics, Ghent University, Ghent, Belgium.
| | - Daniel Pérez
- Universitat Politècnica València, ITEAM Research Institute, Valencia, Spain.,iPronics, Programmable Photonics, Valencia, Spain
| | - José Capmany
- Universitat Politècnica València, ITEAM Research Institute, Valencia, Spain.,iPronics, Programmable Photonics, Valencia, Spain
| | | | - Joyce Poon
- Max Planck Institute of Microstructure Physics, Halle, Germany.,Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada
| | - Dirk Englund
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Francesco Morichetti
- Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milan, Italy
| | - Andrea Melloni
- Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milan, Italy
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24
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Castilla S, Vangelidis I, Pusapati VV, Goldstein J, Autore M, Slipchenko T, Rajendran K, Kim S, Watanabe K, Taniguchi T, Martín-Moreno L, Englund D, Tielrooij KJ, Hillenbrand R, Lidorikis E, Koppens FHL. Plasmonic antenna coupling to hyperbolic phonon-polaritons for sensitive and fast mid-infrared photodetection with graphene. Nat Commun 2020; 11:4872. [PMID: 32978380 PMCID: PMC7519130 DOI: 10.1038/s41467-020-18544-z] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/04/2020] [Accepted: 08/24/2020] [Indexed: 11/09/2022] Open
Abstract
Integrating and manipulating the nano-optoelectronic properties of Van der Waals heterostructures can enable unprecedented platforms for photodetection and sensing. The main challenge of infrared photodetectors is to funnel the light into a small nanoscale active area and efficiently convert it into an electrical signal. Here, we overcome all of those challenges in one device, by efficient coupling of a plasmonic antenna to hyperbolic phonon-polaritons in hexagonal-BN to highly concentrate mid-infrared light into a graphene pn-junction. We balance the interplay of the absorption, electrical and thermal conductivity of graphene via the device geometry. This approach yields remarkable device performance featuring room temperature high sensitivity (NEP of 82 pW[Formula: see text]) and fast rise time of 17 nanoseconds (setup-limited), among others, hence achieving a combination currently not present in the state-of-the-art graphene and commercial mid-infrared detectors. We also develop a multiphysics model that shows very good quantitative agreement with our experimental results and reveals the different contributions to our photoresponse, thus paving the way for further improvement of these types of photodetectors even beyond mid-infrared range.
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Affiliation(s)
- Sebastián Castilla
- ICFO - Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona, 08860, Spain
| | - Ioannis Vangelidis
- Department of Materials Science and Engineering, University of Ioannina, Ioannina, 45110, Greece
| | - Varun-Varma Pusapati
- ICFO - Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona, 08860, Spain
| | - Jordan Goldstein
- Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Marta Autore
- CIC nanoGUNE BRTA, Donostia-San Sebastián, 20018, Spain
| | - Tetiana Slipchenko
- Instituto de Ciencia de Materiales de Aragón and Departamento de Física de la Materia Condensada, CSIC-Universidad de Zaragoza, Zaragoza, 50009, Spain
| | - Khannan Rajendran
- ICFO - Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona, 08860, Spain
| | - Seyoon Kim
- ICFO - Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona, 08860, Spain
| | - Kenji Watanabe
- Advanced Materials Laboratory, National Institute for Material Science, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Advanced Materials Laboratory, National Institute for Material Science, Tsukuba, 305-0044, Japan
| | - Luis Martín-Moreno
- Instituto de Ciencia de Materiales de Aragón and Departamento de Física de la Materia Condensada, CSIC-Universidad de Zaragoza, Zaragoza, 50009, Spain
| | - Dirk Englund
- Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Klaas-Jan Tielrooij
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, Barcelona, 08193, Spain
| | - Rainer Hillenbrand
- IKERBASQUE, Basque Foundation for Science, Bilbao, 48013, Spain.,CIC nanoGUNE BRTA and Department of Electricity and Electronics, UPV/EHU, Donostia-San Sebastián, 20018, Spain
| | - Elefterios Lidorikis
- Department of Materials Science and Engineering, University of Ioannina, Ioannina, 45110, Greece. .,University Research Center of Ioannina (URCI), Institute of Materials Science and Computing, Ioannina, 45110, Greece.
| | - Frank H L Koppens
- ICFO - Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona, 08860, Spain. .,ICREA - Institució Catalana de Recerca i Estudis Avançats, Barcelona, 08010, Spain.
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25
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Moon H, Grosso G, Chakraborty C, Peng C, Taniguchi T, Watanabe K, Englund D. Dynamic Exciton Funneling by Local Strain Control in a Monolayer Semiconductor. Nano Lett 2020; 20:6791-6797. [PMID: 32790415 DOI: 10.1021/acs.nanolett.0c02757] [Citation(s) in RCA: 34] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The ability to control excitons in semiconductors underlies numerous proposed applications, from excitonic circuits to energy transport. Two dimensional (2D) semiconductors are particularly promising for room-temperature applications due to their large exciton binding energy and enormous stretchability. Although the strain-induced static exciton flux has been observed in predetermined structures, dynamic control of exciton flux represents an outstanding challenge. Here, we introduce a method to tune the bandgap of suspended 2D semiconductors by applying a local strain gradient with a nanoscale tip. This strain allows us to locally and reversibly shift the exciton energy and to steer the exciton flux over micrometer-scale distances. We anticipate that our result not only marks an important experimental tool but will also open a broad range of new applications from information processing to energy conversion.
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Affiliation(s)
- Hyowon Moon
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts, United States
| | - Gabriele Grosso
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York, New York, United States
- Physics Program, Graduate Center, City University of New York, New York, New York, United States
| | - Chitraleema Chakraborty
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts, United States
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts, United States
| | - Cheng Peng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts, United States
| | | | - Kenji Watanabe
- National Institute for Materials Science, Tsukuba, Ibaraki, Japan
| | - Dirk Englund
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts, United States
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26
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Wan NH, Lu TJ, Chen KC, Walsh MP, Trusheim ME, De Santis L, Bersin EA, Harris IB, Mouradian SL, Christen IR, Bielejec ES, Englund D. Large-scale integration of artificial atoms in hybrid photonic circuits. Nature 2020; 583:226-231. [DOI: 10.1038/s41586-020-2441-3] [Citation(s) in RCA: 130] [Impact Index Per Article: 32.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/13/2019] [Accepted: 04/02/2020] [Indexed: 12/24/2022]
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27
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Bhaskar MK, Riedinger R, Machielse B, Levonian DS, Nguyen CT, Knall EN, Park H, Englund D, Lončar M, Sukachev DD, Lukin MD. Experimental demonstration of memory-enhanced quantum communication. Nature 2020; 580:60-64. [PMID: 32238931 DOI: 10.1038/s41586-020-2103-5] [Citation(s) in RCA: 85] [Impact Index Per Article: 21.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/19/2019] [Accepted: 01/16/2020] [Indexed: 11/09/2022]
Abstract
The ability to communicate quantum information over long distances is of central importance in quantum science and engineering1. Although some applications of quantum communication such as secure quantum key distribution2,3 are already being successfully deployed4-7, their range is currently limited by photon losses and cannot be extended using straightforward measure-and-repeat strategies without compromising unconditional security8. Alternatively, quantum repeaters9, which utilize intermediate quantum memory nodes and error correction techniques, can extend the range of quantum channels. However, their implementation remains an outstanding challenge10-16, requiring a combination of efficient and high-fidelity quantum memories, gate operations, and measurements. Here we use a single solid-state spin memory integrated in a nanophotonic diamond resonator17-19 to implement asynchronous photonic Bell-state measurements, which are a key component of quantum repeaters. In a proof-of-principle experiment, we demonstrate high-fidelity operation that effectively enables quantum communication at a rate that surpasses the ideal loss-equivalent direct-transmission method while operating at megahertz clock speeds. These results represent a crucial step towards practical quantum repeaters and large-scale quantum networks20,21.
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Affiliation(s)
- M K Bhaskar
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - R Riedinger
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - B Machielse
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - D S Levonian
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - C T Nguyen
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - E N Knall
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA
| | - H Park
- Department of Physics, Harvard University, Cambridge, MA, USA.,Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA
| | - D Englund
- Research Laboratory of Electronics, MIT, Cambridge, MA, USA
| | - M Lončar
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA
| | - D D Sukachev
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - M D Lukin
- Department of Physics, Harvard University, Cambridge, MA, USA.
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28
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Spokoyny B, Utzat H, Moon H, Grosso G, Englund D, Bawendi MG. Effect of Spectral Diffusion on the Coherence Properties of a Single Quantum Emitter in Hexagonal Boron Nitride. J Phys Chem Lett 2020; 11:1330-1335. [PMID: 32017564 DOI: 10.1021/acs.jpclett.9b02863] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Quantum emitters capable of producing single photons on-demand with high color purity are the building blocks of emerging schemes in secure quantum communications, quantum computing, and quantum metrology. Such solid-state systems, however, are usually prone to effects of spectral diffusion (SD), i.e., fast modulation of the emission wavelength due to the presence of localized, fluctuating electric fields. Two-dimensional materials are especially vulnerable to SD by virtue of the proximity of the emitters to the outside environment. In this study we report measurements of SD in a single hexagonal boron nitride (hBN) quantum emitter on the nanosecond to second time scales using photon correlation Fourier spectroscopy. We demonstrate that the spectral diffusion dynamics can be modeled by a two-component Gaussian random jump model, suggesting multiple sources of local fluctuations. We provide a lower limit of ∼0.13 for the ratio of the emitter's coherence time (T2) to twice its radiative lifetime (2T1) when it is measured on submicrosecond time scales. These results suggest that attaining transform-limited line widths could be achieved with moderate enhancement of the radiative rate. Moreover, the complex SD dynamics identified in our work inspires further exploration of the dephasing mechanisms in hBN as a viable quantum emitter platform.
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Affiliation(s)
- Boris Spokoyny
- Department of Chemistry , Massachusetts Institute of Technology , 77 Massachusetts Avenue , Cambridge , Massachusetts 02139 , United States
| | - Hendrik Utzat
- Department of Chemistry , Massachusetts Institute of Technology , 77 Massachusetts Avenue , Cambridge , Massachusetts 02139 , United States
| | - Hyowon Moon
- Department of Electrical Engineering , Massachusetts Institute of Technology , 77 Massachusetts Avenue , Cambridge , Massachusetts 02139 , United States
| | - Gabriele Grosso
- Photonics Initiative, Advanced Science Research Center , City University of New York , 85 St. Nicholas Terrace , New York , New York 10031 , United States
| | - Dirk Englund
- Department of Electrical Engineering , Massachusetts Institute of Technology , 77 Massachusetts Avenue , Cambridge , Massachusetts 02139 , United States
| | - Moungi G Bawendi
- Department of Chemistry , Massachusetts Institute of Technology , 77 Massachusetts Avenue , Cambridge , Massachusetts 02139 , United States
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29
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Trusheim ME, Pingault B, Wan NH, Gündoğan M, De Santis L, Debroux R, Gangloff D, Purser C, Chen KC, Walsh M, Rose JJ, Becker JN, Lienhard B, Bersin E, Paradeisanos I, Wang G, Lyzwa D, Montblanch ARP, Malladi G, Bakhru H, Ferrari AC, Walmsley IA, Atatüre M, Englund D. Transform-Limited Photons From a Coherent Tin-Vacancy Spin in Diamond. Phys Rev Lett 2020; 124:023602. [PMID: 32004012 DOI: 10.1103/physrevlett.124.023602] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/19/2018] [Revised: 11/15/2019] [Indexed: 06/10/2023]
Abstract
Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical and spin spectroscopy, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving and spin-flipping transitions, characterize transition linewidths, measure electron spin lifetimes, and evaluate the spin dephasing time. We find that the optical transitions are consistent with the radiative lifetime limit even in nanofabricated structures. The spin lifetime is phonon limited with an exponential temperature scaling leading to T_{1}>10 ms, and the coherence time, T_{2}^{*} reaches the nuclear spin-bath limit upon cooling to 2.9 K. These spin properties exceed those of other inversion-symmetric color centers for which similar values require millikelvin temperatures. With a combination of coherent optical transitions and long spin coherence without dilution refrigeration, the SnV is a promising candidate for feasable and scalable quantum networking applications.
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Affiliation(s)
- Matthew E Trusheim
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Benjamin Pingault
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Noel H Wan
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Mustafa Gündoğan
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Lorenzo De Santis
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Romain Debroux
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Dorian Gangloff
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Carola Purser
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Kevin C Chen
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Michael Walsh
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Joshua J Rose
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Jonas N Becker
- Clarendon Laboratory, University of Oxford, Parks road, Oxford OX1 3PU, United Kingdom
| | - Benjamin Lienhard
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Eric Bersin
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Ioannis Paradeisanos
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Gang Wang
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Dominika Lyzwa
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Alejandro R-P Montblanch
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Girish Malladi
- College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, 257 Fuller Road, Albany, New York 12203, USA
| | - Hassaram Bakhru
- College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, 257 Fuller Road, Albany, New York 12203, USA
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Ian A Walmsley
- Clarendon Laboratory, University of Oxford, Parks road, Oxford OX1 3PU, United Kingdom
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Dirk Englund
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
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30
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Roques-Carmes C, Shen Y, Zanoci C, Prabhu M, Atieh F, Jing L, Dubček T, Mao C, Johnson MR, Čeperić V, Joannopoulos JD, Englund D, Soljačić M. Heuristic recurrent algorithms for photonic Ising machines. Nat Commun 2020; 11:249. [PMID: 31937776 PMCID: PMC6959305 DOI: 10.1038/s41467-019-14096-z] [Citation(s) in RCA: 41] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2019] [Accepted: 12/12/2019] [Indexed: 11/09/2022] Open
Abstract
The inability of conventional electronic architectures to efficiently solve large combinatorial problems motivates the development of novel computational hardware. There has been much effort toward developing application-specific hardware across many different fields of engineering, such as integrated circuits, memristors, and photonics. However, unleashing the potential of such architectures requires the development of algorithms which optimally exploit their fundamental properties. Here, we present the Photonic Recurrent Ising Sampler (PRIS), a heuristic method tailored for parallel architectures allowing fast and efficient sampling from distributions of arbitrary Ising problems. Since the PRIS relies on vector-to-fixed matrix multiplications, we suggest the implementation of the PRIS in photonic parallel networks, which realize these operations at an unprecedented speed. The PRIS provides sample solutions to the ground state of Ising models, by converging in probability to their associated Gibbs distribution. The PRIS also relies on intrinsic dynamic noise and eigenvalue dropout to find ground states more efficiently. Our work suggests speedups in heuristic methods via photonic implementations of the PRIS.
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Affiliation(s)
- Charles Roques-Carmes
- Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar Street, Cambridge, MA, 02139, USA. .,Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA.
| | - Yichen Shen
- Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA.
| | - Cristian Zanoci
- Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
| | - Mihika Prabhu
- Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar Street, Cambridge, MA, 02139, USA.,Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
| | - Fadi Atieh
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA.,Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
| | - Li Jing
- Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
| | - Tena Dubček
- Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
| | - Chenkai Mao
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA.,Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
| | - Miles R Johnson
- Department of Mathematics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
| | - Vladimir Čeperić
- Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
| | - John D Joannopoulos
- Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA.,Institute for Soldier Nanotechnologies, 500 Technology Square, Cambridge, MA, 02139, USA
| | - Dirk Englund
- Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar Street, Cambridge, MA, 02139, USA.,Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
| | - Marin Soljačić
- Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar Street, Cambridge, MA, 02139, USA.,Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
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31
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Lee C, Bunandar D, Zhang Z, Steinbrecher GR, Ben Dixon P, Wong FNC, Shapiro JH, Hamilton SA, Englund D. Large-alphabet encoding for higher-rate quantum key distribution. Opt Express 2019; 27:17539-17549. [PMID: 31252711 DOI: 10.1364/oe.27.017539] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2018] [Accepted: 05/15/2019] [Indexed: 06/09/2023]
Abstract
The manipulation of high-dimensional degrees of freedom provides new opportunities for more efficient quantum information processing. It has recently been shown that high-dimensional encoded states can provide significant advantages over binary quantum states in applications of quantum computation and quantum communication. In particular, high-dimensional quantum key distribution enables higher secret-key generation rates under practical limitations of detectors or light sources, as well as greater error tolerance. Here, we demonstrate high-dimensional quantum key distribution capabilities both in the laboratory and over a deployed fiber, using photons encoded in a high-dimensional alphabet to increase the secure information yield per detected photon. By adjusting the alphabet size, it is possible to mitigate the effects of receiver bottlenecks and optimize the secret-key rates for different channel losses. This work presents a strategy for achieving higher secret-key rates in receiver-limited scenarios and marks an important step toward high-dimensional quantum communication in deployed fiber networks.
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32
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Choi H, Zhu D, Yoon Y, Englund D. Cascaded Cavities Boost the Indistinguishability of Imperfect Quantum Emitters. Phys Rev Lett 2019; 122:183602. [PMID: 31144870 DOI: 10.1103/physrevlett.122.183602] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2018] [Indexed: 06/09/2023]
Abstract
Recently, Grange et al. [Phys. Rev. Lett. 114, 193601 (2015)PRLTAO0031-900710.1103/PhysRevLett.114.193601] showed the possibility of single-photon generation with a high indistinguishability from a quantum emitter despite strong pure dephasing, by "funneling" emission into a photonic cavity. Here, we show that a cascaded two-cavity system can further improve the photon characteristics and greatly reduce the Q factor requirement to levels achievable with present-day technology. Our approach leverages recent advances in nanocavities with an ultrasmall mode volume and does not require ultrafast excitation of the emitter. These results were obtained by numerical and closed-form analytical models with strong emitter dephasing, representing room-temperature quantum emitters.
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Affiliation(s)
- Hyeongrak Choi
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Di Zhu
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Yoseob Yoon
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Dirk Englund
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
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33
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Hamerly R, Inagaki T, McMahon PL, Venturelli D, Marandi A, Onodera T, Ng E, Langrock C, Inaba K, Honjo T, Enbutsu K, Umeki T, Kasahara R, Utsunomiya S, Kako S, Kawarabayashi KI, Byer RL, Fejer MM, Mabuchi H, Englund D, Rieffel E, Takesue H, Yamamoto Y. Experimental investigation of performance differences between coherent Ising machines and a quantum annealer. Sci Adv 2019; 5:eaau0823. [PMID: 31139743 PMCID: PMC6534389 DOI: 10.1126/sciadv.aau0823] [Citation(s) in RCA: 42] [Impact Index Per Article: 8.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2018] [Accepted: 04/17/2019] [Indexed: 05/05/2023]
Abstract
Physical annealing systems provide heuristic approaches to solving combinatorial optimization problems. Here, we benchmark two types of annealing machines-a quantum annealer built by D-Wave Systems and measurement-feedback coherent Ising machines (CIMs) based on optical parametric oscillators-on two problem classes, the Sherrington-Kirkpatrick (SK) model and MAX-CUT. The D-Wave quantum annealer outperforms the CIMs on MAX-CUT on cubic graphs. On denser problems, however, we observe an exponential penalty for the quantum annealer [exp(-αDW N 2)] relative to CIMs [exp(-αCIM N)] for fixed anneal times, both on the SK model and on 50% edge density MAX-CUT. This leads to a several orders of magnitude time-to-solution difference for instances with over 50 vertices. An optimal-annealing time analysis is also consistent with a substantial projected performance difference. The difference in performance between the sparsely connected D-Wave machine and the fully-connected CIMs provides strong experimental support for efforts to increase the connectivity of quantum annealers.
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Affiliation(s)
- Ryan Hamerly
- Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar Street, Cambridge, MA 02139, USA
- National Institute of Informatics, Hitotsubashi 2-1-2, Chiyoda-ku, Tokyo 101-8403, Japan
- Corresponding author. (R.H.); (T.I.); (P.L.M.)
| | - Takahiro Inagaki
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- Corresponding author. (R.H.); (T.I.); (P.L.M.)
| | - Peter L. McMahon
- National Institute of Informatics, Hitotsubashi 2-1-2, Chiyoda-ku, Tokyo 101-8403, Japan
- E. L. Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
- Corresponding author. (R.H.); (T.I.); (P.L.M.)
| | - Davide Venturelli
- NASA Ames Research Center Quantum Artificial Intelligence Laboratory (QuAIL), Mail Stop 269-1, Moffett Field, CA 94035, USA
- USRA Research Institute for Advanced Computer Science (RIACS), 615 National Avenue, Mountain View, CA 94035, USA
| | - Alireza Marandi
- E. L. Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
- California Institute of Technology, Pasadena, CA 91125, USA
| | - Tatsuhiro Onodera
- E. L. Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
| | - Edwin Ng
- E. L. Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
| | - Carsten Langrock
- E. L. Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
| | - Kensuke Inaba
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Toshimori Honjo
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Koji Enbutsu
- NTT Device Technology Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Takeshi Umeki
- NTT Device Technology Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Ryoichi Kasahara
- NTT Device Technology Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Shoko Utsunomiya
- National Institute of Informatics, Hitotsubashi 2-1-2, Chiyoda-ku, Tokyo 101-8403, Japan
| | - Satoshi Kako
- National Institute of Informatics, Hitotsubashi 2-1-2, Chiyoda-ku, Tokyo 101-8403, Japan
| | - Ken-ichi Kawarabayashi
- National Institute of Informatics, Hitotsubashi 2-1-2, Chiyoda-ku, Tokyo 101-8403, Japan
| | - Robert L. Byer
- E. L. Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
| | - Martin M. Fejer
- E. L. Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
| | - Hideo Mabuchi
- E. L. Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
| | - Dirk Englund
- Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar Street, Cambridge, MA 02139, USA
| | - Eleanor Rieffel
- NASA Ames Research Center Quantum Artificial Intelligence Laboratory (QuAIL), Mail Stop 269-1, Moffett Field, CA 94035, USA
| | - Hiroki Takesue
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Yoshihisa Yamamoto
- E. L. Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
- ImPACT Program, Japan Science and Technology Agency, Gobancho 7, Chiyoda-ku, Tokyo 102-0076, Japan
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34
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Abstract
Despite linear-optical fusion (Bell measurement) being probabilistic, photonic cluster states for universal quantum computation can be prepared without feed-forward by fusing small n-photon entangled clusters, if the success probability of each fusion attempt is above a threshold, \documentclass[12pt]{minimal}
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\begin{document}$${\mathrm{\lambda }}_{\mathrm{c}}^{(n)}$$\end{document}λc(n). We prove a general bound \documentclass[12pt]{minimal}
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\begin{document}$${\mathrm{\lambda }}_{\mathrm{c}}^{(n)} \ge 1/(n - 1)$$\end{document}λc(n)≥1∕(n-1), and develop a conceptual method to construct long-range-connected clusters where \documentclass[12pt]{minimal}
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\begin{document}$${\mathrm{\lambda }}_{\mathrm{c}}^{(n)}$$\end{document}λc(n) becomes the bond percolation threshold of a logical graph. This mapping lets us find constructions that require lower fusion success probabilities than currently known, and settle a heretofore open question by showing that a universal cluster state can be created by fusing 3-photon clusters over a 2D lattice with a fusion success probability that is achievable with linear optics and single photons, making this attractive for integrated-photonic realizations. Universal cluster states for quantum computing can be assembled without feed-forward by fusing n-photon clusters with linear optics if the fusion success probability is above a threshold p. The authors bound p in terms of n and provide protocols for n = 3 clusters requiring lower fusion probability than before.
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Affiliation(s)
- Mihir Pant
- Department of Electrical Engineering and Computer Science, MIT, Cambridge, MA, 02139, USA. .,Quantum Information Processing group, Raytheon BBN Technologies, 10 Moulton Street, Cambridge, MA, 02138, USA.
| | - Don Towsley
- College of Information and Computer Sciences, University of Massachusetts, Amherst, MA, 01003, USA
| | - Dirk Englund
- Department of Electrical Engineering and Computer Science, MIT, Cambridge, MA, 02139, USA
| | - Saikat Guha
- Department of Electrical Engineering and Computer Science, MIT, Cambridge, MA, 02139, USA.,Quantum Information Processing group, Raytheon BBN Technologies, 10 Moulton Street, Cambridge, MA, 02138, USA.,College of Optical Sciences, University of Arizona, 1630 E University Blvd, Tucson, AZ, 85719, USA
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35
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Shiue RJ, Gao Y, Tan C, Peng C, Zheng J, Efetov DK, Kim YD, Hone J, Englund D. Thermal radiation control from hot graphene electrons coupled to a photonic crystal nanocavity. Nat Commun 2019; 10:109. [PMID: 30631048 PMCID: PMC6328560 DOI: 10.1038/s41467-018-08047-3] [Citation(s) in RCA: 28] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/16/2018] [Accepted: 11/19/2018] [Indexed: 11/09/2022] Open
Abstract
Controlling thermal radiation is central in a range of applications including sensing, energy harvesting, and lighting. The thermal emission spectrum can be strongly modified through the electromagnetic local density of states (EM LDOS) in nanoscale-patterned metals and semiconductors. However, these materials become unstable at high temperature, preventing improvements in radiative efficiency and applications such as thermophotovoltaics. Here, we report stable high-temperature thermal emission based on hot electrons (>2000 K) in graphene coupled to a photonic crystal nanocavity, which strongly modifies the EM LDOS. The electron bath in graphene is highly decoupled from lattice phonons, allowing a comparatively cool temperature (700 K) of the photonic crystal nanocavity. This thermal decoupling of hot electrons from the LDOS-engineered substrate opens a broad design space for thermal emission control that would be challenging or impossible with heated nanoscale-patterned metals or semiconductor materials. Efficient control of thermal radiation is at the core of device design for a variety of applications. Here, the authors demonstrate a high-temperature thermal emitter with selective emission from a graphene-silicon photonic crystal nanocavity.
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Affiliation(s)
- Ren-Jye Shiue
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Yuanda Gao
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | - Cheng Tan
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA.,Department of Electrical Engineering, Columbia University, New York, NY, 10027, USA
| | - Cheng Peng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Jiabao Zheng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.,Department of Electrical Engineering, Columbia University, New York, NY, 10027, USA
| | - Dmitri K Efetov
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, 08860, Castelldefels, Barcelona, Spain
| | - Young Duck Kim
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA.,Department of Physics, Kyung Hee University, Seoul, 02447, Republic of Korea
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | - Dirk Englund
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
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36
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Grosicki G, Englund D, Price L, Iwai M, Kashiwa M, Liu C, Reid K, Fielding R. SKELETAL MUSCLE FATIGABILITY PREDICTS PHYSICAL FUNCTION IN MOBILITY-LIMITED OLDER ADULTS. Innov Aging 2018. [DOI: 10.1093/geroni/igy023.123] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022] Open
Affiliation(s)
- G Grosicki
- Nutrition, Exercise Physiology and Sarcopenia Laboratory, Jean Mayer USDA Human Nutrition Research Center on Aging, Tufts University, Boston, MA, USA
| | - D Englund
- Nutrition, Exercise Physiology and Sarcopenia Laboratory, Jean Mayer USDA Human Nutrition Research Center on Aging, Tufts University, Boston, MA, USA
| | - L Price
- The Institute for Clinical Research and Health Policy Studies, Tufts Medical Center; Tufts Clinical and Translational Science Institute, Tufts University; Boston, MA, USA
| | - M Iwai
- Astellas Pharma Inc., Itabashi ku, Tokyo, Japan
| | - M Kashiwa
- Astellas Pharma Inc., Itabashi ku, Tokyo, Japan
| | - C Liu
- Nutrition, Exercise Physiology and Sarcopenia Laboratory, Jean Mayer USDA Human Nutrition Research Center on Aging, Tufts University; Geriatrics Section, Department of Medicine, Boston Medical Center, Boston, MA, USA
| | - K Reid
- Nutrition, Exercise Physiology and Sarcopenia Laboratory, Jean Mayer USDA Human Nutrition Research Center on Aging, Tufts University, Boston, MA, USA
| | - R Fielding
- Nutrition, Exercise Physiology and Sarcopenia Laboratory, Jean Mayer USDA Human Nutrition Research Center on Aging, Tufts University, Boston, MA, USA
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Efetov DK, Shiue RJ, Gao Y, Skinner B, Walsh ED, Choi H, Zheng J, Tan C, Grosso G, Peng C, Hone J, Fong KC, Englund D. Fast thermal relaxation in cavity-coupled graphene bolometers with a Johnson noise read-out. Nat Nanotechnol 2018; 13:797-801. [PMID: 29892017 DOI: 10.1038/s41565-018-0169-0] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2017] [Accepted: 05/15/2018] [Indexed: 05/13/2023]
Abstract
High sensitivity, fast response time and strong light absorption are the most important metrics for infrared sensing and imaging. The trade-off between these characteristics remains the primary challenge in bolometry. Graphene with its unique combination of a record small electronic heat capacity and a weak electron-phonon coupling has emerged as a sensitive bolometric medium that allows for high intrinsic bandwidths1-3. Moreover, the material's light absorption can be enhanced to near unity by integration into photonic structures. Here, we introduce an integrated hot-electron bolometer based on Johnson noise readout of electrons in ultra-clean hexagonal-boron-nitride-encapsulated graphene, which is critically coupled to incident radiation through a photonic nanocavity with Q = 900. The device operates at telecom wavelengths and shows an enhanced bolometric response at charge neutrality. At 5 K, we obtain a noise equivalent power of about 10 pW Hz-1/2, a record fast thermal relaxation time, <35 ps, and an improved light absorption. However the device can operate even above 300 K with reduced sensitivity. We work out the performance mechanisms and limits of the graphene bolometer and give important insights towards the potential development of practical applications.
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Affiliation(s)
- Dmitri K Efetov
- ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Barcelona, Spain.
| | - Ren-Jye Shiue
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yuanda Gao
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Brian Skinner
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Evan D Walsh
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Hyeongrak Choi
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jiabao Zheng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Cheng Tan
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Gabriele Grosso
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Cheng Peng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Kin Chung Fong
- Raytheon BBN Technologies, Quantum Information Processing Group, Cambridge, MA, USA
| | - Dirk Englund
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
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38
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Zhu D, Zhao QY, Choi H, Lu TJ, Dane AE, Englund D, Berggren KK. A scalable multi-photon coincidence detector based on superconducting nanowires. Nat Nanotechnol 2018; 13:596-601. [PMID: 29867085 DOI: 10.1038/s41565-018-0160-9] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2017] [Accepted: 05/03/2018] [Indexed: 06/08/2023]
Abstract
Coincidence detection of single photons is crucial in numerous quantum technologies and usually requires multiple time-resolved single-photon detectors. However, the electronic readout becomes a major challenge when the measurement basis scales to large numbers of spatial modes. Here, we address this problem by introducing a two-terminal coincidence detector that enables scalable readout of an array of detector segments based on superconducting nanowire microstrip transmission line. Exploiting timing logic, we demonstrate a sixteen-element detector that resolves all 136 possible single-photon and two-photon coincidence events. We further explore the pulse shapes of the detector output and resolve up to four-photon events in a four-element device, giving the detector photon-number-resolving capability. This new detector architecture and operating scheme will be particularly useful for multi-photon coincidence detection in large-scale photonic integrated circuits.
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Affiliation(s)
- Di Zhu
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Qing-Yuan Zhao
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu, China.
| | - Hyeongrak Choi
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Tsung-Ju Lu
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Andrew E Dane
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Dirk Englund
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Karl K Berggren
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
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Wan NH, Shields BJ, Kim D, Mouradian S, Lienhard B, Walsh M, Bakhru H, Schröder T, Englund D. Efficient Extraction of Light from a Nitrogen-Vacancy Center in a Diamond Parabolic Reflector. Nano Lett 2018; 18:2787-2793. [PMID: 29601205 DOI: 10.1021/acs.nanolett.7b04684] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Quantum emitters in solids are being developed for a range of quantum technologies, including quantum networks, computing, and sensing. However, a remaining challenge is the poor photon collection due to the high refractive index of most host materials. Here we overcome this limitation by introducing monolithic parabolic reflectors as an efficient geometry for broadband photon extraction from quantum emitter and experimentally demonstrate this device for the nitrogen-vacancy (NV) center in diamond. Simulations indicate a photon collection efficiency exceeding 75% across the visible spectrum and experimental devices, fabricated using a high-throughput gray scale lithography process, demonstrating a photon extraction efficiency of (41 ± 5)%. This device enables a raw experimental detection efficiency of (12 ± 1)% with fluorescence detection rates as high as (4.114 ± 0.003) × 106 counts per second (cps) from a single NV center. Enabled by our deterministic emitter localization and fabrication process, we find a high number of exceptional devices with an average count rate of (3.1 ± 0.9) × 106 cps.
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Affiliation(s)
- Noel H Wan
- Research Laboratory of Electronics , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
| | - Brendan J Shields
- Department of Physics , University of Basel , Klingelbergstrasse 82 , CH-4056 Basel , Switzerland
| | - Donggyu Kim
- Research Laboratory of Electronics , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
| | - Sara Mouradian
- Research Laboratory of Electronics , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
| | - Benjamin Lienhard
- Research Laboratory of Electronics , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
| | - Michael Walsh
- Research Laboratory of Electronics , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
| | - Hassaram Bakhru
- College of Nanoscale Science and Engineering , SUNY Polytechnic Institute , Albany , New York 12203 , United States
| | - Tim Schröder
- Research Laboratory of Electronics , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
| | - Dirk Englund
- Research Laboratory of Electronics , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
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40
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Lu TJ, Fanto M, Choi H, Thomas P, Steidle J, Mouradian S, Kong W, Zhu D, Moon H, Berggren K, Kim J, Soltani M, Preble S, Englund D. Aluminum nitride integrated photonics platform for the ultraviolet to visible spectrum. Opt Express 2018; 26:11147-11160. [PMID: 29716039 DOI: 10.1364/oe.26.011147] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2018] [Accepted: 04/03/2018] [Indexed: 05/20/2023]
Abstract
We demonstrate a wide-bandgap semiconductor photonics platform based on nanocrystalline aluminum nitride (AlN) on sapphire. This photonics platform guides light at low loss from the ultraviolet (UV) to the visible spectrum. We measure ring resonators with intrinsic quality factor (Q) exceeding 170,000 at 638 nm and Q >20,000 down to 369.5 nm, which shows a promising path for low-loss integrated photonics in UV and visible spectrum. This platform opens up new possibilities in integrated quantum optics with trapped ions or atom-like color centers in solids, as well as classical applications including nonlinear optics and on-chip UV-spectroscopy.
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41
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Kim YD, Gao Y, Shiue RJ, Wang L, Aslan B, Bae MH, Kim H, Seo D, Choi HJ, Kim SH, Nemilentsau A, Low T, Tan C, Efetov DK, Taniguchi T, Watanabe K, Shepard KL, Heinz TF, Englund D, Hone J. Ultrafast Graphene Light Emitters. Nano Lett 2018; 18:934-940. [PMID: 29337567 DOI: 10.1021/acs.nanolett.7b04324] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achieve light pulse generation with up to 10 GHz bandwidth across a broad spectral range from the visible to the near-infrared. The fast response results from ultrafast charge-carrier dynamics in graphene and weak electron-acoustic phonon-mediated coupling between the electronic and lattice degrees of freedom. We also find that encapsulating graphene with hexagonal boron nitride (hBN) layers strongly modifies the emission spectrum by changing the local optical density of states, thus providing up to 460% enhancement compared to the gray-body thermal radiation for a broad peak centered at 720 nm. Furthermore, the hBN encapsulation layers permit stable and bright visible thermal radiation with electronic temperatures up to 2000 K under ambient conditions as well as efficient ultrafast electronic cooling via near-field coupling to hybrid polaritonic modes under electrical excitation. These high-speed graphene light emitters provide a promising path for on-chip light sources for optical communications and other optoelectronic applications.
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Affiliation(s)
- Young Duck Kim
- Department of Physics, Kyung Hee University , Seoul 02447, Republic of Korea
| | | | - Ren-Jye Shiue
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States
| | - Lei Wang
- Kavli Institute at Cornell for Nanoscale Science , Ithaca, New York 14853, United States
| | - Burak Aslan
- Department of Applied Physics, Stanford University , Stanford, California 94305, United States
- SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States
| | - Myung-Ho Bae
- Korea Research Institute of Standards and Science , Daejeon 34113, Republic of Korea
- Department of Nano Science, University of Science and Technology , Daejeon 34113, Republic of Korea
| | | | - Dongjea Seo
- Department of Materials Science and Engineering, Yonsei University , Seoul 120-749, Republic of Korea
| | - Heon-Jin Choi
- Department of Materials Science and Engineering, Yonsei University , Seoul 120-749, Republic of Korea
| | - Suk Hyun Kim
- Department of Applied Physics, Stanford University , Stanford, California 94305, United States
- SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States
| | - Andrei Nemilentsau
- Department of Electrical and Computer Engineering, University of Minnesota , Minneapolis, Minnesota 55455, United States
| | - Tony Low
- Department of Electrical and Computer Engineering, University of Minnesota , Minneapolis, Minnesota 55455, United States
| | | | - Dmitri K Efetov
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology , 08860 Castelldefels, Barcelona, Spain
| | - Takashi Taniguchi
- National Institute for Materials Science , 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- National Institute for Materials Science , 1-1 Namiki, Tsukuba 305-0044, Japan
| | | | - Tony F Heinz
- Department of Applied Physics, Stanford University , Stanford, California 94305, United States
- SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States
| | - Dirk Englund
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States
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Karamlou A, Trusheim ME, Englund D. Metal-dielectric antennas for efficient photon collection from diamond color centers. Opt Express 2018; 26:3341-3352. [PMID: 29401863 DOI: 10.1364/oe.26.003341] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2017] [Accepted: 01/23/2018] [Indexed: 05/24/2023]
Abstract
A central challenge in quantum technologies based on atom-like defects is the efficient collection of the emitter's fluorescence. Optical antennas are appealing as they offer directional emission together with spontaneous emission rate enhancement across a broad emitter spectrum. In this work, we introduce and optimize metal-dielectric nanoantenna designs recessed into a diamond substrate and aligned with quantum emitters. We analyze tradeoffs between external quantum efficiency, collection efficiency, radiative Purcell factor, and overall collected photon rate. This analysis shows that an optimized metal-dielectric hybrid structure can increase the collected photon rate from a nitrogen vacancy center by over two orders of magnitude compared to a bare emitter.
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Marseglia L, Saha K, Ajoy A, Schröder T, Englund D, Jelezko F, Walsworth R, Pacheco JL, Perry DL, Bielejec ES, Cappellaro P. Bright nanowire single photon source based on SiV centers in diamond. Opt Express 2018; 26:80-89. [PMID: 29328295 DOI: 10.1364/oe.26.000080] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/16/2017] [Accepted: 12/18/2017] [Indexed: 06/07/2023]
Abstract
The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV-) color center in diamond is a possible candidate for such a single photon source. However, due to the high refraction index mismatch to air, color centers in diamond typically exhibit low photon out-coupling. An additional shortcoming is due to the random localization of native defects in the diamond sample. Here we demonstrate deterministic implantation of Si ions with high conversion efficiency to single SiV- centers, targeted to fabricated nanowires. The co-localization of single SiV- centers with the nanostructures yields a ten times higher light coupling efficiency than for single SiV- centers in bulk diamond. This enhanced photon out-coupling, together with the intrinsic scalability of the SiV- creation method, enables a new class of devices for integrated photonics and quantum science.
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Kim JH, Aghaeimeibodi S, Richardson CJK, Leavitt RP, Englund D, Waks E. Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip. Nano Lett 2017; 17:7394-7400. [PMID: 29131963 DOI: 10.1021/acs.nanolett.7b03220] [Citation(s) in RCA: 45] [Impact Index Per Article: 6.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.
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Affiliation(s)
- Je-Hyung Kim
- Department of Electrical and Computer Engineering and Institute for Research in Electronics and Applied Physics, University of Maryland , College Park, Maryland 20742, United States
- Department of Physics, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919, Republic of Korea
| | - Shahriar Aghaeimeibodi
- Department of Electrical and Computer Engineering and Institute for Research in Electronics and Applied Physics, University of Maryland , College Park, Maryland 20742, United States
| | | | - Richard P Leavitt
- Laboratory for Physical Sciences, University of Maryland , College Park, Maryland 20740, United States
| | - Dirk Englund
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States
| | - Edo Waks
- Department of Electrical and Computer Engineering and Institute for Research in Electronics and Applied Physics, University of Maryland , College Park, Maryland 20742, United States
- Joint Quantum Institute, University of Maryland and the National Institute of Standards and Technology , College Park, Maryland 20742, United States
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Bie YQ, Grosso G, Heuck M, Furchi MM, Cao Y, Zheng J, Bunandar D, Navarro-Moratalla E, Zhou L, Efetov DK, Taniguchi T, Watanabe K, Kong J, Englund D, Jarillo-Herrero P. A MoTe 2-based light-emitting diode and photodetector for silicon photonic integrated circuits. Nat Nanotechnol 2017; 12:1124-1129. [PMID: 29209014 DOI: 10.1038/nnano.2017.209] [Citation(s) in RCA: 138] [Impact Index Per Article: 19.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/30/2017] [Accepted: 09/06/2017] [Indexed: 05/06/2023]
Abstract
One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.
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Affiliation(s)
- Ya-Qing Bie
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Gabriele Grosso
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Mikkel Heuck
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Marco M Furchi
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Yuan Cao
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Jiabao Zheng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
- Department of Electrical Engineering, Columbia University, New York, New York 10027, USA
| | - Darius Bunandar
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Efren Navarro-Moratalla
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Lin Zhou
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Dmitri K Efetov
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
- ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels, Barcelona, Spain
| | - Takashi Taniguchi
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Kenji Watanabe
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Dirk Englund
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Pablo Jarillo-Herrero
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
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Fujiwara M, Neitzke O, Schröder T, Schell AW, Wolters J, Zheng J, Mouradian S, Almoktar M, Takeuchi S, Englund D, Benson O. Fiber-Coupled Diamond Micro-Waveguides toward an Efficient Quantum Interface for Spin Defect Centers. ACS Omega 2017; 2:7194-7202. [PMID: 31457298 PMCID: PMC6645309 DOI: 10.1021/acsomega.7b01223] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/22/2017] [Accepted: 10/11/2017] [Indexed: 06/10/2023]
Abstract
We report the direct integration and efficient coupling of nitrogen vacancy (NV) color centers in diamond nanophotonic structures into a fiber-based photonic architecture at cryogenic temperatures. NV centers are embedded in diamond micro-waveguides (μWGs), which are coupled to fiber tapers. Fiber tapers have low-loss connection to single-mode optical fibers and hence enable efficient integration of NV centers into optical fiber networks. We numerically optimize the parameters of the μWG-fiber-taper devices designed particularly for use in cryogenic experiments, resulting in 35.6% coupling efficiency, and experimentally demonstrate cooling of these devices to the liquid helium temperature of 4.2 K without loss of the fiber transmission. We observe sharp zero-phonon lines in the fluorescence of NV centers through the pigtailed fibers at 100 K. The optimized devices with high photon coupling efficiency and the demonstration of cooling to cryogenic temperatures are an important step to realize fiber-based quantum nanophotonic interfaces using diamond spin defect centers.
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Affiliation(s)
- Masazumi Fujiwara
- Institut
für Physik, Humboldt Universität
zu Berlin, Newtonstrasse
15, 12489 Berlin, Germany
- Department
of Chemistry, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi, Osaka 558-8585, Japan
- Research
Institute for Electronic Science, Hokkaido
University, N20W10, Kita-Ward, Sapporo 001-0020, Hokkaido, Japan
- The
Institute of Scientific and Industrial Research, Osaka University, Mihogaoka
8-1, Ibaraki, Osaka 567-0047, Japan
| | - Oliver Neitzke
- Institut
für Physik, Humboldt Universität
zu Berlin, Newtonstrasse
15, 12489 Berlin, Germany
| | - Tim Schröder
- Department
of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
- Niels Bohr
Institute, University of Copenhagen, Blegdamsvej 17, 2100 Copenhagen, Denmark
| | - Andreas W. Schell
- Institut
für Physik, Humboldt Universität
zu Berlin, Newtonstrasse
15, 12489 Berlin, Germany
| | - Janik Wolters
- Institut
für Physik, Humboldt Universität
zu Berlin, Newtonstrasse
15, 12489 Berlin, Germany
| | - Jiabao Zheng
- Department
of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Sara Mouradian
- Department
of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Mohamed Almoktar
- Research
Institute for Electronic Science, Hokkaido
University, N20W10, Kita-Ward, Sapporo 001-0020, Hokkaido, Japan
- The
Institute of Scientific and Industrial Research, Osaka University, Mihogaoka
8-1, Ibaraki, Osaka 567-0047, Japan
- Physics
Department, Assiut University, Assiut 71516, Egypt
| | - Shigeki Takeuchi
- Research
Institute for Electronic Science, Hokkaido
University, N20W10, Kita-Ward, Sapporo 001-0020, Hokkaido, Japan
- The
Institute of Scientific and Industrial Research, Osaka University, Mihogaoka
8-1, Ibaraki, Osaka 567-0047, Japan
- Department
of Electronic Science and Engineering, Kyoto
University, Kyoto Daigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
| | - Dirk Englund
- Department
of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Oliver Benson
- Institut
für Physik, Humboldt Universität
zu Berlin, Newtonstrasse
15, 12489 Berlin, Germany
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47
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Grosso G, Moon H, Lienhard B, Ali S, Efetov DK, Furchi MM, Jarillo-Herrero P, Ford MJ, Aharonovich I, Englund D. Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride. Nat Commun 2017; 8:705. [PMID: 28951591 PMCID: PMC5615041 DOI: 10.1038/s41467-017-00810-2] [Citation(s) in RCA: 136] [Impact Index Per Article: 19.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/20/2017] [Accepted: 07/28/2017] [Indexed: 12/24/2022] Open
Abstract
Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission presented open challenges. Here, we demonstrate that strain control allows spectral tunability of hBN single photon emitters over 6 meV, and material processing sharply improves the single photon purity. We observe high single photon count rates exceeding 7 × 106 counts per second at saturation, after correcting for uncorrelated photon background. Furthermore, these emitters are stable to material transfer to other substrates. High-purity and photostable single photon emission at room temperature, together with spectral tunability and transferability, opens the door to scalable integration of high-quality quantum emitters in photonic quantum technologies.Inhomogeneous spectral distribution and multi-photon emission are currently hindering the use of defects in layered hBN as reliable single photon emitters. Here, the authors demonstrate strain-controlled wavelength tuning and increased single photon purity through suitable material processing.
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Affiliation(s)
- Gabriele Grosso
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
| | - Hyowon Moon
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Benjamin Lienhard
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Sajid Ali
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Dmitri K Efetov
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Marco M Furchi
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Pablo Jarillo-Herrero
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Michael J Ford
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Dirk Englund
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
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48
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Notaros J, Mower J, Heuck M, Lupo C, Harris NC, Steinbrecher GR, Bunandar D, Baehr-Jones T, Hochberg M, Lloyd S, Englund D. Programmable dispersion on a photonic integrated circuit for classical and quantum applications. Opt Express 2017; 25:21275-21285. [PMID: 29041427 DOI: 10.1364/oe.25.021275] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2017] [Accepted: 07/31/2017] [Indexed: 06/07/2023]
Abstract
We demonstrate a large-scale tunable-coupling ring resonator array, suitable for high-dimensional classical and quantum transforms, in a CMOS-compatible silicon photonics platform. The device consists of a waveguide coupled to 15 ring-based dispersive elements with programmable linewidths and resonance frequencies. The ability to control both quality factor and frequency of each ring provides an unprecedented 30 degrees of freedom in dispersion control on a single spatial channel. This programmable dispersion control system has a range of applications, including mode-locked lasers, quantum key distribution, and photon-pair generation. We also propose a novel application enabled by this circuit - high-speed quantum communications using temporal-mode-based quantum data locking - and discuss the utility of the system for performing the high-dimensional unitary optical transformations necessary for a quantum data locking demonstration.
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49
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Schröder T, Trusheim ME, Walsh M, Li L, Zheng J, Schukraft M, Sipahigil A, Evans RE, Sukachev DD, Nguyen CT, Pacheco JL, Camacho RM, Bielejec ES, Lukin MD, Englund D. Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures. Nat Commun 2017; 8:15376. [PMID: 28548097 PMCID: PMC5458551 DOI: 10.1038/ncomms15376] [Citation(s) in RCA: 46] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2016] [Accepted: 03/23/2017] [Indexed: 12/22/2022] Open
Abstract
The controlled creation of defect centre—nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here we demonstrate direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with ∼32 nm lateral precision and <50 nm positioning accuracy relative to a nanocavity. We determine the Si+ ion to SiV centre conversion yield to be ∼2.5% and observe a 10-fold conversion yield increase by additional electron irradiation. Low-temperature spectroscopy reveals inhomogeneously broadened ensemble emission linewidths of ∼51 GHz and close to lifetime-limited single-emitter transition linewidths down to 126±13 MHz corresponding to ∼1.4 times the natural linewidth. This method for the targeted generation of nearly transform-limited quantum emitters should facilitate the development of scalable solid-state quantum information processors. Interfacing spin quantum memories with photons requires the controlled creation of defect centre—nanocavity systems. Here the authors demonstrate direct, maskless creation of single silicon vacancy centres in diamond nanostructures, and report linewidths comparable to naturally occurring centres
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Affiliation(s)
- Tim Schröder
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Matthew E Trusheim
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Michael Walsh
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Luozhou Li
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Jiabao Zheng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Marco Schukraft
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Alp Sipahigil
- Department of Physics, Harvard University, 17 Oxford Street, Cambridge, Massachusetts 02138, USA
| | - Ruffin E Evans
- Department of Physics, Harvard University, 17 Oxford Street, Cambridge, Massachusetts 02138, USA
| | - Denis D Sukachev
- Department of Physics, Harvard University, 17 Oxford Street, Cambridge, Massachusetts 02138, USA
| | - Christian T Nguyen
- Department of Physics, Harvard University, 17 Oxford Street, Cambridge, Massachusetts 02138, USA
| | - Jose L Pacheco
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
| | - Ryan M Camacho
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
| | | | - Mikhail D Lukin
- Department of Physics, Harvard University, 17 Oxford Street, Cambridge, Massachusetts 02138, USA
| | - Dirk Englund
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
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50
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Berhane AM, Jeong KY, Bodrog Z, Fiedler S, Schröder T, Triviño NV, Palacios T, Gali A, Toth M, Englund D, Aharonovich I. Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride. Adv Mater 2017; 29:1605092. [PMID: 28181313 DOI: 10.1002/adma.201605092] [Citation(s) in RCA: 32] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2016] [Revised: 12/20/2016] [Indexed: 05/24/2023]
Abstract
Room-temperature quantum emitters in gallium nitride (GaN) are reported. The emitters originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range. The sources are found in different GaN substrates, and therefore are promising for scalable quantum technologies.
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Affiliation(s)
- Amanuel M Berhane
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Kwang-Yong Jeong
- Department of Electrical Engineering and Computer Science, MIT, Cambridge, MA, 02139, USA
| | - Zoltán Bodrog
- Institute for Solid State Physics and Optics, Wigner RCP of the Hungarian Academy of Sciences, Budapest, POB 49, H-1525, Hungary
| | - Saskia Fiedler
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Tim Schröder
- Department of Electrical Engineering and Computer Science, MIT, Cambridge, MA, 02139, USA
| | - Noelia Vico Triviño
- Department of Electrical Engineering and Computer Science, MIT, Cambridge, MA, 02139, USA
| | - Tomás Palacios
- Department of Electrical Engineering and Computer Science, MIT, Cambridge, MA, 02139, USA
| | - Adam Gali
- Institute for Solid State Physics and Optics, Wigner RCP of the Hungarian Academy of Sciences, Budapest, POB 49, H-1525, Hungary
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Dirk Englund
- Department of Electrical Engineering and Computer Science, MIT, Cambridge, MA, 02139, USA
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
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