High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulators

A 5 × 200 Gbps microring modulator silicon chip empowered by two-segment Z-shape junctions

Optical interconnects have been recognized as the most promising solution to accelerate data transmission in the artificial intelligence era. Benefiting from their cost-effectiveness, compact dimensions, and wavelength multiplexing capability, silicon microring resonator modulators emerge as a compelling and scalable means for optical modulation. However, the inherent trade-off between bandwidth and modulation efficiency hinders the device performance. Here we demonstrate a dense wavelength division multiplexing microring modulator array on a silicon chip with a full data rate of 1 Tb/s. By harnessing the two individual p-n junctions with an optimized Z-shape doping profile, the inherent trade-off of silicon depletion-mode modulators is greatly mitigated, allowing for higher-speed modulation with energy consumption of sub-ten fJ/bit. This state-of-the-art demonstration shows that all-silicon modulators can practically enable future 200 Gb/s/lane optical interconnects.

Mach-Zehnder interferometric engineering in silicon optical modulators: towards extrinsic OMA enhancement

The realization of a high dynamic extinction ratio (ER) and optical modulation amplitude (OMA) while keeping the optical and radio-frequency (RF) signal losses low is a major issue for carrier-depletion Mach-Zehnder (MZ) silicon optical modulators. However, there is still room to improve modulator performance by applying the information gained from recent advanced testing technology to the modulator design. In this study, the extrinsic OMA (E-OMA) enhancement effect, which was discovered through the evaluation process and by revisiting the physics of the MZ interferometer (MZI), is investigated. First, we raise the issue of a periodic ripple observed on an MZI spectrum that has previously been overlooked but can affect modulator performance and attribute it to optical resonance between the multi-mode interferometers that compose an MZI. We show that, although having the effect of reducing the dynamic ER in the push-pull regime, as demonstrated experimentally, this resonance can take them beyond the realm of modulation efficiency and generate an E-OMA enhancement effect in the single-arm-drive regime without involving any optical and RF signal losses. By comparing two modulator structures that generate resonance internally, we successfully identify the factors that are responsible for increasing the E-OMA enhancement effect. We reveal that theoretically the OMA can easily be increased by 0.45 dB or more.

110 GHz, 110 mW hybrid silicon-lithium niobate Mach-Zehnder modulator

High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. The design does not require etching of thin-film LN, and uses hybrid optical modes formed by bonding LN to planarized silicon photonic waveguide circuits. A high optical power handling capability in the MZM was achieved by carefully tapering the underlying Si waveguide to reduce the impact of optically-generated carriers, while retaining a high modulation efficiency. The MZM has a [Formula: see text] product of 3.1 V.cm and an on-chip optical insertion loss of 1.8 dB.

Silicon Photonic Phase Shifters and Their Applications: A Review

With the development of silicon photonics, dense photonic integrated circuits play a significant role in applications such as light detection and ranging systems, photonic computing accelerators, miniaturized spectrometers, and so on. Recently, extensive research work has been carried out on the phase shifter, which acts as the fundamental building block in the photonic integrated circuit. In this review, we overview different types of silicon photonic phase shifters, including micro-electro-mechanical systems (MEMS), thermo-optics, and free-carrier depletion types, highlighting the MEMS-based ones. The major working principles of these phase shifters are introduced and analyzed. Additionally, the related works are summarized and compared. Moreover, some emerging applications utilizing phase shifters are introduced, such as neuromorphic computing systems, photonic accelerators, multi-purpose processing cores, etc. Finally, a discussion on each kind of phase shifter is given based on the figures of merit.

Advances in integrated ultra-wideband electro-optic modulators [Invited]

Increasing data traffic and bandwidth-hungry applications require electro-optic modulators with ultra-wide modulation bandwidth for cost-efficient optical networks. Thus far, integrated solutions have emerged to provide high bandwidth and low energy consumption in compact sizes. Here, we review the design guidelines and delicate structures for higher bandwidth, applying them to lumped-element and traveling-wave electrodes. Additionally, we focus on candidate material platforms with the potential for ultra-wideband optical systems. By comparing the superiority and mechanism limitations of different integrated modulators, we design a future roadmap based on the recent advances.

Optical Interconnects Finally Seeing the Light in Silicon Photonics: Past the Hype

Electrical interconnects are becoming a bottleneck in the way towards meeting future performance requirements of integrated circuits. Moore's law, which observes the doubling of the number of transistors in integrated circuits every couple of years, can no longer be maintained due to reaching a physical barrier for scaling down the transistor's size lower than 5 nm. Heading towards multi-core and many-core chips, to mitigate such a barrier and maintain Moore's law in the future, is the solution being pursued today. However, such distributed nature requires a large interconnect network that is found to consume more than 80% of the microprocessor power. Optical interconnects represent one of the viable future alternatives that can resolve many of the challenges faced by electrical interconnects. However, reaching a maturity level in optical interconnects that would allow for the transition from electrical to optical interconnects for intra-chip and inter-chip communication is still facing several challenges. A review study is required to compare the recent developments in the optical interconnects with the performance requirements needed to reach the required maturity level for the transition to happen. This review paper dissects the optical interconnect system into its components and explains the foundational concepts behind the various passive and active components along with the performance metrics. The performance of different types of on-chip lasers, grating and edge couplers, modulators, and photodetectors are compared. The potential of a slot waveguide is investigated as a new foundation since it allows for guiding and confining light into low index regions of a few tens of nanometers in cross-section. Additionally, it can be tuned to optimize transmissions over 90° bends. Hence, high-density opto-electronic integrated circuits with optical interconnects reaching the dimensions of their electrical counterparts are becoming a possibility. The latest complete optical interconnect systems realized so far are reviewed as well.

All-optical linearized Mach-Zehnder modulator

A practical, broadband, all-optical linearization concept for a Mach-Zehnder modulator (MZM) is proposed and demonstrated. The unique transmitter design includes an amplitude modulated (AM) standard MZM with two optical outputs, where the alternative (or complimentary) output is combined with the laser carrier to create a linearizing optical local oscillator, which when coherently combined with the AM signal fully cancels 3^rd order intermodulation distortion components. Using this scheme, record linearity is achieved for a non-amplified RF photonic link, with spurious free dynamic range (SFDR) of 118.5 dB.Hz^2/3 and 123 dB.Hz^2/3 for single and dual fiber/photodetector schemes.

Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A Review

The realization of a silicon optical phase shifter marked a cornerstone for the development of silicon photonics, and it is expected that optical interconnects based on the technology relax the explosive datacom growth in data centers. High-performance silicon optical modulators and switches, integrated into a chip, play a very important role in optical transceivers, encoding electrical signals onto the light at high speed and routing the optical signals, respectively. The development of the devices is continuously required to meet the ever-increasing data traffic at higher performance and lower cost. Therefore, heterogeneous integration is one of the highly promising approaches, expected to enable high modulation efficiency, low loss, low power consumption, small device footprint, etc. Therefore, we review heterogeneously integrated optical modulators and switches for the next-generation silicon photonic platform.

Superconducting acousto-optic phase modulator

We report the development of a superconducting acousto-optic phase modulator fabricated on a lithium niobate substrate. A titanium-diffused optical waveguide is placed in a surface acoustic wave resonator, where the electrodes for mirrors and an interdigitated transducer are made of a superconducting niobium titanium nitride thin film. The device performance is evaluated as a substitute for the current electro-optic modulators, with the same fiber coupling scheme and comparable device size. Operating the device at a cryogenic temperature (T = 8 K), we observe the length-half-wave-voltage (length-Vπ) product of 1.78 V·cm. Numerical simulation is conducted to reproduce and extrapolate the performance of the device. An optical cavity with mirror coating on the input/output facets of the optical waveguide is tested for further enhancement of the modulation efficiency. A simple extension of the current device is estimated to achieve an efficient modulation with Vπ = 0.27 V.

Variation of Signal Reflection on Electrodes of Silicon Mach-Zehnder Modulators: Influence of Nanoscale Variation and Mitigation Strategies

Driving signal reflection on traveling wave electrodes (TWEs) is a critical issue in Mach–Zehnder modulators. Fabrication variation often causes a random variation in the electrode impedance and the signal reflection, which induces modulation characteristics variation. The variation of reflection could be intertwined with the variation of other electrode characteristics, such as microwave signal attenuation, resulting in complexity. Here, we characterize the (partial) correlation coefficients between the reflection and modulation characteristics at different bit rates. Decreasing correlation at higher bit rates is observed. Device physics analysis shows how the observed variation can be related to nanoscale variation of material properties, particularly in the embedded diode responsible for electro-optic modulation. We develop a detailed theory to analyze two variation modes of the diode (P-i-N diode or overlapping P/N regions), which reveal insight beyond simplistic diode models. Microwave signal attenuation tends to reduce the correlation with on-electrode reflection, particularly at high bit rates. The theory shows the relative importance of conductor-induced attenuation and “dielectric”-induced attenuation, with different dependence on the frequency and fabrication variation. Strategies on how to mitigate the effect of variation for better fabrication tolerance are discussed by considering three key factors: pre-shift in structural design, bias condition, and fabrication control accuracy.

Heterogeneously integrated ITO plasmonic Mach-Zehnder interferometric modulator on SOI

Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates rather sizable device lengths. The ideal active material choice should avail high index modulation while being easily integrated into Silicon photonics platforms. Indium tin oxide (ITO) offers such functionalities and has shown promising modulation capacity recently. Interestingly, the nanometer-thin unity-strong index modulation of ITO synergistically combines the high group-index in hybrid plasmonic with nanoscale optical modes. Following this design paradigm, here, we demonstrate a spectrally broadband, GHz-fast Mach–Zehnder interferometric modulator, exhibiting a high efficiency signified by a miniscule V_πL of 95 V μm, deploying a one-micrometer compact electrostatically tunable plasmonic phase-shifter, based on heterogeneously integrated ITO thin films into silicon photonics. Furthermore we show, that this device paradigm enables spectrally broadband operation across the entire telecommunication near infrared C-band. Such sub-wavelength short efficient and fast modulators monolithically integrated into Silicon platform open up new possibilities for high-density photonic circuitry, which is critical for high interconnect density of photonic neural networks or applications in GHz-fast optical phased-arrays, for example.

Plasmonic-organic hybrid electro/optic Mach-Zehnder modulators: from waveguide to multiphysics modal-FDTD modeling

Plasmonic organic hybrid electro/optic modulators are among the most innovative light modulators fully compatible with the silicon photonics platform. In this context, modeling is instrumental to both computer-aided optimization and interpretation of experimental data. Due to the large computational resources required, modeling is usually limited to waveguide simulations. The first aim of this work to investigate an improved, physics-based description of the voltage-dependent electro/optic effect, leading to a multiphysics-augmented model of the modulator cross-section. Targeting the accuracy of full-wave, 3D modeling with moderate computational resources, the paper presents a novel mixed modal-FDTD simulation strategy that allows us to drastically reduce the number and complexity of 3D-FDTD simulations needed to accurately evaluate the modulator response. This framework is demonstrated on a device inspired by the literature.

High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s-1 for energy-efficient datacentres and harsh-environment applications

To reduce the ever-increasing energy consumption in datacenters, one of the effective approaches is to increase the ambient temperature, thus lowering the energy consumed in the cooling systems. However, this entails more stringent requirements for the reliability and durability of the optoelectronic components. Herein, we fabricate and demonstrate silicon-polymer hybrid modulators which support ultra-fast single-lane data rates up to 200 gigabits per second, and meanwhile feature excellent reliability with an exceptional signal fidelity retained at extremely-high ambient temperatures up to 110 °C and even after long-term exposure to high temperatures. This is achieved by taking advantage of the high electro-optic (EO) activities (in-device n3r33 = 1021 pm V-1), low dielectric constant, low propagation loss (α, 0.22 dB mm-1), and ultra-high glass transition temperature (Tg, 172 °C) of the developed side-chain EO polymers. The presented modulator simultaneously fulfils the requirements of bandwidth, EO efficiency, and thermal stability for EO modulators. It could provide ultra-fast and reliable interconnects for energy-hungry and harsh-environment applications such as datacentres, 5G/B5G, autonomous driving, and aviation systems, effectively addressing the energy consumption issue for the next-generation optical communication.

Self-biasing of carrier depletion based silicon microring modulators

We report on the self-biasing effect of carrier depletion based silicon microring modulators (MRM) by demonstrating that a silicon MRM can generate open eye diagrams for non-return-to-zero (NRZ) on-off keying (OOK) modulation without an external reverse bias supplied to it. Two modulator configurations are investigated namely single-ended drive in a ground-signal-ground and differential drive in a ground-signal-signal-ground pad configurations. The single-ended modulator is designed with an on photonic integrated circuit (PIC) 50 Ω termination. Open eye diagrams are obtained at 25 Gbit/s and 36 Gbit/s NRZ OOK modulations. We carry-out thorough experimental characterization of the self-biasing of single-ended MRM under various operating conditions of input optical power, carrier wavelength, ring quality factor and extinction ratio as well as modulation speeds, driving voltage swing and pattern length. We demonstrate that the self-biasing is robust and works well in almost all tested conditions. The differential drive MRM is designed with a high impedance without an on-PIC 50 Ω termination. Open eye diagrams are obtained at 30 Gbit/s and 60 Gbit/s NRZ OOK modulations for modulating voltage swing of ∼2.5 V_pp. As demonstrated, the self-biasing works well in both single-ended and differential drive configurations as well as for on-PIC 50 Ω terminated and non-terminated MRMs. The electrical passive parts are all co-designed and fabricated on the same silicon chip as the PIC. The reported self-biasing eliminates the need of having bipolar DC biases supplied to the anode and cathode of the differential drive modulator and allows for simpler driver / modulator interfaces without inductive bias tees.

Design of a 90 GHz SOI Fin Electro-Optic Modulator for High-Speed Applications

Introducing high speed networks, such as the fifth generation of mobile technology and related applications including the internet of things, creates a pressing demand for hardware infrastructure that provides sufficient bandwidth. Here, silicon-based microwave-photonics presents a solution that features easy and inexpensive fabrication through a mature platform that has long served the electronics industry. In this work, the design of an electro-optic modulator is proposed where the ‘fin’ structure is adopted from the domain of electronics devices, with emphasis on the high speed of operation. The proposed modulator is customized to provide a bandwidth of 90 GHz with a small phase shifter length of 800 μm and an optical insertion loss of 4 dB. With such a speed, this proposed modulator fits high-speed applications such as modern tele-communications systems.

Nano–opto-electro-mechanical switches operated at CMOS-level voltages

Combining reprogrammable optical networks with complementary metal-oxide semiconductor (CMOS) electronics is expected to provide a platform for technological developments in on-chip integrated optoelectronics. We demonstrate how opto-electro-mechanical effects in micrometer-scale hybrid photonic-plasmonic structures enable light switching under CMOS voltages and low optical losses (0.1 decibel). Rapid (for example, tens of nanoseconds) switching is achieved by an electrostatic, nanometer-scale perturbation of a thin, and thus low-mass, gold membrane that forms an air-gap hybrid photonic-plasmonic waveguide. Confinement of the plasmonic portion of the light to the variable-height air gap yields a strong opto-electro-mechanical effect, while photonic confinement of the rest of the light minimizes optical losses. The demonstrated hybrid architecture provides a route to develop applications for CMOS-integrated, reprogrammable optical systems such as optical neural networks for deep learning.

Single-carrier 72 GBaud 32QAM and 84 GBaud 16QAM transmission using a SiP IQ modulator with joint digital-optical pre-compensation

We establish experimentally the suitability of an all-silicon optical modulator to support future ultra-high-capacity coherent optical transmission links beyond 400 Gb/s. We present single-carrier data transmission from 400 Gb/s to 600 Gb/s using an all-silicon IQ modulator produced with a generic foundry process. The operating point of the silicon photonic transmitter is carefully optimized to find the best efficiency bandwidth trade-off. We present a methodology to split pre-compensation between digital and optical stages. For the 400 Gb/s transmission, we achieved 60 Gbaud dual-polarization (DP)-16QAM, reaching a distance of 1,520 km. Transmission of 500 Gb/s was further tested using 75 Gbaud 16QAM and 60 Gbaud 32QAM, reaching 1,120 km and 480 km, respectively. We finally demonstrated 72 Gbaud DP-32QAM (720 Gb/s) transmitted over 160 km and 84 Gbaud DP-16QAM (672 Gb/s) transmitted over 720 km, meeting the threshold for 20% forward error correction overhead and achieving net rates of 600 Gb/s and 576 Gb/s, respectively. To the best of our knowledge, these are the highest baud-rate coherent transmission results achieved using an all-silicon IQ modulator. We have demonstrated that we can reap the myriad advantages of SiP integration for transmission at extreme bit rates.

Ghost imaging using a large-scale silicon photonic phased array chip

We experimentally demonstrate the use of a large-scale silicon-photonic optical phased array (OPA) chip as a compact, low-cost, and potentially high-speed light illuminating device for ghost imaging (GI) applications. By driving 128 phase shifters of a newly developed silicon OPA chip using rapidly changing random electrical signals, we successfully retrieve a slit pattern with over 90 resolvable points in one dimension. We then demonstrate 2D imaging capability by sweeping the wavelength. With the potential of integrating high-speed phase modulators, tunable lasers, grating couplers, and CMOS driver circuit on the same silicon platform, this work paves the way towards realizing ultrahigh-speed and low-cost single-chip GI devices.

On-chip silicon photonic signaling and processing: a review

The arrival of the big data era has driven the rapid development of high-speed optical signaling and processing, ranging from long-haul optical communication links to short-reach data centers and high-performance computing, and even micro-/nano-scale inter-chip and intra-chip optical interconnects. On-chip photonic signaling is essential for optical data transmission, especially for chip-scale optical interconnects, while on-chip photonic processing is a critical technology for optical data manipulation or processing, especially at the network nodes to facilitate ultracompact data management with low power consumption. In this paper, we review recent research progress in on-chip photonic signaling and processing on silicon photonics platforms. Firstly, basic key devices (lasers, modulators, detectors) are introduced. Secondly, for on-chip photonic signaling, we present recent works on on-chip data transmission of advanced multi-level modulation signals using various silicon photonic integrated devices (microring, slot waveguide, hybrid plasmonic waveguide, subwavelength grating slot waveguide). Thirdly, for on-chip photonic processing, we summarize recent works on on-chip data processing of advanced multi-level modulation signals exploiting linear and nonlinear effects in different kinds of silicon photonic integrated devices (strip waveguide, directional coupler, 2D grating coupler, microring, silicon-organic hybrid slot waveguide). Various photonic processing functions are demonstrated, such as photonic switch, filtering, polarization/wavelength/mode (de)multiplexing, wavelength conversion, signal regeneration, optical logic and computing. Additionally, we also introduce extended silicon+ photonics and show recent works on on-chip graphene-silicon photonic signal processing. The advances in on-chip silicon photonic signaling and processing with favorable performance pave the way to integrate complete optical communication systems on a monolithic chip and integrate silicon photonics and silicon nanoelectronics on a chip. It is believed that silicon photonics will enable more and more emerging advanced applications even beyond silicon photonic signaling and processing.

Integrated germanium-on-silicon Franz-Keldysh vector modulator used with a Kramers-Kronig receiver

We propose an integrated vector modulator based on two compact and high-speed germanium-on-silicon Franz-Keldysh electro-absorption modulators. The proposed vector modulator is extremely compact with a total footprint of only 1800  μm×200  μm. We further experimentally demonstrate a 4-quadrature-amplitude-modulation (4-QAM) at 40 Gb/s over a 20-km standard single-mode fiber transmission. The complex signal is successfully re-constructed with a single-ended photodiode in a recently proposed Kramers-Kronig receiver for future low-cost, low-power, and low-footprint datacenter interconnect applications. The preliminary performance of the vector modulator with a 16-QAM is also investigated.

Frequency response of dual-drive silicon photonic modulators with coupling between electrodes

We characterize the electro-optic frequency response of a four-port traveling-wave dual-drive modulator with relatively strong coupling amongst the electrodes. We show that the electro-optic frequency response of the MZM can still be predicted with the 2×2 cascaded matrix model if the MZM is symmetric and differentially driven.

Silicon traveling-wave Mach-Zehnder modulator under distributed-bias driving

The silicon traveling-wave (TW) Mach-Zehnder modulator (MZM) is one of the most important devices in silicon photonic transceivers for high-speed optical interconnects. Its phase shifter utilizes carrier depletion of pn diodes for high speed, but suffers low modulation efficiency. Extensive efforts have been made on pre-fabrication optimizations, including waveguides, doping, and electrodes to enhance high-frequency modulation efficiency. Instead, we here propose an adaptive post-fabrication distributed-bias driving method that enables 20%∼30% high-frequency efficiency enhancement at both 10 and 25 Gbps without doing any optimizations for a silicon TW-MZM. This method explores the bias nonlinearity of index modulation which, to the best of our knowledge, is utilized for the first time in driving silicon modulators to improve the efficiency. We demonstrated the viability of this adaptive driving concept to achieve better performance, and this Letter could open new avenues for silicon traveling-wave modulator design and performance trade-off.

Modulator figure of merit for short reach data links

The traditional Mach-Zehnder modulator (MZM) figure of merit (FOM) has been defined as (V_π²)/υ_3dBe, and works effectively for LiNbO₃ long haul modulators. However, for plasma dispersion based electro-optic modulators, or any modulator that has an inherent relationship between its bandwidth, required drive voltage, and optical insertion loss/gain, this FOM is inappropriate. This is particularly true for short reach links with no optical amplification. In the following, we propose a new modulator FOM (M-FOM) based on device metrics that are essential for short-reach links, such as the peak-to-peak drive voltage, modulator rise-fall time, and relative optical modulation amplitude. Link sensitivity measurements from two MZMs that have different bandwidths and optical losses are compared using our M-FOM to demonstrate its utility. Furthermore, we present a novel application protocol of our M-FOM to provide deeper insight into the relative system impact that modulator performance has on data links with no optical amplification, by taking the ratio of M-FOMs from two modulators driven with the same radio frequency drive power.

Optical PAM-4 signal generation using a silicon Mach-Zehnder optical modulator

An analytic model is proposed to study the linearity performance of the silicon Mach-Zehnder optical modulator. According to the simulation results, we optimize the width of the silicon rib waveguide and the location of the PN junction to improve the linearity performance. The fabricated silicon Mach-Zehnder optical modulator has a spurious free dynamic range of 113.3 dB.Hz^2/3 and 88.9 dB.Hz^1/2 for the third-order intermodulation distortion and the second-order harmonic distortion. We also demonstrate the optical four-level pulse-amplitude-modulation (PAM-4) signal generation through the device. The generated optical PAM-4 signal is characterized at the rates up to 35 Gbaud. The BERs of the optical PAM-4 signals can reach 5.2╳10^-6 at 20 Gbaud and 6.6╳10^-5 at 32 Gbaud, which are much lower than the threshold of hard decision forward error correction (3.8 ╳10^-3).

Experimental parametric study of 128 Gb/s PAM-4 transmission system using a multi-electrode silicon photonic Mach Zehnder modulator

We present an experimental study and analysis of a travelling wave series push-pull silicon photonic multi-electrode Mach-Zehnder modulator (ME-MZM) and compare its performance with a single-electrode travelling wave Mach-Zehnder modulator (TWMZM). Utilizing the functionality of the ME-MZM structure plus digital-signal-processing, we report: 1) the C-band transmission of 84 Gb/s OOK modulated data below the KP4 forward error correction threshold with 2 V_pp drive voltage over a distance of 2 km; 2) the transmission of a 128 Gb/s optical 4-level pulse amplitude modulated signal over 1 km of fiber; and 3) the generation of a 168 Gb/s PAM-4 signal using two electrical OOK signals. By comparing the transmission system performance measurements for the ME-MZM with measurements performed using a similar series push-pull TWMZM, we show that the ME-MZM provides a clear advantage in achieving higher baud PAM-4 generation and transmission compared to a TWMZM.

Silicon PAM-4 optical modulator driven by two binary electrical signals with different peak-to-peak voltages

We demonstrate a silicon PAM-4 optical modulator, which is based on a symmetric Mach-Zehnder interferometer. Two uncorrelated binary electrical signals with different peak-to-peak voltages are applied to the phase shifters of the silicon optical modulator. Accordingly, two different phase shifts are generated in the two arms. After the permutation, there are totally four phase differences between the two arms and the output optical power has four levels. The device can work at 32 Gbaud in the wavelength range from 1525 to 1565 nm, which is promising for the next-generation high-speed silicon optical link.

Silicon 16-QAM optical modulator driven by four binary electrical signals

We demonstrate a silicon 16-quadrature amplitude modulation (16-QAM) optical modulator. Unlike traditional 16-QAM optical modulator with two Mach-Zehnder modulators (MZMs) driven by two four-level electrical signals, the device is based on four MZMs driven by four binary electrical signals. With the simple electrical driving configuration, the device generates a 16-QAM optical signal at 20 Gbaud with an error vector magnitude of 13.7%.

U-shaped PN junctions for efficient silicon Mach-Zehnder and microring modulators in the O-band

We demonstrate U-shaped silicon PN junctions for energy efficient Mach-Zehnder modulators and ring modulators in the O-band. This type of junction has an improved modulation efficiency compared to existing PN junction geometries, has low losses, and supports high-speed operation. The U-shaped junctions were fabricated in an 8" silicon photonics platform, and they were incorporated in travelling-wave Mach-Zehnder modulators and microring modulators. For the high-bandwidth Mach-Zehnder modulator, the DC V_πL at -0.5 V bias was 4.6 V·mm. It exhibited a 3dB bandwidth of 13 GHz, and eye patterns at up to 24 Gb/s were observed. A V_πL as low as ~2.6 V·mm at a -0.5 V bias was measured in another device. The ring modulator tuning efficiency was 40 pm·V^-1 between 0 V and -0.5 V bias. It had a 3-dB bandwidth of 13.5 GHz and open eye patterns at up to 13 Gb/s were measured. This type of PN junctions can be easily fabricated without extra masks and can be incorporated into generic silicon photonics platforms.

Flip-chip integrated silicon Mach-Zehnder modulator with a 28nm fully depleted silicon-on-insulator CMOS driver

We present a silicon electro-optic transmitter consisting of a 28nm ultra-thin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI) CMOS driver flip-chip integrated onto a Mach-Zehnder modulator. The Mach-Zehnder silicon optical modulator was optimized to have a 3dB bandwidth of around 25 GHz at -1V bias and a 50 Ω impedance. The UTBB FD-SOI CMOS driver provided a large output voltage swing around 5 V_pp to enable a high dynamic extinction ratio and a low device insertion loss. At 44 Gbps, the transmitter achieved a high extinction ratio of 6.4 dB at the modulator quadrature operation point. This result shows open eye diagrams at the highest bit rates and with the largest extinction ratios for silicon electro-optic transmitter using a CMOS driver.

High-performance and linear thin-film lithium niobate Mach-Zehnder modulators on silicon up to 50 GHz

Compact electro-optical modulators are demonstrated on thin films of lithium niobate on silicon operating up to 50 GHz. The half-wave voltage length product of the high-performance devices is 3.1 V.cm at DC and less than 6.5 V.cm up to 50 GHz. The 3 dB electrical bandwidth is 33 GHz, with an 18 dB extinction ratio. The third-order intermodulation distortion spurious free dynamic range is 97.3  dBHz^2/3 at 1 GHz and 92.6  dBHz^2/3 at 10 GHz. The performance demonstrated by the thin-film modulators is on par with conventional lithium niobate modulators but with lower drive voltages, smaller device footprints, and potential compatibility for integration with large-scale silicon photonics.

Method to improve the linearity of the silicon Mach-Zehnder optical modulator by doping control

We optimize the linearity performance of silicon carrier-depletion Mach-Zehnder optical modulator through controlling the doping concentration. The optical field distribution in the waveguide is a Gaussian-like distribution. As the doping concentration increases, the dynamic depletion width of the PN junction under the same modulation signal will decrease, and the integration width of the overlap between the Gaussian-like optical field distribution and the depletion region will become smaller. Therefore the modulated signal has less nonlinear components. Our simulation results proved this analysis. We also fabricated different devices with different doping concentrations. By adopting a ten times doping concentration, the spurious free dynamic range (SFDR) for third-order intermodulation distortion (TID) increases from 109.2 dB.Hz^2/3 to 113.7 dB.Hz^2/3 and the SFDR for second harmonic distortion (SHD) increases from 87.6 dB.Hz^1/2 to 97.5 dB.Hz^1/2 at a driving frequency of 2 GHz. When the driving frequency is 20 GHz, the SFDRs for TID and SHD distortions are 110.3 dB.Hz^2/3 and 96 dB.Hz^1/2, respectively.

Multi-function Mach-Zehnder modulator for pulse shaping and generation

We present a multi-function electronic-photonic integrated circuit (EPIC) design which exploits a new operation mode of a Mach-Zehnder modulator (MZM). Different from the conventional design, the two arms of the modulator are driven by time-shifted signals of tunable amplitude. We study its operation in the linear and quadratic regions where the MZM is biased at π/2 and π initial phase difference, respectively. In the linear region, the modulator sums the waveforms of the driving signals in the two arms, which can be used to add pre-emphasis function to the modulator, and hence it obviates an electrical pre-emphasis driver. Furthermore, when operating in the quadratic region, the modulator can produce optical pulses with tunable pulse width at double clock rate. Prototype circuits are designed first using a suit of device, electromagnetic simulators to build compact models, and then importing into a photonic circuit simulator for complete circuit performance evaluation.

Coplanar-waveguide-based silicon Mach-Zehnder modulator using a meandering optical waveguide and alternating-side PN junction loading

We demonstrate a silicon Mach-Zehnder modulator with a coplanar waveguide transmission-line electrode structure using a meandering optical waveguide and alternating-side PN junction loading of the electrodes, which helps suppress the signal distortion caused by the parasitic slot-line mode and improves the electro-optic (EO) bandwidth. The silicon MZM exhibits a π-phase-shift voltage (V_π) of 4.5 V with an EO 3 dB bandwidth of ∼20  GHz for a 5 mm long phase shifter. This achieved V_π is among the lowest for silicon-only modulators with a bandwidth of more than 20 GHz.

Highly linear heterogeneous-integrated Mach-Zehnder interferometer modulators on Si

In this paper we demonstrate highly linear Mach-Zehnder interferometer modulators utilizing heterogeneous integration on a Si substrate (HS-MZM). A record high dynamic range was achieved for silicon devices, obtained using hybrid III-V/Si phase modulation sections and single drive push-pull operation, demonstrating a spurious free dynamic range (SFDR) of 112 dB∙Hz^2/3 at 10 GHz, comparable to commercial Lithium Niobate MZMs.

Demonstration of a high-speed electro-optic switch with passive-to-active integrated waveguide based on SU-8 material

A Mach–Zehnder interferometer type of electro-optic switch with passive-to-active integrated waveguides was fabricated based on SU-8 material, which exhibited low insertion loss and high-speed switching response.

Dense dissimilar waveguide routing for highly efficient thermo-optic switches on silicon

We analyze and demonstrate a method for increasing the efficiency of thermo-optic phase shifters on a silicon-on-insulator platform. The lack of cross-coupling between dissimilar waveguides allows highly dense waveguide routing under heating elements and a corresponding increase in efficiency. We demonstrate a device with highly dense routing of 9 waveguides under a 10 µm wide heater and achieve a low switching power of 95 µW, extinction ratio greater than 20 dB, and less than 0.1 dB ripple in the through spectrum with a footprint of less than 800 µm × 180 µm. The increase in waveguide density is found not to negatively impact the switch response time.

Distributed electrode Mach-Zehnder modulator with double-pass phase shifters and integrated inductors

A novel high-speed Mach-Zehnder modulator (MZM) fully integrated into a 90 nm CMOS process is presented. The MZM features 'double-pass' optical phase shifter segments, and the first use of integrated inductors in a 'velocity-matched' distributed-electrode configuration.

Experimental verification of electro-refractive phase modulation in graphene

Graphene has been considered as a promising material for opto-electronic devices, because of its tunable and wideband optical properties. In this work, we demonstrate electro-refractive phase modulation in graphene at wavelengths from 1530 to 1570 nm. By integrating a gated graphene layer in a silicon-waveguide based Mach-Zehnder interferometer, the key parameters of a phase modulator like change in effective refractive index, insertion loss and absorption change are extracted. These experimentally obtained values are well reproduced by simulations and design guidelines are provided to make graphene devices competitive to contemporary silicon based phase modulators for on-chip applications.

Design, analysis, and transmission system performance of a 41 GHz silicon photonic modulator

The design and characterization of a slow-wave series push-pull traveling wave silicon photonic modulator is presented. At 2 V and 4 V reverse bias, the measured -3 dB electro-optic bandwidth of the modulator with an active length of 4 mm are 38 GHz and 41 GHz, respectively. Open eye diagrams are observed up to bitrates of 60 Gbps without any form of signal processing, and up to 70 Gbps with passive signal processing to compensate for the test equipment. With the use of multi-level amplitude modulation formats and digital-signal-processing, the modulator is shown to operate below a hard-decision forward error-correction threshold of 3.8×10^-3 at bitrates up to 112 Gbps over 2 km of single mode optical fiber using PAM-4, and over 5 km of optical fiber with PAM-8. Energy consumed solely by the modulator is also estimated for different modulation cases.

Travelling-wave Mach-Zehnder modulators functioning as optical isolators

On-chip optical isolators not requiring the use of magneto-optical materials has become a long-standing challenge in integrated optics. Here, we demonstrate that a traditional travelling-wave modulator can effectively function as an optical isolator, when driven under a prescribed modulation condition. By using an off-shelve lithium niobate modulator, we achieve more than 12.5 dB isolation over an 11.3-THz bandwidth at telecommunication wavelengths with a fiber-to-fiber insertion loss of 5.5 dB, by employing only a single radio-frequency drive signal. We also verify that the proposed active isolator can be functional in a laser system to effectively prevent instability due to strong back reflections. Since travelling-wave modulators are common devices in III-V and silicon photonics, our simple but efficient architecture may provide a practical solution to non-reciprocal light routing in photonic integrated circuits.

Design optimization of single and double layer Graphene phase modulators in SOI

In this paper we report on an electro-refractive modulator based on single or double-layer graphene on top of silicon waveguides. The graphene layers are biased to the transparency condition in order to achieve phase modulation with negligible amplitude modulation. By means of a detailed study of both the electrical and optical properties of graphene and silicon, as well as through optimization of the geometrical parameters, we show that the proposed devices may theoretically outperform existing modulators both in terms of V(π)L and of insertion losses. The overall figures of merit of the proposed devices are as low as 8.5 and 2dB∙V for the single and double layer cases, respectively.

Recent advances in silicon-based passive and active optical interconnects

Silicon photonics has experienced phenomenal transformations over the last decade. In this paper, we present some of the notable advances in silicon-based passive and active optical interconnect components, and highlight some of our key contributions. Light is also cast on few other parallel technologies that are working in tandem with silicon-based structures, and providing unique functions not achievable with any single system acting alone. With an increasing utilization of CMOS foundries for silicon photonics fabrication, a viable path for realizing extremely low-cost integrated optoelectronics has been paved. These advances are expected to benefit several application domains in the years to come, including communication networks, sensing, and nonlinear systems.

Demonstration of a high-speed switch with coplanar waveguide electrodes based on electro-optic polymer-clad waveguides

A Mach–Zehnder interferometer type of optic switch with electro-optic polymer-clad waveguides was fabricated with the simple wet-etching procedure, which exhibited low insertion loss and high-speed switching response.

High-efficiency Si optical modulator using Cu travelling-wave electrode

We demonstrate a high-efficiency and CMOS-compatible silicon Mach-Zehnder Interferometer (MZI) optical modulator with Cu traveling-wave electrode and doping compensation. The measured electro-optic bandwidth at Vbias = -5 V is above 30 GHz when it is operated at 1550 nm. At a data rate of 50 Gbps, the dynamic extinction ratio is more than 7 dB. The phase shifter is composed of a 3 mm-long reverse-biased PN junction with modulation efficiency (Vπ·Lπ) of ~18.5 V·mm. Such a Cu-photonics technology provides an attractive potentiality for integration development of silicon photonics and CMOS circuits on SOI wafer in the future.

Silicon optical modulator with shield coplanar waveguide electrodes

A silicon Mach-Zehnder Interferometer (MZI) optical modulator with a shield coplanar waveguide (CPW) transmission line electrode design was demonstrated. This shield-CPW electrode suppresses the signal distortion caused by the parasitic slot-line (SL) mode and improves the electrical bandwidth and the electro-optical (EO) bandwidth. With the shield-CPW electrodes and 5.5 mm-long phase shifters, the silicon MZI optical modulator delivered an EO bandwidth of above 24 GHz and a V (π) = 3.0 V was achieved at λ = 1310 nm. When modulated at 28-Gb/s data rate, it achieved an extinction ratio of 5.66 dB under a driving voltage of V (pp) = 1.3 V, corresponding to a power consumption of 0.8 pJ/bit.

Experimental study of 112 Gb/s short reach transmission employing PAM formats and SiP intensity modulator at 1.3 μm

We present a Silicon Photonic (SiP) intensity modulator operating at 1.3 μm with pulse amplitude modulation formats for short reach transmission employing a digital to analog converter for the RF signal generator, enabling pulse shaping and precompensation of the transmitter's frequency response. Details of the SiP Mach-Zehnder interfometer are presented. We study the system performance at various bit rates, PAM orders and propagation distances. To the best of our knowledge, we report the first demonstration of a 112 Gb/s transmission over 10 km of SMF fiber operating below pre-FEC BER threshold of 3.8 × 10(-3) employing PAM-8 at 37.4 Gbaud using a fully packaged SiP modulator. An analytical model for the Q-factor metric applicable for multilevel PAM-N signaling is derived and accurately experimentally verified in the case of Gaussian noise limited detection. System performance is experimentally investigated and it is demonstrated that PAM order selection can be optimally chosen as a function of the desired throughput. We demonstrate the ability of the proposed transmitter to exhibit software-defined transmission for short reach applications by selecting PAM order, symbol rate and pulse shape.

High-speed silicon modulator with band equalization

Electro-optic modulation up to 70 Gbit/s has been demonstrated using a silicon Mach-Zehnder modulator with a bias voltage of -1.5 V. In a wide frequency range from DC, an increasing input impedance of the modulator was designed to equalize its electro-optic frequency response. Without a bias voltage, the 3 dB bandwidth was measured as 35 GHz and it is predicted to be as high as 55 GHz at -3 V bias. Frequency responses of the modulator operated with counter-propagating waves were tested to verify the proposed prediction model.

Demonstration of 6.25 Gbaud advanced modulation formats with subcarrier multiplexed technique on silicon Mach-Zehnder modulator

Silicon Mach-Zehnder modulators (Si MZMs) with good linearity are designed and fabricated. 6.25 Gbaud Nyquist 16, 32 and 64-Quadrature Amplitude Modulation (QAM) optical signals were successfully generated by intensity modulation from the Si MZM, and the effective data rates are 22.61 Gb/s, 28.26 Gb/s and 33.91 Gb/s respectively. The subcarrier multiplexed technique and direct detection scheme were employed in this experiment. After 53.1 km transmission, the BERs of 16-QAM and 32-QAM are both below the 7% hard-decision forward error correction limit, while the back-to-back BER of 64-QAM is well below the 20% soft-decision forward error correction limit. These results demonstrated that the Si MZM can be used in the high-capacity low-cost short-haul intensity modulation and direct detection system.

Integrated silicon modulator based on microring array assisted MZI

A silicon modulator with microring array assisted MZI is experimentally demonstrated on silicon-on-insulator wafer through CMOS-compatible process. The footprint of the whole modulator is about 600 μm(2). With forward-biased current-driven p-n junction, the 3-dB modulation bandwidth is ~2GHz. Furthermore, the impact of ambient temperature is minified with the help of MZI. Within temperature range of 10 - 70 °C, the maximum divergence of modulation curve is less than ~3 dB.