Phase modulation in horizontal metal-insulator-silicon-insulator-metal plasmonic waveguides

A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator with Resonance Tuning by Carrier Concentration

A complementary metal-oxide-semiconductor (CMOS)-compatible carrier-injection plasmonic micro-ring modulator (CIPMRM) is designed and analyzed theoretically. The CIPMRM has a compacted footprint of 49.3 μm2 (R = 2 μm), a bit rate of 36.5 Gbps, insertion loss of −9.8 dB, a static extinction ratio of 21.7 dB, and energy consumption of 4.40 pJ/bit as 2.2 V peak-to-peak voltage is applied at 1550 nm. Besides, the method of resonance tuning by carrier concentration is proposed to compensate for the wavelength mismatch between the CIPMRM resonance and the laser, resulting from temperature and line width variation of the CIPMRM. This method has a faster response time and a greater ability to shift the resonant wavelength compared with the method of thermo-optic resonance tuning. The proposed scheme provides a route for realizing the compacted size modulator for optoelectronic integration.

A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator (CIPMRM) with Stable Performance as Temperature Varying around 60 K

A CMOS-compatible carrier-injection plasmonic micro-ring modulator (CIPMRM) is proposed and theoretically analyzed. It has a compacted footprint of 43.4 μm2 (R = 2 μm), a data rate of 45 Gbps, an insertion loss of −8 dB, a static extinction ratio of 22 dB, and an energy consumption of 4.5 pJ/bit when 2.5 V peak-to-peak voltage is applied. Moreover, it works well when temperature varies around 60 K. A method of tuning the resonant wavelength based on the carrier concentration is proposed here because the device is reliable when the linewidth varies within ±5%. CIPMRM provides a way to overcome the shortcomings of temperature and process sensitivity, which are characteristics of the photonic micro-ring modulator. It can be used in optoelectronic integration for its small size and stable performance.

Bonded thin film lithium niobate modulator on a silicon photonics platform exceeding 100 GHz 3-dB electrical modulation bandwidth

We demonstrate an ultra-high-bandwidth Mach-Zehnder electro-optic modulator (EOM), based on foundry-fabricated silicon (Si) photonics, made using conventional lithography and wafer-scale fabrication, oxide-bonded at 200C to a lithium niobate (LN) thin film. Our design integrates silicon photonics light input/output and optical components, such as directional couplers and low-radius bends. No etching or patterning of the thin film LN is required. This hybrid Si-LN MZM achieves beyond 106 GHz 3-dB electrical modulation bandwidth, the highest of any silicon photonic or lithium niobate (phase) modulator.

Low-loss plasmon-assisted electro-optic modulator

For nearly two decades, the field of plasmonics1 - which studies the coupling of electromagnetic waves to the motion of free electrons in a metal2 - has sought to realize subwavelength optical devices for information technology3–6, sensing7,8, nonlinear optics9,10, optical nanotweezers11 and biomedical applications12. Although the heat generated by ohmic losses is desired for some applications (e.g. photo-thermal therapy), plasmonic devices for sensing and information technology have largely suffered from these losses inherent to metals13. This has led to a widespread stereotype that plasmonics is simply too lossy to be practical. Here, we demonstrate that these losses can be bypassed by employing “resonant switching”. In the proposed approach, light is only coupled to the lossy surface plasmon polaritons in the device’s off-state (in resonance) where attenuation is desired to ensure large extinction ratios and facilitate sub-ps switching. In the on state (out of resonance), light is prevented from coupling to the lossy plasmonic section by destructive interference. To validate the approach, we fabricated a plasmonic electro-optic ring modulator. The experiments confirm that low on-chip optical losses (2.5 dB), high-speed operation (>>100 GHz), good energy efficiency (12 fJ/bit), low thermal drift (4‰ K^-1), and a compact footprint (sub-λ radius of 1 μm) can be realized within a single device. Our result illustrates the potential of plasmonics to render fast and compact on-chip sensing and communications technologies.

High-speed plasmonic modulator in a single metal layer

Plasmonics provides a possible route to overcome both the speed limitations of electronics and the critical dimensions of photonics. We present an all-plasmonic 116-gigabits per second electro-optical modulator in which all the elements-the vertical grating couplers, splitters, polarization rotators, and active section with phase shifters-are included in a single metal layer. The device can be realized on any smooth substrate surface and operates with low energy consumption. Our results show that plasmonics is indeed a viable path to an ultracompact, highest-speed, and low-cost technology that might find many applications in a wide range of fields of sensing and communications because it is compatible with and can be placed on a wide variety of materials.

Polarization-Insensitive Surface Plasmon Polarization Electro-Absorption Modulator Based on Epsilon-Near-Zero Indium Tin Oxide

CMOS-compatible plasmonic modulators operating at the telecom wavelength are significant for a variety of on-chip applications. Relying on the manipulation of the transverse magnetic (TM) mode excited on the metal-dielectric interface, most of the previous demonstrations are designed to response only for specific polarization state. In this case, it will lead to a high polarization dependent loss, when the polarization-sensitive modulator integrates to a fiber with random polarization state. Herein, we propose a plasmonic modulator utilizing a metal-oxide indium tin oxide (ITO) wrapped around the silicon waveguide and investigate its optical modulation ability for both the vertical and horizontal polarized guiding light by tuning electro-absorption of ITO with the field-induced carrier injection. The electrically biased modulator with electron accumulated at the ITO/oxide interface allows for epsilon-near-zero (ENZ) mode to be excited at the top or lateral portion of the interface depending on the polarization state of the guiding light. Because of the high localized feature of ENZ mode, efficient electro-absorption can be achieved under the "OFF" state of the device, thus leading to large extinction ratio (ER) for both polarizations in our proposed modulator. Further, the polarization-insensitive modulation is realized by properly tailoring the thickness of oxide in two different stacking directions and therefore matching the ER values for device operating at vertical and horizontal polarized modes. For the optimized geometry configuration, the difference between the ER values of two polarization modes, i.e., the ΔER, as small as 0.01 dB/μm is demonstrated and, simultaneously with coupling efficiency above 74%, is obtained for both polarizations at a wavelength of 1.55 μm. The proposed plasmonic-combined modulator has a potential application in guiding and processing of light from a fiber with a random polarization state.

Design optimization and fabrication of Mach- Zehnder interferometer based on MIM plasmonic waveguides

We proposed and designed a compact unbalanced Mach-Zehnder interferometer (MZI) based on metal/insulator/metal (MIM) plasmonic waveguides for ultrafast optical signal processing. The MZI was fabricated by a lithography technique and we provide, for the first time experimental evaluation of the transmission performance of the MZI using MIM PWGs. The experimental results were in good agreement with the numerical simulations. The proposed structure could be considered as a key device for on-chip optical integrated circuits.

Adiabatic Nanofocusing in Hybrid Gap Plasmon Waveguides on the Silicon-on-Insulator Platform

We present an experimental demonstration of a new class of hybrid gap plasmon waveguides on the silicon-on-insulator (SOI) platform. Created by the hybridization of the plasmonic mode of a gap in a thin metal sheet and the transverse-electric (TE) photonic mode of an SOI slab, this waveguide is designed for efficient adiabatic nanofocusing simply by varying the gap width. For gap widths greater than 100 nm, the mode is primarily photonic in character and propagation lengths can be many tens of micrometers. For gap widths below 100 nm, the mode becomes plasmonic in character with field confinement predominantly within the gap region and with propagation lengths of a few microns. We estimate the electric field intensity enhancement in hybrid gap plasmon waveguide tapers at 1550 nm by three-photon absorption of selectively deposited CdSe/ZnS quantum dots within the gap. Here, we show electric field intensity enhancements of up to 167 ± 26 for a 24 nm gap, proving the viability of low loss adiabatic nanofocusing on a commercially relevant photonics platform.

Plasmonic nanostructured metal-oxide-semiconductor reflection modulators

We propose a plasmonic surface that produces an electrically controlled reflectance as a high-speed intensity modulator. The device is conceived as a metal-oxide-semiconductor capacitor on silicon with its metal structured as a thin patch bearing a contiguous nanoscale grating. The metal structure serves multiple functions as a driving electrode and as a grating coupler for perpendicularly incident p-polarized light to surface plasmons supported by the patch. Modulation is produced by charging and discharging the capacitor and exploiting the carrier refraction effect in silicon along with the high sensitivity of strongly confined surface plasmons to index perturbations. The area of the modulator is set by the area of the incident beam, leading to a very compact device for a strongly focused beam (∼2.5 μm in diameter). Theoretically, the modulator can operate over a broad electrical bandwidth (tens of gigahertz) with a modulation depth of 3 to 6%, a loss of 3 to 4 dB, and an optical bandwidth of about 50 nm. About 1000 modulators can be integrated over a 50 mm(2) area producing an aggregate electro-optic modulation rate in excess of 1 Tb/s. We demonstrate experimentally modulators operating at telecommunications wavelengths, fabricated as nanostructured Au/HfO2/p-Si capacitors. The modulators break conceptually from waveguide-based devices and belong to the same class of devices as surface photodetectors and vertical cavity surface-emitting lasers.

Double bi-material cantilever structures for complex surface plasmon modulation

A complex modulation structure of surface plasmon polaritons using double bi-material cantilevers is proposed. It is shown with numerical analysis that the thermally controlled mechanical actuation of double bi-material cantilevers can modulate the amplitude and phase of surface plasmon polaritons across a full complex modulation range independently and simultaneously. The complex modulation structures designed for visible wavelengths are presented and their multi-wavelength integration is discussed.

Fabrication of a plasmonic modulator incorporating an overlaid grating coupler

The fabrication of a novel plasmonic reflection modulator is presented and described. The modulator includes plasmon excitation using a diffraction grating coupler and is based on a metal-insulator-semiconductor structure on silicon. Fabrication includes a thin thermal oxide, a plasmonic metal surface defined by optical lithography, a metal grating coupler defined by overlaid e-beam lithography, a passivation layer with metalized vias, and electrical contacts. Physical characterization of intermediate structures is provided along with modulation measurements at λ0 ∼ 1550 nm which verify the concept.

Nanoscale conducting oxide PlasMOStor

We experimentally demonstrate an ultracompact PlasMOStor, a plasmon slot waveguide field-effect modulator based on a transparent conducting oxide active region. By electrically modulating the conducting oxide material deposited into the gaps of highly confined plasmonic slot waveguides, we demonstrate field-effect dynamics giving rise to modulation with high dynamic range (2.71 dB/μm) and low waveguide loss (∼0.45 dB/μm). The large modulation strength is due to the large change in complex dielectric function when the signal wavelength approaches the surface plasmon resonance in the voltage-tuned conducting oxide accumulation layer. The results provide insight about the design of ultracompact, nanoscale modulators for future integrated nanophotonic circuits.

Design of an ultra-compact electro-absorption modulator comprised of a deposited TiN/HfO₂/ITO/Cu stack for CMOS backend integration

An ultra-compact electro-absorption (EA) modulator operating around 1.55-μm telecom wavelengths is proposed and theoretically investigated. The modulator is comprised of a stack of TiN/HfO2</ITO/Cu conformally deposited on a single-mode stripe waveguide to form a hybrid plasmonic waveguide (HPW). Since the thin ITO layer can behave as a semiconductor, the stack itself forms a MOS capacitor. A voltage is applied between the Cu and TiN layers to change the electron concentration of ITO (NITO), which in turn changes its permittivity as well as the propagation loss of HPW. For a HPW comprised of a Cu/3-nm-ITO/5-nm-HfO2/5-nm-TiN stack on a 400-nm × 340-nm-Si stripe waveguide, the propagation loss for the 1.55-μm TE (TM) mode increases from 1.6 (1.4) to 23.2 (23.9) dB/μm when the average NITO in the 3-nm ITO layer increases from 2 × 10(20) to 7 × 10(20) cm(-3), which is achieved by varying the voltage from -2 to 4 V if the initial NITO is 3.5 × 10(20) cm(-3). As a result, a 1-μm-long EA modulator inserted in the 400-nm × 340-nm-Si stripe waveguide exhibits insertion loss of 2.9 (3.2) dB and modulation depth of 19.9 (15.2) dB for the TE (TM) mode. The modulation speed is ~11 GHz, limited by the RC delay, and the energy consumption is ~0.4 pJ/bit. The stack can also be deposited on a low-index-contrast waveguide such as Si3N4. For example, a 4-μm-long EA modulator inserted in an 800-nm × 600-nm-Si3N4 stripe waveguide exhibits insertion loss of 6.3 (3.5) dB and modulation depth of 16.5 (15.8) dB for the TE (TM) mode. The influences of the ITO, TiN, HfO2 layers and the beneath dielectric core, as well as the processing tolerance, on the performance of the proposed EA modulator are systematically investigated.

Silicon nitride based plasmonic components for CMOS back-end-of-line integration

Silicon nitride waveguides provide low propagation loss but weak mode confinement due to the relatively small refractive index contrast between the Si₃N₄ core and the SiO2 cladding. On the other hand, metal-insulator-metal (MIM) plasmonic waveguides offer strong mode confinement but large propagation loss. In this work, MIM-like plasmonic waveguides and passive devices based on horizontal Cu-Si₃N₄-Cu or Cu-SiO₂-Si₃N₄-SiO₂-Cu structures are integrated in the conventional Si₃N₄ waveguide circuits using standard CMOS backend processes, and are characterized around 1550-nm telecom wavelengths using the conventional fiber-waveguide-fiber method. The Cu-Si₃N₄(~100 nm)-Cu devices exhibit ~0.78-dB/μm propagation loss for straight waveguides, ~38% coupling efficiency with the conventional 1-μm-wide Si₃N₄ waveguide through a 2-μm-long taper coupler, ~0.2-dB bending loss for sharp 90° bends, and ~0.1-dB excess loss for ultracompact 1 × 2 and 1 × 4 power splitters. Inserting a ~10-nm SiO₂ layer between the Si3N4 core and the Cu cover (i.e., the Cu-SiO2(~10 nm)-Si₃N₄(~100 nm)-SiO2(~10 nm)-Cu devices), the propagation loss and the coupling efficiency are improved to ~0.37 dB/μm and ~52% while the bending loss and the excess loss are degraded to ~3.2 dB and ~2.1 dB, respectively. These experimental results are roughly consistent with the numerical simulation results after taking the influence of possible imperfect fabrication into account. Ultracompact plasmonic ring resonators with 1-μm radius are demonstrated with an extinction ratio of ~18 dB and a quality factor of ~84, close to the theoretical prediction.

Ultrafast all-optical modulation in a silicon nanoplasmonic resonator

Ultrafast all-optical modulation in silicon-based metal-insulator-semiconductor-insulator-metal nanoring resonators through photogeneration of free-carriers using two-photon absorption is presented 3-D through finite difference time domain simulations. In a compact device footprint of only 1.4 µm(2), a 13.1 dB modulation amplitude was obtained with a switching time of only 2 ps using a modest pump pulse energy of 16.0 pJ. The larger bandwidth associated with more compact nanorings is shown to result in increased modulation amplitude.

Theoretical investigation of ultracompact and athermal Si electro-optic modulator based on Cu-TiO2-Si hybrid plasmonic donut resonator

An ultracompact silicon electro-optic modulator operating at 1550-nm telecom wavelengths is proposed and analyzed theoretically, which consists of a Cu-TiO(2)-Si hybrid plasmonic donut resonator evanescently coupled with a conventional Si channel waveguide. Owing to a negative thermo-optic coefficient of TiO(2) (~-1.8 × 10(-4) K(-1)), the real part of effective modal index of the curved Cu-TiO(2)-Si hybrid waveguide can be temperature-independent (i.e., athermal) if the TiO(2) interlayer and the beneath Si core have a certain thickness ratio. A voltage applied between the ring-shaped Cu cap and a cylinder metal electrode positioned at the center of the donut,--which makes Ohmic contact to Si, induces a ~1-nm-thick free-electron accumulation layer at the TiO(2)/Si interface. The optical field intensity in this thin accumulation layer is significantly enhanced if the accumulation concentration is sufficiently large (i.e., > ~6 × 10(20) cm(-3)), which in turn modulates both the resonance wavelengths and the extinction ratio of the donut resonator simultaneously. For a modulator with the total footprint inclusive electrodes of ~8.6 μm(2), 50-nm-thick TiO(2), and 160-nm-thick Si core, FDTD simulation predicts that it has an insertion loss of ~2 dB, a modulation depth of ~8 dB at a voltage swing of ~6 V, a speed-of-response of ~35 GHz, and a switching energy of ~0.45 pJ/bit, and it is athermal around room temperature. The modulator's performances can be further improved by optimization of the coupling strength between the bus waveguide and the donut resonator.