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Zhu Y, Yu VWZ, Galli G. First-Principles Investigation of Near-Surface Divacancies in Silicon Carbide. NANO LETTERS 2023; 23:11453-11460. [PMID: 38051297 DOI: 10.1021/acs.nanolett.3c02880] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
The realization of quantum sensors using spin defects in semiconductors requires a thorough understanding of the physical properties of the defects in the proximity of surfaces. We report a study of the divacancy (VSiVC) in 3C-SiC, a promising material for quantum applications, as a function of surface reconstruction and termination with -H, -OH, -F and oxygen groups. We show that a VSiVC close to hydrogen-terminated (2 × 1) surfaces is a robust spin-defect with a triplet ground state and no surface states in the band gap and with small variations of many of its physical properties relative to the bulk, including the zero-phonon line and zero-field splitting. However, the Debye-Waller factor decreases in the vicinity of the surface and our calculations indicate it may be improved by strain-engineering. Overall our results show that the VSiVC close to SiC surfaces is a promising spin defect for quantum applications, similar to its bulk counterpart.
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Affiliation(s)
- Yizhi Zhu
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Victor Wen-Zhe Yu
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Giulia Galli
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Department of Chemistry, University of Chicago, Chicago, Illinois 60637, United States
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2
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Utilizing photonic band gap in triangular silicon carbide structures for efficient quantum nanophotonic hardware. Sci Rep 2023; 13:4112. [PMID: 36914853 PMCID: PMC10011533 DOI: 10.1038/s41598-023-31362-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Accepted: 03/10/2023] [Indexed: 03/16/2023] Open
Abstract
Silicon carbide is among the leading quantum information material platforms due to the long spin coherence and single-photon emitting properties of its color center defects. Applications of silicon carbide in quantum networking, computing, and sensing rely on the efficient collection of color center emission into a single optical mode. Recent hardware development in this platform has focused on angle-etching processes that preserve emitter properties and produce triangularly shaped devices. However, little is known about the light propagation in this geometry. We explore the formation of photonic band gap in structures with a triangular cross-section, which can be used as a guiding principle in developing efficient quantum nanophotonic hardware in silicon carbide. Furthermore, we propose applications in three areas: the TE-pass filter, the TM-pass filter, and the highly reflective photonic crystal mirror, which can be utilized for efficient collection and propagating mode selection of light emission.
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3
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Ou H, Shi X, Lu Y, Kollmuss M, Steiner J, Tabouret V, Syväjärvi M, Wellmann P, Chaussende D. Novel Photonic Applications of Silicon Carbide. MATERIALS (BASEL, SWITZERLAND) 2023; 16:1014. [PMID: 36770020 PMCID: PMC9919445 DOI: 10.3390/ma16031014] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/19/2022] [Revised: 01/05/2023] [Accepted: 01/17/2023] [Indexed: 06/18/2023]
Abstract
Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique photonic properties facilitated by the advances of nanotechnologies such as nanofabrication and nanofilm transfer. This review paper will start with the introduction of exceptional optical properties of silicon carbide. Then, a key structure, i.e., silicon carbide on insulator stack (SiCOI), is discussed which lays solid fundament for tight light confinement and strong light-SiC interaction in high quality factor and low volume optical cavities. As examples, microring resonator, microdisk and photonic crystal cavities are summarized in terms of quality (Q) factor, volume and polytypes. A main challenge for SiC photonic application is complementary metal-oxide-semiconductor (CMOS) compatibility and low-loss material growth. The state-of-the-art SiC with different polytypes and growth methods are reviewed and a roadmap for the loss reduction is predicted for photonic applications. Combining the fact that SiC possesses many different color centers with the SiCOI platform, SiC is also deemed to be a very competitive platform for future quantum photonic integrated circuit applications. Its perspectives and potential impacts are included at the end of this review paper.
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Affiliation(s)
- Haiyan Ou
- Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads, Building 343, 2800 Kongens Lyngby, Denmark
| | - Xiaodong Shi
- Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads, Building 343, 2800 Kongens Lyngby, Denmark
| | - Yaoqin Lu
- Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads, Building 343, 2800 Kongens Lyngby, Denmark
| | - Manuel Kollmuss
- Crystal Growth Lab, Materials Department 6 (I-Meet), FAU Friedrich-Alexander University Erlangen-Nürnberg, Martensstr. 7, D-91058 Erlangen, Germany
| | - Johannes Steiner
- Crystal Growth Lab, Materials Department 6 (I-Meet), FAU Friedrich-Alexander University Erlangen-Nürnberg, Martensstr. 7, D-91058 Erlangen, Germany
| | - Vincent Tabouret
- Université Grenoble Alpes, CNRS, Grenoble INP, SIMaP, 38000 Grenoble, France
| | | | - Peter Wellmann
- Crystal Growth Lab, Materials Department 6 (I-Meet), FAU Friedrich-Alexander University Erlangen-Nürnberg, Martensstr. 7, D-91058 Erlangen, Germany
| | - Didier Chaussende
- Université Grenoble Alpes, CNRS, Grenoble INP, SIMaP, 38000 Grenoble, France
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4
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Jurgen von Bardeleben H, Cantin JL, Gerstmann U, Schmidt WG, Biktagirov T. Spin Polarization, Electron-Phonon Coupling, and Zero-Phonon Line of the NV Center in 3 C-SiC. NANO LETTERS 2021; 21:8119-8125. [PMID: 34581585 DOI: 10.1021/acs.nanolett.1c02564] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The nitrogen-vacancy (NV) center in 3C-SiC, the analog of the NV center in diamond, has recently emerged as a solid-state qubit with competitive properties and significant technological advantages. Combining first-principles calculations and magnetic resonance spectroscopy, we provide thorough insight into its magneto-optical properties. By applying resonantly excited electron paramagnetic resonance spectroscopy, we identified the zero-phonon absorption line of the 3A2 → 3E transition at 1289 nm (within the telecom O-band) and measured its phonon sideband, the analysis of which reveals a Huang-Rhys factor of S = 2.85 and a Debye-Waller factor of 5.8%. The low-temperature spin-lattice relaxation time was found to be exceptionally long (T1 = 17 s at 4 K). All these properties make NV in 3C-SiC a strong competitor for qubit applications. In addition, the strong variation of the zero-field splitting in the range 4-380 K allows its application for nanoscale thermal sensing.
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Affiliation(s)
- Hans Jurgen von Bardeleben
- Sorbonne Université, Institut des Nanosciences de Paris, UMR 7588 au CNRS 4, place Jussieu, 75005 Paris, France
| | - Jean-Louis Cantin
- Sorbonne Université, Institut des Nanosciences de Paris, UMR 7588 au CNRS 4, place Jussieu, 75005 Paris, France
| | - Uwe Gerstmann
- Universität Paderborn, Department Physik, Warburger Str. 100, 33098 Paderborn, Germany
| | - Wolf Gero Schmidt
- Universität Paderborn, Department Physik, Warburger Str. 100, 33098 Paderborn, Germany
| | - Timur Biktagirov
- Universität Paderborn, Department Physik, Warburger Str. 100, 33098 Paderborn, Germany
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5
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Lu X, Lee JY, Lin Q. Silicon carbide zipper photonic crystal optomechanical cavities. APPLIED PHYSICS LETTERS 2020; 116:221104. [PMID: 32549586 PMCID: PMC7272204 DOI: 10.1063/5.0010078] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2020] [Accepted: 05/27/2020] [Indexed: 06/11/2023]
Abstract
We demonstrate a silicon carbide (SiC) zipper photonic crystal optomechanical cavity. The device is on a 3C-SiC-on-silicon platform and has a compact footprint of ∼30 × 1 μm. The device shows an optical quality of 2800 at telecom and a mechanical quality of 9700 at 12 MHz with an effective mass of ∼3.76 pg. The optical mode and mechanical mode exhibit strong nonlinear interaction, namely, the quadratic spring effect, with a nonlinear spring constant of 3.3 × 104 MHz2/nm. The SiC zipper cavity is potentially useful in sensing and metrology in harsh environments.
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Affiliation(s)
- Xiyuan Lu
- Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA
| | - Jonathan Y. Lee
- Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627, USA
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6
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Sabri L, Shahabadi M, Forooraghi K, Ghaffari-Miab M. Interaction of two guided-mode resonances in an all-dielectric photonic crystal for uniform SERS. OPTICS EXPRESS 2020; 28:10467-10476. [PMID: 32225630 DOI: 10.1364/oe.389524] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/30/2020] [Accepted: 03/18/2020] [Indexed: 06/10/2023]
Abstract
For sensing and imaging applications of surface-enhanced Raman scattering (SERS), one needs a substrate with the capability of generating a consistent and uniform response and increased signal enhancement. To this goal, we propose a photonic-crystal (PC) structure capable of supporting large field enhancement due to its high quality-factor resonance. Moreover, we demonstrate that the interaction of two modes of this all-dielectric PC can provide an almost uniform field enhancement across the unit cell of the PC. This is of practical importance for SERS applications. The designed structure can support a maximum field enhancement of 70 and 97 percent of uniformity.
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7
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Powell K, Shams-Ansari A, Desai S, Austin M, Deng J, Sinclair N, Lončar M, Yi X. High-Q suspended optical resonators in 3C silicon carbide obtained by thermal annealing. OPTICS EXPRESS 2020; 28:4938-4949. [PMID: 32121724 DOI: 10.1364/oe.381601] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2019] [Accepted: 01/27/2020] [Indexed: 06/10/2023]
Abstract
We fabricate suspended single-mode optical waveguides and ring resonators in 3C silicon carbide (SiC) that operate at telecommunication wavelength, and leverage post-fabrication thermal annealing to minimize optical propagation losses. Annealed optical resonators yield quality factors of over 41,000, which corresponds to a propagation loss of 7 dB/cm, and is a significant improvement over the 24 dB/cm in the case of the non-annealed chip. This improvement is attributed to the enhancement of SiC crystallinity and a significant reduction of waveguide surface roughness, from 2.4 nm to below 1.7 nm. The latter is attributed to surface layer oxide growth during the annealing step. We confirm that the thermo-optic coefficient, an important parameter governing high-power and temperature-dependent performance of SiC, does not vary with annealing and is comparable to that of bulk SiC. Our annealing-based approach, which is especially suitable for suspended structures, offers a straightforward way to realize high-performance 3C-SiC integrated circuits.
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8
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Li Q, Wang JF, Yan FF, Cheng ZD, Liu ZH, Zhou K, Guo LP, Zhou X, Zhang WP, Wang XX, Huang W, Xu JS, Li CF, Guo GC. Nanoscale depth control of implanted shallow silicon vacancies in silicon carbide. NANOSCALE 2019; 11:20554-20561. [PMID: 31432857 DOI: 10.1039/c9nr05938e] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Color centers in silicon carbide have recently attracted broad interest as high bright single photon sources and defect spins with long coherence time at room temperature. There have been several methods to generate silicon vacancy defects with excellent spin properties in silicon carbide, such as electron irradiation and ion implantation. However, little is known about the depth distribution and nanoscale depth control of the shallow defects. Here, a method is presented to precisely control the depths of the ion implantation induced shallow silicon vacancy defects in silicon carbide by using reactive ion etching with little surface damage. After optimizing the major etching parameters, a slow and stable etching rate of about 5.5 ± 0.5 nm min-1 can be obtained. By successive nanoscale plasma etching, the shallow defects are brought close to the surface step by step. The photoluminescence spectrum and optically detected magnetic resonance spectra are measured, which confirm that there were no plasma-induced optical and spin property changes of the defects. By tracing the mean counts of the remaining defects after each etching process, the depth distribution of the defects can be obtained for various implantation conditions. Moreover, the spin coherence time T2* of the generated VSi defects is detected at different etch depths, which greatly decreases when the depth is less than 25 nm. The method of nanoscale depth control of silicon vacancies would pave the way for investigating the surface spin properties and the applications in nanoscale sensing and quantum photonics.
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Affiliation(s)
- Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Fei-Fei Yan
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Ze-Di Cheng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Zheng-Hao Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Kun Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Li-Ping Guo
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People's Republic of China
| | - Xiong Zhou
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People's Republic of China
| | - Wei-Ping Zhang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People's Republic of China
| | - Xiu-Xia Wang
- Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Wei Huang
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
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9
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Martini F, Gaggero A, Mattioli F, Leoni R. Single photon detection with superconducting nanowires on crystalline silicon carbide. OPTICS EXPRESS 2019; 27:29669-29675. [PMID: 31684224 DOI: 10.1364/oe.27.029669] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2019] [Accepted: 07/24/2019] [Indexed: 06/10/2023]
Abstract
Silicon carbide (SiC) is among the most promising optical materials for the realization of classical and quantum photonics, due to the simultaneous presence of quantum emitters and a non-centrosymmetric crystal structure. In recent years, progress have been made in the development of SiC integrated optical components making this a mature platform for the implementation of quantum experiments on chip. Toward this scope, the fabrication of a single photon detector that can be implemented on top of a photonic circuit is essential to achieve a monolithic integration of all the fundamental building blocks required for photonic quantum technologies. Here we demonstrate for the first time single photon detection with superconducting nanowires on top of a bare 3C SiC layer using a novel approach for the fiber-to-detector coupling that allows the optical characterization of multiple detectors without the use of neither cryogenic positioners nor the micromachining of the substrate.
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10
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Lu X, Lee JY, Rogers SD, Lin Q. Silicon carbide double-microdisk resonator. OPTICS LETTERS 2019; 44:4295-4298. [PMID: 31465386 DOI: 10.1364/ol.44.004295] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2019] [Accepted: 07/31/2019] [Indexed: 06/10/2023]
Abstract
We demonstrate the first silicon carbide (SiC) double-microdisk resonator (DMR). The device has a compact footprint with a radius of 24 μm and operates in the ITU high frequency range (3-30 MHz). We develop a multi-layer nanofabrication recipe that yields high optical quality (Q∼105) for the SiC DMR. Because of its strong optomechanical interaction, we observe the thermal-Brownian motions of mechanical modes in a SiC DMR directly at room temperature for the first time, to the best of our knowledge. The observed mechanical modes include fundamental/second-order common modes and fundamental differential (D1) modes. The D1 modes have high mechanical qualities >3800 at around 18.4 MHz tested in vacuum. We further show that optomechanical interactions, including linear and nonlinear optomechanical spring effects, can be observed in a SiC DMR at sub-milliwatt optical power. The SiC DMR has great potential for low-power optomechanical sensing applications in harsh environments.
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11
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Fan T, Moradinejad H, Wu X, Eftekhar AA, Adibi A. High-Q integrated photonic microresonators on 3C-SiC-on-insulator (SiCOI) platform. OPTICS EXPRESS 2018; 26:25814-25826. [PMID: 30469677 DOI: 10.1364/oe.26.025814] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/25/2018] [Accepted: 09/06/2018] [Indexed: 06/09/2023]
Abstract
We report a high-quality 3C-silicon carbide (SiC)-on-insulator (SiCOI) integrated photonic material platform formed by wafer bonding of crystalline 3C-SiC to a silicon oxide (SiO2)-on-silicon (Si) substrate. This material platform enables to develop integrated photonic devices in SiC without the need for undercutting the Si substrate, in contrast to the structures formed on conventional 3C-SiC-on-Si platforms. In addition, we show a unique process in the SiCOI platform for minimizing the effect of lattice mismatch during the growth of SiC on Si through polishing after bonding. This results in a high-quality SiCOI platform that enables record high Qs of 142,000 in 40 µm radius SiC microring resonators. The resulting SiCOI platform has a great potential for a wide range of applications in integrated optics, including nonlinear optical devices, quantum optical devices, and high-power optical devices.
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12
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Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications. Sci Rep 2017; 7:17734. [PMID: 29255167 PMCID: PMC5735178 DOI: 10.1038/s41598-017-17985-9] [Citation(s) in RCA: 30] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2017] [Accepted: 12/01/2017] [Indexed: 11/30/2022] Open
Abstract
This work examines the stability of epitaxial 3C-SiC/Si heterojunctions subjected to heat treatments between 1000 °C and 1300 °C. Because of the potential for silicon carbide in high temperature and harsh environment applications, and the economic advantages of growing the 3C-SiC polytype on large diameter silicon wafers, its stability after high temperature processing is an important consideration. Yet recently, this has been thrown into question by claims that the heterojunction suffers catastrophic degradation at temperatures above 1000 °C. Here we present results showing that the heterojunction maintains excellent diode characteristics following heat treatment up to 1100 °C and while some changes were observed between 1100 °C and 1300 °C, diodes maintained their rectifying characteristics, enabling compatibility with a large range of device fabrication. The parameters of as-grown diodes were J0 = 1 × 10−11 A/mm2, n = 1.02, and +/−2V rectification ratio of 9 × 106. Capacitance and thermal current-voltage analysis was used to characterize the excess current leakage mechanism. The change in diode characteristics depends on diode area, with larger areas (1 mm2) having reduced rectification ratio while smaller areas (0.04 mm2) maintained excellent characteristics of J0 = 2 × 10−10 A/mm2, n = 1.28, and +/−2V ratio of 3 × 106. This points to localized defect regions degrading after heat treatment rather than a fundamental issue of the heterojunction.
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13
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Bracher DO, Zhang X, Hu EL. Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center. Proc Natl Acad Sci U S A 2017; 114:4060-4065. [PMID: 28373543 PMCID: PMC5402470 DOI: 10.1073/pnas.1704219114] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Point defects in silicon carbide are rapidly becoming a platform of great interest for single-photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCCs) can serve as an efficient light-matter interface both to augment the defect emission and to aid in studying the defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers. These cavities are used to achieve Purcell enhancement of two closely spaced defect zero-phonon lines (ZPL). Enhancements of >80-fold are measured using multiple techniques. Additionally, the nature of the cavity coupling to the different ZPLs is examined.
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Affiliation(s)
- David O Bracher
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138;
- Department of Physics, Harvard University, Cambridge, MA 02138
| | - Xingyu Zhang
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
| | - Evelyn L Hu
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138;
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14
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Radulaski M, Widmann M, Niethammer M, Zhang JL, Lee SY, Rendler T, Lagoudakis KG, Son NT, Janzén E, Ohshima T, Wrachtrup J, Vučković J. Scalable Quantum Photonics with Single Color Centers in Silicon Carbide. NANO LETTERS 2017; 17:1782-1786. [PMID: 28225630 DOI: 10.1021/acs.nanolett.6b05102] [Citation(s) in RCA: 31] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Silicon carbide is a promising platform for single photon sources, quantum bits (qubits), and nanoscale sensors based on individual color centers. Toward this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1400 nm diameters. We obtain high collection efficiency of up to 22 kcounts/s optical saturation rates from a single silicon vacancy center while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits.
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Affiliation(s)
- Marina Radulaski
- E. L. Ginzton Laboratory, Stanford University , Stanford, California 94305, United States
| | - Matthias Widmann
- 3rd Institute of Physics, IQST, and Research Center SCOPE, University of Stuttgart , 70569 Stuttgart, Germany
| | - Matthias Niethammer
- 3rd Institute of Physics, IQST, and Research Center SCOPE, University of Stuttgart , 70569 Stuttgart, Germany
| | - Jingyuan Linda Zhang
- E. L. Ginzton Laboratory, Stanford University , Stanford, California 94305, United States
| | - Sang-Yun Lee
- 3rd Institute of Physics, IQST, and Research Center SCOPE, University of Stuttgart , 70569 Stuttgart, Germany
- Center for Quantum Information, Korea Institute of Science and Technology (KIST) , Seoul, 02792, Republic of Korea
| | - Torsten Rendler
- 3rd Institute of Physics, IQST, and Research Center SCOPE, University of Stuttgart , 70569 Stuttgart, Germany
| | | | - Nguyen Tien Son
- Department of Physics, Chemistry, and Biology, Linköping University , SE-58183 Linköping, Sweden
| | - Erik Janzén
- Department of Physics, Chemistry, and Biology, Linköping University , SE-58183 Linköping, Sweden
| | - Takeshi Ohshima
- National Institutes for Quantum and Radiological Science and Technology (QST) , Takasaki, Gunma 370-1292, Japan
| | - Jörg Wrachtrup
- 3rd Institute of Physics, IQST, and Research Center SCOPE, University of Stuttgart , 70569 Stuttgart, Germany
| | - Jelena Vučković
- E. L. Ginzton Laboratory, Stanford University , Stanford, California 94305, United States
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15
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Lohrmann A, Johnson BC, McCallum JC, Castelletto S. A review on single photon sources in silicon carbide. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2017; 80:034502. [PMID: 28139468 DOI: 10.1088/1361-6633/aa5171] [Citation(s) in RCA: 48] [Impact Index Per Article: 6.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
This paper summarizes key findings in single-photon generation from deep level defects in silicon carbide (SiC) and highlights the significance of these individually addressable centers for emerging quantum applications. Single photon emission from various defect centers in both bulk and nanostructured SiC are discussed as well as their formation and possible integration into optical and electrical devices. The related measurement protocols, the building blocks of quantum communication and computation network architectures in solid state systems, are also summarized. This includes experimental methodologies developed for spin control of different paramagnetic defects, including the measurement of spin coherence times. Well established doping, and micro- and nanofabrication procedures for SiC may allow the quantum properties of paramagnetic defects to be electrically and mechanically controlled efficiently. The integration of single defects into SiC devices is crucial for applications in quantum technologies and we will review progress in this direction.
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Affiliation(s)
- A Lohrmann
- School of Physics, The University of Melbourne, Victoria 3010, Australia
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16
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Byrd JN, Lutz JJ, Jin Y, Ranasinghe DS, Montgomery JA, Perera A, Duan XF, Burggraf LW, Sanders BA, Bartlett RJ. Predictive coupled-cluster isomer orderings for some SinCm(m,n≤ 12) clusters: A pragmatic comparison between DFT and complete basis limit coupled-cluster benchmarks. J Chem Phys 2016; 145:024312. [DOI: 10.1063/1.4955196] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Affiliation(s)
- Jason N. Byrd
- Quantum Theory Project, University of Florida, Gainesville, Florida 32611, USA
- ENSCO, Inc., 4849 North Wickham Road, Melbourne, Florida 32940, USA
| | - Jesse J. Lutz
- Quantum Theory Project, University of Florida, Gainesville, Florida 32611, USA
| | - Yifan Jin
- Quantum Theory Project, University of Florida, Gainesville, Florida 32611, USA
| | | | - John A. Montgomery
- Department of Physics, University of Connecticut, Storrs, Connecticut 06269, USA
| | - Ajith Perera
- Quantum Theory Project, University of Florida, Gainesville, Florida 32611, USA
| | - Xiaofeng F. Duan
- Air Force Institute of Technology, Wright-Patterson Air Force Base, Ohio 45433, USA
- Air Force Research Laboratory DoD Supercomputing Resource Center, Wright-Patterson Air Force Base, Ohio 45433, USA
| | - Larry W. Burggraf
- Air Force Institute of Technology, Wright-Patterson Air Force Base, Ohio 45433, USA
| | - Beverly A. Sanders
- Quantum Theory Project, University of Florida, Gainesville, Florida 32611, USA
- Department of Computer and Information Science and Engineering, University of Florida, Gainesville, Florida 32611, USA
| | - Rodney J. Bartlett
- Quantum Theory Project, University of Florida, Gainesville, Florida 32611, USA
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17
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Zhang JL, Ishiwata H, Babinec TM, Radulaski M, Müller K, Lagoudakis KG, Dory C, Dahl J, Edgington R, Soulière V, Ferro G, Fokin AA, Schreiner PR, Shen ZX, Melosh NA, Vučković J. Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers. NANO LETTERS 2016; 16:212-217. [PMID: 26695059 DOI: 10.1021/acs.nanolett.5b03515] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV(-)) color centers in diamond as quantum emitters. Hybrid diamond-SiC structures are realized by combining the growth of nano- and microdiamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV(-) color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ion-implantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV(-) on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV(-) centers. Scanning confocal photoluminescence measurements reveal optically active SiV(-) lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow line widths and small inhomogeneous broadening of SiV(-) lines from all-diamond nanopillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV(-) centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing.
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Affiliation(s)
- Jingyuan Linda Zhang
- E. L. Ginzton Laboratory, Stanford University , Stanford, California 94305, United States
| | - Hitoshi Ishiwata
- Geballe Laboratory for Advanced Materials, Stanford University , Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, United States
| | - Thomas M Babinec
- E. L. Ginzton Laboratory, Stanford University , Stanford, California 94305, United States
| | - Marina Radulaski
- E. L. Ginzton Laboratory, Stanford University , Stanford, California 94305, United States
| | - Kai Müller
- E. L. Ginzton Laboratory, Stanford University , Stanford, California 94305, United States
| | | | - Constantin Dory
- E. L. Ginzton Laboratory, Stanford University , Stanford, California 94305, United States
| | - Jeremy Dahl
- Geballe Laboratory for Advanced Materials, Stanford University , Stanford, California 94305, United States
| | - Robert Edgington
- Geballe Laboratory for Advanced Materials, Stanford University , Stanford, California 94305, United States
| | - Veronique Soulière
- Laboratoire des Multimateriaux et Interfaces, Université de Lyon , 43 Boulevard du 11 Novembre 1918, 69622 Villeurbanne Cedex, France
| | - Gabriel Ferro
- Laboratoire des Multimateriaux et Interfaces, Université de Lyon , 43 Boulevard du 11 Novembre 1918, 69622 Villeurbanne Cedex, France
| | - Andrey A Fokin
- Institute of Organic Chemistry, Justus-Liebig University , Heinrich-Buff-Ring 17, 35392 Giessen, Germany
| | - Peter R Schreiner
- Institute of Organic Chemistry, Justus-Liebig University , Heinrich-Buff-Ring 17, 35392 Giessen, Germany
| | - Zhi-Xun Shen
- Geballe Laboratory for Advanced Materials, Stanford University , Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, United States
| | - Nicholas A Melosh
- Geballe Laboratory for Advanced Materials, Stanford University , Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, United States
| | - Jelena Vučković
- E. L. Ginzton Laboratory, Stanford University , Stanford, California 94305, United States
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18
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Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer. Sci Rep 2015; 5:17026. [PMID: 26601894 PMCID: PMC4658498 DOI: 10.1038/srep17026] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/27/2015] [Accepted: 10/21/2015] [Indexed: 11/09/2022] Open
Abstract
Single-crystal silicon carbide (SiC) thin-films on silicon (Si) were used for the fabrication and characterization of electrically conductive distributed Bragg reflectors (DBRs) on 100 mm Si wafers. The DBRs, each composed of 3 alternating layers of SiC and Al(Ga)N grown on Si substrates, show high wafer uniformity with a typical maximum reflectance of 54% in the blue spectrum and a stopband (at 80% maximum reflectance) as large as 100 nm. Furthermore, high vertical electrical conduction is also demonstrated resulting to a density of current exceeding 70 A/cm(2) above 1.5 V. Such SiC/III-N DBRs with high thermal and electrical conductivities could be used as pseudo-substrate to enhance the efficiency of SiC-based and GaN-based optoelectronic devices on large Si wafers.
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19
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Lu X, Lee JY, Lin Q. High-frequency and high-quality silicon carbide optomechanical microresonators. Sci Rep 2015; 5:17005. [PMID: 26585637 PMCID: PMC4653626 DOI: 10.1038/srep17005] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/27/2015] [Accepted: 10/22/2015] [Indexed: 11/26/2022] Open
Abstract
Silicon carbide (SiC) exhibits excellent material properties attractive for broad applications. We demonstrate the first SiC optomechanical microresonators that integrate high mechanical frequency, high mechanical quality, and high optical quality into a single device. The radial-breathing mechanical mode has a mechanical frequency up to 1.69 GHz with a mechanical Q around 5500 in atmosphere, which corresponds to a fm · Qm product as high as 9.47 × 10(12) Hz. The strong optomechanical coupling allows us to efficiently excite and probe the coherent mechanical oscillation by optical waves. The demonstrated devices, in combination with the superior thermal property, chemical inertness, and defect characteristics of SiC, show great potential for applications in metrology, sensing, and quantum photonics, particularly in harsh environments that are challenging for other device platforms.
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Affiliation(s)
- Xiyuan Lu
- Department of Physics and Astronomy, University of
Rochester, Rochester, NY
14627, USA
| | - Jonathan Y. Lee
- Department of Electrical and Computer Engineering, University of
Rochester, Rochester, NY
14627, USA
| | - Qiang Lin
- Department of Electrical and Computer Engineering, University of
Rochester, Rochester, NY
14627, USA
- Institute of Optics, University of Rochester,
Rochester, NY
14627, USA
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20
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Bracher DO, Hu EL. Fabrication of High-Q Nanobeam Photonic Crystals in Epitaxially Grown 4H-SiC. NANO LETTERS 2015; 15:6202-6207. [PMID: 26305122 DOI: 10.1021/acs.nanolett.5b02542] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Silicon carbide (SiC) is an intriguing material due to the presence of spin-active point defects in several polytypes, including 4H-SiC. For many quantum information and sensing applications involving such point defects, it is important to couple their emission to high quality optical cavities. Here we present the fabrication of 1D nanobeam photonic crystal cavities (PCC) in 4H-SiC using a dopant-selective etch to undercut a homoepitaxially grown epilayer of p-type 4H-SiC. These are the first PCCs demonstrated in 4H-SiC and show high quality factors (Q) of up to ∼7000 as well as low modal volumes of <0.5 (λ/n)(3). We take advantage of the high device yield of this fabrication method to characterize hundreds of devices and determine which PCC geometries are optimal. Additionally, we demonstrate two methods to tune the resonant wavelengths of the PCCs over 5 nm without significant degradation of the Q. Lastly, we characterize nanobeam PCCs coupled to luminescence from silicon vacancy point defects (V1, V2) in 4H-SiC. The fundamental modes of two such PCCs are tuned into spectral overlap with the zero phonon line (ZPL) of the V2 center, resulting in an intensity increase of up to 3-fold. These results are important steps on the path to developing 4H-SiC as a platform for quantum information and sensing.
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Affiliation(s)
- David O Bracher
- Department of Physics and ‡School of Engineering and Applied Sciences, Harvard University , Cambridge, Massachusetts 02138, United States
| | - Evelyn L Hu
- Department of Physics and ‡School of Engineering and Applied Sciences, Harvard University , Cambridge, Massachusetts 02138, United States
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21
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Lu X, Lee JY, Rogers S, Lin Q. Optical Kerr nonlinearity in a high-Q silicon carbide microresonator. OPTICS EXPRESS 2014; 22:30826-30832. [PMID: 25607031 DOI: 10.1364/oe.22.030826] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We demonstrate a high-Q amorphous silicon carbide (a-SiC) microresonator with optical Q as high as 1.3 × 10(5). The high optical quality allows us to characterize the third-order nonlinear susceptibility of a-SiC. The Kerr nonlinearity is measured to be n2 = (5.9 ± 0.7) × 10(−15) cm(2)/W in the telecom band around 1550 nm. The strong Kerr nonlinearity and high optical quality render a-SiC microresonators a promising platform for integrated nonlinear photonics.
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22
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Buckley S, Radulaski M, Zhang JL, Petykiewicz J, Biermann K, Vučković J. Multimode nanobeam cavities for nonlinear optics: high quality resonances separated by an octave. OPTICS EXPRESS 2014; 22:26498-26509. [PMID: 25401801 DOI: 10.1364/oe.22.026498] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We demonstrate the design, fabrication and characterization of nanobeam cavities with multiple higher order modes. Designs with two high Q modes with frequency separations of an octave are introduced, and we fabricate such cavities exhibiting resonances with wavelength separations of up to 740 nm.
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23
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Castelletto S, Johnson BC, Zachreson C, Beke D, Balogh I, Ohshima T, Aharonovich I, Gali A. Room temperature quantum emission from cubic silicon carbide nanoparticles. ACS NANO 2014; 8:7938-47. [PMID: 25036593 DOI: 10.1021/nn502719y] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
The photoluminescence (PL) arising from silicon carbide nanoparticles has so far been associated with the quantum confinement effect or to radiative transitions between electronically active surface states. In this work we show that cubic phase silicon carbide nanoparticles with diameters in the range 45-500 nm can host other point defects responsible for photoinduced intrabandgap PL. We demonstrate that these nanoparticles exhibit single photon emission at room temperature with record saturation count rates of 7 × 10(6) counts/s. The realization of nonclassical emission from SiC nanoparticles extends their potential use from fluorescence biomarker beads to optically active quantum elements for next generation quantum sensing and nanophotonics. The single photon emission is related to single isolated SiC defects that give rise to states within the bandgap.
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Affiliation(s)
- Stefania Castelletto
- School of Aerospace, Mechanical and Manufacturing Engineering, RMIT University , Melbourne, Victoria 3000, Australia
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