-1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond

Waveguide-integrated twisted bilayer graphene photodetectors

Graphene photodetectors have exhibited high bandwidth and capability of being integrated with silicon photonics (SiPh), holding promise for future optical communication devices. However, they usually suffer from a low photoresponsivity due to weak optical absorption. In this work, we have implemented SiPh-integrated twisted bilayer graphene (tBLG) detectors and reported a responsivity of 0.65 A W-1 for telecom wavelength 1,550 nm. The high responsivity enables a 3-dB bandwidth of >65 GHz and a high data stream rate of 50 Gbit s-1. Such high responsivity is attributed to the enhanced optical absorption, which is facilitated by van Hove singularities in the band structure of high-mobility tBLG with 4.1o twist angle. The uniform performance of the fabricated photodetector arrays demonstrates a fascinating prospect of large-area tBLG as a material candidate for heterogeneous integration with SiPh.

PIC-integrable high-responsivity germanium waveguide photodetector in the C + L band

We report the demonstration of a germanium waveguide p-i-n photodetector (PD) for the C + L band light detection. Tensile strain is transferred into the germanium layer using a SiN stressor on top surface of the germanium. The simulation and experimental results show that the trenches must be formed around the device, so that the strain can be transferred effectively. The device exhibits an almost flat responsivity with respect to the wavelength range from 1510 nm to 1630 nm, and high responsivity of over 1.1 A/W is achieved at 1625 nm. The frequency response measurement reveals that a high 3 dB bandwidth (f3dB) of over 50 GHz can be obtained. The realization of the photonic-integrated circuits (PIC)-integrable waveguide Ge PDs paves the way for future telecom applications in the C + L band.

Optical Interconnects Finally Seeing the Light in Silicon Photonics: Past the Hype

Electrical interconnects are becoming a bottleneck in the way towards meeting future performance requirements of integrated circuits. Moore's law, which observes the doubling of the number of transistors in integrated circuits every couple of years, can no longer be maintained due to reaching a physical barrier for scaling down the transistor's size lower than 5 nm. Heading towards multi-core and many-core chips, to mitigate such a barrier and maintain Moore's law in the future, is the solution being pursued today. However, such distributed nature requires a large interconnect network that is found to consume more than 80% of the microprocessor power. Optical interconnects represent one of the viable future alternatives that can resolve many of the challenges faced by electrical interconnects. However, reaching a maturity level in optical interconnects that would allow for the transition from electrical to optical interconnects for intra-chip and inter-chip communication is still facing several challenges. A review study is required to compare the recent developments in the optical interconnects with the performance requirements needed to reach the required maturity level for the transition to happen. This review paper dissects the optical interconnect system into its components and explains the foundational concepts behind the various passive and active components along with the performance metrics. The performance of different types of on-chip lasers, grating and edge couplers, modulators, and photodetectors are compared. The potential of a slot waveguide is investigated as a new foundation since it allows for guiding and confining light into low index regions of a few tens of nanometers in cross-section. Additionally, it can be tuned to optimize transmissions over 90° bends. Hence, high-density opto-electronic integrated circuits with optical interconnects reaching the dimensions of their electrical counterparts are becoming a possibility. The latest complete optical interconnect systems realized so far are reviewed as well.

On-chip optical interconnection using integrated germanium light emitters and photodetectors

Germanium (Ge) is an attractive material for monolithic light sources and photodetectors, but it is not easy to integrate Ge light sources and photodetectors because their optimum device structures differ. In this study, we developed a monolithically integrated Ge light emitting diode (LED) that enables current injection at high density and a Ge photodiode (PD) having low dark current, and we fabricated an on-chip optical interconnection system consisting of the Ge LED, Ge PD, and Si waveguide. We investigated the properties of the fabricated Ge LED and PD and demonstrated on-chip optical interconnection.

Gourd-shaped hole array germanium (Ge)-on-insulator photodiodes with improved responsivity and specific detectivity at 1,550 nm

Gourd-shaped hole array germanium (Ge) vertical p-i-n photodiodes were designed and demonstrated on a germanium-on-insulator (GOI) substrate with the excellent responsivity of 0.74 A/W and specific detectivity of 3.1 × 10¹⁰ cm·Hz^1/2/W. It is calculated that the gourd-shaped hole design provides a higher optical absorption compared to a cylinder-shaped hole design. As a result, the external quantum efficiency for the gourd-shaped hole array photodetector was enhanced by ∼2.5× at 1,550 nm, comparing with hole-free array photodetectors. In addition, the extracted specific detectivity is superior to that of commercial bulk Ge photodiodes. The 3-dB bandwidth for the hole array photodetectors is improved by ∼10% due to a lower device capacitance. This work paves the way for low-cost and high-performance CMOS compatible photodetectors for Si-based photonic-integrated circuits.

Surface illuminated interdigitated Ge-on-Si photodetector with high responsivity

To address the problem of traditional surface illuminated detectors being of low responsivity, this work proposes a large-size interdigitated "finger-type" germanium-on-silicon (Ge-on-Si) photodetector (PD) based on the surface illumination approach. For 1550 nm light with a surface incident power of -20 dBm at room temperature, the best responsivity of the PD achieved is ∼0.64 A/W at 0.5 V. At the same time, the optimal bandwidth reaches 1.537 MHz with 3.5 V applied voltage. In order to suppress the dark current induced noise, a Ge-on-Si avalanche photodiode (APD) with the interdigitated structure is designed. The avalanche voltage is designed ∼13.3 V at room temperature, and the dark current density in linear region is at mA/cm² order. We believe this type of device can be applied in weak light detection condition.

100 Gbit/s co-designed optical receiver with hybrid integration

We demonstrate a co-designed optical receiver, which is hybrid-integrated with a silicon-photonic photodetector (PD) and silicon-germanium (SiGe) trans-impedance amplifier (TIA). Accurate equivalent circuit models of PD and electrical parasitic of chip-on-board (COB) assembly are built for co-simulation with TIA. Inductive peaking and equalizer (EQ) techniques are proposed in the design of TIA to extend the bandwidth of the optical receiver. The measured electrical 3-dB bandwidth of TIA and optical-to-electrical (O-E) 3-dB bandwidth of optical receiver are above 36.8 GHz and 36 GHz, respectively. For the optical receiver, clear eye diagrams up to a data rate of 80 Gbit/s are realized. The bit-error ratios (BER) for the NRZ signal with a different bit rate and received optical power are experimentally measured, and 100 Gbit/s NRZ operation is successfully achieved with a soft-decision forward error correction (SD-FEC) threshold.

High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

In this article, we demonstrated novel methods to improve the performance of p-i-n photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a mesa diameter of 10 μm, the dark current at −1 V is 2.5 nA, which is 2.6-fold lower than that of the Ge PD processed on Si substrates. This improvement in dark current is due to the careful removal of the defected Ge layer, which is formed with the initial growth of Ge on Si. The bulk leakage current density and surface leakage density of the GOI detector at −1 V are as low as 1.79 mA/cm² and 0.34 μA/cm, respectively. GOI photodetectors with responsivity of 0.5 and 0.9 A/W at 1550 and 1310 nm wavelength are demonstrated. The optical performance of the GOI photodetector could be remarkably improved by integrating a tetraethylorthosilicate (TEOS) layer on the oxide side due to the better optical confinement and resonant cavity effect. These PDs with high performances and full compatibility with Si CMOS processes are attractive for applications in both telecommunications and monolithic optoelectronics integration on the same chip.

Increasing responsivity-bandwidth margin of germanium waveguide photodetector with simple corner reflector

The external bandwidth of germanium waveguide photodetectors (PDs) decreases with the device length due to the load and parasitic effects even if the internal one is less affected. Shortening PDs raises the external bandwidth but lowers the responsivity, introducing a trade-off between the two figures of merits. Here, we present a scheme of waveguide PDs based on total internal reflections of corner reflectors. The reflector can be easily fabricated with the standard photolithography at the end of PDs to efficiently reflect optical power back to germanium for additional absorption, allowing for further size reduction. The structure may render the optimization of PDs more flexible.

Highly Efficient Near-Infrared Detector Based on Optically Resonant Dielectric Nanodisks

Fast detection of near-infrared (NIR) photons with high responsivity remains a challenge for photodetectors. Germanium (Ge) photodetectors are widely used for near-infrared wavelengths but suffer from a trade-off between the speed of photodetection and quantum efficiency (or responsivity). To realize a high-speed detector with high quantum efficiency, a small-sized photodetector efficiently absorbing light is required. In this paper, we suggest a realization of a dielectric metasurface made of an array of subwavelength germanium PIN photodetectors. Due to the subwavelength size of each pixel, a high-speed photodetector with a bandwidth of 65 GHz has been achieved. At the same time, high quantum efficiency for near-infrared illumination can be obtained by the engineering of optical resonant modes to localize optical energy inside the intrinsic Ge disks. Furthermore, small junction capacitance and the possibility of zero/low bias operation have been shown. Our results show that all-dielectric metasurfaces can improve the performance of photodetectors.

Low-power and high-detectivity Ge photodiodes by in-situ heavy As doping during Ge-on-Si seed layer growth

Germanium (Ge)-based photodetectors have become one of the mainstream components in photonic-integrated circuits (PICs). Many emerging PIC applications require the photodetectors to have high detectivity and low power consumption. Herein, we demonstrate high-detectivity Ge vertical p-i-n photodiodes on an in-situ heavily arsenic (As)-doped Ge-on-Si platform. The As doping was incorporated during the initial Ge-on-Si seed layer growth. The grown film exhibits an insignificant up-diffusion of the As dopants. The design results in a ∼45× reduction on the dark current and consequently a ∼5× enhancement on the specific detectivity (D*) at low reverse bias. The improvements are mainly attributed to the improved epi-Ge crystal quality and the narrowing of the device junction depletion width. Furthermore, a significant deviation on the AsH₃ flow finds a negligible effect on the D* enhancement. This unconventional but low-cost approach provides an alternative solution for future high-detectivity and low-power photodiodes in PICs. This method can be extended to the use of other n-type dopants (e.g., phosphorus (P) and antimony (Sb)) as well as to the design of other types of photodiodes (e.g., waveguide-integrated).

Heterostructured silicon-germanium-silicon p-i-n avalanche photodetectors for chip-integrated optoelectronics -INVITED

Optical photodetectors are at the forefront of photonic research since the rise of integrated optics. Photodetectors are fundamental building blocks for chip-scale optoelectronics, enabling conversion of light into an electrical signal. Such devices play a key role in many surging applications from communication and computation to sensing, biomedicine and health monitoring, to name a few. However, chip integration of optical photodetectors with improved performances is an on-going challenge for mainstream optical communications at near-infrared wavelengths. Here, we present recent advances in heterostructured silicon-germanium-silicon p-i-n photodetectors, enabling high-speed detection on a foundry-compatible monolithic platform.

Supermode Hybridization: A Material-Independent Route toward Record Schottky Detection Sensitivity Using <0.05 μm3 Amorphous Absorber Volume

Schottky photodetectors are attractive for CMOS-compatible photonic integrated circuits, but the inability to simultaneously optimize the metal emitter thickness for photon absorption and hot carrier emission limits the detection efficiency and sensitivity. Here, we propose and experimentally demonstrate a supermode hybridization waveguiding effect that can overcome the trade-off. By introducing structural asymmetry into coupled plasmonic nanostructures, hybridization-induced field enhancement can help ultrathin metal emitters to achieve greater optical absorption than bulk counterparts. Despite the use of amorphous materials with higher transport losses, our hybridized Schottky detectors demonstrate higher responsivity per device volume compared to crystalline-based and unhybridized Schottky designs with broadband (1.5-1.6 μm) and athermal (15-100 °C) behavior as well as record sensitivity of -55 dBm that approaches Ge counterparts that are 36 times larger. The hybridization effect can be utilized across diverse nanomaterial platforms to facilitate light-matter interaction, paving the way toward backend-compatible, chip-integrated photonics with greater manufacturing flexibility.

High-speed lateral PIN germanium photodetector with 4-directional light input

We experimentally demonstrate a high-speed lateral PIN junction configuration germanium photodetector (Ge-PD) with 4-directional light input. The typical internal responsivity is about 1.23 A/W at 1550 nm with 98% quantum efficiency and dark current 4 nA at 1V reverse-bias voltage. The equivalent circuit model and theoretical 3-dB opto-electrical (OE) bandwidth of Ge-PD are extracted and calculated, respectively. Compared to the conventional lateral PIN Ge-PD with 1-directional light input, our proposed device features uniform optical field distribution in the absorption region, which will be benefit to realize high-power and high-speed operation. In particular, in the condition of 0.8 mA photocurrent, the measured 3-dB OE bandwidth is about 17 GHz at bias voltage of -8 V which is well matched to the theoretical estimated bandwidth. With additional digital pre-compensations provided by the Keysight arbitrary waveform generator (AWG), the root raised cosine (RRC) filter and roll-off factor of 0.65 are employed at transmitter (TX) side without utilizing any offline digital signal processing (DSP) at receiver (RX) side. The 50 Gbit/s, 60 Gbit/s, 70 Gbit/s, and 80 Gbit/s non-return-to-zero (NRZ), and 60 Gbit/s, 70 Gbit/s, 80 Gbit/s, and 90 Gbit/s four-level pulse amplitude modulation (PAM-4) clear opening of eye diagrams are realized. In order to verify the high-power handling performance in high-speed data transmission, we also investigate the 20 Gbit/s NRZ eye diagram variations with the increasing of photocurrent.

Integrated Photodetectors Based on Group IV and Colloidal Semiconductors: Current State of Affairs

With the aim to take advantage from the existing technologies in microelectronics, photodetectors should be realized with materials compatible with them ensuring, at the same time, good performance. Although great efforts are made to search for new materials that can enhance performance, photodetector (PD) based on them results often expensive and difficult to integrate with standard technologies for microelectronics. For this reason, the group IV semiconductors, which are currently the main materials for electronic and optoelectronic devices fabrication, are here reviewed for their applications in light sensing. Moreover, as new materials compatible with existing manufacturing technologies, PD based on colloidal semiconductor are revised. This work is particularly focused on developments in this area over the past 5-10 years, thus drawing a line for future research.

Design of Ge1-xSnx-on-Si waveguide photodetectors featuring high-speed high-sensitivity photodetection in the C- to U-bands

We present the design of Ge_1-xSn_x-on-Si waveguide photodetectors for the applications in the C- to U-bands. The GeSn photodetectors have been studied in respect to responsivity, dark current, and bandwidth, with light butt- or evanescent-coupled from an Si waveguide. With the introduction of 4.5% Sn into Ge, the GeSn waveguide PD with evanescent-coupling exhibits high responsivity of 1.25 A/W and 3 dB bandwidth of 123.1 GHz at 1.675 µm. Further increasing the Sn composition cannot improve the absorption in the U-band significantly but does lead to poorer thermal stability and higher dark current. This work suggests a promising avenue for future high-speed high-responsivity photodetection in the C- to U-bands.

Silicon Waveguide Integrated with Germanium Photodetector for a Photonic-Integrated FBG Interrogator

We report a vertically coupled germanium (Ge) waveguide detector integrated on silicon-on-insulator waveguides and an optimized device structure through the analysis of the optical field distribution and absorption efficiency of the device. The photodetector we designed is manufactured by IMEC, and the tests show that the device has good performance. This study theoretically and experimentally explains the structure of Ge PIN and the effect of the photodetector (PD) waveguide parameters on the performance of the device. Simulation and optimization of waveguide detectors with different structures are carried out. The device’s structure, quantum efficiency, spectral response, response current, changes with incident light strength, and dark current of PIN-type Ge waveguide detector are calculated. The test results show that approximately 90% of the light is absorbed by a Ge waveguide with 20 μm Ge length and 500 nm Ge thickness. The quantum efficiency of the PD can reach 90.63%. Under the reverse bias of 1 V, 2 V and 3 V, the detector’s average responsiveness in C-band reached 1.02 A/W, 1.09 A/W and 1.16 A/W and the response time is 200 ns. The dark current is only 3.7 nA at the reverse bias voltage of −1 V. The proposed silicon-based Ge PIN PD is beneficial to the integration of the detector array for photonic integrated arrayed waveguide grating (AWG)-based fiber Bragg grating (FBG) interrogators.

Germanium photodetector with distributed absorption regions

The bandwidth and saturation power of germanium photodetectors are two crucial parameters for implementing analog and microwave photonics circuits. In conventional schemes, it is hard to optimize these two parameters simultaneously, due to different requirements for the size of absorption region. We report the design and demonstration of a high-power and high-speed germanium photodetector with distributed absorption regions. In this distributed-absorption photodetector (DAPD), the junction is formed by a multiple absorption region (n-cell) on a mutual substrate, and the input light is split and fed into the n cells. A comprehensive theoretical model is developed, and the device bandwidth and power loss in aspect of the number of cells is discussed. Experimentally, 2-, 4- and 8-cell DAPDs are investigated, and the 2-cell scheme shows the superior performance with the radio-frequency saturation photocurrent as high as 16.1 mA and the 3 dB bandwidth as high as 50 GHz. Without changing the standard process in the silicon photonic foundry, the DAPD can be seamlessly integrated with other photonics devices, and it is very attractive to applications such as integrated microwave photonics systems.

Wideband tunable microwave signal generation in a silicon-micro-ring-based optoelectronic oscillator

Si photonics has an immense potential for the development of compact and low-loss opto-electronic oscillators (OEO), with applications in radar and wireless communications. However, current Si OEO have shown a limited performance. Si OEO relying on direct conversion of intensity modulated signals into the microwave domain yield a limited tunability. Wider tunability has been shown by indirect phase-modulation to intensity-modulation conversion. However, the reported tuning range is lower than 4 GHz. Here, we propose a new approach enabling Si OEOs with wide tunability and direct intensity-modulation to microwave conversion. The microwave signal is created by the beating between an optical source and single sideband modulation signal, selected by an add-drop ring resonator working as an optical bandpass filter. The tunability is achieved by changing the wavelength spacing between the optical source and a resonance peak of the resonator. Based on this concept, we experimentally demonstrate microwave signal generation between 6 GHz and 18 GHz, the widest range for a Si-micro-ring-based OEO. Moreover, preliminary results indicate that the proposed Si OEO provides precise refractive index monitoring, with a sensitivity of 94350 GHz/RIU and a potential limit of detection of only 10⁻⁸ RIU, opening a new route for the implementation of high-performance Si photonic sensors.

High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxy

The first waveguide coupled phosphide-based UTC photodiodes grown by Solid Source Molecular Beam Epitaxy (SSMBE) are reported in this paper. Metal Organic Vapour Phase Epitaxy (MOVPE) and Gas Source MBE (GSMBE) have long been the predominant growth techniques for the production of high quality InGaAsP materials. The use of SSMBE overcomes the major issue associated with the unintentional diffusion of zinc in MOVPE and gives the benefit of the superior control provided by MBE growth techniques without the costs and the risks of handling toxic gases of GSMBE. The UTC epitaxial structure contains a 300 nm n-InP collection layer and a 300 nm n⁺⁺-InGaAsP waveguide layer. UTC-PDs integrated with Coplanar Waveguides (CPW) exhibit 3 dB bandwidth greater than 65 GHz and output RF power of 1.1 dBm at 100 GHz. We also demonstrate accurate prediction of the absolute level of power radiated by our antenna integrated UTCs, between 200 GHz and 260 GHz, using 3d full-wave modelling and taking the UTC-to-antenna impedance match into account. Further, we present the first optical 3d full-wave modelling of waveguide UTCs, which provides a detailed insight into the coupling between a lensed optical fibre and the UTC chip.

High-power traveling-wave photodetector based on an aperiodically loaded open-circuit electrode

We demonstrate a four-stage silicon distributed traveling-wave photodetector (TWPD) whose input terminal is open-circuit so as to enhance the radio-frequency (RF) output power. In order to mitigate the bandwidth drop caused by the RF reflection at the open input terminal, photodetector (PD) units are aperiodically loaded on the TW electrode. With the aid of an equivalent circuit model, we optimize spacings between PD units and then improve the 3 dB bandwidth from 7 to 10 GHz. A good agreement between measurement and modeling is obtained. Thanks to the cancellation of the input termination impedance, maximum RF output powers of the device are 10.2 and 6.5 dBm at 5 and 10 GHz, respectively. The corresponding power conversion efficiencies are 7.0% and 3.2%.

Waveguide-Integrated, Plasmonic Enhanced Graphene Photodetectors

We present a micrometer-scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed to directly generate a photovoltage by the photothermoelectric effect. It is made of chemical vapor deposited single layer graphene, and has an external responsivity ∼12.2 V/W with a 3 dB bandwidth ∼42 GHz. We utilize Au split-gates to electrostatically create a p-n-junction and simultaneously guide a surface plasmon polariton gap-mode. This increases the light-graphene interaction and optical absorption and results in an increased electronic temperature and steeper temperature gradient across the GPD channel. This paves the way to compact, on-chip integrated, power-efficient graphene based photodetectors for receivers in tele- and datacom modules.

Broadband 400-2400 nm Ge heterostructure nanowire photodetector fabricated by three-dimensional Ge condensation technique

A 2.7% tensile strained Ge/SiGe heterostructure nanowire (NW) is in-situ fabricated by a three-dimensional Ge condensation method. The NW metal-semiconductor-metal (MSM) photodetector demonstrates an ultra-broadband detection wavelength of 400-2400 nm, showing a high responsivity of >3.46×10² A/W with a photocurrent gain of >4.32×10² at 1550 nm under -2 V. A high normalized photocurrent to dark current ratio (NPDR) of 1.88×10¹¹ W^-1 at 1550 nm under -1 V is achieved. The fully complementary metal-oxide-semiconductor (CMOS) compatible, simple and scalable process suggest that the Ge heterostructure NW is promising for low cost, high performance near-infrared or short wavelength infrared focal plane array applications.

Analysis of Optical Integration between Si3N4 Waveguide and a Ge-Based Optical Modulator Using a Lateral Amorphous GeSi Taper at the Telecommunication Wavelength of 1.55 µm

We report on the theoretical investigation of using an amorphous Ge0.83Si0.17 lateral taper to enable a low-loss small-footprint optical coupling between a Si3N4 waveguide and a low-voltage Ge-based Franz–Keldysh optical modulator on a bulk Si substrate using 3D Finite-Difference Time-Domain (3D-FDTD) simulation at the optical wavelength of 1550 nm. Despite a large refractive index and optical mode size mismatch between Si3N4 and the Ge-based modulator, the coupling structure rendered a good coupling performance within fabrication tolerance of advanced complementary metal-oxide semiconductor (CMOS) processes. For integrated optical modulator performance, the Si3N4-waveguide-integrated Ge-based on Si optical modulators could simultaneously provide workable values of extinction ratio (ER) and insertion loss (IL) for optical interconnect applications with a compact footprint.

Integrated high-power germanium photodetectors assisted by light field manipulation

We experimentally demonstrate integrated high-power germanium photodetectors (Ge PDs) by means of light field manipulation. Compared to the conventional Ge PD, the proposed structures have more uniform light distributions in the absorption region. A maximum photocurrent of 27.1 mA at -3  V bias voltage is experimentally obtained, demonstrating 50% more photocurrent generation under high-power illumination. Bandwidth and modulated signal measurements also verify the improved power handling capability. The proposed high-power Ge PD with compact size and large fabrication tolerance will bring new applications for silicon photonics.

180 Gb/s single carrier single polarization 16-QAM transmission using an O-band silicon photonic IQM

In this paper, we present inphase-quadrature (IQ) modulation in the O-band using dual parallel Mach-Zehnder modulators on the silicon photonics platform. The detailed design of the IQ modulator (IQM) is discussed. We then report the DC and small signal characterization of the device and investigate the performance of the device in a coherent transmission system. A bit rate of 180 Gb/s with 16-QAM modulation is achieved over 20 km of single-mode fiber without any chromatic dispersion compensation. Furthermore, we demonstrate that 77 Gbaud QPSK transmission can be achieved with a low drive voltage of 3 Vpp.

Integrated silicon multifunctional mode-division multiplexing system

Chip-scale optical interconnects have been widely investigated using the wavelength-division multiplexing (WDM) technology, while it has been rarely reported using the mode-division multiplexing (MDM) technology that further improves communication capacity by using multiple spatial mode channels. On the other hand, to achieve large-bandwidth multi-core computing, a flexible and reconfigurable network is highly desired. Here, we proposed and demonstrated a 4 × 4 chip-scale multifunctional MDM system to realize the interconnects among 4 dual-core computing processors. The proposed system integrates fundamental components such as high-speed modulator arrays, multimode switches, and large-bandwidth photodetector arrays, in addition to various multimode devices. The thermal heaters are utilized to achieve multifunctional routing, including inter-mode and inter-path cases. The transmission of 10 Gb/s On-Off Keying (OOK) signal is verified, which demonstrates the reconfigurable inter-core and inter-processor interconnects.

Optical Biosensors Based on Silicon-On-Insulator Ring Resonators: A Review

Recent developments in optical biosensors based on integrated photonic devices are reviewed with a special emphasis on silicon-on-insulator ring resonators. The review is mainly devoted to the following aspects: (1) Principles of sensing mechanism, (2) sensor design, (3) biofunctionalization procedures for specific molecule detection and (4) system integration and measurement set-ups. The inherent challenges of implementing photonics-based biosensors to meet specific requirements of applications in medicine, food analysis, and environmental monitoring are discussed.

Silicon Photonic Biosensors Using Label-Free Detection

Thanks to advanced semiconductor microfabrication technology, chip-scale integration and miniaturization of lab-on-a-chip components, silicon-based optical biosensors have made significant progress for the purpose of point-of-care diagnosis. In this review, we provide an overview of the state-of-the-art in evanescent field biosensing technologies including interferometer, microcavity, photonic crystal, and Bragg grating waveguide-based sensors. Their sensing mechanisms and sensor performances, as well as real biomarkers for label-free detection, are exhibited and compared. We also review the development of chip-level integration for lab-on-a-chip photonic sensing platforms, which consist of the optical sensing device, flow delivery system, optical input and readout equipment. At last, some advanced system-level complementary metal-oxide semiconductor (CMOS) chip packaging examples are presented, indicating the commercialization potential for the low cost, high yield, portable biosensing platform leveraging CMOS processes.

On-chip silicon photonic signaling and processing: a review

The arrival of the big data era has driven the rapid development of high-speed optical signaling and processing, ranging from long-haul optical communication links to short-reach data centers and high-performance computing, and even micro-/nano-scale inter-chip and intra-chip optical interconnects. On-chip photonic signaling is essential for optical data transmission, especially for chip-scale optical interconnects, while on-chip photonic processing is a critical technology for optical data manipulation or processing, especially at the network nodes to facilitate ultracompact data management with low power consumption. In this paper, we review recent research progress in on-chip photonic signaling and processing on silicon photonics platforms. Firstly, basic key devices (lasers, modulators, detectors) are introduced. Secondly, for on-chip photonic signaling, we present recent works on on-chip data transmission of advanced multi-level modulation signals using various silicon photonic integrated devices (microring, slot waveguide, hybrid plasmonic waveguide, subwavelength grating slot waveguide). Thirdly, for on-chip photonic processing, we summarize recent works on on-chip data processing of advanced multi-level modulation signals exploiting linear and nonlinear effects in different kinds of silicon photonic integrated devices (strip waveguide, directional coupler, 2D grating coupler, microring, silicon-organic hybrid slot waveguide). Various photonic processing functions are demonstrated, such as photonic switch, filtering, polarization/wavelength/mode (de)multiplexing, wavelength conversion, signal regeneration, optical logic and computing. Additionally, we also introduce extended silicon+ photonics and show recent works on on-chip graphene-silicon photonic signal processing. The advances in on-chip silicon photonic signaling and processing with favorable performance pave the way to integrate complete optical communication systems on a monolithic chip and integrate silicon photonics and silicon nanoelectronics on a chip. It is believed that silicon photonics will enable more and more emerging advanced applications even beyond silicon photonic signaling and processing.

Multilayer Graphene-GeSn Quantum Well Heterostructure SWIR Light Source

The problem of light source always prevents silicon-based photonics from achieving a final integration. Although some optical pump lasers have been reported in recent years, an electrical pumping laser is considered as the ultimate solution. To fabricate a Si-based laser, there are some crucial obstacles that need to be solved such as difficulties in material epitaxy, light absorption by metal electrodes, and compatibility with the existing complementary metal-oxide-semiconductor transistor process. Here, a multilayer graphene and GeSn/Ge quantum well (QW) heterostructure is designed and fabricated as a Si-based light source. Specially designed Ge_0.9 Sn_0.1 /Ge QWs are used as active layer, which achieves a photoluminescence (PL) peak at 2050 nm. Graphene, which has a high transmittance for all bands of light, lessens the burden of growing thick cladding layer and perfectly breaks the deadlock of light disappearance in metal contacts. The electroluminescence (EL) spectrum of the device is achieved at a peak of 2100 nm under an injection current density of 100 A cm^-2 . Both the PL and EL measurements show the heterostructure has good performance as a short-wave infrared (SWIR) light source. Therefore, the results provides a good alternative for the light source in silicon-based photonics.

Self-equalizing photodiodes, a hybrid electro-optical approach to tackle bandwidth limitation in high-speed signaling

In this paper we provide the design details of self-equalizing photodetectors which enable higher data rate transmission by improving the overall bandwidth of the bandwidth limited transmission link, through a hybrid electro-optical solution. Two different self-equalizing photodiodes, one having fixed equalization and the other being programmable are presented as proof of concept.

Integrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunction

Germanium photodetectors are considered to be mature components in the silicon photonics device library. They are critical for applications in sensing, communications, or optical interconnects. In this work, we report on design, fabrication, and experimental demonstration of an integrated waveguide PIN photodiode architecture that calls upon lateral double Silicon/Germanium/Silicon (Si/Ge/Si) heterojunctions. This photodiode configuration takes advantage of the compatibility with contact process steps of silicon modulators, yielding reduced fabrication complexity for transmitters and offering high-performance optical characteristics, viable for high-speed and efficient operation near 1.55 μm wavelengths. More specifically, we experimentally obtained at a reverse voltage of 1V a dark current lower than 10 nA, a responsivity higher than 1.1 A/W, and a 3 dB opto-electrical cut-off frequency over 50 GHz. The combined benefits of decreased process complexity and high-performance device operation pave the way towards attractive integration strategies to deploy cost-effective photonic transceivers on silicon-on-insulator substrates.

Experimental parametric study of 128 Gb/s PAM-4 transmission system using a multi-electrode silicon photonic Mach Zehnder modulator

We present an experimental study and analysis of a travelling wave series push-pull silicon photonic multi-electrode Mach-Zehnder modulator (ME-MZM) and compare its performance with a single-electrode travelling wave Mach-Zehnder modulator (TWMZM). Utilizing the functionality of the ME-MZM structure plus digital-signal-processing, we report: 1) the C-band transmission of 84 Gb/s OOK modulated data below the KP4 forward error correction threshold with 2 V_pp drive voltage over a distance of 2 km; 2) the transmission of a 128 Gb/s optical 4-level pulse amplitude modulated signal over 1 km of fiber; and 3) the generation of a 168 Gb/s PAM-4 signal using two electrical OOK signals. By comparing the transmission system performance measurements for the ME-MZM with measurements performed using a similar series push-pull TWMZM, we show that the ME-MZM provides a clear advantage in achieving higher baud PAM-4 generation and transmission compared to a TWMZM.

Mode-evolution-based coupler for high saturation power Ge-on-Si photodetectors

We propose a mode-evolution-based coupler for high saturation power germanium-on-silicon photodetectors. This coupler uniformly illuminates the intrinsic germanium region of the detector, decreasing saturation effects, such as carrier screening, observed at high input powers. We demonstrate 70% more photocurrent generation (9.1-15.5 mA) and more than 40 times higher opto-electrical bandwidth (0.7-31 GHz) than conventional butt-coupled detectors under high-power illumination. The high-power and high-speed performance of the device, combined with the compactness of the coupling method, will enable new applications for integrated silicon photonics systems.

Responsivity optimization of a high-speed germanium-on-silicon photodetector

This paper experimentally demonstrates a design optimization of an evanescently-coupled waveguide germanium-on-silicon photodetector (PD) towards high-speed (> 30 Gb/s) applications. The resulting PD provides a responsivity of 1.09 A/W at 1550 nm, a dark current of 3.5 µA and bandwidth of 42.5 GHz at 2 V reverse-bias voltage. To optimize the PD, the impact of various design parameters on performance is investigated. A novel optimization methodology for the PD's responsivity based on the required bandwidth is developed. The responsivity of the PD is enhanced by enlarging its geometry and using off-centered contacts on top of the germanium, while an integrated peaking inductor mitigates the inherent bandwidth reduction from the responsivity optimization. The performance of the optimized PD and the conventional, smaller size non-optimized PD is compared to validate the optimization methodology. The sensitivity of the optimized PD improves by 3.2 dB over a smaller size non-optimized PD. The paper further discusses the impact of top metal contacts on the photodetector's performance.

Design of plasmonic photodetector with high absorptance and nano-scale active regions

We propose a novel plasmonic photodetector with high responsivity, utilizing nano-scale active regions. This design can be applied to diverse materials (group III-V or IV materials) and different operation wavelengths covering the O-U bands. The periodic structure utilizing Surface Plasmon Polariton Bloch Waves (SPP-BWs) has low optical power loss. FDTD simulation shows an absorptance of 74.4% which means a responsivity of about 0.74 A/W at 1550 nm. The low capacitance brings low noise, reduced power consumption, and a high electrical bandwidth which is estimated to be 140 GHz. Among the plasmonic PDs with inherent high speeds but low responsivities, our design makes the obvious progress on improving the absorptance.

High speed and high power polarization insensitive germanium photodetector with lumped structure

We propose and demonstrate a high speed and high power polarization insensitive germanium photodetector (Ge PD) with lumped structure based on related parallel Ge absorption regions. Two absorption regions are double sides illuminated to optimize the space charge density and the two dimensional (2D) grating coupler is adopted for both coupling and polarization independent operation. Being different from previous reported high power scheme with separate absorption areas, the proposed structure is specifically designed with doubled but related Ge absorption regions, forming the equivalent parallel resistor and thus the parasitic parameter can be engineered to ensure a simultaneous large bandwidth. The bandwidth is measured to be >35 GHz, while the maximum current density is measured to be 1.152 mA/μm³. The dark current and the responsivity of the proposed Ge PD are measured to be 1.82 μΑ and 1.06 A/W. Modulated signals experimentally validate the high speed operation and doubled power handling capacity for the proposed scheme. Furthermore, the bit error rate results show the superior performance for the proposed Ge PD at high photocurrent.