Monolithically integrated low linewidth comb source using gain switched slotted Fabry-Perot lasers

Fully tunable Fabry-Pérot cavity based on MEMS Sagnac loop reflector with ultra-low static power consumption

The Fabry-Pérot interferometer, a fundamental component in optoelectronic systems, offers interesting applications such as sensors, lasers, and filters. In this work, we show a tunable Fabry-Pérot cavity consisting of tunable Sagnac loop reflectors (SLRs) and phase shifters based on electrostatic microelectromechanical (MEMS) actuator. The fabrication process of the device is compatible with the standard wafer-level silicon photonics fabrication processes. This electrostatic actuation mechanism provides well-balanced, scalable pathways for efficient tuning methodologies. The extinction ratio of the continuously tunable SLRs' reflectivity is larger than 20 dB. Full 2π phase shifting is achieved, and response times of all the components are less than 25 μs. Both actuators have extremely low static power, measuring under 20 fW and the energy needed for tuning is both below 20 pJ.

On-chip gain switched frequency comb generation using a two sectioned single cavity laser without additional optical injection

A tunable comb source is demonstrated on a monolithically integrated photonic integrated circuit (PIC). The PIC is a two section device designed to produce a single mode tunable spectrum, and the comb is generated by gain switching one section of the two sectioned laser. The laser produces a single mode spectra with a tunable range of 1543 - 1565 nm, and combs were generated with a frequency range of 1 - 10 GHz without requiring additional optical injection to maintain the phase coherence.

Tunable, coherent optical comb source via on-chip bidirectional coupling

A tunable comb source is demonstrated through gain switching on a three-sectioned photonic integrated circuit (PIC). The PIC consists of two mutually coupled lasers connected by a passive waveguide. One of these is a tunable, two-section, single mode laser. The second laser is a simple Fabry-Perot cavity laser which can be phase-locked with the single mode laser via bidirectional coupling. Frequency combs are produced by gain switching the Fabry-Perot laser by applying a high-power radio frequency signal. Combs are generated with line spacings ranging from 3.5 to 8 GHz. The on-chip bidirectional coupling causes the comb to also be generated in the two-section device. Despite the lack of on-chip optical isolation between the lasers, the resulting combs are stable. Numerical simulations using a delay-differential model reproduce the results and reveal the important role played by the short delay times inherent to on-chip integration in this stability.

InAs/InP quantum dot mode-locked laser with an aggregate 12.544 Tbit/s transmission capacity

Chip-scale optical frequency comb sources are ideal compact solutions to generate high speed optical pulses for applications in wavelength division multiplexing (WDM) and high-speed optical signal processing. Our previous studies have concentrated on the use of quantum dash based lasers, but here we present results from an InAs/InP quantum dot (QDot) C-band passively mode-locked laser (MLL) for frequency comb generation. By using this single-section QDot-MLL we demonstrate an aggregate line rate of 12.544 Tbit/s 16QAM data transmission capacity for both back-to-back (B2B) and over 100-km of standard single mode fiber (SSMF). This finding highlights the viability for InAs/InP QDot lasers to be used as a low-cost optical source for large-scale networks.

Study on the proximity of QWI in InP-based AlGaInAs MQWs using the IFVD method and its application in single frequency teardrop laser diodes

This paper presents our research on quantum well intermixing (QWI) of InP-based AlGaInAs/AlGaInAs multi-quantum wells using impurity-free vacancy-disordering (IFVD) and the QWI mask proximity effect and its application in the design and fabrication of a teardrop laser. Using a Si₃N₄ film deposited by plasma-enhanced chemical vapor deposition (PECVD) as a QWI promoter mask and annealing under 700°C for 2 minutes, a 70 nm wavelength blue shift of a FP laser is achieved using InP-based AlGaInAs quantum well laser material. It is found that a 5 µm separation is needed between the QWI mask edges and the non-QWI area during the QWI process. Based on the QWI technique and proximity effect, the designed and fabricated teardrop laser demonstrated continuous wave (CW) lasing above 40 mA and single frequency operation with a side mode suppression ratio of 32.6 dB at 77.3 mA.

Integrated dual optical frequency comb source

A monolithically integrated dual-channel optical frequency comb source is demonstrated in this paper. Three lasers are integrated on a single chip using a regrowth-free fabrication process in a master-slave-slave configuration. The master laser's power is split equally using a 1x2 multimode interference coupler and injection locks the two slave lasers. The slave lasers are gain-switched to produce dual optical frequency combs at 4.1 GHz and 5 GHz. To the best of our knowledge, this is the first demonstration of a dual optical frequency comb source with all light sources monolithically integrated in a photonic integrated circuit (PIC).

Off-Axis Cavity-Enhanced Absorption Spectroscopy of 14NH3 in Air Using a Gain-Switched Frequency Comb at 1.514 μm

A custom-designed gain-switched frequency comb (GSFC) source was passively coupled to a medium finesse (F ≈ 522) cavity in off-axis configuration for the detection of ammonia (14NH3) in static dry air. The absorption of ammonia was detected in the near infrared spectral region between 6604 and 6607 cm-1 using a Fourier transform detection scheme. More than 30 lines of the GSFC output (free spectral range 2.5 GHz) overlapped with the strongest ro-vibrational ammonia absorption features in that spectral region. With the cavity in off-axis configuration, an NH3 detection limit of ∼3.7 ppmv in 20 s was accomplished in a laboratory environment. The experimental performance of the prototype spectrometer was characterized; advantages, drawbacks and the potential for future applications are discussed.

A Comparison between off and On-Chip Injection Locking in a Photonic Integrated Circuit

The mutual and injection locking characteristics of two integrated lasers are compared, both on and off-chip. In this study, two integrated single facet slotted Fabry–Pérot lasers are utilised to develop the measurement technique used to examine the different operational regimes arising from optically locking a semiconductor diode laser. The technique employed used an optical spectrum analyser (OSA), an electrical spectrum analyser (ESA) and a high speed oscilloscope (HSO). The wavelengths of the lasers are measured on the OSA and the selected optical mode for locking is identified. The region of injection locking and various other regions of dynamical behaviour between the lasers are observed on the ESA. The time trace information of the system is obtained from the HSO and performing the FFT (Fast Fourier Transform) of the time traces returns the power spectra. Using these tools, the similarities and differences between off-chip injection locking with an isolator, and on-chip mutual locking are examined.

Mode Suppression in Injection Locked Multi-Mode and Single-Mode Lasers for Optical Demultiplexing

Optical injection locking has been demonstrated as an effective filter for optical communications. These optical filters have advantages over conventional passive filters, as they can be used on active material, allowing them to be monolithically integrated onto an optical circuit. We present an experimental and theoretical study of the optical suppression in injection locked Fabry–Pérot and slotted Fabry–Pérot lasers. We consider both single frequency and optical comb injection. Our model is then used to demonstrate that improving the Q factor of devices increases the suppression obtained when injecting optical combs. We show that increasing the Q factor while fixing the device pump rate relative to threshold causes the locking range of these demultiplexers to asymptotically approach a constant value.

Regrowth-free integration of injection locked slotted laser with an electroabsorption modulator

Optical injection locking was used to red shift an integrated semiconductor laser up to 30 nm away from the main free running lasing mode. This injection locking of the laser beyond its band edge enabled its integration with an electroabsorption modulator to produce a 2.5 Gb/s eye diagram. The electroabsorption modulator was shown to have a 3 dB bandwidth of 5.5 GHz, which was limited by the contact capacitance. This paper demonstrates that such devices could be applied in a regrowth free, monolithic coherent wavelength division multiplexing transmitter.

InP photonic integrated externally injected gain switched optical frequency comb

We report on an InP photonic integrated circuit for the generation of an externally injected gain switched optical frequency comb. The device is fully characterized and generates a comb with frequency spacing ranging from 6 to 10 GHz, good noise properties that include relative intensity noise of <-130  dB/Hz and linewidth of 1.5 MHz, and a high phase correlation between comb lines. These characteristics, in conjunction with the compactness and cost efficiency of the integrated device, demonstrate the quality of the resultant comb source for numerous applications.

Gain-switching injection-locked dual optical frequency combs: characterization and optimization

In this work, the generation of dual optical frequency combs based on gain-switching and optical injection locking is experimentally examined. The study reveals that an effective process of optical injection can lead to optimized RF combs in terms of span and signal-to-noise ratio. The system also minimizes the overlap of lines and reduces the number of optical components involved, eliminating the need for any external modulator (electro-optic, acousto-optic). The validation of the system was performed as a dual-comb spectrometer, which allowed for determination of the absorption and dispersion profiles of the molecular transition of H¹³CN at 1538.523 nm.