1
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Guo H, Jia C, Yao Y, Bai M, Ma T, Zhang J, Xia J, Nie H, Yao B, He J, Zhang B. Nonlinear Optical Saturable Absorption Properties of 2D VP Nanosheets and Application as SA in a Passively Q-Switched Nd:YVO 4 Laser. MATERIALS (BASEL, SWITZERLAND) 2024; 17:2585. [PMID: 38893849 PMCID: PMC11174069 DOI: 10.3390/ma17112585] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2024] [Revised: 05/21/2024] [Accepted: 05/25/2024] [Indexed: 06/21/2024]
Abstract
Two-dimensional (2D) violet phosphorus (VP) plays a significant role in the applications of photonic and optoelectronic devices due to its unique optical and electrical properties. The ultrafast carrier dynamics and nonlinear optical absorption properties were systematically investigated here. The intra- and inter-band ultrafast relaxation times of 2D VP nanosheets were measured to be ~6.83 ps and ~62.91 ps using the pump-probe method with a probe laser operating at 1.03 μm. The nonlinear absorption coefficient βeff, the saturation intensity Is, the modulation depth ΔR, and the nonsaturable loss were determined to be -2.18 × 104 cm/MW, 329 kW/cm2, 6.3%, and 9.8%, respectively, by using the Z-scan and I-scan methods, indicating the tremendous saturable absorption property of 2D VP nanosheets. Furthermore, the passively Q-switched Nd:YVO4 laser was realized with the 2D VP nanosheet-based SA, in which the average output power of 700 mW and the pulse duration of 478 ns were obtained. These results effectively reveal the nonlinear optical absorption characteristics of VP nanosheets, demonstrating their outstanding light-manipulating capabilities and providing a basis for the applications of ultrafast optical devices. Our results verify the excellent saturable absorption properties of 2D VP, paving the way for its applications in pulsed laser generation.
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Affiliation(s)
- Haowen Guo
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
| | - Chunyan Jia
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
| | - Yongping Yao
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
| | - Meng Bai
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
| | - Tiejun Ma
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
| | - Jiayu Zhang
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
| | - Jinbao Xia
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
| | - Hongkun Nie
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
| | - Bo Yao
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
| | - Jingliang He
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
- Key Laboratory of Laser & Infrared System, Ministry of Education, Shandong University, Qingdao 266237, China
| | - Baitao Zhang
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
- Key Laboratory of Laser & Infrared System, Ministry of Education, Shandong University, Qingdao 266237, China
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2
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Zhang Y, Zhou T, Zhong F, Jiang G, Wang S, Yuan X, Zhang Q, Lu J, Ni Z, Wan D. Interfacial Effect on the Transient Dielectric Function and Charge Transfer in a Monolayer WS 2/Si Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59981-59988. [PMID: 38100424 DOI: 10.1021/acsami.3c16009] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/17/2023]
Abstract
Monolayer tungsten disulfide (WS2) is a highly promising material for silicon photonics. Thus, the WS2/Si interface plays a very important role due to the interfacial complex effects and abundant states. Among them, the effect of charge transfer on exciton dynamics and the optoelectronic property is determined by the dielectric function, which is very crucial for the performance of optoelectronic devices. However, research on the exciton dynamics or the transient dielectric function of WS2 in such WS2/Si junctions is still rare. In this work, both the transient dielectric function and charge transfer of WS2/Si heterojunctions are analyzed based on the transient reflectance spectra measured by the pump-probe spectrometer. The dynamic processes of the A exciton, affected by charge transfer within the WS2/Si heterojunction, are interpreted. Moreover, the transient dielectric function of WS2 is quantitatively analyzed. The dielectric function of WS2 exhibits a notable 19% change, persisting for more than 180 ps within the WS2/Si heterojunction. These findings can pave the way for the advancement of silicon photonic devices based on WS2.
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Affiliation(s)
- Yuwei Zhang
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Tao Zhou
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Fan Zhong
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Guangsheng Jiang
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Shixuan Wang
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Xueyong Yuan
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Qi Zhang
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Junpeng Lu
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Zhenhua Ni
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
- Purple Mountain Laboratories, Nanjing 211111, China
| | - Dongyang Wan
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
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3
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Upadhyay B, Sharma R, Maity D, Narayan TN, Pal SK. Ultrafast carrier dynamics in vanadium-doped MoS 2 alloys. NANOSCALE 2023; 15:16344-16353. [PMID: 37786388 DOI: 10.1039/d3nr03337f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/04/2023]
Abstract
Substitutional doping is a most promising approach to manipulate the electronic and optical properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs). In addition to inducing magnetism, vanadium (V) doping can lead to semiconductor-metal transition in TMDCs. However, the dynamics of charge carriers that governs the optoelectronic properties of doped TMDCs has been rarely revealed. In this work, we have investigated the dynamics of photocarriers in pristine and V-doped monolayer (ML) MoS2. Comparison of the transient absorption (TA) spectra of ML MoS2 with lightly (≤1%) and heavily (3.62%) V-doped MoS2 infers the induction of additional energy states in the doped materials giving rise to new low energy bleach features in the TA spectra. The quasiparticle band structure of MoS2 is found to disappear at sufficiently high V doping due to the presence of impurity bands. An attempt has also been made to study the manipulation of the carrier lifetime with V doping in MoS2. Our TA kinetic measurements suggest that the decay kinetics of the carriers becomes slower with increasing doping percentage and at a higher doping level the carriers survive for a much longer time compared to pristine MoS2. Furthermore, we have identified a new electronic transition (NET) in heavily V-doped MoS2 at high pump fluences.
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Affiliation(s)
- Bhuvan Upadhyay
- School of Physical Sciences, Indian Institute of Technology Mandi, Kamand, Mandi, Himachal Pradesh, 175075, India.
- Advanced Materials Research Center, Indian Institute of Technology Mandi, Kamand, Mandi, Himachal Pradesh, 175075, India
| | - Rahul Sharma
- Tata Institute of Fundamental Research-Hyderabad, Sy. No. 36/P, Gopanapally Village, Serilingampally Mandal, Hyderabad-500046, India
- Department of Physics and Astronomy, Uppsala University, 75236, Uppsala, Sweden
| | - Dipak Maity
- Tata Institute of Fundamental Research-Hyderabad, Sy. No. 36/P, Gopanapally Village, Serilingampally Mandal, Hyderabad-500046, India
| | - Tharangattu N Narayan
- Tata Institute of Fundamental Research-Hyderabad, Sy. No. 36/P, Gopanapally Village, Serilingampally Mandal, Hyderabad-500046, India
| | - Suman Kalyan Pal
- School of Physical Sciences, Indian Institute of Technology Mandi, Kamand, Mandi, Himachal Pradesh, 175075, India.
- Advanced Materials Research Center, Indian Institute of Technology Mandi, Kamand, Mandi, Himachal Pradesh, 175075, India
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Li Z, Rashvand F, Bretscher H, Szydłowska BM, Xiao J, Backes C, Rao A. Understanding the Photoluminescence Quenching of Liquid Exfoliated WS 2 Monolayers. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2022; 126:21681-21688. [PMID: 36605783 PMCID: PMC9806825 DOI: 10.1021/acs.jpcc.2c05284] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/26/2022] [Revised: 11/24/2022] [Indexed: 06/17/2023]
Abstract
Monolayer transition metal dichalcogenides (TMDs) are being investigated as active materials in optoelectronic devices due to their strong excitonic effects. While mechanical exfoliation (ME) of monolayer TMDs is limited to small areas, these materials can also be exfoliated from their parent layered materials via high-volume liquid phase exfoliation (LPE). However, it is currently considered that LPE-synthesized materials show poor optoelectronic performance compared to ME materials, such as poor photoluminescence quantum efficiencies (PLQEs). Here we evaluate the photophysical properties of monolayer-enriched LPE WS2 dispersions via steady-state and time-resolved optical spectroscopy and benchmark these materials against untreated and chemically treated ME WS2 monolayers. We show that the LPE materials show features of high-quality semiconducting materials such as very small Stokes shift, smaller photoluminescence line widths, and longer exciton lifetimes than ME WS2. We reveal that the energy transfer between the direct-gap monolayers and in-direct gap few-layers in LPE WS2 dispersions is a major reason for their quenched PL. Our results suggest that LPE TMDs are not inherently highly defective and could have a high potential for optoelectronic device applications if improved strategies to purify the LPE materials and reduce aggregation could be implemented.
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Affiliation(s)
- Zhaojun Li
- Cavendish
Laboratory, University of Cambridge, JJ Thomson Avenue, CB3 0HE Cambridge, United Kingdom
- Molecular
and Condensed Matter Physics, Department of Physics and Astronomy, Uppsala University, 75120 Uppsala, Sweden
| | - Farnia Rashvand
- Institute
for Physical Chemistry, Ruprecht-Karls-Universität
Heidelberg, Im Neuenheimer
Feld 253, 69120 Heidelberg, Germany
| | - Hope Bretscher
- Cavendish
Laboratory, University of Cambridge, JJ Thomson Avenue, CB3 0HE Cambridge, United Kingdom
| | - Beata M. Szydłowska
- Institute
for Physical Chemistry, Ruprecht-Karls-Universität
Heidelberg, Im Neuenheimer
Feld 253, 69120 Heidelberg, Germany
| | - James Xiao
- Cavendish
Laboratory, University of Cambridge, JJ Thomson Avenue, CB3 0HE Cambridge, United Kingdom
| | - Claudia Backes
- Institute
for Physical Chemistry, Ruprecht-Karls-Universität
Heidelberg, Im Neuenheimer
Feld 253, 69120 Heidelberg, Germany
| | - Akshay Rao
- Cavendish
Laboratory, University of Cambridge, JJ Thomson Avenue, CB3 0HE Cambridge, United Kingdom
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5
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Li ZH, He JX, Lv XH, Chi LF, Egbo KO, Li MD, Tanaka T, Guo QX, Yu KM, Liu CP. Optoelectronic properties and ultrafast carrier dynamics of copper iodide thin films. Nat Commun 2022; 13:6346. [PMID: 36289237 PMCID: PMC9606309 DOI: 10.1038/s41467-022-34117-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/28/2022] [Accepted: 10/13/2022] [Indexed: 11/09/2022] Open
Abstract
As a promising high mobility p-type wide bandgap semiconductor, copper iodide has received increasing attention in recent years. However, the defect physics/evolution are still controversial, and particularly the ultrafast carrier and exciton dynamics in copper iodide has rarely been investigated. Here, we study these fundamental properties for copper iodide thin films by a synergistic approach employing a combination of analytical techniques. Steady-state photoluminescence spectra reveal that the emission at ~420 nm arises from the recombination of electrons with neutral copper vacancies. The photogenerated carrier density dependent ultrafast physical processes are elucidated with using the femtosecond transient absorption spectroscopy. Both the effects of hot-phonon bottleneck and the Auger heating significantly slow down the cooling rate of hot-carriers in the case of high excitation density. The effect of defects on the carrier recombination and the two-photon induced ultrafast carrier dynamics are also investigated. These findings are crucial to the optoelectronic applications of copper iodide.
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Affiliation(s)
- Zhan Hua Li
- grid.263451.70000 0000 9927 110XDepartment of Physics, College of Science, Shantou University, 515063 Shantou, Guangdong China ,grid.263451.70000 0000 9927 110XCenter of Semiconductor Materials and Devices, Shantou University, 515063 Shantou, Guangdong China
| | - Jia Xing He
- grid.263451.70000 0000 9927 110XDepartment of Chemistry, Shantou University, 515063 Shantou, Guangdong China
| | - Xiao Hu Lv
- grid.263451.70000 0000 9927 110XDepartment of Physics, College of Science, Shantou University, 515063 Shantou, Guangdong China ,grid.263451.70000 0000 9927 110XCenter of Semiconductor Materials and Devices, Shantou University, 515063 Shantou, Guangdong China
| | - Ling Fei Chi
- grid.263451.70000 0000 9927 110XDepartment of Physics, College of Science, Shantou University, 515063 Shantou, Guangdong China
| | - Kingsley O. Egbo
- grid.35030.350000 0004 1792 6846Department of Physics, City University of Hong Kong, 83 Tat Chee Ave., Kowloon, Hong Kong ,grid.5336.30000 0004 0497 2560Paul-Drude-Institut fur Festkorperelektronik, Liebniz-Institut im Forschungsverbund Berlin e. V, Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Ming-De Li
- grid.263451.70000 0000 9927 110XDepartment of Chemistry, Shantou University, 515063 Shantou, Guangdong China
| | - Tooru Tanaka
- grid.412339.e0000 0001 1172 4459Synchrotron Light Application Center, Saga University, Saga, 840-8502 Japan
| | - Qi Xin Guo
- grid.412339.e0000 0001 1172 4459Synchrotron Light Application Center, Saga University, Saga, 840-8502 Japan
| | - Kin Man Yu
- grid.35030.350000 0004 1792 6846Department of Physics, City University of Hong Kong, 83 Tat Chee Ave., Kowloon, Hong Kong
| | - Chao Ping Liu
- grid.263451.70000 0000 9927 110XDepartment of Physics, College of Science, Shantou University, 515063 Shantou, Guangdong China ,grid.263451.70000 0000 9927 110XCenter of Semiconductor Materials and Devices, Shantou University, 515063 Shantou, Guangdong China
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6
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Zhao Z, You J, Zhang J, Tang Y. Data-Enhanced Deep Greedy Optimization Algorithm for the On-Demand Inverse Design of TMDC-Cavity Heterojunctions. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2976. [PMID: 36080013 PMCID: PMC9457757 DOI: 10.3390/nano12172976] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/07/2022] [Revised: 08/21/2022] [Accepted: 08/24/2022] [Indexed: 06/15/2023]
Abstract
A data-enhanced deep greedy optimization (DEDGO) algorithm is proposed to achieve the efficient and on-demand inverse design of multiple transition metal dichalcogenides (TMDC)-photonic cavity-integrated heterojunctions operating in the strong coupling regime. Precisely, five types of photonic cavities with different geometrical parameters are employed to alter the optical properties of monolayer TMDC, aiming at discovering new and intriguing physics associated with the strong coupling effect. Notably, the traditional rigorous coupled wave analysis (RCWA) approach is utilized to generate a relatively small training dataset for the DEDGO algorithm. Importantly, one remarkable feature of DEDGO is the integration the decision theory of reinforcement learning, which remedies the deficiencies of previous research that focused more on modeling over decision making, increasing the success rate of inverse prediction. Specifically, an iterative optimization strategy, namely, deep greedy optimization, is implemented to improve the performance. In addition, a data enhancement method is also employed in DEDGO to address the dependence on a large amount of training data. The accuracy and effectiveness of the DEDGO algorithm are confirmed to be much higher than those of the random forest algorithm and deep neural network, making possible the replacement of the time-consuming conventional scanning optimization method with the DEDGO algorithm. This research thoroughly describes the universality, interpretability, and excellent performance of the DEDGO algorithm in exploring the underlying physics of TMDC-cavity heterojunctions, laying the foundations for the on-demand inverse design of low-dimensional material-based nano-devices.
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Affiliation(s)
- Zeyu Zhao
- State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, China
| | - Jie You
- Defense Innovation Institute, Academy of Military Sciences PLA China, Beijing 100071, China
| | - Jun Zhang
- State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, China
| | - Yuhua Tang
- State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, China
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7
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Zhu L, Song Z, Li R, Zhu H. Hot carrier dynamics in MoS 2/WS 2heterostructure. NANOTECHNOLOGY 2022; 33:195701. [PMID: 35073521 DOI: 10.1088/1361-6528/ac4e41] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2021] [Accepted: 01/24/2022] [Indexed: 06/14/2023]
Abstract
TMDs based heterostructure have drawn much attention for its potential application in photoelectric devices benefiting from the rapid and effective carrier separation and ultra-long interlayer exciton lifetime. Recent studies on carrier dynamics of TMDs based heterostructures are mainly focused on the transfer process of photo-generated carriers across the interface and lifetime of interlayer exciton but little attention is paid on the dynamics of hot carriers. Here, the carrier dynamics of hot carriers in MoS2/WS2heterostructure is investigated by transient absorption spectra. Rapid separation of electron and hole is observed. More importantly, hot carriers of C exciton, which contribute to the absorption of most of the visible light, could compensate for the carrier loss in the band edge exciton energy band through the intervalley transfer process. This re-injection process of hot carriers of C exciton could compensate for carrier depletion in photoelectric devices, thus may greatly improve the light utilization in optoelectronic devices.
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Affiliation(s)
- Lang Zhu
- New Materials and New Energies, Shen Zhen Technology University, Shenzhen, 518118, People's Republic of China
| | - Zongpeng Song
- New Materials and New Energies, Shen Zhen Technology University, Shenzhen, 518118, People's Republic of China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Ran Li
- New Materials and New Energies, Shen Zhen Technology University, Shenzhen, 518118, People's Republic of China
| | - Haiou Zhu
- New Materials and New Energies, Shen Zhen Technology University, Shenzhen, 518118, People's Republic of China
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8
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Sebait R, Biswas C, Song B, Seo C, Lee YH. Identifying Defect-Induced Trion in Monolayer WS 2 via Carrier Screening Engineering. ACS NANO 2021; 15:2849-2857. [PMID: 33470093 DOI: 10.1021/acsnano.0c08828] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Unusually high exciton binding energies (BEs), as much as ∼1 eV in monolayer transition-metal dichalcogenides, provide opportunities for exploring exotic and stable excitonic many-body effects. These include many-body neutral excitons, trions, biexcitons, and defect-induced excitons at room temperature, rarely realized in bulk materials. Nevertheless, the defect-induced trions correlated with charge screening have never been observed, and the corresponding BEs remain unknown. Here we report defect-induced A-trions and B-trions in monolayer tungsten disulfide (WS2) via carrier screening engineering with photogenerated carrier modulation, external doping, and substrate scattering. Defect-induced trions strongly couple with inherent SiO2 hole traps under high photocarrier densities and become more prominent in rhenium-doped WS2. The absence of defect-induced trion peaks was confirmed using a trap-free hexagonal boron nitride substrate, regardless of power density. Moreover, many-body excitonic charge states and their BEs were compared via carrier screening engineering at room temperature. The highest BE was observed in the defect-induced A-trion state (∼214 meV), comparably higher than the trion (209 meV) and neutral exciton (174 meV), and further tuned by external photoinduced carrier density control. This investigation allows us to demonstrate defect-induced trion BE localization via spatial BE mapping in the monolayer WS2 midflake regions distinctive from the flake edges.
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9
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Tsai HS, Huang YH, Tsai PC, Chen YJ, Ahn H, Lin SY, Lu YJ. Ultrafast Exciton Dynamics in Scalable Monolayer MoS 2 Synthesized by Metal Sulfurization. ACS OMEGA 2020; 5:10725-10730. [PMID: 32455191 PMCID: PMC7240830 DOI: 10.1021/acsomega.0c00187] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2020] [Accepted: 04/07/2020] [Indexed: 05/08/2023]
Abstract
Excitons in monolayer transition metal dichalcogenides (TMDs) have exceptionally large binding energies and dominate the optical properties of materials. Exploring the relaxation behavior of excitons is crucial for understanding the fundamental physics as well as the performance of TMD-based optoelectronic devices. However, ultrafast carrier dynamics is sensitive to the structural defects and surface conditions of TMDs, depending on the growth or transfer process. Here, we utilized pump-probe transient absorption (TA) spectroscopy with a white-light probe to investigate the dynamics of excitons in monolayer MoS2 synthesized by the metal sulfurization method. The sulfurization method was used for the fabrication of large-scale, continuous, and uniform thin films with a controllable number of layers. The excitation dynamics of the wafer-size monolayer MoS2 is found to be comparable to that of monolayer MoS2 flakes grown by chemical vapor deposition (CVD). The dominant processes of carrier relaxation in the monolayer MoS2 are exciton-exciton annihilation (hundreds of femtoseconds), the trapping of the excitons by surface states (a few picoseconds), and interband carrier-phonon scattering (tens of picoseconds). Moreover, the induced absorption due to mid-gap defects, which is often observed for samples fabricated by growth methods, such as CVD, is not observed for our continuous and uniform monolayer films. Understanding the charge carrier dynamics of the exciton in the scalable and uniform monolayer MoS2 can provide physical insights that are valuable in the design and development of complex 2D devices.
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Affiliation(s)
- Hsu-Sheng Tsai
- Research
Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Space
Environment Simulation Research Infrastructure, Harbin Institute of Technology, 150001, Harbin, China
| | - Yung-Hung Huang
- Research
Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Department
of Materials Science and Engineering, National
Dong Hwa University, Hualien 97401, Taiwan
| | - Po-Cheng Tsai
- Research
Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Yi-Jia Chen
- Department
of Materials Science and Engineering, National
Dong Hwa University, Hualien 97401, Taiwan
| | - Hyeyoung Ahn
- Department
of Photonics, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30013, Taiwan
| | - Shih-Yen Lin
- Research
Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Graduate
Institute of Electronics Engineering, National
Taiwan University, Taipei 10617, Taiwan
| | - Yu-Jung Lu
- Research
Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Department
of Physics, National Taiwan University, Taipei 10617, Taiwan
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10
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Yang H, Chen W, Zheng X, Yang D, Hu Y, Zhang X, Ye X, Zhang Y, Jiang T, Peng G, Zhang X, Zhang R, Deng C, Qin S. Near-Infrared Photoelectric Properties of Multilayer Bi 2O 2Se Nanofilms. NANOSCALE RESEARCH LETTERS 2019; 14:371. [PMID: 31820137 PMCID: PMC6901633 DOI: 10.1186/s11671-019-3179-4] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/12/2019] [Accepted: 10/09/2019] [Indexed: 06/10/2023]
Abstract
The near-infrared (NIR) photoelectric properties of multilayer Bi2O2Se nanofilms were systematically studied in this paper. Multilayer Bi2O2Se nanofilms demonstrate a sensitive photo response to NIR, including a high photoresponsivity (~ 101 A/W), a quick response time (~ 30 ms), a high external quantum efficiency (~ 20,300%), and a high detection rate (1.9 × 1010 Jones). These results show that the device based on multilayer Bi2O2Se nanofilms might have great potentials for future applications in ultrafast, highly sensitive NIR optoelectronic devices.
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Affiliation(s)
- Hang Yang
- College of Arts and Science, National University of Defense Technology, Changsha, 410073, China
| | - Wei Chen
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
| | - Xiaoming Zheng
- College of Arts and Science, National University of Defense Technology, Changsha, 410073, China
| | - Dongsheng Yang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
| | - Yuze Hu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
| | - Xiangzhe Zhang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
| | - Xin Ye
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Yi Zhang
- College of Arts and Science, National University of Defense Technology, Changsha, 410073, China
| | - Tian Jiang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
| | - Gang Peng
- College of Arts and Science, National University of Defense Technology, Changsha, 410073, China
| | - Xueao Zhang
- College of Physical Science and Technology, Xiamen University, Xiamen, 361005, China.
| | - Renyan Zhang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China.
| | - Chuyun Deng
- College of Arts and Science, National University of Defense Technology, Changsha, 410073, China.
| | - Shiqiao Qin
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
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11
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Zhou P, Tanghe I, Schiettecatte P, van Thourhout D, Hens Z, Geiregat P. Ultrafast carrier dynamics in colloidal WS2 nanosheets obtained through a hot injection synthesis. J Chem Phys 2019; 151:164701. [DOI: 10.1063/1.5124898] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022] Open
Affiliation(s)
- Pengshang Zhou
- Physics and Chemistry of Nanostructures Group, Department of Chemistry, Ghent University, Krijgslaan 281-S3, 9000 Ghent, Belgium
| | - Ivo Tanghe
- Physics and Chemistry of Nanostructures Group, Department of Chemistry, Ghent University, Krijgslaan 281-S3, 9000 Ghent, Belgium
- Photonics Research Group, Department of Information Technology, Ghent University, Technologiepark-Zwijnaarde 126, 9052 Ghent, Belgium
| | - Pieter Schiettecatte
- Physics and Chemistry of Nanostructures Group, Department of Chemistry, Ghent University, Krijgslaan 281-S3, 9000 Ghent, Belgium
| | - Dries van Thourhout
- Photonics Research Group, Department of Information Technology, Ghent University, Technologiepark-Zwijnaarde 126, 9052 Ghent, Belgium
| | - Zeger Hens
- Physics and Chemistry of Nanostructures Group, Department of Chemistry, Ghent University, Krijgslaan 281-S3, 9000 Ghent, Belgium
| | - Pieter Geiregat
- Physics and Chemistry of Nanostructures Group, Department of Chemistry, Ghent University, Krijgslaan 281-S3, 9000 Ghent, Belgium
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Han S, Boguschewski C, Gao Y, Xiao L, Zhu J, van Loosdrecht PHM. Incoherent phonon population and exciton-exciton annihilation dynamics in monolayer WS 2 revealed by time-resolved Resonance Raman scattering. OPTICS EXPRESS 2019; 27:29949-29961. [PMID: 31684250 DOI: 10.1364/oe.27.029949] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2019] [Accepted: 08/18/2019] [Indexed: 06/10/2023]
Abstract
Atomically thin layer transition metal dichalcogenides have been intensively investigated for their rich optical properties and potential applications on nano-electronics. In this work, we study the incoherent phonon and exciton population dynamics in monolayer WS2 by time-resolved Resonance Raman scattering spectroscopy. Upon excitation of the exciton transition, both Stokes and anti-Stokes scattering strength of the optical and the longitudinal acoustic two phonon modes exhibit large reduction. Based on the assumption of quasi-equilibrium distribution, the hidden phonon population dynamics is retrieved, which shows an instant build-up and a relaxation lifetime of ∼4 ps at the exciton density ∼1012cm-2. A phonon temperature rises of ∼20 K was identified due to the exciton excitation and relaxation. The exciton relaxation dynamics extracted from the transient vibrational Raman response shows strong excitation density dependence, signaling an important bi-molecular contribution to the decay. These results provide significant knowledge on the thermal dynamics after optical excitation, enhance the understanding of the fundamental exciton dynamics in two-dimensional transition metal materials, and demonstrate that time-resolved Resonance Raman scattering spectroscopy is a powerful method for exploring quasi-particle dynamics in optical materials.
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Pu J, Matsuki K, Chu L, Kobayashi Y, Sasaki S, Miyata Y, Eda G, Takenobu T. Exciton Polarization and Renormalization Effect for Optical Modulation in Monolayer Semiconductors. ACS NANO 2019; 13:9218-9226. [PMID: 31394038 DOI: 10.1021/acsnano.9b03563] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The ideal quantum confinement structure of monolayer semiconductors offers prominent optical modulation capabilities that are mediated by enhanced many-body interactions. Herein, we establish an electrolyte-gating method for tuning the luminescence properties that are in transition metal dichalcogenide (TMDC) monolayers. We fabricate electric double-layer capacitors on TMDC/graphite heterostructures to investigate electric-field- and carrier-density-dependent photoluminescence. The exciton peak energy initially shows a slight quadratic red shift of ∼1 meV without carrier accumulations, which is caused by the quantum-confined Stark effect. In contrast, the exciton resonance exhibits a larger red shift up to 10 meV with the accumulated carrier density above 1013 cm-2. These results indicate that the optical transitions can be largely modulated by the carrier density control in S- and Se-based TMDCs, as triggered by the doping-induced band gap renormalization effect. To further inspire this modulation capability, we also apply our method to electrolyte-based TMDC light-emitting devices. Biasing solely in electrolyte-induced p-i-n junctions yields pronounced red shifts up to 40 meV for exciton and trion electroluminescence. Consequently, our approach reveals that the doping effects in the high-carrier-density regimes are potentially significant for efficient optical modulation in monolayer semiconductors.
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Affiliation(s)
- Jiang Pu
- Department of Applied Physics , Nagoya University , Nagoya 464-8603 , Japan
| | - Keichiro Matsuki
- Department of Advanced Science and Engineering , Waseda University , Tokyo 169-8555 , Japan
| | - Leiqiang Chu
- Department of Physics , National University of Singapore , 117551 Singapore
- Centre for Advanced 2D Materials , 117542 Singapore
| | - Yu Kobayashi
- Department of Physics , Tokyo Metropolitan University , Tokyo 192-0397 , Japan
| | - Shogo Sasaki
- Department of Physics , Tokyo Metropolitan University , Tokyo 192-0397 , Japan
| | - Yasumitsu Miyata
- Department of Physics , Tokyo Metropolitan University , Tokyo 192-0397 , Japan
| | - Goki Eda
- Department of Physics , National University of Singapore , 117551 Singapore
- Centre for Advanced 2D Materials , 117542 Singapore
- Department of Chemistry , National University of Singapore , 117542 Singapore
| | - Taishi Takenobu
- Department of Applied Physics , Nagoya University , Nagoya 464-8603 , Japan
- Department of Advanced Science and Engineering , Waseda University , Tokyo 169-8555 , Japan
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14
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Xu S, Yang J, Jiang H, Su F, Zeng Z. Transient photoconductivity and free carrier dynamics in a monolayer WS 2 probed by time resolved Terahertz spectroscopy. NANOTECHNOLOGY 2019; 30:265706. [PMID: 30861497 DOI: 10.1088/1361-6528/ab0f02] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The frequency and time resolved conductivity in a photoexcited large-area monolayer tungsten disulfide (WS2) have been simultaneously determined by using time-resolved terahertz spectroscopy. We use the Drude-Smith model to successfully reproduce the transient photoconductivity spectra, which demonstrate that localized free carriers, not bounded excitons, are responsible for the THz transport. Upon the optical excitation with 400 nm and 530 nm wavelength, the relaxation dynamics of the free carriers include fast and slow decay components with time constants approximately smaller than 1 ps and between 5-7 ps, respectively. The former sub-picosecond decay is attributed to the charge carrier loss induced by the exciton formation, while both the Auger recombination and the surface trapping can contribute to the slow relaxation.
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Affiliation(s)
- Shujuan Xu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China. University of Science and Technology of China, Hefei 230026, People's Republic of China
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15
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Miao R, Zhang Y, Tang Y, You J, Zhang Y, Shi L, Jiang T. Photoluminescence enhancement and ultrafast relaxation dynamics in a low-dimensional heterostructure: effect of plasmon-exciton coupling. OPTICS LETTERS 2018; 43:6093-6096. [PMID: 30548013 DOI: 10.1364/ol.43.006093] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2018] [Accepted: 10/31/2018] [Indexed: 06/09/2023]
Abstract
In this work, we present an in-depth study on a low-dimensional heterostructure comprising monolayer (ML) tungsten disulfide (WS2) and 1D plasmonic photonic crystal (PPC). Stable-state photoluminescence (PL) experiments are employed to study the optical properties of WS2 films with and without PPC. In addition, angle-resolved reflectance and PL microscopy measurements are used to identify the coupling effects between ML WS2 and 1D PPC. Furthermore, by means of femtosecond pump-probe experiments, the relaxation time for the newly proposed heterostructure is extracted to be 0.74 ps and 21.9 ps. Importantly, the underlying mechanism of the relaxation processes is also revealed in the hybrid for the first time, to the best of our knowledge.
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Vallan L, Canton-Vitoria R, Gobeze HB, Jang Y, Arenal R, Benito AM, Maser WK, D’Souza F, Tagmatarchis N. Interfacing Transition Metal Dichalcogenides with Carbon Nanodots for Managing Photoinduced Energy and Charge-Transfer Processes. J Am Chem Soc 2018; 140:13488-13496. [DOI: 10.1021/jacs.8b09204] [Citation(s) in RCA: 37] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Lorenzo Vallan
- Instituto de Carboquímica, (ICB-CSIC), C/Miguel Luesma
Castán 4, 50018 Zaragoza, Spain
| | - Ruben Canton-Vitoria
- Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, 11635 Athens, Greece
| | - Habtom B. Gobeze
- Department of Chemistry, University of North Texas, 305070, Denton, Texas 76203-5017, United States
| | - Youngwoo Jang
- Department of Chemistry, University of North Texas, 305070, Denton, Texas 76203-5017, United States
| | - Raul Arenal
- Laboratorio de Microscopias Avanzadas, Instituto de Nanociencia de Aragon, Universidad de Zaragoza, 50018 Zaragoza, Spain
- ARAID Foundation, 50018 Zaragoza, Spain
| | - Ana M. Benito
- Instituto de Carboquímica, (ICB-CSIC), C/Miguel Luesma
Castán 4, 50018 Zaragoza, Spain
| | - Wolfgang K. Maser
- Instituto de Carboquímica, (ICB-CSIC), C/Miguel Luesma
Castán 4, 50018 Zaragoza, Spain
| | - Francis D’Souza
- Department of Chemistry, University of North Texas, 305070, Denton, Texas 76203-5017, United States
| | - Nikos Tagmatarchis
- Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, 11635 Athens, Greece
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