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Kretzschmar T, Ritter S, Kumar A, Vogl T, Eilenberger F, Schmidt F. Quantitative Investigation of Quantum Emitter Yield in Drop-Casted Hexagonal Boron Nitride Nanoflakes. ACS APPLIED OPTICAL MATERIALS 2024; 2:1427-1435. [PMID: 39086657 PMCID: PMC11287792 DOI: 10.1021/acsaom.4c00200] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/29/2024] [Revised: 06/15/2024] [Accepted: 06/25/2024] [Indexed: 08/02/2024]
Abstract
Single photon emitters (SPEs) are a key component for their use as pure photon source in quantum technologies. In this study, we investigate the generation of SPEs from drop-casted hexagonal boron nitride (hBN) nanoflakes, examining the influence of the immersion solution and the source of hBN. We show that, depending on the utilized supplier and solution, the number and quality of the emitters change. We perform a comprehensive optical characterization of the deposited nanoflakes to assess the quality of the generated SPEs. Importantly, we provide quantitative data on SPE yields, highlighting significant variations among solvents and different sources of hBN. We find that hBN from Merck drop-casted in acetone provided the best quality emitters with a g (2) < 0.1 and photoluminescence intensities above 300 kCounts/s. Their number of SPEs among all photon emitters was also the highest, with about 14%, rendering a total yield of about 1.25% of all drop-casted flakes. These numbers hold particular significance when evaluating drop-casting as a practical method for the generation of SPEs and their deposition and incorporation within existing nanophotonic systems. By choosing appropriate solvents and source materials' quality and yield of SPEs can be significantly increased, showcasing further optimization potential for the development of future quantum applications.
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Affiliation(s)
- Tom Kretzschmar
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-University, D-07745 Jena, Germany
| | - Sebastian Ritter
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-University, D-07745 Jena, Germany
| | - Anand Kumar
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-University, D-07745 Jena, Germany
- Department
of Computer Engineering, School of Computation, Information and Technology, Technical University Munich, D-80333 Munich, Germany
- Munich
Center for Quantum Science and Technology (MCQST), D-80799 Munich, Germany
| | - Tobias Vogl
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-University, D-07745 Jena, Germany
- Department
of Computer Engineering, School of Computation, Information and Technology, Technical University Munich, D-80333 Munich, Germany
- Munich
Center for Quantum Science and Technology (MCQST), D-80799 Munich, Germany
| | - Falk Eilenberger
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-University, D-07745 Jena, Germany
- Fraunhofer
Institute for Applied Optics and Precision Engineering IOF, D-07745 Jena, Germany
- Max
Planck School of Photonics, D-07745 Jena, Germany
| | - Falko Schmidt
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-University, D-07745 Jena, Germany
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2
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Barth I, Deckart M, Conteduca D, Arruda G, Hayran Z, Pasko S, Krotkus S, Heuken M, Monticone F, Krauss TF, Martins ER, Wang Y. Lasing from a Large-Area 2D Material Enabled by a Dual-Resonance Metasurface. ACS NANO 2024; 18:12897-12904. [PMID: 38710615 PMCID: PMC11112975 DOI: 10.1021/acsnano.4c00547] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/12/2024] [Revised: 04/10/2024] [Accepted: 04/24/2024] [Indexed: 05/08/2024]
Abstract
Semiconducting transition metal dichalcogenides (TMDs) have gained significant attention as a gain medium for nanolasers, owing to their unique ability to be easily placed and stacked on virtually any substrate. However, the atomically thin nature of the active material in existing TMD lasers and the limited size due to mechanical exfoliation presents a challenge, as their limited output power makes it difficult to distinguish between true laser operation and other "laser-like" phenomena. Here, we present room temperature lasing from a large-area tungsten disulfide (WS2) monolayer, grown by a wafer-scale chemical vapor deposition (CVD) technique. The monolayer is placed on a dual-resonance dielectric metasurface with a rectangular lattice designed to enhance both absorption and emission, resulting in an ultralow threshold operation (threshold well below 1 W/cm2). We provide a thorough study of the laser performance, paying special attention to directionality, output power, and spatial coherence. Notably, our lasers demonstrated a coherence length of over 30 μm, which is several times greater than what has been reported for 2D material lasers so far. Our realization of a single-mode laser from a CVD-grown monolayer presents exciting opportunities for integration and the development of real-world applications.
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Affiliation(s)
- Isabel Barth
- School
of Physics, Engineering and Technology, University of York, York YO10 5DD, U.K.
| | - Manuel Deckart
- School
of Physics, Engineering and Technology, University of York, York YO10 5DD, U.K.
| | - Donato Conteduca
- School
of Physics, Engineering and Technology, University of York, York YO10 5DD, U.K.
| | - Guilherme
S. Arruda
- São
Carlos School of Engineering, Department of Electrical and Computer
Engineering, University of São Paulo,
São, Carlos-SP 13566-590, Brazil
| | - Zeki Hayran
- School
of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Sergej Pasko
- AIXTRON
SE, Dornkaulstraße.
2, Herzogenrath 52134, Germany
| | | | - Michael Heuken
- AIXTRON
SE, Dornkaulstraße.
2, Herzogenrath 52134, Germany
| | - Francesco Monticone
- School
of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Thomas F. Krauss
- School
of Physics, Engineering and Technology, University of York, York YO10 5DD, U.K.
| | - Emiliano R. Martins
- São
Carlos School of Engineering, Department of Electrical and Computer
Engineering, University of São Paulo,
São, Carlos-SP 13566-590, Brazil
| | - Yue Wang
- School
of Physics, Engineering and Technology, University of York, York YO10 5DD, U.K.
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3
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Zhong D, Gao S, Saccone M, Greer JR, Bernardi M, Nadj-Perge S, Faraon A. Carbon-Related Quantum Emitter in Hexagonal Boron Nitride with Homogeneous Energy and 3-Fold Polarization. NANO LETTERS 2024; 24:1106-1113. [PMID: 38240528 PMCID: PMC10835729 DOI: 10.1021/acs.nanolett.3c03628] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2024]
Abstract
Most hexagonal boron nitride (hBN) single-photon emitters (SPEs) studied to date suffer from variable emission energy and unpredictable polarization, two crucial obstacles to their application in quantum technologies. Here, we report an SPE in hBN with an energy of 2.2444 ± 0.0013 eV created via carbon implantation that exhibits a small inhomogeneity of the emission energy. Polarization-resolved measurements reveal aligned absorption and emission dipole orientations with a 3-fold distribution, which follows the crystal symmetry. Photoluminescence excitation (PLE) spectroscopy results show the predictability of polarization is associated with a reproducible PLE band, in contrast with the non-reproducible bands found in previous hBN SPE species. Photon correlation measurements are consistent with a three-level model with weak coupling to a shelving state. Our ab initio excited-state calculations shed light on the atomic origin of this SPE defect, which consists of a pair of substitutional carbon atoms located at boron and nitrogen sites separated by a hexagonal unit cell.
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Affiliation(s)
- Ding Zhong
- Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
- Kavli Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, United States
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, United States
| | - Shiyuan Gao
- Department of Applied Physics and Material Science, California Institute of Technology, Pasadena, California 91125, United States
| | - Max Saccone
- Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, United States
| | - Julia R Greer
- Division of Engineering and Applied Science, California Institute of Technology, Pasadena, California 91125, United States
| | - Marco Bernardi
- Department of Applied Physics and Material Science, California Institute of Technology, Pasadena, California 91125, United States
| | - Stevan Nadj-Perge
- Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, United States
| | - Andrei Faraon
- Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
- Kavli Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, United States
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, United States
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4
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Granger F, Raj Gosain S, Nogues G, Bellet-Amalric E, Cibert J, Ferrand D, Kheng K. Brightness and purity of a room-temperature single-photon source in the blue-green range. OPTICS LETTERS 2023; 48:3833-3836. [PMID: 37527061 DOI: 10.1364/ol.492039] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2023] [Accepted: 06/04/2023] [Indexed: 08/03/2023]
Abstract
We discuss a promising solid-state system that emits single photons at room temperature in the blue-green range, making it an attractive candidate for quantum communications in free space and underwater. The active element is a core-shell ZnSe tapered nanowire embedding a single CdSe quantum dot grown by molecular beam epitaxy. A patterned substrate enables a comprehensive study of a single nanowire using various methods. Our source shows potential for achieving a total brightness of 0.17 photon per pulse and anti-bunching with g(2)(0) < 0.3 within a restricted spectral window. Additionally, we analyze the impact of charged excitons on the g(2)(0) value in different spectral ranges.
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5
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Scheuer KG, Kirwin PS, Hornig GJ, DeCorby RG. Enhanced emission from hBN in sputtered microcavities. APPLIED OPTICS 2023; 62:4866-4870. [PMID: 37707262 DOI: 10.1364/ao.491968] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Accepted: 05/23/2023] [Indexed: 09/15/2023]
Abstract
In this observational study, we embed few-layer hexagonal boron nitride (hBN) inside a planar Fabry-Perot cavity fabricated using a pulsed DC magnetron sputtering system and show that the hBN retains its inherent visible range, defect-based luminescent properties following relatively energetic deposition processing. The observed surface-normal emission enhancement factor of ∼40 is in good agreement with theoretical predictions. We also found that embedded hBN subjected to a rapid thermal annealing treatment exhibits a cracking effect where the edges of the material glow distinctly brighter than adjacent regions. Our results might inform future efforts involving monolithic integration of hBN active layers.
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6
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Montblanch ARP, Barbone M, Aharonovich I, Atatüre M, Ferrari AC. Layered materials as a platform for quantum technologies. NATURE NANOTECHNOLOGY 2023:10.1038/s41565-023-01354-x. [PMID: 37322143 DOI: 10.1038/s41565-023-01354-x] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 02/17/2023] [Indexed: 06/17/2023]
Abstract
Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.
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Affiliation(s)
- Alejandro R-P Montblanch
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Matteo Barbone
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Munich Center for Quantum Science and Technology, (MCQST), Munich, Germany
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Garching, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK.
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7
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Murtaza G, Colautti M, Hilke M, Lombardi P, Cataliotti FS, Zavatta A, Bacco D, Toninelli C. Efficient room-temperature molecular single-photon sources for quantum key distribution. OPTICS EXPRESS 2023; 31:9437-9447. [PMID: 37157515 DOI: 10.1364/oe.476440] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Quantum key distribution (QKD) allows the distribution of cryptographic keys between multiple users in an information-theoretic secure way, exploiting quantum physics. While current QKD systems are mainly based on attenuated laser pulses, deterministic single-photon sources could give concrete advantages in terms of secret key rate (SKR) and security owing to the negligible probability of multi-photon events. Here, we introduce and demonstrate a proof-of-concept QKD system exploiting a molecule-based single-photon source operating at room temperature and emitting at 785 nm. With an estimated maximum SKR of 0.5 Mbps, our solution paves the way for room-temperature single-photon sources for quantum communication protocols.
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8
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Jones C, Xavier J, Vartabi Kashanian S, Nguyen M, Aharonovich I, Vollmer F. Time-dependent Mandel Q parameter analysis for a hexagonal boron nitride single photon source. OPTICS EXPRESS 2023; 31:10794-10804. [PMID: 37157618 DOI: 10.1364/oe.485216] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
The time-dependent Mandel Q parameter, Q(T), provides a measure of photon number variance for a light source as a function of integration time. Here, we use Q(T) to characterise single photon emission from a quantum emitter in hexagonal boron nitride (hBN). Under pulsed excitation a negative Q parameter was measured, indicating photon antibunching at an integration time of 100 ns. For larger integration times Q is positive and the photon statistics become super-Poissonian, and we show by comparison with a Monte Carlo simulation for a three-level emitter that this is consistent with the effect of a metastable shelving state. Looking towards technological applications for hBN single photon sources, we propose that Q(T) provides valuable information on the intensity stability of single photon emission. This is useful in addition to the commonly used g(2)(τ) function for the complete characterisation of a hBN emitter.
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9
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Preuß JA, Gehring H, Schmidt R, Jin L, Wendland D, Kern J, Pernice WHP, de Vasconcellos SM, Bratschitsch R. Low-Divergence hBN Single-Photon Source with a 3D-Printed Low-Fluorescence Elliptical Polymer Microlens. NANO LETTERS 2023; 23:407-413. [PMID: 36445803 DOI: 10.1021/acs.nanolett.2c03001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Efficiently collecting light from single-photon emitters is crucial for photonic quantum technologies. Here, we develop and use an ultralow fluorescence photopolymer to three-dimensionally print micrometer-sized elliptical lenses on individual precharacterized single-photon emitters in hexagonal boron nitride (hBN) nanocrystals, operating in the visible regime. The elliptical lens design beams the light highly efficiently into the far field, rendering bulky objective lenses obsolete. Using back focal plane imaging, we confirm that the emission is collimated to a narrow low-divergence beam with a half width at half-maximum of 2.2°. Using photon correlation measurements, we demonstrate that the single-photon character remains undisturbed by the polymer lens. The strongly directed emission and increased collection efficiency is highly beneficial for quantum optical experiments. Furthermore, our approach paves the way for a highly parallel fiber-based detection of single photons from hBN nanocrystals.
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Affiliation(s)
- Johann A Preuß
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
| | - Helge Gehring
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
- Center for Soft Nanoscience, University of Münster, Heisenbergstr. 11, 48149 Münster, Germany
| | - Robert Schmidt
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
| | - Lin Jin
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
- Center for Soft Nanoscience, University of Münster, Heisenbergstr. 11, 48149 Münster, Germany
| | - Daniel Wendland
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
- Center for Soft Nanoscience, University of Münster, Heisenbergstr. 11, 48149 Münster, Germany
| | - Johannes Kern
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
| | - Wolfram H P Pernice
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
- Center for Soft Nanoscience, University of Münster, Heisenbergstr. 11, 48149 Münster, Germany
- Kirchhoff-Institute for Physics, University of Heidelberg, Im Neuenheimer Feld 227, 69120 Heidelberg, Germany
| | - Steffen Michaelis de Vasconcellos
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
- Department of Physics, TU Dortmund University, Otto-Hahn-Str. 4, 44227 Dortmund, Germany
| | - Rudolf Bratschitsch
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
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10
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Gritsienko AV, Duleba A, Pugachev MV, Kurochkin NS, Vlasov II, Vitukhnovsky AG, Kuntsevich AY. Photodynamics of Bright Subnanosecond Emission from Pure Single-Photon Sources in Hexagonal Boron Nitride. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4495. [PMID: 36558349 PMCID: PMC9782090 DOI: 10.3390/nano12244495] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/18/2022] [Revised: 12/06/2022] [Accepted: 12/16/2022] [Indexed: 06/17/2023]
Abstract
Bright and stable emitters of single indistinguishable photons are crucial for quantum technologies. The origin of the promising bright emitters recently observed in hexagonal boron nitride (hBN) still remains unclear. This study reports pure single-photon sources in multi-layered hBN at room temperature that demonstrate high emission rates. The quantum emitters are introduced with argon beam treatment and air annealing of mechanically exfoliated hBN flakes with thicknesses of 5-100 nm. Spectral and time-resolved measurements reveal the emitters have more than 1 GHz of excited-to-ground state transition rate. The observed photoswitching between dark and bright states indicates the strong sensitivity of the emitter to the electrostatic environment and the importance of the indirect excitation for the photodynamics.
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Affiliation(s)
- Alexander V. Gritsienko
- P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Pr., 119991 Moscow, Russia
- Moscow Institute of Physics and Technology, National Research University, 9 Institutskií Per., 141700 Dolgoprudnyí, Russia
| | - Aliaksandr Duleba
- P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Pr., 119991 Moscow, Russia
| | - Mikhail V. Pugachev
- P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Pr., 119991 Moscow, Russia
| | - Nikita S. Kurochkin
- P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Pr., 119991 Moscow, Russia
- Moscow Institute of Physics and Technology, National Research University, 9 Institutskií Per., 141700 Dolgoprudnyí, Russia
| | - Igor I. Vlasov
- Moscow Institute of Physics and Technology, National Research University, 9 Institutskií Per., 141700 Dolgoprudnyí, Russia
- Prokhorov General Physics Institute of the Russian Academy of Sciences, Vavilov str. 38, 119991 Moscow, Russia
| | - Alexei G. Vitukhnovsky
- P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Pr., 119991 Moscow, Russia
- Moscow Institute of Physics and Technology, National Research University, 9 Institutskií Per., 141700 Dolgoprudnyí, Russia
| | - Alexandr Yu. Kuntsevich
- P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Pr., 119991 Moscow, Russia
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11
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Liu Q, Huang Y, Du Y, Zhao Z, Geng M, Zhang Z, Wei K. Advances in Chip-Based Quantum Key Distribution. ENTROPY 2022; 24:1334. [PMCID: PMC9600573 DOI: 10.3390/e24101334] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Accepted: 09/15/2022] [Indexed: 06/17/2023]
Abstract
Quantum key distribution (QKD), guaranteed by the principles of quantum mechanics, is one of the most promising solutions for the future of secure communication. Integrated quantum photonics provides a stable, compact, and robust platform for the implementation of complex photonic circuits amenable to mass manufacture, and also allows for the generation, detection, and processing of quantum states of light at a growing system’s scale, functionality, and complexity. Integrated quantum photonics provides a compelling technology for the integration of QKD systems. In this review, we summarize the advances in integrated QKD systems, including integrated photon sources, detectors, and encoding and decoding components for QKD implements. Complete demonstrations of various QKD schemes based on integrated photonic chips are also discussed.
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Affiliation(s)
- Qiang Liu
- Guangxi Key Laboratory of Multimedia Communications and Network Technology, School of Computer, Electronics and Information, Guangxi University, Nanning 530004, China
| | - Yinming Huang
- Guangxi Key Laboratory of Multimedia Communications and Network Technology, School of Computer, Electronics and Information, Guangxi University, Nanning 530004, China
| | - Yongqiang Du
- Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Zhengeng Zhao
- Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Minming Geng
- Guangxi Key Laboratory of Multimedia Communications and Network Technology, School of Computer, Electronics and Information, Guangxi University, Nanning 530004, China
| | - Zhenrong Zhang
- Guangxi Key Laboratory of Multimedia Communications and Network Technology, School of Computer, Electronics and Information, Guangxi University, Nanning 530004, China
| | - Kejin Wei
- Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
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12
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Zeng HZ, Ngyuen MAP, Ai X, Bennet A, Solntsev AS, Laucht A, Al-Juboori A, Toth M, Mildren RP, Malaney R, Aharonovich I. Integrated room temperature single-photon source for quantum key distribution: publisher's note. OPTICS LETTERS 2022; 47:2161. [PMID: 35486749 DOI: 10.1364/ol.460614] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2022] [Indexed: 06/14/2023]
Abstract
This publisher's note contains a correction to Opt. Lett.47, 1673 (2022)10.1364/OL.454450.
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