Copper—antimony and copper—bismuth chalcogenides—Research opportunities and review for solar photovoltaics

Investigating Cu-Site Doped Cu-Sb-S Nanoparticles Using Photoelectron and Electron Paramagnetic Resonance Spectroscopy

Tetrahedrite (Cu12Sb4S13) and famatinite (Cu3SbS4) are good candidates for green energy applications because they possess promising thermoelectric and photovoltaic properties as well as contain earth-abundant and nontoxic constituents. Herein, X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and electron paramagnetic resonance spectroscopy (EPR) methods examined inherent electronic properties and interatomic magnetic interactions of Cu-site doped tetrahedrite and famatinite nanomaterials. An energy-efficient modified polyol method was utilized for the synthesis of tetrahedrite and famatinite nanoparticles doped on the Cu-site with Zn, Fe, Ni, Mn, and Co. This is the first parallel study of tetrahedrite and famatinite nanomaterials with XPS, UPS, and EPR methods alongside a systematic analysis of dopant-dependent effects on the electronic structure and magnetic interactions for each material. XPS showed that the Cu and Sb species in tetrahedrite and famatinite possess different oxidation states, while UPS characterization reveals larger dopant-dependent shifts in the work function for tetrahedrite nanoparticles (4.21 to 4.79 eV) than for famatinite nanoparticles (4.57 to 4.77 eV). Finally, all famatinite nanoparticles display an EPR signal, indicating trace amounts of paramagnetic Cu(II) present below the detection limit of XPS. For tetrahedrite, EPR signatures were observed only for the Zn-doped and Mn-doped nanoparticles, suggesting signal broadening from Cu-Cu spin exchange or spin-lattice relaxation. This study demonstrates the complementary nature of XPS and EPR techniques for studying the oxidation states of metals in solid-state nanomaterials. Comparing the electronic and magnetic properties of tetrahedrite and famatinite while studying the impact of dopant incorporation will guide future endeavors in designing sustainable, high-performance materials for renewable energy applications.

Study of defect density of copper vacancies in chalcogenide CuSbS2, CuSbSe2, CuBiS2, and CuBiSe2 heterojunction thin-film solar cells

In the past decade, a new family of ternary chalcogenide absorber (TCA) materials MIMIIX2 (where MI = Cu, Ag, Pb; MII = Sb, Bi, In; and X = S, Se, Te) have been studied. The copper family of ternary chalcogenide CuSbS2 CuSbSe2 CuBiS2, and CuBiSe2 is an amazing absorber material for thin-film solar cells because of their suitable band gap, high absorption coefficient and inexpensive, nontoxic, environment friendly and sustainable nature. In the presented work, first time simulated defect density of copper vacancies in CuSbS2 (CAS), CuSbSe2 (CASe), CuBiS2 (CBS) and CuBiSe2 (CBSe) has based heterojunction thin-film solar cells (HJTFSCs) with buffer CdS, intrinsic i-ZnO, window ZnO: Al and back contact Mo and set the cell scheming ZnO: Al/i-ZnO/n-CdS/p-TCA/Mo using SCAPS 1D. Major focus of this paper is on the influence of copper vacancies defect density that impact on the performance of ternary chalcogenide with various parameters of solar cells, i.e. short-circuit current density (Jsc), open-circuit voltage (Voc), form factor (FF) and efficiency (η). The cell parameter set at constant temperature 300 K, thickness 2.5 μm, carrier density 5 × 1016 cm-3, front internal transmission coefficient 1 and illumination intensity 100 mW/cm2 with AM1.5 sun light. This study clarifies the potential benefits to utilizing of ternary chalcogenide compounds as absorber material for solar cell fabrication.

Three-Fold Coordination of Copper in Sulfides: A Blockade for Hole Carrier Delocalization but a Driving Force for Ultralow Thermal Conductivity

Copper-rich sulfides are very promising for energy conversion applications due to their environmental compatibility, cost effectiveness, and earth abundance. Based on a comparative analysis of the structural and transport properties of Cu3BiS3 with those of tetrahedrite (Cu12Sb4S13) and other Cu-rich sulfides, we highlight the role of the cationic coordination types and networks on the electrical and thermal properties. By precession-assisted 3D electron diffraction analysis, we find very high anisotropic thermal vibration of copper attributed to its 3-fold coordination, with an anisotropic atomic displacement parameter up to 0.09 Å2. Density functional theory calculations reveal that these Cu atoms are weakly bonded and give rise to low-energy Einstein-like vibrational modes that strongly scatter heat-carrying acoustic phonons, leading to ultralow thermal conductivity. Importantly, we demonstrate that the 3-fold coordination of copper in Cu3BiS3 and in other copper-rich sulfides constituted of interconnected CuS3 networks causes a hole blockade. This phenomenon hinders the possibility of optimizing the carrier concentration and electronic properties through mixed valency Cu+/Cu2+, differently from tetrahedrite and most other copper-rich chalcogenides, where the main interconnected Cu-S network is built of CuS4 tetrahedra. The comparison with various copper-rich sulfides demonstrates that seeking for frameworks characterized by the coexistence of tetrahedral and 3-fold coordinated copper is very attractive for the discovery of efficient thermoelectric copper-rich sulfides. Considering that lattice vibrations and carrier concentration are key factors for engineering transport phenomena (electronic, phonon, ionic, etc.) in copper-rich chalcogenides for various types of applications, our findings improve the guidelines for the design of materials enabling sustainable energy solutions with wide-ranging applications.

Multinary Tetrahedrite (Cu12-x-yMxNySb4S13) Nanoparticles: Tailoring Thermal and Optical Properties with Copper-Site Dopants

Tetrahedrite (Cu12Sb4S13) is an earth-abundant and nontoxic compound with prospective applications in green energy technologies such as thermoelectric waste heat recycling or photovoltaic power generation. A facile, one-pot solution-phase modified polyol method has been developed that produces high-purity nanoscale tetrahedrite products with exceptional stoichiometric and phase control. This modified polyol method is used here to produce phase-pure quaternary and quintenary tetrahedrite nanoparticles doped on the Cu-site with Zn, Fe, Ni, Mn, or Co. This is the first time that Cu-site codoped quintenary tetrahedrite and Mn-doped quaternary tetrahedrite have been produced by a solution-phase method. X-ray diffraction shows phase-pure tetrahedrite, while scanning and transmission electron microscopy show the size and morphology of the nanomaterials. Energy dispersive X-ray spectroscopy confirms nanoparticles have near-stoichiometric elemental compositions. Thermal stability of quintenary codoped tetrahedrite material is analyzed using thermogravimetric analysis, finding that codoping with Mn, Fe, Ni, and Zn increased thermal stability while codoping with cobalt decreased thermal stability. This is the first systematic study of the optical properties of quaternary and quintenary tetrahedrite nanoparticles doped on the Cu-site. Visible-NIR diffuse reflectance spectroscopy reveals that the quaternary and quintenary tetrahedrite nanoparticles have direct optical band gaps ranging from 1.88 to 2.04 eV. Data from thermal and optical characterization support that codoped tetrahedrite nanoparticles are composed of quintenary grains. This research seeks to enhance understanding of the material properties of tetrahedrite, leading to the optimization of sustainable, nontoxic, and high-performance photovoltaic and thermoelectric materials.

Optical Properties of ScnYn (Y = N, P As) Nanoparticles

In this work, using Density Functional Theory (DFT) and Time Dependent DFT, the absorption spectrum, the optical gap, and the binding energy of scandium pnictogen family nanoparticles (NPs) are examined. The calculated structures are created from an initial cubic-like building block of the form Sc4Y4, where Y = N, P, As after elongation along one and two perpendicular directions. The existence of stable structures over a wide range of morphologies was one of the main findings of this research, and this led to the study of several exotic NPs. The absorption spectrum of all the studied structures is within the visible spectrum, while the optical gap varies between 1.62 and 3 eV. These NPs could be used in the field in photovoltaics (quantum dot sensitized solar cells) and display applications.

Solution-Processable Cu3BiS3 Thin Films: Growth Process Insights and Increased Charge Generation Properties by Interface Modification

Cu3BiS3 thin films are fabricated via spin coating of precursor solutions containing copper and bismuth xanthates onto planar glass substrates or mesoporous metal oxide scaffolds followed by annealing at 300 °C to convert the metal xanthates into copper bismuth sulfide. Detailed insights into the film formation are gained from time-resolved simultaneous small and wide angle X-ray scattering measurements. The Cu3BiS3 films show a high absorption coefficient and a band gap of 1.55 eV, which makes them attractive for application in photovoltaic devices. Transient absorption spectroscopic measurements reveal that charge generation yields in mesoporous TiO2/Cu3BiS3 heterojunctions can be significantly improved by the introduction of an In2S3 interlayer, and long-lived charge carriers (t50% of 10 μs) are found.

Synthesis and Electronic Structure of Mid-Infrared Absorbing Cu3SbSe4 and CuxSbSe4 Nanocrystals

Aliovalent I-V-VI semiconductor nanocrystals are promising candidates for thermoelectric and optoelectronic applications. Famatinite Cu3SbSe4 stands out due to its high absorption coefficient and narrow band gap in the mid-infrared spectral range. This paper combines experiment and theory to investigate the synthesis and electronic structure of colloidal CuxSbSe4 nanocrystals. We achieve predictive composition control of size-uniform CuxSbSe4 (x = 1.9-3.4) nanocrystals. Density functional theory (DFT)-parametrized tight-binding simulations on nanocrystals show that the more the Cu-vacancies, the wider the band gap of CuxSbSe4 nanocrystals, a trend which we also confirm experimentally via FTIR spectroscopy. We show that SbCu antisite defects can create mid-gap states, which may give rise to sub-bandgap absorption. This work provides a detailed study of CuxSbSe4 nanocrystals and highlights the potential opportunities as well as challenges for their application in infrared devices.

Nested order-disorder framework containing a crystalline matrix with self-filled amorphous-like innards

Solids can be generally categorized by their structures into crystalline and amorphous states with different interactions among atoms dictating their properties. Crystalline-amorphous hybrid structures, combining the advantages of both ordered and disordered components, present a promising opportunity to design materials with emergent collective properties. Hybridization of crystalline and amorphous structures at the sublattice level with long-range periodicity has been rarely observed. Here, we report a nested order-disorder framework (NOF) constructed by a crystalline matrix with self-filled amorphous-like innards that is obtained by using pressure to regulate the bonding hierarchy of Cu12Sb4S13. Combined in situ experimental and computational methods demonstrate the formation of disordered Cu sublattice which is embedded in the retained crystalline Cu framework. Such a NOF structure gives a low thermal conductivity (~0.24 W·m-1·K-1) and a metallic electrical conductivity (8 × 10-6 Ω·m), realizing the collaborative improvement of two competing physical properties. These findings demonstrate a category of solid-state materials to link the crystalline and amorphous forms in the sublattice-scale, which will exhibit extraordinary properties.

Structural and Optical Characterization of Mechanochemically Synthesized CuSbS2 Compounds

One of the areas of research on materials for thin-film solar cells focuses on replacing In and Ga with more earth-abundant elements. In that respect, chalcostibite (CuSbS₂) is being considered as a promising environmentally friendly and cost-effective photovoltaic absorber material. In the present work, single CuSbS₂ phase was synthesized directly by a short-duration (2 h) mechanochemical-synthesis step starting from mixtures of elemental powders. X-ray diffraction analysis of the synthesized CuSbS₂ powders revealed a good agreement with the orthorhombic chalcostibite phase, space group Pnma, and a crystallite size of 26 nm. Particle-size characterization revealed a multimodal distribution with a median diameter ranging from of 2.93 μm to 3.10 μm. The thermal stability of the synthesized CuSbS₂ powders was evaluated by thermogravimetry and differential thermal analysis. No phase change was observed by heat-treating the mechanochemically synthesized powders at 350 °C for 24 h. By UV-VIS-NIR spectroscopy the optical band gap was determined to be 1.41 eV, suggesting that the mechanochemically synthesized CuSbS₂ can be considered suitable to be used as absorber materials. Overall, the results show that the mechanochemical process is a viable route for the synthesis of materials for photovoltaic applications.

Emerging Chalcogenide Thin Films for Solar Energy Harvesting Devices

Chalcogenide semiconductors offer excellent optoelectronic properties for their use in solar cells, exemplified by the commercialization of Cu(In,Ga)Se₂- and CdTe-based photovoltaic technologies. Recently, several other chalcogenides have emerged as promising photoabsorbers for energy harvesting through the conversion of solar energy to electricity and fuels. The goal of this review is to summarize the development of emerging binary (Sb₂X₃, GeX, SnX), ternary (Cu₂SnX₃, Cu₂GeX₃, CuSbX₂, AgBiX₂), and quaternary (Cu₂ZnSnX₄, Ag₂ZnSnX₄, Cu₂CdSnX₄, Cu₂ZnGeX₄, Cu₂BaSnX₄) chalcogenides (X denotes S/Se), focusing especially on the comparative analysis of their optoelectronic performance metrics, electronic band structure, and point defect characteristics. The performance limiting factors of these photoabsorbers are discussed, together with suggestions for further improvement. Several relatively unexplored classes of chalcogenide compounds (such as chalcogenide perovskites, bichalcogenides, etc.) are highlighted, based on promising early reports on their optoelectronic properties. Finally, pathways for practical applications of emerging chalcogenides in solar energy harvesting are discussed against the backdrop of a market dominated by Si-based solar cells.

Perovskite-inspired materials for photovoltaics and beyond-from design to devices

Lead-halide perovskites have demonstrated astonishing increases in power conversion efficiency in photovoltaics over the last decade. The most efficient perovskite devices now outperform industry-standard multi-crystalline silicon solar cells, despite the fact that perovskites are typically grown at low temperature using simple solution-based methods. However, the toxicity of lead and its ready solubility in water are concerns for widespread implementation. These challenges, alongside the many successes of the perovskites, have motivated significant efforts across multiple disciplines to find lead-free and stable alternatives which could mimic the ability of the perovskites to achieve high performance with low temperature, facile fabrication methods. This Review discusses the computational and experimental approaches that have been taken to discover lead-free perovskite-inspired materials, and the recent successes and challenges in synthesizing these compounds. The atomistic origins of the extraordinary performance exhibited by lead-halide perovskites in photovoltaic devices is discussed, alongside the key challenges in engineering such high-performance in alternative, next-generation materials. Beyond photovoltaics, this Review discusses the impact perovskite-inspired materials have had in spurring efforts to apply new materials in other optoelectronic applications, namely light-emitting diodes, photocatalysts, radiation detectors, thin film transistors and memristors. Finally, the prospects and key challenges faced by the field in advancing the development of perovskite-inspired materials towards realization in commercial devices is discussed.

Impurity Phases and Optoelectronic Properties of CuSbSe2 Thin Films Prepared by Cosputtering Process for Absorber Layer in Solar Cells

When there is a choice of materials for an application, particular emphasis should be given to the development of those that are low-cost, nontoxic, and Earth-abundant. Chalcostibite CuSbSe2 has gained attention as a potential absorber material for thin-film solar cells, since it exhibits a high absorption coefficient. In this study, CuSbSe2 thin films were deposited by radio frequency magnetron cosputtering with CuSe2 and Sb targets. A series of CuSbxSe2 thin films were prepared with different Sb contents adjusted by sputtering power, followed by rapid thermal annealing. Impurity phases and surface morphology of Cu–Sb–Se systems were directly affected by the Sb sputtering power, with the formation of volatile components. The crystallinity of the CuSbSe2 thin films was also enhanced in the near-stoichiometric system at an Sb sputtering power of 15 W, and considerable degradation in crystallinity occurred with a slight increase over 19 W. Resistivity, carrier mobility, and carrier concentration of the near-stoichiometric thin film were 14.4 Ω-cm, 3.27 cm2/V∙s, and 1.33 × 1017 cm−3, respectively. The optical band gap and absorption coefficient under the same conditions were 1.7 eV and 1.75 × 105 cm−1, which are acceptable for highly efficient thin-film solar cells.

Multinary copper-based chalcogenide nanocrystal systems from the perspective of device applications

Multinary chalcogenide semiconductor nanocrystals are a unique class of materials as they offer flexibility in composition, structure, and morphology for controlled band gap and optical properties. They offer a vast selection of materials for energy conversion, storage, and harvesting applications. Among the multinary chalcogenides, Cu-based compounds are the most attractive in terms of sustainability as many of them consist of earth-abundant elements. There has been immense progress in the field of Cu-based chalcogenides for device applications in the recent years. This paper reviews the state of the art synthetic strategies and application of multinary Cu-chalcogenide nanocrystals in photovoltaics, photocatalysis, light emitting diodes, supercapacitors, and luminescent solar concentrators. This includes the synthesis of ternary, quaternary, and quinary Cu-chalcogenide nanocrystals. The review also highlights some emerging experimental and computational characterization approaches for multinary Cu-chalcogenide semiconductor nanocrystals. It discusses the use of different multinary Cu-chalcogenide compounds, achievements in device performance, and the recent progress made with multinary Cu-chalcogenide nanocrystals in various energy conversion and energy storage devices. The review concludes with an outlook on some emerging and future device applications for multinary Cu-chalcogenides, such as scalable luminescent solar concentrators and wearable biomedical electronics.

Cu4Bi4Se9: A Thermoelectric Symphony of Rattling, Anharmonic Lone-pair, and Structural Complexity

Thermoelectric technology, enabling an environmentally friendly direct heat to electricity conversion, provides a possible alternative energy solution. To obtain a higher thermoelectric conversion efficiency, a larger dimensionless figure of merit ZT is required, which is, however, very difficult owing to the mutually restricted and even reversely correlated key property parameters. Herein, we report for the first time the thermoelectric properties of novel Cu₄Bi₄S₉ and Cu₄Bi₄Se₉ materials with complicated orthorhombic Pnma structures. Cu₄Bi₄Se₉ exhibits an extremely low lattice thermal conductivity of about 0.29-0.35 W m^-1 K^-1 that is mainly ascribed to the high lattice anharmonicity coming from the synergistic effect of the crystal structure complexity, soft Cu-Se bonds with lower bonding energy, rattling of the Cu atoms, and the high anharmonicity of Bi atoms carrying stereochemically active lone-pair electrons. In spite of its poor electrical conductivity of 7.33 S cm^-1, Cu₄Bi₄Se₉ realizes a power factor of about 1.37 μW cm^-1 K^-2 at ∼530 K, and a figure of merit, ZT ∼0.24 at ∼530 K. Such a value is comparable with those of the Cu/Ag-Bi/Sb-S/Se-based ternary compounds, particularly, the 19 times higher ZT improvement with respect to the isostructural Cu₄Bi₄S₉ suggests that the enhancing factors mentioned above play significant roles.

Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu3BiS3 for Photovoltaics

The earth-abundant semiconductor Cu₃BiS₃ (CBS) exhibits promising photovoltaic properties and is often considered analogous to the solar absorbers copper indium gallium diselenide (CIGS) and copper zinc tin sulfide (CZTS) despite few device reports. The extent to which this is justifiable is explored via a thorough X-ray photoemission spectroscopy (XPS) analysis: spanning core levels, ionization potential, work function, surface contamination, cleaning, band alignment, and valence-band density of states. The XPS analysis overcomes and addresses the shortcomings of prior XPS studies of this material. Temperature-dependent absorption spectra determine a 1.2 eV direct band gap at room temperature; the widely reported 1.4-1.5 eV band gap is attributed to weak transitions from the low density of states of the topmost valence band previously being undetected. Density functional theory HSE06 + SOC calculations determine the band structure, optical transitions, and well-fitted absorption and Raman spectra. Valence band XPS spectra and model calculations find the CBS bonding to be superficially similar to CIGS and CZTS, but the Bi³⁺ cations (and formally occupied Bi 6s orbital) have fundamental impacts: giving a low ionization potential (4.98 eV), suggesting that the CdS window layer favored for CIGS and CZTS gives detrimental band alignment and should be rejected in favor of a better aligned material in order for CBS devices to progress.