Multinuclear Tin-Based Macrocyclic Organometallic Resist for EUV Photolithography

We report a new photoresist based on a multinuclear tin-based macrocyclic complex and its performance for extreme UV (EUV) photolithography. The new photoresist has a trinuclear macrocyclic structure containing three salicylhydroxamic acid ligands and six Sn-CH3 bonds, which was confirmed by multinuclear nuclear magnetic resonance (NMR) and FT-IR spectroscopies and single-crystal X-ray diffraction study. The resist exhibited good humidity, air, and thermal stabilities, while showing good photochemical reactivity. Photochemical cross-linking of the resist was confirmed by X-ray photoelectron and solid-state NMR spectroscopic analyses. EUV photolithography with the 44 nm-thick film on a silicon wafer revealed a line-edge-roughness (LER) of 1.1 nm in a 20 nm half-pitch pattern. The Z-factor, a metric that gauges the performance of photoresists by considering the tradeoff between resolution, LER, and sensitivity (RLS), was estimated to be 1.28 × 10-8 mJ·nm3, indicating its great performance compared to the EUV photoresists reported in the literature.

Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography

Extreme ultraviolet lithography (EUVL) is a leading technology in semiconductor manufacturing, enabling the creation of high-resolution patterns essential for advanced microelectronics. This review highlights recent progress in inorganic metal-oxide-based photoresists, with a focus on their applications in EUVL. The unique properties of zinc-based, tin-oxygen, and IVB group inorganic photoresists are examined, showcasing their enhanced chemical reactivity and precise patterning capabilities. Key advancements include the development of zinc oxide and tin oxide nanoparticles, which demonstrate significant improvements in photon absorption and solubility under extreme ultraviolet exposure. Additionally, the review delves into the photochemical reactions of tin-oxygen clusters and the influence of various ligands on film density and cross-linking. The findings suggest that these inorganic photoresists not only improve photolithographic performance but also hold potential for broader applications, such as pyroelectric infrared sensors and 3D printing. Future research directions are outlined, including the optimization of process parameters, the exploration of new ligand and metal combinations, and the evaluation of the environmental benefits of inorganic photoresists over traditional organic ones. These advancements are poised to further enhance the resolution and patterning capabilities required for next-generation semiconductor devices.

Advanced lithography materials: From fundamentals to applications

The semiconductor industry has long been driven by advances in a nanofabrication technology known as lithography, and the fabrication of nanostructures on chips relies on an important coating, the photoresist layer. Photoresists are typically spin-coated to form a film and have a photolysis solubility transition and etch resistance that allow for rapid fabrication of nanostructures. As a result, photoresists have attracted great interest in both fundamental research and industrial applications. Currently, the semiconductor industry has entered the era of extreme ultraviolet lithography (EUVL) and expects photoresists to be able to fabricate sub-10 nm structures. In order to realize sub-10 nm nanofabrication, the development of photoresists faces several challenges in terms of sensitivity, etch resistance, and molecular size. In this paper, three types of lithographic mechanisms are reviewed to provide strategies for designing photoresists that can enable high-resolution nanofabrication. The discussion of the current state of the art in optical lithography is presented in depth. Practical applications of photoresists and related recent advances are summarized. Finally, the current achievements and remaining issues of photoresists are discussed and future research directions are envisioned.

Fluorine-Rich Zinc Oxoclusters as Extreme Ultraviolet Photoresists: Chemical Reactions and Lithography Performance

The absorption of extreme ultraviolet (EUV) radiation by a photoresist strongly depends on its atomic composition. Consequently, elements with a high EUV absorption cross section can assist in meeting the demand for higher photon absorbance by the photoresist to improve the sensitivity and reduce the photon shot noise induced roughness. In this work, we enhanced the EUV absorption of the methacrylic acid ligands of Zn oxoclusters by introducing fluorine atoms. We evaluated the lithography performance of this fluorine-rich material as a negative tone EUV photoresist along with extensive spectroscopic and microscopic studies, providing deep insights into the underlying mechanism. UV-vis spectroscopy studies demonstrate that the presence of fluorine in the oxocluster enhances its stability in the thin films to the ambient atmosphere. However, the EUV photoresist sensitivity (D ₅₀) of the fluorine-rich oxocluster is decreased compared to its previously studied methacrylic acid analogue. Scanning transmission X-ray microscopy and in situ X-ray photoelectron spectroscopy in combination with FTIR and UV-vis spectroscopy were used to gain insights into the chemical changes in the material responsible for the solubility switch. The results support decarboxylation of the ligands and subsequent radical-induced polymerization reactions in the thin film upon EUV irradiation. The rupture of carbon-fluorine bonds via dissociative electron attachment offers a parallel way of generating radicals. The mechanistic insights obtained here will be applicable to other hybrid materials and potentially pave the way for the development of EUV materials with better performance.

UV and VUV-induced fragmentation of tin-oxo cage ions

Photoresist materials are being optimized for the recently introduced Extreme Ultraviolet (EUV) photolithographic technology. Organometallic compounds are potential candidates for replacing the ubiquitous polymer-based chemically amplified resists. Tin (Sn) has a particularly large absorption cross section for EUV light (13.5 nm, 92 eV), which could lead to a lower required EUV dose for achieving the desired solubility change (improved sensitivity). However, the fundamental interaction between organometallic materials and higher energy photons is poorly understood. In this work, we exposed n-butyltin-oxo cage dications (M2+) in the gas phase to photons in the energy range 4-35 eV to explore their fundamental photoreactivity. Photoproducts were detected using mass spectrometry. Homolytic cleavage of tin-carbon bonds was observed for all photon energies above the onset of electronic absorption at ∼5 eV (∼250 nm), leading to photoproducts which have lost one or more of the attached butyl groups (Bu). Above 12 eV (<103 nm), dissociative photoionization occurred for the dication (M2+), competing with the neutral loss channels. The photoionization threshold is lowered by approximately 2 eV when one counterion (triflate, OTf- or tosylate, OTs-) is attached to the tin-oxo cage (MOTf+ and MOTs+). This threshold is expected to be even lower if each tin-oxo cage is attached to two counterions, as is the case in a solid film of tin-oxo cages. Addition of counterions also affected the fragmentation pathways; photoexcitation of (MX)+ (X = counterion, OTf or OTs) always led to formation of (MX-2Bu)+ rather than (MX-Bu)+. MOTs+ was much more reactive than MOTf+ in terms of reaction products per absorbed photon. A possible explanation for this is proposed, which involves the counterion reacting with the initially formed tin-based radical.

Role of low-energy electrons in the solubility switch of Zn-based oxocluster photoresist for extreme ultraviolet lithography

The electron-induced chemistry of a resist material for extreme ultraviolet lithography (EUVL) consisting of Zn oxoclusters with methacrylate (MA) and trifluoroacetate (TFA) ligands (Zn(MA)(TFA)) has been studied. Electron energies of 80 eV and 20 eV mimic the effect of photoelectrons released by the absorption of EUV photons and low-energy secondary electrons (LESEs) produced by those photoelectrons. The chemical conversion of the resist is studied by mass spectrometry to monitor the volatile species that desorb during electron irradiation, combined with reflection absorption infrared spectra (RAIRS) measured before and after irradiation. The observed reactions are closely related to those initiated upon EUV absorption. Also, the conversion of the Zn(MA)(TFA) resist layer that is required in EUVL is achieved by a similar energy input upon electron irradiation. The dominant component of the desorbing gas is CO2, but CO detection also suggests Zn oxide formation during electron irradiation. In contrast, species deriving from the ligand side chains predominantly remain within the resist layer. RAIRS gives direct evidence that, during electron irradiation, C[double bond, length as m-dash]C bonds of the MA ligands are more rapidly consumed than the carboxylate groups. This supports that chain reactions occur and contribute to the solubility switch in the resist in EUVL. Remarkably, 20 eV electrons still evolve roughly 50% of the amount of the gas that is observed at 80 eV for the same electron dose. The present results thus provide complementary and new insight to the EUV-induced chemistry in the Zn(MA)(TFA) resist and point towards the important contribution of low-energy electrons therein.