Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

Insights from Experiment and Theory on Peculiarities of the Electronic Structure and Optical Properties of the Tl2HgGeSe4 Crystal

Tl2HgGeSe4 crystal was successfully, for the first time, synthesized by the Bridgman-Stockbarger technology, and its electronic structure and peculiarities of optical constants were investigated using both experimental and theoretical techniques. The present X-ray photoelectron spectroscopy measurements show that the Tl2HgGeSe4 crystal reveals small moisture sensitivity at ambient conditions and that the essential covalent constituent of the chemical bonding characterizes it. The latter suggestion was supported theoretically by ab initio calculations. The present experiments feature that the Tl2HgGeSe4 crystal is a high-resistance semiconductor with a specific electrical conductivity of σ ∼ 10-8 Ω-1 cm-1 (at 300 K). The crystal is characterized by p-type electroconductivity with an indirect energy band gap of 1.28 eV at room temperature. It was established that a good agreement with the experiments could be obtained when performing first-principles calculations using the modified Becke-Johnson functional as refined by Tran-Blaha with additional involvement in the calculating procedure of the Hubbard amendment parameter U and the impact of spin-orbit coupling (TB-mBJ + U + SO model). Under such a theoretical model, we have determined that the energy band gap of the Tl2HgGeSe4 crystal is equal to 1.114 eV, and this band gap is indirect in nature. The optical constants of Tl2HgGeSe4 are calculated based on the TB-mBJ + U + SO model.

AInSn2S6 (A = K, Rb, Cs)─Layered Semiconductors Based on the SnS2 Structure

RbInSn₂S₆ and CsInSn₂S₆ are yellow two-dimensional (2D) semiconductors featuring anionic SnS₂-type layers of edge-sharing (In/Sn)S₆ octahedra. These structures are directly derived from the parent structure of SnS₂ by replacement of Sn⁴⁺ atoms with A⁺ and In³⁺ atoms. The compounds crystallize, isotypic to the ion-exchange material KInSn₂S₆. They adopt the triclinic space group R3̅m (no. 166). The compounds have similar indirect optical band gaps of 2.31(5) eV for Rb and 2.47(5) eV Cs. The measured work functions for each material are ∼5.38 eV. The density functional theory-calculated effective mass values exhibit strong anisotropy due to the 2D nature of the crystal structures and in the case of CsInSn₂S₆ for hole carriers along the a, b, and c crystallographic directions are 0.30 m₀, 0.34 m₀, and 2.54 m₀, respectively, while for electrons are 0.06 m₀, 0.07 m₀, and 0.47 m₀, respectively.

The Investigation on Mid-Far Infrared Nonlinear Crystal AgGaGe5Se12 (AGGSe)

3–5, 8–14 μm mid-far infrared (MF-IR) coherent lights generated by nonlinear optical (NLO) crystals are crucial for many industrial and military applications. AgGaGe5Se12 (AGGSe) is a promising NLO candidate because of its good optical performance. In this paper, the large AGGSe single crystal of 35 mm diameter and 80 mm length was obtained by the seed-aided Bridgman method. The crystalline quality was characterized with X-ray diffraction, rocking curve, transmission spectrum. The FWHM of the (210) peak was about 0.05° and the IR transmission was about 60% (1–10 μm, 6 mm thick). Additionally, it performed well in 8 μm frequency doubling, with a maximum output power of about 41 mW, corresponding to an optical-to-optical conversion efficiency of 3.2%. The laser induced damage threshold (LIDT) value was about 200 MW/cm2 (1.06 μm, 20 ns, 1 Hz).