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Zhang H, Li M, Mi SB, Cheng SD, Lu L, Chen ZG. Electron beam lithography of GeTe through polymorphic phase transformation. NANOSCALE HORIZONS 2024; 9:1574-1581. [PMID: 39034818 DOI: 10.1039/d4nh00035h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/23/2024]
Abstract
We report two previously undiscovered phases of GeTe including the sphalerite (c-) phase and the hexagonal (h-) phase with interlayer van der Waals gaps. A polymorphic phase transformation from rhombohedral α-GeTe to c- and h-GeTe at near room temperature is first realized via electron beam irradiation. Their underlying thermodynamics and kinetics are illustrated using the in situ heating experiments and molecular dynamics simulations. Density-functional theory calculations indicate that c-GeTe exhibits typical metallic behavior and h-GeTe is a narrow-gap semiconductor with a strong spin-orbital coupling effect. Our findings shed light on a strategy for designing GeTe-based quantum devices compromising nanopillars and heterostructures via an atomic-scale electron beam lithography technique.
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Affiliation(s)
- Hu Zhang
- Ji Hua Laboratory, Foshan 528200, China.
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an 710119, China
- State Key Laboratory for Mechanical Behavior of Materials & School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China
| | - Meng Li
- School of Chemistry & Physics, Faculty of Science, Queensland University of Technology, Queensland 4000, Australia.
| | - Shao-Bo Mi
- Ji Hua Laboratory, Foshan 528200, China.
| | - Shao-Dong Cheng
- State Key Laboratory for Mechanical Behavior of Materials & School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China
| | - Lu Lu
- Ji Hua Laboratory, Foshan 528200, China.
| | - Zhi-Gang Chen
- School of Chemistry & Physics, Faculty of Science, Queensland University of Technology, Queensland 4000, Australia.
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2
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Krizman G, Zakusylo T, Sajeev L, Hajlaoui M, Takashiro T, Rosmus M, Olszowska N, Kołodziej JJ, Bauer G, Caha O, Springholz G. A Novel Ferroelectric Rashba Semiconductor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2310278. [PMID: 38100676 DOI: 10.1002/adma.202310278] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Revised: 12/08/2023] [Indexed: 12/17/2023]
Abstract
Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the Rashba-type spin texture by means of the reversible and switchable polarization. Yet, only very few materials are established to belong to this class of multifunctional materials. Here, Pb1- x Gex Te is unraveled as a novel FERSC system down to nanoscale. The ferroelectric phase transition and concomitant lattice distortion are demonstrated by temperature dependent X-ray diffraction, and their effect on electronic properties are measured by angle-resolved photoemission spectroscopy. In few nanometer-thick epitaxial heterostructures, a large Rashba spin-splitting is exhibiting a wide tuning range as a function of temperature and Ge content. This work defines Pb1- x Gex Te as a high-potential FERSC system for spintronic applications.
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Affiliation(s)
- Gauthier Krizman
- Institut für Halbleiter und Festkörperphysik, Johannes Kepler Universität, Altenberger Strasse 69, Linz, 4040, Austria
| | - Tetiana Zakusylo
- Institut für Halbleiter und Festkörperphysik, Johannes Kepler Universität, Altenberger Strasse 69, Linz, 4040, Austria
| | - Lakshmi Sajeev
- Department of Condensed Matter Physics, Masaryk University, Kotlárská 2, Brno, 61137, Czech Republic
| | - Mahdi Hajlaoui
- Institut für Halbleiter und Festkörperphysik, Johannes Kepler Universität, Altenberger Strasse 69, Linz, 4040, Austria
| | - Takuya Takashiro
- Institut für Halbleiter und Festkörperphysik, Johannes Kepler Universität, Altenberger Strasse 69, Linz, 4040, Austria
| | - Marcin Rosmus
- National Synchrotron Radiation Centre SOLARIS, Jagiellonian University, Czerwone Maki 98, Krakow, 30-392, Poland
| | - Natalia Olszowska
- National Synchrotron Radiation Centre SOLARIS, Jagiellonian University, Czerwone Maki 98, Krakow, 30-392, Poland
| | - Jacek J Kołodziej
- National Synchrotron Radiation Centre SOLARIS, Jagiellonian University, Czerwone Maki 98, Krakow, 30-392, Poland
- Faculty of Physics, Astronomy and Applied Computer Science, Jagiellonian University, Ul. Prof. Stanislawa Lojasiewizca 11, Krakow, 30-348, Poland
| | - Günther Bauer
- Institut für Halbleiter und Festkörperphysik, Johannes Kepler Universität, Altenberger Strasse 69, Linz, 4040, Austria
| | - Ondrej Caha
- Department of Condensed Matter Physics, Masaryk University, Kotlárská 2, Brno, 61137, Czech Republic
| | - Gunther Springholz
- Institut für Halbleiter und Festkörperphysik, Johannes Kepler Universität, Altenberger Strasse 69, Linz, 4040, Austria
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3
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Li Y, Ran Z, Huang C, Wang G, Shen P, Huang H, Xu C, Liu Y, Jiao W, Jiang W, Hu J, Zhu G, Xu C, Lu Q, Wang G, Jing Q, Wang S, Shi Z, Jia J, Xu X, Zhang W, Luo W, Qian D. Coexistence of Ferroelectriclike Polarization and Dirac-like Surface State in TaNiTe_{5}. PHYSICAL REVIEW LETTERS 2022; 128:106802. [PMID: 35333064 DOI: 10.1103/physrevlett.128.106802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2021] [Revised: 01/12/2022] [Accepted: 02/10/2022] [Indexed: 06/14/2023]
Abstract
By combining angle-resolved photoemission spectroscopy, scanning tunneling microscopy, atomic force microscope based piezoresponse force microscopy and first-principles calculations, we have studied the low-energy band structure, atomic structure, and charge polarization on the surface of a topological semimetal candidate TaNiTe_{5}. Dirac-like surface states were observed on the (010) surface by angle-resolved photoemission spectroscopy, consistent with the first-principles calculations. On the other hand, piezoresponse force microscopy reveals a switchable ferroelectriclike polarization on the same surface. We propose that the noncentrosymmetric surface relaxation observed by scanning tunneling microscopy could be the origin of the observed ferroelectriclike state in this novel material. Our findings provide a new platform with the coexistence of a ferroelectriclike surface charge distribution and novel surface states.
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Affiliation(s)
- Yunlong Li
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Zhao Ran
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Chaozhi Huang
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Guanyong Wang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Peiyue Shen
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Haili Huang
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Chunqiang Xu
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China
| | - Yi Liu
- Key Laboratory of Quantum Precision Measurement of Zhejiang Province, Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China
| | - Wenhe Jiao
- Key Laboratory of Quantum Precision Measurement of Zhejiang Province, Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China
| | - Wenxiang Jiang
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jiayuan Hu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Gucheng Zhu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Chenhang Xu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Qi Lu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Guohua Wang
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Qiang Jing
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Shiyong Wang
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Zhiwen Shi
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jinfeng Jia
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xiaofeng Xu
- Key Laboratory of Quantum Precision Measurement of Zhejiang Province, Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China
| | - Wentao Zhang
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Weidong Luo
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Dong Qian
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China
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4
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Krempaský J, Nicolaï L, Gmitra M, Chen H, Fanciulli M, Guedes EB, Caputo M, Radović M, Volobuev VV, Caha O, Springholz G, Minár J, Dil JH. Triple-Point Fermions in Ferroelectric GeTe. PHYSICAL REVIEW LETTERS 2021; 126:206403. [PMID: 34110214 DOI: 10.1103/physrevlett.126.206403] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2020] [Revised: 02/16/2021] [Accepted: 04/08/2021] [Indexed: 06/12/2023]
Abstract
Ferroelectric α-GeTe is unveiled to exhibit an intriguing multiple nontrivial topology of the electronic band structure due to the existence of triple-point and type-II Weyl fermions, which goes well beyond the giant Rashba spin splitting controlled by external fields as previously reported. Using spin- and angle-resolved photoemission spectroscopy combined with ab initio density functional theory, the unique spin texture around the triple point caused by the crossing of one spin-degenerate and two spin-split bands along the ferroelectric crystal axis is derived. This consistently reveals spin winding numbers that are coupled with time-reversal symmetry and Lorentz invariance, which are found to be equal for both triple-point pairs in the Brillouin zone. The rich manifold of effects opens up promising perspectives for studying nontrivial phenomena and multicomponent fermions in condensed matter systems.
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Affiliation(s)
- Juraj Krempaský
- Photon Science Division, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
| | - Laurent Nicolaï
- New Technologies-Research Center, University of West Bohemia, 301 00 Plzeň 3, Czech Republic
| | - Martin Gmitra
- Institute of Physics, P. J. Šafárik University in Košice, Park Angelinum 9, 040 01 Košice, Slovakia
| | - Houke Chen
- Department of Physics, Tsinghua University, Beijing 100084, China
| | - Mauro Fanciulli
- Laboratoire de Physique des Matériaux et Surfaces, CY Cergy Paris Université, 95031 Cergy-Pontoise, France
| | - Eduardo B Guedes
- Photon Science Division, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
| | - Marco Caputo
- Photon Science Division, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
| | - Milan Radović
- Photon Science Division, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
| | - Valentine V Volobuev
- International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland
- National Technical University "KhPI", Kyrpychova Street 2, 61002 Kharkiv, Ukraine
| | - Ondřej Caha
- Department of Condensed Matter Physics, Masaryk University, Kotlářská 267/2, 61137 Brno, Czech Republic
| | - Gunther Springholz
- Institut für Halbleiter-und Festkörperphysik, Johannes Kepler Universität, A-4040 Linz, Austria
| | - Jan Minár
- New Technologies-Research Center, University of West Bohemia, 301 00 Plzeň 3, Czech Republic
| | - J Hugo Dil
- Photon Science Division, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
- Institut de Physique, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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