Ferroelectric Domain Structure and Local Piezoelectric Properties of Lead-Free (Ka0.5Na0.5)NbO₃ and BiFeO₃-Based Piezoelectric Ceramics

Understanding the depolarization phenomena in (1-x) Na0.5Bi0.5TiO3. (x) Ba0.85Ca0.15Ti0.90Zr0.10O3solid solutions usingin-situtemperature dependent Raman spectroscopy

A decrease in depolarization temperature (Td) from 456 K to 352 K was observed with an increase in BCZT substitution in the NBT for the (1-x) Na0.5Bi0.5TiO3. (x) Ba0.85Ca0.15Ti0.90Zr0.10O3solid solutions. A transition towards a higher ergodic state was elucidated with an increase in BCZT content that helped to reduce the free energy barrier, hence lesser thermal energy was required to depolarize the modified systems. Furthermore, a decrease in remnant polarization and coercive field, coupled with an increase in energy storage (Wstored) and efficiency (η%) with higher BCZT content.In-situtemperature-dependent Raman spectra provide additional insights, highlighting the faster changes in phonon shifts and lifetimes corresponding to the A-O, B-O, and BO6vibrations around the depolarization temperature (Td). The observed phase transformation to aP4bm phase at temperatures significantly higher thanTdis substantiated by Raman shift and phonon lifetime variations in the modes associated with the A-O and B-O vibrations. The transitions can be understood as: atT∼Tdthe polar nano regions (PNRs) start to appear due to weakening of bonds,T>Tdall the long-range ferroelectric domains transform to PNRs converting the material to a fully ergodic state, and at much higher temperatures (T≫Td) theR3c PNRs vanish andP4bm PNRs appear.

Exploring the BiFeO3-PbTiO3-SrTiO3 Ternary System to Obtain Good Piezoelectrical Properties at Low and High Temperatures

In this work, we investigated the piezoelectric properties of BiFeO3-rich (1 - (y + x)) BiFeO3-y PbTiO3-x SrTiO3 (0.1 ≤ x ≤ 0.35; 0.1 ≤ y ≤ 0.3) bulk piezoceramics, as this system could potentially lead to the development of bulk piezoelectric ceramics that are suitable for high-temperature applications (>200 °C). Samples with various levels of PbTiO3 and SrTiO3 were prepared via a conventional solid-state route. X-ray diffraction confirmed a pure perovskite phase for the compositions, which was explored without secondary phases. It was found that the addition of comparable levels of PbTiO3 and SrTiO3 to the BiFeO3 ceramic resulted in higher piezoelectric properties compared to those of the pure BiFeO3 and binary systems. The Curie temperature was significantly reduced by dual doping, with SrTiO3 and PbTiO3 additions resulting in comparable Curie temperature depressions. The locations of the phase boundaries between the cubic, pseudocubic, and rhombohedral crystal structures were determined. The highest piezoelectric properties, including a d33 value of 250 pC/N at room temperature, were obtained for the samples with the composition x = 0.3, y = 0.25, which was close to the cubic-pseudocubic phase boundary in the phase diagram. The temperature dependence of the piezoelectric properties varied depending on the previous thermal history, yet an appropriate heat treatment resulted in an almost temperature-stable d33 value. The ceramic with the lowest temperature sensitivity and a high Curie temperature of 350 °C was found for x = 0.1, y = 0.2 with a d33 value of 60 pC/N at RT and 71 pC/N at 300 °C (after poling at 60 kV/cm and a stabilizing heat treatment). However, the materials developed were still unsuitable for applications at high temperatures due to a rapidly increasing electrical conductivity with increasing temperature.

Flash Sintered Potassium Sodium Niobate: High-Performance Piezoelectric Ceramics at Low Thermal Budget Processing

Alternative sintering technologies promise to overcome issues associated with conventional ceramic sintering such as high thermal budgets and CO₂ footprint. The sintering process becomes even more relevant for alkali-based piezoelectric ceramics such as K_0.5Na_0.5NbO₃ (KNN) typically fired above 1100 °C for several hours that induces secondary phase formation and, thereby, degrades their electrical characteristics. Here, an ability of KNN ceramics to be of high performance is successfully demonstrated, using an electric field- and current-assisted Flash sintering technique at 900 °C only. Reported for the first time, Flash sintered KNN ceramics have room-temperature remnant polarization P_r = 21 μC/cm² and longitudinal piezoelectric coefficient d₃₃ = 117 pC/N, slightly superior to that of conventional ones due to the reduced content of secondary phases. High-performance KNN ceramics Flash sintered at a low-thermal budget have implications for the development of innovative low carbon technologies, electroceramics stakeholders, and piezoelectric energy harvesters.

Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy

Monitoring the charged defect concentration at the nanoscale is of critical importance for both the fundamental science and applications of ferroelectrics. However, up-to-date, high-resolution study methods for the investigation of structural defects, such as transmission electron microscopy, X-ray tomography, etc., are expensive and demand complicated sample preparation. With an example of the lanthanum-doped bismuth ferrite ceramics, a novel method is proposed based on the switching spectroscopy piezoresponse force microscopy (SSPFM) that allows probing the electric potential from buried subsurface charged defects in the ferroelectric materials with a nanometer-scale spatial resolution. When compared with the composition-sensitive methods, such as neutron diffraction, X-ray photoelectron spectroscopy, and local time-of-flight secondary ion mass spectrometry, the SSPFM sensitivity to the variation of the electric potential from the charged defects is shown to be equivalent to less than 0.3 at% of the defect concentration. Additionally, the possibility to locally evaluate dynamics of the polarization screening caused by the charged defects is demonstrated, which is of significant interest for further understanding defect-mediated processes in ferroelectrics.

Study of domain configurations in (Bi,Na)ZrO3-modified (K,Na)(Nb,Sb)O3 piezoelectric ceramics by acid-etching at different temperatures

Domain structure often greatly affects piezoelectric performance of a ferroelectric ceramic. Accordingly, a convenient method that can well characterize the domain structure at various temperatures is highly desired for understanding the underlying mechanism. An improved acid-etching technique was recently developed for such purpose. Domain structure of poled 0.96(K0.48Na0.52)(Nb0.96Sb0.04)O3-0.04(Bi0.50Na0.50)ZrO3 ceramics with a large piezoelectric coefficient d33 of 535 pC/N was systematically investigated at three typical temperatures. It was found that domain configurations change significantly with temperature. Hierarchical nanodomain structure is widely observed in domain patterns acid-etched at 25 °C, due to the orthorhombic-tetragonal phase coexistence. By contrast, the majority part of those acid-etched at - 60 °C are simply some long parallel stripes, while a small amount of banded structure appears in broad stripes inside some grains. A nearly 63° intersectional angle is seen between two adjacent sets of parallel stripes in the domain pattern of a cuboid-shaped grain, indicating that orthorhombic phase remains down to - 60 °C. The domain patterns acid-etched at 80 °C become even simpler, mainly consisting of long parallel stripes that are several hundred nanometers wide and have quite straight edges. Fundamental issues associating with the possible domain configurations and the acid-etching were discussed on the simple mathematical basis.

Chemical Uniformity in Ferroelectric K x Na1- x NbO3 Thin Films

Potassium sodium niobate (KNN) has long been considered a viable candidate for replacing lead-based materials in piezo- and ferroelectric devices. The introduction of KNN on an industrial scale is highly awaited; however, processing challenges still remain to be solved. The main obstacle is lack of reproducible growth of uniform boules or thin films at temperatures that facilitate monolithic device integration. Herein, atomic layer deposition (ALD) of KNN thin films, exhibiting high chemical uniformity over large areas, is reported. The cation composition can be controlled at a 1% level, enabling fine-tuning of the film stoichiometry across the morphotropic phase boundaries of the KNbO3-NaNbO3 solid solution. The films are obtained as highly oriented on Pt (111)||Si (100)-substrates after annealing at temperatures as low as 550 °C. They exhibit converse piezoelectric effects with magnitudes in accordance with literature. It is believed that the successful development of the described ALD process represents a major step toward achieving lead-free piezo- and ferroelectrics on an industrial scale.

Thickness Dependence of Ferroelectric and Optical Properties in Pb(Zr0.53Ti0.47)O3 Thin Films

As a promising functional material, ferroelectric Pb(Zr_xTi_1−x)O₃ (PZT) are widely used in many optical and electronic devices. Remarkably, as the film thickness decreases, the materials’ properties deviate gradually from those of solid materials. In this work, multilayered PZT thin films with different thicknesses are fabricated by Sol-Gel technique. The thickness effect on its microstructure, ferroelectric, and optical properties has been studied. It is found that the surface quality and the crystalline structure vary with the film thickness. Moreover, the increasing film thickness results in a significant increase in remnant polarization, due to the interfacial layer effect. Meanwhile, the dielectric loss and tunability are strongly dependent on thickness. In terms of optical properties, the refractive index of PZT films increase with the increasing thickness, and the photorefractive effect are also influenced by the thickness, which could all be related to the film density and photovoltaic effect. Besides, the band gap decreases as the film thickness increases. This work is significant for the application of PZT thin film in optical and optoelectronic devices.