Organic Thin Film Transistors Incorporating Solution Processable Thieno[3,2-b]thiophene Thienoacenes

Towards the Bisbenzothienocarbazole Core: A Route of Sulfurated Carbazole Derivatives with Assorted Optoelectronic Properties and Applications

Ladder-type molecules, which possess an extended aromatic backbone, are particularly sought within the optoelectronic field. In view of the potential of the 14H-bis[1]benzothieno[3,2-b:2',3'-h]carbazole core as a p-type semiconductor, herein we studied a set of two derivatives featuring a different alkylation patterning. The followed synthetic route, involving various sulfurated carbazole-based molecules, also resulted in a source of fluorophores with different emitting behaviors. Surprisingly, the sulfoxide-containing fluorophores substantially increased their blue fluorescence with respect to the nearly non-emitting sulfur counterparts. On this basis, we could shed light on the relationship between their chemical structure and their emission as an approach for future applications. Considering the performance in organic thin-film transistors, both bisbenzothienocarbazole derivatives displayed p-type characteristics, with hole mobility values up to 1.1 × 10-3 cm2 V-1 s-1 and considerable air stability. Moreover, the role of the structural design has been correlated with the device performance by means of X-ray analysis and the elucidation of the corresponding single crystal structures.

Excess Polymer in Single-Walled Carbon Nanotube Thin-Film Transistors: Its Removal Prior to Fabrication Is Unnecessary

Ultrapure semiconducting single-walled carbon nanotube (sc-SWNT) dispersions produced through conjugated polymer sorting are ideal candidates for the fabrication of solution-processed organic electronic devices on a commercial scale. Protocols for sorting and dispersing ultrapure sc-SWNTs with conjugated polymers for thin-film transistor (TFT) applications have been well refined. Conventional wisdom dictates that removal of excess unbound polymer through filtration or centrifugation is necessary to produce high-performance TFTs. However, this is time-consuming, wasteful, and resource-intensive. In this report, we challenge this paradigm and demonstrate that excess unbound polymer during semiconductor film fabrication is not necessarily detrimental to device performance. Over 1200 TFT devices were fabricated from 30 unique polymer-sorted SWNT dispersions, prepared using two different alternating copolymers. Detailed Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) studies of the random-network semiconductor films demonstrated that a simple solvent rinse during TFT fabrication was sufficient to remove unbound polymer from the sc-SWNT films, thus eliminating laborious polymer removal before TFT fabrication. Furthermore, below a threshold polymer concentration, the presence of excess polymer during fabrication did not significantly impede TFT performance. Preeminent performance was achieved for devices prepared from native polymer-sorted SWNT dispersions containing the "original" amount of excess unbound polymer (immediately following enrichment). Lastly, we developed an open-source Machine Learning algorithm to quantitatively analyze AFM images of SWNT films for surface coverage, number of tubes, and tube alignment.

Air and temperature sensitivity of n-type polymer materials to meet and exceed the standard of N2200

N-type organic semiconductors are notoriously unstable in air, requiring the design of new materials that focuses on lowering their LUMO energy levels and enhancing their air stability in organic electronic devices such as organic thin-film transistors (OTFTs). Since the discovery of the notably air stable and high electron mobility polymer poly{[N,N'-bis (2-octyldodecyl)- naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,29-bisthiophene)} (N2200), it has become a popular n-type semiconductor, with numerous materials being designed to mimic its structure. Although N2200 itself is well-studied, many of these comparable materials have not been sufficiently characterized to compare their air stability to N2200. To further the development of air stable and high mobility n-type organic semiconductors, N2200 was studied in organic thin film transistors alongside three N2200-based analogues as well as a recently developed polymer based on a (3E,7E)-3,7-bis(2-oxoindolin-3-ylidene)benzo[1,2-b:4,5-b']difuran-2,6(3 H,7 H)-dione (IBDF) core. This IBDF polymer has demonstrated promising field-effect mobility and air stability in drop-cast OTFTs. While N2200 outperformed its analogues, the IBDF-based polymer displayed superior air and temperature stability compared to N2200. Overall, polymers with more heteroatoms displayed greater air stability. These findings will support the development of new air-stable materials, and further demonstrate the persistent need for the development of novel n-type semiconductors.

P and N type copper phthalocyanines as effective semiconductors in organic thin-film transistor based DNA biosensors at elevated temperatures

Many health-related diagnostics are expensive, time consuming and invasive. Organic thin film transistor (OTFT) based devices show promise to enable rapid, low cost diagnostics that are an important aspect to enabling increased access and availability to healthcare. Here, we describe OTFTs based upon two structurally similar P (copper phthalocyanine – CuPc) and N (hexdecafluoro copper phthalocyanine – F₁₆-CuPc) type semiconductor materials, and demonstrate their potential for use as both temperature and DNA sensors. Bottom gate bottom contact (BGBC) OTFTs with either CuPc or F₁₆-CuPc semiconducting layers were characterized within a temperature range of 25 °C to 90 °C in both air and under vacuum. CuPc devices showed small positive shifts in threshold voltage (V_T) in air and significant linear increases in mobility with increasing temperature. F₁₆-CuPc devices showed large negative shifts in V_T in air and linear increases in mobility under the same conditions. Similar OTFTs were exposed to DNA in different hybridization states and both series of devices showed positive V_T increases upon DNA exposure, with a larger response to single stranded DNA. The N-type F₁₆-CuPc devices showed a much greater sensing response than the P-type CuPc. These findings illustrate the use of these materials, especially the N-type semiconductor, as both temperature and DNA sensors and further elucidate the mechanism of DNA sensing in OTFTs.

This study illustrates the use of an N-type semiconductor, in both temperature and DNA sensors and further elucidates the mechanism of DNA sensing in OTFTs.