1
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Kalt RA, Arcifa A, Wäckerlin C, Stemmer A. CVD of MoS 2 single layer flakes using Na 2MoO 4 - impact of oxygen and temperature-time-profile. NANOSCALE 2023; 15:18871-18882. [PMID: 37969003 PMCID: PMC10690930 DOI: 10.1039/d3nr03907b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/04/2023] [Accepted: 10/31/2023] [Indexed: 11/17/2023]
Abstract
Two-dimensional (2D) materials are of great interest in many fields due to their astonishing properties at an atomic level thickness. Many fundamentally different methods to synthesize 2D materials, such as exfoliation or chemical vapor deposition (CVD), have been reported. Despite great efforts and progress to investigate and improve each synthesis method, mainly to increase the yield and quality of the synthesized 2D materials, most approaches still involve some compromise. Herein, we systematically investigate a chemical vapor deposition (CVD) process to synthesize molybdenum disulfide (MoS2) single layer flakes using sodium molybdate (Na2MoO4), deposited on a silica (SiO2/Si) substrate by spin-coating its aqueous solution, as the molybdenum source and sulfur powder as sulfur source, respectively. The focus lies on the impact of oxygen (O2) in the gas flow and temperature-time-profile on reaction process and product quality. Atomic force microscopy (AFM), Raman and photoluminescence (PL) spectroscopy, X-ray photoelectron spectroscopy (XPS), and time-of-flight secondary ion mass spectrometry (ToF-SIMS) were used to investigate MoS2 flakes synthesized under different exposure times of O2 and with various temperature-time-profiles. This detailed study shows that the MoS2 flakes are formed within the first few minutes of synthesis and elaborates on the necessity of O2 in the gas flow, as well as drawbacks of its presence. In addition, the applied temperature-time-profile highly affects the ability to detach MoS2 flakes from the growth substrate when immersed in water, but it has no impact on the flake.
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Affiliation(s)
- Romana Alice Kalt
- Nanotechnology Group, ETH Zürich, Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland.
| | - Andrea Arcifa
- Surface Science & Coating Technologies, Swiss Federal Laboratories for Materials Science and Technology (EMPA), Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Christian Wäckerlin
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Station 3, CH-1015 Lausanne, Switzerland
- Laboratory for X-ray Nanoscience and Technologies, Paul-Scherrer-Institute (PSI), CH-5232 Villigen PSI, Switzerland
| | - Andreas Stemmer
- Nanotechnology Group, ETH Zürich, Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland.
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2
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Germaine IM, Huttel MB, Alderman MP, McElwee-White L. Aerosol-Assisted Chemical Vapor Deposition of MoS 2 with a Thiourea Sulfur Source: Single-Source Precursors vs Coreactant Mixtures. ACS APPLIED MATERIALS & INTERFACES 2023; 15:37764-37774. [PMID: 37493647 DOI: 10.1021/acsami.3c04086] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
Aerosol-assisted chemical vapor deposition of MoS2 from solutions containing the single-source precursors cis-Mo(CO)4(TMTU)2 and Mo(CO)5(TMTU) in toluene was compared to depositions from the coreactant solution containing Mo(CO)6 and uncoordinated TMTU in toluene. The results were used to assess the significance of ligand precoordination on the properties of the deposited films. Raman spectra and GI-XRD patterns of the films show that the single-source precursors produced more intense and sharper signals for 2H-MoS2 as compared to the coreactant system of Mo(CO)6 and TMTU, which is indicative of improved crystallinity. SEM and XPS were also used to assess morphology and film composition. Thermolysis of cis-Mo(CO)4(TMTU)2 and analysis of the pyrolysis products by GC-MS and 1H NMR suggested a decomposition mechanism of the TMTU ligand where a terminal sulfido is generated on the molybdenum center with loss of a heteroatom stabilized carbene.
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Affiliation(s)
- Ian M Germaine
- Department of Chemistry, University of Florida, Gainesville, Florida 32611-7200, United States
| | - Mary B Huttel
- Department of Chemistry, University of Florida, Gainesville, Florida 32611-7200, United States
| | - Molly P Alderman
- Department of Chemistry, University of Florida, Gainesville, Florida 32611-7200, United States
| | - Lisa McElwee-White
- Department of Chemistry, University of Florida, Gainesville, Florida 32611-7200, United States
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3
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Somphonsane R, Chiawchan T, Bootsa-ard W, Ramamoorthy H. CVD Synthesis of MoS 2 Using a Direct MoO 2 Precursor: A Study on the Effects of Growth Temperature on Precursor Diffusion and Morphology Evolutions. MATERIALS (BASEL, SWITZERLAND) 2023; 16:4817. [PMID: 37445130 PMCID: PMC10343541 DOI: 10.3390/ma16134817] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2023] [Revised: 06/29/2023] [Accepted: 07/01/2023] [Indexed: 07/15/2023]
Abstract
In this study, the influence of growth temperature variation on the synthesis of MoS2 using a direct MoO2 precursor was investigated. The research showed that the growth temperature had a strong impact on the resulting morphologies. Below 650 °C, no nucleation or growth of MoS2 occurred. The optimal growth temperature for producing continuous MoS2 films without intermediate-state formation was approximately 760 °C. However, when the growth temperatures exceeded 800 °C, a transition from pure MoS2 to predominantly intermediate states was observed. This was attributed to enhanced diffusion of the precursor at higher temperatures, which reduced the local S:Mo ratio. The diffusion equation was analyzed, showing how the diffusion coefficient, diffusion length, and concentration gradients varied with temperature, consistent with the experimental observations. This study also investigated the impact of increasing the MoO2 precursor amount, resulting in the formation of multilayer MoS2 domains at the outermost growth zones. These findings provide valuable insights into the growth criteria for the effective synthesis of clean and large-area MoS2, thereby facilitating its application in semiconductors and related industries.
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Affiliation(s)
- Ratchanok Somphonsane
- Department of Physics, School of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand; (R.S.); (T.C.); (W.B.-a.)
- Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400, Thailand
| | - Tinna Chiawchan
- Department of Physics, School of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand; (R.S.); (T.C.); (W.B.-a.)
| | - Waraporn Bootsa-ard
- Department of Physics, School of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand; (R.S.); (T.C.); (W.B.-a.)
| | - Harihara Ramamoorthy
- Department of Electronics Engineering, School of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand
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4
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Mouloua D, Lejeune M, Rajput NS, Kaja K, El Marssi M, El Khakani MA, Jouiad M. One-step chemically vapor deposited hybrid 1T-MoS 2/2H-MoS 2 heterostructures towards methylene blue photodegradation. ULTRASONICS SONOCHEMISTRY 2023; 95:106381. [PMID: 37004414 PMCID: PMC10457596 DOI: 10.1016/j.ultsonch.2023.106381] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/31/2023] [Revised: 03/11/2023] [Accepted: 03/22/2023] [Indexed: 06/19/2023]
Abstract
The photocatalytic degradation of methylene blue is a straightforward and cost-effective solution for water decontamination. Although many materials have been reported so far for this purpose, the proposed solutions inflicted high fabrication costs and low efficiencies. Here, we report on the synthesis of tetragonal (1T) and hexagonal (2H) mixed molybdenum disulfide (MoS2) heterostructures for an improved photocatalytic degradation efficiency by means of a single-step chemical vapor deposition (CVD) technique. We demonstrate that the 1T-MoS2/2H-MoS2 heterostructures exhibited a narrow bandgap ∼ 1.7 eV, and a very low reflectance (<5%) under visible-light, owing to their particular vertical micro-flower-like structure. We exfoliated the CVD-synthesised 1T-MoS2/2H-MoS2 films to assess their photodegradation properties towards the standard methylene blue dye. Our results showed that the photo-degradation rate-constant of the 1T-MoS2/2H-MoS2 heterostructures is much greater under UV excitation (i.e., 12.5 × 10-3 min-1) than under visible light illumination (i.e., 9.2 × 10-3 min-1). Our findings suggested that the intermixing of the conductive 1T-MoS2 with the semi-conducting 2H-MoS2 phases favors the photogeneration of electron-hole pairs. More importantly, it promotes a higher efficient charge transfer, which accelerates the methylene blue photodegradation process.
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Affiliation(s)
- D Mouloua
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, Scientific Pole, 33 rue Saint-Leu, 80039 Amiens Cedex 1, France; Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650, Blvd, Lionel-Boulet, Varennes, QC J3X-1P7, Canada
| | - M Lejeune
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, Scientific Pole, 33 rue Saint-Leu, 80039 Amiens Cedex 1, France
| | - N S Rajput
- Advanced Materials Research Center, Technology Innovation Institute, P.O. Box 9639, Abu Dhabi, United Arab Emirates
| | - K Kaja
- Laboratoire National de métrologie et d'essais (LNE), 29 av. Roger Hennequin, 78197 Trappes, France
| | - M El Marssi
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, Scientific Pole, 33 rue Saint-Leu, 80039 Amiens Cedex 1, France
| | - M A El Khakani
- Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650, Blvd, Lionel-Boulet, Varennes, QC J3X-1P7, Canada.
| | - M Jouiad
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, Scientific Pole, 33 rue Saint-Leu, 80039 Amiens Cedex 1, France.
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5
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Wang QB, Xu QQ, Yang MZ, Wu ZS, Xia XC, Yin JZ, Han ZH. Vapor-Liquid-Solid Growth of Site-Controlled Monolayer MoS 2 Films Via Pressure-Induc ed Supercritical Phase Nucleation. ACS APPLIED MATERIALS & INTERFACES 2023; 15:17396-17405. [PMID: 36950967 DOI: 10.1021/acsami.3c01407] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In this study, a novel pressure-induced supercritical phase nucleation method is proposed to synthesize monolayer MoS2 films, which is promoter free and can avoid contamination of films derived from these heterogeneous promoters in most of the existing techniques. The low-crystallinity and size-controlled MoO2(acac)2 particles are recrystallized on the substrate via the pressure-sensitive solvent capacity of supercritical CO2 and these particles are used as growth sites. The size of single-crystal MoS2 on the substrate is found to be dependent on the wetting area of the pyrolyzed precursor droplets (MoO2) on the surface, and the formation of continuous films with high coverage is mainly controlled by the coalescence of MoO2 droplets. It is enhanced by the increase of the nucleation site density, which can be adjusted by the supersaturation of the supercritical fluid solution. Our findings pave a new way for the controllable growth of MoS2 and other two-dimensional materials and provide sufficient and valuable evidence for vapor-liquid-solid growth.
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Affiliation(s)
- Qi-Bo Wang
- State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, 2 Ling Gong Road, 116024 Dalian, China
| | - Qin-Qin Xu
- State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, 2 Ling Gong Road, 116024 Dalian, China
| | - Ming-Zhe Yang
- State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, 2 Ling Gong Road, 116024 Dalian, China
| | - Zhong-Shuai Wu
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, 116024 Dalian, China
| | - Xiao-Chuan Xia
- School of Physics & School of Microelectronics, Dalian University of Technology, 2 Ling Gong Road, 116024 Dalian, China
| | - Jian-Zhong Yin
- State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, 2 Ling Gong Road, 116024 Dalian, China
| | - Zhen-Hua Han
- State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, 2 Ling Gong Road, 116024 Dalian, China
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6
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R. R, Prasannakumar AT, Mohan RR, V. M, Varma SJ. Advances in 2D Molybdenum Disulfide‐Based Functional Materials for Supercapacitor Applications. ChemistrySelect 2022. [DOI: 10.1002/slct.202203068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Rohith. R.
- Materials for Energy Storage and Optoelectronic Devices Group Department of Physics Sanatana Dharma College University of Kerala Alappuzha Kerala 688003 India
- Research Centre University of Kerala Thiruvananthapuram Kerala 695034 India
| | - Anandhu Thejas Prasannakumar
- Materials for Energy Storage and Optoelectronic Devices Group Department of Physics Sanatana Dharma College University of Kerala Alappuzha Kerala 688003 India
- Research Centre University of Kerala Thiruvananthapuram Kerala 695034 India
| | - Ranjini R. Mohan
- Division for Research in Advanced Materials Department of Physics Cochin University of Science and Technology Kochi Kerala 688022 India
| | - Manju. V.
- Materials for Energy Storage and Optoelectronic Devices Group Department of Physics Sanatana Dharma College University of Kerala Alappuzha Kerala 688003 India
- Research Centre University of Kerala Thiruvananthapuram Kerala 695034 India
| | - Sreekanth J. Varma
- Materials for Energy Storage and Optoelectronic Devices Group Department of Physics Sanatana Dharma College University of Kerala Alappuzha Kerala 688003 India
- Research Centre University of Kerala Thiruvananthapuram Kerala 695034 India
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7
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Vizza M, Giurlani W, Cerri L, Calisi N, Leonardi AA, Faro MJL, Irrera A, Berretti E, Perales-Rondón JV, Colina A, Bujedo Saiz E, Innocenti M. Electrodeposition of Molybdenum Disulfide (MoS2) Nanoparticles on Monocrystalline Silicon. Molecules 2022; 27:molecules27175416. [PMID: 36080184 PMCID: PMC9458112 DOI: 10.3390/molecules27175416] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/22/2022] [Revised: 08/19/2022] [Accepted: 08/20/2022] [Indexed: 11/16/2022] Open
Abstract
Molybdenum disulfide (MoS2) has attracted great attention for its unique chemical and physical properties. The applications of this transition metal dichalcogenide (TMDC) range from supercapacitors to dye-sensitized solar cells, Li-ion batteries and catalysis. This work opens new routes toward the use of electrodeposition as an easy, scalable and cost-effective technique to perform the coupling of Si with molybdenum disulfide. MoS2 deposits were obtained on n-Si (100) electrodes by electrochemical deposition protocols working at room temperature and pressure, as opposed to the traditional vacuum-based techniques. The samples were characterized by X-ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and Rutherford Back Scattering (RBS).
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Affiliation(s)
- Martina Vizza
- Dipartimento di Chimica, Università degli Studi di Firenze, Via della Lastruccia 3, 50019 Sesto Fiorentino, Italy
- Correspondence: (M.V.); (M.I.)
| | - Walter Giurlani
- Dipartimento di Chimica, Università degli Studi di Firenze, Via della Lastruccia 3, 50019 Sesto Fiorentino, Italy
- INSTM, Consorzio Interuniversitario Nazionale per la Scienza e Tecnologia dei Materiali, Via G. Giusti 9, 50121 Firenze, Italy
| | - Lorenzo Cerri
- Dipartimento di Chimica, Università degli Studi di Firenze, Via della Lastruccia 3, 50019 Sesto Fiorentino, Italy
| | - Nicola Calisi
- INSTM, Consorzio Interuniversitario Nazionale per la Scienza e Tecnologia dei Materiali, Via G. Giusti 9, 50121 Firenze, Italy
- Dipartimento di Ingegneria Industriale (DIEF), Università di Firenze, Via S. Marta 3, I-50139 Firenze, Italy
| | - Antonio Alessio Leonardi
- Dipartimento di Fisica ed Astronomia, Università di Catania, Via Santa Sofia 64, 95123 Catania, Italy
| | - Maria Josè Lo Faro
- Dipartimento di Fisica ed Astronomia, Università di Catania, Via Santa Sofia 64, 95123 Catania, Italy
| | - Alessia Irrera
- URT LAB SENS, Beyond Nano-CNR, c/o Department of Chemical, Biological, Pharmaceutical and Environmental Sciences, University of Messina, Viale Ferdinando Stagno d’Alcontres 5, 98166 Messina, Italy
| | - Enrico Berretti
- CNR-ICCOM, Istituto di Chimica dei Composti OrganoMetallici, Via Madonna del Piano 10, 50019 Sesto Fiorentino (FI), Italy
| | | | - Alvaro Colina
- Dipertimento di Chimica, Università di Burgos, Piazza Misael Bañuelos s/n, 09001 Burgos, Spain
| | - Elena Bujedo Saiz
- Dipertimento di Chimica, Università di Burgos, Piazza Misael Bañuelos s/n, 09001 Burgos, Spain
| | - Massimo Innocenti
- Dipartimento di Chimica, Università degli Studi di Firenze, Via della Lastruccia 3, 50019 Sesto Fiorentino, Italy
- INSTM, Consorzio Interuniversitario Nazionale per la Scienza e Tecnologia dei Materiali, Via G. Giusti 9, 50121 Firenze, Italy
- CNR-ICCOM, Istituto di Chimica dei Composti OrganoMetallici, Via Madonna del Piano 10, 50019 Sesto Fiorentino (FI), Italy
- CSGI, Center for Colloid and Surface Science, Via della Lastruccia 3, 50019 Sesto Fiorentino, Italy
- Correspondence: (M.V.); (M.I.)
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8
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Gao Q, Chen L, Chen S, Zhang Z, Yang J, Pan X, Yi Z, Liu L, Chi F, Liu P, Zhang C. NaCl-Assisted Chemical Vapor Deposition of Large-Domain Bilayer MoS 2 on Soda-Lime Glass. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2913. [PMID: 36079950 PMCID: PMC9457956 DOI: 10.3390/nano12172913] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/06/2022] [Revised: 08/19/2022] [Accepted: 08/20/2022] [Indexed: 06/15/2023]
Abstract
In recent years, two-dimensional molybdenum disulfide (MoS2) has attracted extensive attention in the application field of next-generation electronics. Compared with single-layer MoS2, bilayer MoS2 has higher carrier mobility and has more promising applications for future novel electronic devices. Nevertheless, the large-scale low-cost synthesis of high-quality bilayer MoS2 still has much room for exploration, requiring further research. In this study, bilayer MoS2 crystals grown on soda-lime glass substrate by sodium chloride (NaCl)-assisted chemical vapor deposition (CVD) were reported, the growth mechanism of NaCl in CVD of bilayer MoS2 was analyzed, and the effects of molybdenum trioxide (Mo) mass and growth pressure on the growth of bilayer MoS2 under the assistance of NaCl were further explored. Through characterization with an optical microscope, atomic force microscopy and Raman analyzer, the domain size of bilayer MoS2 prepared by NaCl-assisted CVD was shown to reach 214 μm, which is a 4.2X improvement of the domain size of bilayer MoS2 prepared without NaCl-assisted CVD. Moreover, the bilayer structure accounted for about 85%, which is a 2.1X improvement of bilayer MoS2 prepared without NaCl-assisted CVD. This study provides a meaningful method for the growth of high-quality bilayer MoS2, and promotes the large-scale and low-cost applications of CVD MoS2.
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Affiliation(s)
- Qingguo Gao
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Lvcheng Chen
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Simin Chen
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Zhi Zhang
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Jianjun Yang
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Xinjian Pan
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Zichuan Yi
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Liming Liu
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Feng Chi
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Ping Liu
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Chongfu Zhang
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
- School of Information and Communication Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
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