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Celano U, Schmidt D, Beitia C, Orji G, Davydov AV, Obeng Y. Metrology for 2D materials: a perspective review from the international roadmap for devices and systems. NANOSCALE ADVANCES 2024; 6:2260-2269. [PMID: 38694454 PMCID: PMC11059534 DOI: 10.1039/d3na01148h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Accepted: 03/30/2024] [Indexed: 05/04/2024]
Abstract
The International Roadmap for Devices and Systems (IRDS) predicts the integration of 2D materials into high-volume manufacturing as channel materials within the next decade, primarily in ultra-scaled and low-power devices. While their widespread adoption in advanced chip manufacturing is evolving, the need for diverse characterization methods is clear. This is necessary to assess structural, electrical, compositional, and mechanical properties to control and optimize 2D materials in mass-produced devices. Although the lab-to-fab transition remains nascent and a universal metrology solution is yet to emerge, rapid community progress underscores the potential for significant advancements. This paper reviews current measurement capabilities, identifies gaps in essential metrology for CMOS-compatible 2D materials, and explores fundamental measurement science limitations when applying these techniques in high-volume semiconductor manufacturing.
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Affiliation(s)
- Umberto Celano
- School of Electrical, Computer and Energy Engineering, Arizona State University Tempe AZ 85287 USA
| | | | - Carlos Beitia
- Unity-SC 611 Rue Aristide Berges 38330 Montbonnot-Saint-Martin France
| | - George Orji
- National Institute of Standards and Technology 100 Bureau Drive Gaithersburg MD USA
| | - Albert V Davydov
- National Institute of Standards and Technology 100 Bureau Drive Gaithersburg MD USA
| | - Yaw Obeng
- National Institute of Standards and Technology 100 Bureau Drive Gaithersburg MD USA
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2
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Minj A, Mootheri V, Banerjee S, Nalin Mehta A, Serron J, Hantschel T, Asselberghs I, Goux L, Kar GS, Heyns M, Lin DHC. Direct Assessment of Defective Regions in Monolayer MoS 2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements. ACS NANO 2024; 18:10653-10666. [PMID: 38556983 DOI: 10.1021/acsnano.4c03080] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Implementing two-dimensional materials in field-effect transistors (FETs) offers the opportunity to continue the scaling trend in the complementary metal-oxide-semiconductor technology roadmap. Presently, the search for electrically active defects, in terms of both their density of energy states and their spatial distribution, has turned out to be of paramount importance in synthetic transition metal dichalcogenides layers, as they are suspected of severely inhibiting these devices from achieving their highest performance. Although advanced microscopy tools have allowed the direct detection of physical defects such as grain boundaries and point defects, their implementation at the device scale to assess the active defect distribution and their impact on field-induced channel charge modulation and current transport is strictly restrained. Therefore, it becomes critical to directly probe the gate modulation effect on the carrier population at the nanoscale of an FET channel, with the objective to establish a direct correlation with the device characteristics. Here, we have investigated the active channel in a monolayer MoS2 FET through in situ scanning probe microscopy, namely, Kelvin probe force microscopy and scanning capacitance microscopy, to directly identify active defect sites and to improve our understanding of the contribution of grain boundaries, bilayer islands, and defective grain domains to channel conductance.
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Affiliation(s)
| | - Vivek Mootheri
- IMEC, Kapeldreef 75, 3001 Leuven, Belgium
- Department of Materials, KU Leuven, Kapeldreef 75, 3001 Leuven, Belgium
| | | | | | | | | | | | | | | | - Marc Heyns
- IMEC, Kapeldreef 75, 3001 Leuven, Belgium
- Department of Materials, KU Leuven, Kapeldreef 75, 3001 Leuven, Belgium
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3
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Fu M, Xu S, Zhang S, Ruta FL, Pack J, Mayer RA, Chen X, Moore SL, Rizzo DJ, Jessen BS, Cothrine M, Mandrus DG, Watanabe K, Taniguchi T, Dean CR, Pasupathy AN, Bisogni V, Schuck PJ, Millis AJ, Liu M, Basov DN. Accelerated Nano-Optical Imaging through Sparse Sampling. NANO LETTERS 2024; 24:2149-2156. [PMID: 38329715 DOI: 10.1021/acs.nanolett.3c03733] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
The integration time and signal-to-noise ratio are inextricably linked when performing scanning probe microscopy based on raster scanning. This often yields a large lower bound on the measurement time, for example, in nano-optical imaging experiments performed using a scanning near-field optical microscope (SNOM). Here, we utilize sparse scanning augmented with Gaussian process regression to bypass the time constraint. We apply this approach to image charge-transfer polaritons in graphene residing on ruthenium trichloride (α-RuCl3) and obtain key features such as polariton damping and dispersion. Critically, nano-optical SNOM imaging data obtained via sparse sampling are in good agreement with those extracted from traditional raster scans but require 11 times fewer sampled points. As a result, Gaussian process-aided sparse spiral scans offer a major decrease in scanning time.
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Affiliation(s)
- Matthew Fu
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Suheng Xu
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Shuai Zhang
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Francesco L Ruta
- Department of Physics, Columbia University, New York, New York 10027, United States
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Jordan Pack
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Rafael A Mayer
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794, United States
| | - Xinzhong Chen
- Department of Physics, Columbia University, New York, New York 10027, United States
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794, United States
| | - Samuel L Moore
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Daniel J Rizzo
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Bjarke S Jessen
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Matthew Cothrine
- Department of Material Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - David G Mandrus
- Material Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Department of Material Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Cory R Dean
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Abhay N Pasupathy
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Valentina Bisogni
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - P James Schuck
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Andrew J Millis
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Mengkun Liu
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794, United States
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - D N Basov
- Department of Physics, Columbia University, New York, New York 10027, United States
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4
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Tian S, Sun D, Chen F, Wang H, Li C, Yin C. Recent progress in plasma modification of 2D metal chalcogenides for electronic devices and optoelectronic devices. NANOSCALE 2024; 16:1577-1599. [PMID: 38173407 DOI: 10.1039/d3nr05618j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
Two-dimensional metal chalcogenides (2D MCs) present a great opportunity for overcoming the size limitation of traditional silicon-based complementary metal-oxide-semiconductor (CMOS) devices. Controllable modulation compatible with CMOS processes is essential for the improvement of performance and the large-scale applications of 2D MCs. In this review, we summarize the recent progress in plasma modification of 2D MCs, including substitutional doping, defect engineering, surface charge transfer, interlayer coupling modulation, thickness control, and nano-array pattern etching in the fields of electronic devices and optoelectronic devices. Finally, challenges and outlooks for plasma modulation of 2D MCs are presented to offer valuable references for future studies.
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Affiliation(s)
- Siying Tian
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
- University of Chinese Academy of Sciences, No. 19 A Yuquan Road, Beijing 100049, China
| | - Dapeng Sun
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
| | - Fengling Chen
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
| | - Honghao Wang
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
- University of Chinese Academy of Sciences, No. 19 A Yuquan Road, Beijing 100049, China
| | - Chaobo Li
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
| | - Chujun Yin
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
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5
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Weber J, Yuan Y, Pazos S, Kühnel F, Metzke C, Schätz J, Frammelsberger W, Benstetter G, Lanza M. Current-Limited Conductive Atomic Force Microscopy. ACS APPLIED MATERIALS & INTERFACES 2023; 15:56365-56374. [PMID: 37988286 DOI: 10.1021/acsami.3c10262] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/23/2023]
Abstract
Conductive atomic force microscopy (CAFM) has become the preferred tool of many companies and academics to analyze the electronic properties of materials and devices at the nanoscale. This technique scans the surface of a sample using an ultrasharp conductive nanoprobe so that the contact area between them is very small (<100 nm2) and it can measure the properties of the sample with a very high lateral resolution. However, measuring relatively low currents (∼1 nA) in such small areas produces high current densities (∼1000 A/cm2), which almost always results in fast nanoprobe degradation. That is not only expensive but also endangers the reliability of the data collected because detecting which data sets are affected by tip degradation can be complex. Here, we show an inexpensive long-sought solution for this problem by using a current limitation system. We test its performance by measuring the tunneling current across a reference ultrathin dielectric when applying ramped voltage stresses at hundreds of randomly selected locations of its surface, and we conclude that the use of a current limitation system increases the lifetime of the tips by a factor of ∼50. Our work contributes to significantly enhance the reliability of one of the most important characterization techniques in the field of nanoelectronics.
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Affiliation(s)
- Jonas Weber
- Materials Science and Engineering Program, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
- Department of Electrical Engineering and Media Technology, Deggendorf Institute of Technology, Dieter-Görlitz-Platz 1, 94469 Deggendorf, Germany
- Department of Applied Physics, University of Barcelona, Martí i Franquès 1, 08028 Barcelona, Spain
| | - Yue Yuan
- Materials Science and Engineering Program, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Sebastian Pazos
- Materials Science and Engineering Program, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Fabian Kühnel
- Department of Electrical Engineering and Media Technology, Deggendorf Institute of Technology, Dieter-Görlitz-Platz 1, 94469 Deggendorf, Germany
- Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany
| | - Christoph Metzke
- Department of Electrical Engineering and Media Technology, Deggendorf Institute of Technology, Dieter-Görlitz-Platz 1, 94469 Deggendorf, Germany
- Department of Electrical Engineering, Helmut Schmidt University/University of the Federal Armed Forces Hamburg, Holstenhofweg 85, 22043 Hamburg, Germany
| | - Josef Schätz
- Infineon Technologies AG, Wernerwerkstraße 2, 93049 Regensburg, Germany
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Straße 2, 52074 Aachen, Germany
| | - Werner Frammelsberger
- Department of Mechanical Engineering and Mechatronics, Deggendorf Institute of Technology, Dieter-Görlitz-Platz 1, 94469 Deggendorf, Germany
| | - Günther Benstetter
- Department of Electrical Engineering and Media Technology, Deggendorf Institute of Technology, Dieter-Görlitz-Platz 1, 94469 Deggendorf, Germany
| | - Mario Lanza
- Materials Science and Engineering Program, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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Piquemal F, Kaja K, Chrétien P, Morán-Meza J, Houzé F, Ulysse C, Harouri A. A multi-resistance wide-range calibration sample for conductive probe atomic force microscopy measurements. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2023; 14:1141-1148. [PMID: 38034476 PMCID: PMC10682512 DOI: 10.3762/bjnano.14.94] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/13/2023] [Accepted: 11/09/2023] [Indexed: 12/02/2023]
Abstract
Measuring resistances at the nanoscale has attracted recent attention for developing microelectronic components, memory devices, molecular electronics, and two-dimensional materials. Despite the decisive contribution of scanning probe microscopy in imaging resistance and current variations, measurements have remained restricted to qualitative comparisons. Reference resistance calibration samples are key to advancing the research-to-manufacturing process of nanoscale devices and materials through calibrated, reliable, and comparable measurements. No such calibration reference samples have been proposed so far. In this work, we demonstrate the development of a multi-resistance reference sample for calibrating resistance measurements in conductive probe atomic force microscopy (C-AFM) covering the range from 100 Ω to 100 GΩ. We present a comprehensive protocol for in situ calibration of the whole measurement circuit encompassing the tip, the current sensing device, and the system controller. Furthermore, we show that our developed resistance reference enables the calibration of C-AFM with a combined relative uncertainty (given at one standard deviation) lower than 2.5% over an extended range from 10 kΩ to 100 GΩ and lower than 1% for a reduced range from 1 MΩ to 50 GΩ. Our findings break through the long-standing bottleneck in C-AFM measurements, providing a universal means for adopting calibrated resistance measurements at the nanoscale in the industrial and academic research and development sectors.
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Affiliation(s)
- François Piquemal
- Laboratoire national de métrologie et d’essais - LNE, Trappes, 78197 Cedex, France
| | - Khaled Kaja
- Laboratoire national de métrologie et d’essais - LNE, Trappes, 78197 Cedex, France
| | - Pascal Chrétien
- Université Paris-Saclay, CentraleSupélec, CNRS, Laboratoire de Génie Électrique et Électronique de Paris, 91192, Gif-sur-Yvette, France
- Sorbonne Université, CNRS, Laboratoire de Génie Électrique et Électronique de Paris, 75250, Paris, France
| | - José Morán-Meza
- Laboratoire national de métrologie et d’essais - LNE, Trappes, 78197 Cedex, France
| | - Frédéric Houzé
- Université Paris-Saclay, CentraleSupélec, CNRS, Laboratoire de Génie Électrique et Électronique de Paris, 91192, Gif-sur-Yvette, France
- Sorbonne Université, CNRS, Laboratoire de Génie Électrique et Électronique de Paris, 75250, Paris, France
| | - Christian Ulysse
- Centre de Nanosciences et de Nanotechnologies - C2N, Université Paris-Saclay, CNRS, UMR 9001, Palaiseau, 91120, France
| | - Abdelmounaim Harouri
- Centre de Nanosciences et de Nanotechnologies - C2N, Université Paris-Saclay, CNRS, UMR 9001, Palaiseau, 91120, France
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7
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Enrriques AE, Howard S, Timsina R, Khadka NK, Hoover AN, Ray AE, Ding L, Onwumelu C, Nordeng S, Mainali L, Uzer G, Davis PH. Atomic Force Microscopy Cantilever-Based Nanoindentation: Mechanical Property Measurements at the Nanoscale in Air and Fluid. J Vis Exp 2022:10.3791/64497. [PMID: 36533832 PMCID: PMC10141700 DOI: 10.3791/64497] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/04/2022] Open
Abstract
An atomic force microscope (AFM) fundamentally measures the interaction between a nanoscale AFM probe tip and the sample surface. If the force applied by the probe tip and its contact area with the sample can be quantified, it is possible to determine the nanoscale mechanical properties (e.g., elastic or Young's modulus) of the surface being probed. A detailed procedure for performing quantitative AFM cantilever-based nanoindentation experiments is provided here, with representative examples of how the technique can be applied to determine the elastic moduli of a wide variety of sample types, ranging from kPa to GPa. These include live mesenchymal stem cells (MSCs) and nuclei in physiological buffer, resin-embedded dehydrated loblolly pine cross-sections, and Bakken shales of varying composition. Additionally, AFM cantilever-based nanoindentation is used to probe the rupture strength (i.e., breakthrough force) of phospholipid bilayers. Important practical considerations such as method choice and development, probe selection and calibration, region of interest identification, sample heterogeneity, feature size and aspect ratio, tip wear, surface roughness, and data analysis and measurement statistics are discussed to aid proper implementation of the technique. Finally, co-localization of AFM-derived nanomechanical maps with electron microscopy techniques that provide additional information regarding elemental composition is demonstrated.
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Affiliation(s)
- Ashton E Enrriques
- Micron School of Materials Science & Engineering, Boise State University
| | - Sean Howard
- Department of Mechanical & Biomedical Engineering, Boise State University
| | | | | | - Amber N Hoover
- Energy and Environmental Science and Technology, Idaho National Laboratory
| | | | - Ling Ding
- Energy and Environmental Science and Technology, Idaho National Laboratory
| | - Chioma Onwumelu
- Harold Hamm School of Geology & Geological Engineering, University of North Dakota
| | - Stephan Nordeng
- Harold Hamm School of Geology & Geological Engineering, University of North Dakota
| | - Laxman Mainali
- Department of Physics, Boise State University; Biomolecular Sciences Graduate Program, Boise State University
| | - Gunes Uzer
- Department of Mechanical & Biomedical Engineering, Boise State University
| | - Paul H Davis
- Micron School of Materials Science & Engineering, Boise State University; Center for Advanced Energy Studies;
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8
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Jang J, Ra HS, Ahn J, Kim TW, Song SH, Park S, Taniguch T, Watanabe K, Lee K, Hwang DK. Fermi-Level Pinning-Free WSe 2 Transistors via 2D Van der Waals Metal Contacts and Their Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2109899. [PMID: 35306686 DOI: 10.1002/adma.202109899] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2021] [Revised: 03/16/2022] [Indexed: 06/14/2023]
Abstract
Precise control over the polarity of transistors is a key necessity for the construction of complementary metal-oxide-semiconductor circuits. However, the polarity control of 2D transistors remains a challenge because of the lack of a high-work-function electrode that completely eliminates Fermi-level pinning at metal-semiconductor interfaces. Here, a creation of clean van der Waals contacts is demonstrated, wherein a metallic 2D material, chlorine-doped SnSe2 (Cl-SnSe2 ), is used as the high-work-function contact, providing an interface that is free of defects and Fermi-level pinning. Such clean contacts made from Cl-SnSe2 can pose nearly ideal Schottky barrier heights, following the Schottky-Mott limit and thus permitting polarity-controllable transistors. With the integration of Cl-SnSe2 as contacts, WSe2 transistors exhibit pronounced p-type characteristics, which are distinctly different from those of the devices with evaporated metal contacts, where n-type transport is observed. Finally, this ability to control the polarity enables the fabrication of functional logic gates and circuits, including inverter, NAND, and NOR.
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Affiliation(s)
- Jisu Jang
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea
| | - Hyun-Soo Ra
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Jongtae Ahn
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Tae Wook Kim
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Seung Ho Song
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Korea
| | - Soohyung Park
- Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Takashi Taniguch
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Kenji Watanabe
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Kimoon Lee
- Department of Physics, Kunsan National University, Gunsan, 54150, Republic of Korea
| | - Do Kyung Hwang
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea
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9
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Rezk A, Alhammadi A, Alnaqbi W, Nayfeh A. Utilizing trapped charge at bilayer 2D MoS 2/SiO 2interface for memory applications. NANOTECHNOLOGY 2022; 33:275201. [PMID: 35344937 DOI: 10.1088/1361-6528/ac61cd] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Accepted: 03/28/2022] [Indexed: 06/14/2023]
Abstract
In this work we use conductive atomic force microscopy (cAFM) to study the charge injection process from a nanoscale tip to a single isolated bilayer 2D MoS2flake. The MoS2is exfoliated and bonded to ultra-thin SiO2/Si substrate. Local current-voltage (IV) measurements conducted by cAFM provides insight in charge trapping/de-trapping mechanisms at the MoS2/SiO2interface. The MoS2nano-flake provides an adjustable potential barrier for embedded trap sites where the charge is injected from AFM tip is confined at the interface. A window of (ΔV∼ 1.8 V) is obtain at a reading current of 2 nA between two consecutiveIVsweeps. This is a sufficient window to differentiate between the two states indicating memory behavior. Furthermore, the physics behind the charge entrapment and its contribution to the tunneling mechanisms is discussed.
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Affiliation(s)
- Ayman Rezk
- Department of Electrical Engineering and Computer Science Khalifa University, Abu Dhabi, 127788, United Arab Emirates
| | - Aisha Alhammadi
- Department of Electrical Engineering and Computer Science Khalifa University, Abu Dhabi, 127788, United Arab Emirates
| | - Wafa Alnaqbi
- Department of Electrical Engineering and Computer Science Khalifa University, Abu Dhabi, 127788, United Arab Emirates
| | - Ammar Nayfeh
- Department of Electrical Engineering and Computer Science Khalifa University, Abu Dhabi, 127788, United Arab Emirates
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10
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Panasci SE, Koos A, Schilirò E, Di Franco S, Greco G, Fiorenza P, Roccaforte F, Agnello S, Cannas M, Gelardi FM, Sulyok A, Nemeth M, Pécz B, Giannazzo F. Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS 2 Obtained by MoO 3 Sulfurization. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:182. [PMID: 35055201 PMCID: PMC8778062 DOI: 10.3390/nano12020182] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/03/2021] [Revised: 01/01/2022] [Accepted: 01/03/2022] [Indexed: 01/27/2023]
Abstract
In this paper, we report a multiscale investigation of the compositional, morphological, structural, electrical, and optical emission properties of 2H-MoS2 obtained by sulfurization at 800 °C of very thin MoO3 films (with thickness ranging from ~2.8 nm to ~4.2 nm) on a SiO2/Si substrate. XPS analyses confirmed that the sulfurization was very effective in the reduction of the oxide to MoS2, with only a small percentage of residual MoO3 present in the final film. High-resolution TEM/STEM analyses revealed the formation of few (i.e., 2-3 layers) of MoS2 nearly aligned with the SiO2 surface in the case of the thinnest (~2.8 nm) MoO3 film, whereas multilayers of MoS2 partially standing up with respect to the substrate were observed for the ~4.2 nm one. Such different configurations indicate the prevalence of different mechanisms (i.e., vapour-solid surface reaction or S diffusion within the film) as a function of the thickness. The uniform thickness distribution of the few-layer and multilayer MoS2 was confirmed by Raman mapping. Furthermore, the correlative plot of the characteristic A1g-E2g Raman modes revealed a compressive strain (ε ≈ -0.78 ± 0.18%) and the coexistence of n- and p-type doped areas in the few-layer MoS2 on SiO2, where the p-type doping is probably due to the presence of residual MoO3. Nanoscale resolution current mapping by C-AFM showed local inhomogeneities in the conductivity of the few-layer MoS2, which are well correlated to the lateral changes in the strain detected by Raman. Finally, characteristic spectroscopic signatures of the defects/disorder in MoS2 films produced by sulfurization were identified by a comparative analysis of Raman and photoluminescence (PL) spectra with CVD grown MoS2 flakes.
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Affiliation(s)
- Salvatore E. Panasci
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (S.E.P.); (E.S.); (S.D.F.); (G.G.); (P.F.); (F.R.); (S.A.)
- Department of Physics and Astronomy, University of Catania, 95123 Catania, Italy
| | - Antal Koos
- Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (A.K.); (A.S.); (M.N.)
| | - Emanuela Schilirò
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (S.E.P.); (E.S.); (S.D.F.); (G.G.); (P.F.); (F.R.); (S.A.)
| | - Salvatore Di Franco
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (S.E.P.); (E.S.); (S.D.F.); (G.G.); (P.F.); (F.R.); (S.A.)
| | - Giuseppe Greco
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (S.E.P.); (E.S.); (S.D.F.); (G.G.); (P.F.); (F.R.); (S.A.)
| | - Patrick Fiorenza
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (S.E.P.); (E.S.); (S.D.F.); (G.G.); (P.F.); (F.R.); (S.A.)
| | - Fabrizio Roccaforte
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (S.E.P.); (E.S.); (S.D.F.); (G.G.); (P.F.); (F.R.); (S.A.)
| | - Simonpietro Agnello
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (S.E.P.); (E.S.); (S.D.F.); (G.G.); (P.F.); (F.R.); (S.A.)
- Department of Physics and Chemistry Emilio Segrè, University of Palermo, 90123 Palermo, Italy; (M.C.); (F.M.G.)
- ATEN Center, University of Palermo, 90123 Palermo, Italy
| | - Marco Cannas
- Department of Physics and Chemistry Emilio Segrè, University of Palermo, 90123 Palermo, Italy; (M.C.); (F.M.G.)
| | - Franco M. Gelardi
- Department of Physics and Chemistry Emilio Segrè, University of Palermo, 90123 Palermo, Italy; (M.C.); (F.M.G.)
| | - Attila Sulyok
- Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (A.K.); (A.S.); (M.N.)
| | - Miklos Nemeth
- Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (A.K.); (A.S.); (M.N.)
| | - Béla Pécz
- Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (A.K.); (A.S.); (M.N.)
| | - Filippo Giannazzo
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (S.E.P.); (E.S.); (S.D.F.); (G.G.); (P.F.); (F.R.); (S.A.)
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11
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Panasci S, Schilirò E, Greco G, Cannas M, Gelardi FM, Agnello S, Roccaforte F, Giannazzo F. Strain, Doping, and Electronic Transport of Large Area Monolayer MoS 2 Exfoliated on Gold and Transferred to an Insulating Substrate. ACS APPLIED MATERIALS & INTERFACES 2021; 13:31248-31259. [PMID: 34165956 PMCID: PMC9280715 DOI: 10.1021/acsami.1c05185] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
Gold-assisted mechanical exfoliation currently represents a promising method to separate ultralarge (centimeter scale) transition metal dichalcogenide (TMD) monolayers (1L) with excellent electronic and optical properties from the parent van der Waals (vdW) crystals. The strong interaction between Au and chalcogen atoms is key to achieving this nearly perfect 1L exfoliation yield. On the other hand, it may significantly affect the doping and strain of 1L TMDs in contact with Au. In this paper, we systematically investigated the morphology, strain, doping, and electrical properties of large area 1L MoS2 exfoliated on ultraflat Au films (0.16-0.21 nm roughness) and finally transferred to an insulating Al2O3 substrate. Raman mapping and correlative analysis of the E' and A1' peak positions revealed a moderate tensile strain (ε ≈ 0.2%) and p-type doping (n ≈ -0.25 × 1013 cm-2) of 1L MoS2 in contact with Au. Nanoscale resolution current mapping and current-voltage (I-V) measurements by conductive atomic force microscopy (C-AFM) showed direct tunneling across the 1L MoS2 on Au, with a broad distribution of tunneling barrier values (ΦB from 0.7 to 1.7 eV) consistent with p-type doping of MoS2. After the final transfer of 1L MoS2 on Al2O3/Si, the strain was converted to compressive strain (ε ≈ -0.25%). Furthermore, an n-type doping (n ≈ 0.5 × 1013 cm-2) was deduced by Raman mapping and confirmed by electrical measurements of an Al2O3/Si back-gated 1L MoS2 transistor. These results provide a deeper understanding of the Au-assisted exfoliation mechanism and can contribute to its widespread application for the realization of novel devices and artificial vdW heterostructures.
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Affiliation(s)
- Salvatore
Ethan Panasci
- CNR-IMM, Strada VIII, 5 95121, Catania, Italy
- Department
of Physics and Astronomy, University of
Catania, Via Santa Sofia
64, 95123 Catania, Italy
| | | | | | - Marco Cannas
- Department
of Physics and Chemistry Emilio Segrè, University of Palermo, Via Archirafi 36, 90123 Palermo, Italy
| | - Franco M. Gelardi
- Department
of Physics and Chemistry Emilio Segrè, University of Palermo, Via Archirafi 36, 90123 Palermo, Italy
| | - Simonpietro Agnello
- CNR-IMM, Strada VIII, 5 95121, Catania, Italy
- Department
of Physics and Chemistry Emilio Segrè, University of Palermo, Via Archirafi 36, 90123 Palermo, Italy
- ATeN
Center, Università degli Studi di
Palermo, Viale delle
Scienze, Edificio 18, 90128 Palermo, Italy
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12
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Wang X, Wang B, Wu Y, Wang E, Luo H, Sun Y, Fu D, Sun Y, Liu K. Two-Dimensional Lateral Heterostructures Made by Selective Reaction on a Patterned Monolayer MoS 2 Matrix. ACS APPLIED MATERIALS & INTERFACES 2021; 13:26143-26151. [PMID: 34043911 DOI: 10.1021/acsami.1c00725] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) heterostructures have attracted widespread attention for their promising prospects in the fields of electronics and optoelectronics. However, in order to truly realize 2D-material-based integrated circuits, precisely controllable fabrication of 2D heterostructures is crucial and urgently needed. Here, we demonstrate an ex situ growth method of MoSe2/MoS2 lateral heterostructures by selective selenization of a laser-scanned, ultrathin oxidized region (MoOx) on a monolayer MoS2 matrix. In our method, monolayer MoS2 is scanned by a laser with a pre-designed pattern, where the laser-scanned MoS2 is totally oxidized into MoOx. The oxidized region is then selenized in a furnace, while the unoxidized MoS2 region remains unchanged, delivering a MoSe2/MoS2 heterostructure. Unlike in situ laser direct growth methods, our method separates the laser-scanned process from the selenization process, which avoids the long time of point-by-point selenization of MoS2 by laser, making the efficiency of the synthesis greatly improved. The formation process of the heterostructure is studied by Raman spectroscopy and Auger electron spectroscopy. This simple and controllable approach to lateral heterostructures with desired patterns paves the way for fast and mass integration of devices based on 2D heterostructures.
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Affiliation(s)
- Xuewen Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Bolun Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Yonghuang Wu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Enze Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Hao Luo
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Yufei Sun
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Deyi Fu
- College of Physical Science and Technology, Xiamen University, Xiamen, Fujian 361005, China
| | - Yinghui Sun
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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13
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Vaknin Y, Dagan R, Rosenwaks Y. Schottky Barrier Height and Image Force Lowering in Monolayer MoS 2 Field Effect Transistors. NANOMATERIALS 2020; 10:nano10122346. [PMID: 33255993 PMCID: PMC7761329 DOI: 10.3390/nano10122346] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/18/2020] [Revised: 11/18/2020] [Accepted: 11/23/2020] [Indexed: 11/16/2022]
Abstract
Understanding the nature of the barrier height in a two-dimensional semiconductor/metal interface is an important step for embedding layered materials in future electronic devices. We present direct measurement of the Schottky barrier height and its lowering in the transition metal dichalcogenide (TMD)/metal interface of a field effect transistor. It is found that the barrier height at the gold/ single-layer molybdenum disulfide (MoS2) interfaces decreases with increasing drain voltage, and this lowering reaches 0.5-1 V We also show that increase of the gate voltage induces additional barrier lowering.
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14
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Sun H, Zhou X, Wang X, Xu L, Zhang J, Jiang K, Shang L, Hu Z, Chu J. P-N conversion of charge carrier types and high photoresponsive performance of composition modulated ternary alloy W(S xSe 1-x) 2 field-effect transistors. NANOSCALE 2020; 12:15304-15317. [PMID: 32648866 DOI: 10.1039/d0nr04633g] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Transition metal dichalcogenides (TMDs) have emerged as a new class of two-dimensional (2D) materials, which are promising for diverse applications in nanoelectronics, optoelectronics, and photonics. To satisfy the requirements of the building blocks of functional devices, systematic modulation of the band gap and carrier type of TMDs materials becomes a significant challenge. Here, we report a salt-assisted chemical vapor deposition (CVD) approach for the simultaneous growth of alloy W(SxSe1-x)2 nanosheets with variable alloy compositions. Electrical transport studies based on the as-fabricated W(SxSe1-x)2 nanosheet field-effect transistors (FETs) demonstrate that charge carrier types of alloy nanosheet transistors can be systematically tuned by adjusting the alloy composition. Temperature-dependent current measurement shows that the main scattering mechanism is the charged impurity scattering. The effective Schottky barrier heights of bipolar W(SxSe1-x)2 transistors are initially increased and then decreased with increasing positive (or negative) gate voltage, which is tunable by varying the alloy composition. In addition, the tunability of these W(SxSe1-x)2-based ambipolar transistors is suitable for logic and analog applications and represents a critical step toward future fundamental studies as well as for the rational design of new 2D electronics with tailored spectral responses, and simpler and higher integration densities. Finally, the high photoresponsivity (up to 914 mA W-1) and detectivity (4.57 × 1010 Jones) of ultrathin W(SxSe1-x)2 phototransistors imply their potential applications in flexible light-detection and light-harvesting devices. These band gap engineered 2D structures could open up an exciting opportunity and contribute to finding diverse applications in future functional electronic/optoelectronic devices.
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Affiliation(s)
- Huimin Sun
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Xin Zhou
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Xiang Wang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Liping Xu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Jinzhong Zhang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Kai Jiang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Liyan Shang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China. and Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China and Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
| | - Junhao Chu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China. and Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China and Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
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