Detecting Hachimoji DNA: An Eight-Building-Block Genetic System with MoS2 and Janus MoSSe Monolayers

In the pursuit of personalized medicine, the development of efficient, cost-effective, and reliable DNA sequencing technology is crucial. Nanotechnology, particularly the exploration of two-dimensional materials, has opened different avenues for DNA nucleobase detection, owing to their impressive surface-to-volume ratio. This study employs density functional theory with van der Waals corrections to methodically scrutinize the adsorption behavior and electronic band structure properties of a DNA system composed of eight hachimoji nucleotide letters adsorbed on both MoS2 and MoSSe monolayers. Through a comprehensive conformational search, we pinpoint the most favorable adsorption sites, quantifying their adsorption energies and charge transfer properties. The analysis of electronic band structure unveils the emergence of flat bands in close proximity to the Fermi level post-adsorption, a departure from the pristine MoS2 and MoSSe monolayers. Furthermore, leveraging the nonequilibrium Green's function approach, we compute the current-voltage characteristics, providing valuable insights into the electronic transport properties of the system. All hachimoji bases exhibit physisorption with a horizontal orientation on both monolayers. Notably, base G demonstrates high sensitivity on both substrates. The obtained current-voltage (I-V) characteristics, both without and with base adsorption on MoS2 and the Se side of MoSSe, affirm excellent sensing performance. This research significantly advances our understanding of potential DNA sensing platforms and their electronic characteristics, thereby propelling the endeavor for personalized medicine through enhanced DNA sequencing technologies.

Describing the scattering of keV protons through graphene

Implementing two-dimensional materials in technological solutions requires fast, economic, and non-destructive tools to ensure efficient characterization. In this context, scattering of keV protons through free-standing graphene was proposed as an analytical tool. Here, we critically evaluate the predicted effects using classical simulations including a description of the lattice's thermal motion and the membrane corrugation via statistical averaging. Our study shows that the zero-point motion of the lattice atoms alone leads to considerable broadening of the signal that is not properly described by thermal averaging of the interaction potential. In combination with the non-negligible probability for introducing defects, it limits the prospect of proton scattering at 5 keV as an analytic tool.

Interplay of Kinetic Limitations and Disintegration: Selective Growth of Hexagonal Boron Nitride and Borophene Monolayers on Metal Substrates

The CVD growth of bielemental 2D-materials by using molecular precursors involves complex formation kinetics taking place at the surface and sometimes also subsurface regions of the substrate. Competing microscopic processes fundamentally limit the parameter space for optimal growth of the desired material. Kinetic limitations for diffusion and nucleation cause a high density of small domains and grain boundaries. These are usually overcome by increasing the growth temperature and decreasing the growth rate. In contrast, the nature of molecular precursors with limited thermal stability can result in dissociation and preferential desorption, leading to an undesired or ill-defined composition of the 2D-material. Here we demonstrate these constraints in a combined low-energy electron diffraction and low-energy electron microscopy study by examining the selective formation of single-layer hexagonal boron nitride (hBN) and borophene on Ir(111) using a borazine precursor. We derive a temperature-pressure phase diagram and apply classical nucleation theory to describe our results. By considering the competing processes, we find an optimum growth temperature for hBN of 950 °C. At lower temperatures, the hBN island density is increased, while at higher temperatures the precursor disintegrates and borophene is formed. Our results introduce an additional aspect that must be considered in any high-temperature growth of bielemental 2D-materials from single molecular precursors.

Overlapping electron density and the global delocalization of π-aromatic fragments as the reason of conductivity of the biphenylene network

Recently fabricated 2D biphenylene network is an astonishing solid-state material, which possesses unique metal-like conductive properties. At the same time, two-dimensional boron nitride network (2D-BN)-an isoelectronic and structural analogue of biphenylene network, is an insulator with a wide direct bandgap. This study investigates the relationship between the electronic properties and chemical bonding patterns for these species. It is shown that the insulating 2D-BN network possesses a strong localization of electron density on the nitrogen atoms. In turn, for a carbon-containing sheet, we found a highly delocalized electron density and an appreciable overlap of p_z orbitals of neighboring C₆ rings, which might be a reason for the conductive properties of the material.

2D Material-Enabled Optical Rectennas with Ultrastrong Light-Electron Coupling

Optical rectennas extend the electromagnetic wave rectification process into the visible regime and provide a route toward high-performance photodetection and energy harvesting. Here, the promise of 2D materials toward on-chip optical rectennas is demonstrated. A self-aligned patterning process yields lateral MIM structures where a nanometer-sized air gap separates a 2D material contact from a metal electrode. This device can be scalably produced in large arrays using established microfabrication techniques. Different from previous approaches, the performance of the 2D rectenna can be adjusted through electrostatic gating. Optimization of the band alignment leads to strong rectification at wavelengths around 500 nm and clear polarization control. Comparison of wavelength-dependent rectenna performance with a photon-assisted tunneling model reveals a tenfold increase in photon-electron coupling over nanotube-based rectennas. The results highlight the potential of 2D material-based rectennas for future quantum computing applications.

Utilizing trapped charge at bilayer 2D MoS2/SiO2interface for memory applications

In this work we use conductive atomic force microscopy (cAFM) to study the charge injection process from a nanoscale tip to a single isolated bilayer 2D MoS₂flake. The MoS₂is exfoliated and bonded to ultra-thin SiO₂/Si substrate. Local current-voltage (IV) measurements conducted by cAFM provides insight in charge trapping/de-trapping mechanisms at the MoS₂/SiO₂interface. The MoS₂nano-flake provides an adjustable potential barrier for embedded trap sites where the charge is injected from AFM tip is confined at the interface. A window of (ΔV∼ 1.8 V) is obtain at a reading current of 2 nA between two consecutiveIVsweeps. This is a sufficient window to differentiate between the two states indicating memory behavior. Furthermore, the physics behind the charge entrapment and its contribution to the tunneling mechanisms is discussed.

Investigation of structural, electronic and thermoelectric properties of two-dimensional graphdiyne/borophene monolayers and hetero-bilayers

The integration of dissimilar 2D materials is important for nanoelectronic and thermoelectric applications. Among different polymorphs and different bond geometries, borophene and graphdiyne (GDY) are two promising candidates for these applications. In the present paper, we have studied hetero-bilayers comprising graphdiyne-borophene (GDY-BS) sheets. Three structural models, namely S₀, S₁and S₂have been used for borophene sheets. The optimum interlayer distance for the hetero-bilayers was obtained through binding energy calculations. Then, the structure and electronic properties of the monolayers and hetero-bilayers were individually examined and compared. GDY monolayer was shown to be a semiconductor with a band gap of 0.43 eV, while the borophene monolayers, as well as all studied hetero-bilayers showed metallic behavior. The thermoelectric properties of borophene and GDY monolayers and the GDY-BS bilayers were calculated on the basis of the semi-classical Boltzmann theory. The results showed signs of improvement in the conductivity behavior of the hetero-bilayers. Furthermore, considering the increase in Seebeck coefficient and the conductivity for all the structures after calculating figure of merit and power factor, a higher power factor and more energy generation were observed for bilayers. These results show that the GDY-BS hetero-bilayers can positively affect the performance of thermoelectric devices.

Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching

Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage devices to store the required information, but their lack of flexibility limits their potential for biological applications. After the discovery of two-dimensional (2D) materials, flexible memory devices are easy to build, because of their flexible nature. Here, we report on our flexible resistive-switching devices, composed of a bilayer tin-oxide/tungsten-ditelluride (SnO2/WTe2) heterostructure sandwiched between Ag (top) and Au (bottom) metal electrodes over a flexible PET substrate. The Ag/SnO2/WTe2/Au flexible devices exhibited highly stable resistive switching along with an excellent retention time. Triggering the device from a high-resistance state (HRS) to a low-resistance state (LRS) is attributed to Ag filament formation because of its diffusion. The conductive filament begins its development from the anode to the cathode, contrary to the formal electrochemical metallization theory. The bilayer structure of SnO2/WTe2 improved the endurance of the devices and reduced the switching voltage by up to 0.2 V compared to the single SnO2 stacked devices. These flexible and low-power-consumption features may lead to the construction of a wearable memory device for data-storage purposes.

Gene Sets and Mechanisms of Sulfate-Reducing Bacteria Biofilm Formation and Quorum Sensing With Impact on Corrosion

Sulfate-reducing bacteria (SRB) have a unique ability to respire under anaerobic conditions using sulfate as a terminal electron acceptor, reducing it to hydrogen sulfide. SRB thrives in many natural environments (freshwater sediments and salty marshes), deep subsurface environments (oil wells and hydrothermal vents), and processing facilities in an industrial setting. Owing to their ability to alter the physicochemical properties of underlying metals, SRB can induce fouling, corrosion, and pipeline clogging challenges. Indigenous SRB causes oil souring and associated product loss and, subsequently, the abandonment of impacted oil wells. The sessile cells in biofilms are 1,000 times more resistant to biocides and induce 100-fold greater corrosion than their planktonic counterparts. To effectively combat the challenges posed by SRB, it is essential to understand their molecular mechanisms of biofilm formation and corrosion. Here, we examine the critical genes involved in biofilm formation and microbiologically influenced corrosion and categorize them into various functional categories. The current effort also discusses chemical and biological methods for controlling the SRB biofilms. Finally, we highlight the importance of surface engineering approaches for controlling biofilm formation on underlying metal surfaces.

Influence of Plasmon Resonances and Symmetry Effects on Second Harmonic Generation in WS2-Plasmonic Hybrid Metasurfaces

The nonlinear process of second harmonic generation (SHG) in monolayer (1L) transition metal dichalcogenides (TMD), like WS₂, strongly depends on the polarization state of the excitation light. By combination of plasmonic nanostructures with 1L-WS₂ by transferring it onto a plasmonic nanoantenna array, a hybrid metasurface is realized impacting the polarization dependency of its SHG. Here, we investigate how plasmonic dipole resonances affect the process of SHG in plasmonic-TMD hybrid metasurfaces by nonlinear spectroscopy. We show that the polarization dependency is affected by the lattice structure of plasmonic nanoantenna arrays as well as by the relative orientation between the 1L-WS₂ and the individual plasmonic nanoantennas. In addition, such hybrid metasurfaces show SHG in polarization states, where SHG is usually forbidden for either 1L-WS₂ or plasmonic nanoantennas. By comparing the SHG in these channels with the SHG generated by the hybrid metasurface components, we detect an enhancement of the SHG signal by a factor of more than 40. Meanwhile, an attenuation of the SHG signal in usually allowed polarization states is observed. Our study provides valuable insight into hybrid systems where symmetries strongly affect the SHG and enable tailored SHG in 1L-WS₂ for future applications.

Non-Carbon 2D Materials-Based Field-Effect Transistor Biosensors: Recent Advances, Challenges, and Future Perspectives

In recent years, field-effect transistors (FETs) have been very promising for biosensor applications due to their high sensitivity, real-time applicability, scalability, and prospect of integrating measurement system on a chip. Non-carbon 2D materials, such as transition metal dichalcogenides (TMDCs), hexagonal boron nitride (h-BN), black phosphorus (BP), and metal oxides, are a group of new materials that have a huge potential in FET biosensor applications. In this work, we review the recent advances and remarkable studies of non-carbon 2D materials, in terms of their structures, preparations, properties and FET biosensor applications. We will also discuss the challenges facing non-carbon 2D materials-FET biosensors and their future perspectives.

Two-Step Exfoliation of WS2 for NO2, H2 and Humidity Sensing Applications

WS₂ exfoliated by a combined ball milling and sonication technique to produce few-layer WS₂ is characterized and assembled as chemo-resistive NO₂, H₂ and humidity sensors. Microstructural analyses reveal flakes with average dimensions of 110 nm, "aspect ratio" of lateral dimension to the thickness of 27. Due to spontaneous oxidation of exfoliated WS₂ to amorphous WO₃, films have been pre-annealed at 180 °C to stabilize WO₃ content at ≈58%, as determined by X-ray Photoelectron Spectroscopy (XPS), Raman and grazing incidence X-ray Diffraction (XRD) techniques. Microstructural analysis repeated after one-year conditioning highlighted that amorphous WO₃ concentration is stable, attesting the validity of the pre-annealing procedure. WS₂ films were NO₂, H₂ and humidity tested at 150 °C operating Temperature (OT), exhibiting experimental detection limits of 200 ppb and 5 ppm to NO₂ and H₂ in dry air, respectively. Long-term stability of the electrical response recorded over one year of sustained conditions at 150 °C OT and different gases demonstrated good reproducibility of the electrical signal. The role played by WO₃ and WS₂ upon gas response has been addressed and a likely reaction gas-mechanism presented. Controlling the microstructure and surface oxidation of exfoliated Transition Metal Dichalcogenides (TMDs) represents a stepping-stone to assess the reproducibility and long-term response of TMDs monolayers in gas sensing applications.

All-2D Material Inkjet-Printed Capacitors: Toward Fully Printed Integrated Circuits

A well-defined insulating layer is of primary importance in the fabrication of passive ( e.g., capacitors) and active ( e.g., transistors) components in integrated circuits. One of the most widely known two-dimensional (2D) dielectric materials is hexagonal boron nitride (hBN). Solution-based techniques are cost-effective and allow simple methods to be used for device fabrication. In particular, inkjet printing is a low-cost, noncontact approach, which also allows for device design flexibility, produces no material wastage, and offers compatibility with almost any surface of interest, including flexible substrates. In this work, we use water-based and biocompatible graphene and hBN inks to fabricate all-2D material and inkjet-printed capacitors. We demonstrate an areal capacitance of 2.0 ± 0.3 nF cm^-2 for a dielectric thickness of ∼3 μm and negligible leakage currents, averaged across more than 100 devices. This gives rise to a derived dielectric constant of 6.1 ± 1.7. The inkjet printed hBN dielectric has a breakdown field of 1.9 ± 0.3 MV cm^-1. Fully printed capacitors with sub-micrometer hBN layer thicknesses have also been demonstrated. The capacitors are then exploited in two fully printed demonstrators: a resistor-capacitor (RC) low-pass filter and a graphene-based field effect transistor.

Monitoring morphological changes in 2D monolayer semiconductors using atom-thick plasmonic nanocavities

Nanometer-sized gaps between plasmonically coupled adjacent metal nanoparticles enclose extremely localized optical fields, which are strongly enhanced. This enables the dynamic investigation of nanoscopic amounts of material in the gap using optical interrogation. Here we use impinging light to directly tune the optical resonances inside the plasmonic nanocavity formed between single gold nanoparticles and a gold surface, filled with only yoctograms of semiconductor. The gold faces are separated by either monolayers of molybdenum disulfide (MoS2) or two-unit-cell thick cadmium selenide (CdSe) nanoplatelets. This extreme confinement produces modes with 100-fold compressed wavelength, which are exquisitely sensitive to morphology. Infrared scattering spectroscopy reveals how such nanoparticle-on-mirror modes directly trace atomic-scale changes in real time. Instabilities observed in the facets are crucial for applications such as heat-assisted magnetic recording that demand long-lifetime nanoscale plasmonic structures, but the spectral sensitivity also allows directly tracking photochemical reactions in these 2-dimensional solids.