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Duleba A, Pugachev M, Blumenau M, Martanov S, Naumov M, Shupletsov A, Kuntsevich A. Inert-Atmosphere Microfabrication Technology for 2D Materials and Heterostructures. MICROMACHINES 2023; 15:94. [PMID: 38258213 PMCID: PMC11154319 DOI: 10.3390/mi15010094] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 12/28/2023] [Accepted: 12/29/2023] [Indexed: 01/24/2024]
Abstract
Most 2D materials are unstable under ambient conditions. Assembly of van der Waals heterostructures in the inert atmosphere of the glove box with ex situ lithography partially solves the problem of device fabrication out of unstable materials. In our paper, we demonstrate an approach to the next-generation inert-atmosphere (nitrogen, <20 ppm oxygen content) fabrication setup, including optical contact mask lithography with a 2 μm resolution, metal evaporation, lift-off and placement of the sample to the cryostat for electric measurements in the same inert atmosphere environment. We consider basic construction principles, budget considerations, and showcase the fabrication and subsequent degradation of black-phosphorous-based structures within weeks. The proposed solutions are surprisingly compact and inexpensive, making them feasible for implementation in numerous 2D materials laboratories.
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Affiliation(s)
- Aliaksandr Duleba
- P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991, Russia; (A.D.); (M.P.); (M.B.); (S.M.); (A.S.)
| | - Mikhail Pugachev
- P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991, Russia; (A.D.); (M.P.); (M.B.); (S.M.); (A.S.)
| | - Mark Blumenau
- P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991, Russia; (A.D.); (M.P.); (M.B.); (S.M.); (A.S.)
| | - Sergey Martanov
- P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991, Russia; (A.D.); (M.P.); (M.B.); (S.M.); (A.S.)
| | - Mark Naumov
- Dukhov Research Institute of Automatics (VNIIA), Moscow 127055, Russia;
| | - Aleksey Shupletsov
- P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991, Russia; (A.D.); (M.P.); (M.B.); (S.M.); (A.S.)
| | - Aleksandr Kuntsevich
- P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991, Russia; (A.D.); (M.P.); (M.B.); (S.M.); (A.S.)
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Galiullin AA, Pugachev MV, Duleba AI, Kuntsevich AY. Cost-Effective Laboratory Matrix Projection Micro-Lithography System. MICROMACHINES 2023; 15:39. [PMID: 38258158 PMCID: PMC11154530 DOI: 10.3390/mi15010039] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2023] [Revised: 12/20/2023] [Accepted: 12/21/2023] [Indexed: 01/24/2024]
Abstract
This paper presents a home-built projection lithographer designed to transfer the image from a DLP (digital light processing) projector MEMS matrix onto the microscope objective's field of view, where a photoresist-covered substrate is placed. The photoresist is exposed using blue light with a wavelength of 450 nm. To calibrate the device and adjust focal lengths, we utilize a red light that does not affect the photoresist. The substrate is located on a movable platform, allowing the exposure field to be shifted, enabling the exposure of designs with lateral sizes of 1 × 1 cm2 at a resolution of a few micrometers. Our setup showcases a 2 μm resolution for the single frame 200 × 100 μm2, and a 5 μm resolution for 1 × 1 cm2 with field stitching. The exposure speed, approximately 1 mm2/100 s, proves to be sufficient for a variety of laboratory prototyping needs. This system offers a significant advantage due to its utilization of easily accessible and budget-friendly components, thereby enhancing its accessibility for a broader user base. The exposure speed and resolution meet the requirements for laboratory prototyping in the fields of 2D materials, quantum optics, superconducting microelectronics, microfluidics, and biology.
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Affiliation(s)
| | | | | | - Aleksandr Yu. Kuntsevich
- P.N. Lebedev Physical Institute of the Russian Academy of Science, 119991 Moscow, Russia; (A.A.G.); (M.V.P.); (A.I.D.)
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Pesquera D, Fernández A, Khestanova E, Martin LW. Freestanding complex-oxide membranes. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:383001. [PMID: 35779514 DOI: 10.1088/1361-648x/ac7dd5] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2022] [Accepted: 07/01/2022] [Indexed: 06/15/2023]
Abstract
Complex oxides show a vast range of functional responses, unparalleled within the inorganic solids realm, making them promising materials for applications as varied as next-generation field-effect transistors, spintronic devices, electro-optic modulators, pyroelectric detectors, or oxygen reduction catalysts. Their stability in ambient conditions, chemical versatility, and large susceptibility to minute structural and electronic modifications make them ideal subjects of study to discover emergent phenomena and to generate novel functionalities for next-generation devices. Recent advances in the synthesis of single-crystal, freestanding complex oxide membranes provide an unprecedented opportunity to study these materials in a nearly-ideal system (e.g. free of mechanical/thermal interaction with substrates) as well as expanding the range of tools for tweaking their order parameters (i.e. (anti-)ferromagnetic, (anti-)ferroelectric, ferroelastic), and increasing the possibility of achieving novel heterointegration approaches (including interfacing dissimilar materials) by avoiding the chemical, structural, or thermal constraints in synthesis processes. Here, we review the recent developments in the fabrication and characterization of complex-oxide membranes and discuss their potential for unraveling novel physicochemical phenomena at the nanoscale and for further exploiting their functionalities in technologically relevant devices.
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Affiliation(s)
- David Pesquera
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST Campus UAB, Bellaterra, Barcelona 08193, Spain
| | - Abel Fernández
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States of America
| | | | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States of America
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States of America
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Bisswanger T, Winter Z, Schmidt A, Volmer F, Watanabe K, Taniguchi T, Stampfer C, Beschoten B. CVD Bilayer Graphene Spin Valves with 26 μm Spin Diffusion Length at Room Temperature. NANO LETTERS 2022; 22:4949-4955. [PMID: 35649273 DOI: 10.1021/acs.nanolett.2c01119] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
We present inverted spin-valve devices fabricated from chemical vapor deposition (CVD)-grown bilayer graphene (BLG) that show more than a doubling in device performance at room temperature compared to state-of-the-art bilayer graphene spin valves. This is made possible by a polydimethylsiloxane droplet-assisted full-dry transfer technique that compensates for previous process drawbacks in device fabrication. Gate dependent Hanle measurements reveal spin lifetimes of up to 5.8 ns and a spin diffusion length of up to 26 μm at room temperature combined with a charge carrier mobility of about 24 000 cm2(V s)-1 for the best device. Our results demonstrate that CVD-grown BLG shows equally good room temperature spin transport properties as both CVD-grown single-layer graphene and even exfoliated single-layer graphene.
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Affiliation(s)
- Timo Bisswanger
- 2nd Institute of Physics and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany
| | - Zachary Winter
- 2nd Institute of Physics and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany
| | - Anne Schmidt
- 2nd Institute of Physics and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany
| | - Frank Volmer
- 2nd Institute of Physics and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Christoph Stampfer
- 2nd Institute of Physics and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany
- Peter Grünberg Institute (PGI-9) Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Bernd Beschoten
- 2nd Institute of Physics and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany
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Wu X, Chen X, Yang R, Zhan J, Ren Y, Li K. Recent Advances on Tuning the Interlayer Coupling and Properties in van der Waals Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105877. [PMID: 35044721 DOI: 10.1002/smll.202105877] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2021] [Revised: 11/25/2021] [Indexed: 06/14/2023]
Abstract
2D van der Waals (vdW) heterostructures are receiving increasing research attention due to the theoretically amazing properties and unprecedented application potential. However, the as-synthesized heterostructures are generally underperforming due to the weak interlayer coupling, which inspires the researchers to find ways to modulate the interlayer coupling and properties, realizing the tailored performance for actual applications. There have been a lot of publications regarding the controllable regulation of the structures and properties of 2D vdW heterostructures in the past few years, while a review work summarizing the current advances is not yet available, though it is significant. This paper conducts a state-of-the-art review regarding the current research progress of performance modulation of vdW heterostructures by different techniques. First, the general synthesis methods of vdW heterostructures are summarized. Then, different performance modulation techniques, that is, mechanical-based, external fields-assisted, and particle beam irradiation-based methods, are discussed and compared in detail. Some of the newly proposed concepts are described. Thereafter, applications of vdW heterostructures with tailored properties are reviewed for the application prospects of the topic around this area. Moreover, the future research challenges and prospects are discussed, aiming at triggering more research interest and device applications around this topic.
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Affiliation(s)
- Xin Wu
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong, 519082, China
| | - Xiyue Chen
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong, 519082, China
| | - Ruxue Yang
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong, 519082, China
| | - Jianbin Zhan
- State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing, 400044, China
| | - Yingzhi Ren
- State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing, 400044, China
| | - Kun Li
- State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing, 400044, China
- Chongqing Key Laboratory of Metal Additive Manufacturing (3D Printing), Chongqing University, Chongqing, 400044, China
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Klokov AY, Frolov NY, Sharkov AI, Nikolaev SN, Chernopitssky MA, Chentsov SI, Pugachev MV, Duleba AI, Shupletsov AV, Krivobok VS, Kuntsevich AY. 3D Hypersound Microscopy of van der Waals Heterostructures. NANO LETTERS 2022; 22:2070-2076. [PMID: 35225628 DOI: 10.1021/acs.nanolett.2c00003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
The mechanical properties of the layered crystals in the few layer limit are largely unexplored. We employ a picosecond ultrasonic technique to access the corresponding mechanical parameters. Temporal variation of the reflection coefficient of the Al film that covers hBN/WSe2/hBN (where hBN is hexagonal boron nitride) heterostructures on a sapphire substrate after the femtosecond laser pulse excitation is carefully measured using an interferometric technique with spatial resolution. The laser pulse generates a broadband sound wave packet propagating perpendicularly to the Al plane and partially reflecting from the heterostructural interfaces. The demonstrated technique allows one to resolve a WSe2 monolayer embedded in hBN. We apply a multilayered model of the optoacoustical response to evaluate the mechanical parameters, in particular, the rigidity of the interfaces. Mapping of the Fourier spectra of the response visualizes different composition regions and may serve as an acoustic tomography tool. Almost zero phonon dissipation below 150 GHz demonstrates the van der Waals heterostructures' potential for nanoacoustical applications.
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Affiliation(s)
- Andrey Yu Klokov
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
| | - Nikolay Yu Frolov
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
| | - Andrey I Sharkov
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
| | - Sergey N Nikolaev
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
| | - Maxim A Chernopitssky
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
| | - Semen I Chentsov
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
| | - Mikhail V Pugachev
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
- Moscow Institute of Physics and Technology, Institutskiy per. 9, Dolgoprudny, Moscow Region 141701, Russia
| | - Aliaksandr I Duleba
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
| | - Alexey V Shupletsov
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
| | - Vladimir S Krivobok
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
| | - Aleksandr Yu Kuntsevich
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
- HSE University, 20 Myasnitskaya ulitsa, Moscow 101000, Russia
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7
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Micromask Lithography for Cheap and Fast 2D Materials Microstructures Fabrication. MICROMACHINES 2021; 12:mi12080850. [PMID: 34442473 PMCID: PMC8397995 DOI: 10.3390/mi12080850] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/23/2021] [Revised: 07/15/2021] [Accepted: 07/19/2021] [Indexed: 12/17/2022]
Abstract
The fast and precise fabrication of micro-devices based on single flakes of novel 2D materials and stacked heterostructures is vital for exploration of novel functionalities. In this paper, we demonstrate a fast high-resolution contact mask lithography through a simple upgrade of metallographic optical microscope. Suggested kit for the micromask lithography is compact and easily compatible with a glove box, thus being suitable for a wide range of air-unstable materials. The shadow masks could be either ordered commercially or fabricated in a laboratory using a beam lithography. The processes of the mask alignment and the resist exposure take a few minutes and provide a micrometer resolution. With the total price of the kit components around USD 200, our approach would be convenient for laboratories with the limited access to commercial lithographic systems.
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Buapan K, Somphonsane R, Chiawchan T, Ramamoorthy H. Versatile, Low-Cost, and Portable 2D Material Transfer Setup with a Facile and Highly Efficient DIY Inert-Atmosphere Glove Compartment Option. ACS OMEGA 2021; 6:17952-17964. [PMID: 34308030 PMCID: PMC8296015 DOI: 10.1021/acsomega.1c01582] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/24/2021] [Accepted: 06/25/2021] [Indexed: 06/13/2023]
Abstract
Research in van der Waals heterostructures has been rapidly progressing in the past decade, thanks to the art of sequential and deterministic placement of one two-dimensional (2D) material over another. The successful creation of heterostructures however has relied largely on expensive transfer systems that are not easily accessible to researchers. Although a few reports on low-cost systems have recently surfaced, the full functionality, portability features, and overall effectiveness of such systems are still being explored. In this work, we present an "all-in-one" low-cost transfer setup that is compact, lightweight, and portable and which can be quickly installed with a facile and do it yourself (DIY)-style anaerobic glovebox option that performs at par with commercial anaerobic systems. The "installable" glovebox option means the user has the convenience of quickly converting the working environment into an inert one when air-sensitive 2D materials are used. The lowest RH values obtained in our glovebox is <3%, and the O2 levels rapidly drop from 21% to less than 0.1% in just a few minutes of purging the chamber with inert gas. The transfer system is also equipped with a light-weight PID-controlled substrate heating option that can be easily assembled within just a few hours. We test the versatility of our low-cost system by the successful creation of hexagonal boron nitride (hBN)-encapsulated graphene and hBN-encapsulated molybdenum disulphide (MoS2) heterostructures using the hot pickup technique and graphene-hBN, MoS2-hBN, twisted MoS2, and twisted MoS2 on hBN stacks using the wetting technique, and a MoS2-hBN-graphene vertical tunneling heterostructure was formed using a combination approach. The effectiveness of the DIY glovebox is proven with the demonstration of extended stability of freshly exfoliated black phosphorous (BP) flakes, their encapsulation between thin hBN layers, and the formation of electrically contacted BP devices with a protective hBN top layer. At an overall price point of approximately 1000 $, the versatile setup presented here is expected to further contribute to the growth of research in 2D materials, in particular, for researchers initially faced with overcoming a huge entry-level threshold to work in the field of 2D materials and van der Waals heterostructures.
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Affiliation(s)
- Kanokwan Buapan
- Department
of Physics, Faculty of Science, King Mongkut’s
Institute of Technology Ladkrabang, 1 Chalongkrung Road, Bangkok 10520, Thailand
| | - Ratchanok Somphonsane
- Department
of Physics, Faculty of Science, King Mongkut’s
Institute of Technology Ladkrabang, 1 Chalongkrung Road, Bangkok 10520, Thailand
- Thailand
Center of Excellence in Physics, Commission
on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400, Thailand
| | - Tinna Chiawchan
- Department
of Physics, Faculty of Science, King Mongkut’s
Institute of Technology Ladkrabang, 1 Chalongkrung Road, Bangkok 10520, Thailand
| | - Harihara Ramamoorthy
- Department
of Electronics Engineering, Faculty of Engineering, King Mongkut’s Institute of Technology Ladkrabang, 1 Chalongkrung Road, Bangkok 10520, Thailand
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