1
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Supasai W, Siritaratiwat A, Srichan C, Suwanarat S, Amorntep N, Wannaprapa M, Jutong N, Chaisakul P, Wiangwiset T, Narkglom S, Keokhoungning T, Surawanitkun C. Enhancing modulation performance by design of hybrid plasmonic optical modulator integrating multi-layer graphene and TiO 2on silicon waveguides. NANOTECHNOLOGY 2024; 35:315201. [PMID: 38758958 DOI: 10.1088/1361-6528/ad43f2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Accepted: 04/26/2024] [Indexed: 05/19/2024]
Abstract
A novel way to enhance modulation performance is through the design of a hybrid plasmonic optical modulator that integrates multi-layer graphene and TiO2on silicon waveguides. In this article, a design is presented of a proposed modulator based on the use of the two-dimensional finite difference eigenmode solver, the three-dimensional eigenmode expansion solver, and the CHARGE solver. Leveraging inherent graphene properties and utilizing the subwavelength confinement capabilities of hybrid plasmonic waveguides (HPWs), we achieved a modulator design that is both compact and highly efficient. The electrical bandwidthf3dBis at 460.42 GHz and it reduces energy consumption to 12.17 fJ/bit with a modulator that functions at a wavelength of 1.55μm. According to our simulation results, our innovation was the optimization of the third dielectric layer's thickness, setting the stage to achieve greater modulation depths. This synergy between graphene and HPWs not only augments subwavelength confinement, but also optimizes light-graphene interaction, culminating in a markedly enhanced modulation efficiency. As a result, our modulator presents a high extinction ratio and minimized insertion loss. Furthermore, it exhibits polarization insensitivity and a greater bandwidth. Our work sets a new benchmark in optical communication systems, emphasizing the potential for the next generation of chip-scale with high-efficiency optical modulators that significantly outpace conventional graphene-based designs.
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Affiliation(s)
- Wisut Supasai
- Center of Multidisciplinary Innovation Network Talent (MINT Center), Faculty of Interdisciplinary Studies, Department of Technology and Engineering, Khon Kaen University, Nong Khai Campus, Nong Khai 43000, Thailand
| | - Apirat Siritaratiwat
- Faculty of Engineering, Department of Electrical Engineering, Khon Kaen University, Khon Kaen 40002, Thailand
| | - Chavis Srichan
- Faculty of Engineering, Department of Computer Engineering, Khon Kaen University, Khon Kaen 40002, Thailand
| | - Suksan Suwanarat
- Faculty of Science, Department of Physics, Ramkhamheang University, Bangkok 10240, Thailand
| | - Narong Amorntep
- Faculty of Science, Department of Electronics Technology, Ramkhamheang University, Bangkok 10240, Thailand
| | - Mongkol Wannaprapa
- Faculty of Science, Department of Electronics Technology, Ramkhamheang University, Bangkok 10240, Thailand
| | - Nuttachai Jutong
- Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand
| | - Papichaya Chaisakul
- Department of Physics, Faculty of Science, Kasetsart University, Bangkok 10900, Thailand
| | - Thalerngsak Wiangwiset
- Central Maintenance Sector, National Telecom Public Company Limited, Khon Kaen 40000, Thailand
| | - Sorawit Narkglom
- Faculty of Industrial Technology, Chitralada Technology Institute, Bangkok, 10300, Thailand
| | | | - Chayada Surawanitkun
- Center of Multidisciplinary Innovation Network Talent (MINT Center), Faculty of Interdisciplinary Studies, Department of Technology and Engineering, Khon Kaen University, Nong Khai Campus, Nong Khai 43000, Thailand
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2
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Panova DA, Tselikov GI, Ermolaev GA, Syuy AV, Zimbovskii DS, Kapitanova OO, Yakubovsky DI, Mazitov AB, Kruglov IA, Vyshnevyy AA, Arsenin AV, Volkov VS. Broadband optical properties of Ti 3C 2 MXene revisited. OPTICS LETTERS 2024; 49:25-28. [PMID: 38134143 DOI: 10.1364/ol.503636] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2023] [Accepted: 10/13/2023] [Indexed: 12/24/2023]
Abstract
The exceptional optical, electrical, and mechanical capabilities of layered transition metal carbides, nitrides, and carbonitrides, called MXenes, revolutionized materials science. Among them, Ti3C2 received the most attention owing to the developed synthesis and processing methods, high conductivity, and pronounced plasmonic response. The latter, however, remains controversial with the open question of whether the peak around 800 nm has plasmonic or interband transition origin. To address this issue, we combine spectroscopic ellipsometry and transmittance results with first-principle computations. Their combination reveals that although Ti3C2 is a metal, its optical response becomes plasmonic (Re ε < 0) above 1415 nm, in contrast to the previous understanding. In addition to fundamental significance, this dual dielectric/plasmonic optical response opens a path for theranostic applications, as we demonstrated on the example of Ti3C2 nanospheres. Thus, our study revisits broadband (300-3300 nm) optical constants of Ti3C2 and broadens its application scope in photonics.
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3
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Ermolaev GA, Vyslanko IS, Tselin AP, El-Sayed MA, Tatmyshevskiy MK, Slavich AS, Yakubovsky DI, Mironov MS, Mazitov AB, Eghbali A, Panova DA, Romanov RI, Markeev AM, Kruglov IA, Novikov SM, Vyshnevyy AA, Arsenin AV, Volkov VS. Broadband Optical Properties of Bi 2Se 3. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13091460. [PMID: 37177004 PMCID: PMC10180482 DOI: 10.3390/nano13091460] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2023] [Revised: 04/18/2023] [Accepted: 04/21/2023] [Indexed: 05/15/2023]
Abstract
Materials with high optical constants are of paramount importance for efficient light manipulation in nanophotonics applications. Recent advances in materials science have revealed that van der Waals (vdW) materials have large optical responses owing to strong in-plane covalent bonding and weak out-of-plane vdW interactions. However, the optical constants of vdW materials depend on numerous factors, e.g., synthesis and transfer method. Here, we demonstrate that in a broad spectral range (290-3300 nm) the refractive index n and the extinction coefficient k of Bi2Se3 are almost independent of synthesis technology, with only a ~10% difference in n and k between synthesis approaches, unlike other vdW materials, such as MoS2, which has a ~60% difference between synthesis approaches. As a practical demonstration, we showed, using the examples of biosensors and therapeutic nanoparticles, that this slight difference in optical constants results in reproducible efficiency in Bi2Se3-based photonic devices.
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Affiliation(s)
- Georgy A Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Ivan S Vyslanko
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Andrey P Tselin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Photonics and Quantum Materials Department, Skolkovo Institute of Science and Technology, 3 Nobel Str., Moscow 143026, Russia
| | - Marwa A El-Sayed
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Department of Physics, Faculty of Science, Menoufia University, Shebin El-Koom 32511, Egypt
| | - Mikhail K Tatmyshevskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Aleksandr S Slavich
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Dmitry I Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Mikhail S Mironov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Arslan B Mazitov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Amir Eghbali
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Daria A Panova
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Roman I Romanov
- Department of Solid State Physics and Nanosystems, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 31 Kashirskoe Sh., Moscow 115409, Russia
| | - Andrey M Markeev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Ivan A Kruglov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Center of Fundamental and Applied Research, Dukhov Research Institute of Automatics (VNIIA), 22 Suschevskaya Str., Moscow 127055, Russia
| | - Sergey M Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Andrey A Vyshnevyy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Aleksey V Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Laboratory of Advanced Functional Materials, Yerevan State University, 1 Alek Manukyan Str., Yerevan 0025, Armenia
| | - Valentyn S Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
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4
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Mu H, Smith D, Katkus T, Gailevičius D, Malinauskas M, Nishijima Y, Stoddart PR, Ruan D, Ryu M, Morikawa J, Vasiliev T, Lozovski V, Moraru D, Ng SH, Juodkazis S. Polarisation Control in Arrays of Microlenses and Gratings: Performance in Visible-IR Spectral Ranges. MICROMACHINES 2023; 14:798. [PMID: 37421030 DOI: 10.3390/mi14040798] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2023] [Revised: 03/29/2023] [Accepted: 03/30/2023] [Indexed: 07/09/2023]
Abstract
Microlens arrays (MLAs) which are increasingly popular micro-optical elements in compact integrated optical systems were fabricated using a femtosecond direct laser write (fs-DLW) technique in the low-shrinkage SZ2080TM photoresist. High-fidelity definition of 3D surfaces on IR transparent CaF2 substrates allowed to achieve ∼50% transmittance in the chemical fingerprinting spectral region 2-5 μm wavelengths since MLAs were only ∼10 μm high corresponding to the numerical aperture of 0.3 (the lens height is comparable with the IR wavelength). To combine diffractive and refractive capabilities in miniaturised optical setup, a graphene oxide (GO) grating acting as a linear polariser was also fabricated by fs-DLW by ablation of a 1 μm-thick GO thin film. Such an ultra-thin GO polariser can be integrated with the fabricated MLA to add dispersion control at the focal plane. Pairs of MLAs and GO polarisers were characterised throughout the visible-IR spectral window and numerical modelling was used to simulate their performance. A good match between the experimental results of MLA focusing and simulations was achieved.
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Affiliation(s)
- Haoran Mu
- Optical Sciences Centre, Australian Research Council (ARC) Industrial Transformation Training Centre in Surface Engineering for Advanced Materials (SEAM), Swinburne University of Technology, Hawthorn, VIC 3122, Australia
| | - Daniel Smith
- Optical Sciences Centre, Australian Research Council (ARC) Industrial Transformation Training Centre in Surface Engineering for Advanced Materials (SEAM), Swinburne University of Technology, Hawthorn, VIC 3122, Australia
| | - Tomas Katkus
- Optical Sciences Centre, Australian Research Council (ARC) Industrial Transformation Training Centre in Surface Engineering for Advanced Materials (SEAM), Swinburne University of Technology, Hawthorn, VIC 3122, Australia
| | - Darius Gailevičius
- Laser Research Center, Physics Faculty, Vilnius University, Sauletekio Ave. 10, LT-10222 Vilnius, Lithuania
| | - Mangirdas Malinauskas
- Laser Research Center, Physics Faculty, Vilnius University, Sauletekio Ave. 10, LT-10222 Vilnius, Lithuania
| | - Yoshiaki Nishijima
- Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
- Institute of Advanced Sciences, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
| | - Paul R Stoddart
- School of Science, Computing and Engineering Technologies, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
| | - Dong Ruan
- School of Engineering, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
| | - Meguya Ryu
- National Metrology Institute of Japan (NMIJ), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 3, 1-1-1 Umezono, Tsukuba 305-8563, Japan
| | - Junko Morikawa
- WRH Program International Research Frontiers Initiative (IRFI), Tokyo Institute of Technology, Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
- CREST-JST, School of Materials and Chemical Technology, Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo 152-8550, Japan
| | - Taras Vasiliev
- Institute of High Technologies, Taras Shevchenko National University of Kyiv, Volodymyrska Str. 60, 01602 Kyiv, Ukraine
| | - Valeri Lozovski
- Institute of High Technologies, Taras Shevchenko National University of Kyiv, Volodymyrska Str. 60, 01602 Kyiv, Ukraine
| | - Daniel Moraru
- Optical Sciences Centre, Australian Research Council (ARC) Industrial Transformation Training Centre in Surface Engineering for Advanced Materials (SEAM), Swinburne University of Technology, Hawthorn, VIC 3122, Australia
- Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Hamamatsu 432-8011, Japan
| | - Soon Hock Ng
- Optical Sciences Centre, Australian Research Council (ARC) Industrial Transformation Training Centre in Surface Engineering for Advanced Materials (SEAM), Swinburne University of Technology, Hawthorn, VIC 3122, Australia
- Melbourne Centre for Nanofabrication, 151 Wellington Road, Clayton, VIC 3168, Australia
| | - Saulius Juodkazis
- Optical Sciences Centre, Australian Research Council (ARC) Industrial Transformation Training Centre in Surface Engineering for Advanced Materials (SEAM), Swinburne University of Technology, Hawthorn, VIC 3122, Australia
- WRH Program International Research Frontiers Initiative (IRFI), Tokyo Institute of Technology, Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
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5
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El-Sayed MA, Tselin AP, Ermolaev GA, Tatmyshevskiy MK, Slavich AS, Yakubovsky DI, Novikov SM, Vyshnevyy AA, Arsenin AV, Volkov VS. Non-Additive Optical Response in Transition Metal Dichalcogenides Heterostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12244436. [PMID: 36558289 PMCID: PMC9787828 DOI: 10.3390/nano12244436] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2022] [Revised: 12/04/2022] [Accepted: 12/09/2022] [Indexed: 05/27/2023]
Abstract
Van der Waals (vdW) heterostructures pave the way to achieve the desired material properties for a variety of applications. In this way, new scientific and industrial challenges and fundamental questions arise. One of them is whether vdW materials preserve their original optical response when assembled in a heterostructure. Here, we resolve this issue for four exemplary monolayer heterostructures: MoS2/Gr, MoS2/hBN, WS2/Gr, and WS2/hBN. Through joint Raman, ellipsometry, and reflectance spectroscopies, we discovered that heterostructures alter MoS2 and WS2 optical constants. Furthermore, despite the similarity of MoS2 and WS2 monolayers, their behavior in heterostructures is markedly different. While MoS2 has large changes, particularly above 3 eV, WS2 experiences modest changes in optical constants. We also detected a transformation from dark into bright exciton for MoS2/Gr heterostructure. In summary, our findings provide clear evidence that the optical response of heterostructures is not the sum of optical properties of its constituents.
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Affiliation(s)
- Marwa A. El-Sayed
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Department of Physics, Faculty of Science, Menoufia University, Shebin El-Koom 32511, Egypt
| | - Andrey P. Tselin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Photonics and Quantum Materials Department, Skolkovo Institute of Science and Technology, 3 Nobel, Moscow 143026, Russia
| | - Georgy A. Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Mikhail K. Tatmyshevskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Aleksandr S. Slavich
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Dmitry I. Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Sergey M. Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Andrey A. Vyshnevyy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Aleksey V. Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Valentyn S. Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
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6
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Li D, Lu Y, Zhang C. Superhydrophobic and Electrochemical Performance of CF 2-Modified g-C 3N 4/Graphene Composite Film Deposited by PECVD. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4387. [PMID: 36558242 PMCID: PMC9782866 DOI: 10.3390/nano12244387] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/16/2022] [Revised: 12/06/2022] [Accepted: 12/07/2022] [Indexed: 06/17/2023]
Abstract
The physicochemical properties of functional graphene are regulated by compositing with other nano-carbon materials or modifying functional groups on the surface through plasma processes. The functional graphene films with g-C3N4 and F-doped groups were produced by controlling the deposition steps and plasma gases via radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD). The first principles calculation and electrochemistry characteristic of the functional graphene films were performed on Materials Studio software and an electrochemical workstation, respectively. It is found that the nanostructures of functional graphene films with g-C3N4 and F-doped groups were significantly transformed. The introduction of fluorine atoms led to severe deformation of the g-C3N4 nanostructure, which created gaps in the electrostatic potential of the graphene surface and provided channels for electron transport. The surface of the roving fabric substrate covered by pure graphene is hydrophilic with a static contact angle of 79.4°, but the surface is transformed to a hydrophobic state for the g-C3N4/graphene film with an increased static contact angle of 131.3° which is further improved to 156.2° for CF2-modified g-C3N4/graphene film exhibiting the stable superhydrophobic property. The resistance of the electron movement of CF2-modified g-C3N4/graphene film was reduced by 2% and 76.7%, respectively, compared with graphene and g-C3N4/graphene.
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Affiliation(s)
- Dayu Li
- Correspondence: (D.L.); (C.Z.)
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7
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Liu Z, Wu J, Cai C, Yang B, Qi ZM. Flexible hyperspectral surface plasmon resonance microscopy. Nat Commun 2022; 13:6475. [PMID: 36309515 PMCID: PMC9617892 DOI: 10.1038/s41467-022-34196-7] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2022] [Accepted: 10/13/2022] [Indexed: 12/25/2022] Open
Abstract
Optical techniques for visualization and quantification of chemical and biological analytes are always highly desirable. Here we show a hyperspectral surface plasmon resonance microscopy (HSPRM) system that uses a hyperspectral microscope to analyze the selected area of SPR image produced by a prism-based spectral SPR sensor. The HSPRM system enables monochromatic and polychromatic SPR imaging and single-pixel spectral SPR sensing, as well as two-dimensional quantification of thin films with the measured resonance-wavelength images. We performed pixel-by-pixel calibration of the incident angle to remove pixel-to-pixel differences in SPR sensitivity, and demonstrated the HSPRM's capabilities by using it to quantify monolayer graphene thickness distribution, inhomogeneous protein adsorption and single-cell adhesion. The HSPRM system has a wide spectral range from 400 nm to 1000 nm, an optional field of view from 0.884 mm2 to 0.003 mm2 and a high lateral resolution of 1.2 μm, demonstrating an innovative breakthrough in SPR sensor technology.
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Affiliation(s)
- Ziwei Liu
- grid.9227.e0000000119573309State Key Laboratory of Transducer Technology, Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing, 100190 China ,grid.410726.60000 0004 1797 8419School of Electronic, Electrical, and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Jingning Wu
- grid.9227.e0000000119573309State Key Laboratory of Transducer Technology, Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing, 100190 China ,grid.410726.60000 0004 1797 8419School of Electronic, Electrical, and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Chen Cai
- grid.9227.e0000000119573309State Key Laboratory of Transducer Technology, Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing, 100190 China ,grid.410726.60000 0004 1797 8419School of Electronic, Electrical, and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Bo Yang
- grid.9227.e0000000119573309State Key Laboratory of Transducer Technology, Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing, 100190 China ,grid.410726.60000 0004 1797 8419School of Electronic, Electrical, and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Zhi-mei Qi
- grid.9227.e0000000119573309State Key Laboratory of Transducer Technology, Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing, 100190 China ,grid.410726.60000 0004 1797 8419School of Electronic, Electrical, and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China ,grid.410726.60000 0004 1797 8419School of Optoelectronics, University of Chinese Academy of Sciences, Beijing, 100049 China
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8
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Eghbali A, Vyshnevyy AA, Arsenin AV, Volkov VS. Optical Anisotropy and Excitons in MoS 2 Interfaces for Sensitive Surface Plasmon Resonance Biosensors. BIOSENSORS 2022; 12:582. [PMID: 36004977 PMCID: PMC9405904 DOI: 10.3390/bios12080582] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/23/2022] [Revised: 07/26/2022] [Accepted: 07/27/2022] [Indexed: 06/15/2023]
Abstract
The use of ultra-thin spacer layers above metal has become a popular approach to the enhancement of optical sensitivity and immobilization efficiency of label-free SPR sensors. At the same time, the giant optical anisotropy inherent to transition metal dichalcogenides may significantly affect characteristics of the studied sensors. Here, we present a systematic study of the optical sensitivity of an SPR biosensor platform with auxiliary layers of MoS2. By performing the analysis in a broad spectral range, we reveal the effect of exciton-driven dielectric response of MoS2 and its anisotropy on the sensitivity characteristics. The excitons are responsible for the decrease in the optimal thickness of MoS2. Furthermore, despite the anisotropy being at record height, it affects the sensitivity only slightly, although the effect becomes stronger in the near-infrared spectral range, where it may lead to considerable change in the optimal design of the biosensor.
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9
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Ermolaev G, Voronin K, Baranov DG, Kravets V, Tselikov G, Stebunov Y, Yakubovsky D, Novikov S, Vyshnevyy A, Mazitov A, Kruglov I, Zhukov S, Romanov R, Markeev AM, Arsenin A, Novoselov KS, Grigorenko AN, Volkov V. Topological phase singularities in atomically thin high-refractive-index materials. Nat Commun 2022; 13:2049. [PMID: 35440544 PMCID: PMC9019097 DOI: 10.1038/s41467-022-29716-4] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/20/2021] [Accepted: 03/17/2022] [Indexed: 11/23/2022] Open
Abstract
Atomically thin transition metal dichalcogenides (TMDCs) present a promising platform for numerous photonic applications due to excitonic spectral features, possibility to tune their constants by external gating, doping, or light, and mechanical stability. Utilization of such materials for sensing or optical modulation purposes would require a clever optical design, as by itself the 2D materials can offer only a small optical phase delay - consequence of the atomic thickness. To address this issue, we combine films of 2D semiconductors which exhibit excitonic lines with the Fabry-Perot resonators of the standard commercial SiO2/Si substrate, in order to realize topological phase singularities in reflection. Around these singularities, reflection spectra demonstrate rapid phase changes while the structure behaves as a perfect absorber. Furthermore, we demonstrate that such topological phase singularities are ubiquitous for the entire class of atomically thin TMDCs and other high-refractive-index materials, making it a powerful tool for phase engineering in flat optics. As a practical demonstration, we employ PdSe2 topological phase singularities for a refractive index sensor and demonstrate its superior phase sensitivity compared to typical surface plasmon resonance sensors.
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Affiliation(s)
- Georgy Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia
| | - Kirill Voronin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia
| | - Denis G Baranov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia
| | - Vasyl Kravets
- Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Gleb Tselikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia
| | - Yury Stebunov
- National Graphene Institute (NGI), University of Manchester, Manchester, M13 9PL, UK
| | - Dmitry Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia
| | - Sergey Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia
| | - Andrey Vyshnevyy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia
| | - Arslan Mazitov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia
- Dukhov Research Institute of Automatics (VNIIA), Moscow, 127055, Russia
| | - Ivan Kruglov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia
- Dukhov Research Institute of Automatics (VNIIA), Moscow, 127055, Russia
| | - Sergey Zhukov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia
| | - Roman Romanov
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow, 115409, Russia
| | - Andrey M Markeev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia
| | - Aleksey Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia
- GrapheneTek, Moscow, 109004, Russia
| | - Kostya S Novoselov
- National Graphene Institute (NGI), University of Manchester, Manchester, M13 9PL, UK
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 03-09 EA, Singapore
- Chongqing 2D Materials Institute, 400714, Chongqing, China
| | | | - Valentyn Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia.
- XPANCEO, Moscow, 127495, Russia.
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10
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Ermolaev GA, Yakubovsky DI, El-Sayed MA, Tatmyshevskiy MK, Mazitov AB, Popkova AA, Antropov IM, Bessonov VO, Slavich AS, Tselikov GI, Kruglov IA, Novikov SM, Vyshnevyy AA, Fedyanin AA, Arsenin AV, Volkov VS. Broadband Optical Constants and Nonlinear Properties of SnS 2 and SnSe 2. NANOMATERIALS 2021; 12:nano12010141. [PMID: 35010091 PMCID: PMC8746438 DOI: 10.3390/nano12010141] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/05/2021] [Revised: 12/24/2021] [Accepted: 12/28/2021] [Indexed: 11/16/2022]
Abstract
SnS2 and SnSe2 have recently been shown to have a wide range of applications in photonic and optoelectronic devices. However, because of incomplete knowledge about their optical characteristics, the use of SnS2 and SnSe2 in optical engineering remains challenging. Here, we addressed this problem by establishing SnS2 and SnSe2 linear and nonlinear optical properties in the broad (300-3300 nm) spectral range. Coupled with the first-principle calculations, our experimental study unveiled the full dielectric tensor of SnS2 and SnSe2. Furthermore, we established that SnS2 is a promising material for visible high refractive index nanophotonics. Meanwhile, SnSe2 demonstrates a stronger nonlinear response compared with SnS2. Our results create a solid ground for current and next-generation SnS2- and SnSe2-based devices.
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Affiliation(s)
- Georgy A. Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Dmitry I. Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Marwa A. El-Sayed
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Department of Physics, Faculty of Science, Menoufia University, Shebin El-Koom 32511, Egypt
| | - Mikhail K. Tatmyshevskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Arslan B. Mazitov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Dukhov Research Institute of Automatics (VNIIA), 22 Suschevskaya St., 127055 Moscow, Russia
| | - Anna A. Popkova
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia; (A.A.P.); (I.M.A.); (V.O.B.); (A.A.F.)
| | - Ilya M. Antropov
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia; (A.A.P.); (I.M.A.); (V.O.B.); (A.A.F.)
| | - Vladimir O. Bessonov
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia; (A.A.P.); (I.M.A.); (V.O.B.); (A.A.F.)
| | - Aleksandr S. Slavich
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Gleb I. Tselikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Ivan A. Kruglov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Dukhov Research Institute of Automatics (VNIIA), 22 Suschevskaya St., 127055 Moscow, Russia
| | - Sergey M. Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Andrey A. Vyshnevyy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Andrey A. Fedyanin
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia; (A.A.P.); (I.M.A.); (V.O.B.); (A.A.F.)
| | - Aleksey V. Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Valentyn S. Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Correspondence: or ; Tel.: +7-926-735-93-98
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11
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Ermolaev GA, Voronin KV, Tatmyshevskiy MK, Mazitov AB, Slavich AS, Yakubovsky DI, Tselin AP, Mironov MS, Romanov RI, Markeev AM, Kruglov IA, Novikov SM, Vyshnevyy AA, Arsenin AV, Volkov VS. Broadband Optical Properties of Atomically Thin PtS 2 and PtSe 2. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:3269. [PMID: 34947618 PMCID: PMC8708229 DOI: 10.3390/nano11123269] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/04/2021] [Revised: 11/21/2021] [Accepted: 11/29/2021] [Indexed: 01/31/2023]
Abstract
Noble transition metal dichalcogenides (TMDCs) such as PtS2 and PtSe2 show significant potential in a wide range of optoelectronic and photonic applications. Noble TMDCs, unlike standard TMDCs such as MoS2 and WS2, operate in the ultrawide spectral range from ultraviolet to mid-infrared wavelengths; however, their properties remain largely unexplored. Here, we measured the broadband (245-3300 nm) optical constants of ultrathin PtS2 and PtSe2 films to eliminate this gap and provide a foundation for optoelectronic device simulation. We discovered their broadband absorption and high refractive index both theoretically and experimentally. Based on first-principle calculations, we also predicted their giant out-of-plane optical anisotropy for monocrystals. As a practical illustration of the obtained optical properties, we demonstrated surface plasmon resonance biosensors with PtS2 or PtSe2 functional layers, which dramatically improves sensor sensitivity by 60 and 30%, respectively.
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Affiliation(s)
- Georgy A. Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Kirill V. Voronin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Mikhail K. Tatmyshevskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Arslan B. Mazitov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Dukhov Research Institute of Automatics (VNIIA), 22 Suschevskaya St., 127055 Moscow, Russia
| | - Aleksandr S. Slavich
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Dmitry I. Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Andrey P. Tselin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Mikhail S. Mironov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Roman I. Romanov
- Moscow Engineering Physics Institute, National Research Nuclear University MEPhI, 31 Kashirskoe Sh., 115409 Moscow, Russia;
| | - Andrey M. Markeev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Ivan A. Kruglov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Dukhov Research Institute of Automatics (VNIIA), 22 Suschevskaya St., 127055 Moscow, Russia
| | - Sergey M. Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Andrey A. Vyshnevyy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Aleksey V. Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- GrapheneTek, Skolkovo Innovation Center, 143026 Moscow, Russia
| | - Valentyn S. Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- GrapheneTek, Skolkovo Innovation Center, 143026 Moscow, Russia
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12
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Tatmyshevskiy MK, Yakubovsky DI, Kapitanova OO, Solovey VR, Vyshnevyy AA, Ermolaev GA, Klishin YA, Mironov MS, Voronov AA, Arsenin AV, Volkov VS, Novikov SM. Hybrid Metal-Dielectric-Metal Sandwiches for SERS Applications. NANOMATERIALS 2021; 11:nano11123205. [PMID: 34947554 PMCID: PMC8708964 DOI: 10.3390/nano11123205] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/05/2021] [Revised: 11/20/2021] [Accepted: 11/23/2021] [Indexed: 11/28/2022]
Abstract
The development of efficient plasmonic nanostructures with controlled and reproducible surface-enhanced Raman spectroscopy (SERS) signals is an important task for the evolution of ultrasensitive sensor-related methods. One of the methods to improving the characteristics of nanostructures is the development of hybrid structures that include several types of materials. Here, we experimentally investigate ultrathin gold films (3–9 nm) near the percolation threshold on Si/Au/SiO2 and Si/Au/SiO2/graphene multilayer structures. The occurring field enhanced (FE) effects were characterized by a recording of SERS signal from Crystal Violet dye. In this geometry, the overall FE principally benefits from the combination of two mechanisms. The first one is associated with plasmon excitation in Au clusters located closest to each other. The second is due to the gap plasmons’ excitation in a thin dielectric layer between the mirror and corrugated gold layers. Experimentally obtained SERS signals from sandwiched structures fabricated with Au film of 100 nm as a reflector, dielectric SiO2 spacer of 50 nm and ultrathin gold atop could reach SERS enhancements of up to around seven times relative to gold films near the percolation threshold deposited on a standard glass substrate. The close contiguity of the analyte to graphene and nanostructured Au efficiently quenches the fluorescent background of the model compound. The obtained result shows that the strategy of combining ultrathin nano-island gold films near the percolation threshold with gap plasmon resonances is promising for the design of highly efficient SERS substrates for potential applications in ultrasensitive Raman detection.
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Affiliation(s)
- Mikhail K. Tatmyshevskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
- Correspondence: (M.K.T.); (S.M.N.); Tel.: +7-9056137678 (M.K.T.); +7-9032360487 (S.M.N.)
| | - Dmitry I. Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Olesya O. Kapitanova
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
- Department of Chemistry, Lomonosov Moscow State University, 1-3 Leninskiye Gory, 119991 Moscow, Russia
| | - Valentin R. Solovey
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Andrey A. Vyshnevyy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Georgy A. Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Yuri A. Klishin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Mikhail S. Mironov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Artem A. Voronov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Aleksey V. Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Valentyn S. Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Sergey M. Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
- Correspondence: (M.K.T.); (S.M.N.); Tel.: +7-9056137678 (M.K.T.); +7-9032360487 (S.M.N.)
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