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Prasad MK, Taverne MPC, Huang CC, Mar JD, Ho YLD. Hexagonal Boron Nitride Based Photonic Quantum Technologies. MATERIALS (BASEL, SWITZERLAND) 2024; 17:4122. [PMID: 39203299 PMCID: PMC11356713 DOI: 10.3390/ma17164122] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/10/2024] [Revised: 08/02/2024] [Accepted: 08/13/2024] [Indexed: 09/03/2024]
Abstract
Hexagonal boron nitride is rapidly gaining interest as a platform for photonic quantum technologies, due to its two-dimensional nature and its ability to host defects deep within its large band gap that may act as room-temperature single-photon emitters. In this review paper we provide an overview of (1) the structure, properties, growth and transfer of hexagonal boron nitride; (2) the creationof colour centres in hexagonal boron nitride and assignment of defects by comparison with ab initio calculations for applications in photonic quantum technologies; and (3) heterostructure devices for the electrical tuning and charge control of colour centres that form the basis for photonic quantum technology devices. The aim of this review is to provide readers a summary of progress in both defect engineering and device fabrication in hexagonal boron nitride based photonic quantum technologies.
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Affiliation(s)
- Madhava Krishna Prasad
- Joint Quantum Centre (JQC) Durham-Newcastle, School of Mathematics, Statistics and Physics, Newcastle University, Newcastle upon Tyne NE1 7RU, UK;
| | - Mike P. C. Taverne
- Department of Mathematics, Physics & Electrical Engineering, Northumbria University, Newcastle upon Tyne NE1 8ST, UK; (M.P.C.T.); (Y.-L.D.H.)
- Department of Electrical and Electronic Engineering, University of Bristol, Bristol BS8 1UB, UK
| | - Chung-Che Huang
- Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK
| | - Jonathan D. Mar
- Joint Quantum Centre (JQC) Durham-Newcastle, School of Mathematics, Statistics and Physics, Newcastle University, Newcastle upon Tyne NE1 7RU, UK;
| | - Ying-Lung Daniel Ho
- Department of Mathematics, Physics & Electrical Engineering, Northumbria University, Newcastle upon Tyne NE1 8ST, UK; (M.P.C.T.); (Y.-L.D.H.)
- Department of Electrical and Electronic Engineering, University of Bristol, Bristol BS8 1UB, UK
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2
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Murzakhanov FF, Sadovnikova MA, Gracheva IN, Mamin GV, Baibekov EI, Mokhov EN. Exploring the properties of theVB-defect in hBN: optical spin polarization, Rabi oscillations, and coherent nuclei modulation. NANOTECHNOLOGY 2024; 35:155001. [PMID: 38154127 DOI: 10.1088/1361-6528/ad1940] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Accepted: 12/27/2023] [Indexed: 12/30/2023]
Abstract
Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gapEg= 6 eV, containing a negatively charged boron vacancy (VB-) with unique spin, optical, and coherent properties presents a new two-dimensional platform for the implementation of quantum technologies. This work establishes the value ofVB-spin polarization under optical pumping withλext= 532 nm laser using high-frequency (νmw= 94 GHz) electron paramagnetic resonance (EPR) spectroscopy. In optimal conditions polarization was found to beP≈ 38.4%. Our study reveals that Rabi oscillations induced on polarized spin states persist for up to 30-40μs, which is nearly two orders of magnitude longer than what was previously reported. Analysis of the coherent electron-nuclear interaction through the observed electron spin echo envelope modulation made it possible to detect signals from remote nitrogen and boron nuclei, and to establish a corresponding quadrupole coupling constantCq= 180 kHz related to nuclear quadrupole moment of14N. These results have fundamental importance for understanding the spin properties of boron vacancy.
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Affiliation(s)
- Fadis F Murzakhanov
- Institute of Physics, Kazan Federal University, Kremlyovskaya 18, Kazan 420008, Russia
| | | | - Irina N Gracheva
- Institute of Physics, Kazan Federal University, Kremlyovskaya 18, Kazan 420008, Russia
| | - Georgy V Mamin
- Institute of Physics, Kazan Federal University, Kremlyovskaya 18, Kazan 420008, Russia
| | - Eduard I Baibekov
- Institute of Physics, Kazan Federal University, Kremlyovskaya 18, Kazan 420008, Russia
| | - Evgeniy N Mokhov
- Ioffe Institute, Polytekhnicheskaya, 26, St Petersburg 194021, Russia
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3
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Zabelotsky T, Singh S, Haim G, Malkinson R, Kadkhodazadeh S, Radko IP, Aharonovich I, Steinberg H, Berg-Sørensen K, Huck A, Taniguchi T, Watanabe K, Bar-Gill N. Creation of Boron Vacancies in Hexagonal Boron Nitride Exfoliated from Bulk Crystals for Quantum Sensing. ACS APPLIED NANO MATERIALS 2023; 6:21671-21678. [PMID: 38835900 PMCID: PMC11145586 DOI: 10.1021/acsanm.3c03395] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/09/2023] [Revised: 11/01/2023] [Accepted: 11/05/2023] [Indexed: 06/06/2024]
Abstract
Boron vacancies (VB-) in hexagonal boron -nitride (hBN) have sparked great interest in recent years due to their optical and spin properties. Since hBN can be readily integrated into devices where it interfaces a huge variety of other 2D materials, boron vacancies may serve as a precise sensor which can be deployed at very close proximity to many important materials systems. Boron vacancy defects may be produced by a number of existing methods, the use of which may depend on the final application. Any method should reproducibly generate defects with controlled density and desired pattern. To date, however, detailed studies of such methods are missing. In this paper, we study various techniques for the preparation of hBN flakes from bulk crystals and relevant postprocessing treatments, namely, focused ion beam (FIB) implantation, for creation of VB-s as a function of flake thickness and defect concentrations. We find that flake thickness plays an important role when optimizing implantation parameters, while careful sample cleaning proved important to achieve consistent results.
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Affiliation(s)
- Ty Zabelotsky
- The
Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The
Institute of Applied Physics, The Hebrew
University of Jerusalem, Jerusalem 91904, Israel
| | - Sourabh Singh
- The
Racah Institute of Physics, The Hebrew University
of Jerusalem, Jerusalem 91904, Israel
| | - Galya Haim
- The
Institute of Applied Physics, The Hebrew
University of Jerusalem, Jerusalem 91904, Israel
- School
of Physics, The University of Melbourne, Parkville, Victoria 3010, Australia
| | - Rotem Malkinson
- The
Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The
Institute of Applied Physics, The Hebrew
University of Jerusalem, Jerusalem 91904, Israel
| | - Shima Kadkhodazadeh
- DTU
Nanolab, Technical University of Denmark, Fysikvej, Kongens, Lyngby, 2800, Denmark
| | - Ilya P. Radko
- Department
of Physics, Technical University of Denmark, Kongens, Lyngby, 2800, Denmark
| | - Igor Aharonovich
- School
of Mathematical and Physical Sciences, University
of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC
Centre of Excellence for Transformative Meta-Optical Systems (TMOS),
Faculty of Science, University of Technology
Sydney, Ultimo, New South Wales 2007, Australia
| | - Hadar Steinberg
- The
Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The
Racah Institute of Physics, The Hebrew University
of Jerusalem, Jerusalem 91904, Israel
| | - Kirstine Berg-Sørensen
- Department
of Health Technology, Technical University
of Denmark, Kongens, Lyngby 2800, Denmark
| | - Alexander Huck
- Center
for Macroscopic Quantum States (bigQ), Department of Physics, Technical University of Denmark, 2800 Kongens, Lyngby, Denmark
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Nir Bar-Gill
- The
Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The
Institute of Applied Physics, The Hebrew
University of Jerusalem, Jerusalem 91904, Israel
- The
Racah Institute of Physics, The Hebrew University
of Jerusalem, Jerusalem 91904, Israel
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4
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Zeng XD, Yang YZ, Guo NJ, Li ZP, Wang ZA, Xie LK, Yu S, Meng Y, Li Q, Xu JS, Liu W, Wang YT, Tang JS, Li CF, Guo GC. Reflective dielectric cavity enhanced emission from hexagonal boron nitride spin defect arrays. NANOSCALE 2023; 15:15000-15007. [PMID: 37665054 DOI: 10.1039/d3nr03486k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/05/2023]
Abstract
Among the various kinds of spin defects in hexagonal boron nitride (hBN), the negatively charged boron vacancy (VB-) spin defect that can be site-specifically generated is undoubtedly a potential candidate for quantum sensing, but its low quantum efficiency restricts its practical applications. Here, we demonstrate a robust enhancement structure called reflective dielectric cavity (RDC) with advantages including easy on-chip integration, convenient processing, low cost and suitable broad-spectrum enhancement for VB- defects. In the experiment, we used a metal reflective layer under the hBN flakes, filled with a transition dielectric layer in the middle, and adjusted the thickness of the dielectric layer to achieve the best coupling between RDC and spin defects in hBN. A remarkable 11-fold enhancement in the fluorescence intensity of VB- spin defects in hBN flakes can be achieved. By designing the metal layer into a waveguide structure, high-contrast optically detected magnetic resonance (ODMR) signal (∼21%) can be obtained. The oxide layer of the RDC can be used as the integrated material to implement secondary processing of micro-nano photonic devices, which means that it can be combined with other enhancement structures to achieve stronger enhancement. This work has guiding significance for realizing the on-chip integration of spin defects in two-dimensional materials.
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Affiliation(s)
- Xiao-Dong Zeng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yuan-Ze Yang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Nai-Jie Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhi-Peng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhao-An Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Lin-Ke Xie
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Shang Yu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yu Meng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Qiang Li
- Institute of Advanced Semiconductors and Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, China
- State Key Laboratory of Silicon Materials and Advanced Semiconductors and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
| | - Wei Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yi-Tao Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
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5
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Durand A, Clua-Provost T, Fabre F, Kumar P, Li J, Edgar JH, Udvarhelyi P, Gali A, Marie X, Robert C, Gérard JM, Gil B, Cassabois G, Jacques V. Optically Active Spin Defects in Few-Layer Thick Hexagonal Boron Nitride. PHYSICAL REVIEW LETTERS 2023; 131:116902. [PMID: 37774304 DOI: 10.1103/physrevlett.131.116902] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Accepted: 08/22/2023] [Indexed: 10/01/2023]
Abstract
Optically active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to the sample being probed. In this Letter, we first demonstrate that the electron spin resonance frequencies of boron vacancy centers (V_{B}^{-}) can be detected optically in the limit of few-atomic-layer thick hBN flakes despite the nanoscale proximity of the crystal surface that often leads to a degradation of the stability of solid-state spin defects. We then analyze the variations of the electronic spin properties of V_{B}^{-} centers with the hBN thickness with a focus on (i) the zero-field splitting parameters, (ii) the optically induced spin polarization rate and (iii) the longitudinal spin relaxation time. This Letter provides important insights into the properties of V_{B}^{-} centers embedded in ultrathin hBN flakes, which are valuable for future developments of foil-based quantum sensing technologies.
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Affiliation(s)
- A Durand
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - T Clua-Provost
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - F Fabre
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - P Kumar
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - J Li
- Tim Taylor Department of Chemical Engineering, Kansas State University, Kansas 66506, USA
| | - J H Edgar
- Tim Taylor Department of Chemical Engineering, Kansas State University, Kansas 66506, USA
| | - P Udvarhelyi
- Department of Atomic Physics, Budapest University of Technology and Economics, H-1111 Budapest, Hungary
| | - A Gali
- Department of Atomic Physics, Budapest University of Technology and Economics, H-1111 Budapest, Hungary
- Wigner Research Centre for Physics, P.O. Box 49, H-1525 Budapest, Hungary
| | - X Marie
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - C Robert
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - J M Gérard
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - B Gil
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - G Cassabois
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - V Jacques
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
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6
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Kim SH, Park KH, Lee YG, Kang SJ, Park Y, Kim YD. Color Centers in Hexagonal Boron Nitride. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2344. [PMID: 37630929 PMCID: PMC10458833 DOI: 10.3390/nano13162344] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 08/10/2023] [Accepted: 08/13/2023] [Indexed: 08/27/2023]
Abstract
Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultraviolet optoelectronics. This is primarily due to its remarkable physical properties and ultrawide bandgap (close to 6 eV, and even larger in some cases) properties. Color centers in hBN refer to intrinsic vacancies and extrinsic impurities within the 2D crystal lattice, which result in distinct optical properties in the ultraviolet (UV) to near-infrared (IR) range. Furthermore, each color center in hBN exhibits a unique emission spectrum and possesses various spin properties. These characteristics open up possibilities for the development of next-generation optoelectronics and quantum information applications, including room-temperature single-photon sources and quantum sensors. Here, we provide a comprehensive overview of the atomic configuration, optical and quantum properties, and different techniques employed for the formation of color centers in hBN. A deep understanding of color centers in hBN allows for advances in the development of next-generation UV optoelectronic applications, solid-state quantum technologies, and nanophotonics by harnessing the exceptional capabilities offered by hBN color centers.
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Affiliation(s)
- Suk Hyun Kim
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
- Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea
| | - Kyeong Ho Park
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
| | - Young Gie Lee
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
| | - Seong Jun Kang
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17101, Republic of Korea;
| | - Yongsup Park
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
- Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea
| | - Young Duck Kim
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
- Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea
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7
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Robertson IO, Scholten SC, Singh P, Healey AJ, Meneses F, Reineck P, Abe H, Ohshima T, Kianinia M, Aharonovich I, Tetienne JP. Detection of Paramagnetic Spins with an Ultrathin van der Waals Quantum Sensor. ACS NANO 2023. [PMID: 37406158 DOI: 10.1021/acsnano.3c01678] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/07/2023]
Abstract
Detecting magnetic noise from small quantities of paramagnetic spins is a powerful capability for chemical, biochemical, and medical analysis. Quantum sensors based on optically addressable spin defects in bulk semiconductors are typically employed for such purposes, but the 3D crystal structure of the sensor inhibits sensitivity by limiting the proximity of the defects to the target spins. Here we demonstrate the detection of paramagnetic spins using spin defects hosted in hexagonal boron nitride (hBN), a van der Waals material that can be exfoliated into the 2D regime. We first create negatively charged boron vacancy (VB-) defects in a powder of ultrathin hBN nanoflakes (<10 atomic monolayers thick on average) and measure the longitudinal spin relaxation time (T1) of this system. We then decorate the dry hBN nanopowder with paramagnetic Gd3+ ions and observe a clear T1 quenching under ambient conditions, consistent with the added magnetic noise. Finally, we demonstrate the possibility of performing spin measurements, including T1 relaxometry using solution-suspended hBN nanopowder. Our results highlight the potential and versatility of the hBN quantum sensor for a range of sensing applications and make steps toward the realization of a truly 2D, ultrasensitive quantum sensor.
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Affiliation(s)
- Islay O Robertson
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Sam C Scholten
- School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Priya Singh
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Alexander J Healey
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
- School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Fernando Meneses
- School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Philipp Reineck
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
- ARC Centre of Excellence for Nanoscale BioPhotonics, RMIT University, Melbourne, Victoria 3001, Australia
| | - Hiroshi Abe
- National Institutes for Quantum Science and Technology (QST), 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
| | - Takeshi Ohshima
- National Institutes for Quantum Science and Technology (QST), 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
- Department of Materials Science, Tohoku University, Sendai, 980-8579, Japan
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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8
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Guo NJ, Li S, Liu W, Yang YZ, Zeng XD, Yu S, Meng Y, Li ZP, Wang ZA, Xie LK, Ge RC, Wang JF, Li Q, Xu JS, Wang YT, Tang JS, Gali A, Li CF, Guo GC. Coherent control of an ultrabright single spin in hexagonal boron nitride at room temperature. Nat Commun 2023; 14:2893. [PMID: 37210408 DOI: 10.1038/s41467-023-38672-6] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2022] [Accepted: 05/10/2023] [Indexed: 05/22/2023] Open
Abstract
Hexagonal boron nitride (hBN) is a remarkable two-dimensional (2D) material that hosts solid-state spins and has great potential to be used in quantum information applications, including quantum networks. However, in this application, both the optical and spin properties are crucial for single spins but have not yet been discovered simultaneously for hBN spins. Here, we realize an efficient method for arraying and isolating the single defects of hBN and use this method to discover a new spin defect with a high probability of 85%. This single defect exhibits outstanding optical properties and an optically controllable spin, as indicated by the observed significant Rabi oscillation and Hahn echo experiments at room temperature. First principles calculations indicate that complexes of carbon and oxygen dopants may be the origin of the single spin defects. This provides a possibility for further addressing spins that can be optically controlled.
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Affiliation(s)
- Nai-Jie Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Song Li
- Wigner Research Centre for Physics, Post Office Box 49, H-1525Budapest, Hungary
| | - Wei Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Yuan-Ze Yang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Xiao-Dong Zeng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Shang Yu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Yu Meng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Zhi-Peng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Zhao-An Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Lin-Ke Xie
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Rong-Chun Ge
- College of Physics, Sichuan University, Chengdu, 610064, China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
- College of Physics, Sichuan University, Chengdu, 610064, China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Yi-Tao Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China.
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China.
| | - Adam Gali
- Wigner Research Centre for Physics, Post Office Box 49, H-1525Budapest, Hungary.
- Department of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, Muegyetem rakpart 3, H-1111Budapest, Hungary.
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China.
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
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9
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Bianco F, Corte E, Ditalia Tchernij S, Forneris J, Fabbri F. Engineering Multicolor Radiative Centers in hBN Flakes by Varying the Electron Beam Irradiation Parameters. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:739. [PMID: 36839108 PMCID: PMC9960900 DOI: 10.3390/nano13040739] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Revised: 02/10/2023] [Accepted: 02/13/2023] [Indexed: 06/18/2023]
Abstract
Recently, hBN has become an interesting platform for quantum optics due to the peculiar defect-related luminescence properties. In this work, multicolor radiative emissions are engineered and tailored by position-controlled low-energy electron irradiation. Varying the irradiation parameters, such as the electron beam energy and/or area dose, we are able to induce light emissions at different wavelengths in the green-red range. In particular, the 10 keV and 20 keV irradiation levels induce the appearance of broad emission in the orange-red range (600-660 nm), while 15 keV gives rise to a sharp emission in the green range (535 nm). The cumulative dose density increase demonstrates the presence of a threshold value. The overcoming of the threshold, which is different for each electron beam energy level, causes the generation of non-radiative recombination pathways.
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Affiliation(s)
- Federica Bianco
- NEST Laboratory, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Emilio Corte
- Physics Department, University of Torino and Istituto Nazionale di Fisica Nucleare Sez. Torino, Via P. Giuria 11, 10125 Torino, Italy
| | - Sviatoslav Ditalia Tchernij
- Physics Department, University of Torino and Istituto Nazionale di Fisica Nucleare Sez. Torino, Via P. Giuria 11, 10125 Torino, Italy
| | - Jacopo Forneris
- Physics Department, University of Torino and Istituto Nazionale di Fisica Nucleare Sez. Torino, Via P. Giuria 11, 10125 Torino, Italy
| | - Filippo Fabbri
- NEST Laboratory, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
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10
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Aharonovich I, Tetienne JP, Toth M. Quantum Emitters in Hexagonal Boron Nitride. NANO LETTERS 2022; 22:9227-9235. [PMID: 36413674 DOI: 10.1021/acs.nanolett.2c03743] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Hexagonal boron nitride (hBN) has emerged as a fascinating platform to explore quantum emitters and their applications. Beyond being a wide-bandgap material, it is also a van der Waals crystal, enabling direct exfoliation of atomically thin layers─a combination which offers unique advantages over bulk, 3D crystals. In this Mini Review we discuss the unique properties of hBN quantum emitters and highlight progress toward their future implementation in practical devices. We focus on engineering and integration of the emitters with scalable photonic resonators. We also highlight recently discovered spin defects in hBN and discuss their potential utility for quantum sensing. All in all, hBN has become a front runner in explorations of solid-state quantum science with promising future prospects.
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Affiliation(s)
- Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | | | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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11
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Curie D, Krogel JT, Cavar L, Solanki A, Upadhyaya P, Li T, Pai YY, Chilcote M, Iyer V, Puretzky A, Ivanov I, Du MH, Reboredo F, Lawrie B. Correlative Nanoscale Imaging of Strained hBN Spin Defects. ACS APPLIED MATERIALS & INTERFACES 2022; 14:41361-41368. [PMID: 36048915 DOI: 10.1021/acsami.2c11886] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Spin defects like the negatively charged boron vacancy color center (VB-) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, the effect of strain on VB- color centers in hBN is revealed with correlative cathodoluminescence and photoluminescence microscopies. Strong localized enhancement and redshifting of the VB- luminescence is observed at creases, consistent with density functional theory calculations showing VB- migration toward regions with moderate uniaxial compressive strain. The ability to manipulate spin defects with highly localized strain is critical to the development of practical 2D quantum devices and quantum sensors.
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Affiliation(s)
- David Curie
- Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Jaron T Krogel
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Lukas Cavar
- Department of Physics, Indiana University, Bloomington, Indiana 47405, United States
| | - Abhishek Solanki
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Pramey Upadhyaya
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Tongcang Li
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States
| | - Yun-Yi Pai
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Quantum Science Center, Oak Ridge, Tennessee 37831, United States
| | - Michael Chilcote
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Quantum Science Center, Oak Ridge, Tennessee 37831, United States
| | - Vasudevan Iyer
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Alexander Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Ilia Ivanov
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Mao-Hua Du
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Fernando Reboredo
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Benjamin Lawrie
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Quantum Science Center, Oak Ridge, Tennessee 37831, United States
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12
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Murzakhanov FF, Mamin GV, Orlinskii SB, Gerstmann U, Schmidt WG, Biktagirov T, Aharonovich I, Gottscholl A, Sperlich A, Dyakonov V, Soltamov VA. Electron-Nuclear Coherent Coupling and Nuclear Spin Readout through Optically Polarized V B- Spin States in hBN. NANO LETTERS 2022; 22:2718-2724. [PMID: 35357842 DOI: 10.1021/acs.nanolett.1c04610] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Coherent coupling of defect spins with surrounding nuclei along with the endowment to read out the latter are basic requirements for an application in quantum technologies. We show that negatively charged boron vacancies (VB-) in hexagonal boron nitride (hBN) meet these prerequisites. We demonstrate Hahn-echo coherence of the VB- spin with a characteristic decay time Tcoh = 15 μs, close to the theoretically predicted limit of 18 μs for defects in hBN. Elongation of the coherence time up to 36 μs is demonstrated by means of the Carr-Purcell-Meiboom-Gill decoupling technique. Modulation of the Hahn-echo decay is shown to be induced by coherent coupling of the VB- spin with the three nearest 14N nuclei via a nuclear quadrupole interaction of 2.11 MHz. DFT calculation confirms that the electron-nuclear coupling is confined to the defective layer and stays almost unchanged with a transition from the bulk to the single layer.
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Affiliation(s)
| | | | | | - Uwe Gerstmann
- Theoretische Materialphysik, Universität Paderborn, 33098 Paderborn, Germany
| | - Wolf Gero Schmidt
- Theoretische Materialphysik, Universität Paderborn, 33098 Paderborn, Germany
| | - Timur Biktagirov
- Theoretische Materialphysik, Universität Paderborn, 33098 Paderborn, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Andreas Gottscholl
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Andreas Sperlich
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Vladimir Dyakonov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
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13
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Yang T, Mendelson N, Li C, Gottscholl A, Scott J, Kianinia M, Dyakonov V, Toth M, Aharonovich I. Spin defects in hexagonal boron nitride for strain sensing on nanopillar arrays. NANOSCALE 2022; 14:5239-5244. [PMID: 35315850 DOI: 10.1039/d1nr07919k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional hexagonal boron nitride (hBN) has attracted much attention as a platform for studies of light-matter interactions at the nanoscale, especially in quantum nanophotonics. Recent efforts have focused on spin defects, specifically negatively charged boron vacancy (VB-) centers. Here, we demonstrate a scalable method to enhance the VB- emission using an array of SiO2 nanopillars. We achieve a 4-fold increase in photoluminescence (PL) intensity, and a corresponding 4-fold enhancement in optically detected magnetic resonance (ODMR) contrast. Furthermore, the VB- ensembles provide useful information about the strain fields associated with the strained hBN at the nanopillar sites. Our results provide an accessible way to increase the emission intensity as well as the ODMR contrast of the VB- defects, while simultaneously form a basis for miniaturized quantum sensors in layered heterostructures.
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Affiliation(s)
- Tieshan Yang
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Noah Mendelson
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - Chi Li
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - Andreas Gottscholl
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - John Scott
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - Vladimir Dyakonov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - Milos Toth
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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14
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Guo NJ, Liu W, Li ZP, Yang YZ, Yu S, Meng Y, Wang ZA, Zeng XD, Yan FF, Li Q, Wang JF, Xu JS, Wang YT, Tang JS, Li CF, Guo GC. Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride. ACS OMEGA 2022; 7:1733-1739. [PMID: 35071868 PMCID: PMC8771700 DOI: 10.1021/acsomega.1c04564] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/22/2021] [Accepted: 12/21/2021] [Indexed: 05/30/2023]
Abstract
Optically addressable spin defects in wide-band-gap semiconductors as promising systems for quantum information and sensing applications have recently attracted increased attention. Spin defects in two-dimensional materials are expected to show superiority in quantum sensing due to their atomic thickness. Here, we demonstrate that an ensemble of negatively charged boron vacancies (VB -) with good spin properties in hexagonal boron nitride (hBN) can be generated by ion implantation. We carry out optically detected magnetic resonance measurements at room temperature to characterize the spin properties of ensembles of VB - defects, showing a zero-field splitting frequency of ∼3.47 GHz. We compare the photoluminescence intensity and spin properties of VB - defects generated using different implantation parameters, such as fluence, energy, and ion species. With the use of the proper parameters, we can successfully create VB - defects with a high probability. Our results provide a simple and practicable method to create spin defects in hBN, which is of great significance for realizing integrated hBN-based devices.
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Affiliation(s)
- Nai-Jie Guo
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Wei Liu
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Zhi-Peng Li
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Yuan-Ze Yang
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Shang Yu
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Yu Meng
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Zhao-An Wang
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Xiao-Dong Zeng
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Fei-Fei Yan
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Qiang Li
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Yi-Tao Wang
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
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15
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Gao X, Jiang B, Llacsahuanga Allcca AE, Shen K, Sadi MA, Solanki AB, Ju P, Xu Z, Upadhyaya P, Chen YP, Bhave SA, Li T. High-Contrast Plasmonic-Enhanced Shallow Spin Defects in Hexagonal Boron Nitride for Quantum Sensing. NANO LETTERS 2021; 21:7708-7714. [PMID: 34473524 DOI: 10.1021/acs.nanolett.1c02495] [Citation(s) in RCA: 39] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The recently discovered spin defects in hexagonal boron nitride (hBN), a layered van der Waals material, have great potential in quantum sensing. However, the photoluminescence and the contrast of the optically detected magnetic resonance (ODMR) of hBN spin defects are relatively low so far, which limits their sensitivity. Here we report a record-high ODMR contrast of 46% at room temperature and simultaneous enhancement of the photoluminescence of hBN spin defects by up to 17-fold by the surface plasmon of a gold film microwave waveguide. Our results are obtained with shallow boron vacancy spin defects in hBN nanosheets created by low-energy He+ ion implantation and a gold film microwave waveguide fabricated by photolithography. We also explore the effects of microwave and laser powers on the ODMR and improve the sensitivity of hBN spin defects for magnetic field detection. Our results support the promising potential of hBN spin defects for nanoscale quantum sensing.
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Affiliation(s)
- Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States
| | - Boyang Jiang
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | | | - Kunhong Shen
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States
| | - Mohammad A Sadi
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Abhishek B Solanki
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Peng Ju
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States
| | - Zhujing Xu
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States
| | - Pramey Upadhyaya
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Yong P Chen
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, Indiana 47907, United States
| | - Sunil A Bhave
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, Indiana 47907, United States
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