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Minev N, Buchkov K, Todorova N, Todorov R, Videva V, Stefanova M, Rafailov P, Karashanova D, Dikov H, Strijkova V, Trapalis C, Lin SH, Dimitrov D, Marinova V. Synthesis of 2D PtSe 2 Nanolayers on Glass Substrates and Their Integration in Near-Infrared Light Shutters. ACS OMEGA 2024; 9:14874-14886. [PMID: 38585138 PMCID: PMC10993254 DOI: 10.1021/acsomega.3c08235] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/19/2023] [Revised: 03/02/2024] [Accepted: 03/06/2024] [Indexed: 04/09/2024]
Abstract
PtSe2 has asserted its key role among the emerging 2D transition metal dichalcogenides, however, its simplified growth process with controlled number of layers, high crystalline quality, and on inexpensive substrates is still challenging. Here, we report the synthesis details of PtSe2 layers on soda lime glass substrates by selenization of predeposited Pt layers using the thermally assisted conversion method at atmospheric pressure. PtSe2 syntheses are confirmed by X-ray photoelectron spectroscopy and Raman analysis. The layers were further investigated with transmission electron microscopy and optical ellipsometry, revealing the thickness and its dependence on the metal precursor sputtering time. Finally, the integration of PtSe2 as transparent conductive layers in polymer-dispersed liquid crystal structures operating as near-infrared light shutters is demonstrated and device performance is discussed. The proposed simple and inexpensive synthesis approach opens up new directions toward PtSe2 potential technological applications, including ITO-free optoelectronics.
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Affiliation(s)
- Nikolay Minev
- Institute
of Optical Materials and Technologies, Bulgarian
Academy of Sciences, Acad. G. Bontchev Str. 109, 1113 Sofia, Bulgaria
| | - Krastyo Buchkov
- Institute
of Solid-State Physics, Bulgarian Academy
of Sciences, 72, Tzarigradsko
Chaussee Blvd, 1784 Sofia, Bulgaria
| | - Nadia Todorova
- Institute
of Nanoscience and Nanotechnology, National
Centre for Scientific Research “Demokritos” 15341 Agia Paraskevi, Greece
| | - Rosen Todorov
- Institute
of Optical Materials and Technologies, Bulgarian
Academy of Sciences, Acad. G. Bontchev Str. 109, 1113 Sofia, Bulgaria
| | - Vladimira Videva
- Institute
of Optical Materials and Technologies, Bulgarian
Academy of Sciences, Acad. G. Bontchev Str. 109, 1113 Sofia, Bulgaria
- Faculty
of Chemistry and Pharmacy, Sofia University, 1 James Bourchier Blvd., 1164 Sofia, Bulgaria
| | - Maria Stefanova
- Institute
of Optical Materials and Technologies, Bulgarian
Academy of Sciences, Acad. G. Bontchev Str. 109, 1113 Sofia, Bulgaria
| | - Peter Rafailov
- Institute
of Solid-State Physics, Bulgarian Academy
of Sciences, 72, Tzarigradsko
Chaussee Blvd, 1784 Sofia, Bulgaria
| | - Daniela Karashanova
- Institute
of Optical Materials and Technologies, Bulgarian
Academy of Sciences, Acad. G. Bontchev Str. 109, 1113 Sofia, Bulgaria
| | - Hristosko Dikov
- Central
Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria
| | - Velichka Strijkova
- Institute
of Optical Materials and Technologies, Bulgarian
Academy of Sciences, Acad. G. Bontchev Str. 109, 1113 Sofia, Bulgaria
| | - Christos Trapalis
- Institute
of Nanoscience and Nanotechnology, National
Centre for Scientific Research “Demokritos” 15341 Agia Paraskevi, Greece
| | - Shiuan Huei Lin
- Department
of Electrophysics, National Yang Ming Chiao
Tung University, 30010 Hsinchu, Taiwan
| | - Dimitre Dimitrov
- Institute
of Optical Materials and Technologies, Bulgarian
Academy of Sciences, Acad. G. Bontchev Str. 109, 1113 Sofia, Bulgaria
- Institute
of Solid-State Physics, Bulgarian Academy
of Sciences, 72, Tzarigradsko
Chaussee Blvd, 1784 Sofia, Bulgaria
| | - Vera Marinova
- Institute
of Optical Materials and Technologies, Bulgarian
Academy of Sciences, Acad. G. Bontchev Str. 109, 1113 Sofia, Bulgaria
- Department
of Electrophysics, National Yang Ming Chiao
Tung University, 30010 Hsinchu, Taiwan
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2
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Polyanskiy MN. Refractiveindex.info database of optical constants. Sci Data 2024; 11:94. [PMID: 38238330 PMCID: PMC10796781 DOI: 10.1038/s41597-023-02898-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Accepted: 12/27/2023] [Indexed: 01/22/2024] Open
Abstract
We introduce the refractiveindex.info database, a comprehensive open-source repository containing optical constants for a wide array of materials, and describe in detail the underlying dataset. This collection, derived from a meticulous compilation of data sourced from peer-reviewed publications, manufacturers' datasheets, and authoritative texts, aims to advance research in optics and photonics. The data is stored using a YAML-based format, ensuring integrity, consistency, and ease of access. Each record is accompanied by detailed metadata, facilitating a comprehensive understanding and efficient utilization of the data. In this descriptor, we outline the data curation protocols and the file format used for data records, and briefly demonstrate how the data can be organized in a user-friendly fashion akin to the books in a traditional library.
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Affiliation(s)
- Mikhail N Polyanskiy
- Brookhaven National Laboratory, Accelerator Test Facility, Upton, NY, 11973, USA.
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3
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Chen QY, Huang FJ, Ruan JQ, Zhao YF, Li F, Yang H, He Y, Xiong K. Two-dimensional β-noble-transition-metal chalcogenide: novel highly stable semiconductors with manifold outstanding optoelectronic properties and strong in-plane anisotropy. RSC Adv 2023; 13:28861-28872. [PMID: 37790098 PMCID: PMC10543986 DOI: 10.1039/d3ra05515a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/14/2023] [Accepted: 09/10/2023] [Indexed: 10/05/2023] Open
Abstract
In this work, five two-dimensional (2D) noble-transition-metal chalcogenide (NTMC) semiconductors, namely β-NX (N = Au, Ag; X = S, Se, Te), were designed and predicted by first-principles simulations. Structurally, the monolayer β-NX materials have good energetic, mechanical, dynamical, and thermal stability. They contain two inequivalent noble-transition-metal atoms in the unit cell, and the N-X bond comprises a partial ionic bond and a partial covalent bond. Regarding the electronic properties, the β-NX materials are indirect-band-gap semiconductors with appropriate band-gap values. They have tiny electron effective masses. The hole effective masses exhibit significant differences in different directions, indicating strongly anisotropic hole mobility. In addition, the coexistence of linear and square-planar channels means that the diffusion and transport of carriers should be anisotropic. In terms of optical properties, the β-NX materials show high absorption coefficients. The absorption and reflection characteristics reveal strong anisotropy in different directions. Therefore, the β-NX materials are indirect-band-gap semiconductors with good stability, high absorption coefficients, and strong mechanical, electronic, transport, and optical anisotropy. In the future, they could have great potential as 2D semiconductors in nano-electronics and nano-optoelectronics.
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Affiliation(s)
- Qing-Yuan Chen
- School of Physical Science and Technology, Kunming University Kunming 650214 China
| | - Fei-Jie Huang
- School of Physical Science and Technology, Kunming University Kunming 650214 China
| | - Ju-Qi Ruan
- School of Physical Science and Technology, Kunming University Kunming 650214 China
| | - Yi-Fen Zhao
- School of Physical Science and Technology, Kunming University Kunming 650214 China
| | - Fen Li
- School of Physical Science and Technology, Kunming University Kunming 650214 China
| | - Hai Yang
- School of Physical Science and Technology, Kunming University Kunming 650214 China
| | - Yao He
- Department of Physics, Yunnan University No.2 Green Lake North Road, Wu Hua Qu Kunming 650091 Yunnan Province China
| | - Kai Xiong
- Materials Genome Institute, School of Materials and Energy, Yunnan University Kunming 650091 China
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4
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Semkin VA, Shabanov AV, Mylnikov DA, Kashchenko MA, Domaratskiy IK, Zhukov SS, Svintsov DA. Zero-Bias Photodetection in 2D Materials via Geometric Design of Contacts. NANO LETTERS 2023. [PMID: 37220075 DOI: 10.1021/acs.nanolett.3c01259] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Structural or crystal asymmetry is a necessary condition for the emergence of zero-bias photocurrent in light detectors. Structural asymmetry has been typically achieved via p-n doping, which is a technologically complex process. Here, we propose an alternative approach to achieve zero-bias photocurrent in two-dimensional (2D) material flakes exploiting the geometrical nonequivalence of source and drain contacts. As a prototypical example, we equip a square-shaped flake of PdSe2 with mutually orthogonal metal leads. Upon uniform illumination with linearly polarized light, the device demonstrates nonzero photocurrent which flips its sign upon 90° polarization rotation. The origin of zero-bias photocurrent lies in a polarization-dependent lightning-rod effect. It enhances the electromagnetic field at one contact from the orthogonal pair and selectively activates the internal photoeffect at the respective metal-PdSe2 Schottky junction. The proposed technology of contact engineering is independent of a particular light-detection mechanism and can be extended to arbitrary 2D materials.
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Affiliation(s)
- Valentin A Semkin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
| | - Aleksandr V Shabanov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
| | - Dmitry A Mylnikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
| | - Mikhail A Kashchenko
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
- Programmable Functional Materials Lab, Brain and Consciousness Research Center, Moscow 121205, Russia
| | - Ivan K Domaratskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
| | - Sergey S Zhukov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
| | - Dmitry A Svintsov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
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5
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Zhu S, Duan R, Chen W, Wang F, Han J, Xu X, Wu L, Ye M, Sun F, Han S, Zhao X, Tan CS, Liang H, Liu Z, Wang QJ. Ultrastrong Optical Harmonic Generations in Layered Platinum Disulfide in the Mid-Infrared. ACS NANO 2023; 17:2148-2158. [PMID: 36706067 DOI: 10.1021/acsnano.2c08147] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Nonlinear optical activities (e.g., harmonic generations) in two-dimensional (2D) layered materials have attracted much attention due to the great promise in diverse optoelectronic applications such as nonlinear optical modulators, nonreciprocal optical device, and nonlinear optical imaging. Exploration of nonlinear optical response (e.g., frequency conversion) in the infrared, especially the mid-infrared (MIR) region, is highly desirable for ultrafast MIR laser applications ranging from tunable MIR coherent sources, MIR supercontinuum generation, and MIR frequency-comb-based spectroscopy to high harmonic generation. However, nonlinear optical effects in 2D layered materials under MIR pump are rarely reported, mainly due to the lack of suitable 2D layered materials. Van der Waals layered platinum disulfide (PtS2) with a sizable bandgap from the visible to the infrared region is a promising candidate for realizing MIR nonlinear optical devices. In this work, we investigate the nonlinear optical properties including third-and fifth-harmonic generation (THG and FHG) in thin layered PtS2 under infrared pump (1550-2510 nm). Strikingly, the ultrastrong third-order nonlinear susceptibility χ(3)(-3ω;ω,ω,ω) of thin layered PtS2 in the MIR region was estimated to be over 10-18 m2/V2, which is about one order of that in traditional transition metal chalcogenides. Such excellent performance makes air-stable PtS2 a potential candidate for developing next-generation MIR nonlinear photonic devices.
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Affiliation(s)
- Song Zhu
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
| | - Ruihuan Duan
- School of Material Science and Engineering, Nanyang Technological University, 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Nanyang Technological University, 637371, Singapore
| | - Wenduo Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
| | - Fakun Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
| | - Jiayue Han
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
| | - Xiaodong Xu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150001, P. R. China
| | - Lishu Wu
- School of Material Science and Engineering, Nanyang Technological University, 639798, Singapore
| | - Ming Ye
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
| | - Fangyuan Sun
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
| | - Song Han
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
| | - Xiaoxu Zhao
- School of Material Science and Engineering, Nanyang Technological University, 639798, Singapore
| | - Chuan Seng Tan
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
| | - Houkun Liang
- School of Electronics and Information Engineering, Sichuan University, Chengdu, Sichuan610064, P. R. China
| | - Zheng Liu
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
- School of Material Science and Engineering, Nanyang Technological University, 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Nanyang Technological University, 637371, Singapore
| | - Qi Jie Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
- School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Nanyang Technological University, 637371, Singapore
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6
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El-Sayed MA, Tselin AP, Ermolaev GA, Tatmyshevskiy MK, Slavich AS, Yakubovsky DI, Novikov SM, Vyshnevyy AA, Arsenin AV, Volkov VS. Non-Additive Optical Response in Transition Metal Dichalcogenides Heterostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12244436. [PMID: 36558289 PMCID: PMC9787828 DOI: 10.3390/nano12244436] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2022] [Revised: 12/04/2022] [Accepted: 12/09/2022] [Indexed: 05/27/2023]
Abstract
Van der Waals (vdW) heterostructures pave the way to achieve the desired material properties for a variety of applications. In this way, new scientific and industrial challenges and fundamental questions arise. One of them is whether vdW materials preserve their original optical response when assembled in a heterostructure. Here, we resolve this issue for four exemplary monolayer heterostructures: MoS2/Gr, MoS2/hBN, WS2/Gr, and WS2/hBN. Through joint Raman, ellipsometry, and reflectance spectroscopies, we discovered that heterostructures alter MoS2 and WS2 optical constants. Furthermore, despite the similarity of MoS2 and WS2 monolayers, their behavior in heterostructures is markedly different. While MoS2 has large changes, particularly above 3 eV, WS2 experiences modest changes in optical constants. We also detected a transformation from dark into bright exciton for MoS2/Gr heterostructure. In summary, our findings provide clear evidence that the optical response of heterostructures is not the sum of optical properties of its constituents.
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Affiliation(s)
- Marwa A. El-Sayed
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Department of Physics, Faculty of Science, Menoufia University, Shebin El-Koom 32511, Egypt
| | - Andrey P. Tselin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Photonics and Quantum Materials Department, Skolkovo Institute of Science and Technology, 3 Nobel, Moscow 143026, Russia
| | - Georgy A. Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Mikhail K. Tatmyshevskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Aleksandr S. Slavich
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Dmitry I. Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Sergey M. Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Andrey A. Vyshnevyy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Aleksey V. Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Valentyn S. Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
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7
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Ermolaev GA, Yakubovsky DI, El-Sayed MA, Tatmyshevskiy MK, Mazitov AB, Popkova AA, Antropov IM, Bessonov VO, Slavich AS, Tselikov GI, Kruglov IA, Novikov SM, Vyshnevyy AA, Fedyanin AA, Arsenin AV, Volkov VS. Broadband Optical Constants and Nonlinear Properties of SnS 2 and SnSe 2. NANOMATERIALS 2021; 12:nano12010141. [PMID: 35010091 PMCID: PMC8746438 DOI: 10.3390/nano12010141] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/05/2021] [Revised: 12/24/2021] [Accepted: 12/28/2021] [Indexed: 11/16/2022]
Abstract
SnS2 and SnSe2 have recently been shown to have a wide range of applications in photonic and optoelectronic devices. However, because of incomplete knowledge about their optical characteristics, the use of SnS2 and SnSe2 in optical engineering remains challenging. Here, we addressed this problem by establishing SnS2 and SnSe2 linear and nonlinear optical properties in the broad (300-3300 nm) spectral range. Coupled with the first-principle calculations, our experimental study unveiled the full dielectric tensor of SnS2 and SnSe2. Furthermore, we established that SnS2 is a promising material for visible high refractive index nanophotonics. Meanwhile, SnSe2 demonstrates a stronger nonlinear response compared with SnS2. Our results create a solid ground for current and next-generation SnS2- and SnSe2-based devices.
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Affiliation(s)
- Georgy A. Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Dmitry I. Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Marwa A. El-Sayed
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Department of Physics, Faculty of Science, Menoufia University, Shebin El-Koom 32511, Egypt
| | - Mikhail K. Tatmyshevskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Arslan B. Mazitov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Dukhov Research Institute of Automatics (VNIIA), 22 Suschevskaya St., 127055 Moscow, Russia
| | - Anna A. Popkova
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia; (A.A.P.); (I.M.A.); (V.O.B.); (A.A.F.)
| | - Ilya M. Antropov
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia; (A.A.P.); (I.M.A.); (V.O.B.); (A.A.F.)
| | - Vladimir O. Bessonov
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia; (A.A.P.); (I.M.A.); (V.O.B.); (A.A.F.)
| | - Aleksandr S. Slavich
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Gleb I. Tselikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Ivan A. Kruglov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Dukhov Research Institute of Automatics (VNIIA), 22 Suschevskaya St., 127055 Moscow, Russia
| | - Sergey M. Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Andrey A. Vyshnevyy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Andrey A. Fedyanin
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia; (A.A.P.); (I.M.A.); (V.O.B.); (A.A.F.)
| | - Aleksey V. Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Valentyn S. Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Correspondence: or ; Tel.: +7-926-735-93-98
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