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Bandgap-Tuned 2D Boron Nitride/Tungsten Nitride Nanocomposites for Development of High-Performance Deep Ultraviolet Selective Photodetectors. NANOMATERIALS 2020; 10:nano10081433. [PMID: 32717785 PMCID: PMC7466640 DOI: 10.3390/nano10081433] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/28/2020] [Revised: 07/10/2020] [Accepted: 07/13/2020] [Indexed: 12/15/2022]
Abstract
This study presents a fast and effective method to synthesize 2D boron nitride/tungsten nitride (BN–WN) nanocomposites for tunable bandgap structures and devices. A few minutes of synthesis yielded a large quantity of high-quality 2D nanocomposites, with which a simple, low-cost deep UV photo-detector (DUV-PD) was fabricated and tested. The new device was demonstrated to have very good performance. High responsivity up to 1.17 A/W, fast response-time of lower than two milliseconds and highly stable repeatability were obtained. Furthermore, the influences of operating temperature and applied bias voltage on the properties of DUV-PD as well as its band structure shift were investigated.
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Ouyang L, Armstrong JPK, Chen Q, Lin Y, Stevens MM. Void-free 3D Bioprinting for In-situ Endothelialization and Microfluidic Perfusion. ADVANCED FUNCTIONAL MATERIALS 2020; 30:1909009. [PMID: 35677899 DOI: 10.1002/adfm.201909909] [Citation(s) in RCA: 98] [Impact Index Per Article: 24.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2019] [Indexed: 05/21/2023]
Abstract
Two major challenges of 3D bioprinting are the retention of structural fidelity and efficient endothelialization for tissue vascularization. We address both of these issues by introducing a versatile 3D bioprinting strategy, in which a templating bioink is deposited layer-by-layer alongside a matrix bioink to establish void-free multimaterial structures. After crosslinking the matrix phase, the templating phase is sacrificed to create a well-defined 3D network of interconnected tubular channels. This void-free 3D printing (VF-3DP) approach circumvents the traditional concerns of structural collapse, deformation and oxygen inhibition, moreover, it can be readily used to print materials that are widely considered "unprintable". By pre-loading endothelial cells into the templating bioink, the inner surface of the channels can be efficiently cellularized with a confluent endothelial layer. This in-situ endothelialization method can be used to produce endothelium with a far greater uniformity than can be achieved using the conventional post-seeding approach. This VF-3DP approach can also be extended beyond tissue fabrication and towards customized hydrogel-based microfluidics and self-supported perfusable hydrogel constructs.
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Affiliation(s)
- Liliang Ouyang
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - James P K Armstrong
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - Qu Chen
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - Yiyang Lin
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - Molly M Stevens
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
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5
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Nie X, Li G, Jiang Z, Li W, Ouyang T, Wang J. Co-Solvent Exfoliation of Hexagonal Boron Nitride: Effect of Raw Bulk Boron Nitride Size and Co-Solvent Composition. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 10:E1035. [PMID: 32481653 PMCID: PMC7352847 DOI: 10.3390/nano10061035] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/25/2020] [Revised: 05/20/2020] [Accepted: 05/23/2020] [Indexed: 01/10/2023]
Abstract
Exfoliation of two-dimensional boron nitride nanosheets (BNNSs) from parent bulk material has been receiving intensive attention because of its fascinating physical properties. Liquid exfoliation is a simple, scalable approach to produce single-layer or few-layer BNNS. In this paper, water/propanol co-solvent exfoliation of bulk boron nitride under the assistance of sonication was investigated in detail. Special attention was paid on the effect of raw bulk boron nitride size and co-solvent composition. The results show that sonication of small-size hexagonal boron nitride tends to generate large nanosheets, due to a predominant solvent wedge effect. In addition, it is found that the composition of water/propanol co-solvent has an important effect on exfoliation efficiency. Interestingly, although two isomers of 1-propanol (NPA) and 2-propanol (IPA) have the same molecular weight and similar surface tension, their aqueous solutions allow the formation of boron nitride nanosheets dispersion with markedly different concentrations. It is proposed that due to their spatial configuration difference, NPA with its longer molecular chain and fewer hydrophobic methyl group tends to form dynamic water-NPA clusters with larger size than water-IPA clusters. The hydrodynamic radius of the co-solvent "clusters" was calculated to be 0.72 nm for water/NPA system and 0.44 nm for water/IPA system at their maximum, respectively. Their size changes, represented by two curves, indicate a strong "cluster size" effect on exfoliation efficiency. Our work provides an insight into co-solvent exfoliation of hexagonal boron nitride and emphasizes the importance of co-solvent cluster size in exfoliation efficiency.
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Affiliation(s)
- Xiang Nie
- College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (X.N.); (G.L.); (Z.J.); (W.L.); (J.W.)
- Hunan Province Key Laboratory for Advanced Carbon Materials and Applied Technology, Hunan University, Changsha 410082, China
| | - Guo Li
- College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (X.N.); (G.L.); (Z.J.); (W.L.); (J.W.)
- Hunan Province Key Laboratory for Advanced Carbon Materials and Applied Technology, Hunan University, Changsha 410082, China
| | - Zhao Jiang
- College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (X.N.); (G.L.); (Z.J.); (W.L.); (J.W.)
| | - Wei Li
- College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (X.N.); (G.L.); (Z.J.); (W.L.); (J.W.)
- Hunan Province Key Laboratory for Advanced Carbon Materials and Applied Technology, Hunan University, Changsha 410082, China
| | - Ting Ouyang
- College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (X.N.); (G.L.); (Z.J.); (W.L.); (J.W.)
- Hunan Province Key Laboratory for Advanced Carbon Materials and Applied Technology, Hunan University, Changsha 410082, China
| | - Jianfeng Wang
- College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (X.N.); (G.L.); (Z.J.); (W.L.); (J.W.)
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6
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Gong C, Chu J, Yin C, Yan C, Hu X, Qian S, Hu Y, Hu K, Huang J, Wang H, Wang Y, Wangyang P, Lei T, Dai L, Wu C, Chen B, Li C, Liao M, Zhai T, Xiong J. Self-Confined Growth of Ultrathin 2D Nonlayered Wide-Bandgap Semiconductor CuBr Flakes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1903580. [PMID: 31339207 DOI: 10.1002/adma.201903580] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2019] [Revised: 06/18/2019] [Indexed: 05/08/2023]
Abstract
2D planar structures of nonlayered wide-bandgap semiconductors enable distinguished electronic properties, desirable short wavelength emission, and facile construction of 2D heterojunction without lattice match. However, the growth of ultrathin 2D nonlayered materials is limited by their strong covalent bonded nature. Herein, the synthesis of ultrathin 2D nonlayered CuBr nanosheets with a thickness of about 0.91 nm and an edge size of 45 µm via a controllable self-confined chemical vapor deposition method is described. The enhanced spin-triplet exciton (Zf , 2.98 eV) luminescence and polarization-enhanced second-harmonic generation based on the 2D CuBr flakes demonstrate the potential of short-wavelength luminescent applications. Solar-blind and self-driven ultraviolet (UV) photodetectors based on the as-synthesized 2D CuBr flakes exhibit a high photoresponsivity of 3.17 A W-1 , an external quantum efficiency of 1126%, and a detectivity (D*) of 1.4 × 1011 Jones, accompanied by a fast rise time of 32 ms and a decay time of 48 ms. The unique nonlayered structure and novel optical properties of the 2D CuBr flakes, together with their controllable growth, make them a highly promising candidate for future applications in short-wavelength light-emitting devices, nonlinear optical devices, and UV photodetectors.
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Affiliation(s)
- Chuanhui Gong
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Junwei Chu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Chujun Yin
- Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, P. R. China
| | - Chaoyi Yan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Xiaozong Hu
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Shifeng Qian
- Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Yin Hu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Kai Hu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Jianwen Huang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Hongbo Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Peihua Wangyang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Tianyu Lei
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Liping Dai
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Chunyang Wu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Bo Chen
- Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, P. R. China
| | - Chaobo Li
- Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, P. R. China
| | - Min Liao
- Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
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Super Stable Pollution Gas Sensor Based on Functionalized 2D Boron Nitride Nanosheet Materials for High Humidity Environments. CHEMOSENSORS 2018. [DOI: 10.3390/chemosensors6040049] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
We report on studies of new gas sensing devices to be used in high humidity environments. Highly thermal-stable, super hydrophobic 2-dimensional (2D) boron nitride nanosheets (BNNSs) functionalized with Pt nanoparticles were prepared and used as an active layer for the prototype. The morphologic surface, crystallographic structures and chemical compositions of the synthesized 2D materials were characterized by using optical microscope, scanning electron microscope (SEM), transmission electron microscope (TEM) and atomic force microscope (AFM) and Raman scattering, respectively. The experimental data reveals that high-quality BNNSs were prepared. A pair of Au electrodes were combined with a basic electrical circuit and the 2D sensing material to form high-performance gas sensors for the detection of pollution gases. The present structure is simple and the fabrication is easy and fast, which ensures the creation of a low-cost prototype with harsh (high humidity, high temperature) environment resistance and potential for miniaturization. The responses of the prototype to different target gases with different concentrations were characterized. The influences of the operating temperature and bias voltage effect on sensing performances were also investigated. The fabricated sensors appear to have high selectivity, high sensitivity and fast response to target gases. The sensing mechanism in the present case is attributed to the electron donation from the target gas molecules to the active layer, leading to the change of electrical properties on the surface of BNNS layer.
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