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Xiao Z, Ren Z, Zhuge Y, Zhang Z, Zhou J, Xu S, Xu C, Dong B, Lee C. Multimodal In-Sensor Computing System Using Integrated Silicon Photonic Convolutional Processor. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2408597. [PMID: 39468388 DOI: 10.1002/advs.202408597] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2024] [Revised: 09/12/2024] [Indexed: 10/30/2024]
Abstract
Photonic integrated circuits offer miniaturized solutions for multimodal spectroscopic sensory systems by leveraging the simultaneous interaction of light with temperature, chemicals, and biomolecules, among others. The multimodal spectroscopic sensory data is complex and has huge data volume with high redundancy, thus requiring high communication bandwidth associated with high communication power consumption to transfer the sensory data. To circumvent this high communication cost, the photonic sensor and processor are brought into intimacy and propose a photonic multimodal in-sensor computing system using an integrated silicon photonic convolutional processor. A microring resonator crossbar array is used as the photonic processor to implement convolutional operation with 5-bit accuracy, validated through image edge detection tasks. Further integrating the processor with a photonic spectroscopic sensor, the in situ processing of multimodal spectroscopic sensory data is demonstrated, achieving the classification of protein species of different types and concentrations at various temperatures. A classification accuracy of 97.58% across 45 different classes is achieved. The multimodal in-sensor computing system demonstrates the feasibility of integrating photonic processors and photonic sensors to enhance the data processing capability of photonic devices at the edge.
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Affiliation(s)
- Zian Xiao
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- NUS Suzhou Research Institute (NUSRI), Suzhou, Jiangsu, 215123, China
| | - Zhihao Ren
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yangyang Zhuge
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Zixuan Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Jingkai Zhou
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Siyu Xu
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Cheng Xu
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Bowei Dong
- Institute of Microelectronics (IME), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-02, Singapore, 138634, Singapore
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- NUS Suzhou Research Institute (NUSRI), Suzhou, Jiangsu, 215123, China
- NUS Graduate School-Integrative Sciences and Engineering Programme(ISEP), National University of Singapore, Singapore, 119077, Singapore
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Zhu X, Li S, Sun A, Pan Y, Liu W, Wu Y, Zhang G, Shi Y. A mid-infrared focusing grating coupler with a single circular arc element based on germanium on silicon. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2023; 14:478-484. [PMID: 37091286 PMCID: PMC10113522 DOI: 10.3762/bjnano.14.38] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Accepted: 03/17/2023] [Indexed: 05/03/2023]
Abstract
A mid-infrared (MIR) focusing grating coupler (FGC) with a single circular arc element (CAE) in the front of the gratings based on a germanium-on-silicon (Ge-on-Si) platform is designed and demonstrated. It can be used equivalently to a traditional FGC with all-focusing gratings. By optimizing the structural parameters of the CAE, the combination of a tapered linear grating and the CAE can improve the coupling efficiency to 8.61%, which is twice as large as that of the traditional MIR grating couplers. To the best of our knowledge, it is the highest coupling efficiency in a full-etch grating coupler based on Ge-on-Si. Moreover, the proposed grating coupler can be used for refractive index (RI) sensing, and the maximum sensitivity is 980.7 nm/RIU when the RI changes from 1 to 1.04. By comparing with traditional grating couplers requiring secondary etching, the proposed full-etch grating coupler structure can reduce the complexity of fabrication and can provide a prospective platform for MIR photonic integration and photonic biosensor detection.
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Affiliation(s)
- Xiaojun Zhu
- School of Information Science and Technology, Nantong University, Nantong 226019, China
| | - Shuai Li
- School of Information Science and Technology, Nantong University, Nantong 226019, China
| | - Ang Sun
- School of Information Science and Technology, Nantong University, Nantong 226019, China
| | - Yongquan Pan
- School of Information Science and Technology, Nantong University, Nantong 226019, China
| | - Wen Liu
- School of Information Science and Technology, Nantong University, Nantong 226019, China
| | - Yue Wu
- School of Information Science and Technology, Nantong University, Nantong 226019, China
| | - Guoan Zhang
- School of Information Science and Technology, Nantong University, Nantong 226019, China
| | - Yuechun Shi
- Yongjiang Laboratory, Ningbo 315202, China and Nanjing University, Key Lab Intelligent Opt Sensing & Manipulat, Minist Educ, Nanjing University, Nanjing 210093, China
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Abstract
Terahertz (THz) electromagnetic spectrum ranging from 0.1THz to 10THz has become critical for sixth generation (6G) applications, such as high-speed communication, fingerprint chemical sensing, non-destructive biosensing, and bioimaging. However, the limited response of naturally existing materials THz waves has induced a gap in the electromagnetic spectrum, where a lack of THz functional devices using natural materials has occurred in this gap. Metamaterials, artificially composed structures that can engineer the electromagnetic properties to manipulate the waves, have enabled the development of many THz devices, known as "metadevices". Besides, the tunability of THz metadevices can be achieved by tunable structures using microelectromechanical system (MEMS) technologies, as well as tunable materials including phase change materials (PCMs), electro-optical materials (EOMs), and thermo-optical materials (TOMs). Leveraging various tuning mechanisms together with metamaterials, tremendous research works have demonstrated reconfigurable functional THz devices, playing an important role to fill the THz gap toward the 6G applications. This review introduces reconfigurable metadevices from fundamental principles of metamaterial resonant system to the design mechanisms of functional THz metamaterial devices and their related applications. Moreover, we provide perspectives on the future development of THz photonic devices for state-of-the-art applications.
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Stirling CJ, Halir R, Sánchez-Postigo A, Qu Z, Reynolds JD, Penadés JS, Senthil Murugan G, Ortega-Moñux A, Wangüemert-Pérez JG, Molina-Fernández Í, Mashanovich GZ, Nedeljkovic M. Broadband 2 × 2 multimode interference coupler for mid-infrared wavelengths. OPTICS LETTERS 2021; 46:5300-5303. [PMID: 34724460 DOI: 10.1364/ol.439985] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/13/2021] [Accepted: 09/25/2021] [Indexed: 06/13/2023]
Abstract
Beam splitters are core components of photonic integrated circuits and are often implemented with multimode interference couplers. While these devices offer high performance, their operational bandwidth is still restrictive for sensing applications in the mid-infrared wavelength range. Here we experimentally demonstrate a subwavelength-structured 2×2 multimode interference coupler with high performance in the 3.1-3.7µm range, doubling the bandwidth of a conventional device.
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Qiao Q, Sun H, Liu X, Dong B, Xia J, Lee C, Zhou G. Suspended Silicon Waveguide with Sub-Wavelength Grating Cladding for Optical MEMS in Mid-Infrared. MICROMACHINES 2021; 12:mi12111311. [PMID: 34832723 PMCID: PMC8623870 DOI: 10.3390/mi12111311] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/07/2021] [Revised: 10/23/2021] [Accepted: 10/25/2021] [Indexed: 12/02/2022]
Abstract
Mid-infrared (MIR) photonics are generating considerable interest because of the potential applications in spectroscopic sensing, thermal imaging, and remote sensing. Silicon photonics is believed to be a promising solution to realize MIR photonic integrated circuits (PICs). The past decade has seen a huge growth in MIR PIC building blocks. However, there is still a need for the development of MIR reconfigurable photonics to enable powerful on-chip optical systems and new functionalities. In this paper, we present an MIR (3.7~4.1 μm wavelength range) MEMS reconfiguration approach using the suspended silicon waveguide platform on the silicon-on-insulator. With the sub-wavelength grating claddings, the photonic waveguide can be well integrated with the MEMS actuator, thus offering low-loss, energy-efficient, and effective reconfiguration. We present a simulation study on the waveguide design and depict the MEMS-integration approach. Moreover, we experimentally report the suspended waveguide with propagation loss (−2.9 dB/cm) and bending loss (−0.076 dB each). The suspended waveguide coupler is experimentally investigated. In addition, we validate the proposed optical MEMS approach using a reconfigurable ring resonator design. In conclusion, we experimentally demonstrate the proposed waveguide platform’s capability for MIR MEMS-reconfigurable photonics, which empowers the MIR on-chip optical systems for various applications.
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Affiliation(s)
- Qifeng Qiao
- Department of Mechanical Engineering, National University of Singapore, Singapore 117579, Singapore; (Q.Q.); (H.S.); (X.L.); (J.X.)
| | - Haoyang Sun
- Department of Mechanical Engineering, National University of Singapore, Singapore 117579, Singapore; (Q.Q.); (H.S.); (X.L.); (J.X.)
| | - Xinmiao Liu
- Department of Mechanical Engineering, National University of Singapore, Singapore 117579, Singapore; (Q.Q.); (H.S.); (X.L.); (J.X.)
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore;
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608, Singapore
| | - Bowei Dong
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore;
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608, Singapore
| | - Ji Xia
- Department of Mechanical Engineering, National University of Singapore, Singapore 117579, Singapore; (Q.Q.); (H.S.); (X.L.); (J.X.)
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore;
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608, Singapore
- Correspondence: (C.L.); (G.Z.); Tel.: +65-6516-1235 (G.Z.)
| | - Guangya Zhou
- Department of Mechanical Engineering, National University of Singapore, Singapore 117579, Singapore; (Q.Q.); (H.S.); (X.L.); (J.X.)
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608, Singapore
- Correspondence: (C.L.); (G.Z.); Tel.: +65-6516-1235 (G.Z.)
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Ren Z, Xu J, Le X, Lee C. Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G. MICROMACHINES 2021; 12:946. [PMID: 34442568 PMCID: PMC8398582 DOI: 10.3390/mi12080946] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/29/2021] [Revised: 07/29/2021] [Accepted: 07/29/2021] [Indexed: 12/16/2022]
Abstract
Wafer bonding technology is one of the most effective methods for high-quality thin-film transfer onto different substrates combined with ion implantation processes, laser irradiation, and the removal of the sacrificial layers. In this review, we systematically summarize and introduce applications of the thin films obtained by wafer bonding technology in the fields of electronics, optical devices, on-chip integrated mid-infrared sensors, and wearable sensors. The fabrication of silicon-on-insulator (SOI) wafers based on the Smart CutTM process, heterogeneous integrations of wide-bandgap semiconductors, infrared materials, and electro-optical crystals via wafer bonding technology for thin-film transfer are orderly presented. Furthermore, device design and fabrication progress based on the platforms mentioned above is highlighted in this work. They demonstrate that the transferred films can satisfy high-performance power electronics, molecular sensors, and high-speed modulators for the next generation applications beyond 5G. Moreover, flexible composite structures prepared by the wafer bonding and de-bonding methods towards wearable electronics are reported. Finally, the outlooks and conclusions about the further development of heterogeneous structures that need to be achieved by the wafer bonding technology are discussed.
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Affiliation(s)
- Zhihao Ren
- Department of Electrical & Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore; (Z.R.); (J.X.); (X.L.)
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, 5 Engineering Drive 1, Singapore 117608, Singapore
- National University of Singapore Suzhou Research Institute (NUSRI), Suzhou Industrial Park, Suzhou 215123, China
| | - Jikai Xu
- Department of Electrical & Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore; (Z.R.); (J.X.); (X.L.)
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, 5 Engineering Drive 1, Singapore 117608, Singapore
- National University of Singapore Suzhou Research Institute (NUSRI), Suzhou Industrial Park, Suzhou 215123, China
| | - Xianhao Le
- Department of Electrical & Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore; (Z.R.); (J.X.); (X.L.)
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, 5 Engineering Drive 1, Singapore 117608, Singapore
| | - Chengkuo Lee
- Department of Electrical & Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore; (Z.R.); (J.X.); (X.L.)
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, 5 Engineering Drive 1, Singapore 117608, Singapore
- National University of Singapore Suzhou Research Institute (NUSRI), Suzhou Industrial Park, Suzhou 215123, China
- NUS Graduate School for Integrative Science and Engineering, National University of Singapore, Singapore 117456, Singapore
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7
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Koompai N, Chaisakul P, Limsuwan P, Le Roux X, Vivien L, Marris-Morini D. Design and Simulation Investigation of Si 3N 4 Photonics Circuits for Wideband On-Chip Optical Gas Sensing around 2 µm Optical Wavelength. SENSORS 2021; 21:s21072513. [PMID: 33916817 PMCID: PMC8038381 DOI: 10.3390/s21072513] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/15/2021] [Revised: 03/25/2021] [Accepted: 04/01/2021] [Indexed: 11/16/2022]
Abstract
We theoretically explore the potential of Si3N4 on SiO2 waveguide platform toward a wideband spectroscopic detection around the optical wavelength of 2 μm. The design of Si3N4 on SiO2 waveguide architectures consisting of a Si3N4 slot waveguide for a wideband on-chip spectroscopic sensing around 2 μm, and a Si3N4 multi-mode interferometer (MMI)-based coupler for light coupling from classical strip waveguide into the identified Si3N4 slot waveguides over a wide spectral range are investigated. We found that a Si3N4 on SiO2 slot waveguide structure can be designed for using as optical interaction part over a spectral range of interest, and the MMI structure can be used to enable broadband optical coupling from a strip to the slot waveguide for wideband multi-gas on-chip spectroscopic sensing. Reasons for the operating spectral range of the system are discussed.
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Affiliation(s)
- Natnicha Koompai
- Centre de Nanosciences et de Nanotechnologies, Université Paris Sud, CNRS, Université Paris Saclay, 91120 Palaiseau, France
- Department of Physics, Faculty of Science, Kasetsart University, Bangkok 10900, Thailand
| | - Papichaya Chaisakul
- Department of Physics, Faculty of Science, Kasetsart University, Bangkok 10900, Thailand
| | - Pichet Limsuwan
- Department of Physics, Faculty of Science, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, Thailand
| | - Xavier Le Roux
- Centre de Nanosciences et de Nanotechnologies, Université Paris Sud, CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Laurent Vivien
- Centre de Nanosciences et de Nanotechnologies, Université Paris Sud, CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Delphine Marris-Morini
- Centre de Nanosciences et de Nanotechnologies, Université Paris Sud, CNRS, Université Paris Saclay, 91120 Palaiseau, France
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8
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Yazici MS, Dong B, Hasan D, Sun F, Lee C. Integration of MEMS IR detectors with MIR waveguides for sensing applications. OPTICS EXPRESS 2020; 28:11524-11537. [PMID: 32403662 DOI: 10.1364/oe.381279] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2019] [Accepted: 02/19/2020] [Indexed: 06/11/2023]
Abstract
Waveguides have been utilized for label-free and miniaturized mid-infrared gas sensors that operate on the evanescent field absorption principle. For integrated systems, photodetectors based on the photocarrier generation principle are previously integrated with waveguides. However, due to the thermal excitation of carriers at room temperature, they suffer from large dark currents and noise in the long-wavelength region. In this paper, we introduce the integration of a MEMS-based broadband infrared thermopile sensor with mid-infrared waveguides via flip-chip bonding technology and demonstrate a proof-of-concept gas (N2O) sensor working at 3.9 µm. A photonic device with input and output grating couplers designed at 3.72 µm was fabricated on a silicon-on-insulator (SOI) platform and integrated with a bare thermopile chip on its output side via flip-chip bonding in order to realize an integrated photonic platform for a myriad range of sensing applications. A responsivity of 69 mV/W was measured at 3.72 µm for an 11 mm waveguide. A second device designed at 3.9 µm has a 1800 ppm resolution for N2O sensing.
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Ma Y, Dong B, Lee C. Progress of infrared guided-wave nanophotonic sensors and devices. NANO CONVERGENCE 2020; 7:12. [PMID: 32239361 PMCID: PMC7113365 DOI: 10.1186/s40580-020-00222-x] [Citation(s) in RCA: 31] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/24/2019] [Accepted: 03/12/2020] [Indexed: 06/01/2023]
Abstract
Nanophotonics, manipulating light-matter interactions at the nanoscale, is an appealing technology for diversified biochemical and physical sensing applications. Guided-wave nanophotonics paves the way to miniaturize the sensors and realize on-chip integration of various photonic components, so as to realize chip-scale sensing systems for the future realization of the Internet of Things which requires the deployment of numerous sensor nodes. Starting from the popular CMOS-compatible silicon nanophotonics in the infrared, many infrared guided-wave nanophotonic sensors have been developed, showing the advantages of high sensitivity, low limit of detection, low crosstalk, strong detection multiplexing capability, immunity to electromagnetic interference, small footprint and low cost. In this review, we provide an overview of the recent progress of research on infrared guided-wave nanophotonic sensors. The sensor configurations, sensing mechanisms, sensing performances, performance improvement strategies, and system integrations are described. Future development directions are also proposed to overcome current technological obstacles toward industrialization.
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Affiliation(s)
- Yiming Ma
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576 Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, 117608 Singapore
- NUS Suzhou Research Institute (NUSRI), Suzhou Industrial Park, Suzhou, 215123 China
| | - Bowei Dong
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576 Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, 117608 Singapore
- NUS Graduate School for Integrative Science and Engineering (NGS), National University of Singapore, Singapore, 117456 Singapore
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576 Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, 117608 Singapore
- NUS Suzhou Research Institute (NUSRI), Suzhou Industrial Park, Suzhou, 215123 China
- NUS Graduate School for Integrative Science and Engineering (NGS), National University of Singapore, Singapore, 117456 Singapore
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Chang Y, Dong B, Ma Y, Wei J, Ren Z, Lee C. Vernier effect-based tunable mid-infrared sensor using silicon-on-insulator cascaded rings. OPTICS EXPRESS 2020; 28:6251-6260. [PMID: 32225878 DOI: 10.1364/oe.382226] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2019] [Accepted: 01/15/2020] [Indexed: 06/10/2023]
Abstract
Vernier effect has been captivated as a promising approach to achieve high-performance photonic sensors. However, experimental demonstration of such sensors in mid-infrared (MIR) range, which covers abundant absorption fingerprints of molecules, is still lacking. Here, we report Vernier effect-based thermally tunable photonic sensors using cascaded ring resonators fabricated on the silicon-on-insulator (SOI) platform. The radii and the coupling gaps in two rings are investigated as key design parameters. By applying organic liquids on our device, we observe an envelope shift of 48 nm with a sensitivity of 3000 nm/RIU and an intensity drop of 6.7 dB. Besides, our device can be thermally tuned with a sensitivity of 0.091 nm/mW. Leveraging the characteristic molecular absorption in the MIR, our work offers new possibilities for complex index sensing, which has wide applications in on-chip photonic sensors.
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Qiao Q, Peng C, Xia J, Lee C, Zhou G. Ultra-small photonic crystal (PhC)-based test tool for gas permeability of polymers. OPTICS EXPRESS 2019; 27:35600-35608. [PMID: 31878729 DOI: 10.1364/oe.27.035600] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2019] [Accepted: 10/23/2019] [Indexed: 06/10/2023]
Abstract
We present an ultra-small photonic crystal-based test tool for gas permeability of polymers. It features a fully-etched photonic crystal (PhC) structure occupying an area of 20 µm × 800 µm on silicon-on-insulator wafer. The light-matter interaction in the PhC cavity with deformed Polydimethylsiloxane (PDMS) under pressure difference was investigated with finite element method and finite-difference time-domain method numerically. Next, three PDMS membranes of different mixing ratios were utilized for the characterization of gas permeation flux. The feasibility and effectiveness of the proposed working mechanism are verified through clearly distinguishing the gas permeability of these three testing samples. Compared with conventional test tools, this proposed test tool has fast response while it consumes less testing gas volume in a testing system with reduced footprint. Potentially, it can be integrated into lab-on-a-chip devices to measure gas permeation in nano scale.
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12
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Experiment and Simulation of a Selective Subwavelength Filter with a Low Index Contrast. NANOMATERIALS 2019; 9:nano9101497. [PMID: 31640113 PMCID: PMC6835735 DOI: 10.3390/nano9101497] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/06/2019] [Revised: 09/29/2019] [Accepted: 10/14/2019] [Indexed: 11/16/2022]
Abstract
Subwavelength gratings have been of great interest recently due to their ability to eliminate multiple orders. However, high index contrast ( Δ n ∼ 3 ) is typically achieved using metals or high-index dielectrics surrounded by vacuum in order to maintain good optical selectivity. Here, we theoretically propose and experimentally realize a selective subwavelength grating using an index contrast of Δ n ∼ 1.2 without vacuum. Despite its low index contrast, our simulation and experiments show that good optical selectivity is achieved using the same physics as subwavelength gratings made of high-index contrast. Such polymer-based encapsulated gratings are easier to scale up for use in large-area applications such as photovoltaics and lighting.
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13
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Dong B, Luo X, Zhu S, Hu T, Li M, Hasan D, Zhang L, Chua SJ, Wei J, Chang Y, Ma Y, Vachon P, Lo GQ, Ang KW, Kwong DL, Lee C. Thermal annealing study of the mid-infrared aluminum nitride on insulator (AlNOI) photonics platform. OPTICS EXPRESS 2019; 27:19815-19826. [PMID: 31503736 DOI: 10.1364/oe.27.019815] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/25/2019] [Accepted: 05/28/2019] [Indexed: 05/19/2023]
Abstract
Aluminum nitride on insulator (AlNOI) photonics platform has great potential for mid-infrared applications thanks to the large transparency window, piezoelectric property, and second-order nonlinearity of AlN. However, the deployment of AlNOI platform might be hindered by the high propagation loss. We perform thermal annealing study and demonstrate significant loss improvement in the mid-infrared AlNOI photonics platform. After thermal annealing at 400°C for 2 hours in ambient gas environment, the propagation loss is reduced by half. Bend loss and taper coupling loss are also investigated. The performance of multimode interferometer, directional coupler, and add/drop filter are improved in terms of insertion loss, quality factor, and extinction ratio. Fourier-transform infrared spectroscopy, Raman spectroscopy, and X-ray diffraction spectroscopy suggest the loss improvement is mainly attributed to the reduction of extinction coefficient in the silicon dioxide cladding. Apart from loss improvement, appropriate thermal annealing also helps in reducing thin film stress.
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Sun F, Wei J, Dong B, Ma Y, Chang Y, Tian H, Lee C. Coexistence of air and dielectric modes in single nanocavity. OPTICS EXPRESS 2019; 27:14085-14098. [PMID: 31163862 DOI: 10.1364/oe.27.014085] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2019] [Accepted: 04/25/2019] [Indexed: 06/09/2023]
Abstract
A deterministic design method and experimental demonstration of single photonic crystal nanocavity supporting both air and dielectric modes in the mid-infrared wavelength region are reported here. The coexistence of both modes is realized by a proper design of photonic dispersion to confine air and dielectric bands simultaneously. By adding central mirrors to make the resonance modes be confined at the bandgap edges, high experimental Q-factors of 2.32 × 104 and 1.59 × 104 are achieved at the resonance wavelength of about 3.875μm and 3.728μm for fundamental dielectric and air modes, respectively. Moreover, multiple sets of air and dielectric modes can be realized by introducing central aperiodic mirrors with multiple bandgaps. The realization of coexistence of air and dielectric modes in single nanocavity will offer opportunities for multifunctional devices, paving the way to integrated multi-parameter sensors, filters, nonlinear devices, and compact light sources.
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15
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Dong B, Luo X, Zhu S, Li M, Hasan D, Zhang L, Chua SJ, Wei J, Chang Y, Lo GQ, Ang KW, Kwong DL, Lee C. Aluminum nitride on insulator (AlNOI) platform for mid-infrared photonics. OPTICS LETTERS 2019; 44:73-76. [PMID: 30645551 DOI: 10.1364/ol.44.000073] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2018] [Accepted: 11/20/2018] [Indexed: 05/19/2023]
Abstract
We report an aluminum nitride on insulator platform for mid-infrared (MIR) photonics applications beyond 3 μm. Propagation loss and bending loss are studied, while functional devices such as directional couplers, multimode interferometers, and add/drop filters are demonstrated with high performance. The complementary metal-oxide-semiconductor-compatible aluminum nitride offers advantages ranging from a large transparency window, high thermal and chemical resistance, to piezoelectric tunability and three-dimensional integration capability. This platform can have synergy with other photonics platforms to enable novel applications for sensing and thermal imaging in MIR.
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