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Zhang Y, Lan J, Xie F, Peng M, Liu J, Chan TS, Tan Y. Aligned InS Nanorods for Efficient Electrocatalytic Carbon Dioxide Reduction. ACS APPLIED MATERIALS & INTERFACES 2022; 14:25257-25266. [PMID: 35609249 DOI: 10.1021/acsami.2c01152] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Electrochemical CO2 reduction technology can combine renewable energy sources with carbon capture and storage to convert CO2 into industrial chemicals. However, the catalytic activity under high current density and long-term electrocatalysis process may deteriorate due to agglomeration, catalytic polymerization, element dissolution, and phase change of active substances. Here, we report a scalable and facile method to fabricate aligned InS nanorods by chemical dealloying. The resulting aligned InS nanorods exhibit a remarkable CO2RR activity for selective formate production at a wide potential window, achieving over 90% faradic efficiencies from -0.5 to -1.0 V vs reversible hydrogen electrode (RHE) under gas diffusion cell, as well as continuously long-term operation without deterioration. In situ electrochemical Raman spectroscopy measurements reveal that the *OCHO* species (Bidentate adsorption) are the intermediates that occurred in the reaction of CO2 reduction to formate. Meanwhile, the presence of sulfur can accelerate the activation of H2O to react with CO2, promoting the formation of *OCHO* intermediates on the catalyst surface. Significantly, through additional coupling anodic methanol oxidation reaction (MOR), the unusual two-electrode electrolytic system allows highly energy-efficient and value-added formate manufacturing, thereby reducing energy consumption.
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Affiliation(s)
- Yanlong Zhang
- College of Materials Science and Engineering, State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha, Hunan 410082, China
| | - Jiao Lan
- College of Materials Science and Engineering, State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha, Hunan 410082, China
| | - Feng Xie
- College of Materials Science and Engineering, State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha, Hunan 410082, China
| | - Ming Peng
- College of Materials Science and Engineering, State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha, Hunan 410082, China
| | - Jilei Liu
- College of Materials Science and Engineering, Hunan Joint International Laboratory of Advanced Materials and Technology for Clean Energy, Hunan University, Changsha, Hunan 410082, China
| | - Ting-Shan Chan
- National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan
| | - Yongwen Tan
- College of Materials Science and Engineering, State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha, Hunan 410082, China
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Synthesis of Hexagonal Structured GaS Nanosheets for Robust Femtosecond Pulse Generation. NANOMATERIALS 2022; 12:nano12030378. [PMID: 35159722 PMCID: PMC8839219 DOI: 10.3390/nano12030378] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/22/2021] [Revised: 01/04/2022] [Accepted: 01/21/2022] [Indexed: 02/04/2023]
Abstract
Gallium sulfide (GaS), with a hexagonal structure, has received extensive attention due to its graphene-like structure and derived optical properties. Here, high-quality GaS was obtained via chemical vapor synthesis and then prepared as a saturable absorber by the stamp-assisted localization-transfer technique onto fiber end face. The stability of the material and the laser damage threshold are maintained due to the optimized thickness and the cavity integration form. The potential of the GaS for nonlinear optics is explored by constructing a GaS-based Erbium-doped mode-locked fiber laser. Stable femtosecond (~448 fs) mode-locking operation of the single pulse train is achieved, and the robust mode-locked operation (>30 days) was recorded. Experimental results show the potential of GaS for multi-functional ultrafast high-power lasers and promote continuous research on graphene-like materials in nonlinear optics and photonics.
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Ahmed S, Qiao J, Cheng PK, Saleque AM, Ivan MNAS, Alam TI, Tsang YH. Two-Dimensional Gallium Sulfide as a Novel Saturable Absorber for Broadband Ultrafast Photonics Applications. ACS APPLIED MATERIALS & INTERFACES 2021; 13:61518-61527. [PMID: 34793123 DOI: 10.1021/acsami.1c18155] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) gallium sulfide (GaS) offers a plethora of exceptional electrical and optical properties, allowing it to be used in a wide range of applications, including photodetectors, hydrogen generation, and nonlinear optical devices. In this paper, ultrathin 2D GaS nanosheets are synthesized using the liquid-phase exfoliation method, and the structure, morphology, and chemical composition of the as-prepared nanosheets are extensively investigated. After depositing 2D GaS nanosheets on side polished fibers, successful saturable absorbers (SAs) are fabricated for the first time. The realized modulation depths are 10 and 5.3% at 1 and 1.5 μm, respectively, indicating the wideband saturable absorption performance of the prepared SAs. By integrating GaS-SAs into three different wavelength-based fiber laser cavities, stable mode-locked pulses are achieved, having pulse durations of 46.22 ps (1 μm), 614 fs (1.5 μm), and 1.02 ps (2 μm), respectively. Additionally, different orders of harmonic mode-locked pulses with the highest repetition rate of 0.55 GHz (45th order) and Q-switched pulses with the shortest pulse duration of 2.2 μs are obtained in the telecommunication waveband. These findings suggest that 2D GaS has a lot of potential for broadband ultrafast photonics in nonlinear photonics devices.
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Affiliation(s)
- Safayet Ahmed
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon 99077, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen, Guangdong 518057, People's Republic of China
| | - Junpeng Qiao
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon 99077, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen, Guangdong 518057, People's Republic of China
| | - Ping Kwong Cheng
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon 99077, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen, Guangdong 518057, People's Republic of China
| | - Ahmed Mortuza Saleque
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon 99077, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen, Guangdong 518057, People's Republic of China
| | - Md Nahian Al Subri Ivan
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon 99077, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen, Guangdong 518057, People's Republic of China
| | - Tawsif Ibne Alam
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon 99077, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen, Guangdong 518057, People's Republic of China
| | - Yuen Hong Tsang
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon 99077, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen, Guangdong 518057, People's Republic of China
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Zhang YN, Song ZY, Qiao D, Li XH, Guang Z, Li SP, Zhou LB, Chen XH. 2D van der Waals materials for ultrafast pulsed fiber lasers: review and prospect. NANOTECHNOLOGY 2021; 33:082003. [PMID: 34731847 DOI: 10.1088/1361-6528/ac3611] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2021] [Accepted: 11/03/2021] [Indexed: 06/13/2023]
Abstract
2D van der Waals materials are crystals composed of atomic layers, which have atomic thickness scale layers and rich distinct properties, including ultrafast optical response, surface effects, light-mater interaction, small size effects, quantum effects and macro quantum tunnel effects. With the exploration of saturable absorption characteristic of 2D van der Waals materials, a series of potential applications of 2D van der Waals materials as high threshold, broadband and fast response saturable absorbers (SAs) in ultrafast photonics have been proposed and confirmed. Herein, the photoelectric characteristics, nonlinear characteristic measurement technique of 2D van der Waals materials and the preparation technology of SAs are systematically described. Furthermore, the ultrafast pulsed fiber lasers based on classical 2D van der Waals materials including graphene, transition metal chalcogenides, topological insulators and black phosphorus have been fully summarized and analyzed. On this basis, opportunities and directions in this field, as well as the research results of ultrafast pulsed fiber lasers based on the latest 2D van der Waals materials (such as PbO, FePSe3, graphdiyne, bismuthene, Ag2S and MXene etc), are reviewed and summarized.
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Affiliation(s)
- Ya-Ni Zhang
- Shaanxi University of Science & Technology, Department of Physics, Xi'an, Shaanxi, 710021, People's Republic of China
| | - Zhuo-Ying Song
- Shaanxi University of Science & Technology, Department of Physics, Xi'an, Shaanxi, 710021, People's Republic of China
| | - Dun Qiao
- University of South Wales, Wireless and Optoelectronics Research and Innovation Centre, Faculty of Computing, Engineering and Science, Pontypridd CF37 1DL, United Kingdom
| | - Xiao-Hui Li
- Shaanxi Normal University, College of Physics and Information Technology, Xi'an, Shaanxi, 710119, People's Republic of China
| | - Zhe Guang
- School of Physics, Georgia Institute of Technology, 837 State Street, Atlanta, GA 30332, United States of America
- School of Computer Science, Georgia Institute of Technology, 266 Ferst Drive, Atlanta, GA 30332, United States of America
| | - Shao-Peng Li
- Shaanxi University of Science & Technology, Department of Physics, Xi'an, Shaanxi, 710021, People's Republic of China
| | - Li-Bin Zhou
- Shaanxi University of Science & Technology, Department of Physics, Xi'an, Shaanxi, 710021, People's Republic of China
| | - Xiao-Han Chen
- Shandong University, School of Information Science and Engineering, Shandong Provincial Key Laboratory of Laser Technology and Application, Jinan, Shandong, 250100, People's Republic of China
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Yu Q, Guo K, Dai Y, Deng H, Wang T, Wu H, Xu Y, Shi X, Wu J, Zhang K, Zhou P. Black phosphorus for near-infrared ultrafast lasers in the spatial/temporal domain. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:503001. [PMID: 34544055 DOI: 10.1088/1361-648x/ac2862] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2021] [Accepted: 09/20/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials have attracted extensive interests due to their wide range of electronic and optical properties. After continuous and extensive research, black phosphorus (BP), a novel member of 2D layered semiconductor material, benefit for the unique in-plane anisotropic structure, controllable direct bandgap characteristic, and high charge carrier mobility, has attracted tremendous attention and successfully applied in ultrafast pulse generation. This article, which focuses on near-infrared ultrafast laser demonstration of BP, present discussion of preparation methods for high quality BP nanosheet, various BP based ultrafast lasers in the spatial/temporal domain, and the future research needs.
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Affiliation(s)
- Qiang Yu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
- I-Lab & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, People's Republic of China
| | - Kun Guo
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Yongping Dai
- I-Lab & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, People's Republic of China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People's Republic of China
| | - Haiqin Deng
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Tao Wang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Hanshuo Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Yijun Xu
- I-Lab & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, People's Republic of China
| | - Xinyao Shi
- Institute of Quantum Sensing of Wuxi, Wuxi, People's Republic of China
| | - Jian Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Kai Zhang
- I-Lab & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, People's Republic of China
| | - Pu Zhou
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
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Yao H, Zhang C, Wang Q, Li J, Yu Y, Xu† F, Wang B, Wei Y. Tunable electronic properties and band alignments of InS–arsenene heterostructures via external strain and electric field. NEW J CHEM 2021. [DOI: 10.1039/d0nj05787h] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
van der Waals heterostructures (vdWHs) based on two-dimensional (2D) materials have been extensively recognized as promising candidates for fabricating multi-functional novel devices.
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Affiliation(s)
- Hui Yao
- Shenzhen Key Laboratory of Advanced Thin Films and Applications
- College of Physics and Optoelectronic Engineering
- Shenzhen University
- Shenzhen
- China
| | - Chao Zhang
- Beijing Computational Science Research Center
- Beijing
- China
| | - Qiang Wang
- Shenzhen Key Laboratory of Advanced Thin Films and Applications
- College of Physics and Optoelectronic Engineering
- Shenzhen University
- Shenzhen
- China
| | - Jianwei Li
- Shenzhen Key Laboratory of Advanced Thin Films and Applications
- College of Physics and Optoelectronic Engineering
- Shenzhen University
- Shenzhen
- China
| | - Yunjin Yu
- Shenzhen Key Laboratory of Advanced Thin Films and Applications
- College of Physics and Optoelectronic Engineering
- Shenzhen University
- Shenzhen
- China
| | - Fuming Xu†
- Shenzhen Key Laboratory of Advanced Thin Films and Applications
- College of Physics and Optoelectronic Engineering
- Shenzhen University
- Shenzhen
- China
| | - Bin Wang
- Shenzhen Key Laboratory of Advanced Thin Films and Applications
- College of Physics and Optoelectronic Engineering
- Shenzhen University
- Shenzhen
- China
| | - Yadong Wei
- Shenzhen Key Laboratory of Advanced Thin Films and Applications
- College of Physics and Optoelectronic Engineering
- Shenzhen University
- Shenzhen
- China
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Li H, Zhou Z, Wang H. Tunable Schottky barrier in InTe/graphene van der Waals heterostructure. NANOTECHNOLOGY 2020; 31:335201. [PMID: 32348976 DOI: 10.1088/1361-6528/ab8e77] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The structures and electronic properties of InTe/graphene van der Waals heterostructures are systematically investigated using the first-principles calculations. The electronic properties of InTe monolayer and graphene are well preserved respectively and the bandgap energy of graphene is opened to 36.5 meV in the InTe/graphene heterostructure. An n-type Schottky contact is formed in InTe/graphene heterostructure at the equilibrium state. There is a transformation between n-type and p-type Schottky contact when the interlayer distance is smaller than 3.56 Å or the applied electric field is larger than -0.06 V Å-1. In addition, the Schottky contact converts to Ohmic contact when the applied vertical electric field is larger than 0.11 V Å-1 or smaller than -0.13 V Å-1.
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Affiliation(s)
- Hengheng Li
- Henan Key Laboratory of Photovoltaic Materials, and School of Physics, Henan Normal University, Xinxiang 453007, People's Republic of China
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Tu CL, Lin KI, Pu J, Chung TF, Hsiao CN, Huang AC, Yang JR, Takenobu T, Chen CH. CVD growth of large-area InS atomic layers and device applications. NANOSCALE 2020; 12:9366-9374. [PMID: 32338265 DOI: 10.1039/d0nr01104e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Group-III monochalcogenides of two-dimensional (2D) layered materials have attracted widespread attention among scientists due to their unique electronic performance and interesting chemical and physical properties. Indium sulfide (InS) is attracting increasing interest from scientists because it has two distinct crystal structures. However, studies on the synthesis of highly crystalline, large-area, and atomically thin-film InS have not been reported thus far. Here, the chemical vapor deposition (CVD) synthesis method of atomic InS crystals has been reported in this paper. The direct chemical vapour phase reaction of metal oxides with chalcogen precursors produces a large-sized hexagonal crystal structure and atomic-thickness InS flakes or films. The InS atomic films are merged with a plurality of triangular InS crystals that are uniform and entire and have surface areas of 1 cm2 and controllable thicknesses in bilayers or trilayers. The properties of the as-grown highly crystalline samples were characterized by spectroscopic and microscopic measurements. The ion-gel gated InS field-effect transistors (FETs) reveal n-type transport behavior, and have an on-off current ratio of >103 and a room-temperature electron mobility of ∼2 cm2 V-1 s-1. Moreover, our CVD InS can be transferred from mica to any substrates, so various 2D materials can be reassembled into vertically stacked heterostructures, thus facilitating the development of heterojunctions and exploration of the properties and applications of their interactions.
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Affiliation(s)
- Chien-Liang Tu
- Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
| | - Kuang-I Lin
- Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan
| | - Jiang Pu
- Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
| | - Tsai-Fu Chung
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chien-Nan Hsiao
- Taiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu 30076, Taiwan
| | - An-Ci Huang
- Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
| | - Jer-Ren Yang
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Taishi Takenobu
- Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
| | - Chang-Hsiao Chen
- Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
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Mysliwiec J. Non-Linear Optical Effects in Nanomaterials. NANOMATERIALS 2019; 9:nano9121717. [PMID: 31810190 PMCID: PMC6956228 DOI: 10.3390/nano9121717] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Download PDF] [Subscribe] [Scholar Register] [Received: 10/23/2019] [Accepted: 11/12/2019] [Indexed: 12/02/2022]
Affiliation(s)
- Jaroslaw Mysliwiec
- Advanced Materials Engineering and Modelling Group, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland
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