1
|
Bhattarai R, Bahadur Thapa R, Das Mulmi D, Ram Ghimire R. Fabrication of alcohol sensor using undoped and Al doped ZnO nanostructure film with polymer electrolyte gating. Heliyon 2024; 10:e32281. [PMID: 38961912 PMCID: PMC11219309 DOI: 10.1016/j.heliyon.2024.e32281] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/14/2023] [Revised: 05/30/2024] [Accepted: 05/31/2024] [Indexed: 07/05/2024] Open
Abstract
We report the fabrication of two terminal and three terminal gas sensor using Al-doped ZnO nanostructured-films and polymer electrolyte gate dielectric on glass substrate using vacuum free chemical method. The Al doped ZnO films are characterized by UV-vis Spectrometer, SEM, EDX and XRD. The characterization results have revealed the polycrystalline structure of both undoped and doped ZnO; with loosely packed, porous, and spherical granny nanostructure with mean grain size 20-10 nm and bandgap of the films is within the range of 3.12-3.16 eV. The conductivity of the ZnO film is tuned by Al concentration and the maximum value of conductivity was observed in 3 % Al doped ZnO films. Similarly, the best performance index of TFT such as current ON/OFF ratio, high transconductance and low threshold voltage was observed in 3 % Al doping concentration. The ordinary (two-terminal) sensor and three-terminal (FET) sensors' responses towards three different concentrations 50, 250, 500 ppm of ethanol and methanol vapors have been studied. The sensitivity of the film is modulated by Al concentration and higher value of sensitivity was achieved at 3 % Al doped ZnO films. The use of polymer electrolyte enhanced the sensitivity of the device which is more effective in methanol vapor. The Response-Recovery time of the sensor is significantly improved in three terminal devices than the two terminal devices.
Collapse
Affiliation(s)
- Raju Bhattarai
- Patan Multiple Campus, Department of Physics, Patandhoka, Lalitpur, Nepal
| | - Ram Bahadur Thapa
- Patan Multiple Campus, Department of Physics, Patandhoka, Lalitpur, Nepal
| | | | - Rishi Ram Ghimire
- Patan Multiple Campus, Department of Physics, Patandhoka, Lalitpur, Nepal
| |
Collapse
|
2
|
Liang L, Jiang Z, Luo Z, Liu K, Liu N, Hu Q, Liu Y. Low voltage electric-double-layer transistor nonenzymic erythromycin sensors based on molecularly imprinted polymers. Anal Chim Acta 2024; 1305:342589. [PMID: 38677843 DOI: 10.1016/j.aca.2024.342589] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/21/2023] [Revised: 04/01/2024] [Accepted: 04/07/2024] [Indexed: 04/29/2024]
Abstract
Erythromycin (Ery) is a commonly used antibiotic that can be found ubiquitously in water bodies. The increasing apprehension over the adverse effects of antibiotic remnants in aquatic environments necessitates the prompt advancement of erythromycin detection techniques that are both highly sensitive and compact. Here, we propose a non-enzyme Ery sensor that integrates a mesoporous SiO2-based low-voltage oxide electric-double-layer transistor (EDLT) with a molecular imprinting technique, featuring a molecularly imprinted polymers (MIP) functionalized gate electrode. The mesoporous SiO2-based oxide transistor exhibits excellent electrical characteristics, including an operating voltage of small than 1.0 V, an on/off ratio exceeding 106 and a mobility of 14.95 cm2V-1s-1. At an ultra-low operating voltage within 0.5 V, the sensor exhibits a linear response to the concentration range of 1 nM-10 μM of Ery, with a detection limit of 0.22 nM and a sensitivity of 23.3 mV dec-1. Besides, the single-spike dynamic sensing mode effectively reduces the power consumption of the detection. The proposed sensor provides a rapid and convenient approach to detect Ery in aqueous environments, with benefits such as miniaturization, high sensitivity, and simplicity.
Collapse
Affiliation(s)
- Linzi Liang
- School of Materials, Sun Yat-sen University, Shenzhen, 518107, PR China
| | - Zhengdong Jiang
- School of Materials, Sun Yat-sen University, Shenzhen, 518107, PR China
| | - Zhiyuan Luo
- School of Materials, Sun Yat-sen University, Shenzhen, 518107, PR China
| | - Kekang Liu
- School of Materials, Sun Yat-sen University, Shenzhen, 518107, PR China
| | - Ning Liu
- School of Science, Nanchang Institute of Technology, Nanchang, 330029, PR China
| | - Qichang Hu
- Fujian Key Laboratory of Agricultural Information Sensoring Technology, College of Mechanical and Electrical Engineering, Fujian Agriculture and Forestry University, Fuzhou, Fujian, 350002, PR China.
| | - Yanghui Liu
- School of Materials, Sun Yat-sen University, Shenzhen, 518107, PR China.
| |
Collapse
|
3
|
Lin HA, Weng YH, Mulia T, Liu CL, Lin YC, Yu YY, Chen WC. Electrical Double-Layer Transistors Comprising Block Copolymer Electrolytes for Low-Power-Consumption Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:25042-25052. [PMID: 38706304 PMCID: PMC11103659 DOI: 10.1021/acsami.4c01959] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Revised: 04/24/2024] [Accepted: 04/26/2024] [Indexed: 05/07/2024]
Abstract
Electrical double-layer transistors (EDLTs) have received extensive research attention owing to their exciting advantages of low working voltage, high biocompatibility, and sensitive interfacial properties in ultrasensitive portable sensing applications. Therefore, it is of great interest to reduce photodetectors' operating voltage and power consumption by utilizing photo-EDLT. In this study, a series of block copolymers (BCPs) of poly(4-vinylpyridine)-block-poly(ethylene oxide) (P4VP-b-PEO) with different compositions were applied to formulate polyelectrolyte with indigo carmine salt in EDLT. Accordingly, PEO conduces ion conduction in the BCP electrolyte and enhances the carrier transport capability in the semiconducting channel; P4VP boosts the photocurrent by providing charge-trapping sites during light illumination. In addition, the severe aggregation of PEO is mitigated by forming a BCP structure with P4VP, enhancing the stability and photoresponse of the photo-EDLT. By optimizing the BCP composition, EDLT comprising P4VP16k-b-PEO5k and indigo carmine provides the highest specific detectivity of 2.1 × 107 Jones, along with ultralow power consumptions of 0.59 nW under 450 nm light illumination and 0.32 pW under dark state. The results indicate that photo-EDLT comprising the BCP electrolyte is a practical approach to reducing phototransistors' operating voltage and power consumption.
Collapse
Affiliation(s)
- Hung-An Lin
- Department
of Materials Engineering, Ming Chi University
of Technology, New Taipei
City 24301, Taiwan
| | - Yi-Hsun Weng
- Department
of Chemical Engineering, National Taiwan
University, Taipei 10617, Taiwan
| | - Tiffany Mulia
- Department
of Chemical Engineering, National Taiwan
University, Taipei 10617, Taiwan
| | - Cheng-Liang Liu
- Advanced
Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Department
of Materials Science and Engineering, National
Taiwan University, Taipei 10617, Taiwan
| | - Yan-Cheng Lin
- Advanced
Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Department
of Chemical Engineering, National Cheng
Kung University, Tainan 70101, Taiwan
| | - Yang-Yen Yu
- Department
of Materials Engineering, Ming Chi University
of Technology, New Taipei
City 24301, Taiwan
| | - Wen-Chang Chen
- Department
of Materials Engineering, Ming Chi University
of Technology, New Taipei
City 24301, Taiwan
- Advanced
Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| |
Collapse
|
4
|
Hwang C, Baek S, Song Y, Lee WJ, Park S. Wide-range and selective detection of SARS-CoV-2 DNA via surface modification of electrolyte-gated IGZO thin-film transistors. iScience 2024; 27:109061. [PMID: 38361625 PMCID: PMC10867417 DOI: 10.1016/j.isci.2024.109061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 11/27/2023] [Accepted: 01/25/2024] [Indexed: 02/17/2024] Open
Abstract
The 2019 coronavirus pandemic resulted in a massive global healthcare crisis, highlighting the necessity to develop effective and reproducible platforms capable of rapidly and accurately detecting SARS-CoV-2. In this study, we developed an electrolyte-gated indium-gallium-zinc-oxide (IGZO) thin-film transistor with sequential surface modification to realize the low limit of detection (LoD <50 fM) and a wide detection range from 50 fM to 5 μM with good linearity (R2 = 0.9965), and recyclability. The surface chemical modification was achieved to anchor the single strand of SARS-CoV-2 DNA via selective hybridization. Moreover, the minute electrical signal change following the chemical modification was investigated by in-depth physicochemical analytical techniques. Finally, we demonstrate fully recyclable biosensors based on oxygen plasma treatment. Owing to its cost-effective fabrication, rapid detection at the single-molecule level, and low detection limit, the proposed biosensor can be used as a point-of-care platform to perform timely and effective SARS-CoV-2 detection.
Collapse
Affiliation(s)
- Chuljin Hwang
- Department of Electrical and Computer Engineering, Ajou University, Suwon, Gyeonggi-do 16499, Republic of Korea
| | - Seokhyeon Baek
- Department of Intelligence Semiconductor Engineering, Ajou University, Suwon, Gyeonggi-do 16499, Republic of Korea
| | - Yoonseok Song
- Department of Intelligence Semiconductor Engineering, Ajou University, Suwon, Gyeonggi-do 16499, Republic of Korea
| | - Won-June Lee
- Department of Chemistry, Purdue University, West Lafayette, IN 47907, USA
| | - Sungjun Park
- Department of Electrical and Computer Engineering, Ajou University, Suwon, Gyeonggi-do 16499, Republic of Korea
- Department of Intelligence Semiconductor Engineering, Ajou University, Suwon, Gyeonggi-do 16499, Republic of Korea
| |
Collapse
|
5
|
Liu X, Sun C, Ye X, Zhu X, Hu C, Tan H, He S, Shao M, Li RW. Neuromorphic Nanoionics for Human-Machine Interaction: From Materials to Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2311472. [PMID: 38421081 DOI: 10.1002/adma.202311472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 02/06/2024] [Indexed: 03/02/2024]
Abstract
Human-machine interaction (HMI) technology has undergone significant advancements in recent years, enabling seamless communication between humans and machines. Its expansion has extended into various emerging domains, including human healthcare, machine perception, and biointerfaces, thereby magnifying the demand for advanced intelligent technologies. Neuromorphic computing, a paradigm rooted in nanoionic devices that emulate the operations and architecture of the human brain, has emerged as a powerful tool for highly efficient information processing. This paper delivers a comprehensive review of recent developments in nanoionic device-based neuromorphic computing technologies and their pivotal role in shaping the next-generation of HMI. Through a detailed examination of fundamental mechanisms and behaviors, the paper explores the ability of nanoionic memristors and ion-gated transistors to emulate the intricate functions of neurons and synapses. Crucial performance metrics, such as reliability, energy efficiency, flexibility, and biocompatibility, are rigorously evaluated. Potential applications, challenges, and opportunities of using the neuromorphic computing technologies in emerging HMI technologies, are discussed and outlooked, shedding light on the fusion of humans with machines.
Collapse
Affiliation(s)
- Xuerong Liu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Cui Sun
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xiaoyu Ye
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xiaojian Zhu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Cong Hu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Hongwei Tan
- Department of Applied Physics, Aalto University, Aalto, FI-00076, Finland
| | - Shang He
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Mengjie Shao
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| |
Collapse
|
6
|
Wang J, Li H, Tavakol M, Serva A, Nener B, Parish G, Salanne M, Warr GG, Voïtchovsky K, Atkin R. Ions Adsorbed at Amorphous Solid/Solution Interfaces Form Wigner Crystal-like Structures. ACS NANO 2024; 18:1181-1194. [PMID: 38117206 DOI: 10.1021/acsnano.3c11349] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
When a surface is immersed in a solution, it usually acquires a charge, which attracts counterions and repels co-ions to form an electrical double layer. The ions directly adsorbed to the surface are referred to as the Stern layer. The structure of the Stern layer normal to the interface was described decades ago, but the lateral organization within the Stern layer has received scant attention. This is because instrumental limitations have prevented visualization of the ion arrangements except for atypical, model, crystalline surfaces. Here, we use high-resolution amplitude modulated atomic force microscopy (AFM) to visualize in situ the lateral structure of Stern layer ions adsorbed to polycrystalline gold, and amorphous silica and gallium nitride (GaN). For all three substrates, when the density of ions in the layer exceeds a system-dependent threshold, correlation effects induce the formation of close packed structures akin to Wigner crystals. Depending on the surface and the ions, the Wigner crystal-like structure can be hexagonally close packed, cubic, or worm-like. The influence of the electrolyte concentration, species, and valence, as well as the surface type and charge, on the Stern layer structures is described. When the system parameters are changed to reduce the Stern layer ion surface excess below the threshold value, Wigner crystal-like structures do not form and the Stern layer is unstructured. For gold surfaces, molecular dynamics (MD) simulations reveal that when sufficient potential is applied to the surface, ion clusters form with dimensions similar to the Wigner crystal-like structures in the AFM images. The lateral Stern layer structures presented, and in particular the Wigner crystal-like structures, will influence diverse applications in chemistry, energy storage, environmental science, nanotechnology, biology, and medicine.
Collapse
Affiliation(s)
- Jianan Wang
- School of Molecular Sciences, The University of Western Australia, Perth 6009, Australia
| | - Hua Li
- School of Molecular Sciences, The University of Western Australia, Perth 6009, Australia
- Centre for Microscopy, Characterisation and Analysis, The University of Western Australia, Perth 6009, Australia
| | - Mahdi Tavakol
- Department of Physics, Durham University, Durham DH1 3LE, U.K
| | - Alessandra Serva
- Sorbonne Université, CNRS, Physicochimie des Électrolytes et Nanosystèmes Interfaciaux, PHENIX, Paris F-75005, France
| | - Brett Nener
- School of Engineering, The University of Western Australia, Perth 6009, Australia
| | - Giacinta Parish
- School of Engineering, The University of Western Australia, Perth 6009, Australia
| | - Mathieu Salanne
- Sorbonne Université, CNRS, Physicochimie des Électrolytes et Nanosystèmes Interfaciaux, PHENIX, Paris F-75005, France
| | - Gregory G Warr
- School of Chemistry and Sydney Nano Institute, The University of Sydney, Sydney 2006, Australia
| | | | - Rob Atkin
- School of Molecular Sciences, The University of Western Australia, Perth 6009, Australia
| |
Collapse
|
7
|
Lee D, Jung D, Jiang F, Junek GV, Park J, Liu H, Kong Y, Wang A, Kim Y, Choi KS, Wang J, Wang H. A Multi-Functional CMOS Biosensor Array With On-Chip DEP-Assisted Sensing for Rapid Low-Concentration Analyte Detection and Close-Loop Particle Manipulation With No External Electrodes. IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS 2023; 17:1214-1226. [PMID: 38096094 DOI: 10.1109/tbcas.2023.3343068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/19/2023]
Abstract
This article presents a fully-integrated dielectrophoresis (DEP)-assisted multi-functional CMOS biosensor array chip with 4096 working electrodes (WEs), 12288 photodiodes (PDs), reference electrodes (REs), and counter electrodes (CEs), while each WE and photodiode can be reconfigured to support on-chip DEP actuation, electrochemical potentiostat, optical shadow imaging, and complex impedance sensing. The proposed CMOS biosensor is an example of an actuation-assisted label-free biosensor for the rapid sensing of low-concentration analytes. The DEP actuator of the proposed CMOS biosensor does not require any external electrode. Instead, on-chip WE pairs can be re-used for DEP actuation to simplify the sensor array design. The CMOS biosensor is implemented in a standard 130-nm BiCMOS process. Theoretical analyses and finite element method (FEM) simulations of the on-chip DEP operations are conducted as proof of concept. Biological assay measurements (DEP actuation/electrochemical potentiostat/impedance sensing) with E.coli bacteria and microbeads (optical shadow imaging) demonstrate rapid detection of low-concentration analytes and simultaneous manipulation and detection of large particles. The on-chip DEP operations draw the analytes closer to the sensor electrode surface, which overcomes the diffusion limit and accelerates low-concentration analyte sensing. Moreover, the DEP-based movement of large particles can be readily detected by on-chip photodiode arrays to achieve close-loop manipulation and sensing of particles and droplets. These show the unique advantages of the DEP-assisted multi-functional biosensor.
Collapse
|
8
|
Gao Y, Zhang H, Song B, Zhao C, Lu Q. Electric Double Layer Based Epidermal Electronics for Healthcare and Human-Machine Interface. BIOSENSORS 2023; 13:787. [PMID: 37622873 PMCID: PMC10452760 DOI: 10.3390/bios13080787] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2023] [Revised: 07/25/2023] [Accepted: 07/31/2023] [Indexed: 08/26/2023]
Abstract
Epidermal electronics, an emerging interdisciplinary field, is advancing the development of flexible devices that can seamlessly integrate with the skin. These devices, especially Electric Double Layer (EDL)-based sensors, overcome the limitations of conventional electronic devices, offering high sensitivity, rapid response, and excellent stability. Especially, Electric Double Layer (EDL)-based epidermal sensors show great potential in the application of wearable electronics to detect biological signals due to their high sensitivity, fast response, and excellent stability. The advantages can be attributed to the biocompatibility of the materials, the flexibility of the devices, and the large capacitance due to the EDL effect. Furthermore, we discuss the potential of EDL epidermal electronics as wearable sensors for health monitoring and wound healing. These devices can analyze various biofluids, offering real-time feedback on parameters like pH, temperature, glucose, lactate, and oxygen levels, which aids in accurate diagnosis and effective treatment. Beyond healthcare, we explore the role of EDL epidermal electronics in human-machine interaction, particularly their application in prosthetics and pressure-sensing robots. By mimicking the flexibility and sensitivity of human skin, these devices enhance the functionality and user experience of these systems. This review summarizes the latest advancements in EDL-based epidermal electronic devices, offering a perspective for future research in this rapidly evolving field.
Collapse
Affiliation(s)
- Yuan Gao
- School of CHIPS, XJTLU Entrepreneur College (Taicang), Xi’an Jiaotong-Liverpool University, 111 Taicang Avenue, Taicang 215488, China; (Y.G.); (H.Z.); (B.S.)
| | - Hanchu Zhang
- School of CHIPS, XJTLU Entrepreneur College (Taicang), Xi’an Jiaotong-Liverpool University, 111 Taicang Avenue, Taicang 215488, China; (Y.G.); (H.Z.); (B.S.)
| | - Bowen Song
- School of CHIPS, XJTLU Entrepreneur College (Taicang), Xi’an Jiaotong-Liverpool University, 111 Taicang Avenue, Taicang 215488, China; (Y.G.); (H.Z.); (B.S.)
| | - Chun Zhao
- School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China;
| | - Qifeng Lu
- School of CHIPS, XJTLU Entrepreneur College (Taicang), Xi’an Jiaotong-Liverpool University, 111 Taicang Avenue, Taicang 215488, China; (Y.G.); (H.Z.); (B.S.)
| |
Collapse
|
9
|
Chen S, Sun Y, Fan X, Xu Y, Chen S, Zhang X, Man B, Yang C, Du J. Review on two-dimensional material-based field-effect transistor biosensors: accomplishments, mechanisms, and perspectives. J Nanobiotechnology 2023; 21:144. [PMID: 37122015 PMCID: PMC10148958 DOI: 10.1186/s12951-023-01898-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2022] [Accepted: 04/16/2023] [Indexed: 05/02/2023] Open
Abstract
Field-effect transistor (FET) is regarded as the most promising candidate for the next-generation biosensor, benefiting from the advantages of label-free, easy operation, low cost, easy integration, and direct detection of biomarkers in liquid environments. With the burgeoning advances in nanotechnology and biotechnology, researchers are trying to improve the sensitivity of FET biosensors and broaden their application scenarios from multiple strategies. In order to enable researchers to understand and apply FET biosensors deeply, focusing on the multidisciplinary technical details, the iteration and evolution of FET biosensors are reviewed from exploring the sensing mechanism in detecting biomolecules (research direction 1), the response signal type (research direction 2), the sensing performance optimization (research direction 3), and the integration strategy (research direction 4). Aiming at each research direction, forward perspectives and dialectical evaluations are summarized to enlighten rewarding investigations.
Collapse
Affiliation(s)
- Shuo Chen
- School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China
| | - Yang Sun
- Beijing Key Laboratory for Bioengineering and Sensing Technology, School of Chemistry and Biological Engineering, University of Science and Technology, 30 Xueyuan Road, Haidian District, Beijing, 100083, People's Republic of China
| | - Xiangyu Fan
- School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China
| | - Yazhe Xu
- School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China
| | - Shanshan Chen
- School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China
| | - Xinhao Zhang
- School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China
| | - Baoyuan Man
- School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China
| | - Cheng Yang
- School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China.
| | - Jun Du
- School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China.
| |
Collapse
|
10
|
Katayama R, Sakata T. Effect of Surface Modification on the Fundamental Electrical Characteristics of Solution-Gated Indium Tin Oxide-Based Thin-Film Transistor Fabricated by One-Step Sputtering. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:4282-4290. [PMID: 36930607 DOI: 10.1021/acs.langmuir.2c03225] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Our solution-gated indium tin oxide (ITO)-based thin-film transistor (TFT) produced by single-step sputtering has great future potential in bioelectronics. In particular, chemical modifications of the ITO channel surface are expected to contribute to biomolecular recognition with ultrahigh sensitivity owing to a remarkably steep subthreshold slope (SS). In this study, we investigate the effect of a chemical modification of an aptamer as a receptor molecule at the ITO channel surface on the electrical characteristics of the solution-gated TFT. In this case, a SARS-CoV-2 aptamer is immobilized using a spacer molecule on an aryl diazonium monolayer that is electrochemically deposited with a radical scavenger. The monolayer is expected to not only passivate the ITO channel surface but also change the electron density in the ITO channel owing to the reduction reaction of aryl diazonium salts. Indeed, the electrochemical deposition of aryl diazonium salts decreases the leakage current through the ITO channel surface and provides a steep SS, which is near the thermal limit at 300 K, owing to the decrease in depletion layer capacitance. After the aptamer immobilization, the leakage current and SS unexpectedly return close to their original values before the surface modifications. This finding indicates that aptamer molecules should be carefully used because their negative charges would attract cations around the detection interface. Eventually, the solution-gated ITO-based TFT with the SARS-CoV-2 aptamer clearly responds to inactivated SARS-CoV-2 particles owing to the successful surface modification.
Collapse
Affiliation(s)
- Ritsu Katayama
- Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Toshiya Sakata
- Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| |
Collapse
|
11
|
Etman A, Ibrahim A, Darwish F, Qasim K. A 10 years-developmental study on conducting polymers composites for supercapacitors electrodes: a review for extensive data interpretation. J IND ENG CHEM 2023. [DOI: 10.1016/j.jiec.2023.03.008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/11/2023]
|
12
|
Kim DH, Cho HS, Kim JH, Jo DA, Oh HG, Jang BK, Song KS. The Integration of Reference Electrode for ISFET Ion Sensors Using Fluorothiophenol-Treated rGO. BIOSENSORS 2023; 13:89. [PMID: 36671924 PMCID: PMC9855950 DOI: 10.3390/bios13010089] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/13/2022] [Revised: 01/03/2023] [Accepted: 01/03/2023] [Indexed: 06/17/2023]
Abstract
Ion-sensitive field-effect transistors (ISFETs) detect specific ions in solutions that enable straightforward, fast, and inexpensive sensors compared to other benchtop equipment. However, a conventional reference electrode (RE) such as Ag/AgCl is limited on the miniaturization of the sensor. We introduce reduced graphene oxide (rGO), which serves as a new RE, when fluorinated (F-rGO) using fluorothiophenol through the π-π interaction. The circular RE is integrated between a fabricated microscale two-channel ISFET, which is capable of detecting two kinds of ions on an indium tin oxide (ITO) thin-film substrate, using the photolithography process. F-rGO bound to this circular region to function as an RE in the ISFETs sensor, which operated stably in solution and showed a relatively high transconductance (gm) value (1.27 mS), low drift characteristic (3.2 mV), and low hysteresis voltage (±0.05 mV). It detected proton (H+) ions in a buffer solution with high sensitivity (67.1 mV/pH). We successfully detected Na+ (62.1 mV/dec) and K+ (57.6 mV/dec) ions in human patient urine using a two-channel ISFET with the F-rGO RE. The F-rGO RE will be a suitable component in the fabrication of low-cost, mass-produced, and disposable ISFETs sensors.
Collapse
Affiliation(s)
- Dae Hoon Kim
- Department of Medical IT Convergence Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of Korea
| | - Hae Shin Cho
- Department of Medical IT Convergence Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of Korea
| | - Jin Heung Kim
- Department of Medical IT Convergence Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of Korea
| | - Da Ae Jo
- Center for Nano Bio Development, National NanoFab Center (NNFC), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hong Gi Oh
- Department of Research and Development, MCK Tech Co., Ltd., Daejeon 34013, Republic of Korea
| | - Byoung Kuk Jang
- Department of Internal Medicine, Keimyung University School of Medicine, Daegu 41931, Republic of Korea
| | - Kwang Soup Song
- Department of Medical IT Convergence Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of Korea
| |
Collapse
|
13
|
Kimura D, Yotsuya S, Yoshimura T, Fujimura N, Kiriya D. Strong Photoluminescence Enhancement in Molybdenum Disulfide in Aqueous Media. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2022; 38:13048-13054. [PMID: 36252205 DOI: 10.1021/acs.langmuir.2c01601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The interface between conventional semiconductors and aqueous ionic solutions is an important target in chemistry and materials science. Recently, a wide variety of research has been done on transition-metal dichalcogenides (TMDCs) for use as 2D layered semiconductors, and their optoelectronic properties have been widely explored. One representative TMDC, monolayer (1L) MoS2, is known to show a photoluminescence (PL) signal of a direct band gap nature, and the PL intensity is dependent on the carrier concentration. Various methods of 1L MoS2 carrier modulation have been shown to enhance the PL intensity in dry environments. In contrast, enhancement in an aqueous environment is limited, and a strategy to design an interface with aqueous media has not yet been established. One proposed idea was an aqueous acid interface; however, the enhancement of the PL with this method was usually minimal, about 1 order of magnitude. In this study, we demonstrate a method to achieve strong PL enhancement in 1L MoS2 in an aqueous media by incorporating bis(trifluoromethane)sulfonyl anion (TFSI- ion) in an acidic environment. With the addition of the TFSI- ion in an acidic environment, the enhancement factor of the PL in 1L MoS2 is more than 100 times greater than its PL intensity in water. The molecular anion is the key factor, as the TFSI- ion facilitates the oxidation of MoS2. This anionic effect is the additional factor needed to modulate the optoelectronic properties of 2D semiconductors in aqueous media. The proposed idea could have potential applications for biochemical sensors in aqueous situations.
Collapse
Affiliation(s)
- Daisuke Kimura
- Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai-shi, Osaka 599-8531, Japan
| | - Shotaro Yotsuya
- Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai-shi, Osaka 599-8531, Japan
| | - Takeshi Yoshimura
- Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai-shi, Osaka 599-8531, Japan
| | - Norifumi Fujimura
- Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai-shi, Osaka 599-8531, Japan
| | - Daisuke Kiriya
- Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai-shi, Osaka 599-8531, Japan
- Department of Basic Science, Graduate School of Arts and Sciences, The University of Tokyo, Tokyo 153-8902, Japan
| |
Collapse
|
14
|
Time-Dependent Sensitivity Tunable pH Sensors Based on the Organic-Inorganic Hybrid Electric-Double-Layer Transistor. Int J Mol Sci 2022; 23:ijms231810842. [PMID: 36142756 PMCID: PMC9503050 DOI: 10.3390/ijms231810842] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Revised: 09/08/2022] [Accepted: 09/15/2022] [Indexed: 11/17/2022] Open
Abstract
In this study, we propose tunable pH sensors based on the electric-double-layer transistor (EDLT) with time-dependent sensitivity characteristics. The EDLT is able to modulate the drain current by using the mobile ions inside the electrolytic gate dielectric. This property allows the implementation of a device with sensitivity characteristics that are simply adjusted according to the measurement time. An extended gate-type, ion-sensitive, field-effect transistor consisting of a chitosan/Ta2O5 hybrid dielectric EDLT transducer, and an SnO2 sensing membrane, were fabricated to evaluate the sensing behavior at different buffer pH levels. As a result, we were able to achieve tunable sensitivity by only adjusting the measurement time by using a single EDLT and without additional gate electrodes. In addition, to demonstrate the unique sensing behavior of the time-dependent tunable pH sensors based on organic−inorganic hybrid EDLT, comparative sensors consisting of a normal FET with a SiO2 gate dielectric were prepared. It was found that the proposed pH sensors exhibit repeatable and stable sensing operations with drain current deviations <1%. Therefore, pH sensors using a chitosan electrolytic EDLT are suitable for biosensor platforms, possessing tunable sensitivity and high-reliability characteristics.
Collapse
|
15
|
Iron oxide nanoparticles/PEDOT: PSS nanocomposite-based modification of both glassy carbon electrode and flexible cotton fiber OECT for highly sensitive multi-analytes detection. APPLIED NANOSCIENCE 2022. [DOI: 10.1007/s13204-022-02565-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
|
16
|
Cheng C, Rashed MZ, Fridman GY. Ionic transistor using ion exchange membranes. LAB ON A CHIP 2022; 22:2707-2713. [PMID: 35748422 PMCID: PMC9472566 DOI: 10.1039/d2lc00312k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ionic transistors can be used to modulate ionic current in a way that is analogous to their electronic counterparts. An ionic transistor can reversibly change its ionic conduction to control ionic current by injecting electrical charges. To facilitate its applications in biomedical devices (e.g., controlled drug delivery, rectification of ionic current, and signal processing), an ionic transistor should maintain high performance of ionic current control within physiological solutions (e.g., 0.9% NaCl) for long durations. Here, we introduce an ionic transistor using cation and anion exchange membranes (CEM and AEM). It could impose a 10× impedance change in a channel filled with 0.9% NaCl solution and we observed a stable modulation of ionic current throughout a test of 1000 cycles of on/off switching of the ionic transistor.
Collapse
Affiliation(s)
- Chaojun Cheng
- Mechanical Engineering, Johns Hopkins University, USA
| | - Mohamed Z Rashed
- Otolaryngology HNS, Johns Hopkins University, Ross 830, 720 Rutland Ave, Baltimore, MD 21205, USA.
| | - Gene Y Fridman
- Otolaryngology HNS, Johns Hopkins University, Ross 830, 720 Rutland Ave, Baltimore, MD 21205, USA.
- Biomedical Engineering, Johns Hopkins University, USA
- Computer and Electrical Engineering, Johns Hopkins University, USA
| |
Collapse
|
17
|
Houngkamhang N, Phasukkit P. Portable Deep Learning-Driven Ion-Sensitive Field-Effect Transistor Scheme for Measurement of Carbaryl Pesticide. SENSORS 2022; 22:s22093543. [PMID: 35591232 PMCID: PMC9101106 DOI: 10.3390/s22093543] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/07/2022] [Revised: 05/03/2022] [Accepted: 05/04/2022] [Indexed: 01/27/2023]
Abstract
This research proposes a multiple-input deep learning-driven ion-sensitive field-effect transistor (ISFET) scheme to predict the concentrations of carbaryl pesticide. In the study, the carbaryl concentrations are varied between 1 × 10−7–1 × 10−3 M, and the temperatures of solutions between 20–35 °C. To validate the multiple-input deep learning regression model, the proposed ISFET scheme is deployed onsite (a field test) to measure pesticide concentrations in the carbaryl-spiked vegetable extract. The advantage of this research lies in the use of a deep learning algorithm with an ISFET sensor to effectively predict the pesticide concentrations, in addition to improving the prediction accuracy. The results demonstrate the very high predictive ability of the proposed ISFET scheme, given an MSE, MAE, and R2 of 0.007%, 0.016%, and 0.992, respectively. The proposed multiple-input deep learning regression model with signal compensation is applicable to a wide range of solution temperatures which is convenient for onsite measurement. Essentially, the proposed multiple-input deep learning regression model could be adopted as an effective alternative to the conventional statistics-based regression to predict pesticide concentrations.
Collapse
Affiliation(s)
- Nongluck Houngkamhang
- College of Materials Innovation and Technology, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand;
| | - Pattarapong Phasukkit
- School of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand
- Correspondence:
| |
Collapse
|
18
|
Manimekala T, Sivasubramanian R, Dharmalingam G. Nanomaterial-Based Biosensors using Field-Effect Transistors: A Review. JOURNAL OF ELECTRONIC MATERIALS 2022; 51:1950-1973. [PMID: 35250154 PMCID: PMC8881998 DOI: 10.1007/s11664-022-09492-z] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2021] [Accepted: 02/01/2022] [Indexed: 05/05/2023]
Abstract
Field-effect transistor biosensors (Bio-FET) have attracted great interest in recent years owing to their distinctive properties like high sensitivity, good selectivity, and easy integration into portable and wearable electronic devices. Bio-FET performance mainly relies on the constituent components such as the bio-recognition layer and the transducer, which ensures device stability, sensitivity, and lifetime. Nanomaterial-based Bio-FETs are excellent candidates for biosensing applications. This review discusses the basic concepts, function, and working principles of Bio-FETs, and focuses on the progress of recent research in Bio-FETs in the sensing of neurotransmitters, glucose, nucleic acids, proteins, viruses, and cancer biomarkers using nanomaterials. Finally, challenges in the development of Bio-FETs, as well as an outlook on the prospects of nano Bio-FET-based sensing in various fields, are discussed.
Collapse
Affiliation(s)
- T. Manimekala
- Plasmonic Nanomaterials Laboratory, PSG Institute of Advanced Studies, Peelamedu, Coimbatore, Tamilnadu 641004 India
- Electrochemical Sensors and Energy Materials Laboratory, PSG Institute of Advanced Studies, Peelamedu, Coimbatore, Tamilnadu 641004 India
| | - R. Sivasubramanian
- Electrochemical Sensors and Energy Materials Laboratory, PSG Institute of Advanced Studies, Peelamedu, Coimbatore, Tamilnadu 641004 India
| | - Gnanaprakash Dharmalingam
- Plasmonic Nanomaterials Laboratory, PSG Institute of Advanced Studies, Peelamedu, Coimbatore, Tamilnadu 641004 India
| |
Collapse
|
19
|
Sharova AS, Caironi M. Sweet Electronics: Honey-Gated Complementary Organic Transistors and Circuits Operating in Air. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2103183. [PMID: 34418204 DOI: 10.1002/adma.202103183] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2021] [Revised: 06/20/2021] [Indexed: 06/13/2023]
Abstract
Sustainable harnessing of natural resources is key moving toward a new-generation electronics, which features a unique combination of electronic functionality, low cost, and absence of environmental and health hazards. Within this framework, edible electronics, of which transistors and circuits are a fundamental component, is an emerging field, exploiting edible materials that can be safely ingested, and subsequently digested after performing their function. Dielectrics are a critical functional element of transistors, often constituting their major volume. Yet, to date, there are only scarce examples of electrolytic food-based materials able to provide low-voltage operation of transistors at ambient conditions. In this context, a cost-effective and edible substance, honey, is proposed to be used as an electrolytic gate viscous dielectric in electrolyte-gated organic field-effect transistors (OFETs). Both n- and p-type honey-gated OFETs (HGOFETs) are demonstrated, with distinctive features such as low voltage (<1 V) operation, long-term shelf life and operation stability in air, and compatibility with large-area fabrication processes, such as inkjet printing on edible tattoo-paper. Such complementary devices enable robust honey-based integrated logic circuits, here exemplified by inverting logic gates and ring oscillators. A marked device responsivity to humidity provides promising opportunities for sensing applications, specifically, for moisture control of dried or dehydrated food.
Collapse
Affiliation(s)
- Alina S Sharova
- Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia, Via G. Pascoli, 70/3, Milano, 20133, Italy
- Department of Physics, Politecnico di Milano, Piazza Leonardo da Vinci, 32, Milano, 20133, Italy
| | - Mario Caironi
- Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia, Via G. Pascoli, 70/3, Milano, 20133, Italy
| |
Collapse
|
20
|
Mishra S, Chaturvedi N. Simulation and machine learning modelling based comparative study of InAlGaN and AlGaN high electron mobility transistors for the detection of HER-2. ANALYTICAL METHODS : ADVANCING METHODS AND APPLICATIONS 2021; 13:3659-3666. [PMID: 34323894 DOI: 10.1039/d1ay00707f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The detection of the cancer biomarker human epidermal growth factor receptor 2 (HER-2) has always been challenging at the early stages of cancer due to its very small presence. A systematic study of biosensors to achieve optimum sensitivity is of paramount significance. Thus, in this paper, we report a simulation study and machine learning (ML) based model for the comparative analysis of indium aluminum gallium nitride (InAlGaN) and aluminum gallium nitride (AlGaN) based high electron mobility transistors (HEMTs) for the detection of HER-2. The sensing performance of the InAlGaN based HEMT exhibits 1.8 times higher sensitivity as compared to that of the AlGaN based HEMT. The presented work also provides insights into the importance of the pH of the medium of HER-2. The results produced by the developed ML-based model are in good agreement with the simulation results. The model is not only capable of predicting within the trained range but also it can predict reasonably well even beyond the range of the training data. The introduction of a ML-based model significantly reduces the computational cost, time to perform similar type of simulations and, unlike the physics-based modelling, it also eliminates the need for empirical fitting of the model parameters.
Collapse
Affiliation(s)
- Shivanshu Mishra
- CSIR-Central Electronics Engineering Research Institute, Pilani, Rajasthan, India.
| | | |
Collapse
|
21
|
Sakata T, Nishitani S, Saito A, Fukasawa Y. Solution-Gated Ultrathin Channel Indium Tin Oxide-Based Field-Effect Transistor Fabricated by a One-Step Procedure that Enables High-Performance Ion Sensing and Biosensing. ACS APPLIED MATERIALS & INTERFACES 2021; 13:38569-38578. [PMID: 34351737 DOI: 10.1021/acsami.1c05830] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In this paper, we propose a one-step procedure for fabricating a solution-gated ultrathin channel indium tin oxide (ITO)-based field-effect transistor (FET) biosensor, thus providing an ″all-by-ITO″ technology. A thin-film sheet was placed on both ends of a metal shadow mask, which were contacted with a glass substrate. That is, the bottom of the metal shadow mask corresponding to the channel was slightly raised from the substrate, resulting in the creeping of some particles into the gap during sputtering. Owing to this modified metal shadow mask, a thin ITO channel (<30-40 nm) and thick ITO source/drain electrodes (ca. 100 nm) were simultaneously fabricated during the one-step sputtering. The thickness of ITO films was critical for them to be semiconductive, depending on the maximum depletion width (∼30-40 nm for the ITO channel), similarly to 2D materials. The ultrathin ITO channel worked as an ion-sensitive membrane as well owing to the intrinsic oxidated surface directly contacting with an electrolyte solution. The solution-gated 20-nm-thick channel ITO-based FET, with a steep subthreshold slope (SS) of 55 mV/dec (pH 7.41) attributable to the electric double-layer capacitance at the electrolyte solution/channel interface and the absence of interfacial traps among electrodes formed in one step, demonstrated an ideal pH responsivity (∼56 mV/pH), resulting in the real-time monitoring of cellular respiration and the long-term stability of electrical properties for 1 month. Moreover, the chemical modification of the ITO channel surface is expected to contribute to biomolecular recognition with ultrahigh sensitivity owing to the remarkably steep SS, which provided the exponential pH sensitivity in the subthreshold regime. Our new device produced in this one-step manner has a great future potential in bioelectronics.
Collapse
Affiliation(s)
- Toshiya Sakata
- Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Shoichi Nishitani
- Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Akiko Saito
- Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Yuta Fukasawa
- Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| |
Collapse
|
22
|
Adam T, Dhahi TS, Gopinath SCB, Hashim U, Uda MNA. Recent advances in techniques for fabrication and characterization of nanogap biosensors: A review. Biotechnol Appl Biochem 2021; 69:1395-1417. [PMID: 34143905 DOI: 10.1002/bab.2212] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/01/2021] [Accepted: 05/27/2021] [Indexed: 12/12/2022]
Abstract
Nanogap biosensors have fascinated researchers due to their excellent electrical properties. Nanogap biosensors comprise three arrays of electrodes that form nanometer-size gaps. The sensing gaps have become the major building blocks of several sensing applications, including bio- and chemosensors. One of the advantages of nanogap biosensors is that they can be fabricated in nanoscale size for various downstream applications. Several studies have been conducted on nanogap biosensors, and nanogap biosensors exhibit potential material properties. The possibilities of combining these unique properties with a nanoscale-gapped device and electrical detection systems allow excellent and potential prospects in biomolecular detection. However, their fabrication is challenging as the gap is becoming smaller. It includes high-cost, low-yield, and surface phenomena to move a step closer to the routine fabrications. This review summarizes different feasible techniques in the fabrication of nanogap electrodes, such as preparation by self-assembly with both conventional and nonconventional approaches. This review also presents a comprehensive analysis of the fabrication, potential applications, history, and the current status of nanogap biosensors with a special focus on nanogap-mediated bio- and chemical sonsors.
Collapse
Affiliation(s)
- Tijjani Adam
- Faculty of Electronic Engineering Technology, Universiti Malaysia Perlis, Kampus Uniciti Alam Sg. Chuchuh, Padang Besar (U), Perlis, Malaysia.,Institute of Nano Electronic Engineering, Universiti Malaysia Perlis (UniMAP), Kangar, Perlis, 01000, Malaysia
| | - Th S Dhahi
- Physics Department, University of Basrah, Basra, Iraq.,Institute of Nano Electronic Engineering, Universiti Malaysia Perlis (UniMAP), Kangar, Perlis, 01000, Malaysia
| | - Subash C B Gopinath
- Faculty of Chemical Engineering Technology, Universiti Malaysia Perlis (UniMAP), Arau, Perlis, 02600, Malaysia.,Institute of Nano Electronic Engineering, Universiti Malaysia Perlis (UniMAP), Kangar, Perlis, 01000, Malaysia
| | - U Hashim
- Institute of Nano Electronic Engineering, Universiti Malaysia Perlis (UniMAP), Kangar, Perlis, 01000, Malaysia
| | - M N A Uda
- Faculty of Chemical Engineering Technology, Universiti Malaysia Perlis (UniMAP), Arau, Perlis, 02600, Malaysia.,Institute of Nano Electronic Engineering, Universiti Malaysia Perlis (UniMAP), Kangar, Perlis, 01000, Malaysia
| |
Collapse
|
23
|
Printable graphene BioFETs for DNA quantification in Lab-on-PCB microsystems. Sci Rep 2021; 11:9815. [PMID: 33972649 PMCID: PMC8111018 DOI: 10.1038/s41598-021-89367-1] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/03/2020] [Accepted: 04/26/2021] [Indexed: 01/09/2023] Open
Abstract
Lab-on-Chip is a technology that aims to transform the Point-of-Care (PoC) diagnostics field; nonetheless a commercial production compatible technology is yet to be established. Lab-on-Printed Circuit Board (Lab-on-PCB) is currently considered as a promising candidate technology for cost-aware but simultaneously high specification applications, requiring multi-component microsystem implementations, due to its inherent compatibility with electronics and the long-standing industrial manufacturing basis. In this work, we demonstrate the first electrolyte gated field-effect transistor (FET) DNA biosensor implemented on commercially fabricated PCB in a planar layout. Graphene ink was drop-casted to form the transistor channel and PNA probes were immobilized on the graphene channel, enabling label-free DNA detection. It is shown that the sensor can selectively detect the complementary DNA sequence, following a fully inkjet-printing compatible manufacturing process. The results demonstrate the potential for the effortless integration of FET sensors into Lab-on-PCB diagnostic platforms, paving the way for even higher sensitivity quantification than the current Lab-on-PCB state-of-the-art of passive electrode electrochemical sensing. The substitution of such biosensors with our presented FET structures, promises further reduction of the time-to-result in microsystems combining sequential DNA amplification and detection modules to few minutes, since much fewer amplification cycles are required even for low-abundance nucleic acid targets.
Collapse
|
24
|
Han S, Yamamoto S, Polyravas AG, Malliaras GG. Microfabricated Ion-Selective Transistors with Fast and Super-Nernstian Response. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2004790. [PMID: 33118196 DOI: 10.1002/adma.202004790] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2020] [Revised: 08/26/2020] [Indexed: 06/11/2023]
Abstract
Transistor-based ion sensors have evolved significantly, but the best-performing ones rely on a liquid electrolyte as an internal ion reservoir between the ion-selective membrane and the channel. This liquid reservoir makes sensor miniaturization difficult and leads to devices that are bulky and have limited mechanical flexibility, which is holding back the development of high-performance wearable/implantable ion sensors. This work demonstrates microfabricated ion-selective organic electrochemical transistors (OECTs) with a transconductance of 4 mS, in which a thin polyelectrolyte film with mobile sodium ions replaces the liquid reservoir. These devices are capable of selective detection of various ions with a fast response time (≈1 s), a super-Nernstian sensitivity (85 mV dec-1 ), and a high current sensitivity (224 µA dec-1 ), comparing favorably to other ion sensors based on traditional and emerging materials. Furthermore, the ion-selective OECTs are stable with highly reproducible sensitivity even after 5 months. These characteristics pave the way for new applications in implantable and wearable electronics.
Collapse
Affiliation(s)
- Sanggil Han
- Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Ave, Cambridge, CB3 0FA, UK
| | - Shunsuke Yamamoto
- Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Ave, Cambridge, CB3 0FA, UK
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 2-1-1 Katahira, Sendai, 9808577, Japan
- Department of Biomolecular Engineering, Graduate School of Engineering, Tohoku University, 6-6 Aramaki, Aoba, Sendai, 9808579, Japan
| | - Anastasios G Polyravas
- Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Ave, Cambridge, CB3 0FA, UK
| | - George G Malliaras
- Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Ave, Cambridge, CB3 0FA, UK
| |
Collapse
|
25
|
Tarabanko N, Tarabanko VE, Taran OP. Unidimensional Approximation of the Diffuse Electrical Layer in the Inner Volume of Solid Electrolyte Grains in the Absence of Background Ions. Chemphyschem 2020; 21:1925-1933. [PMID: 32644277 DOI: 10.1002/cphc.202000455] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/31/2020] [Revised: 07/08/2020] [Indexed: 11/08/2022]
Abstract
In this paper we continue working on our theory of electrical double layers resulting exclusively from dissociation of a solid electrolyte, which we previously proposed as a medium for catalytic interaction between solid cellulose and solid acid catalysts of hydrolysis. Two theoretical unidimensional models of the inner grain volume are considered: an infinitely long cylindrical pore, and a gel electrolyte near a grain outer surface. Despite the model simplicity, the predictions for the cylindrical pore case are in semi-quantitative agreement with literature data on electroosmotic experiments, adequately explaining high proton selectivity of sulfonic membranes, and decline of such selectivity at high background acid concentration. The gel model predicts less concentrated diffuse layer in comparison to electrolytes with impenetrable skeleton (e. g., sulfonated carbons). This suggests limited suitability of gel electrolytes as catalysts if a substrate cannot diffuse into the gel bulk and the reaction is thereby spatially limited to the near-surface region, for example if a substrate is solid like aforementioned cellulose.
Collapse
Affiliation(s)
- Nikolay Tarabanko
- Institute of Chemistry and Chemical Technology SB RAS, Federal Research Center "Krasnoyarsk Science Center SB RAS", Akademgorodok 50/24, Krasnoyarsk, 660036, Russia
| | - Valery E Tarabanko
- Institute of Chemistry and Chemical Technology SB RAS, Federal Research Center "Krasnoyarsk Science Center SB RAS", Akademgorodok 50/24, Krasnoyarsk, 660036, Russia
| | - Oxana P Taran
- Institute of Chemistry and Chemical Technology SB RAS, Federal Research Center "Krasnoyarsk Science Center SB RAS", Akademgorodok 50/24, Krasnoyarsk, 660036, Russia.,Boreskov Institute of Catalysis SB RAS, Lavrentiev Av. 5, Novosibirsk, 630090, Russia
| |
Collapse
|