Low-Temperature Annealing of CdZnTeSe under Bias

Bridgman-Grown (Cd,Mn)Te and (Cd,Mn)(Te,Se): A Comparison of Suitability for X and Gamma Detectors

This study explores the suitability of (Cd,Mn)Te and (Cd,Mn)(Te,Se) as room-temperature X-ray and gamma-ray detector materials, grown using the Bridgman method. The investigation compares their crystal structure, mechanical and optical properties, and radiation detection capabilities. Both crystals can yield large-area single crystal samples measuring approximately 30 × 30 mm2. In low-temperature photoluminescence analysis, both materials showed defect states, and annealing in cadmium vapors effectively eliminated donor-acceptor pair luminescence in (Cd,Mn)Te but not in (Cd,Mn)(Te,Se). Moreover, harder (Cd,Mn)(Te,Se) exhibited a higher etch pit density compared to softer (Cd,Mn)Te. X-ray diffraction examination revealed uniform lattice constant distribution in both compounds, with variations at a part per million level. (Cd,Mn)Te crystals demonstrated excellent single crystal properties with narrower omega scan widths, while (Cd,Mn)(Te,Se) exhibited a high contribution of block-like structures with significantly larger misorientation angles. Spectroscopic evaluations revealed better performance of a pixelated (Cd,Mn)Te detector, in comparison to (Cd,Mn)(Te,Se), achieving a mean full width at half maximum of 14% for the 122 keV gamma peak of Co-57. The reduced performance of the (Cd,Mn)(Te,Se) detector may be attributed to deep trap-related luminescence or block-like structures with larger misorientation angles. In conclusion, Bridgman-grown (Cd,Mn)Te emerges as a more promising material for X-ray and gamma-ray detectors when compared to (Cd,Mn)(Te,Se).

Investigation of internal electric fields in graphene/6H-SiC under illumination by the Pockels effect

In this paper, we introduce a method for mapping profiles of internal electric fields in birefringent crystals based on the electro-optic Pockels effect and measuring phase differences of low-intensity polarized light. In the case of the studied 6H-SiC crystal with graphene electrodes, the experiment is significantly affected by birefringence at zero bias voltage applied to the crystal and a strong thermo-optical effect. We dealt with these phenomena by adding a Soleil-Babinet compensator and using considerations based on measurements of crystal heating under laser illumination. The method can be generalized and adapted to any Pockels crystal that can withstand sufficiently high voltages. We demonstrate the significant formation of space charge in semi-insulating 6H-SiC under illumination by above-bandgap light.

Optical Writing and Electro-Optic Imaging of Reversible Space Charges in Semi-Insulating CdTe Diodes

Deep levels control the space charge in electrically compensated semi-insulating materials. They limit the performance of radiation detectors but their interaction with free carriers can be favorably exploited in these devices to manipulate the spatial distribution of the electric field by optical beams. By using semi-insulating CdTe diodes as a case study, our results show that optical doping functionalities are achieved. As such, a highly stable, flux-dependent, reversible and spatially localized space charge is induced by a line-shaped optical beam focused on the cathode contact area. Real-time non-invasive imaging of the electric field is obtained through the Pockels effect. A simple and convenient method to retrieve the two-dimensional electric field components is presented. Numerical simulations involving just one deep level responsible for the electrical compensation confirm the experimental findings and help to identify the underlying mechanism and critical parameters enabling the optical writing functionalities.