High-Performance Mg3Sb2-x Bi x Thermoelectrics: Progress and Perspective

High-performance Mg3Sb2-based thermoelectrics with reduced structural disorder and microstructure evolution

Mg3Sb2-based thermoelectrics show great promise for next-generation thermoelectric power generators and coolers owing to their excellent figure of merit (zT) and earth-abundant composition elements. However, the complexity of the defect microstructure hinders the advancement of high performance. Here, the defect microstructure is modified via In doping and prolonged sintering time to realize the reduced structural disorder and microstructural evolution, synergistically optimizing electron and phonon transport via a delocalization effect. As a result, an excellent carrier mobility of ~174 cm2 V-1 s-1 and an ultralowκ l a t of ~0.42 W m-1 K-1 are realized in this system, leading to an ultrahigh zT of ~2.0 at 723 K. The corresponding single-leg module demonstrates a high conversion efficiency of ~12.6% with a 425 K temperature difference, and the two-pair module of Mg3Sb2/MgAgSb displays ~7.1% conversion efficiency with a 276 K temperature difference. This work paves a pathway to improve the thermoelectric performance of Mg3Sb2-based materials, and represents a significant step forward for the practical application of Mg3Sb2-based devices.

Low-Cost Magnesium-Based Thermoelectric Materials: Progress, Challenges, and Enhancements

Magnesium-based thermoelectric (TE) materials have attracted considerable interest due to their high ZT values, coupled with their low cost, widespread availability, nontoxicity, and low density. In this review, we provide a succinct overview of the advances and strategies pertaining to the development of Mg-based materials aimed at enhancing their performance. Following this, we delve into the major challenges posed by the severe working conditions, such as high temperature and thermal cycling, which adversely impact the behavior and long-term stability of the TE modules. Challenges include issues like the lack of mechanical strength, chemical instability, and unreliable contact. Subsequently, we focus on the key methodologies aimed at addressing these challenges to facilitate the broader application of the TE modules. These include boosting the mechanical strength, especially the toughness, through grain refining and additions of second phases. Furthermore, strategies targeted at enhancing the chemical stability through coatings and modifying the microstructure, as well as improving the contact design and materials, are discussed. In the end, we highlight the perspectives for boosting the practical applications of Mg-based TE materials in the future.

High performance magnesium-based plastic semiconductors for flexible thermoelectrics

Low-cost thermoelectric materials with simultaneous high performance and superior plasticity at room temperature are urgently demanded due to the lack of ever-lasting power supply for flexible electronics. However, the inherent brittleness in conventional thermoelectric semiconductors and the inferior thermoelectric performance in plastic organics/inorganics severely limit such applications. Here, we report low-cost inorganic polycrystalline Mg3Sb0.5Bi1.498Te0.002, which demonstrates a remarkable combination of large strain (~ 43%) and high figure of merit zT (~ 0.72) at room temperature, surpassing both brittle Bi2(Te,Se)3 (strain ≤ 5%) and plastic Ag2(Te,Se,S) and organics (zT ≤ 0.4). By revealing the inherent high plasticity in Mg3Sb2 and Mg3Bi2, capable of sustaining over 30% compressive strain in polycrystalline form, and the remarkable deformability of single-crystalline Mg3Bi2 under bending, cutting, and twisting, we optimize the Bi contents in Mg3Sb2-xBix (x = 0 to 1) to simultaneously boost its room-temperature thermoelectric performance and plasticity. The exceptional plasticity of Mg3Sb2-xBix is further revealed to be brought by the presence of a dense dislocation network and the persistent Mg-Sb/Bi bonds during slipping. Leveraging its high plasticity and strength, polycrystalline Mg3Sb2-xBix can be easily processed into micro-scale dimensions. As a result, we successfully fabricate both in-plane and out-of-plane flexible Mg3Sb2-xBix thermoelectric modules, demonstrating promising power density. The inherent remarkable plasticity and high thermoelectric performance of Mg3Sb2-xBix hold the potential for significant advancements in flexible electronics and also inspire further exploration of plastic inorganic semiconductors.

Synergistically Optimized Thermoelectric and Mechanical Properties of Mg3.2Bi1.5Sb0.5-SiC Composites

Motivated by the surging demand for low-temperature waste heat harvesting, materials with both prominent thermoelectric and good mechanical properties are preferred in practical applications. In this present work, the composite exploration of Te-doped Mg3.2Bi1.5Sb0.5-x vol % nanosized SiC (x = 0, 0.05, 0.1, 0.2, and 0.5) was carried out, where nanosized SiC is physically dispersed in the matrix in the form of a second phase. SiC second phase compositing further optimized the matrix carrier concentration, resulting in a higher power factor in the service temperature range (the highest value from 28.9 to 31.7 μW cm-1 K-2), and the (ZT)ave from 0.91 to 0.96 compared with the matrix sample. In addition, the SiC second phase effectively enhanced the mechanical properties of composite materials, including flexural strength, microhardness, and modulus. Because of the simultaneous optimization of thermoelectric and mechanical properties, the overall performance of Te-doped Mg3.2Bi1.5Sb0.5-0.05 vol % SiC composite is leveraged to meet special requirements of power generation. It is expected that the addition of SiC should be broadly applicable to address the physical performance in other thermoelectric systems.

Developing a Multiband Electronic Band Structure Model and Predictive Maps for Bismuth-Rich Mg3(Sb1-xBix)2 Thermoelectric Materials

In recent years, bismuth-rich Mg3(Sb1-xBix)2 (x = 0.5-0.8) compositions have generated significant interest due to their excellent thermoelectric (TE) performance near room temperature, making them potential applicants for recovery of low-grade waste heat. The superior performance in these materials is due to its complex electronic band structure (EBS) with presence of multiple near degenerate bands close to the conduction band edge. The position and curvature of these bands strongly depend on the alloy composition, doping amount as well as temperature. Thus, identifying optimal material compositions to get the best TE performance depends on an understanding of the temperature dynamics of EBS and forms the objective of this work. Mg3Sb0.6Bi1.4 (x = 0.7) is chosen for this study due to its reported high near room temperature performance, and compositions with varying doping concentrations (Te used as dopant) have been synthesized. EBS parameters like effective mass and deformation potential of bands, interband separation and band gap values have been estimated using a recently developed refinement approach. Refinement results indicate that the interband separation between conduction bands to be a function of both temperature and doping concentration. Further, thermal conductivity (κ) was estimated for all of the compositions. Utilizing the EBS and κ information, predictive 3D maps indicating the variation in zT (TE figure of merit) with doping concentration and temperature have been generated. The 3D maps reveal an interesting surface topography with a broad peak zT region. This observation explains why these materials have high TE performance and are less sensitive to doping inhomogeneities. Our results provide detailed EBS information and fundamental insights on the TE properties of Mg3Sb0.6Bi1.4. Further, the proposed technique can be utilized to probe other Mg3(Sb1-xBix)2 compositions and TE materials.

Simultaneously Boosting Thermoelectric and Mechanical Properties of n-Type Mg3Sb1.5Bi0.5-Based Zintls through Energy-Band and Defect Engineering

Incorporating donor doping into Mg3Sb1.5Bi0.5 to achieve n-type conductivity is one of the crucial strategies for performance enhancement. In pursuit of higher thermoelectric performance, we herein report co-doping with Te and Y to optimize the thermoelectric properties of Mg3Sb1.5Bi0.5, achieving a peak ZT exceeding 1.7 at 703 K in Y0.01Mg3.19Sb1.5Bi0.47Te0.03. Guided by first-principles calculations for compositional design, we find that Te-doping shifts the Fermi level into the conduction band, resulting in n-type semiconductor behavior, while Y-doping further shifts the Fermi level into the conduction band and reduces the bandgap, leading to enhanced thermoelectric performance with a power factor as high as >20 μW cm-1 K-2. Additionally, through detailed micro/nanostructure characterizations, we discover that Te and Y co-doping induces dense crystal and lattice defects, including local lattice distortions and strains caused by point defects, and densely distributed grain boundaries between nanocrystalline domains. These defects efficiently scatter phonons of various wavelengths, resulting in a low thermal conductivity of 0.83 W m-1 K-1 and ultimately achieving a high ZT. Furthermore, the dense lattice defects induced by co-doping can further strengthen the mechanical performance, which is crucial for its service in devices. This work provides guidance for the composition and structure design of thermoelectric materials.

Revealing the Chemical Instability of Mg3Sb2-xBix-Based Thermoelectric Materials

n-Type Mg3Sb2-xBix alloys have been regarded as promising thermoelectric materials due to their excellent performance and low cost. For practical applications, the thermoelectric performance is not the only factor that should be taken into consideration. In addition, the chemical and thermal stabilities of the thermoelectric material are of equal importance for the module design. Previous studies reported that the Mg3Sb2-xBix alloys were unstable in an ambient environment. In this work, we found that Mg3Sb2-xBix alloys reacted with H2O and O2 at room temperature and formed amorphous Mg(OH)2/MgO and crystalline Bi/Sb. The substantial loss of Mg resulted in a significant deterioration in thermoelectric properties, accompanied by the transition from n-type to p-type. With the increase in Bi content, the chemical stability decreased due to the higher formation energy of Mg3Bi2. A chemically stable Mg3Bi2 sample was achieved by coating it with polydimethylsiloxane to isolate H2O and O2 in the air.

Strained Lamellar Structures Leading to Improved Thermoelectric Performance in Mg3Sb1.5Bi0.5

Mg3Sb2-xBix solid-solutions represent an important class of thermoelectric (TE) materials due to their high efficiency and variable operating temperature range. Of particular significance for midtemperature applications is the Mg3Sb1.5Bi0.5 composition whose superior thermoelectric (TE) performance is attributed to the complex conduction band edge in conjunction with alloy dominated phonon scattering. In this work, we show that microstructure also plays a significant role in lowering the lattice thermal conductivity which in turn affects the overall TE performance (change in peak zT values between 1.1 and 1.4 have been observed). Temperature dependent TE properties of Mg3+xSb1.5Bi0.5 compositions with varying nominal Mg content (x = 0.2, 0.3, 0.4) have been studied. A marked reduction of the lattice thermal conductivity (κL) is observed in compositions with low nominal Mg content (x = 0.2), which is due to the presence of lamellar structures within the grains. These lamellar regions are isostructural to the matrix with a low misfit angle and represent compositional fluctuations in the Bi to Sb ratio. Both the size (200 nm-500 nm) and the interfacial strain contribute to the enhanced phonon scattering. A quantitative estimate of κL reduction due to these structures have been carried out using a mean free path (MFP) spectrum analysis which reveal a good match with experiments at room temperature. Further, the electrical properties are not influenced by these lamellar structures as observed from the similar power-factor (S2σ) and weighted mobilities in all of the compositions. This is due to their similar orientation to the adjacent matrix region. Thus, the zT parameter in the various compositions with similar carrier concentration can be significantly altered (∼25%) by adjusting the nominal Mg content. The results demonstrate that preferential phonon scattering by microstructure modification can be a new route for property improvement in Mg3+xSb2-yBiy solid-solutions.

Enhanced Thermoelectric Performance of p-Type Mg3-xZnxSb2/Sb Composites: The Role of ZnSb/Sb Composites

Mg3Sb2-based Zintl compounds have garnered recent attention as promising materials for thermoelectric applications due to their low thermal conductivity and high zT values as n-type materials. However, the zT values of p-type materials are lower compared to their n-type counterparts. Through a straightforward process involving cold pressing and evacuating-and-encapsulating sintering, we have successfully synthesized a variety of p-type Mg3-xZnxSb2/Sb composites by adding the ZnSb-4%Sb composite into the Mg3Sb2 host material. Structural analyses have provided insights into the role of the ZnSb-4%Sb composite, demonstrating its significance in Zn doping on the Mg sites and Sb acting as an additive in the composite. The introduction of Zn on the Mg tetrahedral sites enhances the concentration of carriers, while the presence of highly conductive Sb grains facilitates the movement of charge carriers between adjacent Mg3-xZnxSb2 grains, thereby promoting mobility. Consequently, the electrical resistivity of the Mg3-xZnxSb2/Sb composites decreases as the Zn content increases. At 710 K, the Mg1.91Zn1.09Sb2/Sb composite exhibits the lowest resistivity, measuring 5.1 mΩ-cm, which is 46 times lower than that of the Mg3Sb2 host. Furthermore, the zT value of the Mg3-xZnxSb2/Sb composites increases with higher Zn content (x), benefiting from a combination of an improved power factor and reduced thermal conductivity. Significantly, our straightforward fabrication process enables us to achieve a maximum zT value of 0.58 at 710 K for the Mg1.91Zn1.09Sb2/Sb composite. This achievement can primarily be attributed to the 8-fold enhancement in power factor compared to the Mg3Sb2 host.

Effect of Composition Adjustment on the Thermoelectric Properties of Mg3Bi2-Based Thermoelectric Materials

Thermoelectric materials are widely used in refrigeration chips, thermal power generation, catalysis and other fields. Mg3Bi2-based thermoelectric material is one of the most promising thermoelectric materials. Herein, the Mg3Bi2-based samples were prepared by high temperature synthesis, and the influence of Mg/Sb content on the electrical transport properties and semi-conductivity/semi-metallicity of the materials has been studied. The results indicate that the efficiency of introducing electrons from excess Mg prepared by high temperature synthesis is lower than that introduced by ball milling, due to the high vapor pressure of Mg. The doping of Sb/Te at the Bi site would make it easier for the material to change from p-type conduction to n-type conduction. With the increase in Mg content, the semi-conductivity of the material becomes weaker, the semi-metallicity becomes stronger, and the corresponding conductivity increases. With the increase in Sb content, the samples exhibit the opposite changes. The highest power factor of ~1.98 mWm-1K-2 is obtained from the Mg3.55Bi1.27Sb0.7Te0.03 sample.

High-efficiency and reliable same-parent thermoelectric modules using Mg3Sb2-based compounds

Thermoelectric modules can convert waste heat directly into useful electricity, providing a clean and sustainable way to use fossil energy more efficiently. Mg₃Sb₂-based alloys have recently attracted considerable interest from the thermoelectric community due to their nontoxic nature, abundance of constituent elements and excellent mechanical and thermoelectric properties. However, robust modules based on Mg₃Sb₂ have progressed less rapidly. Here, we develop multiple-pair thermoelectric modules consisting of both n-type and p-type Mg₃Sb₂-based alloys. Thermoelectric legs based on the same parent fit into each other in terms of thermomechanical properties, facilitating module fabrication and ensuring low thermal stress. By adopting a suitable diffusion barrier layer and developing a new joining technique, an integrated all-Mg₃Sb₂-based module demonstrates a high efficiency of 7.5% at a temperature difference of 380 K, exceeding the state-of-the-art same-parent thermoelectric modules. Moreover, the efficiency remains stable during 150 thermal cycling shocks (∼225 h), demonstrating excellent module reliability.

Thin, soft, 3D printing enabled crosstalk minimized triboelectric nanogenerator arrays for tactile sensing

With the requirements of self-powering sensors in flexible electronics, wearable triboelectric nanogenerators (TENGs) have attracted great attention due to their advantages of excellent electrical outputs and low-cost processing routes. The crosstalk effect between adjacent sensing units in TENGs significantly limits the pixel density of sensor arrays. Here, we present a skin-integrated, flexible TENG sensor array with 100 sensing units in an overall size of 7.5 cm × 7.5 cm that can be processed in a simple, low-cost, and scalable way enabled by 3D printing. All the sensing units show good sensitivity of 0.11 V/kPa with a wide range of pressure detection from 10 to 65 kPa, which allows to accurately distinguish various tactile formats from gentle touching (as low as 2 kPa) to hard pressuring. The 3D printing patterned substrate allows to cast triboelectric layers of polydimethylsiloxane in an independent sensing manner for each unit, which greatly suppresses the cross talk arising from adjacent sensing units, where the maximum crosstalk output is only 10.8%. The excellent uniformity and reproducibility of the sensor array offer precise pressure mapping for complicated pattern loadings, which demonstrates its potential in tactile sensing and human-machine interfaces.

Asymmetrical Transport Distribution Function: Skewness as a Key to Enhance Thermoelectric Performance

How to achieve high thermoelectric figure of merit is still a scientific challenge. By solving the Boltzmann transport equation, thermoelectric properties can be written as integrals of a single function, the transport distribution function (TDF). In this work, the shape effects of transport distribution function in various typical functional forms on thermoelectric properties of materials are systematically investigated. It is found that the asymmetry of TDF, characterized by skewness, can be used to describe universally the trend of thermoelectric properties. By defining symmetric and asymmetric TDF functions, a novel skewness is then constructed for thermoelectric applications. It is demonstrated, by comparison with ab initio calculations and experiments, that the proposed thermoelectric skewness not only perfectly captures the main feature of conventional skewness but also is able to predict the thermoelectric power accurately. This comparison confirms the unique feature of our proposed thermoelectric skewness, as well as its special role of connection between the statistics of TDF and thermoelectric properties of materials. It is also found that the thermoelectric performance can be enhanced by increasing the asymmetry of TDF. Finally, it is also interesting to find that the thermoelectric transport properties based on typical quantum statistics (Fermi-Dirac distributions) can be well described by typical shape parameter (skewness) for classical statistics.

Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance p-Type Mg3Sb2 Zintl Compounds

Environmentally friendly Mg3Sb2-based materials have drawn intensive attention owing to their promising thermoelectric performance. In this work, the electrical properties of p-type Mg3Sb2 are dramatically optimized by the regulation of Mg deficiency. Then, we, for the first time, found that Zn substitution at the Mg2 site leads to the alignment of px,y and pz orbital, resulting in a high band degeneracy and the dramatically enhanced Seebeck coefficient, demonstrated by the DFT calculations and electronic properties measurement. Moreover, Zn alloying decreases Mg1 (Zn) vacancies formation energy and in turn increases Mg (Zn) vacancies and optimizes the carrier concentration. Simultaneously, the Mg/Zn substitutions, Mg vacancies, and porosity structure suppress the phonon transport in a broader frequency range, leading to a low lattice thermal conductivity of ~0.47 W m-1 K-1 at 773 K. Finally, a high ZT of ~0.87 at 773 K was obtained for Mg1.95Na0.01Zn1Sb2, exceeding most of the previously reported p-type Mg3Sb2 compounds. Our results further demonstrate the promising prospects of p-type Mg3Sb2-based material in the field of mid-temperature heat recovery.

Regulating Thermogalvanic Effect and Mechanical Robustness via Redox Ions for Flexible Quasi-Solid-State Thermocells

The design of power supply systems for wearable applications requires both flexibility and durability. Thermoelectrochemical cells (TECs) with large Seebeck coefficient can efficiently convert low-grade heat into electricity, thus having attracted considerable attention in recent years. Utilizing hydrogel electrolyte essentially addresses the electrolyte leakage and complicated packaging issues existing in conventional liquid-based TECs, which well satisfies the need for flexibility. Whereas, the concern of mechanical robustness to ensure stable energy output remains yet to be addressed. Herein, a flexible quasi-solid-state TEC is proposed based on the rational design of a hydrogel electrolyte, of which the thermogalvanic effect and mechanical robustness are simultaneously regulated via the multivalent ions of a redox couple. The introduced redox ions not only endow the hydrogel with excellent heat-to-electricity conversion capability, but also act as ionic crosslinks to afford a dual-crosslinked structure, resulting in reversible bonds for effective energy dissipation. The optimized TEC exhibits a high Seebeck coefficient of 1.43 mV K^-1 and a significantly improved fracture toughness of 3555 J m^-2, thereby can maintain a stable thermoelectrochemical performance against various harsh mechanical stimuli. This study reveals the high potential of the quasi-solid-state TEC as a flexible and durable energy supply system for wearable applications.

Maximizing the performance of n-type Mg3Bi2 based materials for room-temperature power generation and thermoelectric cooling

Although the thermoelectric effect was discovered around 200 years ago, the main application in practice is thermoelectric cooling using the traditional Bi₂Te₃. The related studies of new and efficient room-temperature thermoelectric materials and modules have, however, not come to fruition yet. In this work, the electronic properties of n-type Mg_3.2Bi_1.5Sb_0.5 material are maximized via delicate microstructural design with the aim of eliminating the thermal grain boundary resistance, eventually leading to a high zT above 1 over a broad temperature range from 323 K to 423 K. Importantly, we further demonstrated a great breakthrough in the non-Bi₂Te₃ thermoelectric module, coupled with the high-performance p-type α-MgAgSb, for room-temperature power generation and thermoelectric cooling. A high conversion efficiency of ~2.8% at the temperature difference of 95 K and a maximum temperature difference of 56.5 K are experimentally achieved. If the interfacial contact resistance is further reduced, our non-Bi₂Te₃ module may rival the long-standing champion commercial Bi₂Te₃ system. Overall, this work represents a substantial step towards the real thermoelectric application using non-Bi₂Te₃ materials and devices.

The awaited studies of new and efficient thermoelectric modules have not come to fruition yet. Here, the authors demonstrate a high thermoelectric performance of non-Bi₂Te₃ module for room-temperature power generation and thermoelectric cooling.

A review of advances in tribology in 2020–2021

Around 1,000 peer-reviewed papers were selected from 3,450 articles published during 2020–2021, and reviewed as the representative advances in tribology research worldwide. The survey highlights the development in lubrication, wear and surface engineering, biotribology, high temperature tribology, and computational tribology, providing a show window of the achievements of recent fundamental and application researches in the field of tribology.

Catkin-derived mesoporous carbon-supported molybdenum disulfide and nickelhydroxyloxide hybrid as a bifunctional electrocatalyst for driving overall water splitting

In this work, a two-dimensional heterostructure of molybdenum disulfide (MoS₂) and nickelhydroxyloxide (NiOOH) nanosheets supported on catkin-derived mesoporous carbon (C-MC) was constructed and exploited as an efficient electrocatalyst for overall water splitting. The C-MC nanostructure was prepared by pyrolyzing biomass material of catkin at 600 °C in N₂ atmosphere. The C-MC network exhibited hollow nanotube structure and had a large specific surface area, comprising trace nitrogen and a large amount of oxygen vacancies. It further served as the support for the growth of NiOOH nanosheets (NiOOH@C-MC), which was combined with MoS₂ nanosheets by in situ growth, yielding a multicomponent electrocatalyst (MoS₂@NiOOH@C-MC). By integrating the superior hydrogen evolution reaction (HER) performance of MoS₂, oxygen evolution reaction (OER) performance of NiOOH, and the fast electron transfer capability of C-MC, the prepared MoS₂@NiOOH@C-MC illustrated a low potential of - 250 mV for HER and 1.51 V for OER at the current density of 10 mV cm^-2. Consequently, when applied as the working electrode for driving overall water splitting in a two-electrode system, the bifunctional MoS₂@NiOOH@C-MC electrocatalyst displayed a low cell voltage of 1.62 V at the current density of 10 mA cm^-2. The present work provides a new strategy that uses biomass material for developing bifunctional electrocatalyst for overall water splitting.

Improved Thermoelectric Properties of N-Type Mg3Sb2 through Cation-Site Doping with Gd or Ho

The success of n-type doping has attracted strong research interest for exploring effective n-type dopants for Mg₃Sb₂ thermoelectrics. Herein, we experimentally study Gd and Ho as n-type dopants for Mg₃Sb₂ thermoelectrics. The synthesis, structural characterization, and thermoelectric properties of Gd-doped, Ho-doped, (Gd, Te)-codoped, and (Ho, Te)-codoped Mg₃Sb₂ samples are reported. It is found that Gd and Ho are effective n-type cation-site dopants showing a higher doping efficiency as well as a superior carrier concentration in comparison with anion-site doping with Te, consistent with the previous theoretical prediction. For n-type Mg₃Sb₂ samples doped with Gd or Ho, optimal thermoelectric figure of merit zT values of ∼1.26 and ∼0.94 at 725 K are obtained, respectively, in Mg_3.5Gd_0.04Sb₂ and Mg_3.5Ho_0.04Sb₂, which are superior to many reported Te-doped Mg₃Sb₂ without alloying with Mg₃Bi₂. By codoping with Gd (or Ho) and Te, reduced thermal conductivity and enhanced power factor values are achieved at high temperatures, which results in enhanced peak zT values well above unity at 725 K. This work reveals Gd and Ho as effective n-type dopants for Mg₃Sb₂ thermoelectric materials.